铜基碳纳米管薄膜的制备及其强流脉冲发射特性研究

为了研究碳纳米管薄膜的强流脉冲发射特性, 采用酞菁铁高温热解方法在机械抛光铜基底上直接生长了碳纳米管薄膜 (Cu-CNTs), Cu-CNTs生长方向各异. 在20 GW脉冲功率源系统中采用二极结构对Cu-CNTs的强流脉冲发射特性进行研究, 研究结果表明: 在单脉冲发射条件下, 随脉冲电场峰值的增大, Cu-CNTs薄膜的发射电流峰值呈线性增加, 当宏观场强为15.5 V/μ时, 发射脉冲电流的峰值可达到5.56 kA, 对应的发射电流密度0.283 kA/cm², 当宏观场强达到32.0 V/μ时, 发射脉冲电流的峰值可达到18.19 kA, 对应的发射电流密度0.927 kA/cm², 发射电流能力明显优于已有报道. 在相同峰值, 连续多脉冲情况下, 碳纳米管薄膜具有良好的发射可重复性, 且发射性能稳定. 关键词： 强流脉冲发射 碳纳米管 铜基底 稳定性     

白碳纳米晶薄膜及其场致电子发射特性

利用微波等离子体化学气相沉积方法,以甲烷、氢混合气体为反应气体,具有钛镀层的玻璃作为衬底,制备了具有sp¹杂化结构的白碳纳米晶薄膜。利用X射线衍射、俄歇电子能谱,以及扫描电子显微镜对薄膜结构进行了表征。以白碳纳米晶薄膜为阴极,以镀有ITO透明导电薄膜玻璃为阳极,采用二极管结构,测试了白碳纳米晶薄膜的场致电子发射特性。开启电场为2.5 V/μm,在电场为5 V/μm时的电流密度为200μA/cm²。对白碳纳米晶薄膜生长机理,以及其场致电子发射机制进行了讨论。     

Effect of heat-pretreatment of the graphite rod on the quality of SWCNTs by arc discharge

Single-walled carbon nanotubes (SWCNTs) have been synthesized in high yield by the dc arc discharge technique under heat-pretreatment of the graphite rod conditions. Before executing arc discharge, the graphite rods containing the catalysts were heat treated at 600, 700, 800 and 900 °C for 1–3 h, respectively. Effects of heat-pretreatment of the graphite rod on the quality of SWCNTs by arc discharge were investigated. The heat-treatment temperature and time were found to be crucial for a high yield of high-purity SWCNTs. Optimum parameter was found to be at the heat-treatment temperature of 800 °C for 2 h. The SWCNTs synthesized under the optimum condition have better field-emission characteristics. The turn-on field needed to produce a current density of 10 μA/cm² is found to be 1.9 V/μm and the threshold field where current density reaches 10 mA/cm² is 3.9 V/μm.     

单晶CeB_6发射性能及磁电阻各向异性研究

采用X射线劳厄定向法对单晶CeB_6的(110),(111),(210)和(310)晶面进行了定向.系统研究了不同晶面热发射性能及磁场对电阻率的影响规律.结果表明,当阴极温度为1873 K时(110),(111),(210)和(310)晶面最大发射电流密度分别为38.4,11.54,50.4和20.8 A/cm~2,表现出了发射性能的"各向异性".RichardsonDushman公式计算逸出功结果表明,上述晶面中(210)晶面具有最低的逸出功,为2.4 eV.从实际应用来看,该晶面有望替代商业化的钨灯丝成为新一代的场发射阴极材料.磁电阻率测量结果显示,当晶体从[001]方向旋转至[011]方向时电阻率从73μ?·cm变化至69μ?·cm,表明电阻率在磁场中沿不同方向同样具有"各向异性"的特点.     

沉积工艺参数对碳纳米管薄膜场发射性能的影响

利用微波等离子体化学气相沉积(MWPCVD)方法,在不锈钢衬底上直接沉积碳纳米管膜。通过SEM、拉曼光谱和XRD表征,讨论了制备温度和甲烷浓度对碳纳米管膜场发射的影响。结果表明:不同条件下制备的碳纳米管膜的场发射性能有很大差异,保持氢气的流量(100sccm)、生长时间(10min)、反应室压力不变,当甲烷流量为8sccm、温度为700~800℃时,场发射性能最好,开启场强仅为0.8V/μm,发射点分布密集、均匀。     

超短脉冲激光烧蚀石墨产生的喷射物的时间分辨发射光谱研究

本文使用不同激光能流(18 J/cm²–115 J/cm²)和脉冲宽度(50 fs–4 ps)的超短脉冲激光在真空中(4×10^-4 Pa)烧蚀高定向热解石墨. 通过测量烧蚀喷射物的时间分辨发射光谱研究喷射物的超快时间演化. 在喷射物发射光谱中, 观察到了C₂基团的天鹅带光谱系统, 416 nm附近C₁₅基团的由电子能级¹Σ_u⁺ 和¹Σ_g⁺之间的振动跃迁产生的光谱峰以及连续谱. 50 fs, 115 J/cm²的脉冲激光烧蚀产生的喷射物的连续谱的强度衰减分为快速下降和慢速下降两个阶段(以20 ns时间延迟为分界). 这表明连续谱是由两种不同的组分贡献的. 快速下降阶段, 连续谱主要由碳等离子体通过韧致辐射产生; 慢速下降阶段, 连续谱主要由烧蚀后期产生的大颗粒碳簇的热辐射贡献. 实验结果还揭示了激光能流的提高, 会明显增加喷射物中碳等离子体和激发态C₂的含量, 但对质量稍大的C₁₅的影响较小; 此外, 50 fs脉冲激光烧蚀产生的连续谱的存在时间会随着激光能流的减小而增大, 这说明低能流更有利于在烧蚀后期产生碳簇. 脉宽主要影响喷射物连续谱的时间演化. 4 ps脉冲激光烧蚀产生的连续谱的整个时间演化过程明显慢于50 fs脉冲产生的连续谱.     

不同电场下碳纳米管场致发射电流密度研究

本文运用密度泛函理论和金属电子论, 深入研究了碳纳米管场致发射电流的变化规律. 结果显示其发射电流密度取决于体系的态密度、赝能隙、管长和局域电场, 在不同范围电场下的变化规律不同. 在较低电场下, 发射电流密度随电场增强而近似线性增大(对应的宏观电场须小于18 V· μm^-1); 但在较高电场下, 发射电流密度随外电场增加呈现非周期性振荡增长趋势, 碳纳米管表现为电离发射. 本文进一步研究了金属性碳纳米管电导率在不同电场下的变化规律.     

钬铥双掺钨酸镱钾激光晶体光谱参数计算

采用顶部籽晶提拉法（TSSG）生长了钬铥双掺钨酸镱钾（KHo_0.04Tm_0.06Yb_0.9（WO₄）₂）激光晶体。测试了该晶体的吸收及荧光光谱,计算了其光谱参数。实验结果表明：该晶体在890~1 000 nm范围吸收带较宽,半峰宽为90 nm,计算了主峰1 000 nm处吸收截面为16.92×10^-20 cm²;Tm³⁺在1 690~1 812 nm范围存在较宽的吸收带,半峰宽为118 nm,易于实现Yb→Ho、Yb→Tm、Tm→Ho的能量传递。根据Judd-Ofelt理论,计算了该晶体的光谱强度参数。根据Tm³⁺、Ho³⁺、Yb³⁺离子能级图,讨论了产生1 750~2 200 nm荧光发射的3种能量传递方式。最后计算了主峰2 030 nm处受激发射截面为3.47×10^-20 cm²,表明该晶体可作为2 μm波段优异的激光增益介质。     

高Yb3+/Er3+掺杂的磷基有源光纤材料的光谱性质

研究了Yb³⁺/Er³⁺共掺60P₂O₅-15BaO-10Al₂O₃-5ZnO-10R₂O（R=Na,K）以P₂O₅为主体的磷基有源光纤材料的光谱性质,以及不同Yb³⁺/Er³⁺掺杂浓度对光谱性质的影响规律。当Er³⁺浓度为9.100×10¹⁹/cm³、Yb³⁺的掺杂浓度为5.407×10²⁰/cm³、Yb³⁺/Er³⁺浓度比为6：1时,玻璃样品在1 531 nm处的受激发射截面最大,为6.17×10^-21 cm²。同时,其荧光寿命为9.73 ms,荧光半高宽为53.16 nm,发射截面与半高宽的乘积为3.28×10^-32 m³,综合性能最佳。     

氮/硫共掺杂多孔碳纳米片的制备及其电化学性能

二维多孔碳材料能够提供较短的电解质扩散通道和较快的电子传输过程,因此在能量转换和储存装置中表现出优异的电化学性能.近年来的理论和实验研究表明,两元素共掺杂可使二维多孔碳材料的电化学性能得到明显提高.因此,共掺杂二维多孔碳材料的制备成为目前的研究热点之一.本文以甲基橙-FeCl₃复合物为模板引发剂制备了甲基橙掺杂的聚吡咯纳米管,通过对聚吡咯纳米管与KOH混合物（重量比为1：2）在700 ℃进行热处理,制备了二维石墨烯状氮/硫共掺杂多孔碳纳米片.所制备的氮/硫共掺杂多孔碳纳米片相互连结,形成了多级孔结构.氮气吸附分析表明多级孔结构包含微孔、介孔和大孔,这使所制备的氮/硫共掺杂多孔碳纳米片具有较高的比表面积（1744.58 m²/g）和孔体积（1.01 cm³/g）.共掺杂多孔碳纳米片中的掺杂氮以吡啶氮、吡咯氮和季胺氮形式存在,掺杂硫以噻吩硫和氧化态硫形式存在,二者之间的协同效应能够明显改善碳纳米片表面的浸润性,增加表面电化学活性点.这些特征使所制备的氮/硫共掺杂多孔碳纳米片表现出优异的电化学性能.用氮/硫共掺杂多孔碳纳米片制备的量子点敏化太阳能电池对电极,对多硫电解质再生反应的电催化活性与传统PbS对电极相近,所组装电池的光电转换效率可达到4.30%（100 mW/cm²）.氮/硫共掺杂多孔碳纳米片作为超级电容器电极材料,以6 M（1 M=1 mol/L）KOH为电解质,电流密度为0.4 A/g,比电容达到312.8 F/g.即使电流密度增加到20 A/g,比电容仍达到200.6 F/g,表明其具有较好的倍率性能.     

Improved emission uniformity and stability of printed carbon nanotubes in electrolyte

In this paper, we studied the effect of NaCl electrolyte as a surface treatment on improving the uniformity and stability of field emission of screen-printed carbon nanotubes (CNTs). A short period of the electrolyte treatment of CNT films remarkably increase emission uniformity and stability. Furthermore, the field emission characteristics of screen-printed carbon nanotubes (CNTs) such as low turn-on field, high emission current density and strong adhesion of the CNT film on the substrate were also reinforced after post-treated. SEM, TEM and Raman spectrum study revealed that uniformity and stability of field emission is enhanced by two factors. Firstly, the electrolyte treatment appeared to render the CNT surfaces more actively by exposing more CNTs form the CNT paste, which dominates initial uniformity and stability of field emission. Secondly, the number of opened CNTs and defects CNTs of CNT film were increased by electrical current energy.     

Er~(3+)掺杂Na_5Lu_9F_(32)单晶体的红外光学特性

采用坩埚下降法成功地生长了Er~(3+)离子掺杂的Na_5Lu_9F_(32)(NLF)单晶体。测定了单晶体在400~2 500nm波段的吸收光谱与2.5~25μm红外波段的透过光谱。Na_5Lu_9F_(32)单晶体在400~7 150 nm宽波段范围具有好的光学透过性,在该波段的透过率达到90%。在透过光谱中几乎观察不到2.7μm中红外波段的吸收,说明单晶体中OH~-离子的含量极低。根据测定的吸收光谱,通过Judd-Ofelt理论计算了Er~(3+)在单晶体中的光学强度参数Ω_t(Ω_2=2.08,Ω_4=2.07,Ω_6=0.75),以及相应的辐射跃迁速率、荧光分支比和荧光寿命。根据Futchbauer-Ladenburg公式估算了样品的发射截面大约分别为1.42×10~(-20)cm~2(~4I_(13/2)→~4I_(15/2))和1.66×10~(-20)cm~2(~4I_(11/2)→~4I_(13/2))。在980 nm半导体激光器(LD)激发下,研究了单晶体的近红外1.5μm与中红外2.7μm的发射光谱特性。     

三维多孔复合碳层对电极的制备及其光伏性能研究

基于TiO_2光阳极、Pt对电极的染料敏化太阳能电池(DSSC)因其优异的光电转换特性受到了广泛的关注,然而Pt昂贵的价格制约了其发展与应用.针对这一问题,本文设计、制备了一种由相对致密且高导电的石墨膜(PC层,底层)及多孔碳纳米颗粒膜(CC层,顶层)构成的低成本、高性能三维多孔复合碳层对电极.基于该CC/PC对电极的DSSC具有优异的光伏性能:在1.5标准太阳光照射下,其填充因子高达65.28%(较Pt对电极高4.1%)、光电转换效率高达5.9%(为Pt对电极的94.2%). CC/PC对电极的优异光伏性能主要归因于其独特的三维多孔导电结构,该结构有极高的比表面积和丰富的催化反应活性位,有利于电子的快速传输及离子的快速转移,在这些因素的协同作用下,其光电转换性能大大改善.     

Er3+/Yb3+共掺锗碲酸盐玻璃的光谱性质及Judd-Ofelt理论分析

用高温熔融法制备了一种Er³⁺/Yb³⁺共掺的70TeO₂-5Li₂O-10B₂O₃-15GeO₂玻璃,测试和分析了其热稳定性、吸收光谱、荧光光谱以及红外吸收谱。应用Judd-Ofelt理论计算了玻璃中Er³⁺的强度参数、自发辐射跃迁几率、辐射寿命以及荧光分支比,同时比较了OH^-的存在对玻璃发光特性的影响。结果表明:这种玻璃具有较好的热稳定性,较宽的荧光半峰全宽和较大的受激发射截面,是一种较为合适的宽带光纤放大器的基质材料,OH^-的存在使得Er³⁺离子的荧光强度降低,荧光寿命减小。     

High critical current density YBa2Cu3O7−δ tapes prepared by the surface-oxidation epitaxy method

YBa₂Cu₃O_7−δ (YBCO) films with high critical current density (J_c) were successfully fabricated on nickel tapes buffered with epitaxial NiO. NiO was prepared on the textured nickel tape by the surface-oxidation epitaxy (SOE) method. We have reported so far a critical temperature (T_c) of 87 K and J_c=4–6×10⁴ A/cm² (77 K, 0 T) for the YBCO films on NiO/Ni tapes. To enhance the superconducting properties of the YBCO films on the SOE-grown NiO, depositions of thin oxide cap layers such as YSZ, CeO₂, and MgO on NiO were investigated. These oxide cap layers were epitaxially grown on NiO and provided the template for the epitaxial growth of YBCO films. Substantially improved data of T_c=88 K and J_c=3×10⁵ A/cm² (77 K, 0 T) and 1×10⁴ A/cm² (77 K, Hc, 4 T) were obtained for YBCO film on NiO, by using a MgO cap layer with a thickness of 50 nm. The method described in this paper is a simple way to produce long YBCO tape conductors with high-J_c values.     

Electron stimulated desorption of CO from Pd1/W(110)

The electron impact behavior of CO adsorbed on Pd₁/W(110) was investigated. The desorption products observed were neutral CO, CO⁺, and O⁺. After massive electron impact residual carbon, C/W = 0.15, but not oxygen was also found, suggesting that energetic neutral O, not detected in a mass analyzer must also have been formed. Formation of β-CO, i.e., dissociated CO with C and O on the surface was not seen. The total disappearance cross section varies only slightly with coverage, ranging from 9 × 10 ⁻¹⁸ cm² at low to 5 × 10⁻¹⁸ cm² at saturation (CO/W = 0.75). The cross section for CO⁺ formation varies from 4 × 10⁻²² cm² at satura to 2 × 10⁻²¹ cm² at low coverage. That for O⁺ formation is 1.4 × 10⁻²² cm² at saturation and 2 × 10⁻²¹ cm² Threshold energies are similar to those found previously [J.C. Lin and R. Gomer, Surf. Sci. 218 (1989) 406] for CO/W(110) and CO/Cu₁/W(110) which suggests similar mechanisms for product formation, with the exception of β-CO on clean W(110). It is argued that the absence or presence of β-CO in ESD hinges on its formation or absence in thermal desorption, since electron impact is likely to present the surface with vibrationally and rotationally activated CO in all cases; β-CO formation only occurs on surfaces which can dissociate such CO. It was also found that ESD of CO led to a work function increase of the remaining Pd₁/W(110) surface of 500 meV, which could be annealed out only at 900 K. This is attributed to surface roughness, caused by recoil momentum of energetic desorbing entities.     

Measurements of vacuum field emission from bio-molecular andsemiconductor-metal eutectic composite microstructures

Designs, calculations, and initial data are presented from a program investigating the use of biomolecular and eutectic composite microstructures as vacuum field-emission cathodes. Calculations, supported by the initial data, indicate that these electron sources should be capable of macroscopic beam current densities, J⩾100 A/cm², without the formation of a surface plasma. The absence of a plasma allows these cathodes to operate as a long-pulse to DC electron sources. The designs avoid the formation of surface plasma by forcing the current emitted from the tips to transit a thin layer of silicon. The natural high-field current-limiting nature of the silicon serves to prevent the ablation of tip structures and the subsequent formation of cathode plasma. Initial data obtained with these microstructures has demonstrated Fowler-Nordheim characteristic emission. Coated bio-molecular composite cathodes have demonstrated stable DC current densities of ~100 mA/cm², and the eutectic composite cathodes have demonstrated similarly stable DC current densities of ~1 A/cm²     

Dielectrics for passivation of planar InP/InGaAs diodes

We have investigated dielectrics for passivating planar InP or InGaAs photodiodes: thermally evaporated Al₂O₃ and SiO, sputtered Si₃N₄ and SiO₂ and also SiO₂ using chemical vapour deposition. The measured bulk and field-effect properties of all dielectrics excluding sputtered SiO₂ were suitable for this application. In planar InGaAs diodes with Cd diffused or Mg implanted p⁺-region a disordered dielectric/semiconductor surface led to high reverse current densities above 1 mA/cm². In InP diodes with p⁺-diffusion and dielectrics exhibiting positive flatband voltages, e.g. Si₃N₄ and Al₂O₃, reverse current densities of 10 μA/cm² were measured probably caused by a slight inversion of the semiconductor surface. With a SiO or CVD-SiO₂ passivating layer on n-InP lowest leakage current densities (10 nA/cm²) were achieved. Very low dark-current planar photodiodes InP/InGaAsP/InGaAs have been fabricated using SiO passivation (30 nA/cm²).     

Self-sustained self-sputtering: a possible mechanism for thesuperdense glow phase of a pseudospark

Self-sustained self-sputtering occurring during high current pseudospark operation (≈10⁴ A/cm², I>10³ A) is shown to be a possible mechanism for the superdense glow. The mean-free-path for ionization of cathode material sputtered in the low-current hollow-cathode phase can be shorter than the cathode-anode gap distance, and ionized atoms can return to the cathode surface, self-sputtering with a yield greater than one. The self-sputtered cathode atoms become ionized in the beam of electrons accelerated in the cathode sheath. A large fraction of the discharge current at the cathode surface can be carried uniformly over the surface by ions and a very high electron emission density is not required to maintain the high current     

双电子传输层对有机发光二极管效率及其衰减的改善

采用Bphen和BCP制成双电子传输层(Doubleelectrontransportlayers, DETLs)的有机发光二极管器件, 与Bphen单独作ETL的器件相比, DETLs器件具有较小的空穴漏电流, 效率提升10%。与BCP独自作ETL的器件相比, 更多的电子注入使DETLs器件的效率在50~600mA/cm²的电流范围内没有衰减。BCP作ETL的器件的效率从50mA/cm²时的2.5cd/A衰减至300mA/cm²的2.1cd/A, 衰减了16%。Cs₂CO₃:BCP独自作ETL的器件效率在50~300mA/cm²的电流范围内衰减了30%, 而Bphen/Cs₂CO₃:BCP作DETLs的器件效率在50~600mA/cm²的电流范围内衰减幅度为0, 原因是Bphen阻挡了Cs原子扩散至发光层。