Electrical instability of LiCu<Subscript>2</Subscript>O<Subscript>2</Subscript> crystals

The temperature behavior of I-U curves and the field and temperature dependences of the electrical resistivity and dielectric permittivity of crystals of the LiCu₂O₂ phase have been studied. It was established that the crystals belong to p-type semiconductors and that their static resistivity in the range 80–260 K follows the Mott law ρ=Aexp(T₀/T)^1/4 describing variable-range hopping over localized states. At comparatively low electric fields, the crystals exhibit threshold switching and characteristic S-shaped I-U curves containing a region of negative differential resistivity. In the critical voltage region, jumps in the conductivity and dielectric permittivity are observed. Possible mechanisms of the disorder and electrical instability in these crystals are discussed.     

Dielectric properties of (K<Subscript>0.5</Subscript>Na<Subscript>0.5</Subscript>)(Nb<Subscript>0.93</Subscript>Sb<Subscript>0.07</Subscript>)O<Subscript>3</Subscript> ferroelectric ceramics modified with BaTiO<Subscript>3</Subscript>

Processes of the polarization and repolarization of ferroelectric ceramics based on potassium sodium niobate in the region of infralow frequencies are discussed. The effect aging and subsequent annealing in a strong alternating electric field have on the nonlinearity of the dielectric response of a sample at different temperatures is determined.     

Dielectric and optical properties of Pb(Mg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)<Subscript>0.8</Subscript>Ti<Subscript>0.2</Subscript>O<Subscript>3</Subscript> (PMNT-0.2) ferroelectric relaxor single crystals

The dielectric and optical (optical transmission, small-angle light scattering, birefringence) properties of PMNT-0.2 single crystals and their variation induced by a dc electric field have been studied. The birefringence was found to increase anomalously at the transition from the rhombohedral ferroelectric to the inhomogeneous relaxor phase (the spontaneous ferroelectric transition temperature T_sp). Below T_sp, the dielectric and optical properties were observed to exhibit anomalies originating from reorientation and growth of domains in size. Unlike ferroelectric relaxors of the type of PbB′_1/3B′_2/3O₃ and PbB′_1/2B′_1/2O₃, in PMNT-0.2 neither induction of the ferroelectric phase by an electric field nor thermally stimulated destruction of the ferroelectric state occurs through the percolation mechanism (i.e., they are not accompanied by anomalously narrow maxima in small-angle light scattering). This is attributed to the inhomogeneous structure of the relaxor phase, as a result of which the phase transition does not take place simultaneously in various regions of the crystal.     

Response of the capacitance and dielectric loss of the SrRuO<Subscript>3</Subscript>/SrTiO<Subscript>3</Subscript>/SrRuO<Subscript>3</Subscript> film heterostructures to variations in temperature and electric field

Three-layer epitaxial heterostructures with a 750-nm-thick intermediate strontium titanate layer between two strontium ruthenate conductive thin-film electrodes have been grown by laser deposition. Photolithography and ion etching have been used to form film parallel-plate capacitors based on the grown heterostructures. The capacitance (C) and dielectric loss tangent (tanδ) of the parallel-plate capacitors have been measured in the temperature range T = 4.2–300 K at an applied bias voltage of up to ±2.5 V and without it. At T > 100 K, the temperature dependence of the dielectric permittivity (ε) of the SrTiO₃ intermediate layer is well approximated by the Curie–Weiss law taking into account the capacitance induced by the penetration of an electric field into the oxide electrodes. At T ≈ 20 K, the dielectric permittivity ε of the SrTiO₃ intermediate layer decreases by approximately 20% in an electric field of 25 kV/cm. The dielectric loss tangent of the film capacitor heterostructures decreases monotonically with a decrease in the temperature in the range from 300 to 80 K and almost does not depend on the electric field strength. However, in the range from 80 to 4.2 K, the dielectric loss tangent increases nonmonotonically (abruptly) with a decrease in the temperature and decreases significantly in an applied electric field.     

Relaxation phenomena in TlGa<Subscript>0.99</Subscript>Fe<Subscript>0.01</Subscript>Se<Subscript>2</Subscript> single crystals

The relaxation electronic phenomena occurring in TlGa_0.99Fe_0.01Se₂ single crystals in an external dc electric field are investigated. It is established that these phenomena are caused by electric charges accumulated in the single crystals. The charge relaxation at different electric field strengths and temperatures, the hysteresis of the current-voltage characteristic, and the electric charge accumulated in the TlGa_0.99Fe_0.01Se₂ single crystals are consistent with the relay-race mechanism of transfer of a charge generated at deep-lying energy levels in the band gap due to the injection of charge carriers from the electric contact into the crystal. The parameters characterizing the electronic phenomena observed in the TlGa_0.99Fe_0.01Se₂ single crystals are determined to be as follows: the effective mobility of charge carriers transferred by deep-lying centers μ_f=5.6×10^?2 cm²/(V s) at 300 K and the activation energy of charge transfer ΔE=0.54 eV, the contact capacitance of the sample C _c =5×10^?8 F, the localization length of charge carriers in the crystal d _c =1.17×10^?6 cm, the electric charge time constant of the contact τ=15 s, the time a charge carrier takes to travel through the sample t _t =1.8×10^?3 s, and the activation energy of traps responsible for charge relaxation ΔE _σ = ΔE _Q = 0.58 eV.     

The giant dielectric tunability effect in bulk Y<Subscript>2</Subscript>NiMnO<Subscript>6</Subscript> around room temperature

The effect of applied dc bias electric field on dielectric permittivity in bulk Y₂NiMnO₆ is investigated in this paper. It is found that a small bias field of 40 V/cm can greatly reduce the dielectric permittivity around the room temperature, compared to the much larger electric field that is required for conventional ferroelectric materials. The observed giant dielectric tunability is retained over a broad range of around room temperature and is most likely related to the charge ordering of Ni²⁺ and Mn⁴⁺ ions. This may further confirm the existence of electronic ferroelectricity in Y₂NiMnO₆.     

Evolution of the optical properties of Pb<Subscript>0.94</Subscript>Ba<Subscript>0.06</Subscript>Sc<Subscript>0.5</Subscript>Nb<Subscript>0.5</Subscript>O<Subscript>3</Subscript> (PBSN-6) solid solution single crystals caused by a static electric field

The electric-field-induced variation of the optical properties (small-angle light scattering, birefringence) of PBSN-6 solid solutions was studied. It was found that in the absence of an electric field, the cubic nonpolar matrix contains, at temperatures below the dielectric permittivity maximum, spontaneously polarized regions of the ferroelectric phase not less than 10⁴ Å in size. It was shown that a weak electric field (～0.4 kV/cm) is capable of inducing a kinetic phase transition to the ferroelectric state, with the temperature of this transformation depending on the sample heating rate. The destruction of the induced state was accompanied by a sharp peak in the temperature dependence of the small-angle light scattering intensity (indicating the percolation nature of the transition) and was independent of the sample heating rate. The boundaries of stability of the induced state in various modes of application of an external electric field were determined, and the E-T phase diagram was constructed.     

Colossal magnetodielectric effect in SmFe<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript> multiferroic

The colossal (more than threefold) decrease in the dielectric constant ɛ in the easy-plane SmFe₃(BO₃)₄ ferroborate in a magnetic field of ∼5 kOe applied in the basal ab plane of the crystal has been found. A close relation of this effect to anomalies in the field dependence of the electric polarization has been established. It has been shown that this magnetodielectric effect is due to the contribution to ɛ from the electric susceptibility, which is related to the rotation of spins in the ab plane, arises in the region of the antiferromagnetic ordering T < T _N = 33 K, and is suppressed by the magnetic field. A theoretical model describing the main features of the behavior of ɛ and electric polarization in the magnetic field has been proposed, taking into account the additional anisotropy in the basal plane induced by the magnetoelastic stresses.     

Divalent rare-earth ions in LaF<Subscript>3</Subscript> crystals

The optical spectra and electric conductivity of LaF₃ crystals doped with 0.01, 0.1, and 0.3 mol % YbF₃, where Yb was partly or completely recharged to the divalent state, are studied. The long-wavelength absorption band of 370 nm is caused by electrons transitioning from state 4f ¹⁴ to the level of anion vacancies. The remaining bands at 300–190 nm are caused by 4f ¹⁴–5d ¹4f ¹³ transitions in Yb²⁺. The bulk electric conductivity and peaks of the dielectric losses of LaF₃–Yb²⁺ crystals are caused by Yb²⁺–anion vacancy dipoles. The activation energy of the reorientation of Yb dipoles is 0.58 eV. The optical and dielectric properties of Yb²⁺ centers are compared to those of Sm²⁺ and Eu²⁺ centers studied earlier in LaF₃ crystals.     

Acoustogyration diffraction of optical waves: case of SiO<Subscript>2</Subscript> and TeO<Subscript>2</Subscript> crystals

Interaction of acoustic and light waves with accounting for elastooptic and elastogyration effects is theoretically described. Collinear acoustogyration diffraction in quartz and paratellurite crystals is experimentally investigated and thoroughly analyzed. Piezogyration effect is experimentally studied for TeO₂ crystals. The acoustogyration efficiency and the acoustogyration figure of merit calculated for a number of crystals (GaAs, TeO₂ and SiO₂) are shown to be too small for experimental detection. On the other hand, we demonstrate that the light diffraction at periodical distribution of the imaginary part of dielectric permittivity related to the piezogyration effect should, in principle, be observed for the case of interaction of optical waves with enantiomorphous ferroelastic domain structure and in cholesteric liquid crystals.     

Phase transition in Bi<Subscript>8</Subscript>Fe<Subscript>6</Subscript>Ti<Subscript>3</Subscript>O<Subscript>27</Subscript> multiferroic ceramics

The polycrystalline Bi₈Fe₆Ti₃O₂₇ compound was prepared by a high-temperature solid-state reaction technique. Preliminary structural analysis by X-ray diffraction (XRD) confirms the formation of a single-phase compound in an orthorhombic crystal system at room temperature. The elemental content of the compound was analyzed by EDAX microanalysis. Microstructural analysis by scanning electron microscopy (SEM) shows that the compound has well defined grains, which are distributed uniformly throughout the surface of the pellet sample. Detailed studies of temperature-dependent dielectric response at various frequencies show dielectric anomalies at 380, 389 and 403°C for 10 kHz, 100 kHz, and 1 MHz respectively. The hysteresis loop observed by applying an electric field of 12 kV/cm on the poled sample with smaller remanent polarization supports the existence of ferroelectricity in this material. The value of d₃₃ of the compound was found to be 19 pC/N.      

Optical studies of delayed relaxation in Pb<Subscript>0.94</Subscript>Ba<Subscript>0.06</Subscript>Sc<Subscript>0.5</Subscript>Nb<Subscript>0.5</Subscript>O<Subscript>3</Subscript> (PBSN-6) solid solutions

The temperature dependences of the permittivity, birefringence, optical transmittance, and small-angle light scattering and their variations with time are studied for single crystals of the Pb_0.94Ba_0.06Sc_0.5Nb_0.5O₃ relaxor (PBSN-6) in the heterophase region of coexistence of different phases. It is shown that an electric field induces a phase transition to the ferroelectric state, which manifests itself within some time (delay time τ) after application of the electric field to the crystal. The observed dependence of the temperature of this transition on the heating rate of the sample and the changes in the birefringence and small-angle light scattering intensity with time confirm the kinetic character of the induced transition. Temperature dependences of the delay time τ for different electric fields are constructed. It is revealed that, at low temperatures, the delay time τ decreases with increasing temperature. This agrees with the behavior of τ in classical relaxors. At the Vogel-Fulcher temperature, however, one observes that dτ/dT reverses sign and τ increasing as the temperature continues to increase. This anomalous behavior of τ in the heterophase region is accounted for by the coexistence of the cubic relaxor and rhombohedral macrodomain phases.     

Magnetic and electric properties of Eu<Subscript>0.62</Subscript>Bi<Subscript>0.38</Subscript>MnO<Subscript>3</Subscript> and Eu<Subscript>0.53</Subscript>Bi<Subscript>0.32</Subscript>Sr<Subscript>0.15</Subscript>MnO<Subscript>3</Subscript> crystals

Single crystals of Eu_0.62Bi_0.38MnO₃ and Eu_0.53Bi_0.32Sr_0.15MnO₃ solid solutions crystallizing in an orthorhombically distorted perovskite structure were prepared. At temperatures above 120 K, Eu_0.62Bi_0.38MnO₃ exhibits the properties of structural glass while remaining a dielectric at all temperatures. There is no long-range magnetic order in this compound. Eu_0.53Bi_0.32Sr_0.15MnO₃ behaves as a semiconductor above 120 K and exhibits a jump in conductivity at T = 175 K associated with a metal-insulator transition occurring within limited regions of the crystal. In these regions, there appears a ferromagnetic moment (due to double exchange mediated by charge carriers) and local electric polarization.     

Effect of organic dyes on the dielectric properties of KH<Subscript>2</Subscript>PO<Subscript>4</Subscript> crystals

The effect of organic dyes on the dielectric properties of KH₂PO₄ (KDP) crystals is studied over a wide range of temperatures. The dielectric properties of KDP crystals doped with molecules of the Chicago Sky Blue and Amaranth organic dyes are investigated for the first time. The dye molecules can be incorporated into the crystal lattice of KDP and selectively paint the pyramidal growth sectors of the crystal. The influence of dye organic impurities on the domain contribution to the permittivity is analyzed with due regard for the sectoral crystal structure. It is demonstrated that, upon doping of KDP crystals with organic dyes, the blocking effect of background impurities on domain walls is substantially weakened in the prismatic growth sector of the crystal in the polar phase. This leads to a noticeable change in the dielectric properties, specifically to an increase in the domain contribution to the permittivity of the crystal.     

Infralow-frequency dielectric response of Pb<Subscript>3</Subscript>O<Subscript>4</Subscript> polycrystalline layers

This paper reports on the results of the investigation into the frequency dispersion of the capacitance and dielectric loss in capacitor structures based on red lead Pb₃O₄. It is established that, in the range of frequencies f = 1.50 × 10^?3?0.25 Hz, the capacitance decreases and the dielectric loss tangent increases with increasing frequency. The frequency dependence of the electrical conductivity in an alternating-current electric field indicates the applicability of the hopping model of charge transfer under normal conditions. The role of a lone electron pair of Pb²⁺ cations in dielectric polarization is discussed.     

Electromechanical properties of Pb<Subscript>3</Subscript>Ga<Subscript>2</Subscript>Ge<Subscript>4</Subscript>O<Subscript>14</Subscript> piezoelectric crystals grown from solution in a melt

Single crystals of lead gallium germanate Pb₃Ga₂Ge₄O₁₄ are grown from their own solution melts. The propagation of bulk acoustic waves is investigated, and the elastic, piezoelectric, and dielectric constants are calculated. The temperature dependences of the dielectric constants of this compound are analyzed.     

Nonlinear dielectric response of epitaxial Ba<Subscript>0.6</Subscript>Sr<Subscript>0.4</Subscript> TiO<Subscript> 3</Subscript> thin films

Based on Landau-Devonshire (LD)-type phenomenological thermodynamic theory, the electric field dependence of the dielectric properties of tetragonal single-domain barium strontium titanate(Ba_1-xSr_xTiO₃) films on cubic substrates is theoretically investigated by taking into account the high order terms of the polarization. At room temperature, the nonlinear dielectric responses of epitaxial Ba_0.6Sr_0.4TiO₃ films are provided by adjusting the film thickness and growth temperature. The strong nonlinearity of relative dielectric constant and pyroelectric coefficient are attained around critical film thickness on MgO (69 nm) and LaAlO₃ (132 nm) substrates or critical growth temperature on MgO (337 °C) substrate with respect to epitaxy-induced lattice misfit and thermal stresses during deposition. This can be explained that small compressive stresses are effective to support high nonlinearity of dielectric constant and pyroelectric coefficient for Ba_0.6Sr_0.4TiO₃ films irrespective of whether they are on compressive substrate or tensile substrate. It is also predicted that a large tunability may be achieved by altering processing conditions, such as the film thickness and growth temperature for different substrates. Our theoretical results are in good agreement with the experimental data reported in literature.     

Intrinsic metastability of low doped manganites: La<Subscript>0.8</Subscript>Ca<Subscript>0.2</Subscript>MnO<Subscript>3</Subscript> case

Transport properties of phase separated La_0.8Ca_0.2MnO₃ crystals in the aged highly resistive metastable state were studied. It was found that the coexistence of different ferromagnetic phases at low temperatures is sensitive to electric current/field. In a contrast with the previously studied low resistivity metastable states the high resistivity state exhibits positive magnetoresistance and significant current dependence of the resistivity even at temperatures much higher than the Curie temperature. Application of current pulses results in appearance of zero bias anomaly in the current dependent conductivity. Similarly to the low resistivity metastable states the memory of the resistivity can be erased only after heating of the sample to T_e ≈360 K. After one year storage at room temperature the La_0.8Ca_0.2MnO₃ samples show clear signatures of aging. The aged samples spontaneously evolute towards high resistivity states. The results are discussed in the context of a coexistence of two ferromagnetic phases with different orbital order and different conductivity. The metallic ferromagnetic phase seems to be less stable giving rise to the experimentally observed electric field effects and aging.     

Specificity of magnetoelectric effects in a new GdMnO<Subscript>3</Subscript> magnetic ferroelectric

A complex study of the magnetic, electric, magnetoelectric, and magnetoelastic properties of GdMnO₃ single crystals has been performed in the low-temperature region in strong pulsed magnetic fields up to 200 kOe. An anomaly of the dielectric constant along the a axis of a crystal has been found at 20 K, where a transition from an incommensurate modulated phase to a canted antiferromagnetic phase, as well as electric polarization along the a and b axes of the crystal induced by the magnetic field H‖ b (H_cr ～ 40 kOe), is observed. Upon cooling the crystal in an electric field, the magnetic-field-induced electric polarization changes its sign depending on the sign of the electric field. The occurrence of the electric polarization is accompanied by anisotropic magnetostriction, which points to a correlation between the magnetoelectric and magnetoelastic properties. Based on these results, it has been stated that GdMnO₃ belongs to a new family of magnetoelectric materials with the perovskite structure.     

Formation of nanodomain ensembles during polarization reversal in Sr<Subscript>0.61</Subscript>Ba<Subscript>0.39</Subscript>Nb<Subscript>2</Subscript>O<Subscript>6</Subscript>: Ce single crystals

The results of the study of nano- and microdomain structure evolution in single crystals of relaxor ferroelectric strontium barium niobate Sr_0.61Ba_0.39Nb₂O₆ doped by cerium are presented. It was shown that the initial nanodomain structure represents a self-similar three-dimensional maze. The fractal dimension and average period were revealed. It was demonstrated that application of series of alternating electric field pulses makes it possible to produce a single-domain state in the surface layer. The features of the growth and “merging,” as well as the shape of ensembles of isolated nanodomains formed during switching from the single-domain state, were investigated. The formation of the nanodomain ensembles was considered as a result of the self-organized discrete switching controlled by determined nucleation.