Thermoluminescence of B2O3-Li2O glass system doped with MgO

Lithium borate (LiB) glasses in the system (100−x)B₂O₃-xLi₂O with x=20, 30, 40, 50, 60 and 70 mol% were prepared. The glasses were doped with different concentrations of the order of 10⁻¹, 10⁻², 10⁻³, 10⁻⁴ and 10⁻⁵ of MgO and their thermoluminescent (TL) response was investigated. The irradiations were performed using γ rays from a ⁶⁰Co source in the dose range from 0.1 to 25 kGy. The material displayed good sensitivity for γ-rays and intensity of TL signals is dependent on γ-ray dose and Li₂O content. For each dose level and investigated temperature range (50-350 °C), exactly single isolated glow peak appears in the temperature range of 165-205 °C depending on both Li₂O concentrations and time of exposure. The shape of the glow peak has altered significantly with increase in the gamma ray dose or Li₂O concentrations. The glass composition with x=50 mol% doped with 10⁻³ mol% of MgO presented the best TL response. The results of the present study indicated that the recorded single and isolated high temperature peak is a good candidate for TL dosimetric investigations. This indicates that 50 B₂O₃-50Li₂O-doped with 10⁻³ mol% of MgO is possibly used as materials for radiation dosimetry in the dose range of 0.1-20 kGy.     

The analysis of thermoluminescent glow peaks of copper doped ZnS thin films after β-irradiation

In the given study, the thermoluminescence (TL) properties of copper (Cu)-doped ZnS thin films were investigated after β-irradiation at room temperature (RT). It was observed that the glow curve of this material has two broad TL peaks, in which one of them was centered at about 110 °C and the other at about 170 °C for a heating rate of 1 °C s⁻¹ in the temperature range from RT to 350 °C. The additive dose (AD), T_m(E_a)−T_stop, repeated initial rise (RIR), variable heating rate (VHR) and computerized glow curve deconvolution (CGCD) methods were used to analyze its glow curves. These methods indicated that the glow curve of this material is the superposition of a number of first- and general-order glow peaks, or at least due to the distribution of traps. The dose responses and fading process of both peaks were also examined, and it was observed that the dose responses of both peaks have similar pattern. First they follow a good linearity with different slopes and then saturate at approximately same dose level (2 kGy). The low-temperature broad peak nearly disappeared after 1 week storage in the dark at RT. On the other hand, the intensity of the high-temperature broad peak was approximately reduced to 50% of its original value. The TL emission spectrum of this material has two main emission bands, namely, the blue and green bands. The first glow peak emits predominantly in blue region, whereas the second glow peak in the green region.     

Features of thermoluminescence in anion-defective alumina single crystals after highdose irradiation

The effect of high-dose irradiation by electron beam with nanosecond duration and by gamma-rays on thermoluminescence (TL) yield of anion-defective dosimetric Al₂O₃:С crystals is studied. It is shown that in a wide dose range up to 10 kGy no significant changes in the TL curve shape and the temperature position of the main dosimetric peak (T = 460 K) are observed. The TL yield of this peak is in saturation in the high-dose range 5–80 kGy. Then anomalous increase in TL yield is registered at the dose growth up to 800 kGy. With that an intensive band appears in the green spectrum region in the photoluminescence spectrum. The role of aggregate defects forming F₂-type centers with the increase of TL yield in Al₂O₃:С crystals under high-dose irradiation is discussed.     

Argon ions induced thermoluminescence properties of Ba0.12Sr0.88SO4 phosphor

Thermoluminescence properties of barium strontium mixed sulfate have been studied by irradiation with Argon ions. The sample was recrystallized by chemical co-precipitation techniques using H₂SO₄. The X-ray diffraction study of prepared sample suggests the orthorhombic structure with average grain size of 60 nm. The samples were irradiated with 1.2 MeV Argon ions at fluences varying between 10¹¹ and 10¹⁵ ions/cm². The argon ions penetrate to the depth of 1.89 μm and lose their energy mainly via electronic stopping. Due to ion irradiation, a large number of defects in the sample are formed. Thermally stimulated luminescence (TSL) glow curves of ion irradiated Ba_0.12Sr_0.88SO₄ phosphor exhibit broad peak with maximum intensity at 495 K composed of four overlapping peaks. This indicates that different sets of traps are being activated within the particular temperature range each with its own value of activation energy (E) and frequency factor (s). Thermoluminescence (TL) glow curves were recorded for each of the ion fluences. A linear increase in intensity of TL glow peaks was found with the increase in ion dose from 59 kGy to 5.9 MGy. The kinetic parameters associated with the prominent glow peaks were calculated using glow curve deconvolution (GCD), different glow curve shape and sample heating rate methods.     

Microstructure of epitaxial SrRuO3 thin films on MgO substrates

SrRuO₃ thin films have been grown on singular (1 0 0) MgO substrates using pulsed laser deposition (PLD) in 30 Pa oxygen ambient and at a temperature of 400-700 °C. Ex situ reflection high-energy electron diffraction (RHEED) as well as X-ray diffraction (XRD) θ/2θ scan indicated that the films deposited above 650 °C were well crystallized though they had a rough surface as shown by atom force microscopy (AFM). XRD Φ scans revealed that these films were composed of all three different types of orientation domains, which was further confirmed by the RHEED patterns. The heteroepitaxial relationship between SrRuO₃ and MgO was found to be [1 1 0] SRO//[1 0 0] MgO and 45°-rotated cube-on-cube [0 0 1] SRO//[1 0 0] MgO. These domain structures and surface morphology are similar to that of ever-reported SrRuO₃ thin films deposited on the (0 0 1) LaAlO₃ substrates, and different from those deposited on (0 0 1) SrTiO₃ substrates that have an atomically flat surface and are composed of only the [1 1 0]-type domains. The reason for this difference was ascribed to the effect of lattice mismatch across the film/substrate interface. The room temperature resistivity of SrRuO₃ films fabricated at 700 °C was 300 μΩ cm. Therefore, epitaxial SrRuO₃ films on MgO substrate could serve as a promising candidate of electrode materials for the fabrication of ferroelectric or dielectric films.     

Excitation of thermoluminescence in Eu doped Ba0.12Sr0.88SO4 nanophosphor by low energy argon ions

In the present paper thermoluminescence properties of argon ions irradiated barium strontium mixed sulphate phosphor are reported. The Ba_0.12Sr_0.88SO₄ phosphor was prepared by chemical co-precipitation method. The X-ray diffraction study of prepared sample suggests orthorhombic structure with average grain size of 37 nm. The samples were irradiated with 1.2 MeV Argon ions at fluences varying between 10¹¹-10¹⁵ ions/cm². The argon ions penetrate to the depth of 1.89 μm and lose their energy mainly via electronic stopping. Due to ion irradiation, a large number of defects in the sample are formed. Thermoluminescence (TL) glow curves were recorded for each of the ion fluence. These curves exhibit one broad peak with maximum intensity at 498 K composed of three overlapping peaks. This indicates that different sets of traps are being activated within the particular temperature range each with its own value of activation energy (E) and frequency factor (s). The peaks were observed due to formation of trap levels by ion irradiation and subsequently activation of traps on thermal stimulation. The TL response of the nanophosphor is linear in the dose range 59 kGy-590 MGy. Kinetic parameters associated with the prominent peaks were calculated using glow curve deconvolution (GCD) and verified by different glow curve shape and sample heating rate methods.     

Determination of trapping parameters of dosimetric thermoluminescent glow peak of lithium triborate (LiB3O5) activated by aluminum

Lithium triborate (LBO) is a newly developed ideal nonlinear optical (NLO) crystal used in laser weapon, welder, radar, tracker, surgery, communication, etc. The effective atomic number (Z_eff=7.3) makes it a tissue equivalent material and this encourages studies on its thermoluminescence (TL) properties for a radiation dosimetry. The previous studies have shown that Al-doped LiB₃O₅ is a promising thermoluminescent dosimetric (TLD) material for dosimetric purposes and continuous and systematic investigations to improve its quality to get ones suited for dosimeter applications are worthy. In the given study, the additive dose (AD), initial rise with partial cleaning (IR), variable heating rate (VHR), peak shape (PS), three-points method (TPM) and computerized glow deconvolution (CGCD) methods were used to determine the kinetic parameters, namely the order of kinetics (b), activation energy (E_a) and the frequency factor (s) associated with the dosimetric thermoluminescent glow peak (P3) of Al-doped LiB₃O₅ after different dose levels with β-irradiation.     

A novel blue-emitting long-lasting proyphosphate phosphor Sr2P2O7:Eu,Y

By introducing the Y³⁺ into Sr₂P₂O₇:Eu²⁺, we successfully prepared a kind of new phosphor with blue long-lasting phosphorescence by the high-temperature solid-state reaction method. In this paper, the properties of Sr₂P₂O₇:Eu²⁺,Y³⁺ were investigated utilizing XRD, photoluminescence, luminescence decay, long-lasting phosphorescence and thermoluminescence (TL) spectra. The phosphor emitted blue light that was related to the 4f⁶5d¹-⁸S_7/2 transition of Eu²⁺. The bright blue phosphorescence could be observed by naked eyes even 8 h after the excitation source was removed. Two TL peaks at 317 and 378 K related to two types of defects appeared in the TL spectrum. By analyzing the TL curve the depths of traps were calculated to be 0.61 and 0.66 eV. Also, the mechanism of LLP was discussed in this report.     

Dispersion properties of hollow-core photonic bandgap fibers based on a square lattice cladding

In this paper the dispersion properties and confinement loss of hollow-core photonic bandgap fibers (PBGFs) based on a square lattice (SL) with rounded square air-holes was investigated for the first time, by using a full-vector finite element method (FEM). The waveguide group velocity dispersion (GVD) curves with different core diameter D, air hole size d, rounded diameter d_c and hole pitch Λ are presented. The influence of the number of cladding rings on dispersion and confinement loss were also calculated. It was found that as Λ or d increases, the width of PBG becomes wider, and that D and the number of cladding rings have a smaller influence on waveguide GVD. The ratio between bandgap width and central wavelength in our simulation is about 38.1%, which is larger than that of hollow-core PBGFs with triangular lattice (TL) (∼25%). By simulation, the desired zero dispersion wavelength or desired dispersion slope could be obtained by properly choosing the value of d_c or Λ. Compared to TL PBGF, at least nine cladding rings is needed to achieve the confinement loss less than 0.1 dB/m for future application.     

Comparative evaluation of performance of percolated perpendicular media using FePt–MgO/Pt/Cr trilayer and FePt–MgO/MgO bilayer

(Fe₄₈Pt₅₂)_100−x–(MgO)_x films were used to examine the performance of a perpendicular percolated medium. Two underlayers, Pt(0 0 1)/Cr(0 0 2) and MgO(0 0 2), were used for comparison. The (Fe₄₈Pt₅₂)_100−x–(MgO)_x film with the MgO underlayer exhibits a strong preference to segregate at FePt grain boundaries. The microstructure with small closely packed MgO particles (2–4 nm) dispersed uniformly in the L1₀ FePt matrix was achieved in the Pt/Cr underlayered sample. Structural data reveal that the precipitate is crystallographically coherent with the surrounding L1₀ FePt phase and preserves good lattice alignment. Magnetic results indicate significant pinning behavior for those introduced non-magnetic columns with an enhanced coercivity of about 70%—much greater than that of the MgO underlayered samples. Percolated perpendicular medium can be realized in the FePt system and a Pt(0 0 1)/Cr(0 0 2) underlayer promotes the formation of pinning sites within the FePt grains.     

Substrate and orientation influence on electrical properties of sputtered La-doped PZT thin films

Pb_1−2y/3La_yZr_xTi_1−xO₃ (PLZT) thin films have been prepared “in situ” by multi-target sputtering on Silicon, LaAlO₃ (LAO) and MgO substrates covered with a Pt bottom electrode. The purpose was to grow tetragonal PLZT films (Zr/Ti = 28/72 with different La contents) on these various substrates and to compare their electrical properties. To this aim, Pt was first deposited on the three different substrates to get (1 1 1)Pt/Si, (1 1 1)Pt/LAO and (2 0 0)Pt/MgO. Then PLZT was deposited in a same run on these three kinds of substrates and the influence of La contents and film orientation on electrical properties was investigated. The La content was varied from y = 0 to y = 32 in order to explore the phase transition between ferroelectric and paraelectric phases as a function of the substrate. For large amount of Lanthanum, relaxor behavior has been observed and studied.     

Dependence of peak height of glow curves on heating rate in thermoluminescence

The area under the glow curve (no thermal quenching and same dose) is conserved only in TL-time plots and is not conserved (scales by a factor by which heating rate is increased) in TL-temperature plots. This increase in area under TL-temperature glow curves with increase in heating rate at a constant dose should not be interpreted as increase in sensitivity of the dosimeter and is the consequence of transformation of time to temperature scale (temperature scale obtained from time scale by multiplying with β, T=T₀+βt). This is further supported by the fact that the light output or integrated counts seen by the PMT do not change (ignoring statistical fluctuations) with increase in heating rate at a constant dose. Further for a given heating rate, the glow peak height is similar in time and temperature plots and the glow peak height increases with increase in heating rate. However to conserve area in TL-temperature plots, the TL intensity should be divided by the respective heating rate, which will lead to the decrease of glow peak height in I/β-temperature plots and is the artifact of the normalization process. However for normalized glow curves (I/β-temperature), the glow peak height decreases with increase in heating rate, which is actually true for I/β or TL/β versus temperature plots. Hence it is recommended that in such cases where normalized glow curves (I/β versus temperature) are presented, the obtained peak height must be multiplied by β. By doing so, glow peak height increases with increase in heating rate. In addition to the above, studies are also carried out by considering thermal quenching effect and it is found that a logical way to measure thermal quenching quantitatively is to record the decrease of integrated counts (PMT current) with increase in heating rate at a constant dose, i.e. the integrated peak area (PMT current or TL-time or TL/β-temperature) must be plotted against the heating rate and the same should be used for interpretation of thermal quenching effect. Only this proves the fact whether the decrease of TL intensity (TL/β-temperature) is due to thermal quenching or not.     

Spin-transfer switching in MgO magnetic tunnel junction nanostructures

Spin-transfer driven switching was observed in MgO based magnetic tunnelling junctions (MTJ) with tunnelling magnetoresistance ratio of up to 160% and the average intrinsic switching current density (J_c0) down to 2 MA/cm², which are the best known results reported in spin-transfer switched MTJ nanostructures. Based on a comparison of results both from MgO and AlO_x MTJs, further switching current decrease via MgO dual structures with two pinned layers is discussed.     

Superconducting molybdenum nitride epitaxial thin films deposited on MgO and α-Al2O3 substrates by molecular beam epitaxy

Molybdenum nitride Mo₂N_x films were grown on MgO(0 0 1) and on α-Al₂O₃(0 0 1) substrates by molecular beam epitaxy under nitrogen radical irradiation. X-ray photoelectron spectroscopy revealed that the composition of the film varied in the range of Mo₂N_1.4-Mo₂N_2.8 depending on the growth temperature. The deposition at 973 K gave well-crystallized films on both substrates. The high-resolution reciprocal space mapping by X-ray diffraction showed that the nitrogen-rich γ-Mo₂N crystalline phase (the composition: Mo₂N_1.4) was epitaxially grown on MgO at 923 K with a slight tetragonal distortion (a = 0.421 and c = 0.418 nm) to fit the MgO lattice (a = 0.421 nm). On α-Al₂O₃(0 0 1), nitrogen-rich γ-Mo₂N (Mo₂N_1.8) was grown at 973 K with (1 1 1) planes parallel to the substrate surface. X-ray diffraction analysis with a multi-axes diffractometer revealed that the γ-Mo₂N on α-Al₂O₃(0 0 1) had a slight rhombohedral distortion (a = 0.4173(2) and α = 90.46(3)°). Superconductivity was observed below 2.8-3 K for the films grown at 973 K on MgO and on α-Al₂O₃(0 0 1).     

Crystal orientation dependence of ferromagnetism in Fe-implanted MgO single crystals

Single crystals of MgO with (100), (110) and (111) orientations were implanted with 64 keV Fe ions at a dose of 1.9×10¹⁷ ions/cm² by using metal-vapor vacuum arc ion source (MEVVA). The magnetic properties were investigated by a superconducting quantum interference device magnetometer and Rutherford backscattering spectrometry (RBS) was used to analyze the Fe concentration and distribution. The presence of Fe nanoparticles in MgO matrix was verified by magnetization measurements. Results show that all the samples behave with ferromagnetism at 5 K and 300 K, and the coercive field, H_C, follow well the relation: at measured temperatures. The orientation dependence of the coercive field may result from the different distribution of Fe nanoparticle size.     

Thermoluminescence kinetic study of binary lead-silicate glasses

This paper describes a detailed experimental study of the thermoluminescence (TL) properties of four binary lead-silicate glasses, with PbO concentrations ranging from 32% to 62% in mole percent. The TL glow peaks between room temperature and 300 °C were analyzed using a systematic thermal cleaning technique. The T_max-T_stop and E-T_stop methods of analysis were used to identify the number of peaks under the glow curves, and to obtain the activation energy E for each TL trap. A computerized glow curve fitting analysis is used to fit the experimental data to four first-order peaks with maxima at temperatures of 54, 80, 110 and 210 °C, as measured with a heating rate of 2 °C/s. The kinetic parameters of the glow-peak at 210 °C were confirmed by using phosphorescence decay methods of analysis. The TL traps associated with the low-temperature TL peak at 54 °C are found to depend strongly on the PbO concentration of the samples, while the higher-temperature TL peaks show a behavior independent of the PbO concentration. The activation energy E and frequency factor s of the low-temperature TL trap associated with the peak at 54 °C are consistent with a trap involving a delocalized transition through the conduction band. However, the activation energies and frequency factors for the higher-temperature TL traps are consistent with traps involving localized transitions via an excited state below the conduction band. The data suggest that these higher-temperature TL traps are associated with the common silicate matrix in these binary silicate glasses.     

Thermoluminescence studies on Cu-doped Li2B4O7 single crystals

Lithium tetraborate (Li₂B₄O₇) is a tissue equivalent material and single crystals of this material doped with Cu are promising for dosimetric applications. In the present study highly transparent single crystals of lithium tetraborate (Li₂B₄O₇) doped with Cu (0.5 wt%) have been grown using the Czochralski technique. The Li₂B₄O₇:Cu crystals were studied using photoluminescence, X-ray diffraction (XRD), UV-vis transmission, time resolved fluorescence and thermoluminescence (TL) techniques. The TL readout of Li₂B₄O₇:Cu crystals showed two well-defined glow peaks at 402 K (peak-1) and 513 K (peak-2) for a 4 K/s heating rate. While the low temperature TL peak-1 fades completely within 24 h at room temperatures, the main dosimetric peak-2 remains the same. The TL sensitivity of the grown single crystal is found to be 3.3 times that of a conventional TL phosphor, TLD-100. The Li₂B₄O₇:Cu crystals showed a linear TL dose-response in the range from 1 mGy to 1 kGy. The TL analysis using a variable dose method revealed first order kinetics for both the peaks. Trap depth and frequency factor for peak-1 were found to be 0.81 eV and 5.2×10⁹ s⁻¹, whereas for peak-2 the values were 1.7 eV and 1.7×10¹⁶ s⁻¹, respectively.     

Effect of microstructure of MgO buffer layer on BaTiO3 grown on silicon substrates

MgO ultrathin films were grown on Si(1 0 0) substrates as buffer layers for the growth of ferroelectric BaTiO₃ thin films by laser molecular beam epitaxy (L-MBE). The deposition process of MgO buffer layers grown on silicon was in situ monitored by reflection high-energy electron diffraction (RHEED). The structure of BaTiO₃ films fabricated on MgO buffers was investigated by X-ray diffraction. Biaxially textured MgO was obtained at high laser energy density, but when the laser energy was lowered, MgO buffer was transformed to the form of texture with angular dispersion with the increase of the film thickness. BaTiO₃ films grown on the former buffer were completely (0 0 1) textured, while those on the latter were (0 0 1) preferred orientated. Furthermore, the fabricated MgO buffers and BaTiO₃ films had atomically smooth surface and interface. All these can reveal that the quality of textured MgO buffer is a key factor for the growth of BaTiO₃ films on silicon.     

Luminescence and evaluation of trapping parameters in NaMgSO4Cl: X (X=Cu or Ce) phosphor

Thermoluminescence (TL) characteristics of recently developed high sensitive mixed halosulphate phosphors, NaMgSO₄Cl: Cu and NaMgSO₄Cl: Ce were studied in comparison with CaSO₄: Dy in order to assess the possibility of their use in personal monitoring and TLD phosphors at very low dose of 5 Gy. It was found that NaMgSO₄Cl: Cu is 5.59 times and NaMgSO₄Cl: Ce is 6.18 times more sensitive as compared to standard CaSO₄: Dy. UV photo-excited luminescence from Cu to Ce doped NaMgSO₄Cl halosulphate phosphors has been investigated. The intense emission of the spectrum is assigned to electronic transitions 3d⁹4s¹→3d¹⁰ in monovalent copper ion and 5d→4f in Ce³⁺ ions. Increase in PL peak intensity suggesting that Cu and Ce play an important role in PL emission in the present matrix. These phosphors were synthesized by the wet chemical method. XRD, photoluminescence (PL) and thermoluminescence (TL) characterization of phosphors has been reported in this paper. The preparation of an inexpensive and high sensitive NaMgSO₄Cl: Cu and NaMgSO₄Cl: Ce with TL glow peaks for different concentrations are observed between 160 and 195 °C and between 200 and 225 °C, respectively, exposed to gamma-rays of ⁶⁰Co for their thermoluminescence (TL) properties. The glow curves have been recorded at a heating rate of 2 K s^?1 and irradiated at a dose rate of 0.995 kGy h^?1 for 5 Gy. In present study the trapping parameters such as order of kinetics (b), activation energy (E) and frequency factors (s) have been calculated for the 195 and 200 °C glow peaks of NaMgSO₄Cl: Cu and NaMgSO₄Cl: Ce, respectively by using Chen's method. The paper discusses the luminescence of Cu⁺ and Ce³⁺ by simple method of incorporation in NaMgSO₄Cl host.     

Microstructure and magnetic properties of nanocomposite FePt/MgO and FePt/Ag films

An in-plane magnetic anisotropy of FePt film is obtained in the MgO 5 nm/FePt t nm/MgO 5 nm films (where t=5, 10 and 20 nm). Both the in-plane coercivity (H_c∥) and the perpendicular magnetic anisotropy of FePt films are increased when introducing an Ag-capped layer instead of MgO-capped layer. An in-plane coercivity is 3154 Oe for the MgO 5 nm/FePt 10 nm/MgO 5 nm film, and it can be increased to 4846 Oe as a 5 nm Ag-capped layer instead of MgO-capped layer. The transmission electron microscopy (TEM)-energy disperse spectrum (EDS) analysis shows that the Ag mainly distributed at the grain boundary of FePt, that leads the increase of the grain boundary energy, which will enhance coercivity and perpendicular magnetic anisotropy of FePt film.