Elaboration of self-organized magnetic nanoparticles by selective cobalt silicidation

Self-organized magnetic nanoparticles are obtained through selective silicidation of cobalt using a silicon substrate pre-structured with tri-dimensional gold islands as template. On the step bunches array of a vicinal Si(1 1 1) surface, gold deposition results in the formation of nanodroplets aligned along the step bunches. A subsequent cobalt deposition is performed onto this gold islands-covered Si surface, with two silicidation processes investigated: reactive deposition (RD) and solid phase reaction (SPR). The cobalt is converted into a non-magnetic silicide film except where the surface is locally masked by the gold islands, giving rise to cobalt nanomagnets which can be capped by a gold layer. A scanning tunneling microscopy comparative study of RD and SPR processes demonstrates that the former induces strong surface morphology changes while the latter preserves the pristine islands. Magnetic measurements performed with alternating gradient force magnetometry at room temperature are used to demonstrate the presence of ferromagnetic cobalt nanoparticles on SPR-processed samples. These nanomagnets show a clear in-plane anisotropy behavior.     

Spin polarization and charge transfer of Co nanoclusters coated with CO molecules

We have investigated magnetic properties of Co clusters coated with CO molecules by first-principles density functional calculations. Total magnetic moment of the system decreases with the increase of CO molecule concentration regardless of adsorption sites for CO molecules. Spin polarization slightly increases as CO molecules are adsorbed on the most stable sites of Co cluster, which is caused by the increased local spin polarization of p-electrons due to charge transfer from Co clusters to CO molecules.     

The spin-1 Ising model on a two-layer Bethe lattice with FM/AFM interactions

Two-layer Bethe lattice with the Ising spins of the top layer having only ferromagnetic (FM) interactions and the bottom layer having only antiferromagnetic (AFM) interactions are allowed to interact with the interlayer interaction of either FM or AFM type. The model is studied by using the exact recursion relations in a pairwise approach for given coordination numbers q=3, 4 and 6 with equal external magnetic fields acting on the layers. The phase diagrams of the model are obtained on different planes for given system parameters by studying the ground state (GS) phase diagrams and the thermal variations of the order-parameters and the response functions, i.e. the susceptibility and the specific heat, in detail. The model presents second- and first-order phase transitions, and where their lines are combined is the tricritical point. The critical end points also exist. The reentrant behavior is also seen when the model presents two Néel temperatures.     

Magnetic properties of a ferrimagnetic core/shell nanocube Ising model: A Monte Carlo simulation study

Monte Carlo simulation has been used to study the magnetic properties and hysteresis loops of a single nanocube, consisting of a ferromagnetic core of spin- surrounded by a ferromagnetic shell of spin-1 with antiferromagnetic interface coupling. We find a number of characteristic phenomena. In particular, the effects of the shell coupling and the interface coupling on both the compensation temperature and the magnetization profiles are investigated. The effects of the interface coupling on the hysteresis loops are also examined.     

The static and dynamic properties of PuCoGa5 and NpCoGa5 investigated by neutron scattering experiments

Neutron scattering results on single crystals shed light on the static and dynamic properties of the superconductor () PuCoGa₅ and its isostructural but antiferromagnetic () homologue NpCoGa₅. By polarized neutron diffraction the magnetization density in the paramagnetic state of both compounds has been inferred. The microscopic magnetization of NpCoGa₅ is consistent with the orbital and spin components of a localized Np³⁺ magnetic moment. In the case of PuCoGa₅ the microscopic magnetization is small, temperature-independent and cannot be described as a localized Pu³⁺ magnetic moment. For NpCoGa₅ a dynamic magnetic signal has been observed by three-axis spectroscopy in the antiferromagnetically ordered state. The magnetic signal is strongest at the antiferromagnetic zone center and an energy transfer of about 5 meV. Magnetic fluctuations persist at this position in the paramagnetic state. The dynamic response is similar to the dynamic response observed in other actinide intermetallic compounds. This supports the possibility that magnetic fluctuations could also be present in the paramagnetic superconductor PuCoGa₅.     

Josephson effect in supercondutor/ferromagnetic semiconductor/superconductor junctions

Using a general expression for dc Josephson current, we study the Josephson effect in ballistic superconductor (SC)/ferromagnetic semiconductor (FS)/SC junctions, in which the mismatches of the effective mass and Fermi velocity between the FS and SC, spin polarization P in the FS, as well as strengths of potential scattering Z at the interfaces are included. It is shown that in the coherent regime, the oscillatory dependences of the maximum Josephson current on the FS layer thickness L and Josephson current on the macroscopic phase difference φ for the heavy and light holes, resulting from the spin splitting energy gained or lost by a quasiparticle Andreev-reflected at the FS/SC interface, are much different due to the different mismatches in the effective mass and Fermi velocity between the FS and the SC, which is related to the crossovers between positive (0) and negative (π) couplings or equivalently 0 and π junctions. Also, we find that, for the same reason, Z and P are required not to surpass different critical values for the Josephson currents of the heavy and light holes. Furthermore, it is found that, for the dependence of the Josephson current on φ, regardless of how L,Z, and P change, the Josephson junctions do not transit between 0 and π junctions for the light hole.     

Optical and electrical characterizations of 4H-SiC-oxide interfaces by spectroscopic ellipsometry and capacitance-voltage measurements

4H-SiC-oxide interfaces formed by various oxidation methods on SiC (0 0 0 1) Si- and () C-face substrates have been characterized by performing spectroscopic ellipsometry in wide spectral region including deep UV spectral range and capacitance-voltage measurements. The results exhibit that the refractive indices of the interface layers well correlate with interface state density in all the cases of oxidation processes. To investigate the difference in interface characteristics between wet and dry oxidation, we compared to the sample fabricated by wet oxidation followed by heating in Ar or O₂ atmosphere, aiming to remove hydrogen related species at the interface. We also tried to make clear the difference in the interface characteristics between Si- and C-faces by lowering the oxidation rate of C-face down to those for Si-face. Putting together with all of the results obtained, we discuss the origins that determine the interface characteristics in terms of both the optical and electrical characterizations.     

Co-induced nano-structures on Si(1 1 1) surface

The interaction of cobalt atoms with silicon (1 1 1) surface has been investigated by means of scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED). Besides the Co silicide islands, we have successfully distinguished two inequivalent Co-induced reconstructions on Si(1 1 1) surface. Our high-resolution STM images provide some structural properties of the two different derived phases. Both of the two phases seem to form islands with single domain. The new findings will help us to understand the early stage of Co silicide formations.     

CoO under pressure from first principles

Density functional theory and the generalized gradient approximation with correction for Hubbard energy was used to study the behavior of cobaltous oxide (CoO) under pressure. CoO undergoes an insulator-metal transition which is accompanied by a magnetic collapse. The antiferromagnetic phase of CoO transforms to nonmagnetic phase with the 6-7% reduction in the fractional volume. The magnetic collapse and the energy band gap closure are driven by the lost of correlation which results from the delocalization of 3d electrons. Delocalization process is due to the band broadening with compression. The Hubbard energy influences the transitions pressure. The lower Hubbard terms result in the lower values of transition pressure. The evolution of magnetic moment, energy band gap, and the bandwidth versus increasing pressure is analyzed. The results of calculations are compared to the existing theoretical and experimental data.     

Properties of the Ising magnet confined in a corner geometry

The properties of Ising square lattices with nearest neighbor ferromagnetic exchange confined in a corner geometry, are studied by means of Monte Carlo simulations. Free boundary conditions at which boundary magnetic fields ±h are applied, i.e., at the two boundary rows ending at the lower left corner a field +h acts, while at the two boundary rows ending at the upper right corner a field −h acts. For temperatures T less than the critical temperature T_c of the bulk, this boundary condition leads to the formation of two domains with opposite orientation of the magnetization direction, separated by an interface which for T larger than the filling transition temperature T_f(h) runs from the upper left corner to the lower right corner, while for T<T_f(h) this interface is localized either close to the lower left corner or close to the upper right corner. It is shown that for T=T_f(h) the magnetization profile m(z) in the z-direction normal to the interface simply is linear and the interfacial width scales as w∝L, while for T>T_f(h) it scales as . The distribution P(?) of the interface position ? (measured along the z-direction from the corners) decays exponentially for T<T_f(h) from either corner, is essentially flat for T=T_f(h), and is a Gaussian centered at the middle of the diagonal for T>T_f(h). Unlike the findings for critical wetting in the thin film geometry of the Ising model, the Monte Carlo results for corner wetting are in very good agreement with the theoretical predictions.     

Spin asymmetry and s-electron itinerancy in Co/X (X=Co,Cu, V and Ta) multilayers: their dependence on the electronegativity of non-magnetic layers

The electronic structure and magnetic properties of the Co at the Co/X (X=Co, Cu, V and Ta) interfaces have been studied by first-principle discrete variational method. We have found that the spin asymmetry and the s-electron itinerancy of the Co interface layer in the Co/X systems are strongly dependent on the electronegativity of the non-magnetic layers. A large difference in the electronegativity between the non-magnetic and Co layers is unfavorable both for s-electron itinerancy and for the spin exchange split of DOS at the Fermi level. Further study on charge density has revealed that a bond is formed across the Co/V and Co/Ta interfaces.     

Chemically abrupt interface between Ce oxide and Fe films

A chemically abrupt Fe/Ce oxide interface can be formed by initial oxidation of an Fe film followed by deposition of Ce metal. Once a Ce oxide layer is formed on top of Fe, it acts a passivation barrier for oxygen diffusion. Further deposition of Ce metal followed by its oxidation preserve the abrupt interface between Ce oxide and Fe films. The Fe and Ce oxidation states have been monitored at each stage using X-ray photoelectron spectroscopy.     

Changes in the shapes of self-organized PbSe quantum dots during PbEuTe overgrowth investigated by anomalous X-ray diffraction

Anomalous X-ray diffraction was used for the investigation of shape and chemical composition of self-organized PbSe quantum dots covered by PbEuTe capping layers. From reciprocal-space maps of diffracted intensities measured at two energies of the primary radiation, we discriminated the contributions of the dot volumes and the surrounding crystal lattice to the diffracted intensity. We have found that the presence of Eu atoms suppresses the flattening of the dots during their overgrowth.     

Fe monolayers on InAs(0 0 1): An in situ study of surface, interface and volume magnetic anisotropy

The magnetic anisotropy of epitaxial Fe films with thicknesses in the range of 2-142 monolayers (ML) grown on {4×2} reconstructed InAs(0 0 1) was investigated by in situ ferromagnetic resonance. The easy magnetization direction was found to be parallel to the -direction for Fe films below 4 ML, while it rotates by 45^° toward the -direction. It is observed that both surface-interface and volume contribution to the perpendicular anisotropy favor an easy axis perpendicular to the film plane. The cubic surface-interface anisotropy is relatively large with easy axes along -directions in contrast to the volume contribution which favors easy axes along the -directions. The volume contribution is found to be larger than the Fe bulk cubic anisotropy. A thickness independent uniaxial anisotropy has been found in films with a thickness of 2 up to 142 ML.     

Atomic structure of CaF2/MnF2-Si(1 1 1) superlattices from X-ray diffraction

X-ray reflectivity and non-specular crystal truncation rod scans have been used to determine the three-dimensional atomic structure of the buried CaF₂-Si(1 1 1) interface and ultrathin films of MnF₂ and CaF₂ within a superlattice. We show that ultrathin films of MnF₂, below a critical thickness of approximately four monolayers, are crystalline, pseudomorphic, and adopt the fluorite structure of CaF₂. High temperature deposition of the CaF₂ buffer layer produces a fully reacted, CaF₂-Si(1 1 1) type-B interface. The mature, “long” interface is shown to consist of a partially occupied layer of CaF bonded to the Si substrate, followed by a distorted CaF layer. Our atomistic, semi-kinematical scattering method extends the slab reflectivity method by providing in-plane structural information.     

A half-moment model for radiative transfer in a 3D gray medium and its reduction to a moment model for hot, opaque sources

We present in this paper a new 3D half-moment model for radiative transfer in a gray medium, called the model, which uses maximum entropy closure. This model is a generalization to 3D of the 1D version recently proposed in (J. Comp. Phys. 180 (2002) 584). The direction space Ω is divided into two pieces, Ω⁺ and Ω^-, in a dynamical way by the plane perpendicular to the total radiative flux, and the half moments are defined from these subspaces. The model closure and the integrations of the radiative transfer equation performed on the moving Ω^± spaces are detailed. 1D planar results, which have motivated the extension of the model of (J. Comp. Phys. 180 (2002) 584) to multi-dimensions, are shown. These results are very good. The model is thereafter derived for 3D spherically symmetric geometry, where the correctness of the non-trivial border terms can be checked. Two 3D spherically symmetric problems are numerically solved in order to show the accuracy of the closure and the role of the border terms. Once again, compared to the solution obtained with a ray tracing solver, results are very good. From the 3D half-moment model, a new moment model, called , is derived for the particular case of a 3D hot and opaque source radiating into a cold medium, for applications such as simulations of stellar atmospheres and fires. Two-dimensional numerical results are presented and compared to those obtained solving the RTE and with other moment models. They demonstrate the very good accuracy of the model, its good convergence properties, and better prediction compared to all other existing moment models in its domain of applicability.     

Band alignments at SrZrO3/Ge(0 0 1) interface: Thermal annealing effects

High-κ dielectrics SrZrO₃ were prepared on Ge(0 0 1) substrate using pulse laser deposition, and band alignments and thermal annealing effects were studied with high resolution X-ray photoemission spectroscopy. Valence and conduction band offsets at this interface were measured to be 3.26 eV and 1.77 eV, respectively. Interfacial Ge oxide layers were found at the interface. After annealing at 600 °C, the interfacial Ge oxide layers were eliminated, and the valence band offset increased to 3.50 eV, but the amorphous SrZrO₃ became polycrystalline in the meantime.     

Spin accumulation in coupled quantum dots with ferromagnetic and superconducting electrodes

We theoretically investigate the spin accumulation in two parallel coupled quantum dots (QDs) with ferromagnetic and superconducting electrodes. Due to the ferromagnetic lead, the spin accumulation appears on the resonance of Andreev reflection. The spin accumulation in each of the two QDs can be controlled by the gate voltage. The sign of the spin accumulation is also controllable by tuning the bias. Furthermore, tuning the magnetic flux can exchange the amplitude of the spin accumulation in the two QDs. The Aharonov-Bohm oscillation effects also provides a way to control the spin accumulation of each QD.     

Quaternary metallic ferrimagnets based on antiferromagnetic semiconductor MnTe

We use an accurate full-potential density-functional method to systematically study MnTe-based quaternary magnetic compounds: Mn₆ZnAlTe₈, Mn₆ZnGaTe₈, Mn₆CdAlTe₈, and Mn₆CdGaTe₈. The co-substitution of group-II and group-III atoms for a quarter of Mn atoms changes the antiferromagnetic MnTe semiconductor into ferrimagnetic (FM) metal because the extra electron, introduced by the trivalent atom, as effective carrier makes Mn spins within nonmagnetic substitutional layers orient uniformly. Quite high spin polarization can be achieved for the electrons at the Fermi level in the co-substituted structures. This could make a novel approach to promising FM materials. The quaternary metallic ferrimagnets could have potential applications for spintronic devices.     

Damping of the domain walls motion in Co-based amorphous ribbons with helical magnetic anisotropy: Part III

The damping of the motion of domain walls of a sandwich domain structure by the eddy currents magnetic fields, the stray fields and the hysteresis friction fields is investigated. The blocking of the motion of domain walls by the eddy currents magnetic fields is discovered.