靶材吸收率变化与烧蚀过程熔融前靶材温度分布

讨论了脉冲激光沉积法中烧蚀阶段熔融前靶材吸收率的变化对于其温度分布的影响. 给出了靶材吸收率随时间的变化规律，并在此基础上，利用较为符合实际的高斯分布表示脉冲激光输入能量密度，建立了相应的热传导方程. 结合适当的边界条件，利用有限差分法，以硅靶材和钨靶材为例，给出了靶材熔融前温度分布随时间和深度变化的演化分布规律，同时对相关过程的物理图像进行详细的讨论.对于吸收率的变化与脉冲激光能量密度的分布对于相应过程的影响，进行了分析讨论. 结果表明，在脉冲激光中间的持续过程中，忽略靶材吸收率的变化对于最终的模拟结果有重要影响，从而导致理论结果与实验数据有较大差异. 关键词： 脉冲激光沉积 吸收率 有限差分 温度演化     

纳秒脉冲激光沉积薄膜过程中的烧蚀特性研究

研究了高能短脉冲激光薄膜制备的整个烧蚀过程.首先建立了基于超热理论的烧蚀模型，然 后利用较为符合实际的高斯分布表示脉冲激光输入能量密度，给出了考虑蒸发效应不同阶段 的烧蚀状态方程.结合适当的边界条件，以Si靶材为例，利用有限差分法得到了靶材在各个 阶段温度随时间和烧蚀深度的演化分布规律及表面蒸发速度与烧蚀深度在不同激光辐照强度 下随时间的演化规律.结果表明，在脉冲激光辐照阶段，靶材表面的蒸发效应使得靶材表面 温度上升显著放缓；在激光辐照强度接近相爆炸能量阈值时，蒸发速度与蒸发厚度的变化由 于逆流现象将显著放缓.还得到了考虑了熔融弛豫时间及蒸发效应的固-液界面随时间的演化 方程，这一结论较先前工作更具有普适性. 关键词： 脉冲激光烧蚀 热流方程 温度演化 有限差分法     

脉冲激光制备薄膜材料的烧蚀机理

研究了脉冲激光烧蚀靶材的整个过程.从包含热源项的导热方程出发，利用适当的动态边界条件，详细研究了靶材在熔融前后的温度分布规律，并且给出了熔融后的固、液分界面的变化规律.熔融后的温度演化规律和固液相界面均以解析表达式的形式给出.还根据能量平衡原理给出烧蚀面位置随时间的变化规律.以硅靶材为例计算模拟了激光烧蚀的整个过程，与实验结果符合较好. 关键词： 脉冲激光 烧蚀面 熔融 温度演化     

激光烧蚀硬铝产生等离子体温度和力学效应测量

 为了研究激光推进技术中激光与材料相互作用的机制,获取等离子体状态参数及力学参数,采用Nd:YAG被动调Q固体激光器烧蚀硬铝,通过激光诱导等离子体光谱技术测得等离子体光谱和温度,由冲量摆测得力学参数。实验结果显示：在激光功率密度0.534×10⁸ W/cm²时,靶材表面的等离子体温度在等离子体辐射过程中呈二次曲线衰减;改变靶材等离子体点燃阈值附近的激光功率密度时,随着功率密度的增加,等离子体温度、冲量耦合系数也随着增大,当功率密度达到靶材的等离子体点燃阈值时,各参数达到最大,此后随着功率密度增加,由于等离子体对能量的屏蔽作用,导致靶材表面的等离子体温度降低,等离子体获得的动能减少,靶材耦合的冲量降低。     

脉冲CO2激光烧蚀锡靶等离子体的数值研究

使用一维辐射流体力学程序MULTI模拟了脉冲CO2激光烧蚀平面锡靶的过程,研究了脉冲宽度、峰值功率密度、靶材初始密度对锡等离子体电子密度、电子温度的时空分布的影响,并结合统计分析得到最有利于产生13.5 nm 极紫外光的激光脉冲宽度。模拟结果表明,脉冲宽度为100~200 ns的长脉冲激光产生的等离子体有利于实现极紫外输出的最佳条件,通过分析等离子体的电子密度、电子温度的分布对这一结论进行了解释。临界电子密度区域有效吸收了脉冲能量,而低密度的羽辉对激光与极紫外辐射的吸收很少。采用长脉冲激光,使得辐射极紫外等离子体持续时间更长,是提高极紫外辐射效率的有效手段。同时模拟还发现,靶材初始密度对等离子体参数的影响不大。     

激光脉冲波形对烧蚀Si靶表面温度的影响

利用双温方程对激光烧蚀Si靶的过程进行了数值模拟,并结合合适的初始条件和边界条件,研究了在飞秒、皮秒激光作用下,脉冲波形(矩形、梯形、三角形和高斯形)对Si靶表面载流子和晶格温度分布的影响。结果表明:激光功率密度是影响载流子温升的主要因素,矩形脉冲激光烧蚀Si靶表面载流子的峰值温度最高,而高斯分布的脉冲引起靶面载流子峰值温度最低。可见,激光脉冲波形对Si靶表面载流子的温度分布具有重要影响。所得结果可为制备高质量的薄膜提供理论依据。     

脉冲CO_2激光烧蚀锡靶等离子体的数值模拟

使用一维辐射流体力学程序MULTI模拟了脉冲CO_2激光烧蚀平面锡靶的过程,研究了脉冲宽度、峰值功率密度、靶材初始密度对锡等离子体电子密度、电子温度的时空分布的影响,并结合统计分析得到最有利于产生13.5nm极紫外光的激光脉冲宽度。模拟结果表明,脉冲宽度为100~200ns的长脉冲激光产生的等离子体有利于实现极紫外输出的最佳条件,通过分析等离子体的电子密度、电子温度的分布对这一结论进行了解释。临界电子密度区域有效吸收了脉冲能量,而低密度的羽辉对激光与极紫外辐射的吸收很少。采用长脉冲激光,使得辐射极紫外等离子体持续时间更长,是提高极紫外辐射效率的有效手段。同时模拟还发现,靶材初始密度对等离子体参数的影响不大。     

CuBr脉冲激光动力学模型及其研究

本文通过实验观测CuBr激光等离子体中铜的自发辐射光谱,建立了五能级CuBr脉冲激光动力学模型。应用电子温度和电子密度实验值,通过计算机数值计算得到的激光脉冲波形、峰值时刻、功率等都与实验值基本相符。结果还表明:当输入功率密度不变时,通过改变缓冲气体热扩散步长,可明显改变气体温度或初始铜原子密度,从而改变激光功率。 关键词：     

激光辐照下固体材料的温度分布理论研究

 考虑到有限厚介质的表面热对流，利用格林函数方法理论计算了强激光作用下介质材料的3维温度分布，给出了温升与材料尺寸的关系式及其关系曲线。以单晶硅材料为例进行了模拟计算，结果表明：温升不仅与材料本身的性质（热容，热导率，密度）密切相关，而且还与材料的吸收系数，激光加热参数（功率密度，能量分布，光斑大小，作用时间），以及对流换热系数有关。在激光照射的初始阶段，材料表面温度迅速增加；其后，随着激光照射时间的增加，温度增加量逐步变缓。     

Compton散射下的强激光等离子体冲击波对固体的热烧蚀效应

应用多光子非线性Compton散射理论,研究了Compton散射下的强激光等离子体冲击波对固体的热烧蚀效应,给出了冲击波功率密度与靶材熔化温度及沸腾温度与加热时间的表达式,得到了冲击波照射靶材烧蚀孔的最佳实验条件。结果表明：固体的生热率提高,温度分布发生变化,作用点达到熔化和沸腾温度所需时间和功率比无散射时小。当冲击波能量为250J,到靶面的距离为70~80mm时,对靶材烧蚀孔的效果较好。当时间为1.2~3.6ms,到靶面的距离为28~80mm时,烧蚀效果较好;当能量密度为400~2800J•cm-2时,烧蚀深度成较差的线性增加,功率密度与烧蚀斑尺寸近乎成反比。     

环形激光二极管抽运棒状激光器中瞬态温度和热应力分析

直接从激光二极管发光强度的角分布出发,采用光线追迹方法获得激光棒内的热沉积分布,在此基础上采用热传导模型和热力模型,比较了不同抽运功率、不同棒半径下达到稳态温度分布的时间,并且对稳态和瞬态热应力进行了详细模拟计算。结果表明,采用环形激光二极管阵列侧面抽运的棒状激光器中的热效应问题十分严重,不同的抽运结构参量下,温度分布不同;达到稳态所需时间随棒半径增大而增加,而不受抽运功率的影响;抽运功率越大,棒内温差增大,热应力也越大;热破坏主要集中于激光棒中心区域和表面区域。     

脉冲激光烧蚀碲镉汞材料的等离子体发射谱

脉冲激光辐照处于不同背景气压下的Hg0.8Cd0.2Te材料表面,用时间和空间分辨诊断技术探测了激光照射后产生的等离子体发射谱,根据所获得的飞行时间谱测量了等离子体中粒子的出射速度,结果表明粒子速度随着出射距离的增加迅速减小,且背景气压对出射速度有很大的影响,而激光能量对粒子速度的影响不大。另外根据谱线的展宽计算了等离子体中的电子密度,结果表明,电子密度在激光辐照样品后的短时间内迅速减小,且电子密度最大的位置不是出现在靶的表面而是在距表面一定距离处。     

热图法测量激光强度时空分布的重构理论研究

为了把量热法应用于远场激光强度时空分布测量,研究了基于热像仪靶面温度测量反演入射激光强度时空分布的重构理论。针对背光面两种不同边界条件(对流-辐射热流边界和恒定温度边界)推导出了由靶面温度分布反演激光束时空分布的重构表达式。获得的分析表达式对广泛的材料具有适用性。通过引入广义参量F0=α/L2,分别就F0》1和F0《1情况给出了重构近似表达式,并对满足F0》1条件的回推算法进行了数值模拟验证。数值结果表明,两种背光面边界条件下回推得到的激光束时空分布与原始激光束达到了很好的一致,但存在一与靶材傅里叶数相关的最小起始回推时间τ0。成果可用于强激光远场参量测量设备的研制。     

A New Synthetical Model of High-Power Pulsed Laser Ablation

We develop a new synthetical model of high-power pulsed laser ablation, which considers the dynamic absorptance, vaporization, and plasma shielding. And the corresponding heat conduction equations with the initial and boundary conditions are given. The numerical solutions are obtained under the reasonable technical parameter conditions by taking YBa2CusO7 target for example. The space-dependence and time-dependence of temperature in target at a certain laser fluence are presented, then, the transmitted intensity through plasma plume, space-dependence of temperature and ablation rate for different laser fluences are significantly analyzed. As a result, the satisfactorily good agreement between our numerical results and experimental results indicates that the influences of the dynamic absorptance, vaporization, and plasma shielding cannot be neglected. Taking all the three mechanisms above simultaneously into account for the first time, we cause the present model to be more practical.     

A New Synthetical Model of High-Power Pulsed Laser Ablation

We develop a new synthetical model of high-power pulsed laser ablation, which considers the dynamic absorptance, vaporization, and plasma shielding. And the corresponding heat conduction equations with the initial and boundary conditions are given. The numerical solutions are obtained under the reasonable technical parameter conditions by taking YBa₂Cu₃O₇ target for example. The space-dependence and time-dependence of temperature in target at a certain laser fluence are presented, then, the transmitted intensity through plasma plume, space-dependence of temperature and ablation rate for different laser fluences are significantly analyzed. As a result, the satisfactorily good agreement between our numerical results and experimental results indicates that the influences of the dynamic absorptance, vaporization, and plasma shielding cannot be neglected. Taking all the three mechanisms above simultaneously into account for the first time, we cause the present model to be more practical.     

New theory of undercooling during rapid solidification: application to pulsed laser heated silicon

A new theory of undercooling has been developed based on the Fickian form of heat flux expressed in terms of a gradient in enthalpy density. It is shown that heat diffusion is more fundamental than Fourier’s law of heat conduction. During the solid–liquid phase change, diffusion requires continuity of the enthalpy density across the phase-change boundary, which has two important consequences. First, the calculated melt-depth during rapid heating is reduced, and second, during cooling the rate of loss of heat is independent of both the rate of release of latent heat and the temperature of the interphase layer. The cause of undercooling is diffusive heat loss without recrystallisation, which simply causes the temperature of the liquid to drop. Both the nature of melting and classical nucleation have been examined and shown to support diffusion over conduction. In particular, it is established that the literature supports a model of melting in which phase fluctuations at the melting point occur, and that these phase fluctuations must inevitably lead to thermal transport at uniform temperature. Hitherto unrecognized inconsistencies in classical nucleation theory also support the diffusive framework. The model is applied to pulsed laser melting and amorphisation of (111) silicon. PACS  64.70.Dv; 66.30.Xj; 68.18.Jk     

Pulsed laser heating calculations incorporating vapourization

We present a scheme for solution of the heat flow equation in one-dimension incorporating melting and vapourization produced under pulsed laser irradiation. The method can be applied to pure materials as well as multilayered structures such as deposited films. The variation of physical properties with temperature can be easily taken into account. Results of calculation are presented for aluminium and for chromium and antimony layers deposited on aluminium. As a consequence of excessive vapourization at high energy densities, the melt depth and the melt duration do not increase beyond a certain limit. The resolidification front velocity is strongly dependent on energy density and can be controlled in an experiment by a careful choice of laser parameters. Some recent experimental data on laser treated chromium films are discussed in light of our calculations.     

高能激光武器目标打击的多物理场系统仿真

由于高能激光武器破坏目标的瞬时性、反应的复杂性以及测试成本高昂,使得通过实验评估激光武器的毁伤威力具有很大难度,因此,通过数值模拟的方法对其毁伤威力进行建模仿真可以有效评估其攻防性能。在计算温度场时考虑了相变情况下材料导热率的变化以及材料熔化时熔化潜热对温度场的影响,建立了相应的位移场、应力场数理模型并进行模拟。将多物理场模型整合到仿真系统中,对激光武器打击目标的过程进行了系统仿真,模拟出不同工况下高能激光武器对目标的毁伤效果。仿真结果表明,激光辐照Al材料3.01 s时,激光实时功率密度为0.930 8 W/cm2,材料外壁面温度达到600℃,内壁面温度为352.522℃,此时材料表面刚刚达到熔化,但其所受应力已使材料发生脆性断裂,材料已被破坏。     

Emission properties of laser ablation of SnO2: Sb transparent conducting film and KTiOPO4 crystal

Optical emission spectra of Nd:YAG laser ablation of KTiOPO₄ (KTP) crystal and SnO₂:Sb transparent conducting thin film were recorded and analyzed in vacuum and in air. The integral intensities of spectral lines from laser-ablated KTP crystal were obtained as functions of distance from the target surface and laser power density in vacuum and in air. The ambient gas effects on pulsed laser ablation of target were discussed. We also performed laser ablation of SnO₂:Sb transparent conducting thin film in air and the electron temperature and full-width at half-maximum (FWHM) of atomic and ionic spectral lines in the plasma were quantified using Boltzmann plot method and Lorentzian fit, respectively. Integral intensities of atomic and ionic Sn spectral lines were also obtained as functions of distance from the target surface and laser irradiance. The intensity ratio of ionic and atomic Sn spectral lines as a function of laser power density was got which gives some information about the variation of ionization ratio with laser irradiance in the plasma produced by high-power laser.