NbTi0.5Ni0.5O4 as anode compound material for SOFCs

NbTi_0.5Ni_0.5O₄ (NTNO) has been prepared using solid state synthesis and investigated as a potential anode material. The oxide form of NTNO has single phase rutile-type structure with tetragonal (P42/mnm) space group. The reduced form is a composite of nano-scaled particles of metallic Ni and Nb_1.33Ti_0.67O₄ phase. Reduced NTNO showed high electronic conductivity up to 280 S.cm^− 1 at 900 °C in reducing atmosphere, but suffers from low CTE equal to 3.78 10^− 6 K^− 1. Studies of NTNO as anode material were carried out in a three electrode - electrochemical half cell configuration under pure humidified H₂ at 900 °C using a 2 mm thick zirconia electrolyte and without any additional current collector material. The results show a reasonable series resistance (R_s) equal to 2.7 Ωcm² (about 50% higher than for metallic gold layers) indicating a good current collection performance for a 10 μm layer of material. The polarization resistance (R_p) was equal to 33 Ωcm² and is attributed to a poor density of three phase boundaries (TPB) and shortage of oxide ion conduction in the anode layer. The results show the potential of NTNO as an anode material, especially after optimization of the microstructure towards the increase of TPB length.     

The application of Raman and anti-stokes Raman spectroscopy for in situ monitoring of structural changes in laser irradiated titanium dioxide materials

The use of Raman and anti-stokes Raman spectroscopy to investigate the effect of exposure to high power laser radiation on the crystalline phases of TiO₂ has been investigated. Measurement of the changes, over several time integrals, in the Raman and anti-stokes Raman of TiO₂ spectra with exposure to laser radiation is reported. Raman and anti-stokes Raman provide detail on both the structure and the kinetic process of changes in crystalline phases in the titania material. The effect of laser exposure resulted in the generation of increasing amounts of the rutile crystalline phase from the anatase crystalline phase during exposure. The Raman spectra displayed bands at 144 cm⁻¹ (A1g), 197 cm⁻¹ (Eg), 398 cm⁻¹ (B1g), 515 cm⁻¹ (A1g), and 640 cm⁻¹ (Eg) assigned to anatase which were replaced by bands at 143 cm⁻¹ (B1g), 235 cm⁻¹ (2 phonon process), 448 cm⁻¹ (Eg) and 612 cm⁻¹ (A1g) which were assigned to rutile. This indicated that laser irradiation of TiO₂ changes the crystalline phase from anatase to rutile. Raman and anti-stokes Raman are highly sensitive to the crystalline forms of TiO₂ and allow characterisation of the effect of laser irradiation upon TiO₂. This technique would also be applicable as an in situ method for monitoring changes during the laser irradiation process.     

Crystallization of 21.25Gd2O3-63.75MoO3-15B2O3 glass induced by femtosecond laser at the repetition rate of 250 kHz

We report the formation of β′-Gd₂(MoO₄)₃ (GMO) crystal on the surface of the 21.25Gd₂O₃-63.75MoO₃-15B₂O₃ glass, induced by 250 kHz, 800 nm femtosecond laser irradiation. The morphology of the modified region in the glass was clearly examined by scanning electron microscopy (SEM). By micro-Raman spectra, the laser-induced crystals were confirmed to be GMO phases and it is found that these crystals have a strong dependence on the number and power of the femtosecond laser pulses. When the irradiation laser power was 900 mW, not only the Raman peaks of GMO crystals but also some new peaks at 214 cm⁻¹, 240 cm⁻¹, 466 cm⁻¹, 664 cm⁻¹ and 994 cm⁻¹which belong to the MoO₃ crystals were observed. The possible mechanisms are proposed to explain these phenomena.     

Stabilization of a very high-k crystalline ZrO2 phase by post deposition annealing of atomic layer deposited ZrO2/La2O3 dielectrics on germanium

The impact of the ZrO₂/La₂O₃ film thickness ratio and the post deposition annealing in the temperature range between 400 °C and 600 °C on the electrical properties of ultrathin ZrO₂/La₂O₃ high-k dielectrics grown by atomic layer deposition on (1 0 0) germanium is investigated. As-deposited stacks have a relative dielectric constant of 24 which is increased to a value of 35 after annealing at 500 °C due to the stabilization of tetragonal/cubic ZrO₂ phases. This effect depends on the absolute thickness of ZrO₂ within the dielectric stack and is limited due to possible interfacial reactions at the oxide/Ge interface. We show that adequate processing leads to very high-k dielectrics with EOT values below 1 nm, leakage current densities in the range of 0.01 A/cm², and interface trap densities in the range of 2-5 × 10¹² eV⁻¹ cm⁻².     

The size and strain effects on the Raman spectra of Ce1−xNdxO2−δ (0≤x≤0.25) nanopowders

Ultrafine Ce_1−xNd_xO_2−δ (x=0-0.25) powders were synthesized by self-propagating room temperature synthesis. Raman spectra were measured at room temperature in the 300-700 cm⁻¹ spectral range. The shift and asymmetric broadening of the Raman F_2g mode at about 454 cm⁻¹ in pure and doped ceria samples could be explained with combined size and inhomogenous strain effects. Increased concentration of O²⁻ vacancies with doping is followed by an appearance of new Raman feature at about 545 cm⁻¹.     

Intralamellar structural modifications related to the proton exchanging in K4Nb6O17 layered phase

Basic structural aspects about the layered hexaniobate of K₄Nb₆O₁₇ composition and its proton-exchanged form were investigated mainly by spectroscopic techniques. Raman spectra of hydrous K₄Nb₆O₁₇ and H₂K₂Nb₆O₁₇·H₂O show significant modifications in the 950-800 cm⁻¹ region (Nb-O stretching mode of highly distorted NbO₆ octahedra). The band at 900 cm⁻¹ shifts to 940 cm⁻¹ after the replacement of K⁺ ion by proton. Raman spectra of the original materials and the related deuterated samples are similar suggesting that no isotopic effect occurs. Major modifications were observed when H₂K₂Nb₆O₁₇ was dehydrated: the relative intensity of the band at 940 cm⁻¹ decreases and new bands seems to be present at about 860-890 cm⁻¹. The H⁺ ions should be shielded by the hydration sphere what preclude the interaction with the layers. Removing the water molecules, H⁺ ions can establish a strong interaction with oxygen atoms, decreasing the bond order of Nb-O linkage. X-ray absorption near edge structure studies performed at Nb K-edge indicate that the niobium coordination number and oxidation state remain identical after the replacement of potassium by proton. From the refinement of the fine structure, it appears that the Nb-Nb coordination shell is divided into two main contributions of about 0.33 and 0.39 nm, and interestingly the population, i.e., the number of backscattering atoms is inversed between the two hexaniobate materials.     

Influence of postdeposition annealing on structural properties and electrical characteristics of thin Tm2O3 and Tm2Ti2O7 dielectrics

We describe the structural properties and electrical characteristics of thin thulium oxide (Tm₂O₃) and thulium titanium oxide (Tm₂Ti₂O₇) as gate dielectrics deposited on silicon substrates through reactive sputtering. The structural and morphological features of these films were explored by X-ray diffraction, X-ray photoelectron spectroscopy, secondary ion mass spectrometry, and atomic force microscopy, measurements. It is found that the Tm₂Ti₂O₇ film annealed at 800 °C exhibited a thinner capacitance equivalent thickness of 19.8 Å, a lower interface trap density of 8.37 × 10¹¹ eV⁻¹ cm⁻², and a smaller hysteresis voltage of ∼4 mV than the other conditions. We attribute this behavior to the Ti incorporated into the Tm₂O₃ film improving the interfacial layer and the surface roughness. This film also shows negligible degrees of charge trapping at high electric field stress.     

Electrical properties vs. microstructure of nanocrystallized V2O5-P2O5 glasses — An extended temperature range study

An electronically conducting nanomaterial was synthesized by nanocrystallization of a 90V₂O₅·10P₂O₅ glass and its electrical properties were studied in an extended temperature range from − 170 to + 400 °C. The conductivity of the prepared nanomaterial reaches 2 ? 10^− 1 S cm^− 1 at 400 °C and 2 ? 10^− 3 S cm^− 1 at room temperature. It is higher than that of the original glass by a factor of 25 at room temperature and more than 100 below − 80 °C. A key role in the conductivity enhancement was ascribed to the material's microstructure, and in particular to the presence of the large number of small (ca. 20 nm) grains of crystalline V₂O₅. The observed conductivity dependencies are discussed in terms of the Mott's theory of the electronic hopping transport in disordered systems. Since V₂O₅ is known for its ability to intercalate lithium, the presented results might be helpful in the development of cathode materials for Li-ion batteries.     

Hydrothermal synthesis, characterization and Raman studies of Eu activated Gd2O3 nanorods

Eu³⁺ (8 mol%) activated gadolinium oxide nanorods have been prepared by hydrothermal method without and with surfactant, cityl trimethyl ammonium bromide (CTAB). Powder X-ray diffraction (PXRD) studies reveal that the as-formed product is in hexagonal Gd(OH)₃:Eu phase and subsequent heat treatment at 350 and 600 °C transforms the sample to monoclinic GdOOH:Eu and cubic Gd₂O₃:Eu phases, respectively. The structural data and refinement parameters for cubic Gd₂O₃:Eu nanorods were calculated by the Rietveld refinement. SEM and TEM micrographs show that as-obtained Gd(OH)₃:Eu consists of uniform nanorods in high yield with uniform diameters of about 15 nm and lengths of about 50-150 nm. The temperature dependent morphological evolution of Gd₂O₃:Eu without and with CTAB surfactant was studied. FTIR studies reveal that CTAB surfactant plays an important role in converting cubic Gd₂O₃:Eu to hexagonal Gd(OH)₃:Eu. The strong and intense Raman peak at 489 cm⁻¹ has been assigned to A_g mode, which is attributed to the hexagonal phase of Gd₂O₃. The peak at ∼360 cm⁻¹ has been assigned to the combination of F_g and E_g modes, which is mainly attributed to the cubic Gd₂O₃ phase. The shift in frequency and broadening of the Raman modes have been attributed to the decrease in crystallite dimension to the nanometer scale as a result of phonon confinement.     

Fabrication and evolution of Cu nanoparticles in Al2O3 crystal by ion implantation and annealing at different atmospheres

Single crystal Al₂O₃ samples were implanted with 45 keV Cu ion implantation at a dose of 1 × 10¹⁷ ions/cm², and then subjected to furnace annealing in vacuum or with a flow of oxygen gas. Various techniques, such as ultraviolet-visible spectroscopy, X-ray diffraction spectroscopy and atomic force microscopy, have been used to investigate formation of Cu NPs and their evolution. Our results clearly show that the evolution of Cu NPs depends strongly on annealing atmosphere in the temperature range up to 600 °C. Annealing in vacuum only gives rise to a slight change in the size of Cu NPs. No evidence for oxidization of Cu NPs has been revealed. Remarkable modifications in Cu NPs, including the size increase and the effective transformation into CuO NPs, have been observed for the samples annealed at oxygen atmosphere. The results have been tentatively discussed in combination with the role of oxygen from atmosphere in diffusion of Cu atoms towards the surface and its interactions with Cu NPs during annealing.     

Silicon MIS diodes with Cr2O3 nanofilm: Optical, morphological/structural and electronic transport properties

In this work we report the optical, morphological and structural characterization and diode application of Cr₂O₃ nanofilms grown on p-Si substrates by spin coating and annealing process. X-ray diffraction (XRD), non-contact mode atomic force microscopy (NC-AFM), ultraviolet-visible (UV-vis) spectroscopy and photoluminescence (PL) spectroscopy were used for characterization of nanofilms. For Cr₂O₃ nanofilms, the average particle size determined from XRD and NC-AFM measurements was approximately 70 nm. Structure analyses of nanofilms demonstrate that the single phase Cr₂O₃ on silicon substrate is of high a crystalline structure with a dominant in hexagonal (1 1 0) orientation. The morphologic analysis of the films indicates that the films formed from hexagonal nanoparticles are with low roughness and uniform. UV-vis absorption measurements indicate that the band gap of the Cr₂O₃ film is 3.08 eV. The PL measurement shows that the Cr₂O₃ nanofilm has a strong and narrow ultraviolet emission, which facilitates potential applications in future photoelectric nanodevices. Au/Cr₂O₃/p-Si metal/interlayer/semiconductor (MIS) diodes were fabricated for investigation of the electronic properties such as current-voltage and capacitance-voltage. Ideality factor and barrier height for Au//Cr₂O₃/p-Si diode were calculated as 2.15 eV and 0.74 eV, respectively. Also, interfacial state properties of the MIS diode were determined. The interface-state density of the MIS diode was found to vary from 2.90 × 10¹³ eV⁻¹ cm⁻² to 8.45 × 10¹² eV⁻¹ cm⁻².     

Transparent conducting Sn-doped Ga1.4In0.6O3 films prepared on α-Al2O3 (0 0 0 1) by MOCVD

Sn-doped Ga_1.4In_0.6O₃ films have been prepared on α-Al₂O₃ (0 0 0 1) substrates by the metalorganic chemical vapor deposition (MOCVD) method. The Sn-doping was varied from 0% to 7% (atomic ratio). Polycrystalline films with resistivity of 4.9 × 10⁻³Ω cm, carrier concentration of 5.9 × 10¹⁹ cm⁻³ and Hall mobility of 21.4 cm² v⁻¹ s⁻¹ was obtained at 5 at.% of Sn concentration. The average transmittance for the Sn-doped Ga_1.4In_0.6O₃ films in the visible range was over 90%. The bandgap of the films varies from 3.85 to 4.21 eV.     

The magnetoelectric coupling in rhombohedral–tetragonal phases coexisted Bi0.84Ba0.20FeO3

Ba doped Bi_1.04−xBa_xFeO₃ ceramics with x up to 0.30 have been prepared by the tartaric acid modified sol–gel method. The X ray diffraction patterns show that the structure transforms from rhombohedral to tetragonal with increasing the Ba substitution concentration from 10% to 30% and the coexistence of distorted rhombohedral and tetragonal phases in 20% Ba substituted BiFeO₃, which was further confirmed by the Raman spectra. Bi_0.84Ba_0.20FeO₃ exhibits the highest magnetization (1.6 emu/g under magnetic field of 12 kOe) compared with the other samples of different Ba substitution concentration. Significant enhancement of the ferroelectricity has been observed in 20% and 30% Ba substituted BiFeO₃ with saturate polarization close to 6.6 μC/cm² for Bi_0.74Ba_0.30FeO₃. The magnetoelectric coupling of Bi_0.84Ba_0.20FeO₃ has been measured and the maximum decrease of magnetization under magnetic field of 9.8 kOe was about 0.06 emu/g with increasing applied electric field to 11 kV/cm, and the magnetoelectric coefficient is 1.5×10⁻¹² s/m.     

Characterization of single-crystalline In2O3 films deposited on Y-stabilized ZrO2 (1 0 0) substrates by MOCVD

Epitaxial In₂O₃ films have been deposited on Y-stabilized ZrO₂ (YSZ) (1 0 0) substrates by metalorganic chemical vapor deposition (MOCVD). The films were deposited at different substrate temperatures (450-750 °C). The film deposited at 650 °C has the best crystalline quality, and observation of the interface area shows a clear cube-on-cube epitaxial relationship of In₂O₃(1 0 0)||YSZ(1 0 0) with In₂O₃[0 0 1]||YSZ[0 0 1]. The Hall mobility of the single-crystalline In₂O₃ film deposited at 650 °C is as high as 66.5 cm² V⁻¹ s⁻¹ with carrier concentration of 1.5 × 10¹⁹ cm⁻³ and resistivity of 6.3 × 10⁻³ Ω cm. The absolute average transmittance of the obtained films in the visible range exceeds 95%.     

Analysis of rotational structure in the high-resolution infrared spectrum and assignment of vibrational fundamentals of butadiene-2,3-C2

The 2,3-¹³C₂ isotopomer of butadiene was synthesized, and its fundamental vibrational fundamentals were assigned from a study of its infrared and Raman spectra aided with quantum chemical predictions of frequencies, intensities, and Raman depolarization ratios. For two C-type bands in the high-resolution (0.002 cm⁻¹) infrared spectrum, the rotational structure was analyzed. These bands are for ν₁₁ (a_u) at 907.17 cm⁻¹ and for ν₁₂ (a_u) at 523.37 cm⁻¹. Ground state and upper state rotational constants were fitted to Watson-type Hamiltonians with a full quartic set of centrifugal distortion constants and two sextic ones. For the ground state, A₀ = 1.3545088(7) cm⁻¹, B₀ = 0.1469404(1) cm⁻¹, and C₀ = 0.1325838(2)  cm⁻¹. The small inertial defects of butadiene and two ¹³C₂ isotopomers, as well as for five deuterium isotopomers as previously reported, confirm the planarity of the s-trans rotamer of butadiene.     

Intense ultraviolet and blue upconversion emissions in Yb-Tm codoped stoichiometric Y7O6F9 powder

Stoichiometric Y₇O₆F₉ powder codoped with Yb³⁺-Tm³⁺ was synthesized via co-precipitation and subsequent calcining route. The results of X-ray diffraction and transmission electron microscopy reveal that when the calcining temperature is beyond 800 °C, orthorhombic YF₃ nanoparticles can be completely oxidized into orthorhombic Y₇O₆F₉ powder. Under the excitation of a 980 nm laser, Y₇O₆F₉ powder exhibits multicolor UC emission in regions spanning the UV to the NIR. In addition, the upconversion emission intensities of YF₃, Y₇O₆F₉ and Y₂O₃ powders were compared under the same dopant condition (Yb/Tm=5/0.5 mol%). The low phonon energy revealed by Raman spectra helped to understand the high efficient upconversion emission of Y₇O₆F₉ and the main phonon vibration of Y₇O₆F₉ lies at 472 cm⁻¹, which is far lower that of Y₂O₃ (at 708 cm⁻¹). Our results indicate that orthorhombic rare earth ions doped Y₇O₆F₉ is an efficient matrix for UV and blue UC emission, and has potential applications in color displays, anti-counterfeiting and multicolor fluorescent labels.     

Study of molybdenum coordination state and crystallization behavior in MoO3-La2O3-B2O3 glasses by Raman spectroscopy

The ternary MoO₃-La₂O₃-B₂O₃ glasses containing a large amount of MoO₃ (10-50 mol%) are prepared, and their structure and crystallization behavior are examined from the Raman scattering spectrum measurements and X-ray diffraction analyses. It is found that the glass transition and crystallization temperatures and the thermal stability against crystallization decrease with increasing MoO₃ content. It is suggested that the main coordination state of Mo⁶⁺ ions in the glasses is isolated (MoO₄)²⁻ tetrahedral units giving strong Raman bands at 830-860 and 930 cm⁻¹. It is found that the crystalline phases in the crystallized glasses are mainly LaMoBO₆ and LaB₃O₆, and the main crystallization mechanism in MoO₃-La₂O₃-B₂O₃ glasses is surface crystallization. LaMoBO₆ crystals are found to give strong Raman bands at 810-830 and ∼910 cm⁻¹.     

A novel chemical synthesis and characterization of Mn3O4 thin films for supercapacitor application

Mn₃O₄ thin films have been prepared by novel chemical successive ionic layer adsorption and reaction (SILAR) method. Further these films were characterized for their structural, morphological and optical properties by means of X-ray diffraction (XRD), Fourier transform infrared spectrum (FTIR), field emission scanning electron microscopy (FESEM), wettability test and optical absorption studies. The XRD pattern showed that the Mn₃O₄ films exhibit tetragonal hausmannite structure. Formation of manganese oxide compound was confirmed from FTIR studies. The optical absorption showed existence of direct optical band gap of energy 2.30 eV. Mn₃O₄ film surface showed hydrophilic nature with water contact angle of 55°. The supercapacitive properties of Mn₃O₄ thin film investigated in 1 M Na₂SO₄ electrolyte showed maximum supercapacitance of 314 F g⁻¹ at scan rate 5 mV s⁻¹.     

Preparation and characterization of CdS/Si coaxial nanowires

CdS/Si coaxial nanowires were fabricated via a simple one-step thermal evaporation of CdS powder in mass scale. Their crystallinities, general morphologies and detailed microstructures were characterized by using X-ray diffraction, scanning electron microscope, transmission electron microscope and Raman spectra. The CdS core crystallizes in a hexagonal wurtzite structure with lattice constants of a=0.4140 nm and c=0.6719 nm, and the Si shell is amorphous. Five Raman peaks from the CdS core were observed. They are 1LO at 305 cm⁻¹, 2LO at 601 cm⁻¹, A₁-TO at 212 cm⁻¹, E₁-TO at 234 cm⁻¹, and E₂ at 252 cm⁻¹. Photoluminescence measurements show that the nanowires have two emission bands around 510 and 590 nm, which originate from the intrinsic transitions of CdS cores and the amorphous Si shells, respectively.     

Oxygen in Ge crystals grown by the B2O3 encapsulated Czochralski method

Local vibrations of oxygen in Ge crystals grown by the Czochralski method adopting liquid-B₂O₃ encapsulation and GeO₂ powder doping were investigated by Fourier-transform infrared spectroscopy. Strong absorption peaks at 855 cm⁻¹, originating in local vibration of interstitially dissolved oxygen O_i as Ge–O_i–Ge quasi-molecules, developed depending on the doped amount of GeO₂. Similarly, an absorption peak related to the combined vibration of Ge–O_i–Ge was found at 1264 cm⁻¹ and the conversion factor from the peak intensity to the oxygen concentration was evaluated to be 1.15×10¹⁹ cm⁻². By prolonged annealing at 350 °C an absorption peak developed at 780 cm⁻¹, indicating formation of oxygen-related thermal donors. From the variations of carrier density and oxygen concentration, one donor was found to possess about 15 O_i atoms.