Realizing 20 Gbits OTDM Transmission over 50km Truewave Fiber with Dispersion Compensation

Ｉｎｔｒｏｄｕｃｔｉｏｎ　　Ｔｈｅｒｅａｒｅｔｗｏｍｅｔｈｏｄｓｔｏｅｎｈａｎｃｅｔｈｅｃａｐａｃｉｔｙｏｆｔｈｅｔｒａｎｓｍｉｓｓｉｏｎｓｙｓｔｅｍ：ｏｐｔｉｃａｌｔｉｍｅｄｉｖｉｓｉｏｎｍｕｌｔｉｐｌｅｘｉｎｇ（ＯＴＤＭ）ａｎｄｏｐｔｉｃａｌｗａｖｅｌｅｎｇｔｈｄｉｖｉｓｉｏｎｍｕｌｔｉｐｌｅｘｉｎｇ（ＷＤＭ）．ＯＴＤＭｉｓｂｅｉｎｇｗｉｄｅｌｙｒｅｓｅａｒｃｈｅｄｂｅｃａｕｓｅｏｆｓｏｍｅｖｉｒｔｕｅｓｉｎｏｐｔｉｃａｌｎｅｔｗｏｒｋｓ［１～４］．ＯＴＤＭｗｉｔｈｔｈｅｓｉｎｇｌｅｃｈａｎ…     

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１ＴｈｅｏｒｙｏｆＢｏｓｅ－Ｅｉｎｓｔｅｉｎｃｏｎｄｅｎｓａｔｉｏｎｉｎｔｒａｐｐｅｄｇａｓｅｓ（ＦｒａｎｃｏＤａｌｆｏｖｏ,ＳｔｅｆａｎｏＧｉｏｒｇｉｎｉ,ＬｅｖＰ．Ｐｉｔａｅｖｓｋｉｉｅｔａｌ．Ｒｅｖ．Ｍｏｄ．Ｐｈｙｓ．,１９９９,７１：４６３—５１２）２Ｔｏｐ－ｑｕａｒｋｃｏｎｄｅｎｓａｔｉｏｎ（Ｇ．Ｃｖｅｔｉｃ．Ｒｅｖ．Ｍｏｄ．Ｐｈｙｓ．,１９９９,７１：５１３—５７４）３ＰｒｅｃｉｓｉｏｎｔｅｓｔｓｏｆｔｈｅｅｌｅｃｔｒｏｗｅａｋｉｎｔｅｒａｃｔｉｏｎａｔｔｈｅＺｐｏｌｅ（Ｍ．Ｍａｒｔ…     

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１Ｇａｍｍａｒａｙａｓｔｒｏｎｏｍｙａｔｈｉｇｈｅｎｅｒｇｉｅｓ（Ｃ．Ｍ．Ｈｏｆｆｍａｎ,Ｃ．Ｓｉｎｎｉｓ,Ｐ．Ｆｌｅｕｒｙｅｔａｌ．Ｒｅｖ．Ｍｏｄ．Ｐｈｙｓ．,１９９９,７１：８９７—９３６）２ＳｅａｒｃｈｅｓｆｏｒｓｕｐｅｒｓｙｍｍｅｔｒｉｃｐａｒｔｉｃｌｅｓａｔｔｈｅＴｅｖａｔｒｏｎｃｏｌｌｉｄｅｒ（Ｍ．Ｃａｒｅｎａ,Ｒ．Ｃｕｌｂｅｒｔｓｏｎ,Ｈ．Ｆｒｉｓｃｈｅｔａｌ．Ｒｅｖ．Ｍｏｄ．Ｐｈｙｓ．,１９９９,７１：９３７—９８１）３Ｂｒａｎｅｄｙｎａｍｉｃｓａｎｄｇａｕｇｅｔｈｅｏｒｙ（Ａ…     

Software Method for the Extension of the STM/AFM Measuring Range

１ＩｎｔｒｏｄｕｃｔｉｏｎＳｃａｎｎｉｎｇｔｕｎｎｅｌｉｎｇｍｉｃｒｏｓｃｏｐｙ（ＳＴＭ）ａｎｄａｔｏｍｉｃｆｏｒｃｅｍｉｃｒｏｓｃｏｐｙ（ＡＦＭ）ａｒｅｉｎｓｔｒｕｍｅｎｔｓｗｉｔｈｕｌｔｒａｈｉｇｈｒｅｓｏｌｕｔｉｏｎｉｎｖｅｎｔｅｄｉｎ１９８...     

Modulation Instability in Non Kerr-like Optical Fibers near the Zero Dispersion Point

1　Ｉｎｔｒｏｄｕｃｔｉｏｎ　　Ｍｏｄｕｌａｔｉｏｎｉｎｓｔａｂｉｌｉｔｙ（ＭＩ）ｉｎｓｉｌｉｃａｂａｓｅｄｇｌａｓｓｆｉｂｅｒ，ｆｉｒｓｔｐｒｏｐｏｓｅｄｂｙＨａｓｅｇａｗａ［1］，ｒｅｆｅｒｓｔｏａｐｒｏｃｅｓｓｉｎｗｈｉｃｈａｃｏｎｔｉｎｕｏｕｓ...     

PhysicsandChemistryinLaser－TrappedSingleMicroparticlesStudiedbyLightScattering

ＰｈｙｓｉｃｓａｎｄＣｈｅｍｉｓｔｒｙｉｎＬａｓｅｒ－ＴｒａｐｐｅｄＳｉｎｇｌｅＭｉｃｒｏｐａｒｔｉｃｌｅｓＳｔｕｄｉｅｄｂｙＬｉｇｈｔＳｃａｔｔｅｒｉｎｇＷ．Ｋｉｅｆｅｒ；Ｍ．Ｌａｎｋｅｒｓ；Ｊ．Ｐｏｐｐ；Ｍ．ＴｒｕｎｋａｎｄＥ．Ｕｒｌａｕｂ（Ｉｎ...     

Multiple photon laser photochemistry

Ｍｕｌｔｉｐｌｅｐｈｏｔｏｎｌａｓｅｒｐｈｏｔｏｃｈｅｍｉｓｔｒｙ￥Ｖ．Ｓ．Ｌｅｔｏｋｈｏｖ（ＩｎｓｔｉｔｕｔｅｏｆＳｐｅｃｔｒｏｓｃｏｐｙ，ＵＳＳＲＡｃａｄｅｍｙｏｆＳｃｉｅｎｃｅｓ，Ｔｒｏｉｔｚｋ，ＭｏｓｃｏｗＲｅｇｉｏｎ，１４２０９２，Ｒｕｓｓ...     

Saturation Effects in Mode competition Effects of a Two mode Laser with Multiplicative Noise

１ＩｎｔｒｏｄｕｃｔｉｏｎＴｗｏｍｏｄｅｌａｓｅｒｓ（ＴＭＬ）ｈａｖｅｂｅｎｔｈｅｓｕｂｊｅｃｔｏｆｅｘｔｅｎｓｉｖｅｉｎｔｅｒｅｓｔｉｎｒｅｃｅｎｔｙｅａｒｓ．Ｍｏｄｅｃｏｍｐｏｔｉｔｉｏｎｅｆｅｃｔｉｓｏｎｅｏｆｔｈｅｉｍｐｏｒｔａｎｔｐｒｏ...     

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１　ＮｏｂｅｌＬｅｃｔｕｒｅ：Ｅｌｅｃｔｒｏｎｉｃｓｔｒｕｃｔｕｒｅｏｆｍａｔｔｅｒｗａｖｅｆｕｎｃｔｉｏｎｓａｎｄｄｅｎｓｉｔｙｆｕｎｃｔｉｏｎａｌｓ（Ｗ．Ｋｏｈｎ．Ｒｅｖ．Ｍｏｄ．Ｐｈｙｓ．,１９９９,７１：１２５３—１２６６）２　ＮｏｂｅｌＬｅｃｔｕｒｅ：Ｑｕａｎｔｕｍｃｈｅｍｉｃａｌｍｏｄｅｌｓ（ＪｏｈｎＡ．Ｐｏｐｌｅ．Ｒｅｖ．Ｍｏｄ．Ｐｈｙｓ．,１９９９,７１：１２６７—１２７４）３　ＨＥＲＡｃｏｌｌｉｄｅｒｐｈｙｓｉｃｓ（ＨａｌｉｎａＡｂｒａｍｏｗｉｃｚ,ＡｌｌｅｎＣ．Ｃａｌｄｗｅｌ…     

Mode competition Effects of a Two Mode Laser with Multiplicative Colored Noise

１ＩｎｔｒｏｄｕｃｔｉｏｎＭｏｄｅｃｏｍｐｅｔｉｔｉｏｎｅｆｅｃｔｓａｒｅｏｎｅｏｆｔｈｅｉｍｐｏｒｔａｎｔｐｒｏｂｌｅｍｏｆｔｗｏｍｏｄｅｌａｓｅｒ（ＴＭＬ）．Ｉｎ１９６０ｓ,ｔｈｅｉｎｖｅｓｔｉｇａｔｉｏｎｓｏｆｍｏｄｅｃｏｍｐｅｔｉｔｉｏ...     

半导体超晶格的多声子拉曼散射研究

半导体超晶格的多声子拉曼散射研究／张树霖，杨昌黎，侯勇田（北京大学物理系北京１００８７１）彭中灵，李杰，袁诗鑫（中科院上海技物所上海２０００８３）Ｒ．Ｐｌａｎｅｌ（ＭｉｃｒｏｓｔｒｕｃｔｕｒｅｓａｎｄＭｉｃｒｏｅｌｅｃｔｒｏｎｉｃｓＬａｂｏｒａｔｏｒ...     

GaAs/AlAs超晶格的近共振喇曼散射研究

本文介绍GaAs/AlAs超晶格的室温近共振喇曼散射测量结果。由于超晶格中Fr?hlich相互作用的共振增强效应,GaAs LO声子偶模的散射得到了很大的增强。和前人的结果一样,在偏振谱我们观察到了偶模。但和前人的结果不同,在退偏振谱中我们观察到的是奇模,而不是偶模。从而证明了在近共振条件下LO声子限制模仍遵从与非共振时一样的选择定则。二级喇曼散射实验结果表明,在偏振谱中二级谱是由两个偶模组合而成,而在退偏振谱中的二级谱与前人的结果不同,由一个奇模与一个偶模组合而成。上述结果与最近提出的黄朱模型的预言是一 关键词：     

用拉曼光谱测量离子注入引起的晶格应变

 对于10个周期的AlAs/GaAs超晶格和25个周期的GaAs/Ga0.92In0.08As超晶格,在室温下进行0.28 MeV的Zn＋注入,注入剂量为5×10¹³~5×10¹⁴ cm^-2。通过拉曼光谱测量,定量地分析了由于离子注入所引起的晶格内应变。实验结果表明：在所选用的注入剂量下,由于离子注入引起的应变小于体材料GaAs的最大非驰豫应变值0.038,说明该注入条件下,注入区的结晶态仍然保持得比较好。在较高注入剂量下应变达到饱和,说明缺陷的产生和复合达到了平衡,从而形成了均衡的应变场分布。     

自发有序Ga_（0．5）In_（0．5）P合金的拉曼光谱研究

自发有序Ｇａ＿（０．５）Ｉｎ＿（０．５）Ｐ合金的拉曼光谱研究李国华，刘振先，韩和相，汪兆平，董建荣（中国科学院半导体研究所，半导体扭晶格国家重点实验室北京１０００８３）（中国科学院半导体研究所，半导体材料科学实验室北京１０００８３））ＲａｍａｎＳｃａ...     

用Nd：YAG1064nm激发的FT－SERS技术研究鸟嘌呤分子

用Ｎｄ：ＹＡＧ１０６４ｎｍ激发的ＦＴ－ＳＥＲＳ技术研究鸟嘌呤分子张崇起，胡凤霞，李勤（首都师范大学物理系，都师范大学综合所，都师范大学物理系北京１０００３７）ＮＩＲ－ＦＴ－ＳＥＲＳｏｆＧｕａｎｉｎｅｉｎＳｉｌｖｅｒＣｏｌｌｏｉｄｓ￥ＺｈａｎｇＣｈｏｎ...     

Experimental analysis of resonant tunneling transit time using high-frequency characteristics of resonant tunneling transistors

We systematically estimate the resonant tunneling transit time from the high-frequency characteristics of resonant tunneling transistors. It is found that the transit time across an InGaAs/InAlAs resonant tunneling structure is more than one order of magnitude shorter than that for GaAs/AlAs with the same barrier layer thickness. In addition, the obtained times agree reasonably well with calculated phase time. It is probably the elastic resonance width and not the inelastic scattering effect that mainly determines the resonant tunneling transit time.     

Modifying electron-phonon scattering rates in semiconductor quantum wells with thin AlAs layers

We have studied theoretically the electron-phonon scattering rates in GaAs/AlAs quantum wells which have additional thin AlAs layers in them using the dielectric continuum approach for the phonons. The confined and interface phonon modes and the intersubband electron phonon scattering rates of these structures have been calculated. The system with an additional AlAs layer is found to have intersubband electron scattering rates which are increased modestly as compared to those for the corresponding quantum well. These results show that scattering rates in general are expected to depend only weakly on the effects of system structure on the optical phonon spectra.     

一种高度枝化的聚脂纳米微粒的合成与光散射表征

一种高度枝化的聚脂纳米微粒的合成与光散射表征马荣久，周博，沈家骢，吴奇，吴加辉，陈锦幌（吉林大学高分子研究所长春１３００２３香港中文大学化学系）ＳｙｎｔｈｅｓｉｓａｎｄＣｈａｒａｃｔｅｒｉｚａｔｉｏｎｏｆＡＮｏｖｅｌＨｉｇｈｌｙＢｒａｎｃｈｅｄＰｏｌ...     

The photocurrent of resonant tunneling diode controlled by the charging effects of quantum dots

We experimentally studied the photocurrent of AlAs/GaAs/AlAs double barrier resonant tunneling diode (RTD), which is composed of an InAs layer of self-assembled quantum-dots on top of AlAs barrier layer. It is found that the charging InAs quantum dots can effectively modulate the carrier transport properties of the RTD. Moreover, we also found that the resonant tunneling current through a single energy level of an individual quantum dot is extremely sensitive to the photo-excited holes bound nearby the dot, and the presence of the holes lowers the electrostatic energy of the quantum dot state. In addition, it is also observed that the photocurrent behaves like step way with the individual photon pulse excitation when the illumination is low enough. The experiment results well demonstrated the quantum amplified characteristics of the device.     

Raman scattering from confined LO phonons and dispersion relation in GaAs/AlAs superlattices

The Raman scattering from both GaAs and AlAs confined LO phonons for several GaAs/AlAs superlattices is presented. The GaAs confined LO phonons were observed for two narrow GaAs layer samples at room temperature. The frequencies of observed phonons fit fairly well with the theoretical dispersion curves.