High-energy limit of massless Dirac fermions in multilayer graphene using magneto-optical transmission spectroscopy

We have investigated the absorption spectrum of multilayer graphene in high magnetic fields. The low-energy part of the spectrum of electrons in graphene is well described by the relativistic Dirac equation with a linear dispersion relation. However, at higher energies (>500 meV) a deviation from the ideal behavior of Dirac particles is observed. At an energy of 1.25 eV, the deviation from linearity is approximately 40 meV. This result is in good agreement with the theoretical model, which includes trigonal warping of the Fermi surface and higher-order band corrections. Polarization-resolved measurements show no observable electron-hole asymmetry.     

Weak localization in monolayer and bilayer graphene

We describe the weak localization correction to conductivity in ultra-thin graphene films, taking into account disorder scattering and the influence of trigonal warping of the Fermi surface. A possible manifestation of the chiral nature of electrons in the localization properties is hampered by trigonal warping, resulting in a suppression of the weak anti-localization effect in monolayer graphene and of weak localization in bilayer graphene. Intervalley scattering due to atomically sharp scatterers in a realistic graphene sheet or by edges in a narrow wire tends to restore weak localization resulting in negative magnetoresistance in both materials.     

Anisotropic optical conductivity and electron–hole asymmetry in doped monolayer graphene in the presence of the Rashba coupling

In this study, the optical conductivity of substitutionary doped graphene is investigated in the presence of the Rashba spin orbit coupling (RSOC). Calculations have been performed within the coherent potential approximation (CPA) beyond the Dirac cone approximation. Results of the current study demonstrate that the optical conductivity is increased by increasing the RSOC strength. Meanwhile it was observed that the anisotropy of the band energy results in a considerable anisotropic optical conductivity (AOC) in monolayer graphene. The sign and magnitude of this anisotropic conductivity was shown to be controlled by the external field frequency. It was also shown that the Rashba interaction results in electron–hole asymmetry in monolayer graphene.     

Weak-localization magnetoresistance and valley symmetry in graphene

Because of the chiral nature of electrons in a monolayer of graphite (graphene) one can expect weak antilocalization and a positive weak-field magnetoresistance in it. However, trigonal warping (which breaks p-->-p symmetry of the Fermi line in each valley) suppresses antilocalization, while intervalley scattering due to atomically sharp scatterers in a realistic graphene sheet or by edges in a narrow wire tends to restore conventional negative magnetoresistance. We show this by evaluating the dependence of the magnetoresistance of graphene on relaxation rates associated with various possible ways of breaking a "hidden" valley symmetry of the system.     

Band structure effects on the nonlinear optical response of bilayer graphene

Recently, Rabi-like oscillations that occur far from resonance were predicted in monolayer graphene. In bilayer graphene, when the trigonal warping effect is taken into account, this new Rabi frequency shows a zero non-trivial minimum as a function of the strength of the applied electric field in addition to the trivial minimum at zero field. The zero non-trivial minimum occurs where the ‘leg pocket’ of the Fermi surface develops, described in the pioneering work of McCann et al. [Eur. Phys. J. Special Topics 148, 91 (2007)]. Thereafter, the anomalous Rabi frequency varies linearly with the square of the intensity of the applied field consistent with a bilayer system without trigonal warping. It is seen that this anomalous Rabi frequency is affected much more by trigonal warping than the conventional Rabi frequency. The induced current is also significantly affected by the trigonal warping. A fully numerical solution of the optical Bloch equations completely corroborates the analytical findings and provides a basis for the approximation schemes employed.     

Resonant Raman spectroscopy of graphene grown on copper substrates

A study of resonant Raman spectroscopy of the as-grown graphene on copper foils is presented. Different laser energies have been used to excite the sample, in order to obtain the dependence of the Raman features (intensities, frequencies and line widths) on the laser energy. We show that the normalised spectra acquired using green laser lines are more intense, with a maximum around 2.3 eV. Moreover, the results show a broader 2D (or G′) band when a UV laser is used to excite the sample, which is explained by the manifestation of the trigonal warping effect in the dispersion of electrons and phonons around the Dirac point.     

Magnetic Kronig-Penney-type graphene superlattices: finite energy Dirac points with anisotropic velocity renormalization

We study the energy band structure of magnetic graphene superlattices with delta-function magnetic barriers and zero average magnetic field. The dispersion relation obtained using the T-matrix approach shows the emergence of an infinite number of Dirac-like points at finite energies, while the original Dirac point is still located at the same place as that for pristine graphene. The carrier group velocity at the original Dirac point is isotropically renormalized, but at finite energy Dirac points it is generally anisotropic. An asymmetry in the width between the wells and the barriers of the periodic potential induces a shift of the original Dirac point in the zero-energy plane, keeping the velocity renormalization isotropic.     

Manipulation of resonant tunneling by substrate-induced inhomogeneous energy band gaps in graphene with square superlattice potentials

We investigate the resonant transmission of Dirac electrons through inhomogeneous band gap graphene with square superlattice potentials by transfer matrix method. The effects of the incident angle of the electrons, Fermi energy and substrate-induced Dirac gaps on the transmission are considered. It is found that the Dirac gap of graphene adds another degree of freedom with respect to the incident angle, the Fermi energy and the parameters of periodic superlattice potentials (i.e., the number, width and height of the barriers) for the transmission. In particular, the inhomogeneous Dirac gap induced by staggered substrates can be used to manipulate the transmission. The properties of the conductance and Fano factor at the resonant peaks are found to be affected by the gaps significantly. The results may be helpful for the practical application of graphene-based electronic devices.     

Quantum electrodynamics with anisotropic scaling: Heisenberg-Euler action and Schwinger pair production in the bilayer graphene

We discuss quantum electrodynamics emerging in the vacua with anisotropic scaling. Systems with anisotropic scaling were suggested by Hořava in relation to the quantum theory of gravity. In such vacua, the space and time are not equivalent, and moreover they obey different scaling laws, called the anisotropic scaling. Such anisotropic scaling takes place for fermions in bilayer graphene, where if one neglects the trigonal warping effects the massless Dirac fermions have quadratic dispersion. This results in the anisotropic quantum electrodynamics, in which electric and magnetic fields obey different scaling laws. Here we discuss the Heisenberg-Euler action and Schwinger pair production in such anisotropic QED.     

Unconventional pairing in three-dimensional topological insulators with a warped surface state

We study the effect of the Fermi surface anisotropy (hexagonal warping) on the superconducting pair potential, induced in a three-dimensional topological insulator (TI) by proximity with an s-wave superconductor (S) in presence of a magnetic moment of a nearby ferromagnetic insulator (FI). In the previous studies, similar problem was treated with a simplified Hamiltonian, describing an isotropic Dirac cone dispersion. This approximation is only valid near the Dirac point. However, in topological insulators, the chemical potential often lies well above this point, where the Dirac cone is strongly anisotropic and its constant energy contour has a snowflake shape. Taking into account this shape, we show that a very exotic pair potential is induced on the topological insulator surface. Based on the symmetry arguments we also discuss the possibility of a supercurrent flowing along the S/FI interface, when an S/FI hybrid structure is formed on the TI surface.     

The enigma of the quantum Hall effect in graphene

We apply Laughlin’s gauge argument to analyze the ν=0 quantum Hall effect observed in graphene when the Fermi energy lies near the Dirac point, and conclude that this necessarily leads to divergent bulk longitudinal resistivity in the zero temperature thermodynamic limit. We further predict that in a Corbino geometry measurement, where edge transport and other mesoscopic effects are unimportant, one should find the longitudinal conductivity vanishing in all graphene samples which have an underlying ν=0 quantized Hall effect. We argue that this ν=0 graphene quantum Hall state is qualitatively similar to the high field insulating phase (also known as the Hall insulator) in the lowest Landau level of ordinary semiconductor two-dimensional electron systems. We establish the necessity of having a high magnetic field and high mobility samples for the observation of the divergent resistivity as arising from the existence of disorder-induced density inhomogeneity at the graphene Dirac point.     

The low energy electronic band structure of bilayer graphene

We employ the tight binding model to describe the electronic band structure of bilayer graphene and we explain how the optical absorption coefficient of a bilayer is influenced by the presence and dispersion of the electronic bands, in contrast to the featureless absorption coefficient of monolayer graphene. We show that the effective low energy Hamiltonian is dominated by chiral quasiparticles with a parabolic dispersion and Berry phase 2π. Layer asymmetry produces a gap in the spectrum but, by comparing the charging energy with the single particle energy, we demonstrate that an undoped, gapless bilayer is stable with respect to the spontaneous opening of a gap. Then, we describe the control of a gap in the presence of an external gate voltage. Finally, we take into account the influence of trigonal warping which produces a Lifshitz transition at very low energy, breaking the isoenergetic line about each valley into four pockets.     

Electronic and magnetic properties of quasifreestanding graphene on Ni

For the purpose of recovering the intriguing electronic properties of freestanding graphene at a solid surface, graphene self-organized on a Au monolayer on Ni(111) is prepared and characterized by scanning tunneling microscopy. Angle-resolved photoemission reveals a gapless linear pi-band dispersion near K[over] as a fingerprint of strictly monolayer graphene and a Dirac crossing energy equal to the Fermi energy (EF) within 25 meV meaning charge neutrality. Spin resolution shows a Rashba effect on the pi states with a large (approximately 13 meV) spin-orbit splitting up to EF which is independent of k.     

Anisotropic scattering rates and antiferromagnetic precursor effects in the t-t'-U Hubbard model

We have investigated the evolution of the electronic properties of the t-t'-U Hubbard model with hole doping and temperature. Due to the shape of the Fermi surface, scattering from short wavelength spin fluctuations leads to strongly anisotropic quasi-particle scattering rates at low temperatures near half-filling. As a consequence, significant variations with momenta near the Fermi surface emerge for the spectral functions and the corresponding ARPES signals. At low doping the inverse lifetime of quasiparticles on the Fermi surface is of order varying linearly in temperature from energies of order t down to a very low energy scale set by the spin fluctuation frequency while at intermediate doping a sub-linear T-dependence is observed. This behavior is possibly relevant for the interpretation of photoemission spectra in cuprate superconductors at different hole doping levels. Received 31 July 2000     

Shubnikov-de Haas oscillations of massive Dirac fermions in a Dirac antiferromagnet SrMnSb2

We investigate the physical properties of massive Dirac fermions in SrMnSb₂ using transport, specific heat, electronic structure calculations, and Shubnikov-de Haas (SdH) oscillations. SrMnSb₂ is a candidate Dirac antiferromagnet, consisting of the MnSb layers and the distorted square net of Sb atoms with a zigzag chain structure. This structural distortion leads to gap opening at the band crossing point found in the square lattice of the sister compound SrMnBi₂ but leaves another Dirac band crossing near the Brillouin zone boundary. The small 2D Fermi surface with a light electron mass and a small Fermi energy is confirmed by the large resistivity anisotropy, the large Seebeck coefficient, and also the angle and temperature dependent SdH oscillations. The Berry phase obtained from the SdH oscillations is trivial, in contrast to the case of SrMnBi₂. The relatively large spin orbit coupling gap and the small Fermi energy in SrMnSb₂ is found to be essential to understand this contrasting behavior of the massive Dirac fermions as compared to SrMnBi₂. Our observations demonstrate that the Berry phase of the mobile electrons in SrMnSb₂ is sensitive to the Fermi level change and can be tuned by doping or deficiency.     

Der Einfluß von Gitterfehlern auf den elektrischen Widerstand und die Thermokraft von Metallen

Starting from theGreen's function formulation of the scattering of crystal electrons by a localized perturbation, the transition probability is calculated. It is shown that the kernel of the transport equation degenerates if the scattering potential is characterized by its Wannier function matrix elements. In this way a solution in closed form of the transport problem can be obtained for arbitrary anisotropic Fermi surfaces and anisotropic scatterers. The general solution is applied to the calculation of the effect of point defects on the electrical resistivity and the thermoelectric power of metals at low and high temperatures.     

Formation of quasi-free graphene on the Ni(111) surface with intercalated Cu,Ag, and Au layers

This paper reports on a study by angle-resolved photoelectron and low-energy electron energy loss spectroscopy of graphene monolayers, which are produced by propylene cracking on the Ni(111) surface, followed by intercalation of Cu, Ag, and Au atoms between the graphene monolayer and the substrate, for various thicknesses of deposited metal layers and annealing temperatures. It has been shown that the spectra of valence-band π states and of phonon vibrational modes measured after intercalation become similar to those characteristic of single-crystal graphite with weak interlayer coupling. Despite the strong coupling of the graphene monolayer to the substrate becoming suppressed by intercalation of Cu and Ag atoms, the π state branch does not reach at the K point of the Brillouin zone the Fermi level, with the graphene coating itself breaking up partially to form graphene domains. At the same time after intercalation of Au atoms, the electronic band structure approaches the closest to that of isolated graphene, with linear π-state dispersion near the K point of the Brillouin zone, and the point of crossing of the filled, (π), with empty, (π*), states lying in the region of the Fermi level, which makes this system a promising experimental model of the quasi-free graphene monolayer.     

The tunneling density-of-states of interacting massless Dirac fermions

We calculate the tunneling density-of-states (DOS) of a disorder-free two-dimensional interacting electron system with a massless-Dirac band Hamiltonian. The DOS exhibits two main features: (i) linear growth at large energies with a slope that is suppressed by quasiparticle velocity enhancement, and (ii) a rich structure of plasmaron peaks which appear at negative bias voltages in an n-doped sample and at positive bias voltages in a p-doped sample. We predict that the DOS at the Dirac point is non-zero even in the absence of disorder because of electron–electron interactions, and that it is then accurately proportional to the Fermi energy. The finite background DOS observed at the Dirac point of graphene sheets and topological insulator surfaces can therefore be an interaction effect rather than a disorder effect.     

On the fermi velocity and static conductivity of epitaxial graphene

The models of the energy density of states of a metallic or semiconductor substrate, which does not further lead to divergences, have been proposed to calculate the characteristics of epitaxial graphene. The Fermi velocity of epitaxial graphene formed on a metal has been shown to be greater than that in free-standing graphene irrespective of the position of the Fermi level. On the contrary, the Fermi velocity of graphene formed on a semiconductor is lower so that the lower is the Fermi velocity, the closer is the Fermi level to the center of the band gap of the semiconductor. The zero-temperature static conductivity σ of epitaxial graphene has been calculated according to the Kubo-Greenwood formula. The quantity σ_m of undoped graphene on metal has been shown to decrease with an increase in the deviation of the Dirac point ?_D (which coincides with the Fermi level of the system) from the center of the conduction band of the substrate. In the case of the semiconductor substrate, the static conductivity σ_sc turns out to be nonzero and amounts to σ_sc = 2e ²/π?-only under the condition ?_F =?′_D, where ?′_D is the Dirac-point energy renormalized by the interaction with the substrate.     

Perturbation theory for a hamiltonian linear in quasimomentum

Perturbation theory has been proposed to take into account small terms in the multiband Hamiltonian, which lead to significant changes such as the trigonal warping of the Fermi surface. The theory is similar to the “cross technique” and is reduced to the self-energy corrections to the matrix Green’s function. A particular application to graphite and a graphene bilayer has been given.