Magnetism of single-walled silicon carbide nanotubes doped by boron,nitrogen and oxygen

We calculated, using spin polarized density functional theory, the electronic properties of zigzag (10,0) and armchair (6,6) semiconductor silicon carbide nanotubes (SiCNTs) doped once at the time with boron, nitrogen, and oxygen. We have looked at the two possible scenarios where the guest atom X (B, N, O), replaces the silicon X_Si, or the carbon atom X_C, in the unit cell. We found that in the case of one atom B @ SiCNT replacing a carbon atom position annotated by B_C exhibits a magnetic moment of 1 μ_B/cell in both zigzag and armchair nanotubes. Also, B replacing Si, (B_Si), induce a magnetic moment of 0.46 μ_B/cell in the zigzag (10,0) but no magnetic moment in armchair (6,6). For N substitution; (N_C) and (N_Si) each case induce a magnetic moment of 1 μ_B/cell in armchair (6,6), while N_Si give rise to 0.75 μ_B/cell in zigzag (10,0) and no magnetic moment for N_C. In contrast the case of O_C and O_Si did not produce any net magnetic moment in both zigzag and armchair geometries.     

A DFT studies of structural and quadrupole coupling constants properties in C-doped BeO nanotubes

In the framework of density functional theory (DFT), we calculated the electronic structures and the quadrupole coupling constants (CQ) in the pristine and carbon doped (C-doped) beryllium oxide nanotubes (BeONTs) for the first time. The pristine and C-doped forms of representative (10, 0) zigzag and (5, 5) armchair models of BeONTs were considered in this study. The structures are allowed to relax by performing all atomic optimization. Formation energies indicate that C-doping of Be atom (CBe form) could be more favorable than C-doping of O atom (CO form) in both zigzag and armchair BeONTs. Gap energies and dipole moments detected the effects of dopant in the (5, 5) armchair models; however, those parameters did not detect any significant changes in the C-doped (10, 0) zigzag BeONT models. The calculated nuclear quadrupole coupling constant for the Be and O nuclei reveal that the pristine models can be divided into layers of nuclei with an equivalent electrostatic environment such that those nuclei at the ends of tubes end up in a strong electrostatic environment when compared to the other nuclei along the length of tubes. Comparison with the available data on the pristine BeONTs reveals the influence of C-doping on the CQ parameters of Be and O atoms in the C-doped structures. For most lattice sites, the degree of influence on the CQ parameters of the zigzag model is larger than that of the armchair model. The calculations were performed based on the B3LYP DFT method and 6-31G^∗ standard basis sets using the Gaussian 09 program package.     

Matlab编程的Hückel分子轨道法计算研究掺杂纳米碳管的化学反应性

使用Matlab自编简单Hückel分子轨道法（SHMO）计算程序,分析空位、Stone-Wales缺陷位、N和B原子掺杂的CNT（5,5）碳纳米管,计算π电子密度和前线分子轨道（HOMO和LUMO）为研究掺杂相对碳纳米管的化学反应性提供依据.具有不同电特性的掺杂相打破了碳纳米管的π电子、HOMO和LUMO的均衡分布.掺杂相和/或邻近的碳原子为HOMO或LUMO贡献了较其它原子更大的轨道系数,在不同的化学反应中表现出良好的亲核性或亲电性.此外,HOMO-LUMO能量差很好地反映了掺杂纳米碳管的导电性.计算结果与已报道的实验和理论结果吻合良好.     

Structural and electronic properties of heterofullerene C59P

Single P-doped heterofullerene C₅₉P is investigated via semiempirical and density functional theory calculations. Static geometric optimization shows that structural deformation occurs in the vicinity of the dopant atom and gives rise to P-C bonds significantly larger than the ordinary C-C bonds of the fullerene cage. The HOMO and LUMO lie in the middle of the energy gap of the undoped system. Unlike the HOMOS and LUMOs of C₅₉Si and C₅₉N, which are strongly localized on the dopant site, the C₅₉P HOMO and LUMO are weakly localized on the environment of the dopant site. To a first good approximation the dopant P can be considered in the 1 + charge state.     

Carbon nanoribbons and nanotubes based on δ-graphyne: A first-principles study

As a stable allotropy of two-dimensional (2D) carbon materials, δ-graphyne has been predicted to be superior to graphene in many aspects. Using first-principles calculations, we investigated the electronic properties of carbon nanoribbons (CNRs) and nanotubes (CNTs) formed by δ-graphyne. It is found that the electronic band structures of CNRs depend on the edge structure and the ribbon width. The CNRs with zigzag edges (Z-CNRs) have spin-polarized edge states with ferromagnetic (FM) ordering along each edge and anti-ferromagnetic (AFM) ordering between two edges. The CNRs with armchair edges (A-CNRs), however, are semiconductors with the band gap oscillating with the ribbon width. For the CNTs built by rolling up δ-graphyne with different chirality, the electronic properties are closely related to the chirality of the CNTs. Armchair (n, n) CNTs are metallic while zigzag (n, 0) CNTs are semiconducting or metallic. These interesting properties are quite crucial for applications in δ-graphyne-based nanoscale devices.     

A computational study of silicon-doped aluminum phosphide nanotubes

We performed density functional theory (DFT) calculations to investigate the properties of silicon-doped (Si-doped) models of representative (4,4) armchair and (6,0) zigzag aluminum phosphide nanotubes (AlPNTs). The structures were allowed to relax and the chemical shielding (CS) parameters were calculated for the atoms of optimized structures. The results indicated that the band gap energies and dipole moments detect the effects of dopant. The CS parameters also indicated that the Al and P atoms close to the Si-doped region are such reactive atoms, which make the Si-doped AlPNTs more reactive than the pristine AlPNTs. Moreover, replacement of P atom by the Si atom makes AlPNT more reactive than the replacement of Al atom by the Si atom.     

Structure and electronic properties of native and defected gallium nitride nanotubes

Structure and electronic properties of GaN nanotubes (GaNNTs) are investigated by using ab initio density functional theory. By full optimization, the optimized structures (bond-lengths and angles between them) of zigzag GaNNTs (n,0) and armchair GaNNTs (n,n) (4<n<11) are calculated. The difference between nitrogen ring diameter and gallium ring diameter (buckling distance) and semiconducting energy gap in term of diameter for zigzag and armchair GaNNTs have also been calculated. We found that buckling distance decreases by increasing nanotube diameter. Furthermore, we have investigated the effects of nitrogen and gallium vacancies on structure and electronic properties of zigzag GaNNT (5,0) using spin dependent density functional theory. By calculating the formation energy, we found that N vacancy in GaNNT (5,0) is more favorable than Ga vacancy. The nitrogen vacancy in zigzag GaNNT induces a 1.0μB magnetization and makes a polarized structure. We have shown that in polarized GaNNT a flat band near the Fermi energy splits to occupied spin up and unoccupied spin down levels.     

Band gap of carbon nanotubes under combined uniaxial–torsional strain

Within tight-binding model, the band gaps of armchair and zigzag carbon nanotubes (CNTs) under both uniaxial tensile and torsional strains have been studied. It is found that the changes in band gaps of CNTs depend strongly on the strain type. The torsional strain can induce a band gap for armchair CNTs, but it has little effect on band gap of the zigzag CNTs. While the tensile strain has great effect on band gap of zigzag CNTs, but it has no effect on that of the armchair CNTs. More importantly, when both the tensile and torsional strains are simultaneously applied to the CNTs, the band gap changes of armchair CNTs are not equal to a simple sum over those induced separately by uniaxial tensile and torsional strains. There exists a cooperative effect between two kinds of strains on band gap changes of armchair CNTs. But for zigzag CNTs, the cooperative effect was not found. Analytical expressions for the band gaps of armchair and zigzag CNTs under combined uniaxial–torsional strains have been derived, which agree well with the numerical results.     

Existence and stability of co-axial and meshed double-walled armchair silicon nanotubes

A systematic study of armchair double-walled Si nanotubes (DWNT) (n, n)@(m, m) (3≤n≤6; 7≤m≤12) using the finite cluster approximation is presented. The geometries of the tubes have been spin optimized with an all electron 3–21 G^⁎ basis set and the B3LYP functional. Analysis of the electronic structure properties of these tubes has also been performed with a larger basis set. The study indicates that the stabilities of the Si nanotubes are of the same order as those of single-walled Si nanotubes. It should be possible to experimentally synthesis both single-walled and double-walled Si nanotubes. The binding energy per atom or the cohesive energy of the nanotubes depends not only on the number of atoms but also on the coupling of the constituent single-walled nanotubes. Nanotubes with small interlayer separations, called meshed tubes, do not hold the coaxial cylindrical structure after optimization. The SiNTs (n, n)@(n+3, n+3) are found to have large formation energies and binding energies per atom. For example, (3, 3)@(6, 6), (4, 4)@(7, 7), (5, 5)@(8, 8), and (6, 6)@(9, 9) all have large binding energies per atom, around 3.7 eV/atom. All Si nanotubes are found to be semiconductors. However, the band gap, in general, is observed to decrease from single walled nanotubes to double walled nanotubes.     

Geometry and electronic properties of single vacancies in achiral carbon nanotubes

An ideal single vacancy can be formed by removing one carbon atom from a hexagonal network. The vacancy is one of the most important defect structures in carbon nanotubes (CNTs). Vacancies can affect the mechanical, chemical, and electronic properties of CNTs. We have systematically investigated single vacancies and their related point defects for achiral, single-walled carbon nanotubes (SWNTs) using first-principles calculations. The structures around single vacancies undergo reconstruction without constraint, forming ground-stateor metastable-state structures. The 5-1DB and 3DB point defects can be formed in armchair CNTS, while the 5-1DB-P and 5-1DB-T point defects can be formed in zigzag CNTs. The related point defects can transform into each other under certain conditions. The formation energies of armchair CNTs change smoothly with the tube radius, while in the case of the 3DB defect, as the radius get larger, the formation energies tend towards a constant value.     

碳纳米管中的群论及一系列新点群

在讨论了碳纳米管的几何结构的基础上，对齿型和椅型碳纳米管的对称性进行了分析并将这些对称元进行了抽象和总结.对齿型和椅型碳纳米管的对称元所属的群Dnh点群进行了讨论. 关键词： 点群 碳纳米管 几何结构 对称性     

Electric field-induced unzipping of hydrogenated carbon nanotubes into graphene nanoribbons

We have investigated the electric field effect on horseshoe-shape carbon nanotubes (CNTs) resulting from hydrogen adsorption on the single-wall armchair (n,n)CNTs with 6 ≤ n ≤ 16 by using the density functional theory calculations. The horseshoe-shape CNT is completely unzipped into a graphene nanoribbon upon applying a critical electric field, which decreases with increasing CNT diameter, thus enabling one to select a nanoribbon width. A simple model based on the tensile force exerted on the tube walls by the applied electric field was introduced to understand the CNT-diameter dependence of the critical field.     

Electronic structure and molecular orbital study of hole-transport material triphenylamine derivatives

Recently, triphenylamine (TPA), 4,4′-bis(phenyl-m-tolylamino)biphenyl (TPD), 4,4′-bis(1-naphthylphenylamino)biphenyl (NPB) and their derivatives are widely used in the organic light-emitting diode (OLED) devices as a hole-transporting material (HTM) layer. We have optimized twenty different structures of HTM materials by using density functional theory (DFT), B3LYP/6-31G method. All these different structures contain mono-amine and diamine TPA derivatives. The energies of highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) along with molecular orbitals for these HTMs are also determined. We have found that the central amine nitrogen atom and the phenyl ring, which is next to the central amine nitrogen atom, show significant contribution to the HOMO and LUMO, respectively. The sum of the calculated bond angles (α+β+γ) of the central amine nitrogen atom has been applied to describe the bonding and the energy difference for HOMO and LUMO in these TPA derivatives. Electronic structure calculations have been performed for these TPA derivatives. Again, the LCAO-MO patterns of HOMO and LUMO levels of these derivatives are used to investigate their electron density. A series of electron-transporting steps are predicted for these compounds employing these calculated results.     

Curvature effect on the electronic properties of BN nanoribbons

Density functional theory calculations have been used to investigate the rolling process of armchair boron nitride nanoribbons (n-ABNNRs, n?=?6,?8,?10,?12,?14,?16) to form (n,?0) zigzag boron nitrogen nanotubes (ZBNNTs, n?=?3–8). Results showed that by rolling (increasing the curvature) energy gap decreases and the difference between the initial and final states increases dramatically with decreasing the ribbon width. It was found that ZBNNTs have direct band gaps and the gap increases by diameter, while ABNNRs have direct band gaps which oscillate with the ribbon width.     

On the buckling behavior of connected carbon nanotubes with parallel longitudinal axes

The application of hetero-junction carbon nanotubes (CNTs) is increasing continuously due to their outstanding properties in nano-mechanical systems. Several investigations have been conducted to study the behavior of CNTs. In this paper, straight hetero-junctions and their constituent CNTs (armchair and zigzag) were simulated by a commercial finite element package. Then, the buckling behavior of CNTs was evaluated by comparing the critical buckling load of each straight hetero-junction and its constituent CNTs. Both obtained, i.e. analytical calculations and computational, results were compared. The investigations showed that, first, the behavior of homogeneous CNTs under cantilevered boundary conditions follows the assumption of the classical Euler equation. Second, the analytical solutions are in good agreement with the finite element simulation results. In addition, it was shown that the first critical buckling load of hetero-junctions lies within the value of the fundamental homogeneous CNT range. It was also concluded that the buckling load of straight hetero-junctions and their fundamental CNTs increases by increasing the chiral number of both armchair and zigzag CNTs. The current study provides a better insight towards the prediction of straight hetero-junction CNTs behavior.     

Effects of doping, Stone Wales and vacancy defects on thermal conductivity of single-wall carbon nanotubes

The thermal conductivity of carbon nanotubes with certain defects (doping, Stone-Wales, and vacancy) is investigated by using the non-equilibrium molecular dynamics method. The defective carbon nanotubes (CNTs) are compared with perfect tubes. The influences of type and concentration of the defect, length, diameter, and chirality of the tube, and the ambient temperature are taken into consideration. It is demonstrated that defects result in a dramatic reduction of thermal conductivity. Doping and Stone-Wales (SW) defects have greater effect on armchair tubes, while vacancy affects the zigzag ones more. Thermal conductivity of the nanotubes increases, reaches a peak, and then decreases with increasing temperature. The temperature at which the thermal conductivity peak occurs is dependent on the defect type. Different from SW or vacancy tubes, doped tubes are similar to the perfect ones with a sharp peak at the same temperature. Thermal conductivity goes up when the tube length grows or diameter declines. It seems that the length of thermal conductivity convergence for SW tubes is much shorter than perfect or vacancy ones. The SW or vacancy tubes are less sensitive to the diameter change, compared with perfect ones.     

Structural,electronic and magnetic properties of hcp Fe,Co and Ni nanowires encapsulated in zigzag carbon nanotubes

The structural, electronic and magnetic properties of hcp transition metal (TM = Fe, Co or Ni) nanowires TM₄ encapsulated inside zigzag nanotubes C(m, 0) (m = 7, 8, 9, 10, 11 or 12), along with TM _n (n = 4, 10 or 13) encapsulated inside C(12, 0), have been systematically investigated using the first-principle calculations. The results show that the TM nanowires can be inserted inside a variety of zigzag carbon nanotubes (CNTs) exothermically, except from the systems TM₄@(7, 0) and TM₁₃@(12, 0) which are endothermic. The charge is transferred from TM nanowires to CNTs, and the transferred charge increases with decreasing CNT diameter or increasing nanowire thickness. The magnetic moments of hybrid systems are smaller than those of the freestanding TM nanowires, especially for the atoms on the outermost shell of the nanowires. The magnetic moment per TM atom of TM/CNT system increases with increasing CNT diameter or decreasing nanowire thickness. Both the density of states and spin charge density analysis show that the spin polarization and the magnetic moments of all hybrid systems mainly originate from the TM nanowires, implying these systems can be applied in magnetic data storage devices.     

Electronic properties of a silicon carbide nanotube under uniaxial tensile strain: a density function theory study

The electronic properties of an armchair (4,4) single-walled silicon carbide nanotube (SWSiCNT) with the length and diameter of 22.4 and 6.93 Å, respectively under different tensile strains are investigated by density functional theory (DFT) calculation. The change of highest occupied molecular orbital and lowest unoccupied molecular orbital (HOMO–LUMO) gap of the nanotube has been observed during the elongation process. Our results show that the gap will significantly decrease linearly with the increase of axial strain. Two different slopes are found before and after an 11% strain in the profiles of the HOMO–LUMO gap. The radial buckling has been performed to investigate the radial geometry of nanotube. The partial density of states (PDOS) of two neighboring Si and C atoms of the nanotube are further studied to demonstrate the strain effect on the electronic structure of SiC nanotube. The PDOS results exhibit that the occupied states of Si atom and the unoccupied states of C atom are red-shifted and blue-shifted under stretching, respectively. Mulliken charge analysis reveals that Si and C atoms will become less ionic under the larger strain. The electron differences of silicon carbide nanotube (SiCNT) on tensile loading are also studied.     

碳纳米管量子点的电子输运

在紧束缚近似下,利用常量相互作用模型和Landauer-Bütticker公式,计算了扶手椅型和金属锯齿型碳纳米管量子点的电导。发现,根据碳纳米管量子点的长度的不同,扶手椅型碳纳米管量子点的电导可以具有两电子或四电子的壳层结构。而锯齿型碳纳米管量子点的电导却仅有四电子的壳层结构,与长度无关;这些理论结果与之前的实验结果符合的很好。     

Cyclacenes and short zigzag nanotubes with alternanting Ge―C bonds: theoretical impacts of Ge on the ground state,strain, and band gap

[6]_n Cyclacenes and short zigzag [6]_n carbon nanotubes (n = 5–10) have unstable singlet open‐shell (S_os) ground states. We have boosted their stability by implementing altering Ge―C bonds that acquire S_cs ground states with larger band gap (ΔE_LUMO–HOMO) at B3LYP and BPW91 levels of theory. Fascinatingly, homodesmic calculations indicated release of almost two folds of strain energy upon substitution of germanium for carbon. This may turn the green lights for synthesis of germanium–carbon cyclacenes and short zigzag nanotubes. Copyright © 2014 John Wiley & Sons, Ltd.