Refractive index dispersion in Y2O3 thin films obtained by different methods

We have studied refractive index dispersion in Y₂O₃ thin films obtained by stepwise vaporization and high-frequency ion plasma spraying in different atmospheres. We have established that regardless of the method used to obtain the films, the spectral dependence of the refractive index in the visible region of the spectrum is mainly determined by transitions from the band of 2p states of the oxygen, forming the highest unoccupied level of the valance band, to the bottom of the conduction band, formed by the 4d5s states of the ytrrium. For the studied films, we have determined the parameters of the single-oscillator approximation, the dispersion energy, the ionicity of the chemical bond, and the coordination number. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 1, pp. 129–132, January–February, 2006.     

Phosphorescence of thin benzophenone films

Institute of Physics, National Academy of Sciences of Ukraine, 46, Prospekt Nauki, Kiev 252650 Ukraine. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 62, No. 3, pp. 117–121, May–June, 1995.     

Optical properties of pure and doped Y3Fe5O12 single crystals

Institute of Physics of Solids and Semiconductors, Academy of Sciences of Belarus, 17, P. Brovka Str., GSP, Minsk, 220072. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 63, No. 4, pp. 667–675, July–August, 1996.     

Electrical conductivity studies of mixed phthalocyanine thin films

Thin films of mixed of Copper Phthalocyanine (CuPc) and Nickel Phthalocyanine (NiPc) are deposited onto a pure glass substrate by a simultaneous thermal evaporation technique at room temperature. The material D.C. electrical conductivity of films at room temperature and also films annealed at 523 K has been investigated. The optical absorption and band gaps of the films are also measured. The results show that the electrical resistance is lower for the mixed films compared with the pure samples and also the optical band gap decreases for the mixed samples compared to the pure samples.     

On the preparation and the characterization of superconducting thin films of YBa2Cu3O7−x

The results of our initial efforts to deposit thin films of YBa₂Cu₃O_7−x system on sapphire substrate are described. The deposited films are shiny black in appearance and are of quite uniform chemical composition. The annealed films exhibit zero resistance superconducting transition temperatureT _c(R=0) ranging between 23 K and 30 K.     

Structural and luminescent characteristics of pulsed laser deposited Eu3+-doped Y2O3 thin films

Thin films of Eu-doped Y₂O₃ were deposited using the pulsed laser ablation technique on amorphous fused silica substrates. The effect of oxygen partial pressure (pO₂) and substrate temperature on the structural and optical characteristics of the deposited films were investigated. All the deposited films were crystalline, showing preferred orientation along the (111) plane, irrespective of oxygen partial pressure and substrate temperature. The film deposited at 0.005?mbar pO₂ exhibited better crystallinity with minimum FWHM at a substrate temperature of 600°C. All the films deposited at various substrate temperatures and different partial pressure (at 600°C) exhibited a red luminescence peak at 615?nm corresponding to the ⁵D₀–⁷F₁ transition in Eu³⁺. Photoluminescence excitation spectra exhibited two bands, one corresponding to band to band excitation (212?nm) of the host and the other to charge transfer band excitation (245?nm). A microstructure analysis revealed that surface roughness of the as-deposited films increases with increase in oxygen partial pressure.     

Exciton-phonon interaction in Y2O3 and Sc2O3 thin films

An investigation is made of the fundamental absorption edge of Y₂O₃ thin films. Based on its temperature dependence the exciton-phonon interaction is studied, which makes it possible to interpret the absorption edge as the absorption of self-localized excitons. A number of parameters of the energy spectrum of the investigated films are determined. I. Franko State University, 50, Dragomanov St., L'vov, 290005, Ukraine. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 66, No. 1, pp. 132–134, January–February, 1999.     

Influence of Oxygen Vacancies on the Luminescence Spectra of Y2O3 Thin Films

Luminescence spectra of Y₂O₃ thin films annealed in air and in vacuum are investigated. It is established that the presence of oxygen vacancies leads to a decrease in the intensity of the luminescence band with a maximum at 3.4 eV (related to emission of selflocalized Frenkel excitons describing the excited state of a molecular ion (YO₆)^9–) and of the luminescence band with a maximum at 2.9 eV (related to the anion sublattice). It is revealed that the oxygen vacancies also lead to a decrease in the luminescence intensity in the 2.60, 2.35, 2.10. 1.90, and 1.70 eV bands that are related to radiative recombination in the donor–acceptor Y³⁺–O^2– pairs. The donor–acceptor distances are calculated.     

Fundamental absorption edge of thin films of Bi4Si3O12

The fundamental absorption edge of thin films of Bi₄Si₃O₁₂ is investigated. On the basis of its temperature dependence, exciton-phonon interaction is investigated, which made it possible to interpret the absorption edge as the absorption of autolocalized excitons. The temperature dependence of the forbidden band width is given. I. Franko Lvov State University, 50, Dragomanov St., Lvov, 290005, Ukraine. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 2, pp. 232–235, March–April, 1997.     

Pulsed laser deposition of a PBN:65 morphotropic phase boundary thin film with large electrostriction

We deposited epitaxial thin films of Morphotropic Phase Boundary (MPB) Pb_0.65Ba_0.35Nb₂O₆ (PBN:65) on MgO substrates using pulsed laser deposition. Afterwards, a novel transmission optical experiment was developed to measure the electric field-induced bending angle of the thin film sample using a divergent incident light. From which the electric field-induced strain was obtained, and it was used to calculate the electrostrictive constant of the PBN thin film. The result is 0.000875 μm²/V², and it is consistent with what we measured in the reflection experiment     

Tunneling luminescence of Y2O3 and Sc2O3 ceramics

In the present work we investigate the tunneling luminescence (TL) of Y₂O₃, Y₂O₃:Eu, and Sc₂O₃ ceramics. From an analysis of the decay kinetics of the TL it is established that the recombinational processes are described by a model involving recombination with a complex interaction. In addition, using the method of partial light sums, we show that in the ceramics investigated the mechanisms of TL are the same and the majority of radiation-induced defects in pairs are removed to distances exceeding the radius of effective tunneling transitions with a time constant of 10–100 sec. In the Y₂O₃:Eu ceramics the distances between defects decrease. TL occurs in pairs whose electron component is F-centers that are thermally released at 176 K in the Y₂O₃ ceramics and 200 K in the Sc₂O₃ ceramics. The hole components of tunneling pairs are associated with centers that are thermally released at 110 and 122 K in the Y₂O₃ ceramics and at 121 and 146 K in the Sc₂O₃ ceramics. To whom correspondence should be addressed. I. Franko Lvov State University, 50, Dragomanov Str., Lvov, 290005, Ukraine. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 66, No. 5, pp. 649–651, September–October, 1999.     

Zn1-x-yNaxCoyO薄膜的脉冲激光沉积制备及表征

采用脉冲激光沉积技术,在Si(111)衬底上成功制备出不同含量Na,Co共掺的ZnO薄膜.利用X射线衍射仪、原子力显微镜、荧光光谱仪以及四探针电阻率测试台对薄膜的结构、表面形貌和光电性质进行了表征.重点讨论了不同掺杂浓度对薄膜光电性质的影响.结果表明:Na,Co共掺没有改变ZnO的六角纤锌矿结构且掺杂导致薄膜仅有的的紫外发光峰出现红移.当Na,Co掺杂浓度分别为10%时,峰值最强且红移最明显,发光峰波长为397 nm,薄膜的电阻率最低,达到了8.34×10^-1 Ω ·cm.深入讨论了 关键词： 脉冲激光沉积 1-x-yNa_xCo_yO薄膜')" href="#">Zn_1-x-yNa_xCo_yO薄膜 光电性质 红移     

离子束溅射制备Nb2O5光学薄膜的特性研究

研究了离子束溅射(IBS)制备的Nb₂O₅薄膜的光学特性、应力、薄膜微结构等特性,系统地分析了辅助离子源的离子束能量和离子束流对薄膜特性的影响.结果显示,在辅助离子源不同参数情况下,折射率在波长550 nm处为2.310—2.276,应力值为-281—-152 MPa.在合适的工艺参数下,消光系数可小于10^-4,薄膜具有很好的表面平整度.与用离子辅助沉积(IAD)制备的薄膜相比,IBS制备的薄膜具有更好的光学特性和薄膜微结构. 关键词： 2O₅薄膜')" href="#">Nb₂O₅薄膜 离子束溅射 光学特性 应力