Correlation induced switching of the local spatial charge distribution in a two-level system

It was found that tunneling current through a nanometer scale structure with strongly coupled localized states causes spatial redistribution of localized charges induced by Coulomb correlations. We present here theoretical investigation of this effect by means of Heisenberg equations for localized states electron filling numbers. This method makes it possible to take into account pair correlations of local electron density exactly. It is shown that inverse occupation of the two-level system caused by Coulomb correlations appears in particular range of applied bias. Described effects can give a possibility of charge manipulation in the proposed system. We also expect that described results can be observed in tunneling structures with impurities or with small quantum dots.     

Coulomb effects in artificial molecules

We study the capacitance spectra of artificial molecules consisting of two and three coupled quantum dots from an extended Hubbard Hamiltonian model that takes into account quantum confinement, intra- and inter-dot Coulomb interaction and tunneling coupling between all single particle states in nearest neighbor dots. We find that, for weak coupling, the interdot Coulomb interaction dominates the formation of a collective molecular state. We also calculate the effects of correlations on the tunneling probability through the evaluation of the spectral weights, and corroborate the importance of selection rules for understanding experimental conductance spectra.     

Charge and spin configurations in the coupled quantum dots with Coulomb correlations induced by tunneling current

We investigated the peculiarities of non-equilibrium charge states and spin configurations in the system of two strongly coupled quantum dots (QDs) weakly connected to the electrodes in the presence of Coulomb correlations. We analyzed the modification of non-equilibrium charge states and different spin configurations of the system in a wide range of applied bias voltage and revealed well pronounced ranges of system parameters where negative tunneling conductivity appears due to the Coulomb correlations.     

电子关联效应对平行双量子点系统磁输运性质的影响

从理论上研究了平行双量子点系统中的电子关联效应对该系统磁输运性质的影响. 基于广义主方程方法, 计算了通过此系统的电流、微分电导和隧穿磁阻. 计算结果表明: 电子自旋关联效应可以促发一个很大的隧穿磁阻, 而电子库仑关联效应不仅可以压制电子自旋关联效应, 还可以导致负隧穿磁阻和负微分电导的出现. 对相关的基本物理问题进行了讨论.     

Many-electron Coulomb correlations in hopping transport along layers of quantum dots

Experimental data are analyzed on the hopping transport of holes in two-dimensional layers of Ge/Si(001) quantum dots (QDs) under conditions of the long-range Coulomb interaction of charge carriers localized in QDs, when the temperature dependence of the conductivity obeys the Efros-Shklovskii law. It is found that the parameters of hopping conduction significantly deviate from the predictions of the model of one-electron excitations in “Coulomb glasses.” Many-particle Coulomb correlations associated with the motion of holes localized in QDs play a decisive role in the processes of hopping charge transfer between QDs. These correlations lead to a substantial decrease in the Coulomb barriers for the tunneling of charge carriers.     

Prospecting Quantum Correlations and Examining Teleportation Fidelity in a Pair of Coupled Double Quantum Dots System

The topic of improving the ability of quantum systems to retain non-local features and enhance the efficiency of quantum protocols continues. This study delves into the thermal investigation of quantum correlations and teleportation fidelity of a two-qubit teleported state using excess electrons in a coupled double quantum dots system as a quantum channel. The study employs three reliable quantum quantifiers to prospect the resourcefulness and non-classicality of the system. The findings suggest that preserving quantum correlations and optimizing teleportation fidelity require minimizing tunneling coupling and maximizing Coulomb interaction. The study has significant implications for quantum physics and its practical applications in quantum information processing.     

Correlated electron tunneling through two separate quantum dot systems with strong capacitive interdot coupling

A system consisting of two independently contacted quantum dots with a strong electrostatic interaction shows an interdot Coulomb blockade when the dots are weakly tunnel coupled to their leads. How the blockade can be overcome by correlated tunneling when tunnel coupling to the leads increases is studied experimentally. The experimental results are compared with numerical renormalization group calculations using predefined (measured) parameters. Combining our experimental and theoretical results we identify transport through Kondo correlations due to the electrostatic interaction between the two dots.     

Electronic Green's functions in a T-shaped multi-quantum dot system

We developed a set of equations to calculate the electronic Green's functions in a T-shaped multi-quantum dot system using the equation of motion method. We model the system using a generalized Anderson Hamiltonian which accounts for finite intradot on-site Coulomb interaction in all component dots as well as for the interdot electron tunneling between adjacent quantum dots. Our results are obtained within and beyond the Hartree–Fock approximation and provide a path to evaluate all the electronic correlations in the multi-quantum dot system in the Coulomb blockade regime. Both approximations provide information on the physical effects related to the finite intradot on-site Coulomb interaction. As a particular example for our generalized results, we considered the simplest T-shaped system consisting of two dots and proved that our approximation introduces important corrections in the detector and side dots Green's functions, and implicitly in the evaluation of the system's transport properties. The multi-quantum dot T-shaped setup may be of interest for the practical realization of qubit states in quantum dot systems.     

Tunneling current spectroscopy of a nanostructure junction involving multiple energy levels

A multilevel Anderson model is employed to simulate the system of a nanostructure tunnel junction with any number of one-particle energy levels. The tunneling current, including both shell-tunneling and shell-filling cases, is theoretically investigated via the nonequilibrium Green's function method. We obtain a closed form for the spectral function, which is used to analyze the complicated tunneling current spectra of a quantum dot or molecule embedded in a double-barrier junction. We also show that negative differential conductance can be observed in a quantum dot tunnel junction when the Coulomb interactions with neighboring quantum dots are taken into account.     

Double-dot quantum ratchet driven by an independently biased quantum point contact

We study a double quantum dot (DQD) coupled to a strongly biased quantum point contact (QPC), each embedded in independent electric circuits. For weak interdot tunneling we observe a finite current flowing through the Coulomb blockaded DQD in response to a strong bias on the QPC. The direction of the current through the DQD is determined by the relative detuning of the energy levels of the two quantum dots. The results are interpreted in terms of a quantum ratchet phenomenon in a DQD energized by a nearby QPC.     

Biexcitons in artificial molecules with in-plane magnetic field

We theoretically investigate the effect of a magnetic field perpendicular to the tunneling direction on the ground-state properties of biexcitons in coupled quantum dots. The single-particle states are computed by numerically solving the 3D Scrödinger equation. The biexciton states are obtained by means of a configuration-interaction approach, which fully accounts for the intra- and inter-dot Coulomb correlations. We show that the biexciton ground state undergoes non-trivial transitions as a function of the applied magnetic field, which can be traced back to unexpected carrier localizations.     

Coherent electronic properties of coupled two-dimensional quantum dot arrays

In this paper we review our recent study of coherent electronic properties of coupled two-dimensional quantum dot arrays using numerical exact-diagonalization methods on a Mott–Hubbard type correlated tight-binding model. We predict the existence of a novel kind of persistent current in a two-dimensionalisolatedarray of quantum dots in a transverse magnetic field. We calculate the conductance spectrum for resonant tunneling transport through a coherent two-dimensional array of quantum dots in the Coulomb Blockade regime. We also calculate the effective two-terminal capacitance of an array coupled to bias leads.     

ac-Driven double quantum dots as spin pumps and spin filters

We propose and analyze a new scheme of realizing both spin filtering and spin pumping by using ac-driven double quantum dots in the Coulomb blockade regime. By calculating the current through the system in the sequential tunneling regime, we demonstrate that the spin polarization of the current can be controlled by tuning the parameters (amplitude and frequency) of the ac field. We also discuss spin relaxation and decoherence effects in the pumped current.     

Tunneling through two single molecular magnets in series arrangement junction in parallel/antiparallel situations

We investigate the spin-dependent tunneling transport in a heterostructure with two single molecular magnets (SMMs). The tunneling magnetoresistance (TMR) and negative differential conductance due to the strong resonant tunneling in the junction are demonstrated by the master equation approach. At low bias voltage, the device presents low/high resistant states with the initial states of the single molecular magnets parallel/antiparallel. Strong Coulomb repulsive interaction suppresses the current greatly in antiparallel situation. At high voltage, the middle system containing two SMMs tends to be non-polarized, and acts like ordinary quantum dots.     

Coulomb blockade in molecular quantum dots

The rate-equation approach is used to describe sequential tunneling through a molecular junction in the Coulomb blockade regime. Such device is composed of molecular quantum dot (with discrete energy levels) coupled with two metallic electrodes via potential barriers. Based on this model, we calculate nonlinear transport characteristics (conductance-voltage and current-voltage dependences) and compare them with the results obtained within a self-consistent field approach. It is shown that the shape of transport characteristics is determined by the combined effect of the electronic structure of molecular quantum dots and by the Coulomb blockade. In particular, the following phenomena are discussed in detail: the suppression of the current at higher voltages, the charging-induced rectification effect, the charging-generated changes of conductance gap and the temperature-induced as well as broadening-generated smoothing of current steps.     

Mesoscopic fluctuations of tunneling and cotunneling in quantum dots

Recent measurements of mesoscopic tunneling and cotunneling fluctuations in Coulomb blockaded ballistic quantum dots are presented. The statistics and parametric fluctuations (as a function of magnetic field) of Coulomb blockade peak heights are found to be consistent with random-matrix-theory predictions. Mesoscopic fluctuations of elastic cotunneling, measured in the valleys between blockade peaks, are also presented along with a semiclassical explanation of the observed enhancement of the magnetic field scale of cotunneling fluctuations compared to resonant tunneling fluctuations.     

Nonequilibrium transport through a vertical quantum dot in the absence of spin-flip energy relaxation

We investigate nonequilibrium transport in the absence of spin-flip energy relaxation in a few-electron quantum dot artificial atom. Novel nonequilibrium tunneling processes involving high-spin states, which cannot be excited from the ground state because of spin blockade, and other processes involving more than two charge states are observed. These processes cannot be explained by orthodox Coulomb blockade theory. The absence of effective spin relaxation induces considerable fluctuation of the spin, charge, and total energy of the quantum dot. Although these features are revealed clearly by pulse excitation measurements, they are also observed in conventional dc current characteristics of quantum dots.     

Current correlations for the transport of interacting electrons through parallel quantum dots in a photon cavity

We calculate the current correlations for the steady-state electron transport through multi-level parallel quantum dots embedded in a short quantum wire, that is placed in a non-perfect photon cavity. We account for the electron–electron Coulomb interaction, and the para- and diamagnetic electron–photon interactions with a stepwise scheme of configuration interactions and truncation of the many-body Fock spaces. In the spectral density of the temporal current–current correlations we identify all the transitions, radiative and non-radiative, active in the system in order to maintain the steady state. We observe strong signs of two types of Rabi oscillations.     

Quantum phase diagram of granular superconducting quantum dots array

We study the quantum phase diagram of granular superconducting quantum dots (GSQD) array. We implement the physics of granularity by considering site dependent Josephson couplings, on-site charging energies and the intersite interactions. We predict dimer density wave and staggered phases at the insulating state for higher order commensurability. Several parts of the quantum phase diagram of GSQD are in contrast with the clean superconducting quantum dots array. We also obtain the superconducting phase of GSQD. We develop the theory for weak tunneling conductance and the Coulomb energy is smaller than the superconducting gap.     

Coulomb oscillations of the current through spin-nondegenerate <Emphasis Type="Italic">p</Emphasis> states of InAs quantum dots

The electron transport is studied in split-gate structures fabricated on the basis of a modulation-doped heterostructure that contains a single quantum well and self-assembled InAs quantum dots near the 2D electron gas regions. The current passing through the channel with a denumerable set of InAs quantum dots is found to exhibit Coulomb oscillations as a function of the gate voltage. The oscillations are associated with the excited p states of InAs quantum dots, which are characterized by opposite spins and caused by lifting of the spin degeneracy of the p state due to the Coulomb interaction. The Coulomb oscillations of the current are observed up to a temperature of ～20 K. The Coulomb energy is found to be ΔE_c = 12.5 meV, which agrees well with the theoretical estimates for the p states of quantum dots in the structures under study.