Structural and electronic properties of a single C chain doped zigzag silicene nanoribbon

The structural and electronic properties of zigzag edge silicene nanoribbons (ZSiNRs) doped with a single C chain have been studied by first-principles projector augmented wave (PAW) potential within the density function theory (DFT) framework. The results show that the C chain is almost close to a straight one which results in a transverse contraction near C chain and thus the ribbon width. The C–Si and Si–H bonds are typical ionic bonds while the C–H bond is a covalence bond. ZSiNRs doped with a single C chain are all metallic independent of the position of the C chain. All these results have been explained satisfactory from the electronegativity difference and the bound force to the electrons because of the atom radius difference between the elements.     

Effects of the edge shape and the width on the structural and electronic properties of silicene nanoribbons

Under the generalized gradient approximation (GGA), the structural and electronic properties are studied for H-terminated silicene nanoribbons (SiNRs) with either zigzag edge (ZSiNRs) or armchair edge (ASiNRs) by using the first-principles projector-augmented wave potential within the density function theory (DFT) framework. The results show that the length of the Si-H bond is always 1.50 Å, but the edge Si-Si bonds are shorter than the inner ones with identical orientation, implying a contraction relaxation of edge Si atoms. An edge state appears at the Fermi level E_F in broader ZSiNRs, but does not appear in all ASiNRs due to their dimer Si-Si bond at edge. With increasing width of ASiNRs, the direct band gaps exhibit not only an oscillation behavior, but also a periodic feature of Δ_3n > Δ_3n+1 > Δ_3n+2 for a certain integer n. The charge density contours analysis shows that the Si-H bond is an ionic bond due to a relative larger electronegativity of H atom. However, all kinds of the Si-Si bonds display a typical covalent bonding feature, although their strength depends on not only the bond orientation but also the bond position. That is, the larger deviation of the Si-Si bond orientation from the nanoribbon axis as well as the closer of the Si-Si bond to the nanoribbon edge, the stronger strength of the Si-Si bond. Besides the contraction of the nanoribbon is mainly in its width direction especially near edge, the addition contribution from the terminated H atoms may be the other reason.     

第一性原理研究CO在Cu(110)表面的吸附

本文采用基于密度泛函理论的第一性原理方法, 并同时考虑范德华力的作用, 计算并分析了CO在Cu(110)表面的吸附情况. 结果表明: 1) CO在两个表面Cu原子的短桥位位置吸附最强, 吸附能为1.28 eV. 第二稳定吸附位置为表面Cu原子的顶位, 吸附能为1.23 eV. CO在其他两个位置, 表面两个Cu的长桥位和表面四个Cu的中心位的吸附要弱一些, 约为0.86 eV 和 0.83 eV. 2) 在Cu表面吸附的CO的C-O键长有部分拉长, 这与较强的吸附能和电荷转移相应. 3) 电荷分析表明所有吸附的CO整体上从衬底上面获得部分电荷, 约为0.2 个电荷.     

第一性原理研究CO在Cu(110)表面的吸附

本文采用基于密度泛函理论的第一性原理方法,并同时考虑范德华力的作用,计算并分析了CO在Cu(110)表面的吸附情况.结果表明:1)CO在两个表面Cu原子的短桥位位置吸附最强,吸附能为1.28 e V.第二稳定吸附位置为表面Cu原子的顶位,吸附能为1.23 e V.CO在其他两个位置,表面两个Cu的长桥位和表面四个Cu的中心位的吸附要弱一些,约为0.86 e V和0.83 e V.2)在Cu表面吸附的CO的C-O键长有部分拉长,这与较强的吸附能和电荷转移相应.3)电荷分析表明所有吸附的CO整体上从衬底上面获得部分电荷,约为0.2个电荷.     

多壳层铜纳米线结构和电子特性的第一性原理研究

基于密度泛函理论框架下的第一性原理计算,系统地研究了多壳层Cu纳米线的稳定结构和电子特性.得到不同线径多壳层Cu纳米线的平衡态晶格常数相差不大,都表现出金属特性,且其单原子平均结合能和量子电导随着纳米线直径的增加而增加.纳米线中内壳层Cu原子表现出体相结构Cu原子相似的电子特性,而表面壳层由于配位数的减少,其3d态能量范围变窄且整体向费米能级发生移动.电荷密度分析表明,相对于体相Cu晶体中原子间的相互作用,纳米线表面壳层Cu原子与其最近邻原子间的相互作用明显增强.     

Tuning the electronic and magnetic properties of germanene by surface adsorption of small nitrogen-based molecules

The structural, energetic and electronic properties of germanene adsorbed with small nitrogen-based molecules, including N₂, NH₃, NO₂ and NO, have been investigated by using first-principles calculations. The results show that all nitrogen-based molecules considered bind much stronger to germanene than to graphene due to the hybridized sp²-sp³ bonding of Ge atoms. The N₂, NO and NO₂ molecules all act as an acceptor, while the NH₃ molecule donates electrons to germanene. We also found sizable band gaps (2–158 meV) are opened at the Dirac point of germanene through N₂, NH₃, and NO₂ adsorptions, but with only slightly destroying its Dirac cone shape. The NO₂ molecule also shows a heavy p-type doping character and makes germanene to be metallic. Moreover, when adsorbed by NO molecule, the germanene can change to be a ferromagnetic half-metal with 100% spin-polarization at the Fermi level. Overall, the different adsorption behaviors of small nitrogen-based gas molecules on germanene provide a feasible way to exploit chemically modified germanene for a wide range of practical applications, such as field-effect transistors, gas sensors and spintronic devices.     

First-principles study on the structural and electronic properties of ultrathin ZnO nanofilms

Using first-principles density-functional calculations, we have studied the structural and electronic properties of ultrathin ZnO {0001} nanofilms. The structural parameters, the charge densities, band structures and density of states have been investigated. The results show that there are remarkable charge transfers from Zn to O atoms in the ZnO nanofilms. All the ZnO nanofilms exhibit direct wide band gaps compared with bulk counterpart, and the gap decreases with increased thickness of the nanofilms. The decreased band gap is associated with the weaker ionic bonding within layers and the less localization of electrons in thicker films. A staircase-like density of states occurs at the bottom of conduction band, indicating the two-dimensional quantum effects in ZnO nanofilms.     

The electronic and optical properties of Cu doped CdI2

Based on the density functional pseudopotential method, the electronic structures and the optical properties of CdI₂ doped with Cu are investigated in detail. The calculation results indicate that the defect of Cu(Cd) exists steadily with a certain solubility. For the Cu doped CdI₂, the new highly localized impurity bands induced by Cu 3d states lie just across the Fermi energy at the top of the valence band. The doping of Cu induces reduction of band gap of CdI₂; red shifts are revealed in both the imaginary part of dielectric function and the absorption spectra corresponding to the change in band gaps. Moreover, the study of the reflection spectrum and the loss function shows that the doped Cu is responsible for the increased reflection peak intensity and the red shift of the plasma resonant frequency of CdI₂.     

压力下氯化钠型SnAs结构和电子性质的密度泛函理论研究

基于第一性原理计算方法研究了压力对氯化钠型SnAs结构和电子特性的影响。计算结果表明,晶格参数随着压力的增加而减小;状态密度显示随着压力的增加,As-p态的减小导致了SnAs 电导率降低。通过对电荷密度和Mulliken重叠布居的研究,分析了Sn和As原子之间的键合情况,表明了SnAs中共价键随着压力的增加而增强。进一步分析得知费米能级电子态密度的降低,可能导致了Tc的降低。     

First-principles study on structural and electronic properties of copper nanowire encapsulated into GaN nanotube

We present a systemic study of the structural and electronic properties of Cu_n nanowires (n=5, 9 and 13) encapsulated in armchair (8,8) gallium nitride nanotubes (GaNNTs) using the first-principles calculations. We find that the formation processes of these systems are all exothermic. The initial shapes are preserved without any visible changes for the Cu₅@(8,8) and Cu₉@(8,8) combined systems, but a quadratic-like cross-section shape is formed for the outer nanotube of the Cu₁₃@(8,8) combined system due to the stronger attraction between nanowire and nanotube. The electrons of Ga and N atoms in outer GaN sheath affect the electron conductance of the encapsulated metallic nanowire in the Cu₁₃@(8,8) combined system. But in the Cu₅@(8,8) and Cu₉@(8,8) combined systems, the conduction electrons are distributed only on the copper atoms, so charge transport will occur only in the inner copper nanowire, which is effectively insulated by the outer GaN nanotube. Considering the maximal metal filling ratio in nanotube, we know that the Cu₉@(8,8) combined system is top-priority in the ultra-large-scale integration (ULSI) circuits and micro-electromechanical systems (MEMS) devices that demand steady transport of electrons.     

密度泛函理论研究硫族元素取代对单层Ag2S结构和电子性质的影响

本文利用第一性原理计算讨论了硫族元素掺杂单层Ag₂S的缺陷形成能和电子性质.缺陷形成能反映了在富Ag条件下的掺杂更容易.计算得到的带隙、Mulliken布居和态密度展示出了其相应结构的电子性质.与纯单层的Ag₂S相比,Se/Te掺杂Ag₂S后的带隙显示出其电导率变化不大.基于Mulliken原子和键布居,研究了硫族元素掺杂后Ag₂S中的共价性.此外,通过讨论态密度,分析了能级的移动和电子的贡献.     

Effect of codoping with C or N on electronic structures and magnetic properties of ZnO:Cu

Using first-principles calculations based on density functional theory, we investigated systematically the electronic structures and magnetic properties of ZnO:Cu. The results indicate that Cu-doped ZnO prefers a ferromagnetic ground state and behaves like a half-metallic ferromagnet. The magnetic moment mainly localizes at Cu atom and the rest mainly comes from the spin polarized O atoms. It has been found that the ferromagnetic stability can be enhanced slightly by substituting an oxygen atom with one N atom; while the ferromagnetic stability can be weakened by replacing one O atom with a C atom. Due to absence of magnetic ion and the 100% spin polarization of the carriers in ZnO:Cu, one can expect that Cu-doped ZnO would be a useful half-metallic ferromagnet both in practical application and in theoretical studies.     

掺杂硅烯吸附CO分子的第一性原理研究

硅烯具有独特的电子、光学、热学、力学以及量子特性,在电子器件、电极材料、储氢材料、催化剂和气体传感器等领域有巨大的潜在应用价值.本文采用基于密度泛函理论的第一性原理计算方法,利用Materials Studio软件中的CASTEP程序包对硅烯与CO分子之间的吸附行为进行了研究.重点研究了硅烯掺杂方式、CO分子吸附构型及硅烯空位缺陷浓度对CO分子吸附的影响,研究结果表明：1)空位缺陷硅烯对CO分子的吸附能力最强;2)碳原子垂直朝向空位缺陷硅烯更有利于CO分子的吸附;3)硅烯对CO分子的吸附能力随其空位浓度的增加显著增强;4)空位硅烯向CO分子转移电荷,电荷转移量与二者的吸附作用强弱呈正相关.该研究可为硅烯基CO气体传感器的设计提供理论指导.     

First-principles study on structural and electronic properties of AlNSix heterosheet

Under generalized gradient approximation (GGA), the structural and electronic properties of AlN and Si sheets, hydrogen terminated AlN and Si nanoribbons with hexagonal morphology and 2, 4, 6 zigzag chains across the ribbon width and the hexagonally bonded heterosheets AlNSi_x (x=2, 4, and 6) consisting of hexagonal networks of AlN (h-AlN) strips and silicene sheets with zigzag shaped borders have been investigated using the first-principles projector-augmented wave (PAW) formalism within the density function theory (DFT) framework. The AlN sheet is an indirect semiconductor with a band gap of 2.56 eV, while the Si sheet has a metallic character since the lowest unoccupied conduction band (LUCB) and the highest occupied valence band (HOVB) meet at one k point from Γ to Z. In the semiconductor 6-ZAlNNR, for example, the states of LUCB and HOVB at zone boundary Z are edge states whose charges are localized at edge Al and N atoms, respectively. In metallic 6-ZSiNR, a flat edge state is formed at the Fermi level E_F near the zone boundary Z because its charges are localized at edge Si atoms. The hybridizations between the edge states of h-AlN strips and silicene sheets result in the appearance of border states in the zigzag borders of heterosheets AlNSi_x whose charges are localized at two atoms of the borders with either bonding or antibonding π character.     

Structural and electronic properties of a single C chain doped zigzag BN nanoribbons

The effects of single C-chain on the stability, structural and electronic properties of zigzag BN nanoribbons (ZBNNRs) were investigated by first-principles calculations. C-chain was expected to dope at B-edge for all the ribbon widths _Nz$N_z$ considered. The band gaps of C-chain doped _Nz$N_z$-ZBNNR are narrower than that of perfect ZBNNR due to new localized states induced by C-chain. The band gaps of _Nz$N_z$-ZBNNR-C(n  ) are direct except for the case of C-chain position n=2$n=2$. Band gaps of BN nanoribbons are tunable by C-chain and its position n, which may endow the potential applications of BNNR in electronics.     

Structural stabilities, electronic, elastic and optical properties of SrTe under pressure: A first-principles study

The structural, electronic, elastic and optical properties as well as phase transition under pressure of SrTe have been systematically investigated by first-principles pesudopotential calculations. Five possible phases of SrTe have been considered. Our results show that SrTe undergoes a phase transition from NaCl-type (B1) to CsCl-type (B2) structure at 10.9 GPa with a volume collapse of 9.43%, and no further transition is found. We find that SrTe prefer h-MgO instead of wurtzite (B4) structure for its metastable phase because that the ionic compound prefers a high coordination. The elastic moduli, energy band structures, real and imaginary parts of the dielectric functions have been calculated for all considered phases, and we find that a smaller energy gap yields a larger high-frequency dielectric constant. Our calculated results are discussed and compared with the available experimental and theoretical data.     

Functionalizing AlN monolayer with hydroxyl group: Effect on the structural and electronic properties

Two-dimensional (2D) materials play key role in designing and fabricating diminutive optoelectronic devices with high efficiency. In this paper, we report the results of a comprehensive first-principles study on the structural and electronic properties of the pristine and hydroxyl group OH-functionalized (OH-AlN-OH) AlN monolayer. GGA-PBE and hybrid HSE06 functionals are employed to describe the exchange-correlation potential. According to our calculations, the pristine AlN monolayer has a wide indirect band gap of 2.954(4.000) eV determined by PBE(HSE06) level of theory. Indirect-direct gap transition is obtained through the chemical functionalization and the band gap reduces to 0.775(2.125) eV. Results shows that the OH-AlN-OH monolayer is more suitable for optoelectronic applications. Finally, the strain is proven to be efficient factor to tune the electronic properties of the studied monolayers.     

单原子Bi吸附对BiOI光催化性能的影响

BiOI是一种极具潜力的光催化剂,目前其光催化效率较低,有待进一步提高.本文为了研究其微观光催化机理,提高光催化性能,采用第一性原理方法计算研究单原子Bi吸附在1I-BiOI表面体系的结构、电子和光学性质.与BiOI相比,Bi/BiOI吸附体系不仅结构稳定性强,而且具有可见光吸收高的性质.计算结果表明,单原子Bi吸附在1I-BiOI表面时,电荷从吸附原子Bi转移到1I-BiOI表面,与1I-BiOI体系相比,吸附Bi的1I-BiOI体系中Bi-B、Bi-Z和Bi-H的功函数降低,单原子Bi吸附后,Bi/BiOI体系的光吸收增强.表明吸附原子Bi与1I-BiOI之间形成了内建电场,提高了电子转移效率,抑制了光电子-空穴复合率,进而提高光催化性能.计算研究表明单原子Bi吸附能提高BiOI光催化效率,有助于设计具有更好光催化性能的新型结构.     

ZnSe小团簇结构稳定性和电子性质研究

文章研究了小尺寸的(ZnSe)n团簇(n=2-16)的结构和电子性质.通过手工搭建得到团簇结构,用DMol软件包进行结构优化和能量计算,最后分析计算结果 .研究结果表明,对于n=2-4,平面环状结构的能量最低;对于n=5,非平面环状结构的能量最低;对于n=6-12,空心笼状结构的能量最低;对于n=13,核-壳笼状结构的能量最低;对于n=14-16,依旧是空心笼状结构的能量最低.通过分析(ZnSe)_n团簇(n=2-16)的电子性质,我们可以得到,(ZnSe)_9团簇、(ZnSe)_(12)团簇具有很好的稳定性.