Magnetization reversal dynamics in Au/Co/Au(111) ultrathin films: Effect of roughness of the buffer layer

We present a study of the magnetization reversal dynamics in ultrathin Au/Co/Au films with perpendicular magnetic anisotropy, for a Co thickness of 0.5, 0.7 and 1 nm. In these films, the magnetization reversal is dominated by domain nucleation for t_Co=0.5, 0.7 nm and by domain wall propagation for t_Co=1 nm. The prevalence of domain nucleation for the thickness range 0.5-0.7 nm is different from results reported in the literature, for the same system and for the same thickness range, where the magnetization reversal took place mainly by domain wall motion. We attribute this difference to the effect of roughness of the Au buffer layer on the morphology of the magnetic layer.     

Surface-enhanced Raman spectroscopy based on ordered nanocap arrays

We fabricated the Ag cap array for surface-enhanced Raman scattering (SERS) by Ag deposition onto two dimensional polystyrene colloid sphere templates, and 4-mercaptopyridine (4-MPy) was used as the probing molecule. When the colloids with different size were chosen as the substrate for 20 nm Ag deposition, the film on 100 nm colloids gave the significant enhancement. SERS intensity increased with the increase of Ag thickness. When 20 nm Ag film was coated by Ta, the SERS signals decreased with the increase of Ta thickness, indicating the main effect from the top of cap structure. When Co layer was added under the Ag film, the SERS intensity decreased with the increase of Co thickness because the Co layer affects electromagnetic and plasmon resonance.     

Effect of Co layer thickness on structural and magnetic properties of C/Co/C films

Granular C/Co/C films have been prepared by magnetron sputtering from C and Co onto glass substrates at room temperature and subsequent in situ annealing. It has been found that the structure and magnetic properties of the C/Co/C films depend strongly on the Co layer thickness. Vibrating sample magnetometer measurements indicate that the in-plane coercivities reach maximum in 20 nm Co thickness of both as-deposited and annealed films. The squareness ratio of annealed films was more than 0.8. X-ray diffraction shows that majority Co nanograins are formed as the hexagonal-close-packed (HCP) structure in 20 nm Co thickness with annealing at 400 °C. Scanning probe microscope was used to scan surface morphology and magnetic domain structures. The values of the surface roughness were lower than 0.6 nm in all annealed samples. The average magnetic cluster size was estimated to be about 10 nm in annealed 20 nm Co thickness films.     

Structural and superconducting properties of ion beam sputtered Nb thin films and Nb/Cu bilayers

We present the results of a study of structural and superconducting properties of polycrystalline Nb thin films (200 Å, 300 Å, 400 Å, 700 Å and 1000 Å) and Nb/Cu bilayers (300 Å/300 Å and 400 Å/300 Å) prepared on Si substrates by ion beam sputtering at room temperature. The thicknesses, roughnesses at the surfaces and interfaces were determined by X-ray reflectivity whereas the grain sizes were determined from grazing incidence X-ray diffraction and transmission electron microscopic studies. The superconducting transition temperature (T_C) of Nb thin films are smaller than T_C of bulk Nb. The Nb-200 Å sample does not show T_C down to 2.3 K. The average size of the grains varies from 42 Å for Nb-200 Å sample to 69 Å for Nb-1000 Å sample. Our results show that the T_C in these polycrystalline films is not only limited by its thickness but also by the size of the grains. The Nb films deposited in situ on the Cu layer (Nb/Cu) show a marginal increase in average sizes of the grains as compare to their respective values in Nb films of same thicknesses. As a result a marginal increase in T_C of these films is also observed. The maximum decrease in T_C due to oxygen intake during deposition should be about 0.5 K from its bulk value (9.28 K). We have attributed the large decrease in T_C in our case on the basis of decrease in the Debye temperature and density of states at the Fermi level for Nb thin films as compared to their respective values for bulk Nb.     

Compressed exponential form for disordered domain wall motion in ultra-thin Au/Co/Au ferromagnetic films

Magnetization reversal in ultra-thin Au/Co/Au films deposited on single crystal silicon (1 0 0) was investigated using Kerr microscopy. In the considered ultra-thin Co films, with a thickness between 0.7 and 1 nm, the coercivity and magnetic anisotropy decrease with decrease in cobalt layer thickness and the magnetization reversal dynamics is dominated by disordered domain wall motion. An analysis of the observed magnetization reversal dynamics is proposed, starting from the Fatuzzo-Labrune model. We show that the relaxation curves of these samples are well described by a function obtained by a technical transformation of Fatuzzo-Labrune model in the regime dominated by domain wall motion.     

Fabrication of silver stabilization layer of coated conductor using organic silver complexes

Silver stabilizing layer of coated conductor has been prepared by dip coating method using organic silver complexes containing 10 wt.% silver as a starting material. Coated silver complex layer was dried in situ with hot air and converted to crystalline silver by post heat treatment in flowing oxygen atmosphere. A dense continuous silver layer with good surface coverage and proper thickness of 230 nm is obtained by multiple dip coatings and heat treatments. The film heat treated at 500 °C showed good mechanical adhesion and crystallographic property. The interface resistivity between superconducting YBCO layer and silver layer prepared by dip coating was measured as 0.67 × 10⁻¹³ Ω m².     

Magnetic Compton profiles of Fe thin film and anisotropy of Co/Pd multilayer

The magnetic Compton profiles (MCPs) of Fe thin film with 1 μm thickness have been successfully measured, using polyethylene terephtalate (PET) substrates with 4 μm thickness to reduce scattering photons from substrate.We have succeeded for the first time to observe the anisotropy of MCPs in the Co/Pd multilayer. The magnetic out-of-plane anisotropy of the current Co (0.8 nm)/Pd (1.6 nm) multilayer sample can be explained by the model of a large number of the |m|=1 states of 3d-bands.     

Dependence of magnetic properties on ferromagnetic layer thickness in trilayer Co/Ge/Co films with granular semiconducting spacer

We have investigated the magnetic properties of trilayer films of Co–Ge–Co. At a fixed thickness of germanium of 3.5 nm, the formation and distribution of metastable amorphous and cubic phases depends on the thickness of the ferromagnetic layer. The portion of the stable hexagonal phase is affected, too. Possible mechanisms for forming the observed magnetic structure are discussed.     

Proximity effect in Nb/Zr multilayers with variable Nb/Zr ratio

We have investigated the effect of varying the individual layer thickness on the superconducting transition temperature (T_C) of Nb/Zr multilayers. These thin film multilayer structures were deposited using UHV magnetron sputtering with layer thickness ranging from 0.5 to 8 nm. In conformity with the predictions of the de Gennes equations in the Cooper limit (layer thickness small compared to coherence length), we find that the T_C increases with increasing thickness of the Nb layer (when the Zr layer thickness is constant), and decreases with increasing thickness of the Zr layer (when the Nb layer thickness is constant). The possible effect of the existence of an interfacial Nb-Zr layer is discussed. We also point out the marked influence of the in-plane grain dimension on the T_C in these multilayers.     

Defects in nanocrystalline Nb films: Effect of sputtering temperature

Thin niobium (Nb) films (thickness 350-400 nm) were prepared on (1 0 0)Si substrate in a UHV chamber using the cathode beam sputtering. The sputtering temperature T_s was varied from 40 up to 500 °C and the influence of the sputtering temperature on the microstructure of thin Nb films was investigated. Defect studies of the thin Nb films sputtered at various temperatures were performed by slow positron implantation spectroscopy (SPIS) with measurement of the Doppler broadening of the annihilation line. SPIS was combined with transmission electron microscopy (TEM) and X-ray diffraction (XRD). We have found that the films sputtered at T_s = 40 °C exhibit elongated, column-like nanocrystalline grains. No significant increase of grain size with T_s (up to 500 °C) was observed by TEM. The thin Nb films sputtered at T_s = 40 °C contain a high density of defects. It is demonstrated by shortened positron diffusion length and a high value of the S parameter for Nb layer compared to the well-annealed (defect-free) bulk Nb reference sample. A drastic decrease of defect density was found in the films sputtered at T_s ≥ 300 °C. It is reflected by a significant increase of the positron diffusion length and a decrease of the S parameter for the Nb layer. The defect density in the Nb layer is, however, still substantially higher than in the well-annealed reference bulk Nb sample. Moreover, there is a layer at the interface between the Nb film and the substrate with very high density of defects comparable to that in the films sputtered at T_s < 300 °C. All the Nb films studied exhibit a strong (1 1 0) texture. The films sputtered at T_s < 300 °C are characterized by a compressive macroscopic in-plane stress due to lattice mismatch between the film and the substrate. Relaxation of the in-plane stress was observed in the films sputtered at T_s ≥ 300 °C. The width of the XRD profiles of the films sputtered at T_s ≥ 300 °C is significantly smaller compared to the films sputtered at lower temperatures. This is most probably due to a lower defect density which results in reduced microstrains in the films sputtered at higher temperatures.     

Investigation of ferromagnetic coupling between Co layers in a Co/Pt multilayer with perpendicular anisotropy

The coercivity of a Co/Pt multilayer with out-of-plane anisotropy can be lowered greatly if it is grown onto an ultrathin NiO underlayer . By making use of this characteristic, a series of samples glass/NiO(10 Å)/[Co(4 Å)/Pt(5 Å)]₃/Pt(x Å)/[Co(4 Å)/Pt(5 Å)]₃ with different Pt spacer thickness have been prepared to determine the ferromagnetic (FM) coupling between Co layers across the Pt layer. The measurements of major and minor hysteresis loops have shown that the FM coupling between the top and bottom Co/Pt multilayers decreases monotonically with the Pt layer thickness and disappears above the Pt layer thickness of 40 Å. This thickness of 40 Å is much larger than that in the literature. In addition to the FM coupling between the top and bottom Co/Pt multilayers across the Pt spacer, there exists a weak biquadratic coupling, which induces the broad transition of the bottom Co/Pt multilayer.     

Characteristic difference between ITO/ZrCu and ITO/Ag bi-layer films as transparent electrodes deposited on PET substrate

The metallic-glass film of ZrCu layer deposited by co-sputtering was utilized as the metallic layer in the bi-layer structure transparent conductive electrode of ITO/ZrCu (IZC) deposited on the PET substrate using magnetron sputtering at room temperature. In addition, the pure Ag metal layer was applied in the same structure of transparent conductive film, ITO/Ag, in comparison with the IZC film. The ZrCu layer could form a continuous and smooth film in thickness lower than 6 nm, compared with the island structure of pure Ag layer of the same thickness. The 30 nm ITO/3 nm ZrCu films could show the optical transmittance of 73% at 550 nm wavelength. The 30 nm ITO/12 nm ZrCu films could show the better sheet resistance of 20 Ω/sq, but it was still worse than that of the ITO/Ag films. It was suggested that an alloy system with lower resistivity and negative mixing heat between atoms might be another way to form a continuous layer in thickness lower than 6 nm for metal film.     

Microstructure and microwave permeability of FeCo thin films with Co underlayer

Microstructure, static magnetic properties and microwave permeability of sputtered FeCo films were examined. Fe₆₀Co₄₀ films (100 nm in thickness) deposited on glass substrates exhibited in-plane isotropy and a large coercivity of 161.1 Oe. When same thickness films were deposited on 2.5 nm Co underlayer, well-defined in-plane anisotropy was formed with an anisotropy field of 65 Oe. The sample had a static initial permeability of about 285, maximum imaginary permeability of 1255 and ferromagnetic resonance frequency of 2.71 GHz. Cross-sectional TEM image revealed that the Co underlayer had induced a columnar grain structure with grain diameter of 10 nm in the FeCo films. In comparison, FeCo films without Co underlayer showed larger grains of 70 nm in diameter with fewer distinct vertical grain boundaries. In addition, the Co underlayer changed the preferred orientation of the FeCo from (1 0 0) to (1 1 0). The improvement in soft magnetic properties and microwave behavior originates from the modification of the film microstructure, which can be well understood by the random anisotropy theory.     

Influence of ferromagnetic layer on the exchange coupling of antiferromagnetic NiO-based films

Strong effects of ferromagnetic layer (FMCo, and Ni₈₀Fe₂₀) on the magnitude and blocking temperature of exchange coupling are observed in antiferromagnetic NiO-based films NiO (5 nm)/FM₁ (t nm)/FM₂ (6-t nm). The existence of interfacial spins configuration in glass-like state and FM anisotropy are proposed to interpret a minimum shown in thermal magnetization curves for films with strong exchange coupling effect. The microstructural change of FM layer and the long-range interaction of exchange bias are taken into account to explain a strong dependence of exchange coupling energy density on the thickness t_F of FM layer when t_F<5 nm.     

Study of Co thin films deposited on low-index Cu surfaces by photoemission electron microscopy

The domain structures of Co ultrathin film prepared with μm- and mm-dimension laterally were acquired and compared using X-ray Photoemission Electron Microscope (PEEM). Through depositing the Co film with different thickness on two copper single-crystal surfaces; Cu(1 0 0) and Cu(1 1 0), we report the impacts of thin film lateral dimensions, crystal orientations, and film thickness to the domain structures of Co layer.     

Dependence of surface distribution of self-assembled InSb nanodots on surface morphology and spacer layer thickness

Self-assembled InSb nanodots (NDs) were grown on a GaSb (1 0 0) substrate using metal-organic vapour phase epitaxy (MOVPE). The effects of etching depth of the substrate and thickness of the GaSb buffer layer on the density and size distribution of single and double layer dots were studied for detector applications. The etch depth of the substrate was varied up to 30 μm. In this particular study, the dots were grown at 450 °C and the GaSb spacer thickness was varied between 50 nm and 200 nm. The optimum substrate etch depth was found to be 30 μm while the best spacer thickness was found to be 200 nm.     

Effect of crystallinity of Co layer on perpendicular exchange bias in Au-capped ultrathin Co film on Cr2O3(0 0 0 1) thin film

The effect of the crystalline quality of ultrathin Co films on perpendicular exchange bias (PEB) has been investigated using a Au/Co/Au/α-Cr₂O₃ thin film grown on a Ag-buffered Si(1 1 1) substrate. Our investigation is based on the effect of the Au spacer layer on the crystalline quality of the Co layer and the resultant changes in PEB. An α-Cr₂O₃(0 0 0 1)layer is fabricated by the thermal oxidization of a Cr(1 1 0) thin film. The structural properties of the α-Cr₂O₃(0 0 0 1) layer including the cross-sectional structure, lattice parameters, and valence state have been investigated. The fabricated α-Cr₂O₃(0 0 0 1) layer contains twin domains and has slightly smaller lattice parametersthan those of bulk-Cr₂O₃. The valence state of the Cr₂O₃(0 0 0 1) layer is similar to that of bulk Cr₂O₃. The ultrathin Co film directly grown on the α-Cr₂O₃(0 0 0 1) deposited by an e-beam evaporator is polycrystalline. The insertion of a Au spacer layer with a thickness below 0.5 nm improves the crystalline quality of Co, probably resulting in hcp-Co(0 0 0 1). Perpendicular magnetic anisotropy (PMA) appears below the Néel temperature of Cr₂O₃ for all the investigated films. Although the PMA appears independently of the crystallinequality of Co, PEB is affected by the crystalline quality of Co. For the polycrystalline Co film, PEB is low, however, a high PEB is observed for the Co films whose in-plane atom arrangement is identical to that of Cr³⁺ in Cr₂O₃(0 0 0 1). The results are qualitatively discussed on the basis of the direct exchange coupling between Cr and Co at the interface as the dominant coupling mechanism.     

Effect of alkaline cleaning and activation on aluminum alloy 7075-T6

The effect of alkaline cleaning and activation on the composition and thickness of the oxide layer on aluminum alloy 7075-T6 was studied. E-pH diagrams were developed to predict the effect of alkaline cleaning and activation solutions on the stability of the oxide surface layers. The thickness of the native oxide layer was determined to be ∼30 nm by Auger electron spectroscopy depth profiling analysis. The outer ∼20 nm was rich in magnesium while the remaining ∼10 nm was rich in aluminum. Cleaning in a 9.1 pH alkaline solution was found to remove the magnesium-rich layer and leave behind an aluminum-rich oxide layer ∼10 nm thick. Activation in alkaline solutions of NaOH (pH > 12.9) or Na₂CO₃ (pH > 11.5) produced an oxide that was ∼20 to 60 nm thick and rich in magnesium. Alkaline cleaning and activation altered the oxide composition and thickness making it possible for deposition of thicker cerium-based conversion coatings (∼100 to 250 nm) compared to only alkaline cleaning (∼30 nm), with application of one spray cycle of deposition solution.     

Needle-like domain structure in Co films deposited on Mo (1 1 0)

Magnetization reversal processes and domain structures have been studied in Mo(1 1 0)/Co(0 0 0 1)/Au(1 1 1) structures grown by molecular beam epitaxy on monocrystalline (11–20) sapphire substrates. Wedge-shaped samples with different Co thickness gradients relative to the Mo [0 0 1] direction were fabricated. Observation of the domain structure was performed at room temperature using Kerr microscopy in a Co thickness range varying from 5 to 50 nm, where the magnetization is oriented in the plane of the sample. A Co thickness-dependent coercivity field was determined through analysis of the domain wall position during the reversal process. A preferential orientation of magnetic domain walls was found, with the domains being needle-like. The orientation, as well as the size of the needles, depends on the Co thickness and the orientation of the magnetic field applied in the sample plane.     

Effect of thickness and porous structure of SiC layers on the spectral response of the Pd/SiC-pSi Schottky photodiodes

In this work, we study the effect of the thickness and porous structure of silicon carbide (PSC) layers on the electrical properties of Schottky photodiodes by using a palladium (Pd) layer deposited on non-porous silicon carbide (SiC) and porous-SiC (PSC) layers. The non-porous and porous-SiC layers were realized on a p-type silicon (Si(1 0 0)) substrate by pulsed laser deposition using a KrF laser (248 nm) and thermal deposition of a thin Pd layer. The porous structure of the SiC layer deposited was developed by an electrochemical (anodization) method. The electrical measurements were made at room temperature (295 K) in an air ambience. The effect of the porous surface structure and the thickness of the SiC layer were investigated by evaluating electrical parameters such as the ideality factor (n) and barrier height (?_Bp). The thickness of the porous layer significantly affects the electrical properties of the Schottky photodiodes. Analysis of current-voltage (I-V) characteristics showed that the forward current might be described by a classical thermal emission theory. The ideality factor determined by the I-V characteristics was found to be dependent on the SiC thickness a value For a thin SiC layer (0.16 μm) n was around 1.325 with a barrier height 0.798 eV, while for a thick layer (1.6 μm), n and ?_Bp were 1.026 and 0.890 eV, respectively for Pd/SiC-pSi. These results indicate Schottky photodiodes with high performance are obtained for thicker SiC layer and for thin layer of PSC. This effect showed the uniformity of the SiC layer. In the same case the ideality factor (n) decreases for Pd/PSC-pSi(1 0 0) for low SiC thickness by report of Pd/PSC-pSi(1 0 0) Schottky photodiodes, but for Pd/PSC-pSi(1 0 0) n increase for large SiC thickness layer. We notice that the barrier height (?_Bp) was reversely depend by report of ideality factor. A spectral response value of (SR) of 34 mA/W at λ = 400 nm was measured for Pd/0.16 μm SiC-pSi Schottky photodiode with low SiC thickness. On the other hand, a value of SR = 0.14 mA/W at λ = 900 nm was obtained when we used PSC layer (Pd/PSC-pSi(1 0 0)). A reverse behaviour occurs for thicker SiC layer. Finally, it was found that the thickness and surface porous structure have strong effect on sensitivity.