MOCVD生长铁电氧化物薄膜MO源研究进展

高性能铁电氧化物薄膜是当今功能材料的研究热点之一.随着新型MO源的不断研究与开发,利用MOCVD技术制备高质量铁电薄膜材料得到了快速的发展.本文在分析金属醇盐和金属β-二酮化合物等MO源的结构与其物性依赖关系基础上,分类综述了近年来在用于MOCVD方法生长铁电氧化物薄膜的新型MO源研究和开发方面的发展动态与趋势,为MOCVD方法制备铁电薄膜材料MO源的选择提供有用的参考与借鉴.     

ECR Plasma in Growth of Cubic GaN by Low Pressure MOCVD

To heteroepitaxally grow the crystalline cubic-GaN (c-GaN) film on the substrates with large lattice mismatch is basically important for fabricating the blue or ultra-violet laser diodes based on cubic group III nitride materials. We have obtained the crystalline c-GaN film and the heteroepitaxial interface between c-Gan and GaAs(001) substrate by the ECR Plasma-Assisted Metal Organic Chemical Vapor Deposition (PA-MOCVD) under low-pressure and low-temperature (600°C) on a homemade ECR-plasma Semiconductor Processing Device (ESPD). In order to decrease the growth temperature, the ECR plasma source was adopted as the activated nitrogen source, therefore the working pressure of MOCVD was decreased down to the region less than 1 Pa. To eliminate the damages from energetic ions of current plasma source, a Multi-cusp cavity-coupling ECR Plasma source (MEP) was selected to use in our experiment. To decrease the strain and dislocations induced from the large lattice mismatch between c-GaN and GaAs substrate, the plasma pretreatment procedure i.e., the initial growth technique was investigated. The experiment arrangements, the characteristics of plasma and the growth procedure, the characteristics of c-GaN film and interface between c-GaN and GaAs(001), and the roles of ECR plasma are described in this contribution.     

Sol-Gel Processing of PbZrO3 Thin Films

PbZrO₃ (PZ) thin films have been prepared by 2-methoxyethanol route from lead oxide or lead acetate and zirconium n-butoxide. The use of lead oxide as lead source and the seeding layer of TiO₂ on Pt/TiO₂/SiO₂/Si substrate facilitate the formation of the perovskite phase.     

Pechini 方法制备铌酸锂薄膜的研究

采用Pechini方法，以柠檬酸为配位剂与金属离子配位，在Pt/Ti/SiO₂/Si基片上制备了多晶铌酸锂(LiNbO₃)薄膜。以13C核磁共振、拉曼光谱和红外光谱分析研究了柠檬酸与金属离子的配位情况，提出了一种Nb-柠檬酸配合物可能的分子结构，即柠檬酸作为三齿配体，以端羧基、-OH和中间羧基与Nb离子配位。以TG-DTA对Li-Nb凝胶前驱体的热分解历程进行分析，以拉曼光谱和XRD分析了LiNbO₃薄膜在不同温度下热处理的相组成和结构。结果表明，600 ℃下退火2 h可得到单相多晶LiNbO₃薄膜，薄膜表面致密、平整，晶粒的平均尺寸为50 nm。     

Chemical Solution Deposition of Barium Titanate Thin Films with Ethylene Glycol as Solvent for Barium Acetate

Chemical solution deposition (CSD) of BaTiO₃ (BT) or BT-based thin films relies on using a carboxylic acid and alcohol as the solvents for alkaline-earth carboxylate and transition-metal alkoxide, respectively; however, the esterification reaction of the solvents may lead to in-situ water formation and precipitation. To avoid such an uncontrolled reaction, we developed a route in which ethylene glycol (EG) is used as the solvent for Ba-acetate. The EG-based BT coating solutions are stable for at least a few months. The thermal decomposition of the BT xerogel obtained by drying the EG-based solutions depends on the choice of the solvent for the Ti-alkoxide as well: in the case of EG and 2-methoxyethanol solvents carbon residues are removed at only about 1100 °C, while in the case of ethanol it is concluded at about 700 °C. About 100 nm thick BT films derived from the EG-ethanol solution deposited on platinized silicon reveal dense, crack-free columnar microstructure. They exhibit local ferro- and piezoelectric properties. The macroscopic polarization-electric field loops were obtained up to a quite high electric field of about 2.4 MV/cm. The EG-ethanol based CSD route is a viable alternative to the established acetic acid–alcohol route for BT and BT-based films.     

Deposition of Diamondlike Carbon Film and Mass Spectrometry Measurement in CH4/N2 RF Plasma

The deposition of diamondlike carbon (DLC) film and the measurements of ionic species by means of mass spectrometry were carried out in a CH₄/N₂ RF (13.56 MHz) plasma at 0.1 Torr. The film deposition rate greatly depended on both CH₄/N₂ composition ratio and RF power input. It was decreased monotonically as CH₄ content decreased in the plasma and then rapidly diminished to negligible amounts at a critical CH₄ content, which became large for higher RF power. The rate increased with increasing RF power, reaching a maximum value in 40% CH₄ plasma. The predominant ionic products in CH₄/N₂ plasma were NH⁺ ₄ and CH₄N⁺ ions, which were produced by reactions of hydrocarbon ions, such as CH⁺ ₃, CH⁺ ₂, CH⁺ ₅, and C₂H⁺ ₅ with NH₃ molecules in the plasma. It was speculated that the production of NH⁺ ₄ ion induced the decrease of C₂H⁺ ₅ ion density in the plasma, which caused a reduction in higher hydrocarbon ions densities and, accordingly, in film deposition rate. The N⁺ ₂ ion sputtering also plays a major role in a reduction of film deposition rate for relatively large RF powers. The incorporation of nitrogen atoms into the bonding network of the DLC film deposited was greatly suppressed at present gas pressure conditions.     

微波水热辅助电沉积法制备Bi_2S_3薄膜

采用微波水热辅助电沉积法在ITO导电玻璃表面制备了形貌均匀具有纳米棒、纳米板状结构的Bi2S3薄膜。利用XRD、XPS、场发射扫描显微镜(FESEM)、TEM和UV-Vis-NearIR对薄膜的结构、形貌、光学性能进行了表征。结果显示微波水热辅助电沉积法制备的Bi2S3薄膜具有良好的结晶性能;随着微波水热温度的提高,所制备Bi2S3薄膜的结晶性能先增强后降低,合适的温度是130℃。与电沉积法制得薄膜相比,采用微波水热辅助电沉积法制得Bi2S3薄膜的禁带宽度由1.44eV增加到1.84eV。     

Pulsed-Spray Radiofrequency Plasma Enhanced Chemical Vapor Deposition of CuInS2 Thin Films

Thin films of CuInS₂ were grown on various substrates at a temperature of 523 K from two metal-organic precursors using radiofrequency plasma enhanced chemical vapor deposition (PECVD). Two precursor molecules, with different solubility properties, were dissolved in appropriate solvents and sprayed into the plasma region in the PECVD chamber. The resulting films were examined for atomic composition, growth rate, crystalline orientation, and uniformity. Films made from each precursor differed in thickness, atomic composition, and crystallinity. The uniformity of the film was fairly good from near the edge to the center of the substrate, and evidence for a chalcopyrite-like structure was found in several samples deposited from one of the precursor molecules.     

ChemInform Abstract: Deposition of Aluminum Nitride Thin Films by MOCVD from the Trimethylaluminum-Ammonia Adduct.

ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 100 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a “Full Text” option. The original article is trackable via the “References” option.     

Influence of the Structure of Precursors on the Crystallization of PbTiO3 Thin Films

PbTiO₃ (PT) thin films and their respective sols derived from three lead sources have been studied in order to elucidate the role of the starting materials in the crystallization of the products. EXAFS analysis of sols revealed similar oligomeric Ti-units in PT precursors derived from lead oxide or lead 2-methoxyethoxide acetate and a significantly different local Ti neighborhood in those derived from lead acetate. Structural details of the perovskite phase in the thin films follow the same pattern of similarity.     

二氧化钛纳米晶薄膜的吸收光谱和激发发射光谱

由TiO₂反胶束溶胶制备一系列TiO₂纳米晶薄膜，对膜的吸收光谱和激发发射光谱研究表明制备的膜存在有二种模式的跃迁，直接跃迁和间接跃迁。由于厚膜中存在较强的表面相互作用，厚膜的直接跃迁禁带宽与薄膜相比发生了红移。在不同陈化时间，浸渍相同次数制得的膜具有相同的直接跃迁禁带宽。除浸渍一次的膜不存在间接跃迁外，所有的膜具有相同的间接跃迁禁带宽。所有的膜具有几乎相同的发射光谱模式。     

Sol-Gel Preparation and Characterization of Ag-TiO2 Nanocomposite Thin Films

Ag-TiO₂ thin films were prepared with a sol-gel route, using titanium isopropoxide and silver nitrate as precursors, at 0.03 and 0.06 Ag/Ti nominal atomic ratios. After drying at 80°C, the films were fired at 300°C and 500°C for 30 min. The films were analysed by X-ray diffraction (XRD) with glancing angle, and X-ray photoelectron spectroscopy (XPS), with depth profiling of the concentration. XPS analysis showed the presence of C and N as impurities in the nanocomposite films. Their concentration decreased with increasing the firing temperature. Chemical state analysis showed that Ag was present in metallic state, except for the very outer layer where it was present as Ag⁺. For the films prepared with a Ag/Ti concentration of 0.06, depth profiling measurements of the film fired at 300°C showed a strong Ag enrichment at the outer surface, while composition remained almost constant within the rest of the film, at 0.019. For the films heated to 500°C, two layers were found, where the Ag/Ti ratios were 0.015 near the surface and 0.026 near the substrate.     

电化学沉积技术制备LiNiO2薄膜及表征

Well-crystallized LiNiO₂ thin films were prepared directly on nickel substrates in LiOH solution by constant current electrochemical deposition technique at 95 ℃. The as-prepared LiNiO₂ thin films were characterized by using XRD, SEM and XPS, and the results reveal that the as-prepared LiNiO₂ thin films are dense and uniform in surface and show hexagonal structure. The influence of processing parameters such as reaction temperature, duration, electrical current density as well as the concentration of LiOH solution on the structure and morphologies of as-prepared LiNiO₂ thin films were studied，and the preferable electrochemical processing conditions for preparing LiNiO₂ thin films were suggested.     

Tunable Diode Laser Diagnostic Studies of H2-Ar-O2 Microwave Plasmas Containing Methane or Methanol

Tunable infrared diode laser absorption spectroscopy has been used to detect the methyl radical and ten stable molecules in H₂-Ar-O₂ microwave plasmas containing up to 7.2% of methane or methanol, under both flowing and static conditions. The degree of dissociation of the hydrocarbons varied between 30 and 90% and the methyl radical concentration was found to be in the range 10 ¹⁰ –10 ¹² molecules cm ^–3 . The methyl radical concentration and the concentrations of the stable C-2 hydrocarbons C ₂ H ₂ , C ₂ H ₄ , and C ₂ H ₆ , produced in the plasma decayed exponentially when increasing amounts of O ₂ were added at fixed methane or methanol partial pressures. In addition to detecting the hydrocarbon species, the major products CO, CO ₂ , and H ₂ O were also monitored. For the first time, formaldehyde, formic acid, and methane were detected in methanol microwave plasmas, formaldehyde was detected in methane microwave plasmas. Chemical modeling with 57 reactions was used to successfully predict the concentrations in methane plasmas in the absence of oxygen and the trends for the major chemical product species as oxygen was added.     

在LaNiO3-Pt复合电极上Pb(Zr，Ti)O3铁电薄膜及其成分梯度薄膜的制备和研究

LaNiO₃(LNO) thin films were prepared on Pt(111) / Ti / SiO₂/ Si substrate by metal-organic decomposition (MOD) method. Pb(Zr,Ti)O₃ ferroelectric thin films and their compositionally graded thin films were prepared on LNO / Pt / Ti / SiO₂ /Si substrates by Sol-gel method. The composition depth profile of a typical up-graded film was determined by using a combination of Auger Electron Spectroscopy (ASE) and Ar Ion Etching. The results confirm that the processing method produces graded composition changes. XRD analysis showed that the graded thin films possessed composite structure of tetragonal and rhombohedral. The dielectric constants of Up-graded and Down-graded thin films were higher than that of each thin film unit. The dielectric constants were 277 and 269 at 10 kHz, respectively. The loss tangents were 0.019 and 0.018 at 10 kHz, respectively. The Hysteresis loops showed that the remanent polarizations of graded thin films were higher than that of each thin film unit, but the coercive fields were smaller. The remanent polarizations of Up-graded and Down-graded thin films were 30.06 and 26.96 μC·cm^-2, respectively. The coercive fields were 54.14, 54.23 kV·cm^-1, respectively. The pyroelectric coefficients of Up-graded and Down-graded thin films were 4.62, 2.51×10^-8 C·cm^-2·K^-1 at room temperature, respectively. They were higher than that of each thin film unit.     

Synthesis,Ferroelectric and Optical Properties of (Pb,Ca)TiO3 Thin Films by Soft Solution Processing

Calcium modified lead titanate sol was synthesized using a soft solution processing, the so-called polymeric precursor method. In soft chemistry method, soluble precursors such as lead acetate trihydrate, calcium carbonate and titanium isopropoxide, as starting materials, were mixed in aqueous solution. Pb_0.7Ca_0.3TiO₃ thin films were deposited on platinum-coated silicon and quartz substrates by means of the spinning technique. The surface morphology and crystal structure, dielectric and optical properties of the thin films were investigated. The electrical measurements were conducted on metal-ferroelectric-metal (MFM) capacitors. The typical measured small signal dielectric constant and dissipation factor at a frequency of 100 kHz were 299 and 0.065, respectively, for a thin film with 230 nm thickness annealed at 600°C for 2 h. The remanent polarization (2P_r) and coercive field (E _c) were 32 C/cm² and 100 kV/cm, respectively. Transmission spectra were recorded and from them, refractive index, extinction coefficient, and band gap energy were calculated. Thin films exhibited good optical transmissivity, and had optical direct transitions. The present study confirms the validity of the DiDomenico model for the interband transition, with a single electronic oscillator at 6.858 eV. The optical dispersion behavior of PCT thin film was found to fit well the Sellmeir dispersion equation. The band gap energy of the thin film, annealed at 600°C, was 3.56 eV. The results confirmed that soft solution processing provides an inexpensive and environmentally friendly route for the preparation of PCT thin films.     

Metal-Organic Chemical Vapor Deposition (MOCVD) Synthesis of Heteroepitaxial Pr0.7Ca0.3MnO3 Films: Effects of Processing Conditions on Structural/Morphological and Functional Properties

Calcium-doped praseodymium manganite films (Pr_0.7Ca_0.3MnO₃, PCMO) were prepared by metal-organic chemical vapor deposition (MOCVD) on SrTiO₃ (001) and SrTiO₃ (110) single-crystal substrates. Structural characterization through X-ray diffraction (XRD) measurements and transmission electron microscopy (TEM) analyses confirmed the formation of epitaxial PCMO phase films. Energy dispersive X-ray (EDX) and X-ray photoelectron spectroscopy (XPS) characterization was used to confirm lateral and vertical composition and the purity of the deposited films. Magnetic measurements, obtained in zero-field-cooling (ZFC) and field-cooling (FC) modes, provided evidence of the presence of a ferromagnetic (FM) transition temperature, which was correlated to the transport properties of the film. The functional properties of the deposited films, combined with the structural and chemical characterization collected data, indicate that the MOCVD approach represents a suitable route for the growth of pure, good quality PCMO for the fabrication of novel spintronic devices.     

Preparation and Characterization of Bismuth Doped TiO2 Thin Films

A series of Bismuth-doped titanium oxide (Bi-doped TiO₂) thin films on glass substrates have been prepared by sol-gel dip coating process. The prepared catalysts were characterized by XRD and XPS. The photocatlytic activity of the thin film catalysts was evaluated through the photodegradation of aqueous methyl orange under UV illumination. The experiments demonstrated that the Bi-doped TiO₂ prepared was anatase phase. The doped bismuth was in the 3⁺ oxidation state. The presence of Bi significantly enhanced the photocatalytic activity of TiO₂ films. At calcination temperature of 500°C, with doping concentration of 2 wt %, Bi-doped TiO₂ thin film showed the highest photocatalyic activity.     

沉积温度对Cu2O薄膜生长过程及光电性能的影响

以硫酸铜为铜源,采用一步化学浴沉积法制备出了晶粒尺寸可调的纳米晶Cu₂O薄膜。通过X射线衍射、扫描电镜和紫外可见分光光度法研究了沉积温度对薄膜晶体结构、成核密度、晶粒尺寸、薄膜厚度和光电性能的影响。结果表明,当在60~90℃范围内调节温度时,能够很好地控制晶粒尺寸、薄膜厚度,并将禁带宽度控制在33~51nm、392~556nm和2.47~2.61eV范围内;随着晶粒尺寸的减小,紫外可见光谱的吸收边有明显的蓝移。此外还对薄膜的生长过程,成核密度和颗粒尺寸变化的机理进行了讨论。     

沉积温度对Cu_2O薄膜生长过程及光电性能的影响(英文)

以硫酸铜为铜源,采用一步化学浴沉积法制备出了晶粒尺寸可调的纳米晶Cu2O薄膜。通过X射线衍射、扫描电镜和紫外可见分光光度法研究了沉积温度对薄膜晶体结构、成核密度、晶粒尺寸、薄膜厚度和光电性能的影响。结果表明,当在60~90℃范围内调节温度时,能够很好地控制晶粒尺寸、薄膜厚度,并将禁带宽度控制在33~51 nm、392~556 nm和2.47~2.61 eV范围内;随着晶粒尺寸的减小,紫外可见光谱的吸收边有明显的蓝移。此外还对薄膜的生长过程,成核密度和颗粒尺寸变化的机理进行了讨论。