Adsorption of SO2 molecule on doped (8, 0) boron nitride nanotube: A first-principles study

Adsorptions of SO₂ on Al-, Ca-, Co-, Cu-, Ge-, Ni-, and Si-doped (8, 0) boron nitride nanotube (BNNT) have been studied using first-principles approach based on density functional theory in order to exploit their potential applications as SO₂ gas sensors. The electronic properties of the BNNT-molecule adsorption adducts are strongly dependent on the dopants. The most stable adsorption geometries, adsorption energies, charge transfers, and density of states of these systems are thoroughly discussed. This work reveals that the sensitivity of (8, 0) BNNT based chemical gas sensors for SO₂ can be drastically improved by introducing appropriate dopant. Si is found to be the best choice among all the dopants.     

Magnetic and electronic properties of zigzag BN nanoribbons with nonmetallic atom terminations: A first-principles study

The boron nitride (BN) nanosheet is an isostructural analog of graphene and can be viewed as the structure that C atoms in graphene are replaced with alternating B and N. The easily modulated band-gap of BN nanosheet by simply passivating its edge(s) makes it is promising for many potential applications in nanodevices and nanoelectronics. We further systematically theoretically study the magnetic and electronic properties of passivated-ZBNNR by nonmetallic atom(s), here. According to our calculations, all considered structures show magnetic feature, and the ZBNNRs can be metal or half-metal or semiconductor depending on the termination details. The great application-potential of the passivated-ZBNNRs is further confirmed based on our results.     

First-principles study of transition metal linear monoatomic chains adsorption on boron nitride nanotube

Structural, electronic and magnetic properties of six 3d transition metals (TM=V, Cr, Mn, Fe, Co and Ni) linear monoatomic chains adsorbed on the (5,5) boron nitride nanotube (BNNT) at five different sites have been investigated by first-principle calculations. The results indicate all TM chains can be spontaneously adsorbed on the outer surface of the BNNT. The stable adsorption sites are different for different TM chains. All TM chains can be adsorbed on the N site, while the adsorption on the Z site is unstable. The dispersion character occurs in energy band curves of stable TM/BNNT systems and bring about the band gap disappearance in comparison with that of pure (5,5) BNNT. Interestingly, the TM/BNNT systems with nearly half-filled 3d metals V and Cr at H and N sites, as well as Mn at A site show a half-metal character and are usable in spintronics devices. The different electronic properties of BNNT can also be achieved through decorations of the same TM chain on different sites. The TM chain adsorbed BNNT systems exhibit high stability, promising electronic properties and high magnetic moments, which may be useful for a wide variety of next-generation nanoelectronic device components.     

Influence of Cu electroplating solutions on boron carbon nitride (BCN) film

Cu electroplating is required for the fabrication of Cu/low-k interconnections. The permeation of a plating solution into low-k films during Cu electroplating is a serious challenge for 45-nm nodes and more complex devices. We investigated the influence of Cu electroplating solutions on boron carbon nitride (BCN) as a low-k film. After dipping it into a Cu electroplating solution that contained additives, the BCN film's hydrophilic surface changed to a hydrophobic surface, and the incorporation of water into the BCN film was suppressed by surfactant adsorption. Sulfuric residue was detected on the BCN sample by thermal desorption spectroscopy after treatment in the Cu electroplating solution with additives; however, it was found through electrical measurements that this solution did not affect the leakage current or the dielectric constant of the BCN film. We successfully fabricated an electroplating Cu layer on a BCN film with good adhesion, and we believe that this BCN film is a sufficiently useful material for Cu/BCN integration in LSI.     

六方氮化硼单层中一种(CN)3VB缺陷的第一性原理计算

二维六方氮化硼(hBN)的点缺陷最近被发现可以实现室温下的单光子发射,而成为近年的研究热点.尽管其具有重要的基础和应用研究意义,hBN中发光缺陷的原子结构起源仍然存在争议.本文采用基于密度泛函理论的第一性原理计算,研究hBN单层中一种B空位附近3个N原子被C替代的缺陷(CN)3VB.在hBN的B空位处,3个N原子各自带...     

Size-dependent electronic structures of boron carbonitride (BC2N) nanotubes. A DFT approach

The electronic structures and physical properties of zigzag BC₂N (n,0; n = 4–10) and armchair BC₂N (n,m; n = m = 4–10) nanotubes (type III) are studied by using density functional theory with the generalized gradient approximation. From a comparison of the binding energies, it is inferred that in the large diameter BC₂N nanotubes, the zigzag form is thermally more stable than the armchair form. BC₂N nanotubes (with the exception of (4,0) which is conductor) are gapless semiconductors. Depend on the chirality index, the zigzag forms of BC₂N nanotubes have narrower band gap than the armchair form. Semiconductor character in the studied BC₂N nanotubes is due to contribution of p electrons in the Fermi level. Mulliken population analyses show that significant amounts of electron charge are transferred between atoms; which suggests the existence of polar covalent bonds in the BC₂N nanotubes.     

A DFT study for adsorption of CO on Ni,Pd and Pt atoms doped (7, 0) boron nitride nanotube

By using density functional theory calculations, we investigated the structural, electronic and magnetic properties of carbon monoxide (CO) adsorption on the pure, Ni, Pd and Pt doped atoms in zigzag single-walled (7, 0) boron nitride nanotubes (BNNTs). The results indicated that compared to the pure (7, 0) BNNTs, replacing B atom by Ni, Pd and Pt atoms can significantly increase the adsorption energy of CO gas on the BNNTs. The adsorption energies of CO gas on the pure (7, 0) Ni, Pd and Pt doped (7, 0) BNNTs are ?0.2013, ?1.746, ?1.593 and ?2.257 eV, respectively. Our results revealed that in comparison with the pure (7, 0) BNNTs, CO gas is chemisorbed on the transition metal doped (7, 0) BNNTs with the appreciable adsorption energy. In addition, it was found that by doping these atoms, band gap energy of the pure (7, 0) BNNTs is considerably decreased. These observations suggested that the Pt doped (7, 0) BNNTs can be introduced as a promising candidate in gas sensor devices for detecting CO gas.     

压力下CaN_2结构稳定性和电子结构的第一性原理研究

通过运用基于密度泛函理论的第一性原理计算方法结合广义梯度近似对压力下CaN_2的结构稳定性和电子结构进行了理论研究.对结构稳定性的研究表明,ZnCl_2型结构是CaN_2在环境压力下最稳定的结构,而实验上观察到的CaC_2-I型结构是CaN_2高压下(8.7 GPa)的稳定性结构.在50 GPa的压力范围内,CaN_2将发生从ZnCl_2型结构到ThC_2型结构再到CaC_2-I型结构的两次压致结构相变,其相变压力分别为0.81 GPa和8.77 GPa.而对电子结构的研究表明ZnCl_2型、ThC_2型和CaC_2-I型三种结构的CaN_2都表现出了金属特征,三种结构CaN_2当中Ca-N键的离子-共价性特征和N原子间的N=N双键特征得到了确认.     

Adsorption of HCN molecules on Ni,Pd and Pt-doped (7, 0) boron nitride nanotube: a DFT study

We studied affinity of pure and Ni, Pd and Pt-doped (7, 0) boron nitride nanotubes (BNNTs) to toxic HCN molecules using density functional theory calculations. The results indicated that the pure (7, 0) BNNTs can weakly adsorb HCN molecules with adsorption energy of ?0.2474 eV. Upon adsorption of HCN molecules on this nanotube, the band gap energy was decreased from 3.320 to 2.960 eV. The more negative adsorption energy between these transition metal-doped (7, 0) BNNTs and HCN molecules indicated that doping of (7, 0) BNNTs with Ni, Pd and Pt elements can significantly improve the affinity of BNNTs toward this gas. Additionally, it was found that the interaction energy between HCN molecules and Pt-doped BNNTs is more negative than those of the Ni and Pd-doped BNNTs. These observations suggested that the Pt-doped (7, 0) BNNTs are strongly sensitive to HCN molecules and therefore it may be used in gas sensor devices for detecting this toxic gas.     

Study on selective adsorption of deuterium on boron nitride using photon-stimulated ion-desorption

Adsorption behavior of atomic deuterium on a hexagonal boron nitride (h-BN) thin film is studied by photon-stimulated ion desorption (PSID) of D⁺ and near edge X-ray absorption fine structure (NEXAFS) at the B and N K-edges. After the adsorption of atomic deuterium, D⁺ desorption yield η(hν) shows clear enhancement at the B K-edge and almost no enhancement at the N K-edge. NEXAFS spectra show a large change in the B K-edge and a small change in the N K-edge after the adsorption. We propose selective adsorption of atomic deuterium on the h-BN thin film based on the experimental results, and mention the effectiveness of applying the PSID method with X-ray to study hydrogen storage materials.     

A theoretical investigation of the band alignment of type-I direct band gap dilute nitride phosphide alloy of GaN_xAs_yP_(1-x-y)/GaP quantum wells on GaP substrates

The GaP-based dilute nitride direct band gap material Ga（NAsP） is gaining importance due to the monolithic integra- tion of laser diodes on Si microprocessors. The major advantage of this newly proposed laser material system is the small lattice mismatch between GaP and Si. However, the large threshold current density of these promising laser diodes on Si substrates shows that the carrier leakage plays an important role in Ga（NAsP）/GaP QW lasers. Therefore, it is necessary to investigate the band alignment in this laser material system. In this paper, we present a theoretical investigation to optimize the band alignment of type-I direct band gap GaNxAsyP1-x-y/GaP QWs on GaP substrates. We examine the effect of nitrogen （N） concentration on the band offset ratios and band offset energies. We also provide a comparison of the band alignment of type-I direct band gap GaNxAsyP1-x-y/GaP QWs with that of the GaNxAsyP1-x-y/Al2Ga1-2P QWs on GaP substrates. Our theoretical calculations indicate that the incorporations of N into the well and AI into the barrier improve the band alignment compared to that of the GaAsP/GaP QW laser heterostructures.     

La、Al在Fe晶界上协同作用的第一性原理研究

采用基于密度泛函理论的第一性原理,研究了稀土La和Al在bcc-Fe中Fe晶界处的协同作用影响.计算了La和Al在晶界、表面、晶内的形成能,建立La、Al共存于晶界模型,通过电荷密度、布居分布手段分析了La、Al原子对晶界的影响.结果表明:La、Al原子易偏聚在晶界处,且La-Al的原子间距与体系结合能成正比关系. La的掺杂改善了晶界处的电荷分布情况,促进了Al原子与周围Fe原子间的相互作用,态密度曲线的计算结果显示,La原子的加入能够使La、Fe及Al原子间的键的结合力更强,从而提高了界面结合强度.     

Epitaxial growth of boron nitride on a Rh(1 1 1) multilayer system: Formation and fine tuning of a BN-nanomesh

The epitaxial growth of boron nitride on the surface of a Rh-YSZ-Si(1 1 1) multilayer system by CVD of borazine (HNBH)₃ was investigated by low energy electron diffraction (LEED). The formation of a (14 × 14) h-BN on (13 × 13) Rh-YSZ-Si(1 1 1) superstructure was observed, which is different in size from an already reported (13 × 13) h-BN on (12 × 12) Rh(1 1 1) superstructure grown on a Rh(1 1 1) single crystal substrate (“h-BN-nanomesh”). We found hints that differences between the thermal expansion behaviour of the multilayer substrates and the single crystal substrate can be the reason for the formation of different sized superstructures.     

Single boron atom anchored on graphitic carbon nitride nanosheet (B/g-C2N) as a photocatalyst for nitrogen fixation: A first-principles study

It is essential to explore high efficient catalysts for nitrogen reduction in ammonia production. Based on the first-principles calculation, we find that B/g-C₂N can serve as high performance photocatalyst in N₂ fixation, where single boron atom is anchored on the g-C₂N to form B/g-C₂N. With the introduction of B atom to g-C₂N, the energy gap reduces from 2.45 eV to 1.21 eV and shows strong absorption in the visible light region. In addition, N₂ can be efficiently reduced on B/g-C₂N through the enzymatic mechanism with low onset potential of 0.07 V and rate-determining barrier of 0.50 eV. The "acceptance-donation" interaction between B/g-C₂N and N₂ plays a key role to active N₂, and the BN₂ moiety of B/g-C₂N acts as active and transportation center. The activity originates from the strong interaction between 1π1π^* orbitals of N₂ and molecular orbitals of B/g-C₂N, the ionization of 1π orbital and the filling of 1π^* orbital can increase the N≡N bond length greatly, making the activation of N₂. Overall, this work demonstrates that B/g-C₂N is a promising photocatalyst for N₂ fixation.     

A density functional theory study on parameters fitting of ultra long armchair （n, n） single walled boron nitride nanotubes

Armchair(n,n) single walled boron nitride nanotubes with n = 2-17 are studied by the density functional theory at the B3LYP/3-21G(d) level combined with the periodic boundary conditions for simulating the ultra long model.The results show that the structure parameters and the formation energies bear a strong relationship to n.The fitted analytical equations are developed with correlation coefficients larger than 0.999.The energy gaps of(2,2) and(3,3) tubes are indirect gaps,and the larger tubes(n = 4-17) have direct energy gaps.Results show that the armchair boron nitride nanotubes(n = 2-17) are insulators with wide energy gaps of between 5.93 eV and 6.23 eV.     

Electronic structures and vibrational properties of coronene on Ru(0001): first-principles study

We calculate the configurations, electronic structures, vibrational properties at the coronene/Ru(0001) interface, and adsorption of a single Pt atom on coronene/Ru(0001) based on density functional theory calculations. The geometric structures and electronic structures of the coronene on Ru(0001) are compared with those of the graphene/Ru(0001). The results show that the coronene/Ru(0001) can be a simplified model system used to describe the interaction between graphene and ruthenium. Further calculations of the vibrational properties of coronene molecule adsorbed on Ru(0001) suggest that the phonon properties of differently corrugated regions of graphene on Ru(0001) are different. This model system is also used to investigate the selective adsorption of Pt atoms on graphene/Ru(0001). The configurations of Pt on coronene/Ru(0001) with the lowest binding energy give clues to explain the experimental observation that a Pt cluster selectively adsorbs on the second highest regions of graphene/Ru(0001). This work provides a simple model for understanding the adsorption properties and vibrational properties of graphene on Ru(0001) substrate.     

First principles study of oxygen adsorption on the anatase TiO2 (101) surface

The main objective of this study is to understand the sensing origin of anatase TiO₂ and provide an insight into why gas sensitivity of anatase TiO₂ is not so excellent.

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Electronic structures and magnetism of Fe nanowires on Cu（001） and Ag（O01）： A first-principles study

The electronic structures and magnetism of Fe nanowires along the [110] direction on Cu（001） and Ag（001） [Fe（nw）/Cu（001） and Fe（nw）/Ag（001）] are investigated by using the all-electron full-potential linearized augmented plane wave method in the generalized gradient approximation. It is found that the magnetic moment of Fe atom for the Fe（nw）/Cu（001） is 2.99#B, which is slightly smaller than that （3.02μB） for the Fe（nw）/Ag（001） but much larger than that （2.22μB） for the bcc iron. The great enhancement of magnetic moment in the Fe nanowires can be explained by the Fe d-band narrowing and enhancement of the spin-splitting due to a reduction in coordination number, From the calculated spin-polarized layer-projected density of states, it is found that the Fe 3d-states are strongly hybridized with the adjacent Cu 3d-states in the Fe（nw）/Cu（001）, and there exists a strong hybridization between the Fe sp-and the adjacent Ag 4d-states in the Fe（nw）/Ag（001）.     

(HgSe)_n(n=1～6)团簇结构和性质的密度泛函研究

本工作采用LANL2DZ赝势基组、B3LYP方法对(HgSe)n(n=1~6)团簇进行了结构优化、自然键原子轨道和频率计算,得到(HgSe)n(n=1~6)团簇基态的平衡几何结构、电子状态、垂直电离势、垂直电子亲和势、偶极矩、三个基本热力学函数等相关性质,并系统分析了该团簇的几何构型、原子净电荷布局、前沿分子轨道特征.结果表明:基态稳定结构(HgSe)2为平面四边形,(HgSe)n(n=3~6)为笼状结构,且稳定顺序为(HgSe)5(HgSe)4(HgSe)6(HgSe)2HgSe(HgSe)3,极性顺序为:(HgSe)4HgSe(HgSe)3(HgSe)5(HgSe)6(HgSe)2,(HgSe)6和(HgSe)2分子空间结构的对称性较好.(HgSe)n(n=1~6)团簇各体系都有较好的电子供体及受体等活性部位,随着n增大轨道离域现象明显,利于电子的转移,导电性增强.