Parametric analysis of the selective laser melting process

Selective laser sintering/melting (SLS/SLM) technology is used for manufacturing net-shaped objects from commercial Inox 904L powder with ≤20 μm particle size. Experiments were carried out on PHENIX-PM100 machine equipped with a 50 W cw fiber laser. Powder is layered by a roller over the surface of a 100 mm-diameter build cylinder. Optimal parameters of layer thickness and power input per unit speed for SLM were determined. It was shown that the greater the value of P/V ratio is, the larger is the remelted line (called as “vector”). Influence of the shifting of consecutive single vectors on the process of forming the first layer was studied. Different strategies for forming objects with less than 1 mm-sized inner structures were tested, as, for example, forming a 20 mm × 20 mm × 5 mm box with 140 μm-thick inner compartment walls.     

Simulation of dynamics of phase transitions in CdTe by pulsed laser irradiation

Numerical simulation of melting and solidification processes induced in CdTe by nanosecond radiation of ruby laser (λ = 694 nm, τ = 20 and 80 ns) and KrF excimer laser (λ = 248 nm, τ = 20 ns) taking into account components diffusion in melt and their evaporation from the surface has been carried out. Cd atoms evaporation has shown to essentially affect the dynamics of phase transitions in the near-surface region. Thus, in the case of the influence of ruby laser irradiation intensive surface cooling results in the formation of nonmonotone temperature profile with maximum temperature in semiconductor volume at the distance of ∼20 nm from the surface. The melt formed under the surface extends both to the surface and to the semiconductor volume as well. As a result of cadmium telluride components evaporation and diffusion in the melt the near-surface region is enriched with tellurium. The obtained melting threshold value of irradiation energy density is in a reasonable agreement with experimental data.     

Microstructure and corrosion behavior of austenitic stainless steel treated with laser

Surface modification of AISI316 stainless steel by laser melting was investigated experimentally using 2 and 4 kW laser power emitted from a continuous wave CO₂ laser at different specimen scanning speeds ranged from 300 to 1500 mm/min. Also, an investigation is reported of the introduction of carbon into the same material by means of laser surface alloying, which involves pre-coating the specimen surfaces with graphite powder followed by laser melting. The aim of these treatments is to enhance corrosion resistance by the rapid solidification associated with laser melting and also to increase surface hardness without affecting the bulk properties by increasing the carbon concentration near the surface. Different metallurgical techniques such as optical microscopy, scanning electron microscopy (SEM), and X-ray diffraction (XRD) were used to characterize the microstructure of the treated zone. The microstructures of the laser melted zones exhibited a dendritic morphology with a very fine scale with a slight increase in hardness from 200 to 230 Hv. However, the laser alloyed samples with carbon showed microstructure consisting of γ dendrite surrounded by a network of eutectic structures (γ+carbide). A significant increase in hardness from 200 to 500 Hv is obtained. Corrosion resistance was improved after laser melting, especially in the samples processed at high laser power (4 kW). There was shift in I_corr and E_corr toward more noble values and a lower passive current density than that of the untreated materials. These improvements in corrosion resistance were attributed to the fine and homogeneous dendritic structure, which was found throughout the melted zones. The corrosion resistance of the carburized sample was lower than the laser melted sample.     

Fiber laser annealing of nanocrystalline PZT thick film prepared by aerosol deposition

Nanocrystalline PZT thick films (1 mm square and over 10 μm thick) directly deposited onto stainless-steel substrates (PZT/SUS) by aerosol deposition (AD) technique and then annealed using focused laser beam with a fiber laser to suppress thermal damage to the back sides of the PZT/SUS and substrate near the film edge and to retain the dielectric and/or ferroelectric properties of the PZT/SUS. Compared with CO₂ laser annealing, fiber laser annealing suppressed thermal damage to the substrate. Compared with PZT/SUS annealed at 600 °C using an electric furnace, PZT/SUS annealed at 600 °C using a fiber laser showed superior properties, namely, dielectric constant ? > 1200 at a frequency of 100 Hz, remanent polarization P_r > 30 μC/cm², and coercive field strength E_c < 50 kV/cm at a frequency of 10 Hz. Furthermore, the grain growth for the PZT/SUS formed by AD technique and annealed by fiber laser irradiation was occurred within the laser spot size.     

Ablation characteristics of aluminum oxide and nitride ceramics during femtosecond laser micromachining

Femtosecond laser ablation of aluminum oxide (Al₂O₃) and aluminum nitride (AlN) ceramics was performed under normal atmospheric conditions (λ = 785 nm, τ_p = 185 fs, repetition rate = 1 kHz), and threshold laser fluencies for single- and multi-pulse ablation were determined. The ablation characteristics of the two ceramics showed similar trends except for surface morphologies, which revealed virtually no melting in Al₂O₃ but clear evidence of melting for AlN. Based on subsequent X-ray photoelectron spectroscopy (XPS) analyses, the chemistry of these ceramics appeared to remain the same before and after femtosecond laser ablation.     

LD end pumped, actively mode locked and passively Q-switched Nd:YAP laser at 1341 nm

An end pumped Nd:YAP laser at 1341 nm is actively mode locked and passively Q-switched. Pumping was done with a pulsed high power laser diode with maximum power 425 W. V³⁺:YAG with 61% initial transmission served as saturable absorber, and an acousto-optic modulator is used for active mode locking. The output pulse train with 69 ns duration has a total energy of 3.2 mJ with ±4% shot-to-shot fluctuation. The peak output energy of a single mode locked pulse is 0.25 mJ. The pulse duration of a single mode locked pulse is less than 800 ps. The output laser beam is nearly diffraction limited with 1.6 mm diameter, and beam propagation factor M² about 1.3.     

Laser synthesis of nitrides on the surface of refractory metals immersed in liquid nitrogen

In this paper we describe an approach for the formation of composite layers on the surface of refractory metals. We show that laser radiation on refractory metals (Ti, V, Zr, Mo, Hf, Ta, and W) immersed in liquid nitrogen can provide a chemical synthesis of nitride phases on the surface of metals. The metals were subjected to pulsed laser radiation with a wavelength of 1.06 μm. The power density ranged from 10⁴ to 10⁹ W cm⁻². The synthesis of nitrides began with the formation of Me_xN_y (x > y) phases with low contents of nitrogen. When the melting point was reached at the metal surface, the quantity of MeN phases increased sharply. Study of the melting zone showed that it contained a non-uniform distribution of nitride phases. The quantity of nitrides was a maximum on the surface and decreased with the increase of the depth of melting zone. Due to the high-cooling rates, titanium nitride crystallized in the form of columns. Maximum microhardness in the Ti surface layer was up to 20,000 MPa.     

Propagation characteristics of laser-induced stress wave in deep tissue for gene transfer

Propagation characteristics of laser-induced stress waves (LISWs) in tissue and their correlation with properties of gene transfection were investigated for targeted deep-tissue gene therapy. LISWs were generated by irradiating a laser-absorbing material with 532-nm Q-switched Nd:YAG laser pulses; a transparent plastic sheet was attached on the absorbing material for plasma confinement. Temporal pressure profiles of LISWs that were propagated through different thickness tissues were measured with a needle-type hydrophone and propagation of LISWs in water was visualized by shadowgraph technique. The measurements showed that at a laser fluence of 1.2 J/cm² with a laser spot diameter of 3 mm, flat wavefront was maintained for up to 5 mm in depth and peak pressure P decreased with increasing tissue thickness d; P was proportional to d^−0.54. Rat dorsal skin was injected with plasmid DNA coding for reporter gene, on which different numbers of excised skin(s) was/were placed, and LISWs were applied from the top of the skins. Efficient gene expression was observed in the skin under the 3 mm thick stacked skins, suggesting that deep-located tissue such as muscle can be transfected by transcutaneous application of LISWs.     

Effect of sintering temperature on structure and nonlinear dielectric properties of Ba0.6Sr0.4TiO3 ceramics prepared by the citrate method

Ba_0.6Sr_0.4TiO₃ ceramics were prepared by a citrate precursor method. The structure and nonlinear dielectric properties of the resulting ceramics were investigated within the sintering temperature range 1200-1300 °C. Adopting fine Ba_0.6Sr_0.4TiO₃ powder derived from the citrate method was confirmed to be effective in reducing the sintering temperatures required for densification. The ceramic specimens sintered at 1230-1280 °C presented relative densities of around 95%. A significant influence of sintering temperature on the microstructure and nonlinear dielectric properties was detected. The discrepancy in nonlinear dielectric behavior among the specimens sintered at different temperatures was qualitatively interpreted in terms of the dielectric response of polar micro-regions under bias electric field. The specimens sintered at 1230 and 1250 °C attained superior nonlinear dielectric properties, showing relatively low dielectric losses (tan δ) of 0.24% and 0.22% at 10 kHz together with comparatively large figure of merits (FOM) of 121 and 142 at 10 kHz and 20 kV/cm, respectively.     

Equation of state and thermal stability of Al3BC

The lattice parameters of Al₃BC have been measured up to 5 GPa at ambient temperature using energy-dispersive X-ray powder diffraction with synchrotron radiation. A fit to the experimental p-V data using Birch-Murnaghan equation of state gives values of the Al₃BC bulk modulus 116(4) GPa and its first pressure derivative 9(2). In the 1.6-4.8 GPa range at temperatures above 1700 K Al₃BC undergoes incongruent melting that results in the formation of Al₃BC₃, AlB₂ and liquid aluminum.     

Synthesis and characterization of a nano-scaled barium cerate perovskite powder using starch as polymerization agent

The preparation of nano-sized BaCeO₃ powder using starch as a polymerization agent is described herein. Phase evolution during the decomposition process of a (BaCe)-gel was monitored by XRD. A phase-pure nano-sized BaCeO₃ powder was obtained after calcining of the (BaCe)-gel at 920 °C. The resulting powder has a specific surface area of 15.4 m²/g. TEM investigations reveal particles mainly in the size range of 30 to 65 nm. The shrinkage and sintering behavior of resulting powder compacts were studied in comparison to a coarse-grained mixed-oxide BaCeO₃ powder (S_BET = 2.1 m²/g). Dilatometric measurements show that the beginning of shrinkage of compacts from the nano-sized powder is downshifted by 300 °C compared to mixed-oxide powder. Compacts from the nano-sized powder reach a relative density of 91% after sintering at 1450 °C for 10 h.     

Optical,thermal and mechanical characterization of Al(III)/Sb(III)-doped tris(thiourea)zinc(II) sulphate crystals

The influence of Al(III)/Sb(III)-doping on the properties of tris(thiourea)zinc(II) sulphate (ZTS) crystals grown by slow evaporation solution growth technique is reported. The as-grown crystals belong to orthorhombic system and cell parameters are, a = 7.77 Å, b = 11.13 Å, c = 15.47 Å, V = 1338 Å³ (Al(III)-doped) and a = 11.1996 Å, b = 7.770 Å, c = 15.5598 Å, V = 1368.3 Å³ (Sb(III)-doped). The structure and the crystallinity of the materials are further confirmed by powder X-ray diffraction analysis. The modes of vibrations of different functional groups present are identified by Fourier transform infrared studies. Thermogravimetric/differential thermal analysis studies reveal the purity of the materials and no decomposition is observed up to the melting point. Surface morphological changes due to doping are observed by scanning electron microscopy. Microhardness study was carried out to elucidate the mechanistic behavior microhardness studies were carried out to elucidate the mechanistic behavior. Second harmonic generation activity is much better in the case of Sb(III)-doping. The specimen is also characterized by dielectric studies.     

Trap-controlled behavior in ultrathin Lu2O3 high-k gate dielectrics

Amorphous Lu₂O₃ high-k gate dielectrics were grown directly on n-type (100) Si substrates by the pulsed laser deposition (PLD) technique. High-resolution transmission electron microscope (HRTEM) observation illustrated that the Lu₂O₃ film has amorphous structure and the interface with Si substrate is free from amorphous SiO₂. An equivalent oxide thickness (EOT) of 1.1 nm with a leakage current density of 2.6×10⁻⁵ A/cm² at 1 V accumulation bias was obtained for 4.5 nm thick Lu₂O₃ thin film deposited at room temperature followed by post-deposition anneal (PDA) at 600 °C in oxygen ambient. The effects of PDA process and light illumination were studied by capacitance-voltage (C-V) and current density-voltage (J-V) measurements. It was proposed that the net fixed charge density and leakage current density could be altered significantly depending on the post-annealing conditions and the capability of traps to trap and release charges.     

Nanosecond pulse laser melting investigation by IR radiometry and reflection-based methods

Experimental system for nanosecond laser melting investigation was developed containing three independent noncontact methods: infrared radiometry, time-resolved reflectivity of He-Ne laser and sample surface reflected KrF heating laser pulse. The system was applied to the investigation of laser melting of Cu, Mo, Ni, Si, Sn, Ti, steel ?SN 15330 and stainless steel ?SN 17246 samples. For metallic samples the IR radiometry signal was transformed to temperature. Obtained surface temperature and reflectivity spectra in nanosecond time scale (10-1000 ns) for wide range of energy densities (100-5500 mJ cm⁻²) are presented. Interesting evolutions were found. Melting thresholds and melting durations were determined from the measured curves. The applicability of the methods is evaluated.     

Effect of the oxidation process on SiO2/4H-SiC interface electrical characteristics

In this work we have compared the SiO₂/SiC interface electrical characteristics for three different oxidations processes (dry oxygen, water-containing oxygen and water-containing nitrogen atmospheres). MOS structures were fabricated on 8° off-axis 4H-SiC(0 0 0 1) n- and p-type epi-wafers. Electrical characteristics were obtained by I-V measurements, high-frequency capacitance-voltage (C-V) and ac conductance (G-ω) methods. Comparing the results, one observes remarkable differences between samples which underwent different oxidation routes. Among the MOS structures analyzed, the sample which underwent wet oxidation with oxygen as carrier gas presented the higher dielectric strength and lower values of interface states density.     

NiO+YSZ anode substrate for screen-printing fabrication of YSZ electrolyte film in solid oxide fuel cell

Anode substrate has a great effect on screen-printing fabrication of yttria-stabilized zirconia (YSZ) electrolyte film and cell performance. In this work, NiO+YSZ anode substrate was prepared by a conventional ceramic sintering method, on which dense YSZ electrolyte film was successfully fabricated by screen-printing method. Microstructure of the anode substrate and cell performance were investigated. The optimal amount of addition of starch to the anode substrate was 20 wt%. The optimal temperature for pre-sintering of NiO powder was 800 °C. A single cell with the NiO powder pre-sintered at 800 °C exhibited the highest power density of 0.95 W cm⁻² at 700 °C.     

Nanostructures on SiC surface created by laser microablation

Silicon carbide (SiC), as it is well-known, is inaccessible to usual methods of technological processing. Consequently, it is important to search for alternative technologies of processing SiC, including laser processing, and to study the accompanying physical processes. The work deals with the investigation of pulsed laser radiation influence on the surface of 6H-SiC crystal. The calculated temperature profile of SiC under laser irradiation is shown. Structural changes in surface and near-surface layers of SiC were studied by atomic force microscopy images, photoluminescence, Raman spectra and field emission current-voltage characteristics of initial and irradiated surfaces. It is shown that the cone-shaped nanostructures with typical dimension of 100-200 nm height and 5-10 nm width at the edge are formed on SiC surface under nitrogen laser exposure (λ = 0.337 μm, t_p = 7 ns, E_p = 1.5 mJ). The average values of threshold energy density 〈W_thn〉 at which formation of nanostructures starts on the 0 0 0 1 and surfaces of n-type 6H-SiC(N), nitrogen concentration n_N ≅ 2 × 10¹⁸ cm⁻³, are determined to be 3.5 J/cm² and 3.0 J/cm², respectively. The field emission appeared only after laser irradiation of the surface at threshold voltage of 1000 V at currents from 0.7 μA to 0.7 mA. The main role of the thermogradient effect in the processes of mass transfer in prior to ablation stages of nanostructure formation under UV laser irradiation (LI) was determined. We ascertained that the residual tensile stresses appear on SiC surface as a result of laser microablation. The nanostructures obtained could be applied in the field of sensor and emitting extreme electronic devices.     

High-resolution scanning tunneling microscopy and dI/dV map studies of peptidenucleic acid and fluorescein isothiocyanate

We used scanning tunneling microscopy (STM) to spatially map the local density of states of individual PNA molecules labeled with fluorescein isothiocyanate (FITC) on a Cu(1 1 1) surface. From the observed bias voltage dependences of the topographic height and the dI/dV map of FITC and individual PNA molecules, we confirmed that FITC and PNA have different electrical properties. We clearly differentiated the FITC and PNA molecules by mapping the density of states feature. This study shows that STM with the dI/dV map method is useful in FITC mapping.     

Study on the electrochemical behavior of vanadium nitride as a promising supercapacitor material

Vanadium nitride (VN) powder was synthesized by calcining V₂O₅ xerogel in a furnace under an anhydrous NH₃ atmosphere at 400 °C. The structure and surface morphology of the obtained VN powder were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The supercapacitive behavior of VN in 1 M KOH electrolyte was studied by means of cyclic voltammetry (CV), constant current charge-discharge cycling (CD) and electrochemical impedance spectroscopy (EIS). The XRD result indicates that the obtained VN belongs to the cubic crystal system (Fm3m [2 2 5]) with unit-cell parameter 4.15 Å. SEM images show the homogeneous surface of the obtained VN. The CV diagrams illustrate the existence of fast and reversible redox reactions on the surface of VN electrode. The specific capacitance of VN is 161 F g⁻¹ at 30 mV s⁻¹. Furthermore, the specific capacitance remains 70% of the original value when the scan rate increases from 30 to 300 mV s⁻¹. CD experiments show that VN is suitable for CD at high current density, and the slow and irreversible faradic reactions exist during the charge-discharge process of the VN electrode. The experimental results indicate that VN is a promising electrode material for electrochemical supercapacitors.     

Effect of zinc concentration on the structural,electrical and magnetic properties of mixed Mn–Zn and Ni–Zn ferrites synthesized by the citrate precursor technique

Mixed manganese-zinc and nickel-zinc ferrites of composition Mn_0.2Ni_0.8−xZn_xFe₂O₄ where x=0.4$x=0.4$, 0.5 and 0.6 have been synthesized by the citrate precursor technique. Decomposition of the precursor at temperatures as low as 500 °C gives the ferrite powder. The ferrites have been investigated for their electrical and magnetic properties such as saturation magnetization, initial permeability, Curie temperature, AC-resistivity and dielectric constant as a function of sintering temperature and zinc content. Structural properties such as lattice parameter, grain size and density are also studied. The mixed compositions exhibited higher saturation magnetizations at sintering temperatures as low as 1200 °C. While the Curie temperature decreased with zinc content, the permeability was found to increase. The AC-resistivity ranged from 10⁵–10⁷ Ω cm and decreased with zinc content and sintering temperature. The dielectric constants were lower than those normally reported for the Mn–Zn ferrites. Samples sintered at 1400 °C densified to about 94% of the theoretical density and the grain size was of the order of about 1.5 μm for the samples sintered at 1200 °C and increased subsequently with sintering temperature.