不同量子阱宽度的InP基In0.53GaAs/In0.52AlAs高电子迁移率晶体管材料二维电子气的性能研究

用Shubnikov-de Haas(SdH)振荡效应，研究了在1.4 K下不同量子阱宽度(10—35 nm)的InP基高电子迁移率晶体管材料的二维电子气特性.通过对纵向电阻SdH振荡的快速傅里叶变换分析，得到不同阱宽时量子阱中二维电子气各子带电子浓度和量子迁移率.研究发现，在Si掺杂浓度一定时，阱宽的改变对于量子阱中总的载流子浓度改变不大，但是随着阱宽的增加，阱中的电子从占据一个子带到占据两个子带，且第二子带上的载流子迁移率远大于第一子带迁移率.当量子阱宽度为20 nm时，处在第二子能级上的电子数与处在 关键词： 量子阱宽 二维电子气 Shubnikov-de Haas振荡 高电子迁移率晶体管     

Investigation of AlInN HEMT structures with different AlGaN buffer layers grown on sapphire substrates by MOCVD

We investigate the structural and electrical properties of Al_xIn_1–xN/AlN/GaN heterostructures with AlGaN buffers grown by MOCVD, which can be used as an alternative to AlInN HEMT structures with GaN buffer. The effects of the GaN channel thickness and the addition of a content graded AlGaN layer to the structural and electrical characteristics were studied through variable temperature Hall effect measurements, high resolution XRD, and AFM measurements. Enhancement in electron mobility was observed in two of the suggested Al_xIn_1?xN/AlN/GaN/Al_0.04Ga_0.96N heterostructures when compared to the standard Al_xIn_1–xN/AlN/GaN heterostructure. This improvement was attributed to better electron confinement in the channel due to electric field arising from piezoelectric polarization charge at the Al_0.04Ga_0.96N/GaN heterointerface and by the conduction band discontinuity formed at the same interface. If the growth conditions and design parameters of the Al_xIn_1?xN HEMT structures with AlGaN buffers can be modified further, the electron spillover from the GaN channel can be significantly limited and even higher electron mobilities, which result in lower two-dimensional sheet resistances, would be possible.     

A quantitative study on the effect of nitrogen concentration on two-dimensional electron gas (2DEG) mobility in a dilute nitride GaAsN/AlGaAs heterostructure

Detailed theoretical analysis of the temperature dependence of two-dimensional electron gas mobility data in GaAs_1−xN_x/Al_0.38Ga_0.62As samples (x=0, 0.1% and 0.4%) shows that, as x increases, the dislocation density and the number of ionized impurities in the potential well increase by a factor of ∼ ×300 and ∼ ×500, respectively.     

C-V characterization of Schottky- and MIS-gate SiGe/Si HEMT structures

Electrical properties of Schottky- and metal-insulator-semiconductor (MIS)-gate SiGe/Si high electron mobility transistors (HEMTs) were investigated with capacitance-voltage (C-V) measurements. The MIS-gate HEMT structure was fabricated using a SiN gate insulator formed by catalytic chemical vapor deposition (Cat-CVD). The Cat-CVD SiN thin film (5 nm) was found to be an effective gate insulator with good gate controllability and dielectric properties. We previously investigated device characteristics of sub-100-nm-gate-length Schottky- and MIS-gate HEMTs, and reported that the MIS-gate device had larger maximum drain current density and transconductance (g_m) than the Schottky-gate device. The radio frequency (RF) measurement of the MIS-gate device, however, showed a relatively lower current gain cutoff frequency f_T compared with that of the Schottky-gate device. In this study, C-V characterization of the MIS-gate HEMT structure demonstrated that two electron transport channels existed, one at the SiGe/Si buried channel and the other at the SiN/Si surface channel.     

Electron mobility for a model Al<Subscript>x</Subscript> Ga<Subscript>1-x</Subscript> As/GaAs heterojunction under pressure

A variational method and a memory function approach are adopted to investigate the electron mobility parallel to the interface for a model Al_xGa_1-xAs/GaAs heterojunction and its pressure effect by considering optical phonon modes (including both of the bulk longitudinal optical (LO) in the channel side and interface optical (IO) phonons). The influence of a realistic interface heterojunction potential with a finite barrier and conduction band bending are taken into account. The properties of electron mobility versus Al concentration, electronic density and pressure are given and discussed, respectively. The results show that the electron mobility increases with Al concentration and electronic density, whereas decreases with pressure from 0 to 40 kbar obviously. The Al concentration dependent and the electron density dependent contributions to the electron mobility from the scattering of IO phonons under pressure becomes more obvious. The variation of electron mobility with the Al concentration and electron density are dominated by the properties of IO and LO phonons, respectively. The effect of IO phonon modes can not be neglected especially for higher pressure and electronic density.     

Aδ-doped In0.24Ga0.76As/GaAs pseudomorphic high electron mobility transistor using a graded superlattice spacer

A new δ -doped In_0.24Ga_0.76As/GaAs pseudomorphic high electron mobility transistor (HEMT) using a graded superlattice spacer grown by molecular beam epitaxy (MBE) has been successfully fabricated and investigated. The present device structure demonstrated a more than 40% enhancement of electron mobility and 20% higher product value of electron mobility and two-dimensional electron gas (2DEG) concentration than those of the conventional HEMT with single undoped spacer under the same growth specifications. Superior device characteristics were achieved by employing the thickness-graded superlattice spacer to accommodate the lattice-mismatch-induced strain and to improve the interfacial quality. For a gate length of 1 μ m, the maximum drain-to-source saturation current density and extrinsic transconductance of the present HEMT design are 165 mA mm ^− 1and 107 mS mm ^− 1, respectively, at room temperature.     

Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure

Unintentionally doped high-Al-content Al_0.45Ga_0.55N/GaN high electron mobility transistor (HEMT) structures with and without AlN interfacial layer were grown by metal-organic chemical vapor deposition (MOCVD) on two-inch sapphire substrates. The effects of AlN interfacial layer on the electrical properties were investigated. At 300 K, high two-dimensional electron gas (2DEG) density of 1.66 × 10¹³ cm⁻² and high electron mobility of 1346 cm² V⁻¹ s⁻¹ were obtained for the high Al content HEMT structure with a 1 nm AlN interfacial layer, consistent with the low average sheet resistance of 287 Ω/sq. The comparison of HEMT wafers with and without AlN interfacial layer shows that high Al content AlGaN/AlN/GaN heterostructures are potential in improving the electrical properties of HEMT structures and the device performances.     

The mobility of electrons in strained silicon

The development of Si and Si_1−xGe_x layer growth by molecular beam epitaxy has enabled heterostructures and HEMT devices to be made with Group IV semiconductors. Strain is very important in determining the electronic behaviour of this system and as an initial step towards understanding mobility in SiGe HEMT structures a Monte Carlo technique has been used to simulate electron transport in bulk Si, strained by commensurate growth on a (001) Si_1−yGe_y buffer. The in-plane mobility initially increases with increasing strain but then falls at higher strains and fields. Results are presented for both undoped and 10¹⁷ cm⁻³ n-type Si, fields of 10² to 10⁴ Vcm⁻¹ and strain levels up to the equivalence of growth on a Si_0.25Ge_0.75 buffer. The results are explained by the splitting of the degenerate conduction band minimum and the transition probability between the two-fold and four-fold split minima.     

Drag exerted on dislocation kinks in solid solutions

The theory of drag exerted on dislocation kinks by statistical density fluctuations of impurity atoms is generalized to the case of solid solutions. The conditions of the transition to anomalous kink drift, which is characterized by a nonlinear time (t) dependence of the displacement x (x ～ t ^δ, δ < 1), are obtained. The related consequences for the dislocation mobility and the plastic flow of a solid solution are derived. The theory is illustrated through calculating the concentration dependence of the deforming stress in a Ge_1?c Si _c solid solution.     

Significant performance enhancement in AlGaN/GaN high electron mobility transistor by high-κ organic dielectric

The electrical properties of AlGaN/GaN high electron mobility transistor (HEMT) with and without high-κ organic dielectrics are investigated. The maximum drain current I_{D max} and the maximum transconductance g_{m max} of the organic dielectric/AlGaN/GaN structure can be enhanced by 74.5%, and 73.7% compared with those of the bare AlGaN/GaN HEMT, respectively. Both the threshold voltage V_T and g_{m max} of the dielectric/AlGaN/GaN HEMT are strongly dielectric-constant-dependent. Our results suggest that it is promising to significantly improve the performance of the AlGaN/GaN HEMT by introducing the high-κ organic dielectric.     

Geometric and electronic structure of epitaxial NbxTi1−xO2 on TiO2(110)

We have investigated the detailed geometric and electronic structure of MBE-grown Nb_xTi_1−xO₂ on TiO₂(110) by means of high-resolution transmission electron microscopy, X-ray photoelectron diffraction, ultraviolet and X-ray photoemission and electron energy loss spectroscopy. We find no measurable change in the NbO bond length relative to that for TiO bonds in TiO₂ in the dilute limit (x = 0.05), and that the epitaxial layers remain strained and coherent with the substrate for x ⩽ ≈ 0.3. However, significant dislocation generation occurs for x > ≈ 0.3. Nb substitution for Ti in the lattice introduces an additional valence electron per atom. The resulting density of states falls in the valence band region, but no new state density occurs in the either the band gap or conduction band. This result is in contrast to what occurs in the very dilute limit (parts per thousand), where Nb electrons occupy a shallow donor level near the conduction band minimum. Based on the electron counting rule, the extra Nb electrons form a non-bonding band which is degenerate with the valence band. The significance of these results for enhanced thermal and photochemistry on Nb_xTi_1−xO₂ surfaces vis a vis TiO₂ is discussed.     

Theoretical study of electron mobility for silicon-carbon alloys

Electron mobilities in strained Si_1−xC_x layers grown on a Si substrate and relaxed alloys are calculated as functions of carbon content, alloy scattering potential, and doping concentration at room temperature. The electron mobility model is backed by experimental data. In the case of doped strained Si_1−xC_x, the results of our electron mobility model indicates that for systems with a doping concentration greater than 10¹⁸ cm⁻³, there is no substantial decrease in the in-plane mobility with an increase in the carbon mole fraction. However, for low doping concentrations, the mobility decreases with a decrease in the carbon mole fraction.     

High-quality two-dimensional electron gas at large scale GaN/AlGaN wafer interface prepared by mass production MOCVD systems

Basic electronic properties of two-dimensional electron gas (2DEG) formed at GaN/AlGaN hetero-interface in large-scale (100 mm) wafer made by metal organic chemical vapour deposition (MOCVD) have been reported and discussed. From conventional Hall measurements, highest electron mobility was found to be μ_e∼1680 and 9000 cm²/V s at room temperature and at ∼5 K, respectively, for sheet electron density of n_s∼8×10¹² cm⁻². In magneto-resistance (MR) measurements carried out at 1.5 K in Hall bar sample defined by photolithography and ion implantation, very clear Schubnikov de-Haas oscillations and integer quantum Hall effect were observed in diagonal (R_xx) and off-diagonal (R_xy) resistances, respectively. In addition, a good insulating nature of GaN layer is confirmed by capacitance-voltage (C-V) measurement. These results suggest the high-qualitiness of our 100 mm GaN/AlGaN high electron mobility transistor (HEMT) wafers comparable to those so far reported.     

Non-equivalent minima scattering in n-type Ga1−xAlxAs alloys from Monte Carlo methods

Using the known conduction band structure for Ga_1?xAl_xAs alloys, the electron drift mobilities in the Γ, L and X minima have been calculated as a function of pressure using Monte Carlo methods. These mobilities are found to decrease first, show a minimum at a pressure near the Γ-L minima crossover and then increase again with pressure due to strong non-equivalent intervalley scattering. The calculated Hall mobility also shows similar behaviour and the results are in qualitative agreement with the experimental observations reported earlier.     

A quantitative understanding of pressure dependent conductivity of FeSi1−xGex

A new density of states model, referred to as the Gaussian density of states, is proposed for the quantitative understanding of the electrical conductivity behaviour of FeSi Kondo insulating system. The effects of electron correlation and disorder, responsible for the physical properties of this system, are judiciously incorporated in this model. Within the framework of this model, a detailed quantitative analysis of the temperature and pressure dependent electrical conductivity data of FeSi_1−xGe_x (x=0.0, 0.05 and 0.20) reported by Awadhesh Mani et al. [Phys. Rev. B 63 (2001) 115103] has been carried out. From these analyses the complicated pressure dependence of energy gap seen experimentally in these samples could be satisfactorily rationalized.     

Influence of aluminum impurity on the electronic structure and optical properties of the TbNi5 intermetallic compound

The electronic structure of the TbNi_{5 ? x} Al _x intermetallic compounds (x = 0, 1, 2) is calculated in the local electron density approximation with the correction to strong electron correlations in 4f shell of terbium ions. Spectral properties of these compounds are measured by ellipsometry in a wavelength range of 0.22–16 μm. Frequency dependences of optical conductivity in the region of interband optical absorption are interpreted based on the results of calculations of electron densities of states. The relaxation and plasma frequencies of conduction electrons are determined.     

AlxGa1-x N/GaN调制掺杂异质结构的子带性质研究

通过低温和强磁场下的磁输运测量研究了Al_0.22Ga_0.78N/GaN调制掺杂异质结构中2DEG的子带占据性质和子带输运性质.在该异质结构的磁阻振荡中观察到了双子带占据现象，并发现2DEG的总浓度随第二子带浓度的变化呈线性关系.得到了该异质结构中第二子带被2DEG占据的阈值电子浓度为7.3×10¹²cm^-2.采用迁移率谱技术得到了不同样品的分别对应于第一和第二子带的输运迁移率.发现当样品产生应变弛豫时第一子带的电子迁移 关键词： AlGaN/GaN异质结 二维电子气 子带占据 输运迁移率     

Alloy disorder scattering limited mobility of two-dimensional electron gas in the quaternary AlInGaN/GaN heterojunctions

Nitride heterojunction field effect transistors (HFETs) with quaternary AlInGaN barrier layers have achieved remarkable successes in recent years based on highly improved mobility of the two-dimensional electron gases (2DEGs) and greatly changed AlInGaN compositions. To investigate the influence of the AlInGaN composition on the 2DEG mobility, the quaternary alloy disorder (ADO) scattering to 2DEGs in AlInGaN/GaN heterojunctions is modeled using virtual crystal approximation. The calculated mobility as a function of AlInGaN alloy composition is shown to be a triangular-scarf-like curved surface for both cases of fixed thickness of AlInGaN layer and fixed 2DEG density. Though the two mobility surfaces are quite different in shape, both of them manifest the smooth transition of the strength of ADO scattering from quaternary AlInGaN to ternary AlGaN or AlInN. Some useful principles to estimate the mobility change with the Al(In,Ga)N composition in Al(In,Ga)N/GaN heterojunctions with a fixed 2DEG density are given. The comparison between some highest Hall mobility data reported for Al_xGa_1−xN/GaN heterojunctions (x=0.06~0.2) at very low temperature (0.3~13 K) and the calculated 2DEG mobility considering ADO scattering and interface roughness scattering verifies the influence of ADO scattering. Moreover, the room temperature Hall mobility data of Al(In,Ga)N/AlN/GaN heterojunctions with ADO scattering eliminated are summarized from literatures. The data show continuous dependence on Hall electron density but independence of the Al(In,Ga)N composition, which also supports our theoretical results. The feasibility of quaternary AlInGaN barrier layer in high conductivity nitride HFET structures is demonstrated.     

Magnetoelectric Cr<Subscript>2</Subscript>O<Subscript>3</Subscript> and relativity theory

Based on the dielectric continuum phonon model, uniaxialmodel and force balance equation the mobility of two dimensional electrongas in wurtzite Al_xGa_1-xN/GaN/Al_xGa_1-xN quantum wells isdiscussed theoretically within the temperature range dominated by opticalphonons. The dependences of the electron mobility on temperature, Al molarfraction and electron sheet density are presented including hydrostaticpressure effect. The built-in electric field is also taken into account. Itis found that under normal pressure the main contribution to the mobility isfrom the scattering of interface optical phonons in narrow (for well widthd < 12 Å) and wide (for d > 117 Å and d > 65 Å for finitelythick barriers and infinitely thick ones, respectively) wells, whereas thatis from the scattering of confined optical phonons in a well with anintermediate width. It is shown that the electron mobility decreases withincreasing Al molar fraction and temperature, whereas increases obviouslywith increasing electron sheet density. The theoretical calculated electronmobility is 978 cm²/V?s which is higher than an available experimentaldata 875 cm²/V?s when x equals to 0.58 at room temperature. Theresults under hydrostatic pressure considering the modification of strainindicate that the mobility increases slightly as hydrostatic pressureincreases from 0 to 10 GPa.     

Electron channel with high carrier mobility at the interface of type-II broken-gapp-GaInAsSb/p-InAs single heterojunctions

We have studied experimentally the magneto-transport properties of type-II broken-gap Ga_1 − xIn_xAsSb/p-InAs heterostructures with various doping levels of the quaternary layer by Te or Zn. A strong electron channel with high electron mobility was observed at the interface of the heterostructures. Interface roughness scattering was found to dominate the electron mobility atT = 4.2–47 K in samples with an undoped or a slightly doped quaternary layer. A drastic mobility drop with increasing Zn doping level was observed. Shubnikov–de Haas oscillations at low temperatures (1.5–20 K) were studied and a weak anisotropy of magnetoresistance was found. Some important parameters of the heterostructures under study were determined.