A comparison between the mechanical and thermal properties of single-walled carbon nanotubes and boron nitride nanotubes

Carbon nanotubes (CNTs) are semimetallic while boron nitride nanotubes (BNNTs) are wide band gap insulators. Despite the discrepancy in their electrical properties, a comparison between the mechanical and thermal properties of CNTs and BNNTs has a significant research value for their potential applications. In this work, molecular dynamics simulations are performed to systematically investigate the mechanical and thermal properties of CNTs and BNNTs. The calculated Young’s modulus is about 1.1 TPa for CNTs and 0.72 TPa for BNNTs under axial compressions. The critical bucking strain and maximum stress are inversely proportional to both diameter and length-diameter ratio and CNTs are identified axially stiffer than BNNTs. Thermal conductivities of (10, 0) CNTs and (10, 0) BNNTs follow similar trends with respect to length and temperature and are lower than that of their two-dimensional counterparts, graphene nanoribbons (GNRs) and BN nanoribbons (BNNRs), respectively. As the temperature falls below 200 K (130 K) the thermal conductivity of BNNTs (BNNRs) is larger than that of CNTs (GNRs), while at higher temperature it is lower than the latter. In addition, thermal conductivities of a (10, 0) CNT and a (10, 0) BNNT are further studied and analyzed under various axial compressive strains. Low-frequency phonons which mainly come from flexure modes are believed to make dominant contribution to the thermal conductivity of CNTs and BNNTs.     

Electronic properties of C-doped boron nitride nanotubes studied by first-principles calculations

The geometry and electronic structure of C-doped BNNTs are investigated using the hybrid Heyd–Scuseria–Ernzerhof. The van Hove singularity (vHs) peaks split in density of states (DOS) The impurity states decrease the bandgap.

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Molecular-dynamics simulation of defect formation energy in boron nitride nanotubes

We investigate the defect formation energy of boron nitride nanotubes (BNNTs) using molecular dynamics simulation. Although the defect with tetragon–octagon pairs (TOP) is favored in the flat BNNTs cap, BN clusters, and the growth of BNNTs, the formation energy of the TOP defect is significantly higher than that of the pentagon–heptagon pairs (PHP) defect in BNNTs. The PHP defect reduces the effect of the structural distortion caused by the TOP defect, in spite of homoelemental bonds. The instability of the TOP defect generates the structural transformation into BNNTs with no defect at about 1500 K. This mechanism shows that the TOP defect is less favored in case of BNNTs.     

First principle study of unzipped boron nitride nanotubes

Systematic first principle calculations have been used to explain the dangling bonds behaviour in the rolling up of a boron nitride nanoribbon (BNNR) to construct a single-walled boron nitride nanotube (BNNT). We found in armchair BNNR two degenerate dangling bonds split and move up to higher energies due to symmetry breaking of system. While in zigzag BNNR changing the topology of system does not affect on metallic features of the band structure, but in unzipped BNNT case a metallic-semimetallic phase transition occurs. Considering the width dependent electronic properties of hydrogen passivated armchair BNNRs, exhibit zigzag behaviour of energy gap in agreement with previous results.     

Variation of the electronic properties of zigzag boron nitride nanotubes by Al-doping: a DFT study

Boron nitride nanotubes (BNNTs) are semiconductors with a wide band gap. In comparison with carbon nanotubes (CNTs), BNNTs have higher chemical stability, excellent mechanical properties and higher thermal conductivity. In this paper, we study the effect of diameters and substituting B and N atoms of various zigzag BNNTs with Al, on structural and electronic properties of BNNTs in solid state using the density functional theory method. The results of calculations of density of states and band structure (band) showed that the band gap between the valence and conduction level increases as a result of the enhancement of tube diameter of BNNTs. Finally, the results showed that the electronic properties of the pristine BNNTs can be improved by doping Al atom in the zigzag configuration of tubes.     

5d过渡金属原子吸附氮化硼纳米管的第一性原理计算

采用基于密度泛函理论的第一性原理计算方法, 研究了氮化硼纳米管六元环中心吸附5d过渡金属原子后体系的几何结构, 电子结构和磁性性质. 研究发现, 吸附原子向一个氮原子或硼原子偏移; 吸附体系在费米能级附近出现明显的杂质能级; 各个体系的总磁矩随原子序数出现规律性变化, 局域磁矩主要分布在吸附原子上.     

Surface adhesion between hexagonal boron nitride nanotubes and silicon based on lateral force microscopy

This study presents the surface adhesion between hexagonal boron nitride nanotube (BNNT) and silicon based on lateral manipulation in an atomic force microscope (AFM). The BNNT was mechanically manipulated by the lateral force of an AFM pyramidal silicon probe using the scan mechanism in the imaging mode. With a controlled normal force of the AFM probe and the lateral motion, the lateral force applied to the BNNT could overcome the surface adhesion between BNNT and silicon surface. The individual BNNT is forced to slide and rotate on the silicon surface. Based on the recorded force curve, the calculated shear stress due to surface adhesion is 0.5 GPa. And the specific sliding energy loss is 0.2 J/m². Comparing BNNTs and carbon nanotube (CNT), the shear stress and specific sliding energy loss of BNNT are an order of magnitude larger than that of CNT. Therefore, the results show that the surface adhesion between BNNT and silicon surface is higher than that of CNT.     

The effect of local electronic interaction on the optical properties of boron–nitride nanotubes

We investigate the behavior of optical absorption of boron–nitride nanotubes (6,0) in the context of Hubbard model at the paramagnetic sector. GW approximation has been implemented in order to make self-energy matrix of electronic system. Afterwards, the real and imaginary parts of transverse dielectric functions have been obtained using linear response theory. The results show that the frequency gap in the optical absorption decreases with Coulomb repulsion strength. Moreover the results show that the local Coulomb interaction leads to the appearance of the excitonic effects in the optical spectrum. Finally the effects of electronic concentration on the frequency behavior of imaginary part of dielectric function have been investigated.     

Boron nitride nanotubes composed of four- and eight-membered rings

The properties of boron nitride nanotubes composed of four- and eight-membered rings (referred to as four-eight-membered rings BNNTs) were calculated using density functional theory (DFT). The calculated results show that the band gap of the four-eight-membered rings BNNTs is greatly reduced, down to a range of 2.530–3.975 eV. The band gap decreases as the number of walls increases, not only enabling the allotropes to show semiconductor properties but also to fully meet the third-generation semiconductor band gap requirements, furthermore, the band gap decreases significantly with the number of walls increases.     

Synthesis of boron nitride nanostructures from catalyst of iron compounds via thermal chemical vapor deposition technique

For the first time, patterned growth of boron nitride nanostructures (BNNs) is achieved by thermal chemical vapor deposition (TCVD) technique at 1150 °C using a mixture of FeS/Fe₂O₃ catalyst supported in alumina nanostructured, boron amorphous and ammonia (NH₃) as reagent gas. This innovative catalyst was synthesized in our laboratory and systematically characterized. The materials were characterized by X-ray diffraction (XRD), Raman spectroscopy, Fourier-transform infrared spectroscopy (FTIR), Thermogravimetric analysis (TGA), Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM). The X-ray diffraction profile of the synthesized catalyst indicates the coexistence of three different crystal structures showing the presence of a cubic structure of iron oxide and iron sulfide besides the gamma alumina (γ) phase. The results show that boron nitride bamboo-like nanotubes (BNNTs) and hexagonal boron nitride (h-BN) nanosheets were successfully synthesized. Furthermore, the important contribution of this work is the manufacture of BNNs from FeS/Fe₂O₃ mixture.     

Formation and atomic structures of boron nitride nanohorns encaging boron nitride cluster

Boron nitride (BN) nanohorns were synthesized by arc-melting YB₆ powders. Method, and atomic structure models for BN nanohorns encaging Y@B₃₆N₃₆ were proposed from high-resolution electron microscopy. The molecular mechanics calculation indicated that BN clusters with metal atoms would be stabilized by being encaged in double-walled BN nanohorns.     

Raman spectrum of single-walled boron nitride nanotube

Using the spectral moments method, the calculations of the Raman spectra of single-walled boron nitride nanotubes (SW-BNNTs) were performed in the framework of the force constants model. Spectra were computed for chiral and achiral nanotubes for different diameters and lengths. The Raman scattering intensities were determined using the bond-polarizability model and a good agreement with group theory analysis was found. We show that the modes in the low frequency region are very sensitive to the nanotube diameter variation, whereas the ones associated to the tangential region are chirality dependent. The number of Raman active modes, their frequencies, and intensities depend on the length of the nanotube.     

Nanotube bundle oscillators: Carbon and boron nitride nanostructures

In this paper, we investigate the oscillation of a fullerene that is moving within the centre of a bundle of nanotubes. In particular, certain fullerene–nanotube bundle oscillators, namely C₆₀-carbon nanotube bundle, C₆₀-boron nitride nanotube bundle, B₃₆N₃₆-carbon nanotube bundle and B₃₆N₃₆-boron nitride nanotube bundle are studied using the Lennard–Jones potential and the continuum approach which assumes a uniform distribution of atoms on the surface of each molecule. We address issues regarding the maximal suction energies of the fullerenes which lead to the generation of the maximum oscillation frequency. Since bundles are also found to comprise double-walled nanotubes, this paper also examines the oscillation of a fullerene inside a double-walled nanotube bundle. Our results show that the frequencies obtained for the oscillation within double-walled nanotube bundles are slightly higher compared to those of single-walled nanotube bundle oscillators. Our primary purpose here is to extend a number of established results for carbon to the boron nitride nanostructures.     

Phonon spectrum boron nitrideof single-wallednanotubes

Based on a force constant model, we investigated the phonon spectrum and then specific heat of single-walled boron nitride nanotubes. The results show that the frequencies of Raman and infrared active modes decrease with increasing diameter in the low frequency, which is consistent with the results calculated by density functional theory. The fitting formulae for diameter and chirality dependence of specific heat at 300K are given.     

A DFT study for adsorption of CO on Ni,Pd and Pt atoms doped (7, 0) boron nitride nanotube

By using density functional theory calculations, we investigated the structural, electronic and magnetic properties of carbon monoxide (CO) adsorption on the pure, Ni, Pd and Pt doped atoms in zigzag single-walled (7, 0) boron nitride nanotubes (BNNTs). The results indicated that compared to the pure (7, 0) BNNTs, replacing B atom by Ni, Pd and Pt atoms can significantly increase the adsorption energy of CO gas on the BNNTs. The adsorption energies of CO gas on the pure (7, 0) Ni, Pd and Pt doped (7, 0) BNNTs are ?0.2013, ?1.746, ?1.593 and ?2.257 eV, respectively. Our results revealed that in comparison with the pure (7, 0) BNNTs, CO gas is chemisorbed on the transition metal doped (7, 0) BNNTs with the appreciable adsorption energy. In addition, it was found that by doping these atoms, band gap energy of the pure (7, 0) BNNTs is considerably decreased. These observations suggested that the Pt doped (7, 0) BNNTs can be introduced as a promising candidate in gas sensor devices for detecting CO gas.     

The intrinsic lifetime of low-frequency zone-centre phonon modes in silicon nanowires and carbon nanotubes

Estimates of the intrinsic lifetime of low-frequency zone-centre phonon modes in silicon nanowires and carbon nanotubes have been presented from the application of Fermi’s golden rule formula based upon an elastic continuum model for cubic anharmonicity. In particular, results have been presented for the lowest non-zero mode in both nanostructures, and also the breathing mode in the nanotube. Except for the ultrathin nanowire, the lifetime increases with size and decreases with an increase in temperature. Typically, these modes have a lifetime of the order of nanoseconds, almost a thousand times larger than the lifetimes of optical phonon modes in the corresponding bulk materials. Also, at room temperature the lifetime of the lowest non-zero mode is nearly an order of magnitude larger in the (20,20) nanotube than in the nanowire of similar thickness (width 2.2 nm).     

碳、碳氮和硼碳氮纳米管场发射性能的比较研究

采用高温热解法在860℃分别制备出了碳、碳氮和硼碳氮纳米管，提纯后利用丝网印刷工艺分别将它们制备成薄膜，并测试了它们的场发射性能.结果表明：碳纳米管、碳氮纳米管和硼碳氮纳米管薄膜的开启电场分别为2.22，1.1和4.4V/μm，当电场增加到5.7V/μm时，它们的电流密度分别达到1400，3000μA/cm²和小于50μA/cm².碳和碳氮纳米管薄膜的场增强因子分别为10062和11521.可见，碳氮纳米管的场发射性能优于碳纳米管，而硼碳氮纳米管的场发射性能比前两者要差.解释了这三种纳米管场发射性能差别的原因. 关键词： 碳纳米管 碳氮纳米管 硼碳氮纳米管 场发射     

Propagation of extremely short pulses in a graphene–boron nitride bilayer

In this study we investigate the propagation of extremely short optical pulses in a thin film formed by a graphene grown on a boron nitride substrate. Conduction electrons of the system are described on the basis of the long-wavelength effective Hamiltonian in the case of low temperatures; the electromagnetic field being taken into account within the framework of the classical Maxwell equations. The time evolution of the pulse?s shape for different speeds and maximum amplitudes of an extremely short pulse is analyzed.     

轴压和扭转复合载荷作用下氮化硼纳米管屈曲行为的分子动力学模拟

采用分子动力学方法模拟了氮化硼纳米管在轴压和扭转复合荷载作用下的屈曲和后屈曲行为.在各加载比例下,给出了初始线性变形阶段和后屈曲阶段原子间相互作用力的变化,确定了屈曲临界荷载关系.通过对屈曲模态的细致研究,从微观变形机理上分析了纳米管对不同外荷载力学响应的差异.研究结果表明,扶手型和锯齿型纳米管均呈现出非线性的屈曲临界荷载关系,复合加载下的屈曲行为具有强烈的尺寸依赖性.温度升高将导致屈曲临界荷载的下降,且温度的影响随加载比例的变化而变化.无论在简单加载或复合加载中,同尺寸的碳纳米管均比氮化硼纳米管具有更强地抵抗屈曲荷载的能力.