高组份Al值的AlxGa1-x As和AlxGa1-x As/GaAs/AlxGa1-xAs/GaAs多层结构的MOCVD生长

用自制常压MOCVD系统,在半绝缘GaAs衬底上生长高Al组份Al_xGa_1-xAs（其x值达0.83）,和Al_xGa_1-xAs/GaAs/Al_xGa_1-xAs/GaAs多层结构,表面镜面光亮。生长层厚度从几十到十几μm可控,测试表明外延层晶格结构完整,x值调节范围宽,非有意掺杂低,高纯GaAs外延层载流子浓度n_300K=1.7×10¹⁵cm^-3,n_77K=1.4×10¹⁵cm^-3,迁移率μ_300K=5900cmcm²/V.S,μ_77K=55500cm²/V.S。用电子探针,俄歇能谱仪测不出非有意掺杂的杂质,各层间界面清晰平直。 对GaAs,AlGaAs生长层表面缺陷,衬底偏角生长温度及其它生长条件也进行了初步探讨。     

在133Cs（n,γ）134Cs反应中产生的同质异能素截面比的测定

本工作是在14.8MeV中子能量下,测定了¹³³Cs（n,γ）¹³⁴Cs反应中产生的¹³⁴Cs同质异能素绝对截面: σ_n,γ^134mCs=1.76±0.14mb; σ_n,γ^134gCs=5.17±0.41mb; σ_n,γ^134m+gCs=6.93±0.55mb;同质异能素截面之比: σ_（134n）Cs/σ_（134g）Cs=0.34±0.03.这个结果与已发表的结果符合得很好。将此结果与用统计模型理论计算的结果比较,预言了自旋切割因子以及γ级联数。     

D介子与∑c+重子寿命的宇宙线数据

本文提出一个证认宇宙线中新X粒子的分析原则:筛比较法。对目前全部已知乳胶室事例进行了判定。其中结果有D介子和∑_c⁺重子的平均寿命和质量,τ（D^&;#177;）=5.8×10^-13秒,τ（D⁰）=2.0×10^-13秒,τ（∑_c⁺）（?）2.4×10^-14秒。支持△I=1的选择规则。     

240mPu形状同质异能态

利用环形固体径迹探测器,通过²³⁸U（α,2n）反应,测量了^240mPu的半衰期和激发函数.定出半衰期T_1/2=3.5±0.5ns.它与基态的能量差E_i=3.2±0.5MeV.     

高山宇宙线荷电强子流强的负正比

在海拔3220米的实验室里,用磁谱仪动量予选装置和多板云室,对落在0.23m²面积上的单根荷电强子进行了观测.考虑到各种可能的修正以后,得出在10—20 GeV/c之间,荷电强子的负正比为:N^-/N⁺=0.53±0.05.当认为N⁺只包含有P和π⁺,N^-是π^-,而且N_π+/N_π-=1时,推算出N_π-/N_p=0.9±0.1.若π^-积分谱的形式为j（>p）=Kp^-r,估算出在5—20 GeV/c的动量范围,r（?）2.3.本文也对荷电强子的积分流强作了粗略的估计,其结果是:j_⊥^p+π（>12 GeV/c）=（7.4±0.7）×10^-5cm^-2·st^-1·s^-1.     

高山5500米超高能宇宙线强子特性的研究

利用乳胶室对高山(5500米)宇宙线强子特性进行了研究. 实验给出E_h=2~20TeV能区中强子簇射的微分能量谱指数β=(2.98±0.49), 簇射的垂直流强J(E_h≥3TeV)=(400±50)m)²﹒year﹒sr, 强子在大气中的衰减长度Λ=(104±16)g/cm², 强子和铅的平均核作用长度λ_h=(15.3±3.0)cm, 介子和铅的平均核作用长度λ_m(18.6±4.7)cm, 以及5500米高度的介子流强、核子流强的比例ε=(1.0±0.4).     

Searches for the technicolor signatures via gg → W±πt± at the Large Hadron Collider

In this paper, we calculate the production of a charged top pion in association with a W boson via gg fusion at CERN's Large Hadron Collider in the context of the topcolor assisted technicolor model. We find that the total cross section of pp → gg → W^±π_t is several dozen femtobarns with reasonable values of the parameters, and the total cross section of pp → W^±π_t can reach a few hundred femtobarns when we consider the sum of the contributions of these two parton subprocesses, gg → W^±π_t and bb → W^±π_t.     

Al、Ti、V、I的快中子激发曲线

在E_n=4.5—18.3 MeV 能区,用活化法测量了²⁷Al（n,α）²⁴Na,⁴⁶Ti（n,p）⁴⁶Sc¹),⁴⁸Ti（n,p）⁴⁸Sc¹),⁵¹V（n,α）⁴⁸Sc 和¹²⁷I（n,2n）¹²⁶I 的激发曲线.在 E_n=14.61±0.20 MeV 处,以伴随粒子法作中子通量测量,得到了²⁷Al（n,α）²⁴Na 反应截面.其他反应以此截面为标准进行绝对测量.产物核放射性用经标定过效率的 NaI（Tl）闪烁谱仪测量.结果分别为117.5±3.0 mb,291.4±14.0 mb,63.7±3.2 mb,16.8±0.9 mb 和1656±68mb.最后对测量结果进行了简单的比较.     

能量为6×1014~5×1016eV的宇宙线能谱研究

1982年, 作者在悉尼大学对能量为6×10¹⁴~5×10¹⁶eV的高能宇宙线的能谱进行了实验研究. 实验采用了快速、高效率的电子仪器, 并用电子计算机进行控制, 实现了高度自动化. 研究结果表明, 初级宇宙线的积分能谱可表示为I=K.(E/E₀)^－γ, 式中γ的数值在能量E为3×10¹⁵eV附近由1.15±0.04改变为1.19±0.08.     

室温下压致铁钴镍合金的bcc→hcp相变

 本文采用高压X光衍射方法在金刚石对顶压砧中在位地（in situ）研究了Fe₆₈Co₂₄Ni₈（wt%）合金在室温下的压致bcc→hcp结构相变和直到40.5 GPa的等温压缩行为。实验结果表明该合金在常压下为bcc结构，晶格常数a₀=(0.287 0±0.000 1) nm，体积V₀=(7.119±0.007) cm³/mol，密度ρ₀=(7.981±0.008) g/cm³；在20.9 GPa附近出现bcc→hcp结构相变，两相共存压力区约10 GPa，在此区域内有晶面间距d(002)_hcp=d(110)_bcc，且原子平面(002)_hcp//(110)_bcc，hcp相比bcc相体积减小(0.33±0.02) cm³/mol；高压相hcp结构的晶格参数比值c/a=1.608±0.004；相变后原子配位数的增加使得hcp相(002)平面内及(002)平面间的最近邻原子间距比bcc相最近邻原子间距分别增大约1.6%和0.5%；用Murnaghan状态方程对实验数据进行最小二乘法拟合，得到bcc相B₀=(130±13) GPa，B₀'=12.6±0.5；hcp相V₀=(6.62±0.04) cm³/mol，B₀=(243±21) GPa，B₀'=6.8±0.3；对于该合金的bcc→fcp相变时的结构转变机制做了详细的讨论。     

BaB2O4低温相单晶体的生长及其相关体系相图的研究

本文用差热分析和X射线衍射等方法研究了BaO-Na₂O-B₂O₃三元系的两个截面:BaB₂O₄-Na₂B₂O₄和BaB₂O₄-Na₂O赝二元系的相平衡关系。BaB₂O₄-Na₂B₂O₄属共晶体系,其共晶温度为826±3℃。在BaB₂O₄-Na₂O体系中发现一个新化合物BaB₂O₄·Na₂O,该化合物在846±3℃同成分熔化。BaB₂O₄·Na₂O对BaB₂O₄和Na₂O均为共晶体系,其共晶温度分别为755±3℃和573±3℃。并根据所得的结果,分别以15mol％Na₂O和13mol％Na₂B₂O₄为助熔剂,用提拉法培养出2×4×6mm³和2×4×8mm³的低温相BaB₂O₄单晶体。 关键词：     

Smectic A order parameter measurements and critical scattering near the smectic A↔nematic phase transition in CBOOA

The temperature dependence of the order parameter for the smectic A phase of CBOOA is determined by measuring, with elastic coherent neutron scattering, the intensity of the Bragg reflection from the smectic layers. Within the experimental accuracy, the transition smectic A? nematic appears continuous in this system. However, a fit with (T_c-T)^2β yields β = 0.18 ± 0.01. Critical scattering is also observed in both phases. It can be described with an anisotropic Ornstein-Zernike law. The correlation length perpendicular to the smectic layers behaves like (T-T_c)^?v, with an exponent v = 0.47 ± 0.06. In contrast, the lateral extension of the layers seems to increase uncritically.     

Time averaging by means of a computer controlled dye-laser spectrometer

The noise characteristic of available laser sources limits the sensitivity of saturated absorption spectroscopy. Time averaging is one method to improve the signal-to-noise ratio. A computer controlled dye-laser spectrometer is described which has the capability to scan several times any selected frequency range with an absolute accuracy of ±200 kHz. The sensitivity of this system is demonstrated by measuring the isotope shift of the low abundant³⁸Ar and by detecting a weak⁸³Kr-hyperfine component.     

Transverse relaxation of sodium vapour pumped by laser light

The transverse relaxation times in a sodium atomic system for different temperatures and different buffer gas pressures have been measured. Cross sections for transverse relaxation on neon atoms and in exchange collisions have been calculated. The results are σ_Na-Ne=(9.1±0.5)x10^-23 cm² and σ_ex=(1.10±0.05)x10^-14 cm².     

Electrical characteristics of GaAs MOS capacitor and field effect transistor with atomic layer-deposited TiO2/Al2O3 dielectrics

The (NH₄)₂S treatment can reduce native oxides and passivate GaAs. Atomic layer-deposited Al₂O₃ can further remove the residue native oxides by self-cleaning. Stacked with high dielectric constant TiO₂ prepared by atomic layer deposition on Al₂O₃/(NH₄)₂S-treated GaAs MOS capacitor, the leakage current densities can reach 4.5 × 10^?8 and 3.4 × 10^?6 A/cm² at ±2 MV/cm. The net effective dielectric constant of the entire stack is 18 and the interface state density is about 4.2 × 10¹¹/cm²/eV. The fabricated enhancement-mode n-channel GaAs MOSFET exhibited good electrical characteristics with a maximum g _m of 122 mS/mm and electron mobility of 226 cm²/V s.     

Relaxation des Natrium-Grundzustandes bei Stößen mit den stabilen Helium- und Wasserstoff-Isotopen

The spin-polarization of the optically pumped Na-groundstate is investigated in presence of the stable He- and H₂-isotopes. The following disorientation cross sections are derived from the pressure dependence of the relaxation rate:σ=(16.2±2.0) · 10^?26 cm² for He³ σ=(2.4±0.5) · 10^?26 cm² for He⁴ σ=(3.9±1.5) · 10^?26 cm² for H₂ σ=(2.3±1.0) · 10^?26 cm² for D₂. These values can be compared with theoretical cross sections based on two relaxation models and indicate the existence of a relaxation mechanism involving the exchange of the electronic alkali-spin with the nuclear spin of the foreign gas.     

Ti1－xCrxO2±δ体系的相关系、晶体结构和磁性能研究

采用溶胶凝胶法制备了Ti_1-xCr_xO_2±δ体系系列样品.利用扫描电子显微镜(SEM)，X射线光电子能谱(XPS)，粉末X射线衍射分析(XRD)方法研究了Ti_1-xCr_xO_2±δ系列样品的颗粒尺寸、形貌、组分化学态、相关系和固溶区范围；并利用超导量子干涉磁强计对样品的磁性能进行了研究.采用Rietveld结构精修的方法研究了Cr的不同掺杂量对TiO₂晶体结构的影响，研究表明，1000℃烧结的样品的固溶区范围是x=0—0.03，为金红石单相；随着Cr掺杂量的增加，金红石相晶胞参数规律性地减小；当x>0.03，为金红石相和CrO₂相两相共存.综合XRD和磁性测量结果，500℃烧结的样品的固溶区范围是x=0—0.02，为锐钛矿单相；随着Cr掺杂量的增加，锐钛矿相晶胞参数规律性地减小；当x≥0.04，为锐钛矿相和绿铬矿相(Cr₂O₃)两相共存.XPS实验结果表明，500℃和1000℃退火的样品中Cr都是以Cr⁺³和Cr⁺⁶两种化学态存在，1000℃烧结的样品中可能有更多的Cr³⁺转化为Cr⁶⁺.根据M-H和M-T曲线的测试结果发现，本文500℃烧结的Ti_1-xCr_xO_2±δ体系样品当x=0—0.02时，为室温铁磁性.当x≥0.04时，由铁磁相和顺磁相所组成，在低温下有较强的铁磁性；室温下主要是顺磁相，铁磁相只占据很小的体积分数. 关键词： 1-xCr_xO_2±δ体系')" href="#">Ti_1-xCr_xO_2±δ体系 相关系 固溶区 磁性能     

BaB2O4-K2O和BaB2O4-K2B2O4赝二元系相图的研究

用X射线衍射和差热分析方法研究了BaB₂O₄-K₂O和BaB₂O₄-K₂B₂O₄赝二元系的相平衡关系。BaB₂O₄-K₂B₂O₄属共晶体系,共晶温度为850±3℃,共晶点成分为45mol％K₂O。在Ba 关键词：     

Characterization of SiON/InP MOS structure with sulfidation, fluorination, and hydrogenation

Liquid phase deposited SiON film on InP with (NH₄)₂S treatment shows superior electrical characteristics due to the reduction of native oxides and sulfur passivation. Simultaneously, HF in SiON liquid phase deposition solution can effectively reduce residual native oxides on InP and provide fluorine passivation in SiON/InP film and interface. With post-metallization annealing (PMA), hydrogen ions can further passivate defects in SiON/InP film and interface. With these treatments, the PMA-LPD-SiON/(NH₄)₂S-treated InP MOS structure shows excellent electrical characteristics. With the physical thickness of 5.4 nm, the leakage current densities can be as low as 1.25×10^?7 and 6.24×10^?7 A/cm² at ±2 V, and the interface state density is 3.25×10¹¹ cm^?2?eV^?1.     

The d(7Li,p)8Li cross section near E cm = 0.61 MeV

The absolute cross section σ of the d(⁷Li, p)⁸Li reaction near the E_cm = 0.61 MeV resonance has been measured using a ⁷Li ion beam and a windowless gas target system filled with D₂ gas. The proton yield of the reaction and the β-delayed α-activity of the residual nuclides ⁸Li were observed both concurrently with the elastic scattering yield, relating σ to the Rutherford scattering cross section σ_R. The resulting values, σ (from p) = 143.6 ± 8.9 mb and σ (from ⁸Li) = 151 ± 20 mb, lead to a weighted mean value of σ = 153 ± 6 mb (χ² = 2.26) including all available values and σ = 146 ± 5 mb (χ² = 0.05) removing some values from the data set. The consequences for the expected flux of high-energy solar neutrinos are discussed.