Chemical solution processing and characterization of Ba(Zr,Ti)O<Subscript>3</Subscript>/LaNiO<Subscript>3</Subscript> layered thin films

Ba(Zr,Ti)O₃/LaNiO₃ layered thin films have been synthesized by chemical solution deposition (CSD) using metal-organic precursor solutions. Ba(Zr,Ti)O₃ thin films with smooth surface morphology and excellent dielectric properties were prepared on Pt/TiO _x /SiO₂/Si substrates by controlling the Zr/Ti ratios in Ba(Zr,Ti)O₃. Chemically derived LaNiO₃ thin films crystallized into the perovskite single phase and their conductivity was sufficiently high as a thin-film electrode. Ba(Zr,Ti)O₃/LaNiO₃ layered thin films of single phase perovskite were fabricated on SiO₂/Si and fused silica substrates. The dielectric constant of a Ba(Zr_0.2Ti_0.8)O₃ thin film prepared at 700°C on a LaNiO₃/fused silica substrate was found to be approximately 830 with a dielectric loss of 5% at 1 kHz and room temperature. Although the Ba(Zr_0.2Ti_0.8)O₃ thin film on the LaNiO₃/fused silica substrate showed a smaller dielectric constant than the Ba(Zr_0.2Ti_0.8)O₃ thin film on Pt/TiO _x /SiO₂/Si, small temperature dependence of dielectric constant was achieved over a wide temperature range. Furthermore, the fabrication of the Ba(Zr,Ti)O₃/LaNiO₃ films in alternate thin layers similar to a multilayer capacitor structure was performed by the same solution deposition process.     

Synthesis and Properties of Highly Conductive Thin Films as Buffer Layer from Sol-Gel Process

We prepared epitaxial growth SrRuO₃ thin film on LaAlO₃ (001) (LAO) single crystal substrate and highly oriented BaTiO₃ ferroelectric thin film on the epitaxial SrRuO₃ thin film. A homogeneous precursor solution for preparing SrRuO₃ thin film was prepared with Sr(O—i—C₃H₇)₂ and Ru(NO)(NO₃)₃ as starting materials, and 2-methoxy ethanol as solvents. The as-coated thin films were heat treated at temperatures from 723 to 1273 K for 1 h in air. SrRuO₃ grew epitaxially on LAO(001) substrate, which were confirmed by XRD theta-2theta method and XRD pole figure analysis. The crystallographic relationship of the film and substrate was SrRuO₃(001) parallel to LAO(001) and SrRuO₃[110] parallel to LAO[100]. A homogeneous precursor solution for preparing BaTiO₃ thin film was prepared with Ti[O—n—(CH₂)₃CH₃]₄ and Ba(OCOCH₃)₂ as starting materials, and acetic acid, 2-methoxy ethanol. SrRuO₃ coated LAO substrates were coated by spin-coating method with the coating solution. The as-coated thin films were heat treated at temperatures from 973 to 1173 K in air. It was confirmed that the thin films were growing orientated for c-axis by measurement of XRD theta-2theta method.     

Low Pressure Chemical Vapor Deposition of III/V-Nitrides Using Organometallics and Hydrazoic Acid Precursors

In and Ga nitride films have been deposited on various substrates using organometallics and hydrazoic acid (HN₃) as nitrogen precursor. The film deposition was carried out under low pressure (10^?510 ^?6 Torr) and low V/III ratios (1-10). XPS analysis indicated that the ln(Ga):N atomic ratio of unity can be easily achieved by adjusting the experimental conditions. For the growth of InN on Si(100) substrate, 308-nm photon beam is needed to speed up the film deposition rate. He(II) UPS spectra of InN films are in good agreement with the result of a pseudo-potential calculation for InN valence band, while the spectra of GaN compare favorably with a recent semi-ab-initio calculation and with the UPS results of GaN single crystal films. The bandgap of our GaN films is ～ 3.3 cV as determined by photoluminescence and UV-VIS absorption spectra. Raman spectra taken from GaN Films showed peaks at 66 and 88 meV for TO and LO phonons, respectively, indicating a wurtzite structure of the GaN. In a corresponding X-ray diffraction spectrum, the (002) peak is about 400 times more intense than that of the (101) peak, suggesting that the GaN layers are highly oriented with the c-axis normal or nearly so to the Al₂O₃ substrate.     

Microstructure and properties of sol-gel derived Pb(Zr<Subscript>0.3</Subscript>Ti<Subscript>0.7</Subscript>)O<Subscript>3</Subscript> thin films on GaN/sapphire for nanoelectromechanical systems

Highly (111) oriented, phase-pure perovskite Pb(Zr_0.3Ti_0.7)O₃ (or PZT 30/70) thin films were deposited on single-crystal, (0001) wurtzite GaN/sapphire substrates using the sol-gel process and rapid thermal annealing. The phase, crystallinity, and stoichiometry of annealed PZT films were evaluated by X-ray diffraction and Rutherford backscattering spectroscopy. The atomic force microscopy revealed a smooth PZT surface (rms roughness ∼1.5 nm) with striations and undulations possibly influenced by the nature of the underlying GaN surface. The cross-sectional field-emission scanning electron microscopic images indicated a sharper PZT/GaN interface compared to that of sol-gel derived PZT on (111) Pt/TiO₂/SiO₂/(100) Si substrates. The capacitance-voltage (C-V) characteristics for PZT in the Pt/PZT/GaN (metal-ferroelectric-semiconductor or MFS) configuration were evaluated as a function of annealing temperature and applied voltage. The observed C-V hysteresis stemmed from trapped charge at defect sites within PZT. Also, the lower capacitance density (C/A = 0.35 μF/cm², where A is the area of an electrode) and remnant polarization (P _r ∼ 4 μC/cm²) for PZT in the MFS configuration, compared to the values for PZT in the MFM configuration (Pt/PZT/Pt), were attributed to the high depolarization field within PZT.     

Preparation and Optical Properties of Gold-Dispersed BaTiO3, PGO (Pb5Ge3O11) and PLT (Pb1-1.5xLaxTiO3) Thin Films by Sol-Gel Process

Gold-dispersed BaTiO₃, PGO and PLT thin films, which will be used for third-order nonlinear optical devices, were prepared by sol-gel process with spin-coating using HAuCl₄4H₂O, Ba(CH₃COO)₂, Ti[O(CH₂)₃CH₃]₄, Pb(CH₃COO)₂3H₂O, Ge[O-n-C₄H₉]₄, La(CH₃COO)₃1.5 H₂O as starting materials. The thin films were heat-treated in air at temperatures ranging from 400 to 800 for 1 h. The nonlinear optical property of these thin films was measured by the degenerate four-wave mixing (DFWM) method using a frequency-doubled Nd: YAG laser with 20 ps pulse duration. Third-order nonlinear susceptibility χ⁽³⁾ of gold-dispersed BaTiO₃, PGO and PLT thin films with 5 vol% of gold were 1.410⁻⁶ esu, 3.510⁻⁷ esu respectively. The large χ⁽³⁾ may be ascribed to the high dielectric constant of the films.     

The influence of film thickness and process temperature on <Emphasis Type="Italic">c</Emphasis>-axis orientation of Bi<Subscript>3</Subscript>TiTaO<Subscript>9</Subscript> thin films

Bi-layered ferroelectric Bi₃TiTaO₉ (BTT) thin films with different thickness (ranging from 100 to 400 nm) were successfully fabricated on Pt(111)/TiO₂/SiO₂/(100)Si substrates using chemical solution deposition (CSD) technique at different annealing temperatures. The c-axis orientation of the films was affected by film thickness and process temperature. The thinner the film and the higher the process temperature, the higher the c-axis orientation. With the increase of film thickness, the stress decreased but the film roughness increased, which led to the decrease of c-axis orientation of films. BTT films annealed at 800°C were found to have much improved remament polarization (P _r ) than that of films annealed at 650 and 750°C. The P _r and coercive field (E _c ) values were measured to be 2 μC/cm² and 100 kV/cm, respectively. BTT films showed well-defined ferroelectric properties with grain size larger than 100 nm.     

Sol-gel processing of lead-free (Na,K)NbO<Subscript>3</Subscript> ferroelectric films

The sol-gel processing of lead-free (Na,K) NbO₃ ferroelectric films was studied. Sodium ethoxide (NaOC₂H₅) and potassium ethoxide (KOC₂H₅) were prepared by reacting solid Na and K with ethanol (99.7%) in a solvent of 2-methoxyethanol. 0.5-μm-thick (Na,K)NbO₃ thin films with orthorhombic perovskite structure were obtained by pyrolyzing at 400°C and annealing at 800–900°C. The films had relatively dense and uniform microstructure with grain size of about 50 nm, whose ferroelectricity was proved by the P-E hysteresis loop measurement. It was found that excess K was effective to reduce the annealing temperature for the crystallization of sol-gel-derived (Na,K)NbO₃ thin films.     

Structure and Optical Properties of 0.1BiFeO3-0.9SrBi2Nb2O9 Thin Films Using a Modified Sol-Gel Technique

Fe-doped SrBi₂Nb₂O₉ precursor solution was synthesized using bismuth nitrate Bi(NO₃)₃·5H₂O, strontium nitrate Sr(NO₃)₂, iron nitrate Fe(NO₃)₃·9H₂O, and niobium ethoxide Nb(OC₂H₅)₅ as starting materials, ethylene glycol monomethyl ether (C₃H₈O₂) as the solvent. 0.1BiFeO₃-0.9SrBi₂Nb₂O₉ thin films were prepared on fused quartz substrates using sol-gel processing. The surface morphology and crystal structure and optical properties of the thin films were investigated. The thin film annealing at 400°C were found to be amorphous, and the thin films crystallize to a perovskite structure after a post-deposition annealing at 600°C for 1 h in air. The grain of thin film was evenly distributed. The thin films exhibit the designed optical transmission, while the optical transition is indirect in nature. Their optical band gap is about 2.5 eV.     

Molecular adsorption and the chemistry of plasma-deposited thin organic films: Deposition of oligomers of ethylene glycol

Weakly ionized, radio-frequency, glow-discharge plasmas formed from methyl ether or the vapors of a series of dimethyl oligo(ethylene glycol) precursors (general formula: H-(CH₂OCH₂)_n-H;n=1 to 4) were used to deposit organic thin films on polytetrafluoroethylene. X-ray photoelecton spectroscopy (XPS) and static secondary ion mass spectrometry (SIMS) of the thin films were used to infer the importance of adsorption of molecular species from the plasma onto the surface of the growing, organic film during deposition. Films were prepared by plasma deposition of each precursor at similar deposition conditions (i.e., equal plasma power (W), precursor flow rate (F), and deposition duration), and at conditions such that the specific energy (energy/mass) of the discharge (assumed to be constrained byW/FM, whereM=molecular weight of the precursor) was constant. At constantW/FM conditions, two levels of plasma power (and, hence, twoFM levels) and three substrate temperatures were examined. By controlling the energy of the discharge (W/FM) and the substrate temperature, these experiments enabled the study of effects of the size and the vapor pressure of the precursor on the film chemistry. The atomic % of oxygen in the film surface, estimated by XPS, and the intensity of theC-O peak in the XPS C_ls spectra of the films, were used as indicators of the degree of incorporation of precursor moieties into the plasma-deposited films. Analysis of films by SIMS suggested that these two measures obtained from XPS were good indicators of the degree of retention in the deposited films of functional groups from the precursors. The XPS and SIMS data suggest that adsorption of intact precursor molecules or fragments of precursor molecules during deposition can have a significant effect on film chemistry. Plasma deposition of low vapor pressure precursors provides a convenient way of producing thin films with predictable chemistry and a high level of retention of functional groups from the precursor.     

Thick Fe2O3, Fe3O4 films prepared by the chemical solution deposition method

Fe₂O₃, Fe₃O₄ films have been prepared from Fe(OCH₂CH(CH₃)₂)₃–(CH₃)₂CHCH₂OH–2.2′-diethanola- mine (DEA)–poly(vinylpyrrolidone) (PVP) solutions by the spin-(SC) and dip-coating (DC) technique on SiO₂ and Si substrates. The maximum film thickness achieved without crack formation has been increased by incorporation of PVP (relative molecular weights 40000 and 360000) into the precursor solution. The stability of the precursor solutions was remarkably increased by addition of DEA. Compact, dense, and crack-free Fe₂O₃ films with thicknesses 900 nm (DC), 450 nm (SC), have been obtained via single-step deposition cycle. Higher-molecular-weight PVP has been more effective in increasing the thickness. The minimum concentration of DEA, which results in pronounced increase of solutions stability, is about R _P (n(DEA)/n(Fe) = 0.1). The high content of carboneous residue in the pyrolysed Fe₂O₃ films promotes the formation of Fe₃O₄ films via reduction in a gas flow of H₂/N₂ gas mixture. Microstructure, surface morphology, and magnetic properties of the films have been also investigated using SEM, AFM, and SQUID, respectively.     

Surface Chemistry of Ga(CH3)3 on Pd(111) and Effect of Pre-covered H and O

The adsorption and decomposition of trimethylgallium (Ga(CH₃)₃, TMG) on Pd(111) and the effect of pre-covered H and O were studied by temperature programmed desorption spectroscopy and X-ray photoelectron spectroscopy. TMG adsorbs dissociatively at 140 K and the surface is covered by a mixture of Ga(CH₃)_x (x=1, 2 or 3) and CHx(a) (x=1, 2 or 3) species. During the heating process, the decomposition of Ga(CH₃)₃ on clean Pd(111) follows a progressive Ga-C bond cleavage process with CH₄ and H₂ as the desorption products. The desorption of Ga-containing molecules (probably GaCH₃) is also identi ed in the temperature range of 275-325 K. At higher annealing temperature, carbon deposits and metallic Ga are left on the surface and start to di use into the bulk of the substrate. The presence of precovered H(a) and O(a) has a signi cant effect on the adsorption and decomposition behavior of TMG. When the surface is pre-covered by saturated H₂, CH₄, and H₂ desorptions are mainly observed at 315 K, which is ascribed to the dissociation of GaCH₃ intermediate. In the case of O-precovered surface, the dissociation mostly occurs at 258 K, of which a Pd-O-Ga(CH₃)₂ structure is assumed to be the precusor. The presented results may provide some insights into the mechanism of surface reaction during the lm deposition by using trimethylgallium as precursor.     

纯相Li2MnO3薄膜的制备及作为锂离子电池正极材料的电化学行为

采用固相烧结法制备了纯相Li₂MnO₃正极材料及靶材,采用脉冲激光沉积（PLD）法在氧气气氛、不同温度下沉积了Li₂MnO₃薄膜. 通过X射线衍射（XRD）和拉曼（Raman）光谱表征了薄膜的晶体结构,采用扫描电镜（SEM）观察薄膜形貌及厚度,利用电化学手段测试了Li₂MnO₃薄膜作为锂离子电池正极材料性能. 结果表明,PLD 方法制备的纯相Li₂MnO₃薄膜随着沉积温度升高薄膜结晶性变好. 25 ℃沉积的薄膜难以可逆充放电,400 ℃沉积的薄膜具有较高的电化学活性和循环稳定性. 相对于粉末材料,400与600 ℃制备的Li₂MnO₃薄膜电极平均放电电位随着循环次数的衰减速率明显低于相应的粉体材料.     

Synthesis,Ferroelectric and Optical Properties of (Pb,Ca)TiO3 Thin Films by Soft Solution Processing

Calcium modified lead titanate sol was synthesized using a soft solution processing, the so-called polymeric precursor method. In soft chemistry method, soluble precursors such as lead acetate trihydrate, calcium carbonate and titanium isopropoxide, as starting materials, were mixed in aqueous solution. Pb_0.7Ca_0.3TiO₃ thin films were deposited on platinum-coated silicon and quartz substrates by means of the spinning technique. The surface morphology and crystal structure, dielectric and optical properties of the thin films were investigated. The electrical measurements were conducted on metal-ferroelectric-metal (MFM) capacitors. The typical measured small signal dielectric constant and dissipation factor at a frequency of 100 kHz were 299 and 0.065, respectively, for a thin film with 230 nm thickness annealed at 600°C for 2 h. The remanent polarization (2P_r) and coercive field (E _c) were 32 C/cm² and 100 kV/cm, respectively. Transmission spectra were recorded and from them, refractive index, extinction coefficient, and band gap energy were calculated. Thin films exhibited good optical transmissivity, and had optical direct transitions. The present study confirms the validity of the DiDomenico model for the interband transition, with a single electronic oscillator at 6.858 eV. The optical dispersion behavior of PCT thin film was found to fit well the Sellmeir dispersion equation. The band gap energy of the thin film, annealed at 600°C, was 3.56 eV. The results confirmed that soft solution processing provides an inexpensive and environmentally friendly route for the preparation of PCT thin films.     

Photochromic Inorganic/Organic Self-Assembled Superlattice Films

Phosphotungstic acid (PW₁₂) and 1,10-diaminodecane (1,10-DAD) molecules have been alternatively assembled on 3-aminopropyltriethyoxysilane modified quartz or silicon substrate to form multicomposite mutilayer thin films by the molecular deposition technique. Thus-obtained films were characterized by UV-visible, XRD, X-ray reflection (XRR), and XPS spectra. Results show that the layer-by-layer self-assembly of PW₁₂ and 1,10-DAD leads to a well-ordered superlattice-layered structure with a d-spacing of 3.19 nm, which exhibits extremely exciting photochromic properties. Based on the experimental data, a presumable interlayer structural model has also been suggested.     

Spectroscopic Characterization of CH4 + CO2 Plasmas Excited by a Dielectric Barrier Discharge at Atmospheric Pressure

Plasma processing of a (CH ₄ +CO ₂ ) mixture can lead to the formation of synthesis gas (CO+H ₂ ). The use of a nonthermal plasma for this type of process seems very promising. We report here an electric and spectroscopic characteristic of plasma created in a (CH ₄ +CO ₂ ) mixture by a high-voltage, steep front-voltage (>10 ¹² V/s), very-short-pulse triggered dielectric barrier discharge in a tubular cell. Particular attention was payed to the determination of the rotational temperature for C ₂ . Time resolved investigation of the Swan band leads to an estimated value around 3000 K.     

反式2-甲基-2-丁烯酸甲酯与臭氧反应机理的计算研究

采用G3B3方法构建反式2-甲基-2-丁烯酸甲酯与O3反应体系以及后续Criegee自由基有、无水分子参与下异构化反应的势能面剖面.结果表明,反式2-甲基-2-丁烯酸甲酯与O3反应首先生成一个稳定的五元环中间体,此中间体按断键位置不同后续裂解反应存在两条路径,分别生成产物P1(CH3CHOO+CH3OC(O)C(CH3)O)和P2(CH3CHO+CH3OC(O)C(CH3)OO).利用经典过渡态理论(TST)并结合Wigner矫正模型计算了200-1200 K温度区间内标题反应的速率常数kTST/W.计算结果显示,294 K时,该反应速率常数为7.55×10-18cm3molecule-1s-1,与Bernard等对类似反应所测实验值非常接近.生成的Criegee自由基(CH3CHOO和CH3OC(O)C(CH3)OO)可分别与水分子发生α-加成及β-氢迁移反应,其中Criegee自由基与水的α-加成反应较其与水的β-氢迁移反应具有优势.另外与无水分子参与CH3CHOO和CH3OC(O)C(CH3)OO异构化反应相比,水分子的参与使得异构化反应较为容易进行.     

Growth of semiconducting iron sulfide thin films by chemical vapor deposition from air-stable single-source metal organic precursor for photovoltaic application

Semiconducting nanostructured iron sulfide thin films were prepared by aerosol chemical vapor deposition at 673 and 723?K from newly synthesized iron complex of dithiocarbo-1,2,3,4-tetrahydroquinoline [Fe(S₂CNC₉H₁₀)₂]. The degree of film surface roughness was determined by atomic force microscopy. The nature of the deposited thin films formed was determined by a combination of EDX analysis and glancing angle X-ray diffraction.     

原位水解沉积制备高效氮化钽微球太阳能分解水光阳极

利用一种新的原位水解沉积方法,以在高湿度空气中老化的甲醇中作为溶剂,通过乙醇钽水解而成前驱体微球颗粒沉积,制备出了高效的Ta₃N₅微球光电极,其1.6 V（vs RHE）电极电位下的光电流值达到了6.6 mA·cm^-2。相反地,在新鲜的甲醇溶液中没有钽前驱体微球颗粒沉积。这表明甲醇中水的含量对Ta₃N₅微球光电极的形成十分重要。另外,本制备方法也能方便地在其他透明导电衬底上制备出Ta₃N₅。     

A transparent boron-nitrogen thin film formed by plasma CVD out of the discharge region

A transparent boron-nitrogen thin film of thickness 550 nm was successfully deposited out of the discharge region by rf plasma CVD. The deposition was performed with diborane (4.8 vol % in N₂) as the reactant gas and argon as the carrier gas by an inductively coupled reactor at a frequency of 13.56 MHz. The transparent films could be obtained at a low pressure of about 30 Pa, at a discharge power level of 30 W, and at room temperature without heating the substrate. The thin films obtained by rf plasma are compared with those obtained by microwave plasma. Both the refractive index and the deposition rate for the films deposited by microwave plasma are discussed according to the deposition conditions.     

Study of the optimal condition for electroplating of Bi2S3 thin films and their photoelectrochemical characteristics

Bismuth sulfide (Bi₂S₃) thin films were electrodeposited from non-aqueous dimethyl sulfoxide medium containing Bi(NO₃)₃ and thiourea as the precursor salts, triethanol amine as the complexing agent, and TritonX-100 as the surface active agent. The prepared films were subjected to rigorous experimentation in order to validate their potential candidature for solar cells. The films exhibited band gap energy of ∼1.3 eV and resistivity of the order of 2 × 10⁶ Ω cm at room temperature as was obtained from UV–Vis spectroscopy and four-probe measurements, respectively. Scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and energy dispersive analysis of X-ray were employed to reveal the morphology, structure, and chemical composition of the film matrix. The Bi₂S₃ films were found to be non-decomposable up to the temperature of 1,000 °C with the help of thermogravimetry–differential thermal analysis. The Nyquist and Mott–Schottky plots derived from electrochemical impedance spectroscopy measurements provided important information regarding electrical and semiconducting properties of the films. The n-type film with a donor density of the order of ∼10²³ m⁻³ displayed reasonable photoactivity under illumination and is recommended as a promising candidate for potential photoelectrochemical applications.