Operational improvement of AlGaN/GaN HEMT on SiC substrate with the amended depletion region

In this paper, a high performance AlGaN/GaN High Electron Mobility Transistor (HEMT) on SiC substrates is presented to improve the electrical operation with the amended depletion region using a multiple recessed gate (MRG–HEMT). The basic idea is to change the gate depletion region and a better distribution of the electric field in the channel and improve the device breakdown voltage. The proposed gate consists of lower and upper gate to control the channel thickness. Also, the charge of the depletion region will change due to the optimized gate. In addition, a metal between the gate and drain including the horizontal and vertical parts is used to better control the thickness of the channel. The breakdown voltage, maximum output power density, cut-off frequency, maximum oscillation frequency, minimum noise figure, maximum available gain (MAG), and maximum stable gain (MSG) are some parameters for designers which are considered and are improved in this paper.     

Fabricating high performance n-channel lateral double diffused metal–oxide–semiconductor transistors utilizing the shallow trench isolation as a salicide blocking mask of the drift region

In this paper, the improved characteristics of 10 V tolerant high-voltage n-channel lateral double diffused metal–oxide–semiconductor (LDMOS) devices, using a pure 0.25 μm standard low-voltage complementary metal–oxide–semiconductor (CMOS) logic process with dual gate oxide, are described. The fabricated transistors showed about 30% better current driving characteristics and about 40% higher drain operating voltage than previous reports of these kinds of devices. The transistors maintained a breakdown voltage, BV_DSS, over 14 V. These devices also showed good sub-threshold characteristics. This paper describes the cost-effective and high performance n-channel high-voltage LDMOS using a pure low-voltage standard CMOS logic process.     

On the step-graded doped-channel (SGDC) field-effect transistor

An i-InGaP/n-In_xGa_1 − xAs/i- GaAs step-graded doped-channel field-effect transistor (SGDCFET) has been fabricated and studied. Due to the existence of a V-shaped energy band formed by the step-graded structure, a large output current density, a large gate voltage swing with high average transconductance, and a high breakdown voltage can be expected. In this study, first, a theoretical model and a transfer matrix technique are employed to analyze the energy states and wavefunctions in the step-graded quantum wells. Experimentally, for a 1  ×  80 μm²gate dimension device, a maximum drain saturation current density of 830 mAmm ^− 1, a maximum transconductance of 188mSmm ^− 1 , a high gate breakdown voltage of 34 V, and a large gate voltage swing 3.3 V with transconductance larger than 150 mSmm ^− 1are achieved. These performances show that the device studied has a good potentiality for high-speed, high-power, and large input signal circuit applications.     

Tunable single-longitudinal-mode operation of a sandwich-type YAG/Ho:YAG/YAG ceramic laser

We present a 2.09 μm single-longitudinal-mode sandwich-type YAG/Ho:YAG/YAG ceramic laser pumped by a Tm-doped fiber laser for the first time. A pair of F-P etalons was used to achieve tunable single-longitudinal-mode operation. The maximum single-longitudinal-mode output power of 530 mW at 2091.4 nm was obtained with an absorbed pump power of 8.06 W, corresponding to an optical conversion efficiency of 6.6% and a slope efficiency of 12.7%. Wavelength tunable was achieved by tuning the angle of etalons and the wavelength could be tuned from 2091.1 nm to 2092.1 nm, corresponding to a tuning frequency of 68 GHz. The M² factor was measured to be 1.23.     

Aδ-doped In0.24Ga0.76As/GaAs pseudomorphic high electron mobility transistor using a graded superlattice spacer

A new δ -doped In_0.24Ga_0.76As/GaAs pseudomorphic high electron mobility transistor (HEMT) using a graded superlattice spacer grown by molecular beam epitaxy (MBE) has been successfully fabricated and investigated. The present device structure demonstrated a more than 40% enhancement of electron mobility and 20% higher product value of electron mobility and two-dimensional electron gas (2DEG) concentration than those of the conventional HEMT with single undoped spacer under the same growth specifications. Superior device characteristics were achieved by employing the thickness-graded superlattice spacer to accommodate the lattice-mismatch-induced strain and to improve the interfacial quality. For a gate length of 1 μ m, the maximum drain-to-source saturation current density and extrinsic transconductance of the present HEMT design are 165 mA mm ^− 1and 107 mS mm ^− 1, respectively, at room temperature.     

Off-state breakdown characteristics of InGaP-based high-barrier gate heterostructure field-effect transistors

In this work, the off-state breakdown characteristics of two different types InGaP-based high-barrier gate heterostructure field-effect transistors are studied and demonstrated. These devices have different high-barrier gate structures, e.g. the i-InGaP layer for device A and n  ⁺ - GaAs/p ⁺  -InGaP/n-GaAs camel-like structure for device B. The wide-gap InGaP layer is used to improve the breakdown characteristics. Experimentally, the studied devices show high off-state breakdown characteristics even at high temperature operation regime. This indicates that the studied devices are suitable for high-power and high-temperature applications. In addition, the off-state breakdown mechanisms are different for device A and B. For device A, off-state breakdown characteristics is only gate dominated at the temperature regime from 30 to 180  ^∘ C. For device B, off-state breakdown characteristics are gate and channel dominated at 30  ^∘ C and only gate dominated within 150 to 210  ^∘ C.     

Effects of trench oxide and field plates on the breakdown voltage of SOI LDMOSFET

To improve the breakdown voltage, we propose a SOI-based LDMOSFET with a trench structure in the drift region. Due to the trench oxide and underneath boron implanted layer, the surface electric field in the drift region effectively reduced. These effects resulted in the increment of breakdown voltage for the trenched LDMOS more than 100 V compared with the conventional device. However, the specific on-resistance, which has a trade-off relationship, is slightly increased. In addition to the trench oxide on the device performance, we also investigated the influence of n− drift to n+ drain junction spacing on the off-state breakdown voltage. The measured breakdown voltages were varied more than 50 V with different n− to n+ design spaces and achieved a maximum value at L_DA = 2.0 μm. Moreover, the influence of field plate on the breakdown voltage of trench LDMOSFET was investigated. It is found that the optimum drain field plate over the field oxide is 8 μm.     

High-performance modulation-doped AlGaAs/InGaAs thermopiles for uncooled infrared FPA application

Novel thermopile based on modulation doped AlGaAs/InGaAs heterostructures is proposed and developed for the first time, for uncooled infrared FPA (Focal Plane Array) image sensor application. The high responsivity with the high speed response time are designed to be 4900 V/W with 110 μs under the 2 μm design rule. Based on integrated HEMT–MEMS technology, the 32 × 32 matrix FPA is fabricated to demonstrate its enhanced performances by black body measurement. The technology presented here demonstrates the potential of this approach for low-cost uncooled infrared FPA image sensor application.     

An AlGaN/GaN HEMT with enhanced breakdown and near-zero breakdown voltage temperature coefficient

An AlGaN/GaN high-electron mobility transistor (HEMT) with a novel source-connected air-bridge field plate (AFP) is experimentally verified. The device features a metal field plate that jumps from the source over the gate region and lands between the gate and drain. When compared to a similar size HEMT device with conventional field plate (CFP) structure, the AFP not only minimizes the parasitic gate to source capacitance, but also exhibits higher OFF-state breakdown voltage and one order of magnitude lower drain leakage current. In a device with a gate to drain distance of 6 μm and a gate length of 0.8 μm, three times higher forward blocking voltage of 375 V was obtained at V_GS=-5 V. In contrast, a similar sized HEMT with CFP can only achieve a breakdown voltage no higher than 125 V using this process, regardless of device dimensions. Moreover, a temperature coefficient of 0 V/K for the breakdown voltage is observed. However, devices without field plate (no FP) and with optimized conventional field plate (CFP) exhibit breakdown voltage temperature coefficients of -0.113 V/K and -0.065 V/K, respectively.     

V-band directional tandem coupler of monolithic uniplanar structure

We present a uniplanar coplanar-waveguide 3-dB tandem coupler operating at V-band frequencies. The uniplanar structure is monolithically fabricated by using two-section parallel-coupled lines and air-bridge crossovers replacing the conventional multilayer or bonded structures. Due to an optimized tandem structure and non-bonded crossovers minimizing the parasitic components, a maximum coupling of 2.5 dB is measured at 62 GHz with a 2 dB bandwidth of 83%, while a high directivity factor of 33 dB is simultaneously obtained at 58–62 GHz. Over the entire design frequency range of 30–90 GHz, we achieve good phase unbalance of 90 ± 6.0°, as well as return loss and isolation lower than −23 and −16 dB, respectively.     

Investigation of enhancement mode HfO2 insulated N-polarity GaN/InN/GaN/In0.9Al0.1N heterostructure MISHEMT for high-frequency applications

In this paper, we examined normally-OFF N-polar InN-channel Metal insulated semiconductor high-electron mobility transistors (MISHEMTs) device with a relaxed In_0.9Al_0.1N buffer layer. In addition, the enhancement-mode operation of the N-polar structure was investigated. The effect of scaling in N-polar MISHEMT, such as the dielectric and the channel thickness, alter the electrical behavior of the device. We have achieved a maximum drain current of 1.17 A/mm, threshold voltage (V_T) =0.728 V, transconductance (g_m) of 2.9 S mm⁻¹, high I_ON/I_OFF current ratio of 3.23×10³, lowest ON-state resistance (R_ON) of 0.41 Ω mm and an intrinsic delay time (τ) of 1.456 Fs along with high-frequency performance with f_t/ f_max of 90 GHz/109 GHz and 180 GHz/260 GHz for T_CH =0.5 nm at V_ds =0.5 V and 1.0 V. The numerically simulated results of highly confined GaN/InN/GaN/In_0.9Al_0.1N heterostructure MISHEMT exhibits outstanding potential as one of the possibility to replace presently used N-polar MISHEMTs for delivering high power density and frequency at RF/power amplifier applications.     

Electromagnetic wave absorption properties of ε-Fe3N/Y2O3 nanocomposites derived from Y2Fe17 intermetallic compound

The electromagnetic wave absorption properties of ε-Fe₃N/Y₂O₃ nanocomposites were characterized in a frequency range of 0.05–20.05 GHz. The imaginary part of relative permeability μ_r″ exhibited “twin peak” dispersion and μ_r″ value retained high over a 0.5–10 GHz range. The real part (ε_r′) and imaginary part (ε_r″) of relative permittivity almost kept a low constant in a region of 0.5–10 GHz, respectively. As a result, the resin composites with 51 vol% ε-Fe₃N/Y₂O₃ powders exhibited excellent electromagnetic wave absorption properties (RL<−20 dB) in a frequency range of 0.6–4.4 GHz, with a thickness of 3.3–19.3 mm. A minimum reflection loss of −55 dB was observed at 1.8 GHz with an absorber thickness of 7.05 mm.     

Preparation and characterization of iron/titanium-oxide composite particles

The iron/titanium-oxide composite particles have been prepared using “in-situ” hydrogen-thermal reduction method. The composites were characterized by X-ray diffraction, physical property measurement system and Mössbauer spectroscopy. The powder X-ray diffraction patterns reveal the presence of crystalline α-iron and titanium-oxide (FeTiO₃/TiO₂). The Mössbauer spectra of powders have been measured at room temperature, which indicated that the α-iron and the high-spin iron(II/III) components were observed. The complex permittivity and permeability of the composites have been measured using vector network analyzers. Reflection loss of the iron/titanium-oxide composite powders dispersing in epoxy resin has been calculated using measured values of complex permittivity and permeability in the frequency range of 2–12 GHz. The maximum reflection loss of ?36 dB was observed at 5.0 GHz. This study shows the possibility to obtain the novel dielectric and magnetic based microwave absorbers.     

Omega shape channel LDMOS: A novel structure for high voltage applications

A new device structure for high breakdown voltage and low specific on resistance of the LDMOS device is proposed in this paper. The main idea in the proposed structure is using omega shape channel. The benefits of omega shape channel could be determined by extending depletion region in the drift region that causes low specific on resistance. Also, uniform horizontal electric field would be achieved that results in high breakdown voltage. The proposed structure is called Omega-shape Channel LDMOS (OCH-LDMOS). The simulation with two dimensional ATLAS simulator shows that the breakdown voltage increases to 712 V from 243 V of the conventional LDMOS at 12 µm drift length. Also, effective values of doping, length, and depth of Ω-shape channel are investigated.     

Characterization and organic electric-double-layer-capacitor application of KOH activated coal-tar-pitch-based carbons: Effect of carbonization temperature

The present study reports the influence of pre-carbonization on the properties of KOH-activated coal tar pitch (CTP). The change of crystallinity and pore structure of pre-carbonized CTPs as well as their activated carbons (ACs) as function of pre-carbonization temperature are investigated. The crystallinity of pre-carbonized CTPs increases with increasing the carbonization temperature up to 600 °C, but a disorder occurs during the carbonization around 700 °C and an order happens gradually with increasing the carbonization temperatures in range of 800–1000 °C. The CTPs pre-carbonized at high temperatures are more difficult to be activated with KOH than those pre-carbonized at low temperatures due to the increase of micro-crystalline size and the decrease of surface functional groups. The micro-pores and meso-pores are well developed at around 1.0 nm and 2.4 nm, respectively, as the ACs are pre-carbonized at temperatures of 500–600 °C, exhibiting high specific capacitances as electrode materials for electric double layer capacitor (EDLC). Although the specific surface area (SSA) and pore volume of ACs pre-carbonized at temperatures of 900–1000 °C are extraordinary low (non-porous) as compared to those of AC pre-carbonized at 600 °C, their specific capacitances are comparable to each other. The large specific capacitances with low SSA ACs can be attributed to the structural change resulting from the electrochemical activation during the 1st charge above 2.0 V.     

10 Gb/s optical carrier distributed network with W-band (0.1 THz) short-reach wireless communication system

Millimeter-wave (mm-wave) operated in W-band (75 GHz–0.11 THz) is of particular interests, since this frequency band can carry signals at much higher data rates. We demonstrate a 10 Gb/s optical carrier-distributed network with the wireless communication system. The mm-wave signal at carrier frequency of 0.1 THz is generated by a high speed near-ballistic uni-traveling carrier photodiode (NBUTC-PD) based transmitter (Tx), which is optically excited by optical short pulses. The optical pulse source is produced from a self-developed photonic mm-wave waveform generator (PMWG), which allows spectral line-by-line pulse shaping. Hence these optical pulses have high tolerance to fiber chromatic dispersion. The W-band 10 Gb/s wireless data is transmitted and received via a pair of horn antennas. The received 10 Gb/s data is envelope-detected and then used to drive an optical modulator at the remote antenna unit (RAU) to produce the upstream signal sending back to the central office (CO). 20 km single mode fiber (SMF) error free transmission is achieved. Analysis about the optimum repetition rate of the optical pulse source and the transmission performance of the upstream signal are also performed and discussed.     

Synthesis and microwave absorbing properties of FeNi alloy incorporated ordered mesoporous carbon–silica nanocomposite

Ordered mesoporous carbon–silica/FeNi nanocomposite were prepared by a sol–gel method and following sintering process. The electromagnetic parameters were measured in the 0.5–18 GHz range. Compared with ordered mesoporous carbon–silica composite, the permittivity of ordered mesoporous carbon–silica/FeNi nanocomposite decreases, while the permeability almost remains unchanged. The optimal reflection loss of ordered mesoporous carbon–silica/FeNi nanocomposite can reach ?45.6 dB at 11.1 GHz for a layer thickness of 3.0 mm. The enhanced microwave absorption of the mesoporous carbon–silica/FeNi nanocomposite is due to better balance between the complex permittivity and permeability, geometrical effect, as well as multiple reflections by the ordered mesoporous structure.     

Electrical properties of carbon-nanotube-network transistors in air after gamma irradiation

We experimentally evaluate the electrical properties of carbon nanotube (CNT)-network transistors before and after ⁶⁰Co gamma-ray irradiation up to 50 kGy in an air environment. When the total dose is increased, the degree of the threshold voltage (V_th) shift towards positive gate voltages in the drain current–gate voltage (I_D–V_GS) characteristics decreases for total irradiation doses above 30 kGy, although it is constant below 30 kGy. From our analysis of the I_D–V_GS characteristics along with micro-Raman spectroscopy, the gamma-ray irradiation does not change the structure of the CNT network channel for total doses up to 50 kGy; it instead generates charge traps near the CNT/SiO₂ gate insulator interfaces. These traps are located within the SiO₂ layer and/or the adsorbate on the device surface. The positively charged traps near the CNT/SiO₂ interface contribute less to the V_th shift than the interface dipoles at the CNT/metal electrode interfaces and the segment of the CNT network channel below doses of 30 kGy, while the contribution of the charge traps increases for total doses above 30 kGy. Our findings indicate the possibility of the application of CNT-network transistors as radiation detectors suitable for use in air for radiation doses above 30 kGy.     

Towards a 1 MW, 170 GHz gyrotron design for fusion application

The electrical design of different components of 1 MW, 170 GHz gyrotron such as, magnetron injection gun, cylindrical interaction cavity and collector and RF window is presented in this article. Recently, a new project related to the development of 170 GHz, 1 MW gyrotron has been started for the Indian Tokamak. TE_34,10 mode is selected as the operating mode after studied the problem of mode competition. The triode type geometry is selected for the design of magnetron injection gun (MIG) to achieve the required beam parameters. The maximum transverse velocity spread of 3.28% at the velocity ratio of 1.34 is obtained in simulations for a 40 A, 80 kV electron beam. The RF output power of more than 1 MW with 36.5% interaction efficiency without depressed collector is predicted by simulation in single-mode operation at 170 GHz frequency. The simulated single-stage depressed collector of the gyrotron predicted the overall device efficiencies >55%. Due to the very good thermal conductivity and very weak dependency of the dielectric parameters on temperature, PACVD diamond is selected for window design for the transmission of RF power. The in-house developed code MIGSYN and GCOMS are used for initial geometry design of MIG and mode selection respectively. Commercially available simulation tools MAGIC and ANSYS are used for beam–wave interaction and mechanical analysis respectively.     

Device linearity improvement and current enhancement utilizing high-to-low doping-channel FETs

We report device linearity improvement and current enhancement in both a heterostructure FET (HFET) and a camel-gate FET (CAMFET) using InGaAs/GaAs high-low and GaAs high-medium-low doped channels, respectively. In an HFET, a low doped GaAs layer was employed to build an excellent Schottky contact. In a GaAs CAMFET, a low doped layer together withn⁺andp⁺layers formed a high-performance majority camel-diode gate. Both exhibit high effective potential barriers of >1.0 V and gate-to-drain breakdown voltages of >20.0 V (atI_g=1.0 mA mm⁻¹). A thin, high doped channel was used to enhance current drivability and to improve the transconductance linearity. A 2×100 μm²HFET had a peak transconductance of 230 mS mm⁻¹and a current density greater than 800 mA mm⁻¹. The device had a transconductance of more than 80 percent of the peak value over a wide drain current range of 200 to 800 mA mm⁻¹. A 1.5×100 μm²CAMFET had a peak transconductance of 220 mS mm⁻¹and a current density greater than 800 mA mm⁻¹. Similarly, the device had a transconductance of more than 80 percent of the peak value over a wide drain current range of 160 to 800 mA mm⁻¹. The improvement of device linearity and the enhancement of current density suggest that high-to-low doped-channel devices for both an HFET and a CAMFET are suitable for high-power large signal circuit applications.