溴碘化银T-颗粒乳剂晶体的表面形貌研究

用原子力显微镜研究了T-颗粒卤化银晶体、掺杂有浅电子陷阱掺杂剂K₄[Ru(CN)₆]的掺杂乳剂晶体、经硫加金化学增感后的掺杂乳剂晶体的表面形貌以及曝光后表面形貌的变化.观察结果表明,T-颗粒晶体表面存在很多突起,经曝光后这些突起高度增加,更集中.掺入浅电子陷阱掺杂剂K₄[Ru(CN)₆]后,T-颗粒晶体对光更敏感,曝光后表面突起高度的增加幅度大于未掺杂乳剂光照后表面高度的变化.同时硫增感剂对表面突起的分布也有很大的影响.     

[Fe(CN)6]4-在溴碘化银T-颗粒乳剂中的掺杂

本文研究了K₄[Fe(CN)₆]掺杂对溴碘化银T-颗粒乳剂感光性能的影响.结果表明,掺杂剂的掺杂量以及掺杂位置对乳剂的感光性能都有影响.K₄[Fe(CN)₆]的掺杂量在每克乳剂31×10^-9-31×10^-11mol之间时,乳剂感光度都有提高.最佳掺杂量为每克乳剂31×10-10mol.掺杂位置接近表面时效果相对较好,表明K₄[Fe(CN)₆]是浅电子陷阱掺杂剂.当掺杂剂的掺杂量大于每克乳剂31×10^-8mol,且掺杂位置在乳剂颗粒较深内部时,乳剂的感光度反而下降.     

La0.8Sr0.2Ga0.8Mg0.2O3与La0.8Sr0.2Ga0.8Mg0.15Co0.05O3电导的对比

采用固相合成法制备了La0.8Sr0.2Ga0.8Mg0.2O3(LSGM8282)和La0.8Sr0.2Ga0.8Mg0.15Co0.05O3 (LSGMC5), 利用四电极交流阻抗法和Hebb-Wagner 极化法对比研究了两种材料的总电导率和电子电导率. 实验结果表明, LSGM8282 的总电导率与氧分压无明显依赖关系, 而LSGMC5 的总电导率在高氧分压区随氧分压降低而增加,在中等氧分压区域基本保持不变. 在973-1173 K的温度范围内, LSGM8282的自由电子电导率以及电子空穴电导率的氧分压级数分别为-1/4和1/4.在1073-1173 K的温度范围内, LSGMC5的自由电子电导率以及电子空穴电导率的氧分压级数分别为-1/4和约为1/8, 表明LSGMC5的空穴产生机制可能与LSGM8282不同. LSGM8282 的氧离子电导率与氧分压无关, 而LSGMC5 的氧离子电导率在高氧分压区随氧分压的减小而增加.     

K4[Ru(CN)6]对T-颗粒溴碘化银乳剂感光性能及光电子寿命影响的研究

本文研究了K₄[Ru(CN)₆]掺杂剂对T-颗粒溴碘化银乳剂感光性能以及光电子寿命的影响,研究结果表明,掺杂剂的掺杂量、掺杂位置以及在乳剂颗粒内部的分布区域对乳剂的感光性能都有影响.掺杂位置接近表面或接近颗粒几何核心时效果明显,掺杂位置接近富碘区域时,乳剂的感光度变化不明显或是下降.掺杂位置决定了掺杂剂的最佳用量,在66%—92%位置掺杂时,感光度提高最为显著.与未掺杂乳剂相比,最佳掺杂位置和最佳掺杂量乳剂的自由光电子与浅束缚光电子的寿命都有所延长.     

卤化银乳剂制备中的新型掺杂剂

本文综述了近年来乳剂制备中常用的新型掺杂剂,较详细地介绍了两种能提高光电子利用效率的掺杂剂,即过渡金属络合物浅电子陷阱掺杂剂和羧酸盐(酯)有机空穴陷阱掺杂剂,总结了掺杂剂的选择原则,并举例说明了掺杂剂对乳剂感光度的影响.     

改善高氯卤化银乳剂的高照度性能

本实验制备了高氯卤化银立方体系列乳剂和高氯卤化银(100)晶面T颗粒乳剂,对高氯卤化银立方体乳剂进行了不同种类掺杂剂的掺杂试验.通过测定以上各乳剂在常规曝光和高照度曝光下的照相性能,表明了在高氯卤化银乳剂中掺杂碘化物、掺杂铱络合物和掺杂浅电子陷阱掺杂剂都可以不同程度地改善乳剂的高照度性能,几种改进措施的结合效果更好.     

N掺杂空心TiO2微球的合成与表征

采用无皂乳液聚合合成的聚苯乙烯(PS)微球为模板、氨水/三乙醇胺为催化体系, 通过溶胶-凝胶方法合成了PS/TiO₂(核/壳)复合微球, 然后通过煅烧制备了N掺杂、锐钛型空心TiO₂微球. 在反应体系中三乙醇胺扮演双重角色, 既是TiO₂生成及包覆过程的抑制剂又是空心TiO₂微球的N掺杂剂. 改变氨水、三乙醇胺和钛酸正丁酯用量可控制TiO₂壳的形态和尺寸. 氨水用量增加, PS/TiO₂复合微球的壳表面变得粗糙|三乙醇胺用量增加, 壳表面变得光滑|钛酸正丁酯用量提高导致壳层变厚. 改变三乙醇胺用量可调节空心TiO₂微球中的N掺杂量|N掺杂空心TiO₂微球具有可见光响应和光催化作用.     

MgO和Fe2O3的添加对GDCSi体系微观结构及电化学性能的影响

采用溶胶凝胶法制备Gd_0.2Ce_0.8O_3-δ +0.05%（质量分数）SiO₂（GDCSi）电解质。在GDCSi体系中加入Fe₂O₃及MgO可达到降低烧结温度的同时提高晶界电导率，并减小杂质SiO₂对氧离子在晶界处传输的阻碍的目的。将MgO和Fe₂O₃单掺杂或双掺杂在GDCSi体系中并对GDCSi基电解质的微观形貌及电性能进行研究。结果表明，所有样品主要由立方萤石结构相组成；物质的量分数4%MgO单掺杂的GDCSi-M、物质的量分数4%Fe₂O₃单掺杂的GDCSi-F以及物质的量分数2%MgO-物质的量分数2%Fe₂O₃共掺杂的GDCSi-MF均可促进GDCSi体系晶粒增长，降低晶粒间孔隙率，提高电解质的相对密度，降低晶粒电阻R_gi、晶界电阻R_gb及总电阻R_t；GDCSi-MF具有最高晶界电导率和总电导率，在400 ℃时GDCSi-MF的晶界电导率σ_gb和总电导率σ_t分别是GDCSi的10.41和1.82倍。     

溴和碘掺杂高取向反式聚乙炔导电性能各向异性研究

根据固体能带理论,用EHMO/CO方法,计算了高取向反式聚乙炔及溴和碘掺杂态的二维能带结构,讨论了其导电性能的各向异性.研究表明,平行和垂直于分子链方向的电导率之比(σ_///σ_⊥上)取决于这两个方向上能隙和带宽的大小掺杂后σ_///σ_⊥下降是由于掺杂剂使链间栖合作用增强所致.理论计算与实验结果一致.     

新型复合聚合物电解质离子导电行为的研究

PEG600和CH₂Cl₂通过Williamson缩聚反应,生成主链柔顺的PEG共聚物.¹H NMR测试表明其以[CH₂O(CH_2>CH₂O)¹³]为重复结构单元.与聚合物质量含量8%的气相SiO₂及适量的LiN(CF₃SO₂)2掺杂,制备一系列新型复合聚合物电解质.通过AC阻抗研究离子电导率,提出适合本体系的等效电路.该体系具有良好的成膜性能与热稳定性能,电导率比传统的PEO/盐体系高2～3个数量级.离子电导率随着温度的升高而增加,低温电导率增加较快,高温电导率增加较慢,呈非Arrhenius变化.在EO/Li=13～34:1(摩尔比)范围内,离子电导率随着盐浓度的变化出现两个峰值,低盐浓度的峰值较高.在303 K, EO/Li=28:1时,最大离子电导率接近10^-4 S/cm.     

Effect of synthesis temperature and doping level on conductivity and structure of poly(3-methyl thiophene)

Poly(3-methyl thiophene) was synthesized by oxidative chemical polymerization technique using ferric chloride as the dopant in an inert atmosphere. Samples of different doping levels were prepared and analyzed by Fourier transform infrared (FTIR) spectroscopy, scanning electron microscopy, and direct current (DC) conductivity measurement at room temperature (300 K). Synthesis of the polymer was confirmed by FTIR studies. FTIR spectra showed a shift in the heterocyclic bands in the region of 700-1200 cm(-1) with a decrease in synthesis temperature. It was evident from the scanning electron micrographs that the surface structure of the polymer became denser with an increase in doping level. The measured DC conductivity increased initially up to the doping level of 0.8 M and then this increase tended to slow down. Samples having a doping level of 0.4 M were synthesized at 300, 280, and 270 K while maintaining the other synthesis parameters. The conductivity and yield were found to increase as the temperature of the polymerization decreased.     

Synthesis and characterization of polyaniline-polyvinyl chloride blends doped with sulfamic acid in aqueous tetrahydrofuran

The temperature dependence of direct current (dc) conductivity was studied for various samples of polyaniline-polyvinylchloride (PANI-PVC) blended films. Polyaniline was doped with different concentrations of sulfamic acid in aqueous tetrahydrofuran (THF) and the blended films were prepared by varying the amount of doped PANI relative to a fixed amount of PVC. The dc conductivity of PANI-PVC blended films was measured to determine the effect of sulfamic acid (dopant) in the temperature range (300–400K). The mechanism of conduction is explained by a two-phase model. In order to evaluate the effect of the dopant, conductivity-derived parameters such as the pre-exponential factor (σ _o) and the activation energy (ΔE) were calculated. The structural changes of polyaniline-PVC blended films were characterized by FTIR spectroscopy that explores information about the suitability of the dopant in the chemical doping process.     

Research on synthesis and conductivity of ferrocenyl Schiff base and its salt

Ferrocenyl Schiff base was synthesized through the condensation of ferrocenecarboxaldehyde and p‐phenylenediamine under neutral conditions, and then a new interesting category of organometallic charge transfer complex was obtained by the doping of ferrocenyl Schiff base with Fe³⁺, Al³⁺ and Ti³⁺ salts. The effects of the dosage of doping agent and doping temperature on the room‐temperature electric conductivity of samples were discussed; in addition, the temperature dependence of the electric conductivity of samples was studied, their structures and compositions were characterized by ¹H‐NMR spectra, infrared spectra, ultraviolet spectra and an electron probe X‐ray microanalyser. The results showed that the electric conductivity of sample can increase 4–5 orders of magnitude after doping with a metallic salt, and the electric conductivity has a positive temperature coefficient effect. The electrical activation energies of the complexes in the range 0.09–1.54 eV were calculated from Arrhenius plots, indicating their favourable semiconducting behaviour. Copyright © 2006 John Wiley & Sons, Ltd.     

Concurrent Phosphorus Doping and Reduction of Graphene Oxide

Doped graphene materials are of huge importance because doping with electron‐donating or electron‐withdrawing groups can significantly change the electronic structure and impact the electronic and electrochemical properties of these materials. It is highly important to be able to produce these materials in large quantities for practical applications. The only method capable of large‐scale production is the oxidative treatment of graphite to graphene oxide, followed by its consequent reduction. We describe a scalable method for a one‐step doping of graphene with phosphorus, with a simultaneous reduction of graphene oxide. Such a method is able to introduce significant amount of dopant (3.65 at. %). Phosphorus‐doped graphene is characterized in detail and shows important electronic and electrochemical properties. The electrical conductivity of phosphorus‐doped graphene is much higher than that of undoped graphene, owing to a large concentration of free carriers. Such a graphene material is expected to find useful applications in electronic, energy storage, and sensing devices.     

Electrical conductivity change of polyaniline–dodecyl benzene sulfonic acid complex with temperature

Polyaniline–dodecylbenzene sulfonic acid (PAn–DBSA) complex was thermally treated and its conductivity and structure change were investigated. The conductivity increased linearly from 1.1 × 10⁻⁴ to 3.0 × 10⁻¹ S/cm on thermal heating until 140°C, but decayed above 200°C. The increase was caused by an additional thermal doping resulting from an increasing mobility of undoped dopants. After the thermal doping, the formation of the layered structure of PAn–DBSA is made. The decrease was caused by the thermal decomposition of dopants. The conductivity changes at a high temperature was strongly dependent on the nature of the dopant. The results were confirmed by means of X-ray patterns and Fourier transform infrared spectra obtained in the heating and cooling processes of polyaniline.     

直流极化法对溴化银T颗粒乳剂电性能的研究

采用Wagner直流极化法对溴化银T颗粒乳剂的电性能作了研究.研究结果表明,未经光照的溴化银T颗粒乳剂具有一定的电子电导率.与曝光后的溴化银T颗粒乳剂相比,未经光照的溴化银T颗粒乳剂具有更高的电子电导率.另外,在未经光照的卤化银乳剂微晶体中,如果添加防灰雾剂,其电子电导率会明显上升.感光乳剂电性能的变化反映出溴化银乳剂微晶体内自由电子与填隙银离子结合的状态.本文还从分子结构的角度探讨了四氮唑等防灰雾剂对溴化银乳剂微晶体自由电子与填隙银离子结合的阻滞作用.     

XPS法对聚乙炔化学掺杂机制的研究

用XPS(X射线光电子能谱法)研究了十余种掺杂聚乙炔的电荷转移过程, 发现对大部分掺杂剂, 由Cls谱裂分所计算的电荷转移量与掺杂剂的氧化电位直接相关. 一些强氧化性或过渡金属质子酸也符合这一规律, 同时观察到掺杂后这些氧化性质子酸本身发生价态变化. 因此这些质子酸的掺杂不是文南中所报道的质子酸机制而是氧化还原机制.所研究的若干种非氧化性或弱氧化性质子酸掺杂后电导率均较低, 这进一步表明掺杂过程中的电荷转移过程是产生高导聚乙炔的必要条件.     

Preparation and characterization of polyaniline with high electrical conductivity

In the present paper, polyaniline (PANI) was polymerized by ammonium persulphate using a chemically oxidative process under mild tempertures ranging from ?5–20°C. Electrical conductivity of as synthesized PANI got enhanced gradually owing to the increase in molecular weight and crystallinity with decrease in synthesis temperature. Extraction with tetrahydrofuran (THF) was employed as the purification method of emeraldine base (EB) to enhance the electrical conductivity of PANI effectively attributed to the removal of the low molecular weight fractions and defective molecular chains. Methanesulfonic acid (MSA) was used to dope EB due to its strong acidity and small molecular size, and the amount of dopant versus EB was also optimized. Using a novel “synergistic doping” process with m‐cresol, electrical conductivity of PANI is further enhanced owing to more regular molecular chains which resulted in better interchain charge carriers' conduction. The emeraldine salts obtained finally have high electrical conductivity reaching up to 32.5 S cm^?1, which is much higher than that of the conventionally synthesized sample reported previously. Copyright © 2008 John Wiley & Sons, Ltd.     

Electrophysical properties of layered perovskites LnBaCo<Subscript>2 − <Emphasis Type="Italic">x</Emphasis></Subscript>Cu<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>O<Subscript>5 + δ</Subscript> (Ln = Sm,Nd) for solid oxide fuel cells

The influence of doping with copper oxide on the phase composition, electric conductivity, and linear thermal expansion coefficient (LTEC) of SmBaCo₂O_{5 + δ} and NdBaCo₂O_{5 + δ} was studied. The sample homogeneity region has been determined with using XRD. The samples conductivity decreased as the dopant concentration increased. The character of the temperature dependence of conductivity changed at high copper contents. In a reductive atmosphere, the conductivity of the samples at first decreased and then remained constant. The linear thermal expansion coefficient decreased as the amount of the incorporated dopant increased.