Structure of the free exciton luminescence band of heteroepitaxial ZnSe/GaAs layers

The exciton reflectance and photoluminescence spectra of epitaxial ZnSe/GaAs layers with a thickness of 2–4 μm are investigated in the temperature range 10–120 K. It is shown that one of the causes of the formation of the doublet structure of the A _n=1 photoluminescence band is interference of the exciton radiation at the boundaries of the near-surface dead layer. Fiz. Tverd. Tela (St. Petersburg) 40, 881–883 (May 1998)     

Effect of free electron-hole pairs on the saturation of excitonic absorption in GaAs/AlGaAs quantum wells

The pump-probe experimental method is used to investigate the effect of photoexcited carriers on the dynamics of the exciton absorption spectra of GaAs / Al_xGa_1–x As-multilayer quantum wells. Use of the method of moment analysis for processing the results makes it possible to identify the simultaneous contribution of changes in oscillator strength and width of the exciton lines in the saturation of exciton absorption. It was found that the oscillator strength recovers its initial value in the course of the first 100–130 ps, whereas broadening and energy-shift of the exciton lines is observed for 700–800 ps. These are the first experimental measurements of the excitation densities at which the oscillator strength of the excitonic state saturates when the latter is perturbed only by free-electron-hole pairs, and when it is perturbed only by other excitons. Fiz. Tverd. Tela (St. Petersburg) 40, 1130–1133 (June 1998)     

Superconductivity in the Ti-D system under pressure

The pressure dependence of the superconducting transition temperature in TiD_0.74 has been measured up to 30 GPa in a diamond high-pressure chamber. It is found that the deuteride TiD_0.74 becomes a superconductor at pressures corresponding to the transition to the high-pressure ζ phase, with a transition temperature that increases from 4.17 to 4.43 K in the interval P=14–30 GPa. The value extrapolated to atmospheric pressure T _c (0)=4.0 K is significantly lower than the superconducting transition temperature (T _c =5.0 K) measured earlier in the metastable state obtained by quenching TiD_0.74 under pressure. It is assumed that the significant difference of the extrapolated value from the superconducting transition temperature in the metastable state after quenching under pressure is caused by a phase transition on the path from the stability region of the ζ phase under pressure to the region of the metastable state at atmospheric pressure. Fiz. Tverd. Tela (St. Petersburg) 40, 2153–2155 (December 1998)     

Specific features in the temperature dependence of photoluminescence from CdTe/ZnTe size-quantized islands and ultrathin quantum wells

A study has been carried out of the temperature dependences of luminescence spectra on a large number of CdTe/ZnTe structures differing in average thickness, 〈L _z〉=0.25–4 monolayers (ML), and CdTe layer geometry (continuous, island type). The influence of geometric features in the structure of ultrathin layers on linewidth, the extent of lateral localization of excitons, their binding energy, and exciton-phonon coupling is discussed. It is shown that in island structures there is practically no lateral exciton migration. The exciton-phonon coupling constant in a submonolayer structure has been determined, Γ_ph=53 meV, and it is shown that in structures with larger average thicknesses Γ_ph is considerably smaller. Substantial lateral exciton migration was observed to occur in a quantum well with 〈L _z〉=4 ML, and interaction with acoustic phonons was found to play a noticeable part in transport processes. It has been established that the depth of the exciton level in a quantum well and structural features of an ultrathin layer significantly affect the temperature dependences of integrated photoluminescence intensity. Fiz. Tverd. Tela (St. Petersburg) 41, 717–724 (April 1999)     

Absorption spectrum and excitons in thin films of the solid electrolyte RbCu4Cl3I2

We have investigated the absorption spectrum of thin films of the superionic conductor RbCu₄Cl₃I₂ synthesized on NaCl crystalline substrates. It is shown that the electron and exciton excitations in the energy interval 3–6 eV are associated with optical transitions in the CuHal sublattice, and the edge of the fundamental band is controlled by optical transitions in the Cu(II)Hal sublattice. It is found that the large band gap of this compound (E _g =3.86 eV) in comparison with those of CuCl and CuI is a result of the small number of Cu ions in the second coordination sphere. The temperature dependence of the spectral position and half-width of the low-temperature exciton band reveals features associated with the phase transitions γ→β (T _c1=170 K) and β→α (T _c2=220 K) and with disordering of the cation sublattice attendant to the transition to the superionic state. Fiz. Tverd. Tela (St. Petersburg) 40, 1022–1026 (June 1998)     

Anisotropy of cubic semimagnetic Cd1−x MnxTe solid solutions and excitonic magnetic polaron energy from polarized-luminescence measurements

Polarized photoluminescence of Cd_1−x Mn_xTe crystals in a weak magnetic field has been studied in Faraday and Voigt geometries. A simple method is proposed to determine the exciton mobility edge and excitonic magnetic-polaron energy. “Forbidden” polarization components of the recombination radiation have been experimentally detected. It has been established that the moments of magnetic polarons are oriented predominantly along the {111} axes. Fiz. Tverd. Tela (St. Petersburg) 40, 894–896 (May 1998)     

Critical conditions for spontaneous relaxation in self-organizing dissipative film systems

It is established that the necessary conditions for spontaneous relaxation of elastic strain energy in a copper-As₆₀Se₄₀ self-organizing dissipative heterostructure is that the elastic deformation energy and the temperature must reach their threshold values. It is shown that in the temperature range 270–340 K the spontaneous relaxation of elastic deformation energy is accompanied by structural-chemical ordering and anomalous diffusion of copper into the glassy chalcogenide semiconductor layer. The maximum concentration of copper dissolved in the films is 40 at. %. Conductivity inversion from p to n type is observed in doped layers obtained by this method. Zh. Tekh. Fiz. 69, 128–129 (August 1999)     

Photoluminescence and multiphonon resonant Raman scattering in Ni-and Co-doped Zn1−x MnxTe crystals

Low-temperature photoluminescence, exciton reflection, and multiphonon resonant Raman scattering spectra of Ni-and Co-doped Zn_1−x Mn_xTe crystals were investigated. Intense emission occurs in a broad spectral region (1100–17 000 cm⁻¹) in the crystals containing Ni atoms. It is caused by intracenter transitions involving Mn²⁺ ions and transitions between the conduction band and a level of the doubly charged acceptor. The features of the exciton photoluminescence and multiphonon resonant Raman scattering involving longitudinal-optical (LO) phonons at various temperatures are investigated. The insignificant efficiency of the localization of excitons on potential fluctuations in the Zn_1−x Mn_xTe:Co crystals is established. A temperature-induced increase in the intensity of the 5LO multiphonon resonant Raman scattering line due to the approach of the conditions for resonance between this line and the ground exciton state is observed in these crystals. Fiz. Tverd. Tela (St. Petersburg) 40, 616–621 (April 1998)     

Transformation of the dimensionality of excitonic states in quantum wells with asymmetric barriers in an electric field

A transformation of the dimensionality of excitonic states from 2D to 3D with increasing external electric field is observed in single GaAs/Al_xGa_1−x As quantum-well structures with asymmetric barriers. The binding energy of a 2D exciton remains constant over a wide range of variation of the field, since the decrease in the binding energy is compensated by increasingly larger penetration of the electronic wave function into the barrier layer, where the exciton binding energy is higher because the effective mass is larger and the dielectric constant of AlGaAs is lower than that of GaAs. When the maximum of the electron wave function is displaced into the barrier as the field increases, the exciton binding energy decreases. As the field increases further, a 2D exciton transforms into a quasi-3D exciton, with a heavy hole in the quantum well and an electron in a resonant above-barrier state. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 3, 207–211 (10 February 1998)     

Excitons in monoclinic zinc diphosphide. Longitudinal exciton and the mixed mode

Exciton absorption spectra in high-quality β-ZnP₂ single crystals have been investigated at T=1.7 K for various directions of the wave vector and various polarization states of the radiation. It has been unambiguously established that the additional high-energy A series, which in some works has been called a D series and ascribed to ZnP₂ crystals, of so-called “rhombic” symmetry,^1,8,10,11 is an intrinsic exciton of the β-ZnP₂ series. A mixed mode has been detected for the first time, and the energy of the longitudinal exciton has been determined. The selection rules for the exciton transitions have been analyzed by a group-theoretical approach, and the symmetry of the nS states of the single exciton has been established on the basis of the experimental data — Γ ₂ ⁻ (z). Fiz. Tverd. Tela (St. Petersburg) 41, 193–202 (February 1999)     

Excitons in ZnP2 crystals in the electric field of a Schottky barrier

A study is made of the effect of electric fields on the exciton states of β-ZnP₂ crystals (T=77 K) in structures with Schottky barriers formed by depositing semitransparent electrically-conducting InSnO₂ films on the crystal surface. The observed changes in the exciton optical reflection spectra when an electrical potential is applied to a barrier are explained by the shift and broadening of the exciton level caused by the Stark effect. The experimental data are compared with calculations based on a theory of exciton optical reflection from planar spatially nonuniform structures. Fiz. Tverd. Tela (St. Petersburg) 40, 884–886 (May 1998)     

Energy relaxation and transport of indirect excitons in AlAs/GaAs coupled quantum wells in magnetic field

The evolution of indirect exciton luminescence in AlAs/GaAs coupled quantum wells after excitation by pulsed laser radiation has been studied in strong magnetic fields (B⩽12 T) at low temperatures (T⩾1.3 K), both in the normal regime and under conditions of anomalously fast exciton transport, which is an indication of the onset of exciton superfluidity. The energy relaxation rate of indirect excitons measured in the range of relaxation times between several and several hundreds of nanoseconds is found to be controlled by the properties of the exciton transport, specifically, this parameter increases with the coefficient of excitonic diffusion. This behavior is qualitatively explained in terms of migration of excitons between local minima of the random potential in the plane of the quantum well. Zh. éksp. Teor. Fiz. 114, 1115–1120 (September 1998)     

Study of the phase composition of AgI microcrystals by exciton spectroscopy and differential scanning calorimetry

Differential absorption spectra of RbAg₄I₅ have been measured in the exciton absorption region of AgI within the temperature range 27–250 °C. In the same temperature range, the temperature behavior of the heat capacity of RbAg₄I₅, Rb₂AgI₃, and KAg₄I₅ have been obtained by differential scanning calorimetry. An analysis of the results suggests that, in AgI microcrystals less than r _cr in size, the upper boundary for stability of the low-temperature β modification is higher by several tens of degrees. Fiz. Tverd. Tela (St. Petersburg) 40, 852–854 (May 1998)     

Optical modeling and optimization of multilayer organic photovoltaic cells

We show that the spectral position of the maxima in the exciton generation rate G in a photovoltaic cell, taking into account the spectral energy distribution in the AM1.5G solar spectrum, is determined by the absorption bands of its donor and acceptor materials. It varies slightly as the thicknesses of the layers in the cell change. Interference of light affects only the magnitude of these maxima. For a cell based on a CuPc (copper phthalocyanine)–C₆₀ (fullerene) heterojunction, the G maxima are located at 640 nm, 720 nm (absorption in CuPc) and close to 495 nm (absorption in C₆₀). The photovoltaic cell can be optimized using the ratio of the magnitudes of these maxima and their variations as layer thicknesses are varied and the exciton diffusion length is taken into account.     

A series of free exciton lines in zinc diarsenide

A structure corresponding to the n=1, 2, and 3 free-exciton states is observed in the optical transmission spectra of zinc diarsenide at 5 K. The band gap for E⊥C at temperatures of 5–300 K and the exciton binding energy (17.5 eV) are determined. Fiz. Tverd. Tela (St. Petersburg) 40, 877–878 (May 1998)     

Adsorption-resistant properties of copper phthalocyanine dispersed in a polymer matrix

The conduction mechanism in copper phthalocyanine (CuPc)-polymer composite thin films and their sensitivity to nitrogen dioxide are investigated. It is established that a hopping conduction mechanism in the regime of single electron hops prevails in these materials at 290–350 K, and the magnitude and rate of the adsorption-resistance sensitivity to NO₂ is higher than in pure CuPc. Fiz. Tverd. Tela (St. Petersburg) 40, 773–775 (April 1998)     

Photoreflection and photoconduction spectra of CdS crystals: Excitons in the electric fields of surface states

The exciton photoreflection spectra of CdS crystals are studied. It is found that the form of the exciton photoreflection spectrum is determined by a Stark shift of the exciton energy in the electric field of surface states. The dependences of the exciton photoreflection spectrum on temperature on the intensity and wavelength of the modulating radiation, and on the processes by which the photoreflection signal relaxes is determined. An energy scheme is proposed for the surface states which explains the observed effects of photoinduced changes in the surface field. A correlation is established between the exciton photoreflection spectrum and the form of the fine structure in the photoconductivity. Fiz. Tverd. Tela (St. Petersburg) 40, 875–876 (May 1998)     

Formation and stabilization of F centers following direct generation of self-trapped excitons in KCl crystals

The spectrum of luminescent F centers generated in high-purity KCl crystals by 7–10.2-eV photons has been measured at 230 K. The pulsed annealing of these centers (250–550 K), as well as the dependence of the efficiency of stable F-center generation on irradiation temperature (80–500 K) has been studied. The efficiencies of F ⁻ and Cl ₃ ⁻ -center generation are maximum under direct optical creation of self-trapped excitons in the region of the Urbach intrinsicabsorption tail. Besides the exciton decay with formation of F centers and mobile H centers, a high-temperature exciton decay channel which involves creation of cation defects stabilizing the H centers has been revealed. Fiz. Tverd. Tela (St. Petersburg) 41, 433–441 (March 1999)     

Vibronic charge-transfer excitons: Possible nature of the unusual properties of virtual perovskitelike ferroelectrics

A vibronic charge-transfer exciton, which is a pair of Jahn-Teller electron and hole polarons, is considered as a possible cause of the appearance of the Müller phase in the virtual ferroelectric SrTiO₃ and the “green” luminescence in the virtual ferroelectric KTaO₃. The two “green” luminescence bands can be associated with emission from two states of a typical intrinsic defect, viz., a vibronic charge-transfer exciton trapped by an oxygen vacancy and an isolated vibronic charge-transfer exciton. In both cases the “green” luminescence corresponds to the recombination of the electron and the hole in the vibronic charge-transfer exciton, which is accompanied by the emission of light. The properties of the Müller phase can be attributed to mixing of the normal state and states of the vibronic charge-transfer exciton phase when they interact with polarization in the soft SrTiO₃ matrix under the conditions of a pseudo-Jahn-Teller (pseudo-JT) effect on a soft TO mode of the displacement type. In this case the vibronic charge-transfer exciton phase forming the low-lying excited states has “order-disorder” degrees of freedom and exists at temperatures significantly below the point of the order-disorder ferroelectric transition in SrTiO₃ at T=T Q≈37 K. The corresponding lowering of the symmetry of the vibronic charge-transfer exciton phase to polar symmetry leads to the possibility of a long-period incommensurate phase in such excited states, which arises as a result of the appearance of a Lifshitz invariant. The valence-band state making the largest contribution of the pseudo-JT effect corresponds to a wave vector equal to the critical wave vector of the incommensurate vibronic charge-transfer exciton phase. When the temperature is lowered, the pseudo-JT distortion increases down to ∼T _Q and subsequently saturates in accordance with the saturation of the dielectric constant. The basic assumption in the model is that the temperature T=T _Q corresponds to the narrow temperature range for the transition from an intermediate to a strong pseudo-JT effect under the conditions for the realization of polarization tunneling states. The appearance of a significant admixture of states of the modulated ferroelectric vibronic charge-transfer exciton phase to the ground state under the conditions for the realization of polarization tunneling states at low temperatures provides an explanation for the principal properties of the Müller phase. Fiz. Tverd. Tela (St. Petersburg) 40, 907–909 (May 1998)     

Influence of impurities on the low-temperature deformation of nanocrystalline copper

The influence of ZrO₂ particles on the low-temperature deformation of nanocrystalline copper produced by strong plastic deformation is investigated using equichannel angular pressing. A comparison is made between the deformation characteristics in tension and compression in the temperature range 4.2–400 K, measured for copper and the composite Cu:0.3 vol. % ZrO₂. It is shown that within 4.2–200 K the yield point σ _sm of the composite is higher than that for copper, attaining 680 MPa at 4.2 K, then the yield points are close in value up to room temperature, and diverge again as the temperature is raised. Possible causes of the dissimilar influence of an impurity on the strength and plasticity characteristics of nanocrystalline copper in various temperature intervals are discussed. Fiz. Tverd. Tela (St. Petersburg) 40, 1639–1641 (September 1998)