Probing Field Emission from Boron Carbide Nanowires

High density boron carbide nanowires are grown by an improved carbon thermal reduction technique. Transmission electron microscopy and electron energy lose spectroscopy of the sample show that the synthesized nanowires are B4 C with good crystallization. The field emission measurement for an individual boron nanowire is performed by using a Pt tip installed in the focused ion beam system. A field emission current with enhancement factor of 10^6 is observed and the evolution process during emission is also carefully studied. Furthermore, a two-step field emission with stable emission current density is found from the high-density nanowire film. Our results together suggest that boron carbide nanowires are promising candidates for electron emission nanodevices.     

Cesium ion emission from a graphene surface on iridium in a high-intensity electric field

Features of cesium ion emission from a graphene film on iridium in a 10⁷–10⁸ V cm^?1 electric field of are studied. Field electron and desorption images demonstrate that the film consists of regions (islands) 20–100 nm in size. Intercalated cesium lies under the film. There is continuous desorption of cesium ions from the defects in the graphene film and the regions of where islands abut one another. Cesium ions arrive at the desorption sites from the intercalated state.     

Efficient field emission from coiled carbon nano/microfiber on copper substrate by dc-PECVD

Crystalline coiled carbon nano/micro fibers in thin film form have been synthesized via direct current plasma enhanced chemical vapor deposition (PECVD) on copper substrates with acetylene as a carbon precursor at 10 mbar pressure and 750 °C substrate temperature. The as-prepared samples were characterized by X-ray diffraction (XRD) analysis, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). XRD pattern as well as selected area electron diffraction (SAED) pattern showed that the samples were crystalline in nature. SEM and HRTEM studies showed that as synthesized coiled carbon fibers are having average diameter ∼100 nm and are several micrometers in length. The as-prepared samples showed moderately good electron field emission properties with a turn-on field as low as 1.96 V/μm for an inter-electrode distance 220 μm. The variation of field emission properties with inter-electrode distance has been studied in detail. The field emission properties of the coiled carbon fibrous thin films are compared with that of crystalline multiwalled carbon nanotubes and other carbon nanostructures.     

（Ti,Al）N Film on Normalized T8 Carbon Tool Steel Prepared by Pulsed High Energy Density Plasma Technique

Under optimized operating parameters, a hard and wear resistant （Ti,Al）N film is prepared on a normalized T8 carbon tool steel substrate by using pulsed high energy density plasma technique. Microstructure and composition of the film are analysed by x-ray diffraction, x-ray photoelectron spectroscopy, Auger electron spectroscopy and scanning electron microscopy. Hardness profile and tribological properties of the film are tested with nano- indenter and ring-on-ring wear tester, respectively. The tested results show that the microstructure of the film is dense ahd uniform and is mainly composed of （Ti,Al）N and A1N hard phases. A wide transition interface exists between the film and the normalized T8 carbon tool steel substrate. Thickness of the film is about lO00nm and mean hardness value of the film is about 26 GPa. Under dry sliding wear test conditions, relative wear resistance of the （Ti, Al）N film is approximately 9 times higher than that of the hardened T8 carbon tool steel reference sample. Meanwhile, the （Ti,Al）N film has low and stable friction coefficient compared with the hardened T8 carbon tool steel reference sample.     

Room-temperature electroluminescence from hydrogenated amorphous carbon nitride film

Electroluminescence devices in the structure of anode/poly(methylphenylsilane)/hydrogenated amorphous carbon nitride/cathode have been fabricated. A strong visible emission is observed at room temperature and the emission intensity increases with the increase of the current density. In this device, poly(methylphenylsilane) acts as a hole transporting and electron blocking layer. It is evidenced that the emission region is near the interface between the poly(methylphenylsilane) and hydrogenated amorphous carbon nitride layers. The electroluminescence properties are discussed and compared with the photoluminescence of the hydrogenated amorphous carbon nitride film.     

Solid phase epitaxy of Ge films on CaF2/Si(1 1 1)

At room temperature deposited Ge films (thickness < 3 nm) homogeneously wet CaF₂/Si(1 1 1). The films are crystalline but exhibit granular structure. The grain size decreases with increasing film thickness. The quality of the homogeneous films is improved by annealing up to 200 °C. Ge films break up into islands if higher annealing temperatures are used as demonstrated combining spot profile analysis low energy electron diffraction (SPA-LEED) with auger electron spectroscopy (AES). Annealing up to 600 °C reduces the lateral size of the Ge islands while the surface fraction covered by Ge islands is constant. The CaF₂ film is decomposed if higher annealing temperatures are used. This effect is probably due to the formation of GeF_x complexes which desorb at these temperatures.     

Properties of low-refractive-index films obtained by the close-spaced vapor transport technique under the sublimation of graphite in a quasi-closed volume

The properties of low-refractive-index carbon films obtained by close-spaced vapor transport at graphite sublimation are studied. The optical properties of the films are investigated by monochromatic multiple-angle ellipsometry, and their morphology is examined by AFM. It is found that the films have a columnar structure with a background surface roughness of about 1 nm. In addition, the surface of the film contains islands up to 50 nm in height with a footprint of ≈200 nm. A low-refractive-index carbon film deposited by close-spaced vapor transport on silicon tips is found to decrease the field emission threshold and drastically raise the current.     

Effects of microwave plasma treatment on the field emission properties of printed carbon nanotubes/Ag nano-particles films

The effects of Ar microwave plasma treatment on field emission properties of the printed carbon nanotubes (CNTs) cathode films using Ag nano-particles as binder were investigated. The field emission J-E characteristics were measured at varied plasma treatment time. Significant improvement in emission current density, emission stability and uniformity were achieved for the Ar treated CNTs films, even though the plasma treatment increased the turn on electric field slightly. High-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy revealed the microstructural changes of CNTs after the plasma treatment. The improved field emission properties of CNTs film can be attributed to the generation of a high density of structural defects after treatment, which increased greatly the possible emission active sites. Besides, the formation of the sharpened and open-ended CNTs tips is all helpful for improving the field emission properties of the treated CNTs.     

Rehybridization of the atomic orbitals and the field electron emission from nanostructured carbon

The field electron emission, structural features, and electronic properties of carbon films obtained by chemical vapor deposition were experimentally studied. It is shown that the field electron emission from the films composed of spatially oriented carbon nanotubes and platelike graphite nanocrystals is observed for the electric field strength lower by one to two orders of magnitude as compared to the values characteristic of the metal emitters. Experimental data reported for the first time are indicative of a local decrease in the electron work function in such carbon film materials as compared to that in graphite. A model of the emission center is proposed and a mechanism of the field electron emission from nanostructured carbon is described.     

Photon mapping of MgO thin films with an STM

The light emission from an STM junction consisting of an MgO thin film on Mo(0 0 1) and an Au tip is analyzed with respect to its spatial distribution for various excitation conditions. The spectral characteristic of the light is compatible with an emission mechanism mediated by tip-induced plasmons that are excited by inelastic electron tunneling involving field-emission resonances in the tip-sample gap. The dependence of field-emission resonances on the MgO work function allows the controlled stimulation of differently thick oxide islands in the photon maps by changing the sample bias.     

Role of the Metal/Semiconductor interface in quantum size effects: Pb /Si(111)

Self-organized islands of uniform heights can form at low temperatures on metal/semiconductor systems as a result of quantum size effects, i.e., the occupation of discrete electron energy levels in the film. We compare the growth mode on two different substrates [Si(111)- (7x7) vs Si(111)- Pb(sqrt[3]xsqrt[3] )] with spot profile analysis low-energy electron diffraction. For the same growth conditions (of coverage and temperature) 7-step islands are the most stable islands on the (7x7) phase, while 5-step (but larger islands) are the most stable islands on the (sqrt[3]xsqrt[3] ). A theoretical calculation suggests that the height selection on the two interfaces can be attributed to the amount of charge transfer at the interface.     

Electron emission degradation of nano-structured sp^2-bonded amorphous carbon films

The initial field electron emission degradation behaviour of original nano-structured sp^2-bonded amorphous carbon films has been observed, which can be attributed to the increase of the work function of the film in the field emission process analysed using a Fowler-Nordheim plot. The possible reason for the change of work function is suggested to be the desorption of hydrogen from the original hydrogen termination film surface due to field emission current-induced local heating. For the explanation of the emission degradation behaviour of the nano-structured sp2-bonded amorphous carbon film, a cluster model with a series of graphite （0001） basal surfaces has been presented, and the theoretical calculations have been performed to investigate work functions of graphite （0001） surfaces with different hydrogen atom and ion chemisorption sites by using first principles method based on density functional theory-local density approximation.     

Field emission properties and surface structure of nickel containing amorphous carbon

Nickel containing amorphous carbon (a-C:Ni) films have been deposited by filtered cathodic vacuum arc (FCVA) technique by introducing pure nickel into the graphite target. The field electron emission property of a-C:Ni was improved when compared to that of pure tetrahedral amorphous carbon (ta-C) by FCVA. The emission threshold field of a-C:Ni film is about 5 V μm⁻¹, whilst the threshold field of the ta-C film is about 13 V μm⁻¹. Raman spectroscopy suggests that the sp² clusters in the carbon film increase both in size and number when Ni is introduced. However, the emission was found to degrade to threshold fields beyond 20 V μm⁻¹ after the a-C:Ni film was left in ambient for a week. This observation is attributed to surface absorption of oxygen on the a-C:Ni film, as determined by X-ray Photoelectron Spectroscopy.     

Field emission properties of electrophoretic deposition carbon nanotubes film

The field emission properties of electrophoretic deposition(EPD) carbon nanotubes (CNTs) film have been improved by depositing CNTs onto the titanium (Ti)-coated Si substrate, followed by vacuum annealing at 900 °C for 2 h, and the enhanced emission mechanism has been studied using X-ray diffraction (XRD), scanning electron microscope (SEM) and Raman spectroscopy. Field emission measurements showed that the threshold electric field was decreased and the emission current stability was improved compared to that of EPD CNTs film on bare Si substrate. XRD and Raman spectroscopy investigations revealed that vacuum annealing treatment not only decreased the structural defects of CNTs but made a titanium carbide interfacial layer formed between CNTs and substrate. The field emission enhancement could be attributed to the improved graphitization of CNTs and the improved contact properties between CNTs and substrate including electrical conductivity and adhesive strength due to the formed conductive titanium carbide.     

Electronic properties and field emission of carbon nanotube films treated by hydrogen plasma

Large-scale and very even multi-wall carbon nanotube (MWNT) films have been obtained at room temperature by an electrophoresis deposition technique. The characterization, by means of scanning electron microscopy, transmission electron microscopy, high-resolution transmission electron microscopy, and micro-Raman spectroscopy, shows that the MWNTs with hydrogen-plasma (HP) treatment are covered by onion-like nanolumps, and three-dimensional multiple-way-connected nanotube webs are formed. The electronic property of the treated MWNT film is converted from semiconducting to metallic. The field-emission test indicates that the HP-treated MWNT film has a low threshold of 1.1 V/m (at 0.1 A/cm²), a high emission light spot density of about 10⁵ cm^-2, and a stable and suitable emission current. The conversion mechanism of the treated carbon nanotube structure and the reason for the change of the electronic and field-emission characteristics of the MWNT films are discussed. PACS 81.07.De; 82.33.Xj; 85.45.Db     

Preparation of nanocone ZnO thin film and its aging effect of photoluminescence

In this work, a nanocone ZnO thin film was prepared by electron beam evaporation on a Si (1 0 0) substrate. The structural properties of the film were investigated by X-ray diffraction (XRD), atomic force microscopy and laser Raman scattering, respectively. The aging effect of the nanocone ZnO thin film was studied by photoluminescence spectra. The structural analyses show that the prepared ZnO thin film has a hexagonal wurtzite structure and is preferentially oriented along the c-axis perpendicular to the substrate surface. The photoluminescence spectra show that with the increase of aging time, the green emission of the nanocone ZnO thin film gradually decreases while the ultraviolet emission somewhat increases. The reason for this phenomenon is likely that the green-emission-related oxygen vacancies in the film are gradually filled up. The Raman scattering analyses also suggest that the intensity of the Raman peak related to oxygen vacancies in the nanocone ZnO thin film declines after the film is aged in air for a year. Therefore, the authors think the green emission is mainly connected with oxygen vacancy defects.     

Immobilization of pyrene via diethylenetriamine on quartz plate surface for recognition of dicarboxylic acids

A novel photo-luminescence film has been prepared by immobilizing pyrene on a quartz plate surface via diethylenetriamine. Imino structure was intentionally introduced into the long flexible spacer due to their hydrogen bond forming abilities with carboxylic acids. It has been found that the film shows combined monomer and excimer emission of pyrene both in wet and dry states. Steady-state and time-resolved fluorescence emission measurements demonstrated that the excimer emission mainly came from direct excitation of ground state dimers, and/or monomers in aggregated state. The structures of the excimers formed during the excitation are mixtures of “standard excimers” and “distorted excimers” of the fluorophore moieties. Fluorescence lifetime measurements showed that the decay of the film is complex, and a four exponential fit is necessary for getting a satisfied result. The photophysical behavior of the present film could be rationalized by employing the model proposed before. Sensing property studies showed that the emission of the film is sensitive to the presence of dicarboxylic acids, including ethanedioic acid, malonic acid, etc. In contrast, presence of monocarboxylic acids, such as formic acid and acetic acid, had little effect upon the fluorescence emission of the film. Compared with the films taking ethylenediamine or 1,3-diaminopropane as their spacer component, introduction of diethylenetriamine into the spacer improved the performance of the film greatly. In addition, the sensing process is reversible, and the film is stable within a number of months provided it is properly preserved. These characteristics showed that the film is worthwhile for further exploration.     

Photostimulation of conductivity and electronic properties of field-emission nanocarbon coatings on silicon

The electronic structure of island carbon films on silicon, which are capable of low-voltage field electron emission (at the mean electric-field strength above several hundreds of V/mm), have been investigated. It has been shown by tunnel spectroscopy that islands of these coatings are characterized by a continuous spectrum of the allowed delocalized states near the Fermi level, i.e., they contain carbon in the sp ² state. The photoconductivity of the coatings under study has been observed. Based on the current and spectral characteristics of this phenomenon, it has been shown that islands are separated from each other by tunnel barriers and from the substrate by a Schottky barrier.     

Field emission characteristic of screen-printed carbon nanotube cathode

The fabrication of carbon nanotube emitters with excellent emission properties is described. The multi-walled carbon nanotubes (MWNTs) produced by chemical vapor deposition (CVD) method were purified with oxidation method and mixed with organic binding pastes and then screen-printed on glass substrates with ITO film. We applied anode voltage gradually to refine the emission behavior of the emitter by cleaning the top surface of screen-printed carbon nanotubes (CNTs). The density of the carbon nanotubes is about 2.5×10⁸/cm². Diode field emission experiments were performed in dynamic vacuum system to study the emission current, the emission uniformity, etc. Bright and stable character emission images were obtained in the diode structure and the emission current could approach 1 mA/cm².     

Physical ambiguity of the notion of the solubility limit by the example of its determination using the formation of graphene on the surface in the Re-C system

Results obtained during the determination of the solubility limit of carbon in metal based on the detection of the time instant of the nucleation of the new phase, graphene, have been considered. Graphene is easily detected by the surface-sensitive methods of thermionic emission and electron Auger spectroscopy. It has been shown that the nucleation of the first graphene islands and the formation of the graphene monolayer covering the whole surface and even the multilayer graphite film on it can be used as the time instant of the phase transition depending on the sensitivity of the method. The solubility limits differ by many times depending on the determination method. This indicates the physical ambiguity of this physical characteristic of the double systems analogous in physical meaning to the pressure of the saturated vapor for the phase transitions in the one-component systems.