First-principles study on electronic and magnetic properties of Cu-doped CdS

Based on the full-potential linearized augmented plane wave (FLAPW) method, the electronic structures and magnetic properties in Cu-doped CdS diluted magnetic semiconductors (DMSs) have been investigated. The results indicate that Cu-doped CdS systems show half-metallic character with a total magnetic moment of 1.0 μ_B per supercell. In the case of two Cu atoms substituting for Cd atoms, the long-range ferromagnetism is observed, which results from Cu(3d)-S(3p)-Cd-S(3p)-Cu(3d) coupling chain. The estimated Curie temperature of Cu-doped CdS is predicted to be 400 K, higher than room temperature. These results suggest that Cu-doped CdS may be a promising half-metallic ferromagnetic material for practical applications in electronics and spintronics.     

Half-metallic ferromagnetism in Cu-doped zinc-blende ZnO from first principles study

Electronic structures and magnetism of Cu-doped zinc-blende ZnO have been investigated by the first-principle method based on density functional theory (DFT). The results show that Cu can induce stable ferromagnetic ground state. The magnetic moment of supercell including single Cu atom is 1.0 μ_B. Electronic structure shows that Cu-doped zinc-blende ZnO is a p-type half-metallic ferromagnet. The half-metal property is mainly attribute to the crystal field splitting of Cu 3d orbital, and the ferromagnetism is dominated by the hole-mediated double exchange mechanism. Therefore, Cu-doped zinc-blende ZnO should be useful in semiconductor spintronics and other applications.     

Magnetic and optical properties of Cu-doped ZnO nanosheet: First-principles calculations

We performed first-principles calculations within density-functional theory to study the magnetic and optical properties of Cu-doped ZnO nanosheet (NS). We found that Cu atom prefers to substitute for Zn site and can induce a local magnetic moment of 1.00 μ_B per unit in ZnO NS. When two Zn atoms are substituted by two Cu dopants, they tend to form a cluster and ferromagnetic (FM) ordering becomes energetically more favorable. In addition, localized states appear within the band gap due to the introduction of Cu dopant to ZnO NS. With increasing Cu concentrations, both the imaginary part of dielectric function and the absorption spectrum exhibit a red-shift behavior, which are in good agreement with the recent experimental results. The ferromagnetic coupling can be attributed to the p–d hybridization mechanism. The intriguing properties of Cu-doped ZnO NS may be promising for designing novel multifunctional nanodevice.     

Effect of codoping with C or N on electronic structures and magnetic properties of ZnO:Cu

Using first-principles calculations based on density functional theory, we investigated systematically the electronic structures and magnetic properties of ZnO:Cu. The results indicate that Cu-doped ZnO prefers a ferromagnetic ground state and behaves like a half-metallic ferromagnet. The magnetic moment mainly localizes at Cu atom and the rest mainly comes from the spin polarized O atoms. It has been found that the ferromagnetic stability can be enhanced slightly by substituting an oxygen atom with one N atom; while the ferromagnetic stability can be weakened by replacing one O atom with a C atom. Due to absence of magnetic ion and the 100% spin polarization of the carriers in ZnO:Cu, one can expect that Cu-doped ZnO would be a useful half-metallic ferromagnet both in practical application and in theoretical studies.     

First principles study of structural, vibrational and electronic properties of graphene-like MX2 (M=Mo, Nb, W, Ta; X=S, Se, Te) monolayers

Using first principles calculations, we investigate the structural, vibrational and electronic structures of the monolayer graphene-like transition-metal dichalcogenide (MX₂) sheets. We find the lattice parameters and stabilities of the MX₂ sheets are mainly determined by the chalcogen atoms, while the electronic properties depend on the metal atoms. The NbS₂ and TaS₂ sheets have comparable energetic stabilities to the synthesized MoS₂ and WS₂ ones. The molybdenum and tungsten dichalcogenide (MoX₂ and WX₂) sheets have similar lattice parameters, vibrational modes, and electronic structures. These analogies also exist between the niobium and tantalum dichalcogenide (NbX₂ and TaX₂) sheets. However, the NbX₂ and TaX₂ sheets are metals, while the MoX₂ and WX₂ ones are semiconductors with direct-band gaps. When the Nb and Ta atoms are doped into the MoS₂ and WS₂ sheets, a semiconductor-to-metal transition occurs. Comparing to the bulk compounds, these monolayer sheets have similar structural parameters and properties, but their vibrational and electronic properties are varied and have special characteristics. Our results suggest that the graphene-like MX₂ sheets have potential applications in nano-electronics and nano-devices.     

Magnetism of Fe clusters embedded in Cu,Ag, and Au fcc matrices: density functional calculations

We present extensive first principles density functional theory (DFT) calculations dedicated to analyze the magnetic properties of small Fe _n clusters (n = 2,3) embedded in Cu fcc, Ag fcc and Au fcc matrices. We consider several dimers and trimers having different interatomic distances. In all cases the Fe atoms are embedded as substitutional impurities in the metallic network. For the case of the Fe dimers we have considered two magnetic configurations: ferromagnetic (antiferromagnetic), when the atomic magnetic moment of the Fe atoms are parallel (antiparallel) each other. For the case of dimers immersed in Cu and Ag matrices, the ground state corresponds to the ferromagnetic Fe dimer whose interatomic distance is a/√2. For Fe dimer immersed in the Au matrix the ground state corresponds to a ferromagnetic coupling when the interatomic distance is a√(3/2). In the case of the Fe trimers we have considered three or four magnetic configurations, depending on the Fe cluster geometry. For the case of Fe trimer immersed in Cu and Ag matrices we have found that the ground state corresponds to the ferromagnetic trimer forming an equilateral triangle with an interatomic distance equal to a/√2. The ground state for the Fe trimer immersed in the Au matrix corresponds to the ferromagnetic Fe trimer forming a right angle triangle.     

First-principles study of ferromagnetism in Zn- and Cd-doped SnO2

The electronic structures and magnetic properties of Zn- and Cd-doped SnO₂ are investigated using first-principles calculations within the generalized gradient approximation (GGA) and GGA+U scheme. The substitutional Zn and Cd atoms introduce holes in the 2p orbitals of the O atoms and the introduced holes are mostly confined to the minority-spin states. The magnetic moment induced by doping mainly comes from the 2p orbitals of the O atoms, among which the moment of the first neighboring O atoms around the dopant are the biggest. The U correction for the anion-2p states obviously increases the moment of the first neighboring O atoms and transforms the ground states of the doped SnO₂ from half-metallic to insulating. The magnetic coupling between the moments induced by two dopants is ferromagnetic and the origin of ferromagnetic coupling can be attributed to the p–d hybridization interaction involving holes.     

First-principles study on the origin of ferromagnetism in n-type Cu-doped ZnO

Based on the density functional calculations with the GGA+U correction, we elucidate the origin of the experimentally reported ferromagnetism in n-type Cu-doped ZnO. Pure Cu-doped ZnO shows the unoccupied 3d states in the gap introduced by Cu, resulting in the insulating ground state and weak magnetic exchange interactions, in contrast to the half-metallic ground state and high ferromagnetic stability predicted by the calculations without U correction. However, the electron traps induced by Cu in n-type Cu-doped ZnO may lead to the partial occupancy of the Cu gap states, which stabilize the ferromagnetic ordering between two Cu atoms.     

Reactivity of layer type transition metal chalcogenides towards oxidation

X-ray excited photoemission spectroscopy has been used to correlate the electronic structure of the layered compounds MoS₂, MoSe₂, WSe₂, MoTe₂ and PtS₂ to their reactivity. We find that the ionicity decreases in the sequence given above, indicated by the changes observed in the density of states in the valence band. The reactivity towards oxidation of the investigated materials increases in the sequence given above. After oxidation in air (several hours to days) or after electrochemical oxidation (0.01 to 1 C) we detect only small amounts of Mo oxide for MoS₂, the selenides are more easily oxidized, whereas MoTe₂ fully corrodes. The results indicate that the differences in reaction behavior are correlated to the relative contributions of metal d-states in the valence band and conduction band of the compounds.     

Doping level and environment dependence of structural stability and magnetic properties in Mn-doped WS2 bilayer in first principles

We carried out first-principles electronic structure calculation to study the structural stability and magnetic properties of Mn-doped WS₂ ultra-thin films within the density functional theory. Adopting various configurations of Mn doping into WS₂ bilayer, we find that the magnetic phase can be manipulated among the ferromagnetic, antiferromagnetic, or ferrimagnetic phases by altering doping level and growth environment. Magnetic phase and strength are determined by magnetic coupling of Mn dopants 3d electrons which can be attributed crucially to the exchange interaction mediated by neighboring S atoms 3p electrons. Accompanying to the magnetic phase transition, the electronic structure reveals that transport properties switch from semiconducting with various bandgap to half-metallic states. This result implicates possible way to develop magnetic semiconductors based on Mn doped 2D WS₂ ultra-thin films for spintronics applications.     

Laser excited Raman spectrum of SnSe2

We report the Raman spectrum of a layer type semiconducting compound SnSe₂ with one Sn atom surrounded by six selenium atoms of the layer in an octahedral configuration. A correlation chart relating the irreducible representations of the site groups with those of the factor group has been established. Two Raman active modes at 320 and 399 cm^-1 have been observed and assigned E_g and A_1g representations respectively. Mode degeneracy observed in MoS₂, MoTe₂ and MoSe₂ was not observed in SnSe₂.     

Electronic structure and half-metallic property of Si<Subscript>3</Subscript>CaC<Subscript>4</Subscript>

The electronic structures and magnetic properties of Si₃CaC₄ in zinc-blende phase has been studied by employing the first-principles method based on density functional theory (DFT). The calculations predict stable ferromagnetic ground state in Si₃CaC₄, resulting from calcium substitution for silicon. The calculated total magnetic moment is 2.00 μ _B per supercell, which mainly arises from the Ca and neighboring C atoms. Band structures and density of states studies show half-metallic (HM) ferromagnetic property for Si₃CaC₄. The ferromagnetic coupling is generally observed between the Ca and C atoms. The ferromagnetism of Si₃CaC₄ can be explained by the hole-mediated double exchange mechanism. The sensitivity of half-metallicity of Si₃CaC₄ as a function of lattice constant is also discussed, and the half-metallicity can be kept in a wider lattice constant range.     

Ferromagnetic properties of Cu-doped ZnS: A density functional theory study

Using plane-wave pseudopotential (PWPP) method, the magnetism and spin-resolved electronic properties of Cu-doped ZnS system are studied. Our calculations indicate that ferromagnetic (FM) state is ground state in Cu-doped ZnS. The FM coupling strength in ZnS doping with Cu fluctuates with the variation of distance between two dopants and the fluctuation gets larger with increase in distance. Room temperature ferromagnetism can be observed in Cu-doped ZnS with high dopant concentration. Formation energy calculation implies that the clustering effect is not obvious in Cu-doped ZnS. Thus, Cu-doped ZnS can be a promising dilute magnetic semiconductor (DMS), which promises to be free of magnetic precipitates.     

Study of point defect on the stability and magneto-optical properties of ZnO:Cu by first-principles

ABSTRACT

The magnetic and optical properties of Cu-doped ZnO systems have been widely studied in experimental, but the magnetic sources of the coexistence of Cu replacing Zn and the O vacancy systems are controversial. First-principles can compensate for the experimental deficiencies. The effects of Cu-doping and point defects on the magnetic and optical properties of ZnO were studied using geometry optimisation and energy calculation based on first-principle generalised gradient approximation?+?U method of the density functional theory. Results indicate that the band gaps and absorption spectra of Zn₁₅CuO₁₆, Zn₁₄CuO₁₆, and Zn₁₅Cu_iO₁₆ systems become narrowed and red-shifted, respectively, compared with those of pure ZnO. In addition, the system with Cu replaces Zn, and Zn vacancy coexists in ZnO. The doping system has the relatively largest magnetic moment and can achieve a ferromagnetic long-range order, and the Curie temperature can reach room temperature. As an electron injection source, this system can reach 100% electron spin-polarisation and exhibit half-metallic properties, which are relatively favourable for dilute magnetic semiconductor (DMS). Therefore, this system has certain theoretical reference value in the design and preparation of light-emitting devices or DMS.     

First-principles study on ferromagnetism in C-doped AlN

First-principles calculations are performed to study the electronic structures and magnetic properties of C-doped AlN. Both generalized gradient approximation (GGA) and GGA+U calculations show that a substitutional C atom introduces magnetic moment of about 1.0 μB, which comes from the partially occupied 2p orbitals of the C, its first neighboring Al and first neighboring N atoms (GGA) or out-of-plane first and fifth neighboring N atoms (GGA+U), among which the atomic moment of the C is the biggest. The U correction for the anion-2p states obviously changes the magnetic moment distribution of Al and N atoms and transforms the ground state of C-doped AlN to insulating from half-metallic. The C atoms can induce ferromagnetic ground state with long-range couplings between the moments in C-doped AlN. The ferromagnetic coupling can be explained in terms of the two band coupling model.     

Magnetic properties of a Na-doped WS<Subscript>2</Subscript> monolayer in the presence of an isotropic strain

The magnetic properties of Na-doped WS₂ monolayer under strain are investigated by ab initio methods. Without strain, the Na-doped WS2 monolayer is a magnetic nanomaterial and the total magnetic moment is about 1.07μ_B. We applied strain to Na-doped WS₂ monolayer from–10% to 10%. The magnetic properties are modified under different strain; the doped system gets a maximum value of at 2.01μ_B 10% tensile strain and a minimum value of at 0μ_B–10% compressive strain. The coupling between 3p states of S and 5d states of W is responsible for the strong strain effect on the magnetic properties. Our studies predict Na-doped WS₂ monolayer under strain to be candidates for application in spintronics.     

Nanoscale Transition Metal Dichalcogenides: Structures,Properties, and Applications

Transition metal dichalcogenides (TMDs), such as MoS₂, MoSe₂, WS₂, and WSe₂, are layered materials with strong in-plane ionic-covalent bonds and weak out-of-plane van der Waals interactions, enabling formation of various nanostructures, such as nanotubes, nanoribbons, nanoflakes, and fullerene-like nanoparticles. Various remarkable properties have been found recently in these nanostructures, opening up brand new opportunities for their applications in nanoelectronics, optoelectronics, spintronics and structural materials. In this article, we present recent advances in the study of two-dimensional TMDs and their derivatives with special emphasis on structures, morphologies, properties (electronic, magnetic, thermal, mechanical), and applications (transistors, sensors, catalysts, lubricants, and composite materials). In addition, routes for modifying these properties by chemical doping, defect engineering, strain engineering, and electric fields are discussed. Our intent is to present a state-of-the-art view in this fast evolving field, with a balanced theoretical and experimental perspective.     

Raman spectra of IVB and VIB transition metal disulfides using laser energies near the absorption edges

In this paper, we present Raman spectra of ZrS₂, HfS₂, MoS₂ and WS₂ using laser energies near the energies of the absorption edges. The Raman spectra probe the properties of the first-excited electronic state and the nature of the electron-phonon coupling. The spectra of the IVB disulfides are independent of the laser excitation energy, suggesting weak electron-phonon interaction. In contrast, additional Raman bands appear in the spectra of the VIB disulfides as the laser energy approaches the band gap energy. The new modes in the spectra of MoS₂ and WS₂ cannot be assigned as first-order processes nor as combination bands of the phonons with zero momentum. The resonance Raman scattering of MoS₂ is analyzed in terms of second-order scattering due to the coupling of phonon modes of nonzero momentum with an electronic transition associated with excitonic states.     

Laser control of magneto-polaron in transition metal dichalcogenides triangular quantum well

We study the dynamic of magneto-polaron condensate in monolayer two dimensional (2D) transition metal dichalcogenides (TMDs) materials of 2H types in triangular quantum well potential. Within both the quantum mechanical Schrödinger approach (QMSA) and the improved Wigner-Brillouin theory (IWBT), Landau energies levels (LELs) are derived. We have shown that the magneto-polaron condensation is enhanced in monolayer MoSe₂ compared to MoS₂, WS₂ and WSe₂. We derive various levels by increasing a magnetic field and laser parameter. We show that the quantum confinement lifts the degeneracy of the Landau levels (LLs) resulting in an anticrossing and crossing. The dephasing effect due to the quantum well potential's parameter plays an important role in the magneto-polaron energy corrections, which are also affected by the amplitude of the laser field. The system presents Stückelberg oscillations which is important for practical applications.     

MPb10（M=Ti，V，Cr，Cu，Pd）几何结构和磁性的密度泛函计算研究

采用密度泛函理论（density functional theory,DFT）中的广义梯度近似（generalized gradient approximation,GGA）对MPb₁₀（M=Ti,V,Cr,Cu,Pd）四种同分异构体的几何结构和磁性进行了计算研究.发现在四种同分异构体中,D_4d结构的MPb₁₀（M=Ti,V,Cr,Cu,Pd）具有最大的结合 关键词： 几何结构 磁性 密度泛函