Atomically Thin Arsenene and Antimonene: Semimetal–Semiconductor and Indirect–Direct Band‐Gap Transitions

The typical two‐dimensional (2D) semiconductors MoS₂, MoSe₂, WS₂, WSe₂ and black phosphorus have garnered tremendous interest for their unique electronic, optical, and chemical properties. However, all 2D semiconductors reported thus far feature band gaps that are smaller than 2.0 eV, which has greatly restricted their applications, especially in optoelectronic devices with photoresponse in the blue and UV range. Novel 2D mono‐elemental semiconductors, namely monolayered arsenene and antimonene, with wide band gaps and high stability were now developed based on first‐principles calculations. Interestingly, although As and Sb are typically semimetals in the bulk, they are transformed into indirect semiconductors with band gaps of 2.49 and 2.28 eV when thinned to one atomic layer. Significantly, under small biaxial strain, these materials were transformed from indirect into direct band‐gap semiconductors. Such dramatic changes in the electronic structure could pave the way for transistors with high on/off ratios, optoelectronic devices working under blue or UV light, and mechanical sensors based on new 2D crystals.     

Experiment‐Driven Modeling of Crystalline Phosphorus Nitride P3N5: Wide‐Ranging Implications from a Unique Structure

Nitridophosphates have emerged as advanced materials due to their structural variability and broad technical applicability. Their binary parent compound P₃N₅, a polymeric network of corner‐ and edge‐sharing PN₄ tetrahedra with N 2 and N 3 sites, is a particularly interesting example. We present a study of the band gap and electronic structure of α‐P₃N₅ by using soft X‐ray spectroscopy measurements and DFT calculations. The band gap, which is crucial for all applications, is measured to be 5.87±0.20 eV. This agrees well with the calculated, indirect band gap of 5.21 eV. The density of states are found to show dramatic variation between the nonequivalent N sites and a high degree of covalency. Coupled to these results is what is, to our knowledge, the largest core hole shift reported to date for a soft X‐ray absorption spectrum. We propose an intuitive bonding scheme for α‐P₃N₅ that explains the observed band gap and unique density of states, while providing a framework for predicting these properties in known and yet to be discovered PN compounds. We briefly consider the implications of these results for new low‐dimensional P and PN materials, which alongside graphene, could become important materials for nanoelectronics.     

Direct arylation synthesis of thienoisoindigo‐based low‐band‐gap polymer from asymmetric donor–acceptor monomer

Thienoisoindigo (TIG) moiety has been paid numerous attentions as an excellent acceptor building block in low‐band‐gap polymers. Herein, a new TIG‐dithiophene alternating copolymer (PTIG2T) was successfully synthesized from an asymmetric TIG‐based donor–acceptor (D‐A) monomer via the self‐condensation‐type direct arylation polymerization. PTIG2T exhibited the light absorption over 1000 nm owing to the intramolecular charge transfer in the thin film state, which corresponded to an optical band gap of 1.24 eV. The HOMO and LUMO levels of PTIG2T were determined to be −5.08 and −3.60 eV, respectively. Furthermore, the organic photovoltaic (OPV) with a PTIG2T/PC₆₁BM active layer achieved a power conversion efficiency (PCE) of 3.19%, which is one of the highest PEC achieved by OPVs with TIG‐based materials. © 2017 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2018 , 56, 430–436     

Small‐Band‐Gap Halide Double Perovskites

Despite their compositional versatility, most halide double perovskites feature large band gaps. Herein, we describe a strategy for achieving small band gaps in this family of materials. The new double perovskites Cs₂AgTlX₆ (X=Cl ( 1 ) and Br ( 2 )) have direct band gaps of 2.0 and 0.95 eV, respectively, which are approximately 1 eV lower than those of analogous perovskites. To our knowledge, compound 2 displays the lowest band gap for any known halide perovskite. Unlike in A^IB^IIX₃ perovskites, the band‐gap transition in A^I₂BB′X₆ double perovskites can show substantial metal‐to‐metal charge‐transfer character. This band‐edge orbital composition is used to achieve small band gaps through the selection of energetically aligned B‐ and B′‐site metal frontier orbitals. Calculations reveal a shallow, symmetry‐forbidden region at the band edges for 1 , which results in long (μs) microwave conductivity lifetimes. We further describe a facile self‐doping reaction in 2 through Br₂ loss at ambient conditions.     

Be2C Monolayer with Quasi‐Planar Hexacoordinate Carbons: A Global Minimum Structure

The design of new materials is an important subject in order to attain new properties and applications, and it is of particular interest when some peculiar topological properties such as reduced dimensionality and rule‐breaking chemical bonding are involved. In this work, we designed a novel two‐dimensional (2D) inorganic material, namely Be₂C monolayer, by comprehensive density functional theory (DFT) computations. In Be₂C monolayer, each carbon atom binds to six Be atoms in an almost planar fashion, forming a quasi‐planar hexacoordinate carbon (phC) moiety. Be₂C monolayer has good stability and is the lowest‐energy structure in 2D space confirmed by a global minima search based on the particle‐swarm optimization (PSO) method. As a semiconductor with a direct medium band gap, Be₂C monolayer is promising for applications in electronics and optoelectronics.     

Lead and HTM Free Stable Two‐Dimensional Tin Perovskites with Suitable Band Gap for Solar Cell Applications

Organic‐inorganic hybrid perovskites have attracted great attention over the last few years as potential light‐harvesting materials for efficient and cost‐effective solar cells. However, the use of lead iodide in state‐of‐the‐art perovskite devices may demonstrate an obstacle for future commercialization due to toxicity of lead. Herein we report on the synthesis and characterization of low dimensional tin‐based perovskites. We found that the use of symmetrical imidazolium‐based cations such as benzimidazolium (Bn) and benzodiimidazolium (Bdi) allow the formation of 2D perovskites with relatively narrow band gaps compared to traditional ‐NH₃⁺ amino groups, with optical band gap values of 1.81 eV and 1.79 eV for Bn₂SnI₄ and BdiSnI₄ respectively. Furthermore, we demonstrate that the optical properties in this class of perovskites can be tuned by formation of a quasi 2D perovskite with the formula Bn₂FASn₂I₇. Additionally, we investigate the change in band gap in the mixed Sn/Pb solid solution Bn₂Sn_xPb_x?1I₄. Devices fabricated with Bn₂SnI₄ show promising efficiencies of around 2.3 %.     

On‐surface Synthesis of a Semiconducting 2D Metal–Organic Framework Cu3(C6O6) Exhibiting Dispersive Electronic Bands

A 2D metal–organic framework (2D‐MOF) was formed on a Cu(111) substrate using benzenehexol molecules. By means of a combination of scanning tunneling microscopy and spectroscopy, X‐ray photoelectron spectroscopy and density‐functional theory, the structure of the 2D‐MOF is determined to be Cu₃(C₆O₆), which is stabilized by O–Cu–O bonding motifs. We find that upon adsorption on Cu(111), the 2D‐MOF features a semiconductor band structure with a direct band gap of 1.5 eV. The O–Cu–O bonds offer efficient charge delocalization, which gives rise to a highly dispersive conduction band with an effective mass of 0.45 m_e at the band bottom, implying a high electron mobility in this material.     

Two‐Dimensional Boron Monolayers Mediated by Metal Substrates

Two‐dimensional (2D) materials, such as graphene and boron nitride, have specific lattice structures independent of external conditions. In contrast, the structure of 2D boron sensitively depends on metal substrate, as we show herein using the cluster expansion method and a newly developed surface structure‐search method, both based on first‐principles calculations. The preferred 2D boron on weaker interacting Au is nonplanar with significant buckling and numerous polymorphs as in vacuum, whereas on more reactive Ag, Cu, and Ni, the polymorphic energy degeneracy is lifted and a particular planar structure is found to be most stable. We also show that a layer composed of icosahedral B₁₂ is unfavorable on Cu and Ni but unexpectedly becomes a possible minimum on Au and Ag. The substrate‐dependent 2D boron choices originate from a competition between the strain energy of buckling and chemical energy of electronic hybridization between boron and metal.     

Bandgap Engineering of Hydroxy-Functionalized Borophene for Superior Photo-Electrochemical Performance

Two-dimensional (2D) semiconducting boron nanosheets (few-layer borophene) have been theoretically predicted, but their band gap tunability has not been experimentally confirmed. In this study, hydroxy-functionalized borophene (borophene-OH) with tunable band gap was fabricated by liquid-phase exfoliation using 2-butanol solvent. Surface-energy matching between boron and 2-butanol produced smooth borophene, and the exposed unsaturated B sites generated by B−B bond breaking during exfoliation coordinated with OH groups to form semiconducting borophene-OH, enabling a tunable band gap of 0.65–2.10 eV by varying its thickness. Photoelectrochemical (PEC) measurements demonstrated that the use of borophene-OH to fabricate working electrodes for PEC-type photodetectors significantly enhanced the photocurrent density (5.0 μA cm⁻²) and photoresponsivity (58.5 μA W⁻¹) compared with other 2D monoelemental materials. Thus, borophene-OH is a promising semiconductor with great optoelectronic potential.     

Bandgap‐Tunable Preparation of Smooth and Large Two‐Dimensional Antimonene

As a highly stable band gap semiconductor, antimonene is an intriguing two‐dimensional (2D) material in optoelectronics. However, its short layer distance and strong binding energy make it challenging to prepare high‐quality large 2D antimonene; therefore, its predicted tunable band gap has not been experimentally confirmed. Now, an approach to prepare smooth and large 2D antimonene with uniform layers that uses a pregrinding and subsequent sonication‐assisted liquid‐phase exfoliation process has been established. Mortar pregrinding provides a shear force along the layer surfaces, forming large, thin antimony plates, which can then easily be exfoliated into smooth, large antimonene, avoiding long sonication times and antimonene destruction. The resulting antimonene also enabled verification of the tunable band gap from 0.8 eV to 1.44 eV. Hole extraction and current enhancement by about 30 % occurred when the antimonene was used as a hole transport layer in perovskite solar cells.     

Direct Solvothermal Synthesis of B/N‐Doped Graphene

Heteroatom‐doping into graphitic networks has been utilized for opening the band gap of graphene. However, boron‐doping into the graphitic framework is extremely limited, whereas nitrogen‐doping is relatively feasible. Herein, boron/nitrogen co‐doped graphene (BCN‐graphene) is directly synthesized from the reaction of CCl₄, BBr₃, and N₂ in the presence of potassium. The resultant BCN‐graphene has boron and nitrogen contents of 2.38 and 2.66 atom %, respectively, and displays good dispersion stability in N‐methyl‐2‐pyrrolidone, allowing for solution casting fabrication of a field‐effect transistor. The device displays an on/off ratio of 10.7 with an optical band gap of 3.3 eV. Considering the scalability of the production method and the benefits of solution processability, BCN‐graphene has high potential for many practical applications.     

Poly(difluorophosphazene) as the First Deep‐Ultraviolet Nonlinear Optical Polymer: A First‐Principles Prediction

A novel concept to obtain the deep‐ultraviolet (DUV) nonlinear optical (NLO) materials is proposed based on the assembling of one‐dimensional (1D) polar motifs into quasi‐1D polymer patterns. Based on the first‐principles calculations, we have successfully discovered an excellent DUV NLO polymer, i.e., poly(difluorophosphazene), with the chemical formula of (PNF₂)_n. Calculations reveal that PNF₂ has a larger band gap, a stronger second harmonic generation effect, a larger birefringence, and a shorter phase‐matching cutoff than KBe₂BO₃F₂. These findings not only demonstrate that the PNF₂ is the first reported DUV NLO polymer, but also could open a new direction to discover novel DUV NLO materials in polymer systems.     

HSH-C10: A new quasi-2D carbon allotrope with a honeycomb-star-honeycomb lattice

Two-dimensional (2D) materials with honeycomb, kagome or star lattice have been intensively studied because electrons in such lattices could give rise to exotic quantum effects. In order to improve structural diversity of 2D materials to achieve unique properties, here we propose a new quasi-2D honeycomb-star-honeycomb (HSH) lattice based on first-principles calculations. A carbon allotrope named HSH-C₁₀ is designed with the HSH lattice, and its mechanical properties have been intensively investigated through total energy, phonon dispersion, ab initio molecular dynamic simulations, as well as elastic constants calculations. Besides the classical covalent bonds, there is an interesting charge-shift bond in this material from the chemical bonding analysis. Additionally, through the analysis of electronic structure, HSH-C₁₀ is predicted to be a semiconductor with a direct band gap of 2.89 eV, which could combine the desirable characteristics of honeycomb and star lattice. Importantly, by modulating coupling strength, a flat band near the Fermi level can be obtained in compounds HSH-C₆Si₄ and HSH-C₆Ge₄, which have potential applications in superconductivity. Insight into such mixed lattice would inspire new materials with properties we have yet to imagine.     

(C6H13NH3)2(NH2CHNH2)Pb2I7: A Two‐dimensional Bilayer Inorganic–Organic Hybrid Perovskite Showing Photodetecting Behavior

Inorganic–organic hybrid perovskites, especially two‐dimensional (2D) layered halide perovskites, have attracted significant attention due to their unique structures and attractive optoelectronic properties, which open up a great opportunity for next‐generation photosensitive devices. Herein, we report a new 2D bilayered inorganic–organic hybrid perovskite, (C₆H₁₃NH₃)₂(NH₂CHNH₂)Pb₂I₇ ( HFA , where C₆H₁₃NH₃⁺ is hexylaminium and NH₂CHNH₂⁺ is formamidinium), which exhibits a remarkable photoresponse under broadband light illumination. Structural characterizations demonstrate that the 2D perovskite structure of HFA is constructed by alternant stacking of inorganic lead iodide bilayered sheets and organic hexylaminium layers. Optical absorbance measurements combined with density functional theory (DFT) calculations suggest that HFA is a direct band gap semiconductor with a narrow band gap (E_g) of ≈2.02 eV. Based on these findings, photodetectors based on HFA crystal wafer are fabricated, which exhibit fascinating optoelectronic properties including large on/off current ratios (over 10³), fast response speeds (τ_rise=310 μs and τ_decay=520 μs) and high responsivity (≈0.95 mA W^?1). This work will contribute to the design and development of new two‐dimensional bilayer inorganic–organic hybrid perovskites for high‐performance photosensitive devices.     

First-Principles Study on Electronic and Optical Properties of Graphene-Like Boron Phosphide Sheets

Two-dimensional semiconducting materials with moderate band gap and high carrier mobil-ity have a wide range of applications for electronics and optoelectronics in nanoscale. On the basis of first-principles calculations, we perform a comprehensive study on the electronics and optical properties of graphene-like boron phosphide (BP) sheets. The global structure search and first-principles based molecular dynamic simulation indicate that two-dimensional BP sheet has a graphene-like global minimum structure with high stability. BP monolayer is semiconductor with a direct band gap of 1.37 eV, which reduces with the number of layers. Moreover, the band gaps of BP sheets are insensitive to the applied uniaxial strain.= The calculated mobility of electrons in BP monolayer is as high as 10⁶ cm²/(V·s). Lastly, the MoS₂/BP van der Waals heterobilayers are investigated for photovoltaic applications, and their power conversion efficiencies are estimated to be in the range of 17.7%－19.7%. This study implies the potential applications of graphene-like BP sheets for electronic and optoelectronic devices in nanoscale.     

Pressure‐Tuneable Visible‐Range Band Gap in the Ionic Spinel Tin Nitride

The application of pressure allows systematic tuning of the charge density of a material cleanly, that is, without changes to the chemical composition via dopants, and exploratory high‐pressure experiments can inform the design of bulk syntheses of materials that benefit from their properties under compression. The electronic and structural response of semiconducting tin nitride Sn₃N₄ under compression is now reported. A continuous opening of the optical band gap was observed from 1.3 eV to 3.0 eV over a range of 100 GPa, a 540 nm blue‐shift spanning the entire visible spectrum. The pressure‐mediated band gap opening is general to this material across numerous high‐density polymorphs, implicating the predominant ionic bonding in the material as the cause. The rate of decompression to ambient conditions permits access to recoverable metastable states with varying band gaps energies, opening the possibility of pressure‐tuneable electronic properties for future applications.     

Structural and optical characterization of sol–gel derived boron doped Fe<Subscript>2</Subscript>O<Subscript>3</Subscript> nanostructured films

Pure and boron (B) doped iron oxide (Fe₂O₃) nanostructured thin films were prepared by sol–gel spin coating method. The effects of B (0.1, 0.2, 0.5 and 1 %) content on the crystallinity and morphological properties of Fe₂O₃ films were investigated by X-ray diffractometer and atomic force microscopy. X-ray diffraction patterns revealed that the Fe₂O₃ films have a rhombohedral crystalline phase of α-Fe₂O₃ phase (hematite) with nanostructure and their crystallite size (D) is changed from 27 ± 2 to 45 ± 5 nm with B dopant content. The minimum crystallite size value of 27 ± 2 nm was obtained for 0.2 % B doped Fe₂O₃ film. Carrying out UV–VIS absorption study for both doped and undoped films at room temperature, it was realized that allowed optical transitions may be direct or indirect transitions. The direct and indirect energy gap values for pure Fe₂O₃ were obtained to be 2.07 and 1.95 eV, respectively. The optical band gap value of the films was changed with 0.1 % B doping to reach 1.86 eV for direct band gap and 1.66 eV in case of indirect band gap.     

Interplay of Atomic Interactions in the Intermetallic Semiconductor Be5Pt

Semiconducting substances form one of the most important families of functional materials. However, semiconductors containing only metals are very rare. The chemical mechanisms behind their ground‐state properties are only partially understood. Our investigations have rather unexpectedly revealed the semiconducting behaviour (band gap of 190 meV) for the intermetallic compound Be₅Pt formed at a very low valence‐electron count. Quantum‐chemical analysis shows strong charge transfer from Be to Pt and reveals a three‐dimensional entity of vertex‐condensed empty Be₄ tetrahedrons with multi‐atomic cluster bonds interpenetrated by the framework of Pt‐filled vertex‐condensed Be₄ tetrahedrons with two‐atomic polar Be?Pt bonds. The combination of strong Coulomb interactions with relativistic effects results in a band gap.     

Two‐Dimensional Fullerene Assembly from an Exfoliated van der Waals Template

Two‐dimensional (2D) materials are commonly prepared by exfoliating bulk layered van der Waals crystals. The creation of synthetic 2D materials from bottom‐up methods is an important challenge as their structural flexibility will enable chemists to tune the materials properties. A 2D material was assembled using C₆₀ as a polymerizable monomer. The C₆₀ building blocks are first assembled into a layered solid using a molecular cluster as structure director. The resulting hierarchical crystal is used as a template to polymerize its C₆₀ monolayers, which can be exfoliated down to 2D crystalline nanosheets. Derived from the parent template, the 2D structure is composed of a layer of inorganic cluster, sandwiched between two monolayers of polymerized C₆₀. The nanosheets can be transferred onto solid substrates and depolymerized by heating. Electronic absorption spectroscopy reveals an optical gap of 0.25 eV, narrower than that of the bulk parent crystalline solid.     

Bandgap-Engineered Germanene Nanosheets as an Efficient Photodynamic Agent for Cancer Therapy

Two-dimensional (2D) monoelemental materials (Xenes) show considerable potential in bioapplications owing to their unique 2D physicochemical features and the favored biosafety resulting from their monoelemental composition. However, the narrow band gaps of Xenes prevent their broad applications in biosensors, bioimaging and phototherapeutics. In this study, it is demonstrated that 2D germanene terminated with −H via surface chemical engineering, shows a much broadened direct band gap of 1.65 eV, which enables the material to be used as a novel inorganic photosensitizer for the photodynamic therapy of singlet oxygen. Through theoretical analysis and in vitro studies, H-germanene nanosheets demonstrate a substantially enlarged band gap and favorable biodegradability, demonstrating a substantial cancer treatment capacity. This study demonstrates the feasibility of constructing novel therapeutic photodynamic agents by surface covalent engineering for catalytic tumor therapy.