Spin-dependent current in resonant tunneling diode with ferromagnetic GaMnN layers

The spin-polarized tunneling current through a double barrier resonant tunneling diode (RTD) with ferromagnetic GaMnN emitter/collector is investigated theoretically. Two distinct spin splitting peaks can be observed at current-voltage (I-V) characteristics at low temperature. The spin polarization decreases with the temperature due to the thermal effect of electron density of states. When charge polarization effect is considered at the heterostructure, the spin polarization is enhanced significantly. A highly spin-polarized current can be obtained depending on the polarization charge density.     

Hole core in superconductors and the origin of the Spin Meissner effect

It is proposed that superconductors possess a hidden ‘hole core’ buried deep in the Fermi sea. The proposed hole core is a small region of the Brillouin zone (usually at the center of the zone), where the lowest energy states in the normal state reside. We propose that in the superconducting state these energy states become singly occupied with electrons of a definite spin helicity. In other words, that holes of a definite spin helicity condense from the top to the bottom of the band in the transition to superconductivity, and electrons of that spin helicity ‘float’ on top of the hole core, thus becoming highly mobile. The hole core has radius q₀ = 1/2λ_L, with λ_L the London penetration depth, and the electrons expelled from the hole core give an excess negative charge density within a London penetration depth of the real space surface of the superconductor. The hole core explains the development of a spin current in the transition to superconductivity (Spin Meissner effect) and the associated negative charge expulsion from the interior of metals in the transition to superconductivity, effects we have proposed in earlier work to exist in all superconductors and to be at the root of the Meissner effect.     

Unrestricted Dirac-Fock theory: Relativistic determination of core polarization hyperfine interactions

The unrestricted Dirac-Fock (UDF) method is developed for determining relativistic contributions to the hyperfine interaction, notably that due to core polarization. Radial core-polarization of the one-electron (jj-coupled) spin orbitals is obtained by relaxing the restraint in restricted Dirac-Fock (RDF) theory that the radial part be independent of the magnetic quantum number, the projection m_j of j. Relativistic effects on the core polarization are obtained by comparison with results obtained from the non-relativistic spin polarized Hartree-Fock (m_s unrestricted) and spin plus orbital polarized Hartree- Fock (m_s plus m_j unrestricted) calculations. For the 5d transition series ions, the relativistic core polarization enhancement factor, S_s(z), is determined to be about a factor of two and so is much smaller than the isomer shift charge density enhancement factor (≈6) found earlier for these same ions. Comparison is made with limited experimental data available to date; for the case of atomic Re, excellent agreement is obtained with experiment.     

Unconventional ferromagnetism and transport properties of (In,Mn)Sb dilute magnetic semiconductor

Narrow-gap higher mobility semiconducting alloys In_1-xMn_xSb were synthesized in polycrystalline form and their magnetic and transport properties have been investigated. Ferromagnetic response in In_0.98Mn_0.02Sb was detected by the observation of clear hysteresis loops up to room temperature in direct magnetization measurements. An unconventional (reentrant) magnetization versus temperature behavior has been found. We explained the observed peculiarities within the frameworks of recent models which suggest that a strong temperature dependence of the carrier density is a crucial parameter determining carrier-mediated ferromagnetism of (III,Mn)V semiconductors. The correlation between magnetic states and transport properties of the sample has been discussed. The contact spectroscopy method is used to investigate a band structure of (InMn)Sb near the Fermi level. Measurements of the degree of charge current spin polarization have been carried out using the point contact Andreev reflection (AR) spectroscopy. The AR data are analyzed by introducing a quasiparticle spectrum broadening, which is likely to be related to magnetic scattering in the contact. The AR spectroscopy data argued that at low temperature the sample is decomposed on metallic ferromagnetic clusters with relatively high spin polarization of charge carriers (up to 65% at 4.2 K) within a cluster.     

Induced spin polarization of copper spin 1/2 molecular layers

Thin films of the metal organic molecule bis(4-cyano-2,2,6,6-tetramethyl-3,5-heptanedionato)copper(II) (or Cu(CNdpm)₂), (C₂₄H₃₆N₂O₄Cu, Cu(II)), deposited on ferromagnetic Co(111) at 40 K, exhibit a finite electron spin polarization. The spin polarization magnitude and sign for Cu(CNdpm)₂ deposited on Co(111) is coverage dependent, but deviates from the mean field expectations for a simple paramagnet on a ferromagnetic substrate. The spin asymmetry is seen to favor select molecular orbitals, consistent with the predicted single molecule density of states. The overlayer polarization observed indicates a strong influence of the ferromagnetic Co(111) substrate and some extra-molecular magnetic coupling.     

Verwey transition in spin polarization of field-emitted electrons from 〈1 1 0〉-oriented single crystal magnetite whisker

We measured temperature dependence of a spin polarization of field-emitted electrons from a single-crystalline magnetite (Fe₃O₄) whisker with 〈1 1 0〉 orientation. The spin polarization of emitted electrons began to increase above 130 K corresponding to the temperature of Verwey point (T_v). The increase is considered as reflection of the change of the spin state near the Fermi level due to the Verwey transition. Our experimental results support a localization of t_2g orbital electrons below the Verwey point and a model of charge ordering for magnetite.     

Anisotropic linear-polarization luminescence in CdTe/CdMnTe quantum wires

We theoretically studied anisotropic linear optical polarization properties in CdTe/Cd_0.75Mn_0.25Te quantum wires (QWRs) by using the multi-band effective mass method. In this QWR system, the spatial distribution of the Mn composition influences both the lateral quantum confinement and the sp-d exchange coupling. The calculated expectation value of the hole spin demonstrates that the hole spin is reoriented along the external magnetic field when applying the magnetic field parallel to the QWR. The hole-spin reorientation causes anisotropic behavior in the Zeeman shift and the linearly polarized optical transitions, which sensitively depends on the Mn spatial distribution. Such characteristic features appeared in the QWR have been demonstrated experimentally and compared with the theoretical calculations.     

High-temperature ferromagnetism in Si1 ? x Mn x (x ≈ 0.5) nonstoichiometric alloys

It has been found that the Curie temperature (T _C ?? 300 K) in nonstoichiometric Si_{1 ? x} Mn _x alloys slightly enriched in Mn (x ?? 0.52?C0.55) in comparison to the stoichiometric manganese monosilicide MnSi becomes about an order of magnitude higher than that in MnSi (T _C ?? 30 K). Deviations from stoichiometry lead to a drastic decrease in the density of charge carries (holes), whereas their mobility at about 100 K becomes an order of magnitude higher than the value characteristic of MnSi. The high-temperature ferromagnetism is ascribed to the formation of defects with the localized magnetic moments and by their indirect exchange interaction mediated by the paramagnetic fluctuations of the hole spin density. The existence of defects with the localized magnetic moments in Si_{1 ? x} Mn _x alloys with x ?? 0.52?C0.55 is supported by the results of numerical calculations performed within the framework of the local-density-functional approximation. The increase in the hole mobility in the nonstoichiometric material is attributed to the decay of the Kondo (or spin-polaron) resonances presumably existing in MnSi.     

On the possible coexistence of itinerant-electron antiferromagnetism with the itinerant-electron ferromagnetism

It is shown that in an electron gas with coexisting charge density wave and spin density wave a spontaneous magnetization can occur. In the first paramagnetic region (T,T_t;Δ_s = Δ_t = 0) the spin susceptibility is independent of temperature (Pauli paramagnetism). In the second paramagnetic region (T_K<T<T_t,Δ_t≠0;Δ_s=0) the total susceptibility of the spin density wave is enhanced by a temperature dependent paramagnetic susceptibility with a Curie type law. This reflects the instability of the system to the formation of a charge density wave or to ferromagnetism. At sufficiently low temperatures (T～T_K) the spin susceptibility is anomalous great a fact which cannot be explained with the standard Fedders-Martin theory. Experimental results for pure chromium are in good agreement with our predictions.     

Spin transistor and quantum spin Hall-effects in CdBxF2−x–p-CdF2–CdBxF2−x sandwich nanostructures

Planar CdB_xF_2−x–p-CdF₂–CdB_xF_2−x sandwich nanostructures prepared on the surface of the n-type CdF₂ bulk crystal are studied to register the spin transistor and quantum spin Hall-effects. The current–voltage characteristics of the ultra-shallow p⁺–n junctions verify the CdF₂ gap, 7.8 eV, and the quantum subbands of the 2D holes in the p-type CdF₂ quantum well confined by the CdB_xF_2−xδ-barriers. The temperature and magnetic field dependencies of the resistance, specific heat and magnetic susceptibility demonstrate the high temperature superconductor properties for the CdB_xF_2−xδ-barriers. The value of the superconductor energy gap, 2Δ = 102.06 meV, determined by the tunneling spectroscopy method appears to be in a good agreement with the relationship between the zero-resistance supercurrent in superconductor state and the conductance in normal state, πΔ/e, at the energies of the 2D hole subbands. The results obtained are evidence of the important role of the multiple Andreev reflections in the creation of the high spin polarization of the 2D holes in the edged channels of the sandwich device. The high spin hole polarization in the edged channels is shown to identify the mechanism of the spin transistor and quantum spin Hall-effects induced by varying the top gate voltage, which is revealed by the first observation of the Hall quantum conductance staircase.     

Band renormalization and spin polarization of MoS2 in graphene/MoS2 heterostructures

Transition metal dichalcogenides exhibit spin–orbit split bands at the K‐point that become spin polarized for broken crystal inversion symmetry. This enables simultaneous manipulation of valley and spin degrees of freedom. While the inversion symmetry is broken for monolayers, we show here that spin polarization of the MoS₂ surface may also be obtained by interfacing it with graphene, which induces a space charge region in the surface of MoS₂. Polarization induced symmetry breaking in the potential gradient of the space charge is considered to be responsible for the observed spin polarization. In addition to spin polarization we also observe a renormalization of the valence band maximum (VBM) upon interfacing of MoS₂ with graphene. The energy difference between the VBM at the Γ‐point and K‐point shifts by ～150 meV between the clean and graphene covered surface. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

On the electronic properties of the sulfur nitride polymer (SN)x

Results of an ab initio LCAO Hartree-Fock crystal orbital calculation are reported for (SN)_x using a double-zeta type atomic basis set. In contrast with previous minimal basis calculations the width of the metallic half-filled band is only ～ 4 eV in this study. The calculated effective mass (1.7m_e), electron state density [0.14/(ev spin molecule)] and transferred charge (～0.4e from sulfur to nitrogen) are also in good agreement with experiment.     

Structural,electronic and magnetic properties of hcp Fe,Co and Ni nanowires encapsulated in zigzag carbon nanotubes

The structural, electronic and magnetic properties of hcp transition metal (TM = Fe, Co or Ni) nanowires TM₄ encapsulated inside zigzag nanotubes C(m, 0) (m = 7, 8, 9, 10, 11 or 12), along with TM _n (n = 4, 10 or 13) encapsulated inside C(12, 0), have been systematically investigated using the first-principle calculations. The results show that the TM nanowires can be inserted inside a variety of zigzag carbon nanotubes (CNTs) exothermically, except from the systems TM₄@(7, 0) and TM₁₃@(12, 0) which are endothermic. The charge is transferred from TM nanowires to CNTs, and the transferred charge increases with decreasing CNT diameter or increasing nanowire thickness. The magnetic moments of hybrid systems are smaller than those of the freestanding TM nanowires, especially for the atoms on the outermost shell of the nanowires. The magnetic moment per TM atom of TM/CNT system increases with increasing CNT diameter or decreasing nanowire thickness. Both the density of states and spin charge density analysis show that the spin polarization and the magnetic moments of all hybrid systems mainly originate from the TM nanowires, implying these systems can be applied in magnetic data storage devices.     

Light nuclei as distinct probes for transient magnetic fields

Salient features of transient magnetic fields are brought out from nuclear spin precession measurements on light ions penetrating polarized Fe-, Ni- and Gd-hosts. At low velocities ion fractions with singleK-shell vacancies, at high velocities H-like charge state fractions, can account for the observed precessions. The data suggest a sharp reduction of theK-shell field at a velocityv _ion?0.5v ₀. Large degrees ofK-shell polarization have been derived for C- and O-ions. Measurements in different ferromagnets show that the transient fields scale with the polarized electron density of the host.     

AB initio energy band structure of polysulfur nitride, (SN)x

All electron energy band structure is reported for an infinite one-dimensional model of polysulfur nitride, (SN)_x, using the ab initio LCAO Hartree-Fock method. The calculated values of the effective mass and density of states at the Fermi level are ?0.72 m_e and 0.06 states/(eV spin molecule), respectively. An appreciable amount of charge transfer (0.30 e) from sulfur to nitrogen was obtained. Finally, comparison is made with the results of a semi-empirical version of the same method.     

Investigation of Heusler alloy-semiconductor interfaces

Using the electron density functional theory, the electronic structure and magnetic properties of possible contacts on the (001) interface between XYZ and X ₂ YZ Heusler alloys (NiMnSb, Co₂ MnSi) and III–V semiconductors (InP, GaAs) are studied. It is demonstrated that, in both cases, the high degree of spin polarization is achieved in Ni/P(As) or Co/As contacts. The influence of structure defects located on the surface and interfaces on the spin polarization at the Fermi level is studied. The nature of surface states at the Heusler alloy-semiconductor interface and electron factors that favor preservation or loss of the half-metallic behavior in the contacts are analyzed. Calculations of the local magnetic moments show that the magnetic properties of atoms in the contact are not changed significantly at the interface because of the partial compensation of their coordination by atoms of the semiconductor. The spin polarization can be increased by doping of the X element sublattice.     

Controlled rotation and orientation of rubrene particles and Escherichia coli using optical tweezers

Optical trapping and rotating of suspended micro-sized rubrene particles were performed using optical tweezers with circularly polarized light. The experimental results show that the rotation speed of the rubrene particles is proportional to the laser power, and the orientation of the rubrene particles can be controlled by the optical tweezers with linearly polarized light. Interestingly, by combining with the rubrene particle, the Escherichia coli (E. coli) can be rotated and oriented by optical tweezers. However, the rotating and orientating are mainly determined by the characteristics of rubrene particles. Our experiment provides a simple and convenient way to orient biological particles even if they are not sensitive to the polarization of the laser beam. Moreover, the rubrene can emit strong fluorescence when excited by the laser at the wavelength of 532 nm, and which can be potential applied to manipulate other particles with the fluorescence characteristics.     

Spin polarization measurements of Co2Mn (Ga0.5Sn0.5) thin films

Co₂MnGa_0.5Sn_0.5 (CMGS) thin films were epitaxially grown on MgO (0 0 1) substrates by magnetron sputtering and the current spin polarizations of the films with different post annealing conditions were measured by the point contact Andreev reflection method. The film deposited at a substrate temperature of 150 °C had a B2 structure and its spin polarization was estimated to be 59%. The film was ordered to the L2₁ structure by annealing at 600 °C, and the spin polarization was enhanced to 66%. The spin polarization and the intensity of the L2₁ diffraction showed clear correlation, suggesting L2₁ ordering is essential to achieve higher spin polarization of this quaternary Heusler alloy.     

Ab initio study of electronic structures and magnetism in ZnMnTe and CdMnTe diluted magnetic semiconductors

In this work, we aimed to examine the spin-polarized electronic band structures, the local densities of states as well as the magnetism of ZnMnTe- and CdMnTe-diluted magnetic semiconductors (DMSs) in the ferromagnetic phase, and with 25% of Mn. The calculations are performed by the recent ab initio full potential augmented plane waves plus local orbitals (FP−L/APW+lo) method within the spin-polarized density-functional theory and the local spin density approximation. We have determined the exchange splittings produced by the Mn d states: Δ_x(d) and Δ_x(pd), and we found that the effective potential for the minority spin is more attractive than that for the majority spin. Also, we show the nature of the bonding from the charge spin-densities calculations, and we calculate the exchange constants N₀α and N₀β, which mimics a typical magneto-optical experiment. The calculated total magnetic moment is found to be equal to 5μ_B for both DMSs. This value indicates that every Mn impurity adds no hole carriers to the perfect ZnTe and CdTe crystals. Furthermore, we found that p–d hybridization reduces the local magnetic moment of Mn and produces small local magnetic moments on the nonmagnetic Te, Zn and Cd sites.     

The electronic structure and magnetic properties of metallic antiferromagnetic Co[(CH3PO3)(H2O)] studied by first-principles calculations

The electronic structure, the metallic and magnetic properties of metal phosphonate Co[(CH₃PO₃)(H₂O)] have been studied by first-principles calculations, which were based on the density-functional theory (DFT) and the full potential linearized augmented plane wave (FPLAPW) method. The total energy, the spin magnetic moments and the density of the states (DOS) were all calculated. The calculations reveal that the compound Co[(CH₃PO₃)(H₂O)] has a stable metallic antiferromagnetic (AFM) ground state and a half-metallic ferromagnetic (FM) metastable state. Based on the spin distribution obtained from calculations, it is found that the spin magnetic moment of the compound is mainly from the Co²⁺, with some small contributions from the oxygen, carbon and phosphorus atoms, and the spin magnetic moment per molecule is 5.000μ_B, which is in good agreement with the experimental results.