Self-organized transformation to polyaniline nanowires by pulsed energetic electron irradiation in a plasma focus device

An ingenious method for fabricating network of polyaniline nanowires at room temperature in microsecond timescale is demonstrated by using the pulsed electron beam of a plasma focus device. The electron beam of the plasma focus device having a wide range of energies (10-200 keV) was irradiated on to the freestanding polyaniline film. The growth of polyaniline nanowires on the surface of film sample is confirmed by field emission scanning electron microscope images showing nanowires of about 50-80 nm in diameter and up to few tens of micrometers in length.     

Effect of cathode structure on neutron yield performance of a miniature plasma focus device

In this Letter we report the effect of two different cathode structures - tubular and squirrel cage, on neutron output from a miniature plasma focus device. The squirrel cage cathode is typical of most DPF sources, with an outer, tubular envelope that serves as a vacuum housing, but does not carry current. The tubular cathode carries the return current and also serves as the vacuum envelope, thereby minimizing the size of the DPF head. The maximum average neutron yield of (1.82±0.52)×¹⁰⁵ n/shot for the tubular cathode at 4 mbar was enhanced to (1.15±0.2)×¹⁰⁶ n/shot with squirrel cage cathode at 6 mbar operation. These results are explained on the basis of a current sheath loading/mass choking effect. The penalty for using a non-transparent cathode negates the advantage of the smaller size of the DPF head.     

Time resolved studies on X-rays and charged particles emission from a low energy plasma focus device

The time resolved studies on soft X-ray, hard X-ray, electron beam and ion beam emissions from a low energy plasma focus device are carried out simultaneously by employing a photodiode X-ray spectrometer, a scintillator photomultiplier tube, a combination of Faraday cup and Rogowski coil assembly and a biased Faraday cup, respectively. The soft X-ray is seen to be emitted in short multiple pulses corresponding to different pinch stages where as it is a single for hard X-ray, which corresponds to only maximum pinch stage. Similarly, multiple pulses of electron beam is found, which also corresponds to different pinch stages and these pulses are analogous with the soft X-ray pulses. The effective hard X-ray photon energy is estimated by foil absorption technique and found to be around 110 keV, which is consistent with the observed electron beam energy distribution. The simultaneous investigation of the electron and ion beam shows that both are accelerated by the same local field generated during the pinching process. The detailed results of time resolved studies on various radiations are incorporated in this Letter.     

Optimization of plasma parameters for high rate deposition of titanium nitride films as protective coating on bell-metal by reactive sputtering in cylindrical magnetron device

Nano-structured titanium nitride (TiN) thin film coating is deposited by reactive sputtering in cylindrical magnetron device in argon and nitrogen gas mixtures at low temperature. This method of deposition using DC cylindrical magnetron configuration provides high uniform yield of film coating over large substrate area of different shapes desirous for various technological applications. The influence of nitrogen gas on the properties of TiN thin film as suitable surface protective coating on bell-metal has been studied. Structural morphological study of the deposited thin film carried out by employing X-ray diffraction exhibits a strong (2 0 0) lattice texture corresponding to TiN in single phase. The surface morphology of the film coating is studied using scanning electron microscope and atomic force microscope techniques. The optimized condition for the deposition of good quality TiN film coating is found to be at Ar:N₂ gas partial pressure ratio of 1:1. This coating of TiN serves a dual purpose of providing an anti-corrosive and hard protective layer over the bell-metal surface which is used for various commercial applications. The TiN film's radiant golden colour at proper deposition condition makes it a very suitable candidate for decorative applications.     

Effect of electron emission and potential perturbations of a hot filament in high voltage pulsed glow discharge

The high voltage dc pulsed glow discharge can be ignited earlier by putting an electron emitting filament in the plasma chamber. The electrons emitted from the filament act as a seed and can cause earlier ignition. The potential of the hot filament shows some periodic positive perturbations (electron loss signals) when it is kept floating in the plasma chamber. It is observed that the positive perturbations disappear as potential difference between the plasma and the filament is made smaller by directly connecting the filament to the grounded chamber.     

Optical and mechanical properties of alumina films fabricated on Kapton polymer by plasma immersion ion implantation and deposition using different biases

Alumina films are fabricated on Kapton polymer by aluminum plasma immersion ion implantation and deposition in an oxidizing ambient and the effects of the bias voltage on the film properties are investigated. Rutherford backscattering spectrometry (RBS) reveals successful deposition of alumina films on the polymer surface and that the O to Al ratio is higher than that of stoichiometric Al₂O₃. The thickness of the modified layers decreases from 200 to 120 nm when the bias voltage is increased from 5 to 20 kV. Our results indicate that higher bombardment energy may lead to higher crack resistance and better film adhesion. However, a higher sample bias degrades the optical properties of the films as indicated by the higher absorbance and lower energy band gap. Therefore, the processing voltage must be optimized to yield a protective layer with the appropriate thickness, superior optical properties, as well as high crack resistance.     

Effects of O2 and H2O plasma immersion ion implantation on surface chemical composition and surface energy of poly vinyl chloride

Oxygen and water plasma immersion ion implantation (PIII) was used to modify poly vinyl chloride (PVC) to enhance oxygen-containing surface functional groups for more effective grafting. The modified surfaces were characterized by X-ray photoelectron spectroscopy (XPS), attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR), and contact angle measurements. Our experimental results show that both oxygen and water PIII can greatly improve the O to C ratios on the surface. The optimal plasma processing conditions differ for the two treatments. The hydrophilicity and surface energy of the plasma-implanted PVC are also improved significantly. Our results indicate that O₂ and H₂O PIII increase both the polar and dispersion interactions and consequently the surface energy. It can be explained by the large amount of oxygen introduced to the surface and that many CC bonds are transformed into more polar oxygen containing functional groups.     

Laser-produced plasma ion characteristics in laser ablation of lithium manganate

Laser ablation is widely used to assist in the fabrication of prototype lithium manganate (LiMn₂O₄) thin film structures for Li-ion battery electrodes via the pulsed laser deposition technique. However, films can be considerably Li and/or O deficient, depending the deposition conditions used. Here we present data on the ionic component of laser-produced plasma in laser ablation of lithium manganate with ns excimer laser. Plasma was monitored using an electrical Langmuir ion probe, in time-of-flight mode in conjunction with mass spectrometry to identify the dominant ionic species. Ablation in vacuum at ∼2.5 J cm⁻² revealed the plasma's ionic component was composed primarily of singly charged Li and Mn ions. The time-of-flight data indicates significant deceleration of the plasma when ablation is carried out in an oxygen background gas pressure of the order of 10 Pa. The implications for thin film growth are considered in terms of the possible gas phase interactions and/or thin film re-sputtering yield.     

Crystallization of amorphous zirconium thin film using ion implantation by a plasma focus of 1 kJ

In this work preliminary results of amorphous zirconium crystallization using ion beam pulses are presented. Energetic argon- and oxygen-ion beams generated by a plasma focus device were used to promote crystallization on amorphous ZrO₂-2.5 mol% Y₂O₃ film deposited by chemical solution deposition onto silica glass substrate. The films were burnt at 370 °C for 1 h in normal atmosphere previous to plasma irradiation. The irradiation was performed by means of successive pulses of ion beams. The evolution of the surface morphology and crystallization was followed by AFM and X-rays diffraction in a grazing incidence asymmetric Bragg geometry (GIAB), respectively. Argon-irradiated films showed highly nucleated cubic zirconia after 10 pulses. On the other hand, oxygen-irradiated films showed a delayed and less extensive cubic nucleation, but a more ordered structure and well-defined grains.     

Composition, structure and morphology of oxide layers formed on austenitic stainless steel by oxygen plasma immersion ion implantation

Oxygen ions were implanted in to austenitic stainless steel by plasma immersion ion implantation at 400 °C. The implanted samples were characterized by XPS, GIXRD, micro-Raman, AFM, optical and scanning electron microscopies. XPS studies showed the presence of Fe in elemental, as Fe²⁺ in oxide form and as Fe³⁺ in the form of oxyhydroxides in the substrate. Iron was present in the oxidation states of Fe²⁺ and Fe³⁺ in the implanted samples. Cr and Mn were present as Cr³⁺ and Mn²⁺, respectively, in both the substrate and implanted samples. Nickel remained unaffected by implantation. GIXRD and micro-Raman studies showed the oxide to be a mixture of spinel and corundum structures. Optical and AFM images showed an island structure on underlying oxide. This island structure was preserved at different thicknesses. Further, near the grain boundaries more oxide growth was found. This is explained on the basis of faster diffusion of oxygen in the grain boundary regions. Measurement of total hemispherical optical aborptance, α and emittance, ? of the implanted sample show that it has good solar selective properties.     

Tribological changes on SS304 stainless steel induced by nitrogen plasma immersion ion implantation with and without auxiliary heating

In order to achieve quite thick treated layers with reasonable thickness uniformity in SS304 steel, the plasma immersion ion implantation (PIII) process was run in high-temperature, up to 350 °C, to induce high thermal diffusion but avoid the white layer formation. In these experiments, we heated the sample-holder with a shielded resistive wire properly wound around it and subjected the SS samples to nitrogen glow discharge PIII with relatively low voltages (10 kV) in different temperatures. We also treated the SS samples by the traditional PIII method, slowly increasing the high voltage pulse intensities, until 14 kV at the end of processing, reaching temperatures of up to 350 °C. These modes of treatments were compared with respect to nitrogen implantation profiles, X-ray diffraction, tribology and mechanical properties. X-ray diffraction results indicated a much higher efficiency of auxiliary heated PIII mode compared to the ordinary PIII. Very prominent γ_N peaks were observed for the first mode, indicating large concentration of nitrogen in thick layers, confirmed by the nitrogen profiles measured by GDOS and AES. Improved mechanical and tribological properties were obtained for SS304 samples treated by the PIII with auxiliary heating, more than for ordinary PIII. Hardness was enhanced by up to 2.77 times, as seen by nanoindentation tests.     

Experimental investigation of discharge characteristics in enhanced glow discharge plasma immersion ion implantation

In enhanced glow discharge plasma immersion ion implantation (EGD-PIII) that involves a small pointed anode and large area tabular cathode, the high negative substrate bias not only acts as the plasma producer but also supplies the implantation voltage. Consequently, an electric field is created to focus the electrons and the electron focusing field in turn enhances the glow discharge process. In this work, the discharge characteristics of EGD-PIII are investigated experimentally. The discharge initiation and extinction characteristics during pulsed biasing are discussed. The duration of the post pulse-off plasma is explained from the viewpoint of particle motion and experimentally verified by employing an auxiliary disk. Our experiments show that a dual-pulse method may be utilized to determine the remnant plasma.     

High resolution quantitative SIMS analysis of shallow boron implants in silicon using a bevel and image approach

Secondary ion mass spectrometry (SIMS) is frequently used as the preferred tool for dopant profiling due to its sensitivity and depth resolution. However, as dopant profiles become shallower most, if not all of the implant profile lies in the pre-equilibrium or transient region of an SIMS depth profile. In this region sputter yield and ionisation rate vary making accurate quantification of the implant profile very difficult. These problems can be reduced through the use of much lower beam energies or oxygen flooding of the sample. However, most SIMS instruments do not have these capabilities. In this paper an alternative technique for producing an accurate depth profile of a shallow implant, using existing SIMS technology is presented.Through the fabrication of bevels with very small slope angles on a shallow boron implanted silicon via a chemical etch, SIMS ion imaging is performed on the exposed surface. Ion image data is then summed, and in conjunction with accurate measurement of the bevel morphology, a shallow boron implant profile produced. The ‘bevel-image’ profile compares very well with a profile obtained using a 1 keV oxygen beam. To ensure a good dynamic range on the ‘bevel-image’ profile it is important to clean the bevel with a HF etch, prior to imaging.     

Temperature behavior of implanted and pulsed laser irradiated GaAs

Recent studies have shown that the Low-Power Pulsed-Laser Annealing (LPPLA) of ion-implanted GaAs specimens can be realized in a power-density window in which a complete structural reordering is guaranted. As the experimentally employed conditions allow us to describe the theoretical problem in an unidimensional space domain, we describe here a method to investigate the in-depth temperature behavior during the low-power pulsed-laser irradiation of ion-implanted semiconductors. The application of this method to GaAs specimens shows that the upper limit of the energy density window is connected with the exceeding of the critical temperature T _c below which the As evaporation rate is negligible.     

Surface modification of γ-TiAl alloys by acetylene plasma deposition

Surfaces of two γ-TiAl alloys, Ti-47 at% Al-2at% Nb-2 at% Cr (MJ12) and Ti-47 at% Al-2 at% Nb-2 at% Mn + 0.8 at% TiB₂ (MJ47), have been modified by acetylene plasma deposition at bias voltages of −4, −5 and −6 kV for 3.6 × 10³ s (1 h) and 1.44 × 10⁴ s (4 h). Knoop hardness (HK) of the alloys is increased with the increase of bias voltage and prolonged time for the deposition. HK of MJ12 and MJ47 deposited at −6 kV for 1.44 × 10⁴ s is, respectively, 3.36 and 3.32 times as hard as the untreated alloys. SEM and AFM analyses show that the deposited alloys compose of a number of nano-dots which reflect their surface properties. The phases analyzed by XRD are in accord with the elements analyzed by EDX.     

Characterization of the ion cathode fall region in relation to the growth rate in plasma sputter deposition

In plasma-assisted magnetron sputtering, the ion cathode fall region is the part of the plasma where the DC electric field and ion current evolve from zero to their maximum values at the cathode. These quantities are straightforwardly related to the deposition rate of the sputtered material. In this work we derive simple relations for the measurable axially averaged values of the ion density and the ion current at the ion cathode fall region and relate them with the deposition rate. These relations have been tested experimentally in the case of an argon plasma in a magnetron sputtering system devoted to depositing amorphous silicon. Using a movable Langmuir probe, the profiles of the plasma potential and ion density were measured along an axis perpendicularly to the cathode and in front of the so-called race-track. The deposition rate of silicon, under different conditions of pressure and input power, has been found to compare well with those determined with the relations derived.     

Effect of substrate temperature on the structural and optical properties of ZnO and Al-doped ZnO thin films prepared by dc magnetron sputtering

ZnO and Al-doped ZnO(ZAO) thin films have been prepared on glass substrates by direct current (dc) magnetron sputtering from 99.99% pure Zn metallic and ZnO:3 wt%Al₂O₃ ceramic targets, the effects of substrate temperature on the crystallization behavior and optical properties of the films have been studied. It shows that the surface morphologies of ZAO films exhibit difference from that of ZnO films, while their preferential crystalline growth orientation revealed by X-ray diffraction remains always the (0 0 2). The optical transmittance and photoluminescence (PL) spectra of both ZnO and ZAO films are obviously influenced by the substrate temperature. All films exhibit a transmittance higher than 86% in the visible region, while the optical transmittance of ZAO films is slightly smaller than that of ZnO films. More significantly, Al-doping leads to a larger optical band gap (E_g) of the films. It is found from the PL measurement that near-band-edge (NBE) emission and deep-level (DL) emission are observed in pure ZnO thin films. However, when Al was doped into thin films, the DL emission of the thin films is depressed. As the substrate temperature increases, the peak of NBE emission has a blueshift to region of higher photon energy, which shows a trend similar to the E_g in optical transmittance measurement.     

Enhanced corrosion resistance of Zr coating on biomedical TiNi alloy prepared by plasma immersion ion implantation and deposition

Zirconium film was prepared on TiNi alloy by plasma immersion ion implantation and deposition (PIIID) technique to enhance its corrosion resistance and prolong its working lifetime. The atomic force microscopy (AFM) results show that the film was relatively smooth with the root mean square roughness being 9.166 nm. The X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) results indicate that the implant element of Zr was oxidation partialness. The potentiodynamic polarization measurements in the Hank's solution at 37 °C show that the corrosion resistance of the alloy was improved by the Zr coating film and the atomic absorption spectrometry (AAS) tests also indicate that Ni ion concentration released from the substrate in the Hank's solution after the polarization test was reduced greatly, in comparison to the unmodified TiNi alloy sample.     

Radiographic method for measuring the continuum hard X-ray output spectrum of a Plasma Focus device

A radiographic method is proposed and then applied to infer the continuum part of the hard X-ray spectrum of a 4.7 kJ Plasma Focus from differential absorption measurements on metals. Copper, nickel, titanium and silver samples with thicknesses spanning between 0.1 and 10 mm were employed as filters. The X-ray radiation was detected using a standard radiographic screen-film system. The results show the presence of a dominant peak around 75 keV with significant spectral components in the range of 40 to 200 keV. The method is easy to follow, inexpensive, and allows for calibrated, single shot, spectral measurements.     

Useful vacancies: Positron beam interrogation of fluorine-vacancy complexes in semiconductor device structures

The formation, migration and agglomeration in silicon of fluorine-vacancy complexes have been monitored by single-detector Doppler broadening spectroscopy. After electronics engineers found that fluorine ion implantation effectively eliminated the transient-enhanced diffusion of dopants in the creation of ultra-shallow junctions, a vital step in the further miniaturization of device structures, positron beams have played a pivotal role in providing an insight into the mechanisms underlying this phenomenon, being able to detect FV complexes in implanted and annealed samples. Secondary Ion Mass Spectrometry has provided complementary information on fluorine concentrations so that the nature of the F_mV_n complexes can be further assessed. New results on Si and SiGe structures are presented.