高剂量As离子注入对高阻Si电学特性的影响

为了实现低电阻率厚度为纳米级的红外探测器电极材料,通过离子注入的方法将高浓度的As掺入高阻单晶硅,并经过快速退火处理,获得了厚度～200 nm、电阻率为10-4?·cm的Si:As电极层.原子力显微镜测试结果表明,离子注入的样品表面依然较平整,表面均方根粗糙度仅为0.5 nm.使用聚焦离子束设备(FIB)制备高分辨透射电镜(HRTEM)样品,高浓度的As掺入虽然会损伤Si晶格、引入大量的缺陷,但是HRTEM观察表明合适的退火工艺能够使得完整晶格得到恢复,而且霍尔效应和扩展电阻的测量分析表明,用离子注入方法制备的Si:As层载流子浓度达到2.5×1020cm-3、电子迁移率高于40 cm2/V·s,具有优异的电学性能,适合用作各种Si基光电器件的背电极.     

In_(0.82)Ga_(0.18)As材料的低温电学性质研究

利用低压-金属有机化学气相沉积(LP-MOCVD)设备,采用两步生长及缓冲层热退火处理在InP衬底上制备了高质量的In0.82Ga0.18As外延材料.研究了缓冲层退火前后In0.82Ga0.18As外延材料的低温电学性质,通过变温霍尔效应测试得到了载流子的浓度和迁移率随温度变化的关系,并利用位错散射、极化光学声子散射等对实验数据进行了拟合.结果表明,实验值与理论值符合较好,在较低温度下(150K),位错散射起主要作用,而在较高的温度下(250K),极化光学声子散射占主要地位.     

沉积温度和快速退火对磁控溅射法制备的AZO薄膜性能的影响

探究了不同衬底温度下由磁控溅射法制备的氧化锌掺铝(AZO)薄膜的结构、光学和电学性能,以及快速退火处理对样品电学性能的改善作用.实验结果表明:随着衬底温度的升高,薄膜样品的载流子浓度、霍尔迁移率和电导率提高,并在400℃附近达到较好水平,但高温的衬底沉积出的样品薄膜的XRD图谱半高全宽相对于低温衬底并没有明显变小.测量退火处理后的样品薄膜的电学性质,发现短时间的真空退火能改善低温沉积的AZO薄膜的电导率,与提高衬底温度有类似的改善效果,700℃的退火温度能达到最好效果.     

研究快讯 用分步注入法改善SOI—SIMNI薄膜材料的电学性能

采用常规方法和分步注入法制备SOI－SIMNI（Silicon on Insulator-Separation by Implantation of Nitrogen）薄膜材料,用液氦低温霍耳效应进行了分析测量,测量结果表明：分步注入法制备得到的样品具有低的薄层电阻R□和较高的载流子迁移率,实验证明用分步注入法可以明显改善SIMNI薄膜材料的电学性能,对实验结果和机理进行了解释。     

螺旋位错对螺旋型硒化铋纳米片电学特性的影响

利用场效应晶体管和导电原子力显微术,系统研究了螺旋型和平面型硒化铋纳米片的电学特性.结果显示,两种纳米片均体现出高的电导率及类金属导电特性.与平面型样品相比,有更高的载流子浓度和更低的迁移率.导电原子力显微术表征表明,螺旋型纳米片中的螺旋位错边缘相比平台有更高的电导,反映出螺旋位错可以提供更多的载流子.补偿了样品的低迁移率特性,提升了样品的电导率.     

MgxZn1-xO/Au/MgxZn1-xO夹层透明导电薄膜的制备及光电性质研究

采用操作简单的溶胶-凝胶法和射频磁控溅射法在石英衬底上分别制备了MgxZn1-xO薄膜和MgxZn1-xO/Au/MgxZn1-xO夹层结构的透明导电薄膜并对样品进行退火处理。利用紫外-可见分光光度计、X射线衍射仪、光致发光、霍尔效应测试对在不同退火温度下薄膜的晶体结构、光学和电学性质进行表征分析,并研究退火温度对其影响。测试结果表明:所制备的薄膜样品均具有良好的c轴(c-axis)取向并呈现出六角纤锌矿结构。Mg组分的增加使得ZnO基薄膜的光学带隙逐渐增大,PL发光谱和吸收光谱的谱线出现了明显的蓝移现象,但薄膜的电学特性有所降低。而在MgxZn1-xO/Au/MgxZn1-xO夹层结构的薄膜样品中,Au夹层的存在使薄膜的光学性质变差,在紫外区域透光率约为60%。但薄膜的电学性质得到明显改善,相比MgxZn1-xO薄膜,其电阻率和迁移率显著提高。此外通过高温退火处理可以有效提高所制备薄膜的晶体质量,进一步提高样品电学特性,其中经过500℃退火后的薄膜迁移率达到了40.9cm2·Vs-1,电阻率为0.005 7Ω·cm。但随着退火温度的进一步升高,薄膜晶体尺寸从25.1nm增大到32.4nm,从而降低了该薄膜的迁移率。因此该夹层结构的MgxZn1-xO/Au/MgxZn1-xO薄膜对于促进ZnO基透明导电薄膜在深紫外光学器件中的应用有重要作用。     

基于变温霍尔效应方法的一类n-GaN位错密度的测量

结合莫特相变及类氢模型,采用浅施主能量弛豫方法,计算了一类常见n-Ga N光电子材料的载流子迁移率,给出了精确测定其刃、螺位错密度的电学方法.研究表明,对于莫特相变材料(载流子浓度超过1018cm~(-3)),以位错密度Ndis、刃螺位错密度比β、刃位错周围浅施主电离能εD1、螺位错周围浅施主电离能εD2为拟合参数的载流子迁移率模型与实验曲线高度符合,拟合所得刃、螺位错密度与X射线衍射法或化学腐蚀方法的测试结果也基本一致.实验结果表明,莫特相变材料虽然载流子浓度高、霍尔迁移率低,但其位错密度却并不一定高过载流子浓度低、霍尔迁移率高的材料,应变也无明显差异,因此,莫特相变与刃、螺位错密度及两类位置最浅的施主均无关系,可能是位置较深的施主或其他缺陷所致,需要比一般杂质带高得多的载流子浓度.该方法适合霍尔迁移率在0 K附近不为零,霍尔迁移率曲线峰位300 K左右及以上的各种生长工艺、各种厚度、各种质量层次的薄膜材料,能够对迁移率曲线高度拟合,迅速给出莫特相变材料的相关精确参数.     

晶体硅太阳电池双层电极优化分析与实验研究

相对于单层电极结构,优化的前表面双层电极能够明显减小功率损失,改善晶体硅太阳电池的电学特性．本文对晶体硅太阳电池的双层电极进行了优化分析和实验研究.通过扫描电子显微镜观测将双层电极的截面抽象为更接近于实际的半椭圆型,建立了太阳电池前表面的双层电极模型,理论分析了双层电极的电学损失和光学损失.结合丝网印刷后光诱导电镀太阳电池的实验,得到了理论和实验上的最优化光诱导电镀增厚电极厚度与丝网印刷电极宽度的关系.所得到的理论和实验结果符合良好.由于并不涉及电极制备的具体技术,双层电极理论模型普遍适用于多种类型的双层电极结构.     

生长温度对MOCVD外延ZnO纳米结构的影响

为了探究生长温度对外延ZnO纳米结构的影响,得到ZnO纳米结构可控生长的生长温度条件。利用金属有机化学气相沉积（MOCVD）方法,设计并获得了不同生长温度的ZnO外延样品,并对所有样品进行了表面形貌、光学特性、电学特性表征和结晶质量表征。实验结果表明:600℃生长的ZnO纳米柱横向尺寸最小,为65 nm左右,其光学特性也相对较好,晶体衍射峰的半峰宽最小,为0.165°,晶粒尺寸最大,为47.6 nm;电学性质相对最优的为640℃生长的ZnO样品,霍尔迁移率高达23.5 cm²/（V·s）。通过结果分析发现,生长温度能影响外延ZnO的生长模式,从而影响ZnO的形貌、光学、电学和晶体质量等特性。     

在低温常压条件下制备一种可用于有机光伏器件空穴传输层的复合膜

空穴传输层是有机光伏器件中的重要组成部分。本文制备了一种可用于空穴传输层的高分子复合膜,制备过程采用了静电自组装(LbL)的方式和低温常压的还原条件。相比于其他制备方式,本文提出的方法不仅厚度可控而且具有更好的电学性能。实验中采用紫外-可见光吸光光度计(UV-Vis spectrometer)对结果进行验证。实验表明,低温常压条件下的还原结果与传统的高温真空条件得到的结果非常接近。低温条件减少了对高分子链的破坏,使得复合膜的空穴迁移率可以由10~(-6) cm~2/Vs提升到10~(-5) cm~2/Vs的数量级。     

Mechanical properties and photomechanical effect in GaP single crystals

Mechanical properdes of GaP single crystals have been investigated from 100° to 300°C by observing dislocation rosette patterns on indented specimen surfaces. It has been found that GaP has mechanical properties which are common to those of other III–V compounds or elemental semiconductors in several points: the {111} surface polarity dependence of microhardness, the mobility difference between α- and β-dislocations, and the conduction type dependence of dislocation mobility. The growth of dislocation rosettes is suppressed by baking specimens in air. Contrary to the case of II–VI compounds, illumination of visible light during indentation enhances the mobility of dislocations. These experimental results are discussed in terms of an effect of electronic charge of dislocation on its mobility.     

红荧烯晶体薄膜的制备及应用研究进展

红荧烯具有导电性好、吸收系数高等优良的荧光特性和半导体特性,是目前报道的单晶迁移率最高的材料,在有机光电器件中有很好的发展前景,受到科研人员的广泛关注。目前国内外主要采用真空蒸镀方法和溶液加工方法制备红荧烯晶体薄膜,采用各种制备工艺来提高红荧烯薄膜质量。本文在系统介绍红荧烯晶体薄膜制备工艺研究进展的基础上,归纳总结了掺杂种类/聚合物浓度、后处理工艺/实验温度等对红荧烯晶体性能的影响,简要概述了红荧烯薄膜在有机光电子器件应用研究中所取得的研究成果,最后展望了基于红荧烯晶体薄膜的光电器件的发展趋势。     

The effect of hydrogenation/dehydrogenation cycles on palladium physical properties

A series of hydrogenation/dehydrogenation cycles have been performed on palladium wire samples, stressed by a constant mechanical tension, in order to investigate the changes in electrical and mechanical properties. A large increase of palladium electrical resistivity has been reported due to the combined effects of the production of defects linked to hydrogen insertion into the host lattice and the stress applied to the sample. An increase of the palladium sample strain due to hydrogenation/dehydrogenation cycles in α→β→α phase transitions is observed compared to the sample subjected to mechanical tension only. The loss of initial metallurgical properties of the sample occurs already after the first hydrogen cycle, i.e. a displacement from the initial metallic behavior (increase of the resistivity and decrease of thermal coefficient of resistivity) to a worse one occurs already after the first hydrogen cycle. A linear correlation between palladium resistivity and strain, according to Matthiessen's rule, has been found.     

Dislocation density reduction limited by inclusions in kerfless high‐performance multicrystalline silicon

Kerfless high‐performance multicrystalline silicon is an emerging material for photovoltaic applications that is characterized by having a smaller grains, and general lower average dislocation density than conventional ribbon multicrystalline silicon. Although a significant improvement over state‐of‐the‐art, dislocation reduction at the crystal growth stage is not complete. Here we employ an annealing process previously tested in conventional ingot mc‐Si to reduce dislo‐ cation clusters that remain after crystal growth. A sample is subjected to a 1390 °C annealing process for 24 h and its dislocation density reduction is evaluated. We employ infrared birefringence imaging to observe that despite achieving significant average dislocation density reduction, if inclusions are present in the sample, these may serve to nucleate new dislocations due to thermal strain. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

高温高压下黑云斜长片麻岩的电性研究

 在压力1 GPa、温度250~1 100 ℃、频率0.1 Hz~1 MHz的条件下,采用阻抗谱方法,对来自阴山造山带的太古代黑云斜长片麻岩进行了电导率实验研究。实验发现：（1） 所有样品的阻抗谱都是由一个大的高频半圆弧Ⅰ和一个小的被压缩了的低频弧Ⅱ组成,阻抗弧Ⅰ主要代表矿物颗粒内部传导机制,阻抗弧Ⅱ更有可能代表的是样品和电极之间的传导机制;（2） 电导率随温度的变化遵循Arrhenian定律,但在700~750 ℃间有近一个量级的跳跃,通过对比实验前后样品的显微照片和探针分析数据,认为这一电导率的大幅跳跃可能是样品中黑云母发生大量脱水熔融的缘故;（3） 在高温段750~1 100 ℃,部分熔融样品的电导率主要由钠离子传导控制;（4） 在低温段250~700 ℃,样品的激活能为0.53 eV;在高温段750~1 100 ℃,样品的激活能为1.41 eV。激活能的改变可能与样品的结构变化有关,还与样品和熔体中钠的含量以及扩散有关。     

Conductance fluctuation and degeneracy in nanocontact between a conductive AFM tip and a granular surface under small-load conditions

Conductive-tip atomic force microscope (c-AFM) has been extensively used in measuring electrical properties of surface nanostructures, but the electrical conduction in c-AFM tip-sample contacts in nanometer scale is not well understood. In the present work, we experimentally investigated the electrical properties of the nanocontact between a W₂C-coated c-AFM tip and granular gold film under small-load (∼5 nN) at ambient air conditions. We found that under a constant bias voltage (10 V), the electrical current passing through the tip-sample junction at fixed location of sample surface dramatically fluctuated and degenerated. By quantitatively estimating the mechanical and electrical aspects of the nanocontact, we explained the observed phenomena as mechanical instabilities, electron tunneling transport and atomic rearrangements at the contact junction. We think that our results are important for the realistic application of c-AFM in nanoelectronic measurement.     

高压烧结对n型PbTe基材料热电性能的影响

 采用高压烧结技术制备了按偏离化学计量比配制的PbTe基热电材料（Pb_0.55Te_0.45），重点研究了烧结压力对材料热电性能的影响。研究结果表明：高压烧结过程能有效降低材料中的晶格缺陷，从而显著改变样品中的载流子浓度及其迁移率。与未经烧结的常压熔融样品相比，高压烧结样品的Seebeck系数得到大幅提高，电导率略有降低，室温热导率降低了50%，所以高压烧结样品的品质因子得到较大提高。当烧结压力为2 GPa时，所得样品在700 K时其品质因子达到0.59，相比未经烧结的常压熔融样品提高了150%。     

Modelling of contact effects in microcrystalline silicon thin-film transistors

Hydrogenated microcrystalline silicon has recently emerged as a promising material system for large-area electronic applications such as thin-film transistors and solar cells. In this paper, thin-film transistors based on microcrystalline silicon were realized with charge carrier mobilities exceeding 40 cm²/Vs. The electrical characteristics of the microcrystalline silicon thin-film transistors are limited by the influence of contact effects. The influence of the contact effects on the charge carrier mobility was investigated for transistors with different dimensions of the drain and source contacts. The experimental results were compared to an electrical model which describes the influence of the drain and source contact dimension on the transistor parameters. Furthermore, the Transmission Line Method was applied to investigate the contact effects of the thin-film transistors with different drain and source contact dimensions. Finally, optimized device geometries like the channel length of the transistor and dimension of the drain and source contacts were derived for the microcrystalline transistors based on the electrical model.     

Using electrical noise to enhance the ability of humans to detect subthreshold mechanical cutaneous stimuli

Stochastic resonance (SR) is a phenomenon wherein the response of a nonlinear system to a weak input signal is optimized by the presence of a particular, nonzero level of noise. Our objective was to demonstrate cross-modality SR in human sensory perception. Specifically, we were interested in testing the hypothesis that the ability of an individual to detect a subthreshold mechanical cutaneous stimulus can be significantly enhanced by introducing a particular level of electrical noise. Psychophysical experiments were performed on 11 healthy subjects. The protocol consisted of the presentation of: (a) a subthreshold mechanical stimulus plus electrical noise, or (b) no mechanical stimulus plus electrical noise. The intensity of the electrical noise was varied between trials. Each subject's ability to identify correctly the presence of the mechanical stimulus was determined as a function of the noise intensity. In 9 of the 11 subjects, the introduction of a particular level of electrical noise significantly enhanced the subject's ability to detect the subthreshold mechanical cutaneous stimulus. In 2 of the 11 subjects, the introduction of electrical noise did not significantly change the subject's ability to detect the mechanical stimulus. These findings indicate that input electrical noise can serve as a negative masker for subthreshold mechanical tactile stimuli, i.e., electrical noise can increase the detectability of weak mechanical signals. Thus, for SR-type effects to be observed in human sensory perception, the noise and stimulus need not be of the same modality. From a bioengineering and clinical standpoint, this work suggests that an electrical noise-based technique could be used to improve tactile sensation in humans when the mechanical stimulus is around or below threshold. (c) 1998 American Institute of Physics.     

磁致塑性效应下的位错动力学机制

基于磁致塑性效应探讨了磁场作用下位错受力和运动机制, 对磁场下的位错动力学机制进行了定性和定量分析. 选择氧化铝纳米颗粒强化铝基复合材料为实验对象, 在不同磁感应强度下(0–3 T范围)对试样进行磁场处理. 结果表明, 随着磁感应强度增加, 位错密度提高, 表现出塑性变形特征. 分析认为, 磁场力不足以驱动位错运动, 位错增殖诱因在于磁致塑性效应, 即磁场改变了顺磁性位错芯与障碍间自由基对中的电子自旋状态, 促使自由基对从强键结合单线态向弱键结合三重态转化, 位错穿越障碍时所需能量减小, 退钉扎趋势明显; 位错运动中的限速环节是位错在障碍处的停留, 磁场诱发的电子激发和原子重排速度很快, 表现出磁场作用的高效性. 磁场起作用的临界磁感应强度约为3 T, 低于3 T时磁场作用随磁场强度增加而变得明显, 高于3 T 后磁场效果会减小. 计算得到3 T 时位错运动速度是10^-3 m/s, 位错线长度比未加磁场时增加两个数量级, 位移与磁感应强度平方和磁场作用时间成正比. 实验和理论研究表明磁场具有改善材料塑性变形能力的显著作用.