快重离子辐照对非晶态SiO2薄膜光致发光谱的影响

用湿氧化法在单晶硅表面生长了非晶态SiO2薄膜,再用高能Pb和Xe离子对薄膜进行辐照,最后用荧光光谱分析了辐照参数(剂量、电子能损值)与发光特性改变的相关性.研究发现,快重离子辐照能显著影响薄膜的发光特性,进一步分析显示,辐照导致了SiO2薄膜内O-Si-O缺陷、缺氧缺陷和非桥式氧空位缺陷的产生,且缺氧缺陷和非桥式氧空...     

Comparison between MeV Ni and He ion-implanted planar optical waveguides in quartz

Optically polished crystalline quartz samples were implanted at room temperature by 2.6 MeV Ni⁺ ions with a dose of 9×10¹⁴ ions/cm² and 2.0 MeV He⁺ ions with a dose of 1.5×10¹⁶ ions/cm², respectively. A comparison of the MeV Ni⁺ ion-implanted planar waveguide formation was made with the MeV He⁺ ion-implanted one. The prism-coupling method was carried out to measure the dark modes in the quartz waveguides by using model 2010 prism coupler. Five modes were observed in the Ni⁺ implanted waveguide while 15 modes were found in the He⁺ ion-implanted one. Reflectivity calculation method was applied to fitting the refractive index profile. TRIM’98 (transport of ions in matter) code was used to simulate the damage profile in quartz by MeV Ni⁺ and He⁺ ions implantation, respectively. It is found that the refractive index profile in MeV Ni⁺ ions implanted waveguide is somewhat different in shape from that in MeV He⁺ ions implanted waveguide.     

He,Au离子辐照AuCu_3致元素表面偏析

采用磁控溅射方法在单晶硅(111)衬底上制备了AuCu_3薄膜,用2 MeV He离子和1 MeV Au离子对薄膜进行辐照,用卢瑟福背散射对He,Au离子辐照前后AuCu_3薄膜近表面的成分变化进行了分析,对不同离子辐照导致的表面元素偏析行为进行了研究.结果表明:当2 MeV He离子辐照时,随着辐照剂量增大,观察到样品近表面Au元素偏析的趋势;当1 MeV Au离子辐照时,随着辐照剂量增大,观察到样品近表面Cu元素偏析的趋势,与He离子辐照相反.通过对He,Au离子在样品中产生的靶原子空位及其分布分析,发现靶原子空位浓度分布的梯度是导致两种不同表面元素偏析趋势的原因,空位扩散是其中的主要机理.     

中能高浓度氦离子注入对钨微观结构的影响

采用15 keV, 剂量1×10¹⁷/cm², 温度为600 ℃氦离子注入钨, 分别以块体钨研究氦离子对钨的表面损伤; 以超薄的钨透射电镜样品直接注入氦离子, 研究该条件下钨的微观结构变化, 以了解氦离子与钨的相互作用过程; 采用扫描电子显微镜、聚焦离子束扫描显微镜、透射电子显微镜、高分辨透射电子显微镜等分析手段研究氦离子注入对钨表面显微结构的影响及氦泡在钨微观结构演化中的作用.     

Observation of the Damage on HOPG Surface Induced by Ar+8 Ions

Highly oriented pyrolytic graphite (HOPG) samples were bombarded by Ar+8 ions with energy range from 10.1 to 112MeV. After bombardment the sample surfaces were observed using a STM and NanoScope. The resultS show that the energetic ion could cause observable praotrusionlike damage on the HOPG surface.The relationship betWeen damage and energy loss, and the possible mechanism of damage process are discussed.     

Ar+8轰击石墨表面损伤的扫描隧道显微镜观测研究

报道了用10—112MeV能量的Ar+8离子轰击高定向石墨造成损伤的原子水平观测结果,给出了损伤形貌、损伤大小和损伤数密度.讨论了损伤与表面核能损的关系及损伤过程的可能机制.     

Surface defects created by low energy (20 < E < 240 eV) ion bombardment of Ge(001)

Surface defects created on Ge(001) exposed to low energy Xe ions are characterized by in situ scanning tunneling microscopy (STM). The temperature of the sample during ion bombardment is 165 C and ion energies range from 20 to 240 eV. The ion collisions create defects (vacancies and adatoms) which nucleate and form vacancy and adatom islands. For fixed total vacancy creation, the vacancy island number density increases with increasing ion energy: the vacancy island number density is 1.6 × 10⁻²⁰ cm⁻² for 40 eV ion bombardment and increases to 4.4 × 10⁻²⁰ cm⁻² for 240 eV ion bombardment. The increased nucleation rate for vacancies is attributed to clustering of defects. The sputtering yield of Ge(001) is also measured by STM. The sputtering yield for 20 eV ions is approximately 10⁻³ per ion but the net yield for surface defects (sum of adatoms and vacancies) is an order of magnitude higher, 10⁻², due to adatom-vacancy pair creation.     

Observation and study of latent tracks on the surface of HOPG induced by H ions

The topography and size of damage on the surface of HOPG (Highly Oriented Pyrolitic Graphite) bombarded by high fluence (1×10¹⁶ ions/cm²) of H⁺ ions were observed and studied. In this work, 457 STM images of each one with 9×9 nm² area were obtained. From 163 of these pictures visible damage was found. In these 163 STM images the diameter of most damage is from 0.2 to 0.8 nm. In this study the number density of visible damage is much less than the ion fluence. The probability of damage is only about 1.8×10⁻⁴. The possible mechanism of damage formation is also analyzed and discussed.     

Low sputter damage of metal single crystalline surfaces investigated with medium energy ion scattering spectroscopy

It was observed clearly that the sputter damage due to Ar⁺ ion bombardment on metal single crystalline surfaces is extremely low and the local surface atomic structure is preserved, which is totally different from semiconductor single crystalline surfaces. Medium energy ion scattering spectroscopy (MEIS) shows that there is little irradiation damage on the metal single crystalline surfaces such as Pt(111), Pt(100), and Cu(111), in contrast to the semiconductor Si(100) surfaces, for the ion energy of 3–7 keV even above 10¹⁶–10¹⁷ ions/cm² ion doses at room temperature. However, low energy electron diffraction (LEED) spots became blurred after bombardment. Transmission Electron Microscopy (TEM) studies of a Pt polycrystalline thin film showed formation of dislocations after sputtering. Complementary MEIS, LEED and TEM data show that on sputtered single-crystal metal surfaces, metal atoms recrystallize at room temperature after each ion impact. After repeated ion impacts, local defects accumulate to degrade long range orders.     

退火对Pb辐照Al2O3单晶发光特性的影响

研究了230MeV的²⁰⁸Pb²⁷⁺辐照Al₂O₃样品及随后在600,900,1100K高温条件下退火后的光致发光特性。从辐照样品的测试结果可以清楚地看到在波长为390,450nm处出现了强的发光峰。辐照量为1×10¹³ions/cm²时,样品的发光峰最强。经过600K退火2h后测试结果显示,380nm发光峰剧烈增强,而其他发光峰显示不明显。在900K退火条件下,380nm的发光峰开始减弱,而在360,510nm出现了明显的发光峰,至到1100K退火完毕后380nm的发光峰完全消失,而360,510nm的发光峰相对增强。从被辐照样品的FTIR谱中看到,波数在460~510cm^-1间的吸收是振动模式,经过离子辐照后,吸收带展宽,随着辐照量的增大,Al₂O₃振动吸收峰消失,说明Al₂O₃振动模式被完全破坏。1000~1300cm^-1之间为Al—O—Al桥氧的伸缩振动模式,辐照后吸收带向高波数方向移动,说明其振动模式受到影响。辐照剂量较小的样品,损伤程度相对较低,经退火晶化后,振动模式基本恢复到单晶状态;辐照剂量较高的样品,损伤程度大,退火处理后表面变得较粗糙,振动模式并未出现,说明结构破坏严重。     

高能重离子辐照的低活化钢硬化效应

为了探讨聚变堆候选低活化钢的抗辐照性能,在兰州重离子加速器国家实验室HIRFL的材料辐照终端,利用63 MeV的~(14)N离子和336 MeV的~(56)Fe离子在-50?C下对一种国产低活化钢进行辐照实验.借助离子梯度减能装置,使入射离子能量在0.22—6.17 MeV/u之间变化,从而在样品表面至24μm深度范围内产生0.05—0.20 dpa的原子离位损伤坪区.利用纳米压痕仪测试样品辐照前后的显微硬度,通过连续刚度测量(constant stiffness measurement)得到低活化钢硬度的深度剖面信息.使用Nix-Gao模型很好地描述了纳米压痕硬度随深度递减的现象(压痕尺寸效应,indentation size effect),从而有效避免了低能离子辐照的软基体效应(softer substrate effect).正电子湮灭寿命谱显示低活化钢在辐照之后长寿命成分增加,说明样品中产生了大量缺陷形成空位团,从而导致了材料力学性能的变化,在离子辐照剂量增加至0.2 dpa时,平均寿命τ_m增加量逐渐变慢,材料中辐照产生的缺陷趋于饱和.     

Surface defects,stress evolution,and laser damage enhancement mechanism of fused silica under oxygen-enriched condition

Oxygen ions (O⁺) were implanted into fused silica at a fixed fluence of 1×10¹⁷ ions/cm² with different ion energies ranging from 10 keV to 60 keV. The surface roughness, optical properties, mechanical properties and laser damage performance of fused silica were investigated to understand the effect of oxygen ion implantation on laser damage resistance of fused silica. The ion implantation accompanied with sputtering effect can passivate the sub-/surface defects to reduce the surface roughness and improve the surface quality slightly. The implanted oxygen ions can combine with the structural defects (ODCs and E' centers) to reduce the defect densities and compensate the loss of oxygen in fused silica surface under laser irradiation. Furthermore, oxygen ion implantation can reduce the Si-O-Si bond angle and densify the surface structure, thus introducing compressive stress in the surface to strengthen the surface of fused silica. Therefore, the laser induced damage threshold of fused silica increases and the damage growth coefficient decreases when ion energy up to 30 keV. However, at higher ion energy, the sputtering effect is weakened and implantation becomes dominant, which leads to the surface roughness increase slightly. In addition, excessive energy aggravates the breaking of Si-O bonds. At the same time, the density of structural defects increases and the compressive stress decreases. These will degrade the laser laser-damage resistance of fused silica. The results indicate that oxygen ion implantation with appropriate ion energy is helpful to improve the damage resistance capability of fused silica components.     

Modification of optical, chemical and structural response of CR-39 polymer by 50 MeV lithium ion irradiation

CR-39 polymer samples were irradiated with 50 MeV lithium ion beam; the fluence was varied in the range 10¹¹–10¹³ ionscm⁻². Irradiation effects were studied using UV–visible, FTIR spectroscopic and X-ray diffraction techniques. The observation of the recorded spectra shows that the detector is sensitive to swift ions irradiation and its UV absorption is influenced by the stopping power (dE/dx)_e. The FTIR spectra does not show any considerable changes due to the irradiation indicating that the detector is chemically stable. No appreciable change in the diffraction pattern of CR-39 polymer after irradiation upto the fluence level of 10¹³ ionscm⁻² is observed, showing its structural stability also.     

The primary target model of energetic ions penetration in thin botanic samples

The ion transmission spectra of very low current MeV H⁺ ions through two kinds of botanic samples, kidney bean slices and onion endocuticle, were carried out. The experimental spectra confirmed the botanic sample is inhomogeneous in mass density. A target model with local density approximation was suggested to describe the penetration of the energetic ions in such kind of materials. From the fitting of proton transmission spectra of two-energies, this target model was verified primarily. Including the influence of surface roughness and irradiation damage, this target model could be improved to predict the profile of penetration depth and range distribution of the energetic ions in the botanic samples.     

Effects of 230 MeV Au irradiation on Bi2Sr2CaCu2Ox

Bi₂Sr₂CaCu₂O_x tapes were irradiated using 230 MeV Au¹⁴⁺ ions. Columnar defects were presumably produced due to irradiation. Zero-field-cooling (ZFC) magnetization increased up to a fluence of 1.6 × 10¹¹ Au⁺/cm², but field-cooling (FC) magnetization decreased, indicating the strong pinning effects resulting from the columnar defects. The critical current density as well as the irreversibility field, obtained from the hysteresis loops, were enhanced. Irreversibility fields are fitted by H_irr = A exp(−T/T_A). An effective activation energy for flux motion was obtained from the measurements of magnetization relaxation. The features of flux pinning as a result of the columnar defects were compared with those of point defects brought about by 120 MeV O⁷⁺ irradiation.     

氦氢离子协同注入对锆膜形貌及物相结构的影响

采用磁控溅射法制备了Zr-Mo膜,随后在低能静电加速器上分别采用剂量为2.80×10¹⁷～1.12×10¹⁸ions·cm^-2的He⁺、H⁺离子辐照Zr-Mo膜,利用光学透镜、扫描电镜、原子力显微镜和X射线衍射研究He⁺、H⁺离子协同注入效应对Zr-Mo膜微观结构的影响。实验结果表明:原始Zr-Mo膜表层晶粒清晰可见,尺寸约为200nm;辐照效应可导致Zr-Mo膜表层产生微观损伤区域,在注He⁺基础上注H⁺导致Zr-Mo膜出现更为严重的损伤现象;离子注入的表面溅射效应可使膜面晶粒边界逐渐刻蚀退让,导致膜面更加光滑、细致;He⁺、H⁺离子协同注入可使Zr-Mo膜晶格发生畸变,注入期间未使Zr-Mo膜发生吸H相变生成氢化物。     

Magnetoresistance studies of MeV ranged H and C ion irradiated HOPG flakes

2 MeV protons and 1 MeV carbon ions are bombarded on highly oriented pyrolytic graphite (HOPG) samples and their electronic transport measurements are carried out in the presence of magnetic field. The Magneto-Resistance (MR) measurements show measurable hysteresis in the resistance value after ion beam irradiation for the in-plane magnetic field direction as well as for the out-of-plane field direction. The MR depends on the thickness of the flake and the method of its separation from the bulk HOPG. The results substantiate that the ferromagnetic coupling between the magnetic moments at the vacancy defect sites in HOPG sensitively depends on the average defect separation. The average defect separation range of 1.7–0.5 nm allows only a part of the 40 μm thick proton beam irradiated sample to go for ferromagnetic ordering. Similar conclusions are drawn from carbon ion irradiated HOPG flake. The irradiation increases the resistance of the flake as well.     

56Fe13+离子引起GaP晶体的微结构损伤

利用X射线衍射（XRD）技术、傅里叶变换红外光谱（FTIR）和Raman光谱对经不同剂量的56Fe13+离子辐照的GaP晶体的微结构进行了表征。结果表明:随着辐照离子剂量的增加,GaP晶体中产生了局部的无序与缺陷。随着56Fe13+离子剂量的增加,Raman光谱展示出振动峰强度逐渐减弱而且一些逐渐消失,但其峰位几乎没有发生变化;XRD显示出GaP晶体的衍射峰的强度逐渐减小;FTIR主要表现为宽化及其强度增加。这表明重离子56Fe13+的辐照使得GaP晶体中的缺陷与无序性增加,导致晶体产生了局部的非晶化。The Misconstructural damage of GaP irradiated with 56Fe13+ to fluences ranging from 1×107 ions/cm2~1×1010 ions/cm2 were analyzed by X-ray diffraction (XRD) techniques, Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy. The result shows that, with the increase of irradiation ion fluences, local disorder and defects were produced in GaP crystal. With the increase of ion fluence, Raman spectra reveal the intensity of scattering peaks gradually weakens and some scattering peaks gradually disappear, however no changes in the peak position were found. XRD measurement displays that the intensity of diffraction peaks gradually decreases with an increase in ions fluences. Result from FTIR spectra exhibits that the intensity of reflection peaks gradually increases and the FWHM of reflection peaks broadens. These phenomena indicate that, the irradiation of heavy-ion Fe produces defects and disorder in GaP crystal, leading to a local amorphization.     

超强激光与固体气体复合靶作用产生高能氦离子

激光氦离子源产生的MeV能量的氦离子因有望用于聚变反应堆材料辐照损伤的模拟研究而得到关注.目前激光驱动氦离子源的主要方案是采用相对论激光与氦气射流作用加速高能氦离子,但这种方案在实验上难以产生具有前向性和准单能性、数MeV能量、高产额的氦离子束,而这些氦离子束特性是材料辐照损伤研究中十分关注的.不同于上述激光氦离子产生方法,我们提出了一种利用超强激光与固体-气体复合靶作用产生氦离子的新方法.利用这种方法,在实验上,采用功率密度5×10~(18)W/cm~2的皮秒脉宽的激光脉冲与铜-氦气复合靶作用,产生了前向发射的2.7 MeV的准单能氦离子束,能量超过0.5 MeV的氦离子产额约为10~(13)/sr.二维粒子模拟显示,氦离子在靶背鞘场加速和类无碰撞冲击波加速两种加速机理共同作用下得到加速.同时粒子模拟还显示氦离子截止能量与超热电子温度成正比.     

MeV Al+ and Al2+ ions implantation in Si(100): surface roughness and defects in the bulk

This paper deals with the implantation of high-energy (1.0–3.0 MeV) atomic and molecular Al⁺ ions in Si(100) to a fluence of 5×10¹⁴ Al atoms/cm² at room temperature. The molecular effect, i.e. the increase of the displacement yield compared with the sum of the atomic yields, and the damage formation as well as defect behaviour after annealing have been investigated. A detailed experimental study has been made of the evolution of extended secondary defects which form during thermal anneals of Al⁺ or Al₂ ⁺ irradiated silicon. The samples have been examined using combined Rutherford backscattering and channeling experiments together with transmission electron microscopy observations. The surface structure of the implanted wafers has been measured by atomic force microscopy. The results for the implantation-induced roughness at the Si surface, resulting from Al⁺ or Al₂ ⁺ irradiation at the same energy/atom, total atomic fluence, flux rate, and irradiation temperature, are presented and discussed. Received: 19 August 1999 / Accepted: 20 October 1999 / Published online: 23 February 2000