PBD在稀土配合物与PVK混合体系电致发光中的作用

研究了PBD以较低浓度与铽配合物[Tb(m-MBA)₃phen]₂·2H₂O、PVK共掺杂体系的电致发光,制作了两类电致发光器件：ITO/PVK:Tb complex/PBD/LiF/Al,ITO/PVK：Tb complex:PBD/PBD/LiF/Al。在共掺杂的发光层中铽配合物的电致发光来源于两个途径,一个是由PVK到铽配合物的能量传递,另一个是电子和空穴在铽配合物上直接复合发光。改变PBD在发光层中的掺杂比例,制得一系列器件,通过对其光谱和亮度的研究,发现PBD在较低浓度掺杂时器件的稳定性和亮度随掺杂浓度的增加而降低。通过分析认为PBD的加入对给体(PVK)到受体(Tb complex)的能量传递效率影响较小,主要是由于PBD的加入使得电子和空穴在PVK链间的跳跃受到限制,使在由PVK、铽配合物和PBD三者掺杂组成的发光层中,注入的电子和空穴不能有效地在铽配合物上复合,这样就会减少激子在铽配合物上直接复合的概率,而造成器件的亮度和效率降低。     

Efficiency improvement of red organic light-emitting diodes using a blue phosphorescent exciton blocking layer

Quantum efficiency of red organic light-emitting diodes was improved using a blue phosphorescent emitting layer as an exciton blocking layer. Compared with 8.1% quantum efficiency of standard devices without an exciton blocking layer, high quantum efficiency of 14.1% was obtained using a blue phosphorescent emitting layer between the hole transport layer and the red emitting layer.     

铽配合物与PVK混合体系的发光研究

研究了铽配合物[Tb(m-MBA)₃phen]₂·2H₂O与PVK共掺杂体系的激发光谱和光致发光谱, 发现两者之间存在着能量转移,由于PVK的发射光谱和铽配合物的激发光谱重叠很小,两者之间发生Frester能量传递的几率很小,铽的发光主要是由于铽配合物的配体俘获了电子-空穴对使配体受到激发而导致的,在电致发光中, PVK的发光完全被抑制, 与光致发光的表现不同, 这是由于两种发光(光致和电致)机理不同造成的。     

Anomalous temperature-dependent behaviors of electroluminescence phenomena in disordered ITO/PEDOT/PF/Ca/Al polymer light-emitting diodes

In this study we systematically investigated the anomalous Berthelot-type optical property dependence of the electroluminescence (EL) that occurs in polymer light-emitting diode (PLED) structures. Devices were operated at 0.1 and 0.5 mA over a temperature range from 300 to 20 K. Initially, the emission intensity increased as the temperature decreased, until a maximum was reached at the turning-point temperature T_t. After this, the intensity decreased with further decrease of temperature down to 20 K. A smaller reduction in intensity was exhibited by the device with 0.5 mA, a larger one exhibited by the device with 0.1 mA. The strong electron-electron scattering arising from high excitation, high microcrystalline randomization and high hopping frequency led to the corresponding dominance of the Berthelot-type process by a large T_t. It can be seen in the Arrhenius plot of the integrated EL intensity that a smaller activation energy can be expected to facilitate the redistribution of the thermal carriers, overcoming the energy barrier and the large degradation of luminescence. This results in not only better than carrier confinement, but also enhances the quantum efficiency of PLED structures requiring lower excitation.     

Phosphorescent white organic light-emitting diodes with stable white color depending on luminance

We fabricated simple and color-stable phosphorescent white organic light-emitting diodes (OLEDs) without an interlayer using a single host of 1,3-bis(9-carbazolyl)benzene with iridium(III) bis[(4,6-difluorophenyl) pyridinato-N,C2’]picolinate and bis(1-phenylisoquinoline)(acetylacetonate) iridium(III) as blue and red phosphorescent emitters, respectively. The CIE 1931 color coordinate difference of the white OLEDs is (0.008, 0.007) when the luminance of the device is increased from approximately 265 cd/m² to 9156 cd/m², which is regarded as visually indistinguishable in practice. In addition, we also measured the decay time of excitons to investigate the emission mechanism in this device using transient photoluminescence and electroluminescence techniques.     

Spin polarization of the neutral exciton in a single quantum dot

While efficient nuclear polarization has earlier been reported for the charged exciton in InAs/GaAs quantum dots at zero external magnetic field, we report here on a surprisingly high degree of circular polarization, up to ≈60%$\approx 60\%$, for the neutral exciton emission in individual InAs/GaAs dots. This high degree of polarization is explained in terms of the appearance of an effective nuclear magnetic field which stabilizes the electron spin. The nuclear polarization is manifested in experiments as a detectable Overhauser shift. In turn, the nuclei located inside the dot are exposed to an effective electron magnetic field, the Knight field. This nuclear polarization is understood as being due to the dynamical nuclear polarization by an electron localized in the QD. The high degree of polarization for the neutral exciton is also suggested to be due to separate in-time capture of electrons and holes into the QD.     

Highly efficient all phosphorescent white organic light-emitting diodes for solid state lighting applications

We report highly efficient all phosphorescent white organic light-emitting diodes (OLEDs) with an exciton-confinement structure. By stacking two emissive layers (EMLs) with different charge transporting properties, effective charges as well as exciton confinements were achieved. Accordingly, efficient blue OLEDs with a peak external quantum efficiency (EQE) over 22% and power efficacy (PE) over 50 lm/W were developed by using iridium(III) bis(4,6-(difluorophenyl) pyridinato-N,C2′)picolinate (FIrpic) as an electro-phosphorescent dopant. When the optimized orange and red EMLs were sandwiched between the stacked two blue EMLs, white OLEDs with an EQE and PE of 24.3% and 45.9 lm/W at a luminance of 1000 cd/m² were obtained without the use of any out-coupling techniques. In addition, these white OLEDs exhibit a color rendering index (CRI) value of 84 with high efficacy.     

Study on electroluminescence processes in dye-doped organic light-emitting diodes

Electroluminescence (EL) mechanism of dye-doped organic light-emitting diodes (OLEDs) was investigated by using three familiar fluorescent dyes, i.e., 5,12-Dihydro-5,12-dimethylquino [2,3-b]acridine-7,14-dione (DMQA), 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB), and 5,6,11,12-tetraphenylnaphthacene (Rubrene). EL spectra of the doped devices with structure of indium tin oxide (ITO)/N,N′-bis-(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′- diamine (NPB) (40 nm)/tris-(8-hydroxyquinolate)-aluminum (Alq₃) (x nm, x=0–40 nm)/dye: Alq₃ (weight ratio≈1%, 2 nm)/Alq₃ (48−x nm)/MgAg indicated that direct carrier trapping (DCT) process dominated light emission of devices. As a result, investigation of carrier-recombination site via doping, which is conventionally applied in OLEDs, is questionable since the doping site and the dopant itself may significantly influence the carrier-recombination process in the doped devices.     

Polarization anisotropy of exciton in self-assembled elliptical InP/InGaP quantum dots

Optical anisotropy of self-assembled elliptical InP quantum dots has been investigated in terms of the polarization dependence of excitons. Although large size inhomogeneity is present, two kinds of characteristic quantum dots, which are classified into large and small quantum dots, were found in terms of the polarization anisotropy. We have confirmed that the large quantum dots are more pronounced in the polarization anisotropy, where the degree of linear polarization for the large quantum dots is significantly larger (∼60%) than that for the small ones (∼36%). The effective shape of quantum dots is also estimated by using the size dependence of oscillator strength, which is in agreement with the AFM image. We also suggest that the anisotropy of exciton oscillator strength can be modified via the dipole–dipole interaction between nearest exciton dipoles.     

两种铽配合物与PVK混合体系的发光机理研究

研究了稀土配合物Tb(p-MBA)₃phen(样品Ⅰ)和Tb(p-ClBA)₃phen(样品Ⅱ)与导电聚合物材料PVK掺杂体系的光致发光和电致发光特性。发现在样品Ⅰ与PVK混合薄膜的光致发光中,除了三价铽离子的发光外,还能看到明显的PVK的发光;而在电致发光中,PVK的发光完全被抑制,只能看到Tb3+的绿光发射。对样品Ⅱ与PVK的混合发光层,无论其光致发光谱还是电致发光谱,都没有看到410 nm处PVK的发射。进一步测量两种材料的激发光谱,初步探讨了器件的发光机理。样品Ⅰ的发光可能来源于两个方面,一是PVK到稀土配合物的不完全的能量传递,二是由于载流子俘获机理;样品Ⅱ的发光则是由于PVK到稀土配合物的完全的能量传递。     

The effect of electric field strength on electroplex emission at the interface of NPB/PBD organic light-emitting diodes

Organic light-emitting diode (OLED) based on two kinds of blue emission materials N,N′-bis(1-naphthyl)-N,N′-diphenyl-l,l′-diphenyl-4,4′-diamine (NPB) and 2-(4-biphenylyl)-5(4-tert-butyl-phenyl)-1,3,4-oxadiazole (PBD) was fabricated. There is only one emission peak in photoluminescence (PL) spectrum which originates from NPB exciton emission. And the electroluminescence (EL) emission peaks have an apparent red-shift with the increase of driving voltage. The red-shift emission from exciplex emission could be ruled out. Thus, by the method of Gaussian fitting it should be ascribed to the overlap of exciton emission and electroplex emission which occurs at the interface between NPB and PBD. The formation of the electroplex emission under high electric field is analyzed.     

Development of electroluminescence cell using a Eu0.5Y0.5(TTA)3Phen organic luminescent complex

Novel red emitting organic luminescent complexes, namely Eu_0.5Ln_0.5(TTA)₃ Phen (Eu: europium, Ln: Y/Tb, Y: yttrium, Tb: terbium, TTA: thenoyl tri fluoro acetone, Phen: phenanthroline) were synthesized by solution technique, maintaining stoichiometric ratio. These complexes were characterized by various techniques such as XRD, optical absorption and photoluminescence (PL) spectra. Electroluminescence cells were designed by sandwiching Eu_0.5Ln_0.5(TTA)₃Phen between indium tin oxide (ITO) and aluminum (Al). Voltage?current characteristics and voltage?brightness characteristics of the developed electroluminescent cell were carried out. Turn on voltage of both the devices was found to be 9 V. These devices emit intense red emission at 611 nm, proving their potential applications as organic light emitting diodes and displays.     

The enhanced performance of organic light-emitting diodes by using PCBM as the anode modification layer

[6,6]-Phenyl C₆₁ butyric acid methyl ester (PCBM) is used to modify an indium tin oxide (ITO)-coated substrate. Organic light-emitting diodes (OLEDs) using PCBM as the anode modification layer are fabricated. The dependence of performance on different PCBM thicknesses is also investigated. When the thickness of the PCBM film is appropriate, the brightness and efficiency of OLEDs are enhanced, which is attributed to an enhanced hole injection and an improved carrier balance. The enhancement of hole injection was ascribed to the formation of a dipole layer at the anode/organic interface.     

Luminescence properties of type-II quantum well light-emitting diodes formed with NPB and Alq3

The organic quantum well devices which are similar to the type-II quantum well of inorganic semiconductor have been fabricated. In the electroluminescence, the blue shift of spectrum with increasing applied voltage is observed, which is interpreted by exciton confinement effect and polarization effect, and the generation of exciton, including carrier injection and energy transfer, is discussed. This energy transfer from barrier to well is studied by photoluminescence and is interpreted in terms of Förster energy transfer. The electromodulation of photoluminescence demonstrates the quenching mainly comes from the dissociation of exciton in NPB and that in Alq₃ is very stable.     

纳米折叠InGaN/GaN LED材料生长及器件特性

在以自组织Ni纳米岛为掩膜制作的n-GaN纳米柱上,利用MOCVD方法外延生长了具有折叠InGaN/GaN多量子阱(MQW)的LED结构外延片,进而制作了LED器件.外延片上中下游的光致荧光测试,结果表明外延片具有很好的均匀性.用该外延片制作的LED的电致发光谱,随注入电流增加没有明显蓝移,这表明纳米结构能更好地释放应力,纳米柱上外延生长的多量子阱,具有较低的压电极化电场.正向工作电流20 mA时,LED器件的工作电压为4.6 V. 关键词： 纳米柱LED 光致发光 电致发光     

有机多层量子阱结构的光致发光特性的研究

采用多源高真空有机分子束沉积系统(OMBDs),将两种有机小分子材料PBD和Alq₃以交替生长的方式,制备了不同厚度的PBD/Alq₃有机多层量子阱结构(OMQWs), 并利用电化学循环伏安法和光吸收分别测定了PBD和Alq₃的最低空分子轨道(LUMO)和最高占据分子轨道(HOMO)。该结构类似于无机半导体中的Ⅰ型量子阱结构,PBD层作为势垒层,Alq3层作为势阱层和发光层,并进行了小角X射线衍射(XRD)的测量。利用荧光光谱研究了OMQWs光致发光(PL)特性,得到随着阱层厚度的降低,光致发光的峰位将蓝移;同时随垒层厚度的减小,PBD的发光峰逐渐消失。利用量子阱结构可以使PBD的能量有效的传递给Alq₃,从而增强Alq₃的发光。     

Investigation of optical properties of modulation doped GaN/AlGaN MQWS nanostructures

Due to many important applications, the group III-nitride semiconductors have recently attracted remarkable attention among the semiconductor researchers and engineers. In this paper, we report on the impact of the extrinsic and temporal carriers on the screening of the polarization internal fields. The optical efficiency of GaN/AlGaN multiple quantum well (MQW) nanostructures were studied by means of photoluminescence (PL) and time-resolved PL measurements. Extrinsic carriers come from Si doping in the barriers while temporal carriers originate when the samples are excited by the laser beam. The emission peaks of MQWs in PL spectra of the undoped and low-doped samples show a shift towards higher energy levels as excitation intensity increases, while the other samples do not exhibit such a phenomenon due to the dominance of the extrinsic carriers. The transient data confirm the results of the PL measurements.     

Synthesis and optical characterization of vertically grown ZnO nanowires in high crystallinity through vapor-liquid-solid growth mechanism

The gas-phase growth and optical characteristics of 1-dimensional ZnO nanostructure have been investigated. The ZnO nanowires (NWs) were grown vertically on Au coated silicon substrates by vapor-liquid-solid (VLS) growth mechanism using chemical vapor deposition (CVD). The ZnO NWs were grown in the crystal direction of [0 0 0 1]. The ZnO NWs exhibit the uniform size of less than 100 nm in diameter and up to 5 μm in length. Photoluminescence (PL) spectrum of ZnO NWs shows the strong band-edge emission at ∼380 nm (∼3.27 eV) without significant deep-level defect emission. The exciton lifetime of ZnO NWs was measured to be approximately 150 ± 10 ps.     

Non-doped red to yellow organic light-emitting diodes with an ultrathin 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) layer

In this letter, bright non-doped red to yellow organic light-emitting diodes (OLEDs) with ultrathin 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) layer as the emitting layer were fabricated. It was investigated that the effect of the ultrathin DCJTB layer on the electroluminescent (EL) performance of OLEDs. The DCJTB layer was incorporated at different positions in the conventional tris(8-quinolinolato)-aluminum (AlQ)-based devices (ITO/NPB/AlQ/LiF/Al). The emission of DCJTB was dominative in the EL spectra of the devices, in which the position of 0.3 nm DCJTB layer was less than 10 nm from the NPB/AlQ interface. The EL peak emission of DCJTB shifted to blue side as DCJTB position moved gradually from AlQ to NPB layer. The highest brightness of the device with 0.3 nm DCJTB layer inserted into NPB reached 16,200 cd/m² at 15 V, with the CIE coordinates of (0.522, 0.439).     

Effects of hole injection layer thickness on the luminescent properties of white organic light-emitting diodes

This work investigates how the thickness of the hole injection layer (HIL) influences the luminescent characteristics of white organic light-emitting diodes (WOLED). Experimental results indicate that inserting a thin HIL (<200 Å) into a WOLED without an HIL reduces the brightness and clearly changes the chromaticity because the surface of the 4,4′,4″-tris{N,-(3-methylphenyl)-N-phenylamino}-triphenylamine) (m-MTDATA) film is extremely rough. In contrast, a dense film structure and the fine surface morphology of m-MTDATA of moderate thickness (350-650 Å) provides a uniform conducting path on which holes cross the indium tin oxide (ITO)/HIL interface, improving luminescent performance, associated with the relatively stable purity of the color of the emission, with Commission Internationale 1′Eclairage (CIE) coordinates of (x = 0.40, y = 0.40). However, inserting a thick HIL (>650 Å) reduces the luminescent performance and causes red-shift, because the holes and electrons in the effective emissive confinement region become less optimally balanced. Moreover, optimizing the device structure enables a bright WOLED with CIE coordinates of (x = 0.34, y = 0.33) to reach a luminance of 7685 cd/m² at a current density of 100 mA/cm², with a maximum luminous efficiency of 1.72 lm/W at 5.5 V.