Understanding the high temperature oxidation and ignition behaviour of two-phase Mg–Nd alloys and a comparison to single phase Mg–Nd

The oxidation kinetics and the mechanism of two-phase Mg–Nd alloys were investigated via isothermal heating experiments conducted in dry air at 500 °C for 12 h. The oxidation kinetic curves reveal improved oxidation resistance on neodymium (Nd)-containing alloys compared to pure Mg. A lower mass gain was detected at 2.5-%Nd than at 6-Nd%, which was related to the lower amount of intermetallic phase on the alloy surface. The intermetallic phase has a significant effect on the oxide growth stage. Nd₂O₃ formation on the intermetallic phases creates diffusion paths for oxygen to the metal/oxide interface, affecting both the oxidation kinetics and the oxidation resistance of the alloys. The formation of a Nd-depleted region at the subsurface due to extensive Nd oxidation at the oxide/intermetallic interface lowers the protective ability of the oxide scale. As increasing the Nd content of binary Mg–Nd alloys above 0.5 wt% shifts the alloys from single-phase region to two-phase region, it adversely affects the ignition resistance.     

Co on thin Al2O3 films grown on Ni3Al(1 0 0)

The growth of Co on thin Al₂O₃ layers on Ni₃Al(1 0 0) was investigated by Auger electron spectroscopy, high resolution electron energy loss spectroscopy (EELS), and scanning tunneling microscopy. At 300 K, Co grows in three-dimensional clusters on top of the Al₂O₃ layer. A defect structure of the alumina layer plays a crucial role during the early stage of Co growth. After deposition of 10 Å of Co, a complete screening of the dipoles of the Al₂O₃ layer due to the Co film is found in the EELS measurements. Annealing the Co film reveals a process of coalescence of Co clusters and, above 700 K, diffusion of the Co atoms through the oxide film into the substrate takes place.     

X-ray photoelectron spectroscopic studies on oxidation behavior of nickel and iron aluminides under oxygen atmosphere at low pressures

Oxidation behaviors of NiAl, Ni₃Al, and FeAl under oxygen atmosphere at low pressures were studied by X-ray photoelectron spectroscopy (XPS). Clean surfaces of these aluminides were prepared by fracturing in an ultra high vacuum, and then the fractured surfaces were oxidized by exposing to high-purity oxygen at pressures up to 1.3 Pa without exposing to air. The oxides formed on NiAl and FeAl surfaces were Al₂O₃, whereas the oxide on Ni₃Al was NiAl₂O₄. Aluminum, nickel, and iron on clean surfaces were oxidized even at a pressure of 1.3 × 10⁻⁶ Pa. The oxidation evolves with an increase in the pressure of oxygen, and further oxidation of aluminum occurs prior to that of nickel or iron. The oxidation behaviors under such oxygen atmosphere were similar to those of the aluminides oxidized in air, and these behaviors could be predicted from thermodynamic consideration.     

Surface analysis and oxidation behavior of Y-ion implanted AZ31 magnesium alloys

AZ31 samples were implanted with yttrium ions with fluences of 5 × 10¹⁶, 1 × 10¹⁷ and 5 × 10¹⁷ ions/cm², using a metal vapor vacuum arc source at an extraction voltage of 45 kV. The surfaces of the implanted samples were then analyzed by Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). It was found that after treatment a pre-oxidation layer was formed, and the higher the fluence, the thicker the pre-oxidation layer was. The valence states showed that yttrium existed in the form of Y₂O₃. Isothermal oxidation tests have been conducted in pure oxygen at 773 K for 90 min to evaluate the oxidation behavior of the implanted samples. The results indicate that after implantation the oxidation resistance of the samples was significantly improved. Moreover, the greater the fluence, the better the oxidation resistance has been achieved. The characterization of the implanted layers after isothermal oxidation was examined by SEM, AES and XPS. From the results, it can be found that the thickness of the oxide scale formed on the implanted surfaces have been greatly decreased, and there is no obvious change for both the thickness of the pre-oxidation layer and the valence states of the elements after oxidation.     

Oxidation behavior and mechanism of powder metallurgy Rene95 nickel based superalloy between 800 and 1000 °C

The oxidation behaviors of powder metallurgy (PM) Rene95 Ni-based superalloy in the temperature range of 800-1000 °C are investigated in air by virtue of isothermal oxidation testing, X-ray diffraction, scanning electron microscopy and energy dispersive X-ray spectroscopy. The results show that the oxidation kinetics follows a square power law as the time extends at each temperature. The oxidation layers are detected to be composed of Cr₂O₃, TiO₂ and a small amount of NiCr₂O₄. The cross-sectional morphologies indicate that the oxidation layer consists of three parts: Cr-rich oxide layer, Cr and Ti duplex oxide layer, and oxidation affected zone. Theoretical analyses of oxidation kinetics and thicknesses of oxidation layers confirm that the activation energy of oxidation of PM Rene95 superalloy is 165.32 kJ mol⁻¹ and the oxidation process is controlled by diffusions of oxygen, Cr, and Ti. Accordingly, a diffusion-controlled mechanism is suggested to understand the oxidation behaviors of PM Rene95 superalloy at elevated temperatures.     

Yttrium ion implantation on the surface properties of magnesium

Owing to their excellent physical and mechanical properties, magnesium and its alloys are receiving more attention. However, their application has been limited to the high reactivity and the poor corrosion resistance. The aim of the study was to investigate the beneficial effects of ion-implanted yttrium using a MEVVA ion implanter on the surface properties of pure magnesium. Isothermal oxidation tests in pure O₂ at 673 and 773 K up to 90 min indicated that the oxidation resistance of magnesium had been significantly improved. Surface morphology of the oxide scale was analyzed using scanning electron microscope (SEM). Auger electron spectroscopy (AES) and X-ray diffraction (XRD) analyses indicated that the implanted layer was mainly composed of MgO and Y₂O₃, and the implanted layer with a duplex structure could decrease the inward diffusion of oxygen and reduce the outward diffusion of Mg²⁺, which led to improving the oxidation resistance of magnesium. Potentiodynamic polarization curves were used to evaluate the corrosion resistance of the implanted magnesium. The results show yttrium implantation could enhance the corrosion resistance of implanted magnesium compared with that of pure magnesium.     

Composition depth profiles of Bi3.15Nd0.85Ti3O12 thin films studied by X-ray photoelectron spectroscopy

In the present work, X-ray photoelectron spectroscopy (XPS) was used to investigate the composition depth profiles of Bi_3.15Nd_0.85Ti₃O₁₂ (BNT) ferroelectric thin film, which was prepared on Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrates by chemical solution deposition (CSD). It is shown that there are three distinct regions formed in BNT film, which are surface layer, bulk film and interface layer. The surface of film is found to consist of one outermost Bi-rich region. High resolution spectra of the O 1s peak in the surface can be decomposed into two components of metallic oxide oxygen and surface adsorbed oxygen. The distribution of component elements is nearly uniform within the bulk film. In the bulk film, high resolution XPS spectra of O 1s, Bi 4f, Nd 3d, Ti 2p are in agreement with the element chemical states of the BNT system. The interfacial layer is formed through the interdiffusion between the BNT film and Pt electrode. In addition, the Ar⁺-ion sputtering changes lots of Bi³⁺ ions into Bi⁰ due to weak Bi-O bond and high etching energy.     

Gadolinium oxide high-k gate dielectrics prepared by anodic oxidation

The growth and properties of gadolinium oxide (Gd₂O₃) films prepared by anodic oxidation were investigated. Uniform Gd₂O₃ thin film with good oxide quality was obtained. The X-ray diffraction (XRD) pattern of the Gd₂O₃ films showed that they had a poly-crystalline structure. The dielectric constants of Gd₂O₃ films oxidized at 30 and 60 V are 9.4 and 12.2, respectively. The equivalent oxide thickness (EOT) of the Gd₂O₃ stacked oxide is in the range of 5.8-9.4 nm. The MOS capacitor with Gd₂O₃ exhibits interesting electrical properties. Longer oxidation time reduced the leakage current density for 30 V anodic oxidation but increased the leakage current density for 60 V anodic oxidation. This work reveals that Gd₂O₃ could also be an alternative dielectric for Si substrate and therefore, might pave the way to fabricate CMOS devices in the future.     

In situ XPS study of Pd(1 1 1) oxidation. Part 1: 2D oxide formation in 10 mbar O2

The oxidation of the Pd(1 1 1) surface was studied by in situ XPS during heating and cooling in 3 × 10⁻³ mbar O₂. A number of adsorbed/dissolved oxygen species were identified by in situ XPS, such as the two dimensional surface oxide (Pd₅O₄), the supersaturated O_ads layer, dissolved oxygen and the R 12.2° surface structure.Exposure of the Pd(1 1 1) single crystal to 3 × 10⁻³ mbar O₂ at 425 K led to formation of the 2D oxide phase, which was in equilibrium with a supersaturated O_ads layer. The supersaturated O_ads layer was characterized by the O 1s core level peak at 530.37 eV. The 2D oxide, Pd₅O₄, was characterized by two O 1s components at 528.92 eV and 529.52 eV and by two oxygen-induced Pd 3d_5/2 components at 335.5 eV and 336.24 eV. During heating in 3 × 10⁻³ mbar O₂ the supersaturated O_ads layer disappeared whereas the fraction of the surface covered with the 2D oxide grew. The surface was completely covered with the 2D oxide between 600 K and 655 K. Depth profiling by photon energy variation confirmed the surface nature of the 2D oxide. The 2D oxide decomposed completely above 717 K. Diffusion of oxygen in the palladium bulk occurred at these temperatures. A substantial oxygen signal assigned to the dissolved species was detected even at 923 K. The dissolved oxygen was characterised by the O 1s core level peak at 528.98 eV. The “bulk” nature of the dissolved oxygen species was verified by depth profiling.During cooling in 3 × 10⁻³ mbar O₂, the oxidised Pd²⁺ species appeared at 788 K whereas the 2D oxide decomposed at 717 K during heating. The surface oxidised states exhibited an inverse hysteresis. The oxidised palladium state observed during cooling was assigned to a new oxide phase, probably the R 12.2° structure.     

The effect of Pt on Ni3Al surface oxidation at low-pressures

The fully-oxidized surface that forms on (1 1 1) oriented Ni₃Al single crystals, with and without Pt addition, at 300-900 K under oxygen pressures of ca. 10⁻⁷ Torr was studied using XPS, AES, and LEIS. Two main types of surfaces form, depending upon oxidation temperature. At low-temperature, the predominant oxide is NiO, capped by a thin layer of aluminum oxide, which we refer to generically as Al_xO_y. At high-temperature (i.e., 700-800 K), NiO is replaced by a thick layer of Al_xO_y. By comparing samples that contain 0, 10 and 20 at.% Pt in the bulk, we find that the effect of Pt is to: (1) reduce the maximum amount of both NiO and Al_xO_y; and (2) shift the establishment of the thick Al_xO_y layer to lower temperatures. Platinum also decreases the adsorption probability of oxygen on the clean surface.     

Effect of surface roughness on the development of protective Al2O3 on Fe-10Al (at.%) alloys containing 0-10 at.% Cr

The effect of alloy surface roughness, achieved by different degrees of surface polishing, on the development of protective alumina layer on Fe-10 at.% Al alloys containing 0, 5, and 10 at.% Cr was investigated during oxidation at 1000 °C in 0.1 MPa oxygen. For alloys that are not strong Al₂O₃ formers (Fe-10Al and Fe-5Cr-10Al), the rougher surfaces increased Fe incorporation into the overall surface layer. On the Fe-10Al, more iron oxides were formed in a uniform layer of mixed aluminum- and iron-oxides since the layer was thicker. On the Fe-5Cr-10Al, more iron-rich nodules developed on an otherwise thin Al₂O₃ surface layer. These nodules nucleated preferentially along surface scratch marks but not on alloy grain boundaries. For the strong Al₂O₃-forming Fe-10Cr-10Al alloy, protective alumina surface layers were observed regardless of the surface roughness. These results indicate that the formation of a protective Al₂O₃ layer on Fe-Cr-Al surfaces is not dictated by Al diffusion to the surface. More cold-worked surfaces caused an enhanced Fe diffusion, hence produced more Fe-rich oxides during the early stage of oxidation.     

Oxidation studies of niobium thin films at room temperature by X-ray reflectivity

We report the results of growth kinetics of oxidation process on niobium thin film surfaces exposed to air at room temperature by using a surface sensitive non-destructive X-ray reflectivity technique. The oxidation process follows a modified Cabrera-Mott model of thin films. We have shown that the oxide growth is limited by the internal field due to the contact potential which develops during the initial stage of oxidation. The calculated contact potential for 100 and 230 Å thick films is 0.81 ± 0.14 and 1.20 ± 0.11 V respectively. We report that 40% increase in the contact potential increases the growth rate for the first few mono layers of Nb₂O₅ from ∼2.18 to ∼2790 Å/s. The growth rates of oxidation on these samples become similar after the oxide thicknesses of ∼25 Å are reached. We report on the basis of our studies that a protective layer should be grown in situ to avoid oxidation of Nb thin film surface of Nb/Cu cavities.     

Adsorption and reaction of formaldehyde on thin-film cerium oxide

Formaldehyde adsorption and reaction have been studied on cerium oxide thin films that were vapor deposited on Ru(0 0 0 1). The formaldehyde behavior was examined as a function of temperature, exposure and Ce oxidation state. Formaldehyde chemisorbs on fully oxidized CeO₂ as dioxymethylene, CH₂O₂. The dioxymethylene decomposes and desorbs as formaldehyde between 200 K and 400 K. No other products are formed. On reduced ceria, formaldehyde also adsorbs as dioxymethylene. In addition to the formaldehyde desorption between 200 K and 400 K, a more strongly bound form of dioxymethylene is formed that produces formaldehyde at 440 K. Above 400 K, some of the dioxymethylene reacts to form formate and methoxy on the surface. These species decompose to produce H₂, CO and CH₂O above 500 K.     

Neutron powder diffraction study of the Nd(Ba1−xNdx)2Cu3O7+δ solid solution

The Nd(Ba_1−xNd_x)₂Cu₃O_7+δ solid solution, Nd123ss, has been investigated by neutron powder diffraction and Rietveld analysis. It is confirmed that the crystal structure of its Nd-rich limit, Nd(Ba_0.55Nd_0.45)₂Cu₃O_7.33, is satisfactorily described in the space group Bmmm (a=7.7679(3), b=3.8542(1), and c=22.9590(9) Å). The fourfold superstructure with respect to the orthorhombic cell of YBCO is due to ordering between Ba and Nd atoms in the bridging layer. Differences with previous works concern exclusively the distribution of O atoms in the ‘chain’ layer. Our results give strong indications that ordering also occurs for lower Nd contents.     

Effect of Nd concentration on structural and optical properties of Nd:Y2O3 transparent ceramic

Y₂O₃ transparent ceramics with different Nd concentration (0.1-7.0at%) were fabricated using ZrO₂ as additive. All the samples exhibit high transparency over a broad spectral region. The elements (Y, O and Nd) are uniformly distributed in the ceramic body, and the average grain size increases with Nd content. Based on the absorption spectrum, the Judd-Ofelt intensity parameters are calculated (Ω₂=4.364×10⁻²⁰ cm², Ω₄=3.609×10⁻²⁰ cm² and Ω₆=2.919×10⁻²⁰ cm²). The absorption coefficients increase linearly with Nd³⁺ doping concentration. The absorption cross-section at 804 nm and stimulated emission cross-section at 1078 nm are calculated to be 1.54×10⁻²⁰ and 7.24×10⁻²⁰ cm², respectively. All the emission bands exhibit the highest emission intensities with 1.0at% Nd³⁺ ion content, while the lifetime decreases dramatically from 321.5 μs (0.1at% Nd) to 17.9 μs (7.0at% Nd). According to the emission spectra and measured lifetime, the optimum doping concentration of Nd³⁺ ion in Y₂O₃ transparent ceramic might be around 1.0at%.     

Thermal and irradiation induced interdiffusion in magnetite thin films grown on magnesium oxide (0 0 1) substrates

Epitaxial Fe₃O₄(0 0 1) thin films (with a thickness in the range of 10-20 nm) grown on MgO substrates were characterized using low-energy electron diffraction (LEED), conversion electron Mössbauer spectroscopy (CEMS) and investigated using Rutherford backscattering spectrometry (RBS), channeling (RBS-C) experiments and X-ray reflectometry (XRR). The Mg out-diffusion from the MgO substrate into the film was observed for the directly-deposited Fe₃O₄/MgO(0 0 1) films. For the Fe₃O₄/Fe/MgO(0 0 1) films, the Mg diffusion was prevented by the Fe layer and the surface layer is always a pure Fe₃O₄ layer. Annealing and ion beam mixing induced a very large interface zone having a spinel and/or wustite formula in the Fe₃O₄-on-Fe film system.     

Effect of different alloyed layers on the high temperature oxidation behavior of newly developed Ti2AlNb-based alloys

The application of titanium aluminide orthorhombic alloys (O-phase alloys) as potential materials in aircraft and jet engines was limited by their poor oxidation resistance at high temperature. The Ti₂AlNb-based alloys were chromised (Cr), chromium-tungstened (Cr-W) and nickel-chromised (Ni-Cr) by the double glow plasma surface alloying process to improve their high temperature oxidation resistance. The discontinuous oxidative behavior of Cr, Cr-W and Ni-Cr alloyed layers on Ti₂AlNb-based alloy at 1093 K was explored in this study. After exposing at 1093 K, the TiO₂ layer was formed on the bare alloy and accompanied by the occurrence of crack, which promoted oxidation rate. The oxidation behavior of Ti₂AlNb-based alloys was improved by surface alloying due to the formation of protective Al₂O₃ scale or continuous and dense NiCr₂O₄ film. The Ni-Cr alloyed layer presented the best high-temperature oxidation resistance among three alloyed layers.     

Effect of substrate temperature on the surface and interface oxidation of NiTi thin films

NiTi shape memory alloy thin films are deposited on pure Cu substrate at substrate ambient temperatures of 300 °C and 450 °C. The surface and interface oxidation of NiTi thin films are characterized by X-ray photoelectron spectroscopy (XPS). After a subsequent annealing treatment the crystallization behavior of the films deposited on substrate at different temperatures is studied by X-ray diffraction (XRD). The effects of substrate temperature on the surface and interface oxidation of NiTi thin films are investigated. In the film surface this is an oxide layer composed of TiO₂. The Ni atom has not been detected on surface. In the film/substrate interface there is an oxide layer with a mixture Ti₂O₃ and NiO in the films deposited at substrate temperatures 300 °C and 450 °C. In the films deposited at ambient temperature, the interface layer contains Ti suboxides (TiO) and metallic Ni.     

Ultrathin ZrO2 films on Si-rich SiC(0 0 0 1)-(3 × 3): Growth and thermal stability

The growth and thermal stability of ultrathin ZrO₂ films on the Si-rich SiC(0 0 0 1)-(3 × 3) surface have been explored using photoelectron spectroscopy (PES) and X-ray absorption spectroscopy (XAS). The films were grown in situ by chemical vapor deposition using the zirconium tetra tert-butoxide (ZTB) precursor. The O 1s XAS results show that growth at 400 °C yields tetragonal ZrO₂. An interface is formed between the ZrO₂ film and the SiC substrate. The interface contains Si in several chemically different states. This gives evidence for an interface that is much more complex than that formed upon oxidation with O₂. Si in a 4+ oxidation state is detected in the near surface region. This shows that intermixing of SiO₂ and ZrO₂ occurs, possibly under the formation of silicate. The alignment of the ZrO₂ and SiC band edges is discussed based on core level and valence PES spectra. Subsequent annealing of a deposited film was performed in order to study the thermal stability of the system. Annealing to 800 °C does not lead to decomposition of the tetragonal ZrO₂ (t-ZrO₂) but changes are observed within the interface region. After annealing to 1000 °C a laterally heterogeneous layer has formed. The decomposition of the film leads to regions with t-ZrO₂ remnants, metallic Zr silicide and Si aggregates.     

Long-length IBAD-MgO buffer layers for high performance RE-123 coated conductors by a large ion beam source

In Fujikura, a large-scale ion-beam-assisted deposition (IBAD) system with a large ion source has been employed to fabricate biaxially textured MgO films. The large-scale IBAD system has multiple deposition lanes where substrate tapes move, and therefore we have to optimize experimental conditions at each lane. We selected an appropriate deposition area and, finally, we successfully fabricated a 1 km-length IBAD-MgO film at a production rate of 1 km/h. We also studied pulsed-laser-deposited (PLD) CeO₂ films directly on the IBAD-MgO films in spite of a large lattice mismatch between CeO₂ and MgO. From transmission electron microscope (TEM) observations at an interface between MgO and CeO₂ films, it is revealed that there is domain-matching-epitaxy relationship between MgO and CeO₂ films. We also fabricated thin (1.0 μm) and thick (3.7 μm) PLD – GdBa₂Cu₃O_7−x (GdBCO) film on the long-length CeO₂/MgO substrate (over 150 m). Critical currents (I_c) and current density (J_c) were over 300 A and 3 MA/cm² respectively for the thin GdBCO film and were about 645 A and 1.7 MA/cm² for the thick GdBCO film at 77 K in self-field.