The role of the dopant in the magnetism of Fe-doped SnO2 films

Transparent pure and Fe-doped SnO₂ thin films were grown by pulsed laser deposition technique on LaAlO₃ substrates. X-ray diffraction shows that the films are polycrystalline and have the rutile structure. Surprisingly, the pure film presents magnetic-like behavior at room temperature with a saturated magnetization of almost one-third of the doped film (∼3.6 and 11.3 emu/g, respectively) and its magnetization could not be attributed to any impurity phase. Taking into account the magnetic moment measured in the pure film, the effective contribution of the impurity in the doped one can be inferred to be ∼2 μ_B per Fe atom. A large magnetic moment was also predicted by an ab initio calculation in the doped system, which increases if an oxygen vacancy is present near the Fe impurity.     

Band-edge exciton transitions in (Ga1−xMnx)N diluted magnetic semiconductor films with above room temperature ferromagnetic transition

(Ga_1−xMn_x)N thin films grown on GaN buffer layers by using molecular beam epitaxy were investigated with the goal of producing diluted magnetic semiconductors (DMSs) with band-edge exciton transitions for applications in optomagnetic devices. The magnetization curve as a function of the magnetic field at 5 K indicated that ferromagnetism existed in the (Ga_1−xMn_x)N thin films, and the magnetization curve as a function of the temperature showed that the ferromagnetic transition temperature of the (Ga_1−xMn_x)N thin film was above room temperature. Photoluminescence and photoluminescence excitation spectra showed that band-edge exciton transitions in (Ga_1−xMn_x)N thin films appeared. These results indicate that the (Ga_1−xMn_x)N DMSs with a magnetic single phase hold promise for potential applications in spin optoelectronic devices in the blue region of the spectrum.     

Effects of Mn substitution of Co and Fe in spinel CoFe2O4 thin films

Effects of Mn substitution for Co and Fe on the structural and magnetic properties of inverse-spinel CoFe₂O₄ have been investigated. Mn_xCo_1−xFe₂O₄ and Mn_yCoFe_2−yO₄ thin films were prepared by a sol–gel method. The observed increase of the lattice constant of Mn_xCo_1−xFe₂O₄ indicates that Mn²⁺ ions substitute the octahedral Co²⁺ sites. Conversion electron Mössbauer spectroscopy data indicate that a fraction of octahedral Co²⁺ ions exchange sites with tetrahedral Fe³⁺ ions through Mn doping. Vibrating-sample magnetometry data exhibit a large increase of saturation magnetization for both Mn_xCo_1−xFe₂O₄ and Mn_yCoFe_2−yO₄ films compared to that of the CoFe₂O₄ film. Such enhancement of magnetization can be explained in terms of a breaking of ferrimagnetic order induced by the Co²⁺ migration.     

Optical and magnetic properties of (Ga1−xMnx)N/GaN digital ferromagnetic heterostructures

(Ga_1−xMn_x)N/GaN digital ferromagnetic heterostructures (DFHs) and (Ga_1−xMn_x)N/GaN grown on GaN buffer layers by using molecular beam epitaxy have been investigated. The photoluminescence (PL) spectra showed band-edge exciton transitions. They also showed peaks corresponding to the neutral donor-bound exciton and the exciton transitions between the conduction band and the Mn acceptor, indicative of the Mn atoms acting as substitution. The magnetization curves as functions of the magnetic field at 5 K indicated that the saturation magnetic moment in the (Ga_1−xMn_x)N/GaN DFHs decreased with increasing Mn mole fraction and that the saturation magnetic moment and the coercive field in the (Ga_1−xMn_x)N/GaN DFHs were much larger than those in (Ga_1−xMn_x)N thin films. These results indicate that the (Ga_1−xMn_x)N/GaN DFHs hold promise for potential applications in spintronic devices.     

Magnetic and electrical properties of amorphous Ge1−xCrx thin films grown by low temperature vapor deposition

Amorphous Ge_1−xCr_x thin films are deposited on (1 0 0)Si by using a thermal evaporator. Amorphous phase is obtained when Cr concentration is lower than 30.7 at%. The electrical resistivities are 1.89×10⁻³–0.96×10² Ω cm at 300 K, and decrease with Cr concentration. The Ge_1−xCr_x thin films are p-type. The hole concentrations are 5×10¹⁶–7×10²¹ cm⁻³ at 300 K, and increase with Cr concentration. Magnetizations are 7.60–1.57 emu/cm³ at 5 K in the applied field of 2 T. The magnetizations decrease with Cr concentration and temperature. Magnetization characteristics show that the Ge_1−xCr_x thin films are paramagnetic.     

Magnetic properties of field-annealed FeCo thin films

Fe₅₀Co₅₀ thin films with thickness of 30 and 4 nm have been produced by rf sputtering on glass substrates, and their surface has been observed with atomic force microscopy (AFM) and magnetic force microscopy (MFM); MFM images reveal a non-null component of the magnetization perpendicular to the film plane. Selected samples have been annealed in vacuum at temperatures of 300 and 350 °C for times between 20 and 120 min, under a static magnetic field of 100 Oe. DC hysteresis loops have been measured with an alternating gradient force magnetometer (AGFM) along the direction of the field applied during annealing and orthogonally to it. Samples with a thickness of 4 nm display lower coercive fields with respect to the 30 nm thick ones. Longer annealing times affect the development of a harder magnetic phase more oriented off the film plane. The field applied during annealing induces a moderate magnetic anisotropy only on 30 nm thick films.     

Effects of sintering temperature and atmosphere on magnetism in Mn-doped TiO2 bulk samples

Magnetic properties have been investigated on Mn doped TiO₂(Ti_0.98Mn_0.02O₂) bulk samples prepared by solid state reaction, which were sintered at different temperature ranging from 450 ^°C to 900 ^°C in air and argon atmosphere, respectively. The results show that the magnetic properties were strongly dependent on the sintering temperature and atmosphere. For samples sintered in air, the magnetization initially increase with the increase of sintering temperature up to 600 ^°C and thereafter it decrease. While the magnetization of samples sintered in argon atmosphere decreases monotonically with the increase of sintering temperature. Furthermore, for samples sintered at 600 ^°C in air, the magnetic susceptibility exhibits a dominant Curie-Weiss behaviour and no magnetic transition is observed over the temperature range from 10 to 300 K. In contrast, for samples sintered in argon atmosphere, besides the magnetic transition near 45 K perhaps caused by Mn₃O₄, another magnetic transition appears near room temperature.     

Magnetic and structural properties of Fe ion-implanted GaN

The magnetic and structural properties of Fe ion-implanted GaN was investigated by various measurements. XRD results did not show any peaks associated with second phase formation. The magnetization curve at 5 K showed ferromagnetic behavior for 900 °C-annealed sample. In zero-field-cooled (ZFC) and field-cooled (FC) magnetization measurements, the irreversibility and a cusp-like behavior of the ZFC curve were observed for 900 °C-annealed sample. These behaviors are typically observed in superparamagnetic or spin glass phase. While the temperature dependence magnetization of 800 °C-annealed sample showed non-Brillouin-like curve and it is not exhibited ferromagnetic hysteresis at 5 K. In XPS measurement, the coexistence of metallic Fe (Fe⁰) and Fe–N bond (Fe²⁺ and Fe³⁺) for Fe 2p core level spectra is observed in as-implanted sample. But 700–900 °C-annealed samples showed only Fe–N bond (Fe²⁺ and Fe³⁺) spectra. For Ga 3d core level spectra only Ga–N bonds showed for as implanted with 700–900 °C-annealed samples. From XPS results, it could be explained that magnetic property of our films originated from FeN structures.     

Magnetic nanocomposite thin films of BaFe12O19 and TiO2 prepared by sol-gel method

The composite films with different weight ratio of barium ferrite to titanium dioxide are successfully prepared using sol-gel method for the first time. The morphology, crystal structure and magnetic properties of composite films are investigated with atomic force microscopy, X-ray diffraction and vibrating sample magnetometry. The results show that the composite films are uniform with no microcracks. The grain diameters are less than 100 nm. With the increase of barium ferrite, the grain diameter decreases. The composite films are composed of M-type hexagonal barium ferrite and rutile titanium dioxide. The composite films possess the excellent magnetic properties. The specific saturation magnetization and coercivity reach 18.3 emu/g and 3350 Oe, respectively. The application of composite films in magnetic recording and electromagnetic absorption fields is promising.     

Preparation and magnetoresistance of thin CrO2 films

Highly textured chromium dioxide (CrO₂) films have been deposited on Al₂O₃ single-crystal substrates by atmospheric pressure chemical vapor deposition method (CVD). X-ray diffraction patterns show that the CrO₂ films are (1 0 0)-oriented on Al₂O₃ (0 0 1) substrates, and are (1 0 1)-oriented on Al₂O₃ (0 1 2) substrates. Scanning electron microscopy images indicate that the (1 0 0)-oriented CrO₂ films grown on Al₂O₃ (0 0 1) substrates have smoother surface and better qualities than that grown on Al₂O₃ (0 1 2) substrate. At room temperature, the magnetoresistance of the (1 0 0)- and (1 0 1)-oriented CrO₂ films are nearly same, and both show a linear dependence on applied magnetic field. While at 80 K, the (1 0 1)-oriented CrO₂ films show a much larger magnetoresistance compared with the (1 0 0)-oriented CrO₂ films. The reasons are briefly discussed.     

Magnetism in spin-coated pristine TiO2 thin films

Spin coated pristine TiO₂ thin films show magnetic behaviors that are similar to those of pulsed laser ablated TiO₂ thin films that were reported previously. It seems that in this kind of material, ferromagnetism (FM) is indeed intrinsic, and it can be achieved by various deposition techniques. The fact that oxygen annealing degrades the magnetic moment implies that the observed magnetism is likely due to defects or/and oxygen vacancies. Moreover, thick films that were deposited under the same growth conditions have the magnetic ordering degraded enormously. It is found that as for FM in undoped TiO₂ films made by the chemical solution deposition, not only do defects/oxygen vacancies play a role, but also the confinement effects seem to be important.     

Magnetic and optical properties of epitaxial n-type Cu-doped ZnO thin films deposited on sapphire substrates

In this paper, we report on pulsed laser deposition of n-type Cu-doped ZnO thin films on c-plane sapphire substrates at 700°C. XRD and HRTEM were employed to study the epitaxial growth relationship between the Zn_1−x Cu _x O film and sapphire substrate. Absorption measurements showed excitonic nature of the thin films and a decrease in the bandgap energy with increased Cu concentration was observed. Such as-deposited films showed room temperature ferromagnetism with Curie temperature (T _c ) at around 320 K. The moment per Cu atom decreases as the Cu concentration increases. The largest magnetic moment about 0.81μ _B /Cu atom was observed for Zn_0.95Cu_0.05O thin films. The presence of any magnetic second phase was ruled out and the ferromagnetism was attributed to Cu ions substituted directly into the ZnO lattice.     

Monolayer deposition of L10 FePt nanoparticles via electrospray route

The deposition monolayers of L1₀ FePt nanoparticles via an electrospraying method and the magnetic properties of the deposited film were studied. FePt nanoparticles in a size of around 2.5 nm in diameter, prepared by a liquid process, were used as a precursor. The size of the deposited particles can be controlled up to 35 nm by controlling the sprayed droplet size that is formed by adjusting the precursor concentration and the precursor flow rate. The droplets were heated in a tubular furnace at a temperature of up to 900 °C to remove all organic compounds and to transform the FePt particles from disordered face centered cubic to an ordered FCT phase. Finally, the particles were deposited in the form of a monolayer film on a silicon substrate by electrostatic force and characterized by scanning electron microscopy. The monolayer of particles was obtained by the high charge on particles obtained during the electrospraying process. The magnetic properties of the monolayer were investigated by magneto-optic Kerr effect measurements. Coercivity up to 650 Oe for a film consisting of 35 nm L1₀ FePt nanoparticles was observed after heat treatment at a temperature of 800 °C.     

Effect of SnO2 coating on the magnetic properties of nanocrystalline CuFe2O4

Nanocrystalline CuFe₂O₄ and CuFe₂O₄/xSnO₂ nanocomposites (x=0, 1, 5 wt%) have been successfully synthesized by one-pot reaction of urea-nitrate combustion method. The transmission electron microscope study reveals that the particle size of the as synthesized CuFe₂O₄ and CuFe₂O₄/5 wt%SnO₂ are 10 and 20 nm, respectively. The SnO₂ coating on the nanocrystalline CuFe₂O₄ was confirmed from HRTEM studies. The resultant products were sintered at 1100 °C and characterized by XRD and SQUID for compound formation and magnetic studies, respectively. The X-ray diffraction pattern shows the well-defined sharp peak that confirms the phase pure compound formation of tetragonal CuFe₂O₄. The zero field cooled (ZFC) and field cooled (FC) magnetization was performed using SQUID magnetometer from 2 to 350 K and the magnetic hysteresis measurement was carried out to study the magnetic properties of nanocomposites.     

Optical properties and deep levels in annealed Si1−xMnx bulk materials

The optical properties and the deep levels in bulk Si_1−xMn_x formed by using an implantation and annealing method were investigated. Transmission electron microscopy, X-ray diffraction, and Hall-effect measurements showed that the annealed bulk Si_1−xMn_x samples were p-type crystalline semiconductors. The photoluminescence spectra for the annealed bulk Si_1−xMn_x material showed luminescence peaks corresponding to excitons bound to neutral acceptors and related to dislocations due to the existence of Mn impurities. Deep-level transient spectroscopy results for the annealed bulk Si_1−xMn_x showed deep levels related to the interstitial and substitutial sites of the Mn⁺ ions. These results can help improve understanding of the optical properties and the deep levels in annealed bulk Si_1−xMn_x material.     

Formation mechanism of ferromagnetism in Si1−xMnx diluted magnetic semiconductors

Si_1−xMn_x diluted magnetic semiconductor (DMS) bulks were formed by using an implantation and annealing method. Energy dispersive X-ray fluorescence, transmission electron microscopy (TEM), and double-crystal rocking X-ray diffraction (DCRXD) measurements showed that the grown materials were Si_1−xMn_x crystalline bulks. Hall effect measurements showed that annealed Si_1−xMn_x bulks were p-type semiconductors. The magnetization curve as a function of the magnetic field clearly showed that the ferromagnetism in the annealed Si_1−xMn_x bulks originated from the interaction between interstitial and substitutional Mn⁺ ions, which was confirmed by the DCRXD measurements. The magnetization curve as a function of the temperature showed that the ferromagnetic transition temperature was approximately 75 K. The present results can help to improve understanding of the formation mechanism of ferromagnetism in Si_1−xMn_x DMS bulks.     

Magnetic interactions in Co-based alloy thin films

The interactions in ternary and quaternary Co-based alloy thin films for longitudinal recording media, with different thickness, are studied. The analysis is performed through the measurement of the initial magnetization and ordinary hysteresis curves. The interactions result stronger in quaternary than in ternary alloy films and when the film thickness is smaller. These findings are discussed in relationship with the evolution of the magnetization switching, characterized by a tendency towards a more coherent rotation of the magnetization in single-domain grains of thinnest and quaternary films, owing to the complex structure of these films. The impact of this evolution on the thermal stability of the magnetic properties is also discussed.     

Magnetic study of Mg0.95Mn0.05Fe2O4 ferrite nanoparticles

The magnetic properties of Mg_0.95Mn_0.05Fe₂O₄ ferrite samples with an average particle size of ∼6.0±0.6 nm have been studied using X-ray diffraction, Mössbauer spectroscopy, dc magnetization and frequency dependent real χ^′(T) and imaginary χ^″(T) parts of ac susceptibility measurements. A magnetic transition to an ordered state is observed at about 195 K from Mössbauer measurements. The zero-field-cooled (ZFC) and field-cooled (FC) magnetization have been recorded at low field and show the typical behavior of a small particle system. The ZFC curve displays a broad maximum at , a temperature which depends upon the distribution of particle volumes in the sample. The FC curve was nearly flat below , as compared with monotonically increasing characteristics of non-interacting superparamagnetic systems indicating the existence of strong interactions among the nanoparticles. A frequency-dependent peak observed in χ^′(T) is well described by Vogel-Fulcher law, yielding a relaxation time and an interaction parameter . Such values show the strong interactions and rule out the possibility of spin-glass (SG) features among the nanoparticle system. On the other hand fitting with the Néel-Brown model and the power law yields an unphysical large value of τ₀ (∼6×10⁻⁶⁹ and 1.2×10⁻²² s respectively).     

Magnetic ordering in CeMnCuSi2

Temperature and field-dependent magnetization measurements on polycrystalline CeMnCuSi₂ reveal that the Mn moments in this compound exhibit ordering with a ferromagnetic (FM) component ordered instead of the previously reported purely antiferromagnetic (AFM) ordering. The FM ordering temperature, T_c, is about 120 K and almost unchanged with external fields up to 50 kOe. Furthermore, an AFM component (such as in a canted spin structure) is observed to be present in this phase, and its orientation is modified rapidly by the external magnetic field. The Ce L₃-edge X-ray absorption result shows that the Ce ions in this compound are nearly trivalent, very similar to that in the heavy fermion system CeCu₂Si₂. Large thermomagnetic irreversibility is observed between the zero-field-cooled (ZFC) and field-cooled (FC) M(T) curves below T_c indicating strong magnetocrystalline anisotropy in the ordered phase. At 5 K, a metamagnetic-type transition is observed to occur at a critical field of about 8 kOe, and this critical field decreases with increasing temperature. The FM ordering of the Mn moments in CeMnCuSi₂ is consistent with the value of the intralayer Mn–Mn distance R^a_Mn–Mn=2.890 Å, which is greater than the critical value 2.865 Å for FM ordering. Finally, a magnetic phase diagram is constructed for CeMnCuSi₂.     

Structural and Magnetic Properties of Sm Implanted GaN

The structural and magnetic properties of Sm ion-implanted GaN with different Sm concentrations are investigated. XRD results do not show any peaks associated with second phase formation. Magnetic investigations performed by superconducting quantum interference device reveal ferromagnetic behavior with an ordering tem- perature above room temperature in all the implanted samples, while the effective magnetic moment per Sin obtained from saturation magnetization gives a much higher value than the atomic moment of Sm. These results could be explained by the phenomenological model proposed by Dhar et al. [Phys. Rev. Lett. 94（2005）037205, Phys. Rev. B 72（2005）245203] in terms of a long-range spin polarization of the GaN matrix by the Sm atoms.