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1.
Silicon carbide (SiC), as it is well-known, is inaccessible to usual methods of technological processing. Consequently, it is important to search for alternative technologies of processing SiC, including laser processing, and to study the accompanying physical processes. The work deals with the investigation of pulsed laser radiation influence on the surface of 6H-SiC crystal. The calculated temperature profile of SiC under laser irradiation is shown. Structural changes in surface and near-surface layers of SiC were studied by atomic force microscopy images, photoluminescence, Raman spectra and field emission current-voltage characteristics of initial and irradiated surfaces. It is shown that the cone-shaped nanostructures with typical dimension of 100-200 nm height and 5-10 nm width at the edge are formed on SiC surface under nitrogen laser exposure (λ = 0.337 μm, tp = 7 ns, Ep = 1.5 mJ). The average values of threshold energy density 〈Wthn〉 at which formation of nanostructures starts on the 0 0 0 1 and surfaces of n-type 6H-SiC(N), nitrogen concentration nN ≅ 2 × 1018 cm−3, are determined to be 3.5 J/cm2 and 3.0 J/cm2, respectively. The field emission appeared only after laser irradiation of the surface at threshold voltage of 1000 V at currents from 0.7 μA to 0.7 mA. The main role of the thermogradient effect in the processes of mass transfer in prior to ablation stages of nanostructure formation under UV laser irradiation (LI) was determined. We ascertained that the residual tensile stresses appear on SiC surface as a result of laser microablation. The nanostructures obtained could be applied in the field of sensor and emitting extreme electronic devices.  相似文献   

2.
We report the effect of substrate temperature (Tsub) in the range 300-900 K on the surface roughness of silicon wafer resulted from femtosecond laser ablation. The surface roughness observed at the laser fluences less then 0.3 J/cm2 increases with increasing Tsub. However, the surface roughness decreases with increasing Tsub for the laser fluences between 0.5 and 1.0 J/cm2. If the laser fluence is higher than 2.0 J/cm2, the surface roughness is independent of Tsub. The effect of Tsub on the surface roughness can be understood in terms of the temperature dependence of optical absorption coefficient of silicon substrate, which eventually alters a mechanism underlying the fs-laser-material ablation process between optical penetration and thermal diffusion processes.  相似文献   

3.
Nanoparticles (NPs) were produced by ablating tungsten and boron-carbide (B4C) target materials in atmospheric pressure nitrogen ambient using ArF excimer laser pulses. The size distributions of the NPs formed during the ablation were monitored—within a 7-133 nm size window—by a condensation particle counter connected to a differential mobility analyzer. The laser repetition rate was varied between 1-50 Hz, and the fluence was systematically changed in the range of 0.5-15 J/cm2, for both materials, allowing a comparative study in an extended laser parameter regime. The multishot ablation threshold (Φth) of B4C was determined to be ∼1.9 J/cm2 for the laser used (ArF excimer, λ = 193 nm). Similarly to earlier studies, it was shown that the size distributions consist of mainly small nanoparticles (<∼20 nm) attributed to a non-thermal ablation mechanism below Φth. An additional broad peak appears (between 20 and 40 nm) above Φth as a consequence of the thermally induced macroscopic ablation. Chemical composition of deposited polydisperse nanoparticles was studied by X-ray photoelectron spectroscopy showing nitrogen incorporation into the boron-carbide.  相似文献   

4.
H. Chen  X. Chen  Y. Zhang  Y. Xia 《Laser Physics》2007,17(12):1378-1381
We present results on the surface-damage threshold of lithium niobate after single-and multiple-femtosecond laser pulse irradiation at the pulse duration of 80 fs, with a 800-nm wavelength, and a repetition rate of 1 kHz. The surface-ablation threshold was found to decrease significantly with an increase in the pulse number applied to the surface until reaching an almost constant level due to an incubation effect, which is attributed to the laser-induced defect formation. The threshold of lithium niobate under a single shot is found to be 2.82 J/cm2, and the threshold fluence for an infinite number of pulses F th(∞) converges to a common value of 0.52 ± 0.06 J/cm2 for N > 80. The results have the potential for application in laser micromachining and the fabrication of related optical devices and applications in frequency conversion by a femtosecond laser in lithium niobate.  相似文献   

5.
Laser fluence, repetition rate and pulse duration effects on paint ablation   总被引:1,自引:0,他引:1  
The efficiency (mm3/(J pulse)) of laser ablation of paint was investigated with nanosecond pulsed Nd:YAG lasers (λ = 532 nm) as a function of the following laser beam parameters: pulse repetition rate (1-10,000 Hz), laser fluence (0.1-5 J/cm2) and pulse duration (5 ns and 100 ns). In our study, the best ablation efficiency (η ≅ 0.3 mm3/J) was obtained with the highest repetition rate (10 kHz) at the fluence F = 1.5 J/cm2. This ablation efficiency can be associated with heat accumulation at high repetition rate, which leads to the ablation threshold decrease. Despite the low thermal diffusivity and the low optical absorption of the paint (thermal confinement regime), the ablation threshold fluence was found to depend on the pulse duration. At high laser fluence, the ablation efficiency was lower for 5 ns pulse duration than for the one of 100 ns. This difference in efficiency is probably due to a high absorption of the laser beam by the ejected matter or the plasma at high laser intensity. Accumulation of particles at high repetition rate laser ablation and surface shielding was studied by high speed imaging.  相似文献   

6.
We present the first measurement on the resonantly enhanced three-photon excitation spectra of natural lithium using a Nd:YAG laser pumped dye laser in conjunction with a thermionic diode ion detector. Exploiting the linear and circular polarizations, the n2P3/2(8 ? n ? 11) and nf  2F7/2 (8 ? n ? 38) series have been observed via three-photon excitation from the ground state. The measured level energies reveal a dynamic shift from calculated values, which increases with an increase of the principal quantum number n. The ac stark shift and line broadening mechanisms are studied as a function of laser intensity. It is noted that the width increases and the line center shifts towards the higher energy side as the laser intensity is increased. The maximum observed shift for the 12f 2F7/2 line is 0.33 cm−1 corresponding to the laser intensity variation from 1.34 × 1012 W/m2 to 1.03 × 1013 W/m2, whereas its width increases from 0.36 cm−1 to 0.82 cm−1.  相似文献   

7.
The surface modification of Cd1−xMnxTe (x = 0-0.3) crystal wafers under pulsed laser irradiation has been studied. The samples were irradiated by a Q-switched ruby laser with pulse duration of 80 ns. Optical diagnostics of laser-induced thermal processes were carried out by means of time-resolved reflectivity measurements at wavelengths 0.53 and 1.06 μm. Laser irradiation energy density, E varied in the range of 0.1-0.6 J/cm2. Morphology of irradiated surface was studied using scanning electron microscopy. The energy density whereby the sample surface starts to melt, depends on Mn content and is equal to 0.12-0.14 J/cm2 for x ≤ 0.2, in the case of x = 0.3 this value is about 0.35 J/cm2. The higher Mn content leads to higher melt duration. The morphology of laser irradiated surface changes from a weakly modified surface to a single crystal strained one, with an increase in E. Under irradiation with E in the range of 0.21-0.25 J/cm2, the oriented filamentary crystallization is observed. The Te inclusions on the surface are revealed after the irradiation of samples with small content of Mn.  相似文献   

8.
Femtosecond pulsed laser ablation (τ = 120 fs, λ = 800 nm, repetition rate = 1 kHz) of thin diamond-like carbon (DLC) films on silicon was conducted in air using a direct focusing technique for estimating ablation threshold and investigating the influence of ablation parameter on the morphological features of ablated regions. The single-pulse ablation threshold estimated by two different methods were ?th(1) = 2.43 and 2.51 J/cm2. The morphological changes were evaluated by means of scanning electron microscopy. A comparison with picosecond pulsed laser ablation shows lower threshold and reduced collateral thermal damage.  相似文献   

9.
Millimeter-long filaments and accompanying luminous plasma and defect channels created in fused silica (FS) by single focused femtosecond laser pulses with supercritical powers were probed in situ using optical imaging and contact ultrasonic techniques. Above the threshold pulse energy Eopt = 5 μJ corresponding to a few megawatt power levels pulses collapse due to self-focusing, producing channels filled by electron-hole plasma and luminescent defects, and exhibits predominantly compressive pressure transients. Analysis of the optical and ultrasonic response versus the laser pulse energy suggests that filamentary pulse propagation in the channels occurs with considerable dissipation of about ∼10 cm−1. The predominant ionization mechanism is most likely associated with avalanche ionization, while the main mechanism of optical absorption is free-carrier absorption via inverse Bremsstrahlung interaction with the polar lattice.  相似文献   

10.
We investigate laser pulse influence on aluminum target in irradiance range 109 to 1016 W/cm2, pulse duration between 10−8 and 10−15 s, Gaussian time profile with wavelength of 0.8 μm. For all computations energy density was 10 J/cm2. Plasma in the evaporated material is generated at the energy density above 10 J/cm2as the modeling showed.Long and short laser pulses distinguish by the mechanisms of energy transformation. For short laser pulses there is volumetric energy absorption, together with rapid phase transitions it lead to overheating in solid and liquid states, overheated solid temperature rises up to (6-8)Tm. Under influence of the energy saved in overheated solid, duration of the phase transitions becomes nanosecond, which is several orders of magnitude longer than laser pulse.  相似文献   

11.
We applied the resonant two-photon ionization and mass-analyzed threshold ionization spectroscopic techniques to record the vibronic and cation spectra of m-chloroaniline. The band origin of the first electronic transition was found to be 33 658 ± 2 cm−1, whereas the adiabatic ionization energy was determined to be 63 958 ± 5 cm−1. Within our experimental detection limit, these measured values are the same for both of the 35Cl and 37Cl isotopomers. The observed active modes of this molecule in the electronically excited S1 and cationic ground D0 states mainly involve the in-plane ring deformation and substituent-sensitive bending vibrations.  相似文献   

12.
Single- and multi-shot ablation thresholds of gold films in the thickness range of 31-1400 nm were determined employing a Ti:sapphire laser delivering pulses of 28 fs duration, 793 nm center wavelength at 1 kHz repetition rate. The gold layers were deposited on BK7 glass by an electron beam evaporation process and characterized by atomic force microscopy and ellipsometry. A linear dependence of the ablation threshold fluence Fth on the layer thickness d was found for d ≤ 180 nm. If a film thickness of about 180 nm was reached, the damage threshold remained constant at its bulk value. For different numbers of pulses per spot (N-on-1), bulk damage thresholds of ∼0.7 J cm−2 (1-on-1), 0.5 J cm−2 (10-on-1), 0.4 J cm−2 (100-on-1), 0.25 J cm−2 (1000-on-1), and 0.2 J cm−2 (10000-on-1) were obtained experimentally indicating an incubation behavior. A characteristic layer thickness of Lc ≈ 180 nm can be defined which is a measure for the heat penetration depth within the electron gas before electron-phonon relaxation occurs. Lc is by more than an order of magnitude larger than the optical absorption length of α−1 ≈ 12 nm at 793 nm wavelength.  相似文献   

13.
Poly(dimethylsiloxane) (PDMS) has been irradiated with a frequency quadrupled Nd:YAG laser and a KrF*-excimer laser at a repetition rate of 1 Hz. The analysis of ablation depth versus pulse number data reveals a pronounced incubation behavior. The thresholds of ablation (266 nm: 210 mJ cm−2, 248 nm: 940 mJ cm−2) and the corresponding effective absorption coefficients αeff (266 nm: 48900 cm−1, 248 nm: 32700 cm−1, αlin = 2 cm−1) were determined. The significant differences in the ablation thresholds for both irradiation wavelengths are probably due to the different pulse lengths of both lasers. Since the shorter pulse length yields a lower ablation threshold, the observed incubation can be due to a thermally induced and/or a multi-photon absorption processes of the material or impurities in the polymer.Incubation of polymers is normally related to changes of the chemical structure of the polymer. In the case of PDMS, incubation is associated with local chemical transformations up to several hundred micrometers below the polymer surface. It is possible to study these local chemical transformations by confocal Raman microscopy, because PDMS is transparent in the visible. The domains of transformation consist of carbon and silicon, as indicated by the appearance of the carbon D- and G-bands between 1310 and 1610 cm−1, a band appearing between 502 and 520 cm−1 can be assigned to mono- and/or polycrystalline silicon.The ablation products, which are detected in the surroundings of the ablation crater consist of carbon and amorphous SiOx (x ≈ 1.5) as detected by infrared spectroscopy.  相似文献   

14.
Femtosecond surface structure modifications are investigated under irradiation with laser pulses of 150 fs at 800 nm, on copper and silicon. We report sub-wavelength periodic structures formation (ripples) with a periodicity of 500 nm for both materials. These ripples are perpendicular to the laser polarization and can be obtained with only one pulse. The formation of these ripples corresponds to a fluence threshold of 1 J/cm2 for copper and 0.15 J/cm2 for silicon. We find several morphologies when more pulses are applied: larger ripples parallel to the polarization are formed with a periodicity of 1 μm and degenerate into a worm-like morphology with a higher number of pulses. In addition, walls of deep holes also show sub-wavelength and large ripples.  相似文献   

15.
Polarized second harmonic measurements are used to determine the in- and out-of plane orientations of molecular dipoles in optical active, elongated, surface bound nanoaggregates. As a specific example, nonlinear optical active nanofibers grown from CNHP4 molecular dipoles on muscovite mica are investigated. The orientation of the dipoles relative to the substrate is found to be 7 ± 5°, whereas that of the dipoles relative to the long nanofiber axes is ± 13 ± 5°. Following 780 nm femtosecond laser excitation, the two photon action potential ησ2 for CNHP4 is determined to be 4.7 × 10−54 cm4 s/photon. For comparison, ησ2 for para-hexaphenylene nanofibers is measured to be 12 × 10−54 cm4 s/photon.  相似文献   

16.
We present new data on the even-parity Rydberg states of atomic thallium using two-step three-photon laser excitation technique in conjunction with a thermionic diode ion detector. Atoms are excited from the 6p 2P1/2 ground state to the 7p 2P1/2 intermediate state via two-photon excitation and subsequently promoted to the high lying ns 2 S1/2 and nd 2D3/2 Rydberg states. The first ionization potential of thallium is determined as 49,266.66(1) cm-1 using data for the ns 2 S1/2 (25 ≤ n ≤ 54) and nd 2D3/2 (24 ≤ n ≤ 65) Rydberg series. This value is believed to be more accurate because the contribution due to the hyperfine structure splitting of the 7p 2P1/2 state (0.07185 cm-1) is much smaller as compared to that of the 6p 2P1/2 ground state (0.711 cm-1).  相似文献   

17.
In most laser material processing, material removal by different mechanisms is involved. Here, application of acoustic signals with thermoelastic (below threshold) and breakdown origin (above threshold) together with plasma plume analysis as a simple monitoring system of interaction process is suggested. In this research the interaction of pulse CO2 laser with 200 ns duration and maximum energy of 1.3 J operating at 1 Hz with austenitic stainless steel (316-L) is reported. The results showed that the non-linear point of the curve can serve as a useful indicator of melting fluence threshold (in this case ≈830 J cm−2) with corresponding temperature calculated using plasma plume analysis. Higher acoustic amplitudes and larger plasma plume volume indicates more intense interaction. Also, analysis showed that a phase explosion process with material removal (ejecta) in the form of non-adiabatic (i.e., dt ? α−1) is at play after laser pulse is ended. Also, SEM photographs show different surface quality medication at different laser intensities, which indicates the importance of recoil momentum pressure and possibly electrons and ions densities in heat transfer. Finally, electrochemical test indicate an improved corrosion resistance for laser treated samples compared to untreated ones.  相似文献   

18.
In this paper the surface topography of titanium samples irradiated by femtosecond laser pulses is described. When the fluence is about 0.5 J/cm2 periodic ripples with a period of about 700 nm are formed. For fluences between 0.5 and 2 J/cm2, a microcolumnar surface texture develops in the center of the irradiated spots and ripples are formed in the periphery of the spots. When experiments are performed with a non-stationary sample, the microcolumns exhibit ripples similar to those observed when the radiation fluence is about 0.5 J/cm2 and in the outer regions of the irradiated areas for fluences between 0.5 and 2 J/cm2. Since the energy distribution in the transverse cross-section of the laser beam is Gaussian, we conclude that the ripples form when the microcolumns are subjected to fluences near the melting threshold of the material at the trailing edge of the moving laser beam.  相似文献   

19.
We report the formation of directionally ordered nano-scale surface domains on the +z face of undoped congruent lithium niobate single crystals by using UV illumination through a phase mask of sub-micron periodicity with an energy fluence between ∼90 mJ/cm2 and 150 mJ/cm2 at λ = 266 nm. We clearly show here that the UV-induced surface ferroelectric domains only nucleate at and propagate along maxima of laser intensity. Although the domain line separation varies and is greater than 2 μm for this set of experimental conditions, this enables a degree of control over the all-optical poling process.  相似文献   

20.
The effect of laser ablation on copper foil irradiated by a short 30 ns laser pulse was investigated by X-ray photoelectron spectroscopy. The laser fluence was varied from 8 to 16.5 J/cm2 and the velocity of the laser beam from 10 to 100 mm/s. This range of laser fluence is characterized by a different intensity of laser ablation. The experiments were done in two kinds of ambient atmosphere: air and argon jet gas.The chemical state and composition of the irradiated copper surface were determined using the modified Auger parameter (α′) and O/Cu intensity ratio. The ablation atmosphere was found to influence the size and chemical state of the copper particles deposited from the vapor plume. During irradiation in air atmosphere the copper nanoparticles react with oxygen and water vapor from the air and are deposited in the form of a CuO and Cu(OH)2 thin film. In argon atmosphere the processed copper surface is oxidized after exposure to air.  相似文献   

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