LA声子对激子qubit纯退相干的影响

在一个抛物量子点中,以激子的真空态和基态作为量子比特(qubit),采用求密度矩阵元的方法,计算了由形变势下声学声子引发的激子量子比特纯退相干.找到了激子量子比特纯退相干因子对时间、温度和量子点受限长度的依赖关系.研究发现,激子量子比特的退相干因子在2.5ps的时间范围内随时间的增加而迅速增加,其纯退相干时间在ps量级;在温度即使为绝对温度0K时由LA声子引发的退相干依然存在,在温度大于3K后退相干因子随温度的增大而开始迅速增大;并同时发现量子点受限长度对退相干因子有重要影响,激子越受限退相干越快.研究结果表明,对激子量子比特使用适当大小量子点,且保持环境低温,并采用低能超快光学操作可以有效地抑制声子对激子量子比特纯退相干的影响. 关键词： 量子点 量子信息 量子比特     

Drastic reduction of plasmon damping in gold nanorods

The dephasing of particle plasmons is investigated using light-scattering spectroscopy on individual gold nanoparticles. We find a drastic reduction of the plasmon dephasing rate in nanorods as compared to small nanospheres due to a suppression of interband damping. The rods studied here also show very little radiation damping, due to their small volumes. These findings imply large local-field enhancement factors and relatively high light-scattering efficiencies, making metal nanorods extremely interesting for optical applications. Comparison with theory shows that pure dephasing and interface damping give negligible contributions to the total plasmon dephasing rate.     

Surface saturation control on the formation of wurtzite polytypes in zinc blende SiC nanofilms grown on Si-（100） substrates

We investigate the formations of wurtzite （WZ） SiC nano polytypes in zinc blende （ZB） SiC nanofilms hetero-grown on Si-（100） substrates via low pressure chemical vapor deposition （LPCVD） by adjusting the Si/C ratio of the introduced precursors. Through SEM, TEM, and Raman characterizations, we find that the nanofilms consist of discrete WZ SiC nano polytypes and ZB SiC polytypes composed of WZ polytypes （WZ ＋ ZB） and disordered ZB SiC polytypes, respectively, according to Si/C ratios of 0.5, 1.5, and 3. We attribute the WZ polytype formation to being due to a kinetic mechanism based on the Si/C surface saturation control.     

Dephasing effects in topological insulators

Topological insulators, a class of typical topological materials in both two dimensions and three dimensions,are insulating in bulk and metallic at surface. The spin-momentum locked surface states and peculiar transport properties exhibit promising potential applications on quantum devices, which generate extensive interest in the last decade. Dephasing is the process of the loss of phase coherence, which inevitably exists in a realistic sample. In this review, we focus on recent progress in dephasing effects on the topological insulators. In general, there are two types of dephasing processes: normal dephasing and spin dephasing. In two-dimensional topological insulators, the phenomenologically numerical investigation shows that the longitudinal resistance plateaus is robust against normal dephasing but fragile with spin dephasing. Several microscopic mechanisms of spin dephasing are then discussed. In three-dimensional topological insulators, the helical surface states exhibit a helical spin texture due to the spin-momentum locking mechanism. Thus, normal dephasing has close connection to spin dephasing in this case, and gives rise to anomalous “gap-like” feature. Dephasing effects on properties of helical surface states are investigated.     

Theoretical investigations for zinc blende-wurtzite polytypism in GaAs layers at Au/GaAs(1 1 1) interfaces

The zinc blende (ZB)-wurtzite (W) polytypism of GaAs layers at the Au/GaAs(1 1 1)B interfaces is investigated based on total-energy electronic-structure calculations within density functional theory. The calculations for the abrupt interfaces including a GaAs top layer with ZB and W stacking sequences reveal that the ZB sequence is energetically favorable, but the energy of W sequence with an interstitial Au atom at the top GaAs layer of the interface is lower than that of ZB sequence. This is because electrons accumulate around the interstitial region due to the hybridization between Au-6s and As-4p orbitals, resulting in the reduction of Ga-As bond charges. As a result, the relative stability at the top GaAs layer is determined by the electrostatic energy due to ionic charges. The results imply that the stabilization of W sequence at the Au catalyst-semiconductor interfaces as well as that on the nanowire faces are the origins for the appearance of W segments in NWs, qualitatively consistent with experiments.     

Suppression of dephasing due to a trapping potential and atom-atom interactions in a trapped-condensate interferometer

We propose and demonstrate a novel trapped-condensate interferometer using optical Bragg diffractions in a harmonic magnetic potential, which can realize a long coherence time with low dephasing. Dephasing of wave packets due to the magnetic potential is canceled by setting the interrogation time equal to the oscillation period of the harmonic potential. The harmonic potential also helps to suppress dephasing due to condensate atom-atom interactions. An interference signal with a fringe contrast of 30% is observed at an interrogation time of 58 ms. For a longer interrogation time about 100 ms, the spatial coherence of the condensate is still maintained with low dephasing, although the interference fringe is washed out by external vibrational noise.     

Relaxation and dephasing of multiexcitons in semiconductor quantum dots

We measure the dephasing time of ground-state excitonic transitions in InGaAs quantum dots under electrical injection in the temperature range from 10 to 70 K. Electrical injection into the barrier region results in a pure dephasing of the excitonic transitions. Once the injected carriers fill the electronic ground state, the biexciton to exciton transition is probed and a correlation of the exciton and biexciton phonon scattering mechanisms is found. Additional filling of the excited states creates multiexcitons that show a fast dephasing due to population relaxation.     

Zitterbewegung of electrons in quantum wells and dots in the presence of an in-plane magnetic field

We study the effect of an in-plane magnetic field on the zitterbewegung (ZB) of electrons in a semiconductor quantum well (QW) and in a quantum dot (QD) with the Rashba and Dresselhaus spin-orbit interactions (SOIs). We obtain a general expression of the time-evolution of the position vector and current of the electron in a semiconductor QW. The amplitude of the oscillatory motion is directly related to the Berry connection in momentum space. We find that in presence of the magnetic field the ZB in a QW does not vanish when the strengths of the Rashba and Dresselhaus SOIs are equal. The in-plane magnetic field helps to sustain the ZB in QWs even at a low value of k(0)d (where d is the width of the Gaussian wavepacket and k(0) is the initial wavevector). The trembling motion of an electron in a semiconductor QW with high Landé g-factor (e.g. InSb) is sustained over a long time, even at a low value of k(0)d. Further, we study the ZB of an electron in QDs within the two sub-band model numerically. The trembling motion persists in time even when the magnetic field is absent as well as when the strengths of the SOI are equal. The ZB in QDs is due to the superposition of oscillatory motions corresponding to all possible differences of the energy eigenvalues of the system. This is an another example of multi-frequency ZB phenomenon.     

Controlled dephasing of electrons via a phase sensitive detector

We demonstrate a controlled dephasing experiment via exploiting a unique entangled interferometer-detector system, realized in an electronic mesoscopic structure. We study the dephasing process both from the which path information available in the detector and, alternatively, from the direct effect of the detector on the interferometer. Detection is possible only due to an induced phase change in the detector. Even though this phase change cannot actually be measured, strong dephasing of the interferometer took place. The intricate role of detector's noise and coherency are investigated.     

The phase of Fano resonance in Aharonov–Bohm interferometer with a quantum dot embedded

We study the Fano effect of a closed Aharonov–Bohm mesoscopic interferometer, with a quantum dot embedded in one of the paths, in the presence of dephasing which is introduced by the Büttiker model. An exact analytic formula of conductance including dephasing factor is derived and can be written as an extended Fano form with a complex Fano parameter q. While the total conductance is unitary, the coherent part has broken unitarity due to dephasing, and thus has continuous phase shift. Our results agree with recent experimental measurements.     

Optical investigation of bloch oscillations in semiconductor superlattices

We investigate the dephasing dynamics in semiconductor superlattices using time-resolved four-wave mixing. The signals show a periodic modulation which can be related to Bloch oscillations in the superlattice miniband. The oscillation frequency is strongly dependent on the applied field, in agreement with theoretical expectation. At high fields, the dephasing times become very short due to field-induced scattering.     

First Principles Study of Half Metallic Properties of VSb Surface and VSb/GaSb (001) Interface

The structural, electronic, and magnetic properties of VSb in zincblende, andNiAs phases, VSb (001) film surfaces and its interfaces with GaSb (001) havebeen investigated within the framework of the density functional theoryusing the FPLAPW+lo approach. The NiAs structure is more stable than the ZB phase, ZB VSb is found to a half-metallic ferromagnetic. The V-terminated surfaces retain the half-metallic character, while the half-metallicity is destroyed for Sb-terminated surfaces due to surface states, which originate from p electrons. The phase diagram obtained through the ab-initio atomisticthermodynamics shows that the formation energy of ZB VSb is about 0.1 Ryd.The half-metallicity character is also preserved at VSb/GaSb (001) interface.The conduction band minimum (CBM) of VSb in the minority spin case liesabout 0.47 eV above that of GaSb, suggesting that the majority spin can beinjected into GaSb without being flipped to the conduction bands of the minority spin.     

Dephasing times in a nondegenerate two-dimensional electron Gas

Studies of weak localization by scattering from vapor atoms for electrons on a liquid helium surface are reported. There are three contributions to the dephasing time. Dephasing by the motion of vapor atoms perpendicular to the surface is studied by varying the holding field to change the characteristic width of the electron layer at the surface. A change in vapor density alters the quasielastic scattering length and the contribution to dephasing due to the motion of atoms both perpendicular and parallel to the surface. Dephasing due to the electron-electron interaction is dependent on the electron density.     

Universal dephasing rate due to diluted Kondo impurities

We calculate the dephasing rate due to magnetic impurities in a weakly disordered metal as measured in a weak-localization experiment. If the density nS of magnetic impurities is sufficiently low, the dephasing rate 1/tauphi is a universal function, 1/tauphi=(nS/nu)f(T/TK), where TK is the Kondo temperature and nu is the density of states. We show that inelastic vertex corrections with a typical energy transfer DeltaE are suppressed by powers of 1/(tauphiDeltaE) proportional to nS. Therefore, the dephasing rate can be calculated from the inelastic cross section proportional to pinu ImT-/pinuT/2, where T is the T matrix which is evaluated numerically exactly using the numerical renormalization group.     

Dephasing time of a positron accelerated by a laser pulse

The dephasing time of a positron in the total field associated with a laser pulse in a plasma J28is studied numerically. It is shown that the dynamics of the positron is quite different from that of an electron due to the electrostatic potential in the body of the pulse. The dephasing time of the positron increases with the pulse length and decreases with the pulse intensity nonlinearly. In the long pulse case (L》λ_p) the dephasing time is proportional to the pulse length. These results provide a scientific basis for experiments to observe the positron acceleration scheme, and may be important to the physics of laser-article interactions in multi-component plasmas.     

First-principles predictions on transition from tetrahedron to octahedron,electronic structures and elastic properties of InAs

In this work, the pressure induced phase transition of InAs is investigated by density functional theory. The first-order phase transition of InAs from zinc-blende (ZB) to the rocksalt (RS) structure occurs at 4.9 GPa accompanies by a 26% volume collapse. It is found that the nearest In and As atoms bonded as covalent bond, but there is no strong interaction between the nearest In–In or As–As atoms. Crystal space of ZB structure is occupied by tetrahedrons (4 In–As covalent bonds) partly with many interstice, and crystal space of RS is fulfilled by close-packed octahedrons (6 In–As covalent bonds). With increasing pressure, rebuild of covalent bond due to variations of electronic structure causes phase transition from ZB to RS structure. Furthermore, directional changes of covalent bond along [100] and [110] bring evident variation of shear on the {100} and {110} planes.     

Influence of acoustic phonons on dephasing of free excitons in quantum wells

A theory of the dephasing rate of quasi-2D free excitons due to acoustic phonon interaction at low exciton densities is presented. Both deformation potential and piezoelectric couplings are considered for the exciton–phonon interaction in quantum wells. Using the derived interaction Hamiltonian obtained recently by us, exciton linewidth and dephasing rate are calculated as a function of the exciton density, exciton temperature, exciton momentum and lattice temperature.     

Electron—phonon interactions in semiconductor nanocrystals

The electron—phonon interactions in semiconductor nanocrystals, especially concerning the acoustic phonon modes are derived and the size dependence of the coupling strength is clarified for typical coupling mechanisms. On the basis of these results, the commonly observed linearly temperature-dependent term of the excitonic dephasing rate and the proportionality of its magnitude to the inverse square of the nanocrystal size are attributed to the pure dephasing due to the deformation-potential coupling. The luminescence Stokes shift and the Huang-Rhys factor due to acoustic phonon modes in Si nanocrystals are discussed in conjunction with the origin of the recently observed luminescence onset energy.     

GaAs体材料及其量子阱的光学极化退相特性

采用飞秒时间分辨瞬态简并四波混频技术，在室温下测量了GaAs体材料及其量子阱材料GaAs/Al_0.3Ga_0.7As的光学极化超快退相时间，当激光中心波长为785nm，受激载流子浓度为10¹¹cm^-2时，它们的退相时间分别为28fs和46fs.量子阱材料的退相时间比体材料的长，这是由于量子阱中的载流子在垂直于GaAs/AlGaAs界面的运动受到限制，运动呈现二维特性，大大减小了载流子的散射概率.实验中观察到瞬态简并四波混 关键词： 时间分辨简并四波混频 飞秒激光脉冲 退相 密度矩阵     

The stability and electronic properties of wurtzite and zinc-blende ZnS nanowires

The stability and electronic properties of the pristine wurtzite (WZ) and zinc-blende (ZB) structural ZnS nanowires are investigated and compared by using first-principles approaches. It shows that the WZ-ZnS nanowire is more stable energetically than the ZB-ZnS nanowire. The two kinds of ZnS nanowires have different electronic properties due to both the quantum confinement effect and the surface effect. The band gaps of pristine WZ nanowires become larger than that of the corresponding bulk ZnS, while those of ZB nanowires are smaller. The electronic properties of the hydrogen-passivated WZ-ZnS and ZB-ZnS nanowires are further calculated. The underlying physical reason for their energetic and electronic structures is elucidated.