Diode-pumped Nd<Superscript>3+</Superscript>:YAl<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript> laser at 1338 nm

A high-power diode -pumped Nd³⁺:YAl₃(BO₃)₄ (Nd:YAB) laser emitting at 1338 nm is described. At the incident pump power of 9.8 W, as high as 734 mW of continuous-wave (CW) output power at 1338 nm is achieved. The slope efficiency with respect to the incident pump power was 9.0%. To the best of our knowledge, this is the first demonstration of such a laser system. The output power stability over 60 min is better than 2.6%. The laser beam quality M ² factor is 1.21.     

Diode-pumped Q-switched Nd:Y<Subscript>0.5</Subscript>Lu<Subscript>0.5</Subscript>VO<Subscript>4</Subscript> laser double-modulated with an acousto-optic modulator and Cr<Superscript>4+</Superscript>:YAG saturable absorber

A diode pumped Nd:Y_0.5Lu_0.5VO₄ pulse laser modulated with an acousto-optic (AO) Q-switcher and Cr⁴⁺:YAG saturable absorber is first demonstrated in this paper. The laser is shown to generate shorter pulse width than AO Q-switched laser alone, and have a higher peak power and single pulse energy than passively Q-switched laser with only Cr⁴⁺:YAG. A laser pulse width of 6.16 ns and a peak power of about 43.83 kW are achieved at the incident pumping power of 14.09 W.     

Passively Q-switched GdVO<Subscript>4</Subscript>/Nd:GdVO<Subscript>4</Subscript> laser with Cr<Superscript>4+</Superscript>:YAG saturable absorber under direct 879 nm diode pumping to the emitting level

A passively Q-switched 1.06 μm laser with Cr⁴⁺:YAG saturable absorber by direct 879 nm diode pumping grown-together composite GdVO₄/Nd:GdVO₄ crystal to the emitting level was demonstrated in this paper. The characteristics of pulsed laser were investigated by using two kinds of Cr⁴⁺:YAG crystal with the initial transmissivity of 80 and 90%, respectively. When the T ₀ = 90% Cr⁴⁺:YAG was used, an average output power of 1.59 W was achieved at an incident pump power of 10 W. The pulse width and repetition rate were 64.5 ns and 170 kHz, respectively. The thermal lens effect of laser crystal was analyzed.     

Diode-pumped CW Nd:YAG laser at 1356 nm based on the <Superscript>4</Superscript><Emphasis Type="Italic">F</Emphasis><Subscript>3/2</Subscript>-<Superscript>4</Superscript><Emphasis Type="Italic">I</Emphasis><Subscript>13/2</Subscript> transition

We describe the output performances of the 1356 nm ⁴ F _3/2-⁴ I _13/2 transition (generally used for a 1319 nm transition) in Nd:YAG under in-band pumping with diode laser at the 809 nm wavelength. An end-pumped Nd:YAG crystal yielded 1.02 W of continuous-wave (CW) output power for 18.2 W of incident pump power. Moreover, intracavity second-harmonic generation (SHG) has also been achieved with a power of 290 mW at 678 nm by using a LiB₃O₅ (LBO) nonlinear crystal. The red beam quality factor M ₂ was less than 1.37. The red power stability was less 3.2% in 4 h.     

Diode-pumped CW Nd:YAG laser at 1116 nm based on the <Superscript>4</Superscript><Emphasis Type="Italic">F</Emphasis><Subscript>3/2</Subscript>-<Superscript>4</Superscript><Emphasis Type="Italic">I</Emphasis><Subscript>11/2</Subscript> transition

We describe the output performances of the 1116 nm ⁴ F _3/2-⁴ I _11/2 transition (generally used for a 1064 nm transition) in Nd:YAG under in-band pumping with diode laser at the 809 nm wavelength. An end-pumped Nd:YAG crystal yielded 680 mW of continuous-wave (CW) output power for 18.2 W of incident pump power. Moreover, intracavity second-harmonic generation (SHG) has also been achieved with a power of 97 mW at 558 nm by using a LiB₃O₅ (LBO) nonlinear crystal. The yellow-green beam quality factor M ² was less than 1.21. The yellow-green power stability was less 2.5% in 4 h.     

Quasi-three level laser based on diode-pumped Nd<Superscript>3+</Superscript>:YAlO<Subscript>3</Subscript> crystal

We describe the output performances of the 930 nm ⁴ F _3/2 → ⁴ I _9/2 transition in Nd³⁺:YAlO₃ (Nd:YAP) under in-band pumping with diode laser at the 803 nm wavelength. An end-pumped Nd:YAP crystal yielded 1.13 W of continuous-wave (CW) output power for 17.8 W of incident pump power. Moreover, intracavity second-harmonic generation has also been achieved with a power of 172 mW at 465 nm by using a LiB₃O₅ (LBO) nonlinear crystal. The blue beam quality factor M ² was less than 1.3. The blue power stability was less 3% in 60 min.     

Efficient Nd:Y<Subscript>0.36</Subscript>Gd<Subscript>0.64</Subscript>VO<Subscript>4</Subscript>-GdCa<Subscript>4</Subscript>O(BO<Subscript>3</Subscript>)<Subscript>3</Subscript> red laser under diode pumping into the emitting level

We report a red laser at 671 nm generation by intracavity frequency doubling of a continuous wave (cw) laser operation of a 1342 nm Nd:Y_0.36Gd_0.64VO₄ laser under diode pumping into the emitting level ⁴ F _3/2. An GdCa₄O(BO₃)₃ (GdCOB) crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an incident pump power of 17.8 W, as high as 1.12 W of cw output power at 671 nm is achieved. The optical-to-optical conversion efficiency is up to 6.3%, and the fluctuation of the red output power was better than 3.5% in the given 30 min.     

Timing-jitter reduced high-repetition-rate Q-switched Nd:YVO<Subscript>4</Subscript>/Cr<Superscript>4+</Superscript>:YAG micro laser with low pump power

We report a high repetition rate Q-switched Nd:YVO₄/Cr⁴⁺:YAG micro laser with small pump power. Unwanted defects in pulse train, which are inherently large in passively Q-switched laser, was simply minimized by controlling temperature of Nd:YVO₄/Cr⁴⁺:YAG medium. When T ₀ = 90% Cr⁴⁺:YAG and R _OC = 90% output coupler were used, Q-switched Nd:YVO₄/Cr⁴⁺:YAG micro laser showed the optimum output; maximum output power of 58 mW, optical-to-optical efficiency of 9.1%, repetition rate of 1.1 MHz, and pulse width of 57 ns were achieved with 640 mW pumping. MHz-order repetition rate in Nd:YVO₄/Cr⁴⁺:YAG Q-switched laser with low pumping (<1 W) is the highest value to the best of our knowledge.     

Diode-pumped CW Nd<Superscript>3+</Superscript>:YAlO<Subscript>3</Subscript> laser at 1339 nm

A diode-pumped Nd³⁺:YAlO₃ (Nd:YAP) laser emitting at 1339 nm is described. At the incident pump power of 17.8 W, as high as 3.4 W of continuous-wave (CW) output power at 1339 nm is achieved. The slope efficiency with respect to the incident pump power was 23.6%. The output power stability over 60 min is better than 3.5%. The laser beam quality M ² factor is 1.33.     

Diode-pumped Yb:Y<Subscript>2</Subscript>SiO<Subscript>5</Subscript>-LiB<Subscript>3</Subscript>O<Subscript>5</Subscript> cyan laser at 501.7 nm

We describe the output performances of the 928 nm ⁴ F _3/2 → ⁴ I _9/2 transition in Nd:CLNGG under diode-laser pumping. An end-pumped Nd:CLNGG crystal yielded 1.3 W of continuous-wave output power for 17.8 W of absorbed pump power. The slope efficiency with respect to the absorbed pump power was 11.2%. Furthermore, with 17.8 W of diode pump power and the frequency-doubling crystal LiB₃O₅ (LBO), a maximum output power of 260 mW in the blue spectral range at 464 nm has been achieved. The blue output power stability over 4 h is better than 3.2%.     

Diode pumped Nd:Lu<Subscript>0.5</Subscript>Y<Subscript>0.5</Subscript>VO<Subscript>4</Subscript>-LBO red laser at 671 nm

We report a efficient compact red laser at 671 nm generation by intracavity frequency doubling of a continuous wave laser operation of a diode pumped Nd:Lu_0.5Y_0.5VO₄ laser on the ⁴ F _3/2-⁴ I _13/2 transition at 1342 nm. An LBO crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an absorbed pump power of 17.8 W, as high as 2.25 W of continuous wave output power at 671 nm is achieved with 10-mm-long LBO. The optical-to-optical conversion efficiency is up to 12.6%, and the fluctuation of the red output power was better than 3.6% in the given 30 min.     

Passive Q-switching of a laser-diode-pumped intracavity-frequency-doubling Nd:Nd<Superscript>3+</Superscript>:NaY(WO<Subscript>4</Subscript>)<Subscript>2</Subscript>/KTP laser with Cr<Superscript>4+</Superscript>:YAG saturable absorber

Nd³⁺:NaY(WO₄)₂, known as Nd:NYW, is a new type crystal. By using laser-diode as pump source, a passive Q-switching of intracavity-frequency-doubling Nd:NYW/KTP laser has been realized with Cr⁴⁺:YAG saturable absorber. The dependence of pulse repetition rate, pulse energy, pulse width, and peak power on incident pump power for different small-signal transmissions of Cr⁴⁺:YAG are measured. The coupled rate equations are used to simulate the Q-switched process of laser, and the numerical solutions agree with the experimental results.     

All-solid-state Nd:Gd<Subscript>0.18</Subscript>Y<Subscript>0.82</Subscript>VO<Subscript>4</Subscript>-LBO green laser at 532 nm

We report a continuous-wave (CW) coherent green radiation at 532 nm by intracavity frequency doubling generation of 1064 nm Nd:Gd_0.18Y_0.82VO₄ laser. With incident pump power of 18.2 W, output power of 1.08 W at 532 nm has been obtained using a 5 mm-long KTP crystal. The optical conversion efficiency was up to 5.9%. At the output power level of 1.08 W, the output stability is better than 5%. The beam quality M² values were equal to 1.26 and 1.12 in X and Y directions, respectively.     

Pulse compression in diode-pumped doubly Q-switched Nd:GdVO<Subscript>4</Subscript> laser with both V<Superscript>3+</Superscript>:YAG and Co<Superscript>2+</Superscript>:LMA saturable absorber

By simultaneously using both a V³⁺:YAG and a Co²⁺:LaMgAl₁₁O₁₉ saturable absorber in the cavity, for the first time to our knowledge, a diode-pumped doubly Q-switched Nd:GdVO₄ laser has been realized. The dependence of pulse width, pulse repetition rate, pulse energy and peak power on the incident pump power are measured. Under the absorbed pump power of 8.59 W, both the pulse temporal profile of the passive double-switching with the pulse width of 25.29 ns, and the passive single-switching just using V³⁺:YAG with pulse width of 30.46 ns are obtained. The pulse duration is partly compressed in contrast to the purely passively Q-switched laser with V³⁺:YAG.     

Quasi-three-level laser operation of Nd:Y<Subscript>0.53</Subscript>Gd<Subscript>0.47</Subscript>VO<Subscript>4</Subscript> mixed vanadate crystal oscillating at 913 nm

Efficient continuous-wave (CW) laser operation on the ⁴ F _3/2 → ⁴ I _9/2 transition of Nd:Y_0.53Gd_0.47VO₄, a mixed vanadate crystal, is demonstrated at room temperature employing a compact plano-concave resonator, generating a polarized output power of 0.39 W at 913.2 nm with 2.85 W of pump power absorbed, the optical-to-optical and slope efficiencies being 14 and 25%, respectively.     

Ultrahigh-efficiency TEM<Subscript>00</Subscript> diode-side-pumped Nd:YVO<Subscript>4</Subscript> laser

Ultrahigh-efficiency TEM₀₀ operation is demonstrated in a diode-pumped Nd:YVO₄ laser in a bounce amplifier geometry using a specially designed astigmatically optimised cavity configuration. Optical efficiency >68% is demonstrated and up to 27.1 W of output power for multimode operation. For single-mode TEM₀₀ operation, an output power of 23.1 W for 39.5 W of diode pumping was produced with beam propagation parameters of M_x ²=1.3 and M_y ²=1.1. Received: 10 October 2002 / Revised version: 9 December 2002 / Published online: 19 March 2003 RID="*" ID="*"Corresponding author. Fax: +44-20/7594-7744, E-mail: a.minassian@ic.ac.uk     

Efficiency intracavity frequency-doubled Nd:Y<Subscript>0.36</Subscript>Gd<Subscript>0.64</Subscript>VO<Subscript>4</Subscript>-LBO green laser at 532 nm with direct pumping

We report an efficient laser emission on the 1064 nm ⁴ F _3/2 to ⁴ I _11/2 transition in mixed vanadate crystal Nd:Y_0.36Gd_0.64VO₄ under the pump with diode laser at 880 nm. Continuous wave (CW) 10.7 W output power at 1064 nm is obtained under 17.8 W of incident pump power; the slope efficiency with respect to the incident pump power was 71.2%. Moreover, intracavity frequency doubling with LiB₃O₅ (LBO) nonlinear crystal yielded 4.6 W of green light at 532 nm. An optical-to-optical efficiency with respect to the incident pump power was 25.8%.     

37 W 888-nm-pumped grown-together composite crystal YVO<Subscript>4</Subscript>/Nd:YVO<Subscript>4</Subscript>/YVO<Subscript>4</Subscript> oscillator at 1342 nm

We report on a continuous-wave Nd:YVO₄ oscillator at 1342 nm based on the combination of a grown-together composite crystal YVO₄/Nd:YVO₄/YVO₄ and the 888 nm diode-laser direct pumping for the first time. At the absorbed pump power of 102 W, a maximum average output power of 37.2 W at 1342 nm was obtained, corresponding to an optical-optical conversion efficiency of 36.5% and a high slope efficiency of 63.0%, respectively. To the best of our knowledge, this is the highest output power ever obtained for a 1342 nm Nd:YVO₄ oscillator.     

A laser-diode end-pumped passively Q-switched intracavity doubling Nd:GdVO<Subscript>4</Subscript>/KTP red laser with V<Superscript>3+</Superscript>:YAG saturable absorber

Using a V³⁺:YAG saturable absorber, we realize the running of a laser-diode end-pumped passively Q-switched intracavity-frequency-doubling Nd:GdVO₄/KTP red laser. Under the absorbed pump power of 9.45 W and with V³⁺:YAG initial transmission T ₀ = 94%, the obtained average output power and pulse width were 610 mW and 15.09 ns with the repetition rate of 12.2 kHz, corresponding to the single pulse energy 50 μJ and the pulse peak power 3.34 kW.     

Diode-pumped continuous-wave Nd<Superscript>3+</Superscript>:YAlO<Subscript>3</Subscript> intracavity-doubled red laser

It is reported that efficient continuous-wave (CW) red laser generation at 670 nm in a LBO crystal at type-I phase matching direction performed with a diode-pumped Nd³⁺:YAlO₃ (Nd:YAP) laser. With incident pump power of 15.6 W, output power of 273 mW at 670 nm has been obtained using a 10 mm-long LBO crystal. At the output power level of 273 mW, the output stability is better than 3.7%.