Characterization of Cr/6H-SiC(0 0 0 1) nano-contacts by current-sensing AFM

The electrical properties and interface chemistry of Cr/6H-SiC(0 0 0 1) contacts have been studied by current-sensing atomic force microscopy (CS-AFM) and X-ray photoelectron spectroscopy (XPS). Cr layers were vapor deposited under ultrahigh vacuum onto both ex situ etched in H₂ and in situ Ar⁺ ion-bombarded samples. The Cr/SiC contacts are electrically non-uniform. Both the measured I-V characteristics and the modeling calculations enabled to estimate changes of the Schottky barrier height caused by Ar⁺ bombardment. Formation of ohmic nano-contacts on Ar⁺-bombarded surfaces was observed.     

Electron energy loss spectra from polycrystalline Cr and Cr2O3 before and after surface reduction by Ar bombardment

Electron energy loss spectra (ELS) have been obtained from polycrystalline Cr and Cr₂O₃ before and after surface reduction by 2 keV Ar⁺ bombardment. The primary electron energy used in the ELS measurements was systematically varied from 100 to 1150 eV in order to distinguish surface versus bulk loss processes. Two predominant loss features in the ELS spectra obtained from Cr metal at 9.0 and 23.0 eV are assigned to the surface and bulk plasmon excitations, respectively, and a number of other features arising from single electron transitions from both the bulk and surface Cr 3d bands to higher-lying states in the conduction band are also present. The ELS spectra obtained from Cr₂O₃ exhibit features that originate from both interband transitions and charge-transfer transitions between the Cr and O ions as well as the bulk plasmon at 24.4 eV. The ELS feature at 4.0 eV arises from a charge-transfer transition between the oxygen and chromium ions in the two surface layers beneath the chemisorbed oxygen layer, and the ELS feature at 9.8 eV arises from a similar transition involving the chemisorbed oxygen atoms. The intensity of the ELS peak at 9.8 eV decreases after Ar⁺ sputtering due to the removal of chemisorbed oxygen atoms. Sputtering also increases the number of Cr²⁺ states on the surface, which in turn increases the intensity of the 4.0 eV feature. Furthermore, the ELS spectra obtained from the sputtered Cr₂O₃ surface exhibit features characteristic of both Cr⁰ and Cr₂O₃, indicating that Ar⁺ sputtering reduces Cr₂O₃. The fact that neither the surface- nor the bulk-plasmon features of Cr⁰ can be observed in the ELS spectra obtained from sputtered Cr₂O₃ while the loss features due to Cr⁰ interband transitions are clearly present indicates that Cr⁰ atoms form small clusters lacking a bulk metallic nature during Ar⁺ bombardment of Cr₂O₃.     

Nanolayered multilayer coatings of CrN/CrAlN prepared by reactive DC magnetron sputtering

Single-phase CrN and CrAlN coatings were deposited on silicon and mild steel substrates using a reactive DC magnetron sputtering system. The structural characterization of the coatings was done using X-ray diffraction (XRD). The XRD data showed that both the CrN and CrAlN coatings exhibited B1 NaCl structure with a prominent reflection along (2 0 0) plane. The bonding structure of the coatings was characterized by X-ray photoelectron spectroscopy and the surface morphology of the coatings was studied using atomic force microscopy. Subsequently, nanolayered CrN/CrAlN multilayer coatings with a total thickness of approximately 1 μm were deposited on silicon substrates at different modulation wavelengths (Λ). The XRD data showed that all the multilayer coatings were textured along {2 0 0}. The CrN/CrAlN multilayer coatings exhibited a maximum nanoindentation hardness of 3125 kg/mm² at a modulation wavelength of 72 Å, whereas single layer CrN and CrAlN deposited under similar conditions exhibited hardness values of 2375 and 2800 kg/mm², respectively. Structural changes as a result of heating of the multilayer coatings in air (400-800 °C) were characterized using XRD and micro-Raman spectroscopy. The XRD data showed that the multilayer coatings were stable up to a temperature of 650 °C and peaks pertaining to Cr₂O₃ started appearing at 700 °C. These results were confirmed by micro-Raman spectroscopy. Nanoindentation measurements performed on the heat-treated coatings revealed that the multilayer coatings retained hardness as high as 2250 kg/mm² after annealing up to a temperature of 600 °C.     

Composition, microstructure, and properties of CrNx films deposited using medium frequency magnetron sputtering

CrN_x films were deposited on stainless steel and Si (1 1 1) substrates via medium frequency magnetron sputtering in a N₂ + Ar mixed atmosphere. The influence of N₂ content on the deposition rate, composition, microstructure, mechanical and tribological properties of the as-deposited films was investigated by means of the X-ray photoelectron spectrometry (XPS), X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), nanoindentation and tribometer testing. It was found that the N atomic concentration increased and the phase transformed from a mixture of Cr₂N + Cr(N) to single-phase Cr₂N, and then Cr₂N + CrN to pure CrN phase with the increase of N₂ content. The Cr 2p_3/2 and N 1s of XPS spectra also confirmed the evolution of phase. Accordingly, all films exhibited a typical columnar structure which lies in the zone T of Thornton Model. The mixed Cr₂N and Cr(N) phases showed low hardness and high friction coefficient. Cr₂N possessed higher hardness than CrN while CrN exhibited lower friction coefficient.     

Low energy Ar-ion bombardment effects on the CeO2 surface

The structure and electronic properties of epitaxial grown CeO₂(1 1 1) thin films before and after Ar⁺ bombardment have been comprehensively studied with synchrotron radiation photoemission spectroscopy (SRPES). Ar⁺ bombardment of the surface causes a new emission appearing at 1.6 eV above the Fermi edge which is related to the localized Ce 4f¹ orbital in the reduced oxidation state Ce³⁺. Under the condition of the energy of Ar ions being 1 keV and a constant current density of 0.5 μA/cm², the intensity of the reduced state Ce³⁺ increases with increasing time of sputtering and reaches a constant value after 15 min sputtering, which corresponds to the surface being exposed to 2.8 × 10¹⁵ ions/cm². The reduction of CeO₂ is attributed to a preferential sputtering of oxygen from the surface. As a result, Ar⁺ bombardment leads to a gradual buildup of an, approximately 0.69 nm thick, sputtering altered layer. Our studies have demonstrated that Ar⁺ bombardment is an effective method for reducing CeO₂ to CeO_2−x and the degree of the reduction is related to the energy and amount of Ar ions been exposed to the CeO₂ surface.     

Study of S ion-assisted sulfurization of n-GaAs (1 0 0) surface

The chemical structure and site location of sulfur atoms on n-GaAs (1 0 0) surface treated by bombardment of S⁺ ions over their energy range from 10 to 100 eV have been studied by X-ray photoelectron spectroscopy and low energy electron diffraction. The formation of Ga-S and As-S species on the S⁺ ion bombarded n-GaAs surface is observed. An apparent donor doping effect is observed for the n-GaAs by the 100 eV S⁺ ion bombardment. It is found that the S⁺ ions with higher energy are more effective in the formation of Ga-S species, which assists the n-GaAs (1 0 0) surface in reconstruction into an ordered (1 × 1) structure upon subsequent annealing. The treatment is further extended to repair Ar⁺ ion damaged n-GaAs (1 0 0) surface. It is found that after a n-GaAs (1 0 0) sample is damaged by 150 eV Ar⁺ ion bombardment, and followed by 50 eV S⁺ ion treatment and subsequent annealing process, finally an (1 × 1) ordering GaAs (1 0 0) surface with low surface states is obtained.     

Influence of reactive gas and temperature on structural properties of magnetron sputtered CrSiN coatings

CrSiN coatings were deposited on stainless steel (Grade: SA304) and silicon Si(1 0 0) substrates, with varying argon-nitrogen gas proportions and deposition temperature, using reactive magnetron sputtering technique in the present work. The influence of sputtering (Ar) and reactive gas proportions (N₂) and temperature on the structural properties of the CrSiN coating was investigated. A small amount of silicon content (3.67 at.% Si) plays a crucial role in addition to the nitrogen content for the formation of different phases in the CrSiN coatings as observed in the present work. For example, the coating with comparatively low nitrogen content, 40% N₂, during deposition, formed a crystalline structure consisting of nano-crystalline CrN which is separated by an amorphous SiN phase, as evident from X-ray diffraction (XRD) and transmission electron microscopy (TEM), respectively. The formation of CrN(1 1 1) and Cr₂N(1 1 1) phases has occurred at 30% N₂ with 3.67% Si content, which transformed in to CrN(1 1 1) and CrN(2 0 0) with increase in N₂ content but with same Si content. The surface topography and morphology of the coatings were analyzed by atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM), respectively. A less columnar growth is observed in CrSiN coatings deposited at low argon content, Ar:N₂ (20:80), and with 3.67 at.% Si in the coatings. However, it becomes dense with increase in nitrogen content and temperature. The XRD analysis showed that the intensity of a dominating peak (1 1 1) is decreasing from (80:20) to (60:40) argon:nitrogen environment. With a further increase of nitrogen content, from (60:40), in the sputtering gas mixture, to (40:60) argon-nitrogen, there is a sudden increase in (1 1 1) peak and above (40:60), the peak reduction rate is very slow than the previous one. The (1 1 1) and (2 0 0) peak intensity variations are very limited due to high nitrogen content, above 50%, and considerable amount of Si atoms, 3.67 at.%, present in the CrN coatings.     

Magnetic and electrical properties of amorphous Ge1−xCrx thin films grown by low temperature vapor deposition

Amorphous Ge_1−xCr_x thin films are deposited on (1 0 0)Si by using a thermal evaporator. Amorphous phase is obtained when Cr concentration is lower than 30.7 at%. The electrical resistivities are 1.89×10⁻³–0.96×10² Ω cm at 300 K, and decrease with Cr concentration. The Ge_1−xCr_x thin films are p-type. The hole concentrations are 5×10¹⁶–7×10²¹ cm⁻³ at 300 K, and increase with Cr concentration. Magnetizations are 7.60–1.57 emu/cm³ at 5 K in the applied field of 2 T. The magnetizations decrease with Cr concentration and temperature. Magnetization characteristics show that the Ge_1−xCr_x thin films are paramagnetic.     

Electron stimulated desorption of H3O from 316L stainless steel

Surface ions generated by electron stimulated desorption from mass spectrometer ion source grids are frequently observed, but often misidentified. For example, in the case of mass 19, the source is often assumed to be surface fluorine, but since the metal oxide on grid surfaces has been shown to form water and hydroxides, a more compelling case can be made for the formation of hydronium. Further, fluorine is strongly electronegative, so it is rarely generated as a positive ion. A commonly used metal for ion source grids is 316L stainless steel. Thermal vacuum processing by bakeout or radiation heating from the filament typically alters the surface composition to predominantly Cr₂O₃. X-ray photoelectron spectral shoulders on the O 1s and Cr 2p_3/2 peaks can be attributed to adsorbed water and hydroxides, the intensity of which can be substantially increased by hydrogen dosing. On the other hand, the sub-peak intensities are substantially reduced by heating and/or by electron bombardment. Electron bombardment diode measurements show an initial work function increase corresponding to predominant hydrogen desorption (H₂) and a subsequent work function decrease corresponding to predominant oxygen desorption (CO). The fraction of hydroxide concentration on the surface was determined from X-ray photoelectron spectroscopy and from the deconvolution of temperature desorption spectra. Electron stimulated desorption yields from the surface show unambiguous H₃O⁺ peaks that can be significantly increased by hydrogen dosing. Time of flight secondary ion mass spectrometry sputter yields show small signals of H₃O⁺, as well as its constituents (H⁺, O⁺ and OH⁺) and a small amount of fluorine as F⁻, but no F⁺ or F⁺ complexes (HF⁺, etc.). An electron stimulated desorption cross-section of σ⁺ ∼ 1.4 × 10⁻²⁰ cm² was determined for H₃O⁺ from 316L stainless steel for hydrogen residing in surface chromium hydroxide.     

Ar irradiation of Si nanocrystal-doped SiO2: Evolution of photoluminescence

We report the evolution of photoluminescence (PL) of Si nanocrystals (nc-Si) embedded in a matrix of SiO₂ during Ar⁺ ion bombardment. The integrated intensity of nc-Si PL falls down drastically before the Ar⁺ ion fluence of 10¹⁵ ions cm⁻², and then decreases slowly with the increasing ion fluence. At the meantime, the PL peak position blueshifts steadily before the fluence of 10¹⁵ ions cm⁻², and then changes in an oscillatory manner. Also it is found that the nc-Si PL of the Ar⁺-irradiated sample can be partly recovered after annealing at 800 °C in nitrogen, but can be almost totally recovered after annealing in oxygen. The results confirm that the ion irradiation-induced defects are made up of oxygen vacancies, which absorb light strongly. The oscillatory peak shift of nc-Si can be related to a size-distance distribution of nc-Si in SiO₂.     

Ion sputtering rates of W-, Ti- and Cr-carbides studied at different Ar ion incidence angles

To study the ion sputtering rates of W-, Ti- and Cr-carbides, trilayer structures comprising C-graphite (59 nm)/WC (50 nm)/W (38 nm), C-graphite (56 nm)/TiC (40 nm)/Ti (34 nm) and C-graphite (46 nm)/C₃C₂ (60 nm)/Cr (69 nm) with a tolerance ±2% were sputter deposited onto smooth silicon substrates. Their precise structural and compositional characterization by transmission electron microscopy (TEM), Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) revealed that the WC and Cr₃C₂ layers were amorphous, while the TiC layer had a polycrystalline structure. The ion sputtering rates of all three carbides, amorphous carbon and polycrystalline Cr, Ti and W layers were determined by means of Auger electron spectroscopy depth profiling as a function of the angle of incidence of two symmetrically inclined 1 keV Ar⁺ ion beams in the range between 22° and 82°. The sputtering rates were calculated from the known thicknesses of the layers and the sputtering times necessary to remove the individual layers. It was found that the sputtering rates of carbides, C-graphite and metals were strongly angle dependent. For the carbides in the range between 36° and 62° the highest ion sputtering rate was found for Cr₃C₂ and the lowest for TiC, while the values of the sputtering rates for WC were intermediate. The normalized sputtering yields calculated from the experimentally obtained data for all three carbides followed the trend of theoretical results obtained by calculation of the transport of ions in solids by the SRIM code. The sputtering yields are also presented in terms of atoms/ion. Our experimental data for two ion incidence angles of 22° and 49° and reported values of other authors for C-graphite and metals are mainly inside the estimated error of about ±20%. The influence of the ion-induced surface topography on the measured sputtering yields was estimated from the atomic force microscope (AFM) measurements at the intermediate points of the corresponding layers on the crater walls formed during depth profiling.     

Structural studies of Cr-doped mullite derived from single-phase precursors

Cr-doped mullites were prepared from single-phase precursors containing up to 9.60 wt% Cr₂O₃ using a sol-gel technique followed by thermal treatment. Particle induced X-ray emission spectroscopy and X-ray powder diffraction were used to characterize the samples. Mullites were orthorhombic, space group Pbam. Cr doping caused the increase of unit-cell parameters. Strongest expansion was noticed along c-axis followed by a and b (Δc/c=0.089, Δa/a=0.061, Δb/b=0.045% per mole Cr₂O₃). A second phase, namely θ-(Al,Cr)₂O₃, was revealed by XRD in the sample containing 9.60 wt% Cr₂O₃. The structure of mullites was refined by the Rietveld method, location of Cr³⁺ was performed by the EPR spectroscopy. At low chromium doping level (Cr₂O₃ content less than ∼5 wt%) Cr³⁺ ions were substituted for Al³⁺ in the AlO₆ octahedra of the mullite structure (M1 site). For higher doping level, Cr³⁺ ions were additionally substituted for Al³⁺ in the AlO₆ octahedra of the second phase [θ-(Al,Cr)₂O₃ at 1400 °C, or α-(Al,Cr)₂O₃ at 1600 °C] which segregated in the system. Substitution of Cr³⁺ for Al³⁺ on M1 site in the mullite structure resulted in increase of average distances in (M1)O₆ octahedron and decrease of average distances in T*O₄ tetrahedron, while average distances in TO₄ tetrahedron stayed almost constant.     

Structural and mechanical properties of compositionally gradient CrNx coatings prepared by arc ion plating

Compositionally gradient CrN_x coatings were fabricated using arc ion plating by gradually increasing N₂ flow rate during the deposition process. The effect of substrate bias, ranging from 0 to −250 V, on film microstructure and mechanical properties were systematically investigated with XRD, SEM, HRTEM, nanoindentation, adhesion and wear tests. The results show that substrate bias has an important influence on film microstructure and mechanical properties of gradient CrN_x coatings. The coatings mainly crystallized in the mixture of hexagonal Cr₂N, bcc Cr and fcc rock-salt CrN phases. N₂ flow rate change during deposition results in phase changes in order of Cr, Cr + Cr₂N, Cr₂N, Cr₂N + CrN, and CrN, respectively, along thickness direction. Phase fraction and preferred orientation in CrN_x coatings vary with substrate bias, exerting an effective influence on film hardness. With the increasing of bias, film microstructure evolves from an apparent columnar structure to a highly dense one. The maximum hardness of 39.1 GPa was obtained for the coatings deposited at a bias of −50 V with a friction coefficient of 0.55. It was also found that adhesion property and wear resistance of gradient CrN_x coatings were better than that of homogeneous CrN coatings.     

Magnetic ordering in La0.75Sr0.25CrO3: A neutron diffraction study

Low-temperature neutron diffraction measurements were carried out on a powder sample of the compound La_0.75Sr_0.25CrO₃ in order to elucidate its magnetic structure. Rietveld analysis of the neutron diffraction data, as a function of temperature, showed that it possesses a G-type antiferromagnetic alignment of Cr spins at all temperatures below 300 K. Down to the lowest achievable temperature, viz. 17 K, the Cr site moments were found to be the weighted average of the 75% Cr³⁺ and 25% Cr⁴⁺ spin-only ionic moments. At 17 K, the Cr site moment was 2.71(5) μ_B/Cr ion. There is no observable change in the Cr–O bond lengths as a function of temperature. The tilt angles of the CrO₆ octahedra marginally increase with decreasing temperature.     

Corrosion behavior and composition analysis of chromate passive film on electroless Ni-P coating

A passive film was formed on electroless Ni-P coating (ENPC) in a bath of K₂Cr₂O₇ 30 g/l. XPS and electrochemical methods were employed to analyze its chemical compositions and corrosion behaviors. The potentiodynamic polarization tests indicated the corrosion current of the passivated sample was 1/30 that of as-plated ENPC. The XPS analysis illustrated the film comprised Cr, Ni and O. The film thickness was evaluated to be a few nanometers according to the sputtering rate of Ar⁺ ion. High-resolution XPS spectra suggested that the detected Cr in film was in the form of trivalent compounds, Cr₂O₃ and Cr(OH)₃.     

Formation of nanodots on oblique ion sputtered InP surfaces

Using a field emission gun based scanning electron microscopy, we report the formation of nanodots on the InP surfaces after bombardment by 100 keV Ar⁺ ions under off-normal ion incidence (30° and 60° with respect to the surface normal) condition in the fluence range of 1 × 10¹⁶ to 1 × 10¹⁸ ions cm⁻². Nanodots start forming after a threshold fluence of about 1 × 10¹⁷ ions cm⁻². It is also seen that although the average dot diameter increases with fluence the average number of dots decreases with increasing fluence. Formation of such nanostructured features is attributed due to ion-beam sputtering. X-ray photoelectron spectroscopy analysis of the ion sputtered surface clearly shows In enrichment of the sputtered InP surface. The observation of growth of nanodots on the Ar⁺-ion sputtered InP surface under the present experimental condition matches well with the recent simulation results based on an atomistic model of sputter erosion.     

Crystal structure and compressibility of a high-pressure Ti-rich oxide, (Ti0.50Zr0.26Mg0.14Cr0.10)O1.81, isomorphous with cubic zirconia

A Ti-rich oxide, (Ti_0.50Zr_0.26Mg_0.14Cr_0.10)_∑=1.0O_1.81, was synthesized at 8.8 GPa and 1600 °C using a multi-anvil apparatus. Its crystal structure at ambient conditions and compressibility up to 10.58 GPa were determined with single-crystal X-ray diffraction. This high-pressure phase is isomorphous with cubic zirconia (fluorite-type) with space group Fm3¯m and unit-cell parameters a=4.8830(5) Å and V=116.43(4) Å³. Like stabilized cubic zirconia, the structure of (Ti_0.50Zr_0.26Mg_0.14Cr_0.10)O_1.81 is also relaxed, with all O atoms displaced from the (, , ) position along 〈1 0 0〉 by 0.319 Å and all cations from the (0, 0, 0) position along 〈1 1 1〉 by 0.203 Å. No phase transformation was detected within the experimental pressure range. Fitting the high-pressure data (V vs. P) to a third-order Birch-Murnaghan EOS yields K₀=164(4) GPa, K′=4.3(7), and V₀=116.38(3) Å³. The bulk modulus of (Ti_0.50Zr_0.26Mg_0.14Cr_0.10)O_1.81 is significantly lower than that (202 GPa) determined experimentally for cubic TiO₂ or that (~210 GPa) estimated for cubic ZrO₂. This study demonstrates that cubic TiO₂ may also be obtained by introducing various dopants, similar to the way cubic zirconia is stabilized below 2370 °C. Furthermore, (Ti_0.50Zr_0.26Mg_0.14Cr_0.10)O_1.81 has the greatest ratio of Ti⁴⁺ content vs. vacant O²⁻ sites of all doped cubic zirconia samples reported thus far, making it a more promising candidate for the development of electrolytes in solid oxide fuel cells.     

Study of the CO2 decomposition over doped Ni-ferrites

The H₂ reduced NiFe_2−xCr_xO₄ can be used to decompose CO₂ to C repeatedly. A series of nanocrystalline Ni-ferrite doping different contents of Cr³⁺ were synthesized by mixed ions co-precipitation method and characterized by XRD, BET and TEM. The results showed that their crystallite sizes were 1-2 nm and BET surface area changed from 220 to 285 m²/g. The evaluation of the activity and stability indicated that Ni-ferrite with 4 wt% Cr³⁺ dopant could be used repeatedly as many as 60 times and was transformed to Fe_yNi_1−y (0<y<1) alloy and Fe₅C₂ gradually during the cycle decomposition of CO₂ to carbon, especially for no Cr³⁺ sample. After the 60th reaction, although NiFe₂O₄ phase just remained 2.1 wt%, the decomposition activity of Ni-ferrite with 4 wt% Cr³⁺ was still 60% of initial activity. This fact suggests that nanocrystalline Fe_yNi_1−y (0<y<1) alloy from the cycle reaction can contribute to the decomposition of CO₂. The results from scanning electron microscopy (SEM), TEM and XRD show that the deposited carbon from CO₂ decomposition consisted of amorphous, crystallite and carbon nanotubes.     

SEM and XPS studies of nanohole arrays on InP(1 0 0) surfaces created by coupling AAO templates and low energy Ar ion sputtering

The aim of the present study is to demonstrate the feasibility to form well-ordered nanoholes on InP(1 0 0) surfaces by low Ar⁺ ion sputtering process in UHV conditions from anodized aluminum oxide (AAO) templates. This process is a promising approach in creating ordered arrays of surface nanostructures with controllable size and morphology. To follow the Ar⁺ ion sputtering effects on the AAO/InP surfaces, X-ray photoelectron spectroscopy (XPS) was used to determine the different surface species. In_4d and P_2p core level spectra were recorded on different InP(1 0 0) surfaces after ions bombardment. XPS results showed the presence of metallic indium on both smooth InP(1 0 0) and AAO/InP(1 0 0) surfaces. Finally, we showed that this experiment led to the formation of metallic In dropplets about 10 nm in diameter on nanoholes patterned InP surface while the as-received InP(1 0 0) surface generated metallic In about 60 nm in diameter.     

Chemical effects in TiO2 and titanates due to bombardment with Ar+ and O 2 + ions of different energies (3.5-10 keV)

Compositional and chemical changes in TiO₂ and Ph, Ni, Al and Ba titanates induced by bombardment with Ar⁺ and O ₂ ⁺ ons of different energies have been studied quantitatively by XPS. An increase of preferential loss of oxygen and, in case of PbTiO₃, of lead has been observed when increasing the Ar+ ion energy from 3.5 to 10 keV. Because of oxygen loss, Ti⁴⁺ species reduce to Ti³⁺ and Ti²⁺. In addition, the loss of oxygen from PbTiO₃ and NiTiO₃ leads to the metallic state of nickel and lead, whereas aluminium and barium in Al₂TiO₅ and BaTiO₃ maintain their chemical state (i.e., Al³⁺ and Ba²⁺). Bombardment with OZ ions of PbTiO₃ and NiTiO₃ leads to a partial reduction of Pb and Ni. This metallization and the preferential loss of lead are more efficient at higher ion energies for both, O ₂ ⁺ and Ar⁺ bombardment. The results are discussed in terms of chemical stabilities and the possibility of oxygen diffusion in the bombarded oxides.