TiO2/Au纳米棒阵列的制备及其光催化性能

采用电沉积和旋转涂膜相结合的方法成功制备了高度有序的TiO2/Au纳米棒阵列催化剂.扫描电镜和透射电镜结果表明,TiO2薄膜均匀地包覆在Au纳米棒的表面,形成核壳型的一维阵列结构.X射线衍射分析表明所获得TiO2为(101)晶面优先生长的锐钛矿晶相.紫外-可见漫反射光谱显示,由于Au和TiO2间肖特基结的存在造成吸收红...     

The performance of chitosan layer in Au/n-Si sandwich structures as a barrier modifier

This study focused on the structural, optical and electrical features of chitosan organic layer obtained by spin coating technique both on glass and n-Si substrates. XRD results indicated that chitosan has polycrystalline orthorhombic nature. While optical transmittance spectrum of the chitosan organic layer exhibited an increasing tendency in the visible range, band gap energy value was calculated as 4.23 eV for chitosan by UV–Vis spectrometer. Electrical performance of organic chitosan layer in a Schottky device was studied by fabricating of Au/n-Si and Au/chitosan/n-Si devices. The suitability of Au/chitosan/n-Si sandwich devices in optoelectronic applications were tested under dark and illumination conditions. The Au/chitosan/n-Si sandwich device exhibits good photodiode characteristics. Furthermore, the effect of X-ray radiation doses on the electrical properties of the Au/chitosan/n-Si sandwich device was also investigated. In order to get information about electrical characteristics as a function of X-ray radiation doses, Au/chitosan/n-Si sandwich device was exposed to X-ray radiation in same exposure time and various doses. The results highlighted that the performance of the device with chitosan organic interface layer deteriorated with increasing radiation dose. In addition, the transportation mechanism of chitosan based Schottky device was discussed in details.     

Electrical and structural properties of Pd/V/n‐type InP (111) Schottky structure as a function of annealing temperature

Palladium/Vanadium (Pd/V) Schottky structures are fabricated on n‐type InP (100) and the electrical, structural and surface morphological characteristics have been studied at different annealing temperatures. The extracted barrier height of as‐deposited Pd/V/n‐InP Schottky diode is 0.59 eV (I–V) and 0.79 eV (C–V), respectively. However, the Schottky barrier height of the Pd/V Schottky contact slightly increases to 0.61 eV (I–V) and 0.84 eV (C–V) when the contact is annealed at 200 °C for 1 min. It is observed that the Schottky barrier height of the contact slightly decreases after annealing at 300, 400 and 500 °C for 1 min in N₂ atmosphere. From the above observations, it is clear that the electrical characteristics of Pd/V Schottky contacts improve after annealing at 200 °C. This indicates that the optimum annealing temperature for the Pd/V Schottky contact is 200 °C. Basing on the auger electron spectroscopy and X‐ray diffraction results, the formation of Pd‐In intermetallic compound at the interface may be the reason for the increase of barrier height upon annealing at 200 °C. The formation of phosphide phases at the Pd/V/n‐InP interface could be the reason for the degradation in the barrier heights after annealing at 300, 400 and 500 °C. From the AFM results, it is evident that the overall surface morphology of the Pd/V Schottky contacts is fairly smooth. Copyright © 2011 John Wiley & Sons, Ltd.     

Electrochemical fabrication of large-area Au/TiO2 junctions

Electrically continuous Au thin films were prepared on polycrystalline TiO₂ by pulsed galvanostatic electrodeposition. Large-area electrically continuous films 10–30 nm in thickness and approximately 0.25 cm² in area were created using a series of 5 ms bipolar current pulses. The film morphology was characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM) which showed a network of interconnected Au islands. The electrical properties of the resulting Schottky junction were also investigated and the conduction was found to deviate considerably from ideal thermionic emission. The effective barriers were higher than in Au/TiO₂ junctions prepared by electron beam evaporation.     

Effect of electron radiation on electrical parameters of Zn/n-Si/Au–Sb and Zn/ZnO/n-Si/Au–Sb diodes

In this study, RF-magnetron sputtered ZnO thin film as an interlayer was used to improve radiation tolerance of the Schottky diodes. The structural and optical measurements showed that the ZnO thin films have hexagonal crystal structure with preferential c-axis orientation, 20.39 nm grain sizes and 3.15 eV bandgap. The electrical parameters such as ideality factor, barrier height and series resistance of Zn/n-Si/Au–Sb and Zn/ZnO/n-Si/Au–Sb diodes were calculated before and after electron radiation at 25, 50 and 75 gray doses. Deviation values of the parameters showed that the ZnO as an interlayer caused to improved radiation tolerance of the diodes.

     

Electrical,structural and morphological characteristics of rapidly annealed Ni/Pd Schottky rectifiers on n‐type GaN

Schottky rectifiers are fabricated on n‐type GaN using Ni/Pd metallization scheme and its characteristics have been investigated by current‐voltage (I‐V), Capacitance‐Voltage (C‐V), X‐Ray Diffraction (XRD) and SIMS measurements as a function of annealing temperature. The calculated Schottky barrier height of the as‐deposited contact was found to be 0.60 eV (I‐V), 0.71 eV (C‐V) with an ideality factor of 1.44. However, the barrier height slightly increases after annealing at 300, 400 and 500 °C. On the basis of the experimental results, a high‐quality Schottky contact with barrier height and ideality factor of 0.81 eV (I‐V), 0.88 eV (C‐V) and 1.13 respectively, can be obtained after annealing at 600 °C for 1 min in a nitrogen atmosphere. Further, after annealing at 700 °C, it is found that the barrier height slightly decreased to 0.74 eV (I‐V) and 0.85 eV (C‐V). From the above observations, one can note that Ni/Pd Schottky contact exhibits excellent electrical properties after a rapid thermal annealing at 600 °C. According to the SIMS and XRD analysis, the formation of gallide phases at the Ni/Pd/n‐GaN interface could be the reason of the barrier height increase at elevated annealing temperatures. The Atomic Force Microscopy (AFM) results show that the overall surface morphology of Ni/Pd Schottky contacts on n‐GaN is fairly smooth. The above observations reveal that Ni/Pd Schottky metallization scheme was a good choice for the fabrication of high‐temperature and high‐power device applications. Copyright © 2010 John Wiley & Sons, Ltd.     

La2O3助剂对Au/TiO2催化氧化CO性能的影响

采用溶胶-凝胶法制备了TiO2以及La2O3-TiO2载体, 再用沉积沉淀法制备Au/TiO2和Au/La2O3-TiO2催化剂, 并对催化剂的CO氧化反应活性进行测试. 结果表明, La2O3助剂可以显著提高催化剂催化氧化CO的活性. X射线衍射(XRD)、程序升温脱附(TPD)、N2吸附-脱附(BET)表征结果表明, La2O3助剂不仅提高了催化剂比表面积, 抑制了TiO2晶粒尺寸的长大, 并且增强了TiO2的晶格应变, 在O2气氛吸附过程中主要在TiO2表面形成O-物种. 原位傅立叶变换红外(FT-IR)结果进一步表明, La的掺杂不仅提高了吸附在Au活性位CO的氧化速率, 还使TiO2表面形成第二种活性位, 从而显著提高了催化活性.     

三氧化钼与金纳米粒子复合薄膜光致变色特性的研究

MoO3具有光致变色特性,在大屏幕显示、高密度存储和灵巧窗等研究领域中具有潜在的应用前景^[1-3]。但由于MoO3薄膜中相当一部分光生载流子被复合,其参与变色反应的利用率很低,导致MoO3薄膜的变色效率较低,使其难以实现实用化。半导体表面修饰贵金属后,在半导体／金属界面上可形成Schottky势垒,这将有助于光生载流子的有效分离,从而提高其利用率。据此,本文采用在MoO3薄膜表面修饰金纳米粒子的方法,制备了MnO3和金纳米粒子的复合薄膜（MoO3/Au),变色试验结果表明,MoO3/Au复合薄膜的紫外和可见光变色效率相对MoO3薄膜均有较大的提高。     

Highly Selective and Low Damage Etching of GaAs/AlGaAs Heterostructure using Cl2/O2 Neutral Beam

Highly selective and low damage etching of the GaAs cap layer on AlGaAs is essential in fabricating GaAs/AlGaAs high electron mobility transistors. The GaAs on AlGaAs was etched using a low energy Cl₂/O₂ neutral beam and the Schottky device characteristics fabricated on the exposed AlGaAs were compared with those fabricated after the etching using wet etching and a Cl₂/O₂ ion beam. Using a low energy Cl₂/O₂ ion beam or a Cl₂/O₂ neutral beam, highly selective etching of the GaAs cap layer to AlGaAs similar to wet etching could be achieved through the formation of Al₂O₃ on the exposed AlGaAs during the etching. When the electrical characteristics of the Schottky devices were compared, the devices fabricated after the etching using the neutral beam showed the best electrical characteristics such as electrical stability, low leakage current, higher barrier height, etc. by showing low damage to the exposed AlGaAs surface.     

A key to the storage stability of Au/TiO(2) catalyst

The effect of Au(3+) percentage in Au/TiO(2) on its storage stability at room temperature was studied by varying the drying temperature and storage duration of a deposition-precipitation prepared Au/TiO(2) sample. Carefully-designed room temperature storage in a desiccator, in the dark to exclude any interference of light irradiation, was referenced to the freezing storage (255 K) in a refrigerator. The samples were characterized by well-calibrated H(2)-TPR, TEM and TG measurements. Reduction of Au(3+) ions and agglomeration of metallic Au particles were shown to be the main reasons for the deterioration of Au/TiO(2) during desiccator-storage. Correlating the percentage of Au(3+) ions, determined by H(2)-TPR, with the storage stability of Au/TiO(2) for CO oxidation at 273 K revealed that Au/TiO(2) samples with higher Au(3+) percentages (>90%) were much more stable during the desiccator-storage than those with higher percentages of metallic Au. Residual water in fresh Au/TiO(2) before storage showed a promotional effect on gold reduction and agglomeration during storage. By maximizing the percentage of Au(3+) ions and minimizing the residual water in the fresh sample, the deterioration of the Au/TiO(2) catalyst was successfully avoided during desiccator-storage of up to 150 days in dark. A possible mechanism of Au/TiO(2) deterioration during the desiccator-storage was also discussed.     

Fabrication and electrical characterization of nickel/p-Si Schottky diode at low temperature

In this study the current–voltage and capacitance–voltage characteristics of metal semiconductor Ni/p-Si(100) based Schottky diode on p- type silicon measured over a wide temperature range (60–300 K) have been studied on the basis of thermionic emission diffusion mechanism and the assumption of a Gaussian distribution of barrier heights. The parameters ideality factor, barrier height and series resistance are determined from the forward bias current–voltage characteristics. The barrier height for Ni/p-Si(100) Schottky diode found to vary between 0.513 eV and 0.205 eV, and the ideality factor between 2.34 and 8.88 on decreasing temperature 300–60 K. A plot involving the use of ϕ_b versus 1/T data is used to gather evidence for the occurrence of a Gaussian distribution of barrier height and obtain the value of standard deviation. The observed temperature dependences of barrier height and ideality factor and non-linear activation energy plot are attributed to the Gaussian distribution of barrier heights at the metal-semiconductor contact. The barrier height of Ni/p-Si(100) Schottky diode was also measured over wide temperature from the capacitance-voltage study.     

Au-CuO／TiO2催化剂用于CO2中微量H2的脱除

用沉积沉淀法制备了Au-CuO/TiO2催化剂和Au/TiO2催化剂,考察了沉淀温度、沉淀pH、焙烧温度和Cu/Au摩尔比等制备工艺条件对Au-CuO/TiO2催化剂性能的影响,确定了适宜的催化剂制备工艺条件.结果表明,Au-CuO/TiO2催化剂对CO2中微量H2的脱除具有较好的活性和稳定性.还考察了还原和H2S中毒处理先后的顺序对催化剂H2脱除活性的影响.结果表明,Au/TiO2催化剂基本上不受处理顺序的影响,而H2S处理顺序对Au-CuO/TiO2催化剂的性能有较为明显的影响,这说明还原后的Au-CuO/TiO2催化剂形成了Au-Cu合金。     

Catalytic role of gold in gold-based catalysts: a density functional theory study on the CO oxidation on gold

Gold-based catalysts have been of intense interests in recent years, being regarded as a new generation of catalysts due to their unusually high catalytic performance. For example, CO oxidation on Au/TiO(2) has been found to occur at a temperature as low as 200 K. Despite extensive studies in the field, the microscopic mechanism of CO oxidation on Au-based catalysts remains controversial. Aiming to provide insight into the catalytic roles of Au, we have performed extensive density functional theory calculations for the elementary steps in CO oxidation on Au surfaces. O atom adsorption, CO adsorption, O(2) dissociation, and CO oxidation on a series of Au surfaces, including flat surfaces, defects and small clusters, have been investigated in detail. Many transition states involved are located, and the lowest energy pathways are determined. We find the following: (i) the most stable site for O atom on Au is the bridge site of step edge, not a kink site; (ii) O(2) dissociation on Au (O(2)-->2O(ad)) is hindered by high barriers with the lowest barrier being 0.93 eV on a step edge; (iii) CO can react with atomic O with a substantially lower barrier, 0.25 eV, on Au steps where CO can adsorb; (iv) CO can react with molecular O(2) on Au steps with a low barrier of 0.46 eV, which features an unsymmetrical four-center intermediate state (O-O-CO); and (v) O(2) can adsorb on the interface of Au/TiO(2) with a reasonable chemisorption energy. On the basis of our calculations, we suggest that (i) O(2) dissociation on Au surfaces including particles cannot occur at low temperatures; (ii) CO oxidation on Au/inactive-materials occurs on Au steps via a two-step mechanism: CO+O(2)-->CO(2)+O, and CO+O-->CO(2); and (iii) CO oxidation on Au/active-materials also follows the two-step mechanism with reactions occurring at the interface.     

基于等离激元热电子调控的全谱光催化产氢增强（英文）

等离激元效应在光催化体系中的集成为实现广谱光吸收提供了一个新的途径,然而等离激元热电子的较低迁移率和不确定扩散方向使得其光催化效率仍较低.等离激元金属与n型半导体接触后,其界面间会形成肖特基结.在特定波长太阳光照射下,等离激元金属将其表面等离子体能量聚集在表面自由电子上,进而产生热电子.当这些热电子具有的能量高于肖特基势垒时,热电子便可注入到半导体导带上.与此同时,半导体上的电子可以通过肖特基接触发生回流,与金属上的空穴复合,进而降低半导体-等离激元金属复合材料的光催化性能.因此,为了提高光催化效率,如何调控等离激元热电子迁移和充分利用等离激元效应是一个重要挑战.本文尝试将"表面异质结"与肖特基结相结合的复合结构,得以有效地调控等离激元热电子的迁移.在该复合结构中,金纳米颗粒和铂纳米颗粒分别作为等离激元吸光单元和助催化剂,集成在TiO_2纳米片表面.其中"表面异质结"是由TiO_2纳米片的两种不同表面晶面所构成,我们选择由{001}和{101}两组晶面组成的TiO_2纳米片作为半导体衬底.该结构中的{001}晶面导带能级高于{101}导带能级,因而电子由高能级的{001}流向低能级的{101}晶面,可以用来引导等离激元热电子从可见光响应的金纳米颗粒向TiO_2进行高效转移.通过巯基丙酸的桥联作用,将等离激元Au纳米颗粒锚定在TiO_2纳米片的{001}晶面上,获得Au-TiO_2{001}样品.另一方面,利用TiO_2纳米片自身光生电荷导向性光沉积,得到与{101}晶面结合形成的Au-TiO_2{101}样品.我们对两组样品进行光电流和光催化产氢实验对比,确认在"表面异质结"诱导下Au-TiO_2{001}样品中Au产生的光生热电子可以更好地注入到TiO_2纳米片导带上.我们进一步通过光沉积Pt纳米颗粒来判定光生电子所能到达的区域,验证了以上结论.与此同时,肖特基结由铂纳米颗粒与TiO_2纳米片所形成,可以促使电子由TiO_2向铂纳米颗粒进行转移,而避免发生向金纳米颗粒的反向迁移,从而在Au-TiO_2体系中实现高效的单向载流子转移.基于该设计,等离激元光催化剂实现了明显改善的全谱光催化产氢性能.本文为全谱光催化的复合结构理性设计提供了一个新的思路.     

Bioinspired Au/TiO2 photocatalyst derived from butterfly wing (Papilio Paris)

The reticular hierarchical structure of butterfly wings (Papilio Paris) is introduced as template for Au/TiO(2) photocatalyst by depositing the Au nanoparticles on TiO(2) matrix, which is carried out by a water-ethanol sol-gel procedure combined with subsequent calcination. The obtained Au/TiO(2) nanocomposites present the reticular hierarchical structure of butterfly wings, and Au nanoparticles with an average size of 7 nm are homogeneously dispersed in TiO(2) substrate. Benefiting from such unique reticular hierarchical structure and composition, the biomorphic Au/TiO(2) exhibits high-harvesting capability and presents superior photocatalytic activity. Especially, the biomorphic Au/TiO(2) at the nominal content of gold to titanium of 8 wt% shows the highest photocatalytic activity and can completely decompose methyl orange within 80 min, which is obviously higher than that of commercial Degussa P25 powders.     

TiO2晶型对Au/TiO2上光催化分解臭氧的影响

以不同晶型TiO2为载体,采用沉积-沉淀法制备了Au/TiO2光催化剂,并用紫外-可见漫反射光谱、X射线光电子能谱(XPS)和表面光电压谱(SPS)等手段进行了催化剂表征,详细考察了Ti O2晶型对Au/TiO2光催化分解臭氧活性的影响.结果表明,光催化分解臭氧的活性顺序为Au/P25>Au/Anatase>Au/Rutile,这与不同的单一Ti O2对光催化臭氧分解的活性顺序是一致的.但在TiO2上沉积金后,其对光催化臭氧的分解活性有了显著的提高.由催化剂的Au4fXPS分析发现,不同晶型Ti O2上的电荷向金簇迁移的能力有明显差异,加之载体本身对光催化臭氧分解活性不同,两者协同作用导致负载金催化剂光催化分解臭氧活性的不同.SPS信号强度与催化剂光催化活性有很好的对应关系,SPS信号越强,光生电子和空穴分离效率越高,光催化活性越好.     

Localized Partial Oxidation of Acetic Acid at the Dual Perimeter Sites of the Au/TiO(2) Catalyst-Formation of Gold Ketenylidene

Chemisorbed acetate species derived from the adsorption of acetic acid have been oxidized on a nano-Au/TiO(2) (～3 nm diameter Au) catalyst at 400 K in the presence of O(2)(g). It was found that partial oxidation occurs to produce gold ketenylidene species, Au(2)═C═C═O. The reactive acetate intermediates are bound at the TiO(2) perimeter sites of the supported Au/TiO(2) catalyst. The ketenylidene species is identified by its measured characteristic stretching frequency ν(CO) = 2040 cm(-1) and by (13)C and (18)O isotopic substitution comparing to calculated frequencies found from density functional theory. The involvement of dual catalytic Ti(4+) and Au perimeter sites is postulated on the basis of the absence of reaction on a similar nano-Au/SiO(2) catalyst. This observation excludes low coordination number Au sites as being active alone in the reaction. Upon raising the temperature to 473 K, the production of CO(2) and H(2)O is observed as both acetate and ketenylidene species are further oxidized by O(2)(g). The results show that partial oxidation of adsorbed acetate to adsorbed ketenylidyne can be cleanly carried out over Au/TiO(2) catalysts by control of temperature.     

A critical assessment of the Mott-Schottky analysis for the characterisation of passive film-electrolyte junctions

The widespread use of the Mott-Schottky plots to characterize the energetics of passive film/electrolyte junction is critically reviewed in order to point out the limitation of such approach in describing the electronic properties of passive film as well in deriving the correct location of the characteristic energy levels of the junction. The frequency dependency of M-S plots frequently observed in the experimental data gathered in a sufficiently large range of frequency is extensively discussed for a relatively thick (160 nm) thermally aged amorphous niobia (α-Nb₂O₅) film immersed in electrolytic solution. The relatively simple equivalent electrical circuit describing an ideally blocking behaviour of the junction allows a direct comparison of the experimental data analysis based on the use of Mott-Schottky or amorphous semiconductor Schottky barrier interpretative models. Moreover the theoretical simulations of the M-S plots based on the theory of crystalline semiconductor suggest an electronic structure of the investigated passive film containing a distribution of localized electronic states deep lying in energy in agreement with the model of amorphous semiconductor Schottky barrier.     

同步辐射光电了能谱研究在团簇存金红石相TiO2-（1×1）表面的生长和稳定性

利用同步辐射高分辨光电子能谱研究了金团簇在部分还原TiO2-（1×1）表面的生长和稳定性．价带谱实验结果观察到非常少量金团簇的沉积导致了Ti^3＋的3d峰完全消失,表明金团簇成核在TiO2-（1×1）表面的氧缺陷位．Au4f芯电子光电子能谱实验结果证明了TiO2-（1×1）表面氧缺陷位向金团簇转移电荷．还对比研究了化学剂量比和部分还原的TiO2-（1×1）表面上金团簇的热稳定性．当金团簇尺寸相近时部分还原的TiO2-（1×1）表面上金团簇要比化学剂量比的TiO2-（1×1）面上金团簇稳定;在相同的表面上尺寸大的金团簇要比尺寸小的金团簇稳定．     

TiO2纳米片/巢状分级结构纳米阵列薄膜的制备及其在染料敏化太阳能电池中的应用

采用水热合成法在氟掺杂二氧化锡(FTO)导电玻璃基底上得到TiO2纳米阵列薄膜,并进一步通过NaOH溶液水热处理制备了由巢状纳米阵列及纳米片覆盖层构成的TiO2纳米阵列分级结构一体化薄膜.采用场发射扫描电镜(FE-SEM),X射线衍射(XRD),紫外-可见(UV-Vis)漫反射光谱和吸收光谱技术对TiO2薄膜的结构和性质进行表征.FE-SEM结果表明:分级结构TiO2薄膜膜厚为1.5μm,薄膜由一层纳米片覆盖层(约0.2μm高)和一层巢状纳米阵列层(约1.3μm高)组成.XRD谱图表明TiO2薄膜为锐钛矿相.UV-Vis光谱显示分级结构TiO2薄膜具有较强的光捕获能力和染料吸附能力.TiO2纳米片/巢状分级结构纳米阵列薄膜作为光阳极,可有效地提高染料敏化太阳能电池的光电转换效率,其短路电流(Jsc)为7.79mA·cm-2,开路电压(Voc)为0.80V,填充因子(FF)为0.40,光电转换效率(η)为2.48%,其光电转换效率较TiO2纳米阵列薄膜提高了近10倍.