The rotational spectra, potential function, Born-Oppenheimer breakdown, and magnetic shielding of SnSe and SnTe

The pure rotational spectra of 27 isotopic species of SnSe and SnTe have been measured in the frequency range of 5-24 GHz using a Fabry-Perot-type resonator pulsed-jet Fourier-transform microwave spectrometer. Gaseous samples of both chalcogenides were prepared by laser ablation of suitable target rods and were stabilized in supersonic jets of Ar. Global multi-isotopolog analyses of all available high-resolution data produced spectroscopic Dunham parameters Y01, Y11, Y21, Y31, Y02, and Y12 for both species, as well as Born-Oppenheimer breakdown (BOB) coefficients delta01 for Sn, Se, and Te. A direct fit of the same data sets to an appropriate radial Hamiltonian yielded analytic potential energy functions and BOB radial functions for the X 1Sigma+ electronic state of both SnSe and SnTe. Additionally, the magnetic hyperfine interaction produced by the dipolar nuclei 119Sn, 117Sn, 77Se, and 125Te was observed, yielding first determinations of the corresponding spin-rotation coupling constants.     

Pure rotational spectra of PbSe and PbTe: potential function, Born-Oppenheimer breakdown, field shift effect and magnetic shielding

The pure rotational spectra of 41 isotopic species of PbSe and PbTe have been measured in their X 1Sigma+ electronic state with a resonator pulsed-jet Fourier transform microwave spectrometer. The molecules were prepared by laser ablation of suitable target rods and stabilised in supersonic jets of noble gas. Global multi-isotopologue analyses yielded spectroscopic Dunham parameters Y01, Y11, Y21, Y31, Y02, and Y12 for both species, as well as effective Born-Oppenheimer breakdown (BOB) coefficients delta01 for Pb, Se and Te. Unusual large values of the BOB parameters for Pb have been rationalized in terms of finite nuclear size (field shift) effect. A direct fit of the same data sets to an appropriate radial Hamiltonian yielded analytic potential energy functions and BOB radial functions for the X 1Sigma+ electronic state of both PbSe and PbTe. Additionally, the magnetic hyperfine interactions produced by the uneven mass number A nuclei 207Pb, 77Se, 123Te, and 125Te were observed, yielding first determinations of the corresponding nuclear spin-rotation coupling constants.     

Vapor-liquid-solid and vapor-solid growth of phase-change Sb2Te3 nanowires and Sb2Te3/GeTe nanowire heterostructures

We report the synthesis and characterization of radial heterostructures composed of an antimony telluride (Sb2Te3) core and a germanium telluride (GeTe) shell, as well as an improved synthesis of Sb2Te3 nanowires. The synthesis of the heterostructures employs Au-catalyst-assisted vapor-liquid-solid (VLS) and vapor-solid (VS) mechanisms. Energy-dispersive X-ray spectrometry indicates that Sb and Ge are localized in the Sb2Te3 and GeTe portions, respectively, confirming the alloy-free composition in the core/shell heterostructures. Transmission electron microscopy and diffraction studies show that Sb2Te3 and GeTe regions exhibit rhombohedral crystal structure. Both Sb2Te3 and GeTe grow along the [110] direction with an epitaxial interface between them. Electrical characterization of individual nanowires and nanowire heterostructures demonstrates that these nanostructures exhibit memory-switching behavior.     

Importance of solution equilibria in the directed assembly of metal chalcogenide mesostructures

We describe the new nanostructured Pt/Ge/Se materials prepared from the molecular units [Ge2Se6](4-) and [GeSe4](4-) and linking Pt(2+) ions in the presence of surfactant micelles. X-ray diffraction coupled with transmission electron microscopy images reveals hexagonal pore symmetry. The solvent dependence and solution speciation of these building blocks were investigated by means of multinuclear NMR spectroscopy and by fast atom bombardment (FAB) mass spectroscopy and it is shown that rapid exchange equilibrium is reached between species like [Ge4Se10](4-), [Ge2Se6](4-), and [GeSe4](4-) in both water and formamide. This results in multiple Ge/Se anions being incorporated in the mesostructured materials which is supported by Raman and IR spectroscopic data. It is likely that the presence of multiple building units both in water and formamide solutions favors the assembly of mesostructured metal chalcogenides with good pore order. Systematic variation of both surfactant headgroup and chain length modulates the optoelectronic properties of the mesostructures. The Pt/Ge/Se materials show sharp band gap transitions in the range of 1.24-1.97 eV. Finally, the materials exhibit reversible ion-exchange properties and a marked inorganic framework flexibility that enables a contraction-expansion process in response to the exchange. The Pt/Ge/Se framework possesses a very high surface area as estimated by small-angle X-ray scattering techniques.     

Synthesis and characterization of Ge2Sb2Te5 nanowires with memory switching effect

Ge2Sb2Te5 nanowires (NWs) were synthesized by vaporizing GeTe, Sb, and Te precursors assisted by metal catalysts. Current-voltage measurement of the Ge2Sb2Te5 NW device displays fast and reversible switching between two distinct resistive states, which is due to the crystalline-amorphous phase transition nature of these materials     

Strontium selenogermanate(III) and barium selenogermanate(II,IV): synthesis, crystal structures, and chemical bonding

The new selenogermanates Sr2Ge2Se5 and Ba2Ge2Se5 were synthesized by heating stoichiometric mixtures of binary selenides and the corresponding elements to 750 degrees C. The crystal structures were determined by single-crystal X-ray methods. Both compounds adopt previously unknown structure types. Sr2Ge2Se5 (P2(1)/n, a = 8.445(2) A, b = 12.302 A, c = 9.179 A, beta = 93.75(3) degrees, Z = 4) contains [Ge4Se10]8- ions with homonuclear Ge-Ge bonds (dGe-Ge = 2.432 A), which may be described as two ethane-like Se3Ge-GeSeSe2/2 fragments sharing two selenium atoms. Ba2Ge2Se5 (Pnma, a = 12.594(3) A, b = 9.174(2) A, c = 9.160(2) A, Z = 4) contains [Ge2Se5]4- anions built up by two edge-sharing GeSe4 tetrahedra, in which one terminal Se atom is replaced by a lone pair from the divalent germanium atom. The alkaline earth cations are arranged between the complex anions, each coordinated by eight or nine selenium atoms. Ba2Ge2Se5 is a mixed-valence compound with GeII and GeIV coexisting within the same anion. Sr2Ge2Se5 contains exclusively GeIII. These compounds possess electronic formulations that correspond to (Sr2+)2(Ge3+)2(Se2-)5 and (Ba2+)2- Ge2+Ge4+(Se2-)5. Calculations of the electron localization function (ELF) reveal clearly both the lone pair on GeII in Ba2Ge2Se5 and the covalent Ge-Ge bond in Sr2Ge2Se5. Analysis of the ELF topologies shows that the GeIII-Se and GeIV-Se covalent bonds are almost identical, whereas the GeII-Se interactions are weaker and more ionic in character.     

Zustandsbarogramm und thermodynamische Daten für das System Germanium – Tellur

Barogram and Thermodynamic Data of the System Germanium—Tellurium The barogram Ge? Te is constructed by total pressure measurements. From the temperature function of the pressure of GeTe follows the thermodynamic data of sclid and gaseous GeTe and gaseous GeTe₂. The data are proved by chemical transport experiments of Ge with Tellurium.     

Electrochemical determination of thermodynamic properties of saturated solid solutions of Hg2GeSe3, Hg2GeSe4, Ag2Hg3GeSe6, and Ag1.4Hg1.3GeSe6 compounds in the Ag–Hg–Ge–Se system

Journal of Solid State Electrochemistry - Triangulation of the Ag–Hg–Ge–Se system in the vicinity of GeSe2, HgSe, Hg2GeSe3, Hg2GeSe4, Ag2Hg3GeSe6, and Ag1.4Hg1.3GeSe6 compounds...     

Synthesis of a family of solids through the building-block approach: a case study with Ag(+) substitution in the ternary Na-Ge-Se system

A new family of Ag-substituted pseudoquaternary alkali-seleno-germanates has been synthesized by two solid-state routes: the conventional flux method and metathesis. This family includes a series of semiconductors with varying amounts of Ag+ substituted for Na+ in Na8Ge4Se10 to form AgxNa(8-x)Ge4Se10, [x = 0.31 (I), 0.67 (II), 0.77 (III), 0.87 (IV), 1.05 (V), 1.09 (VI)] and another phase with a different composition AgxNa(6-x)Ge2Se7 (x = 1.76), VII, related to Na6Ge2Se7. In I-VI, Ge4Se10(8-) constitutes a 6-membered chairlike unit with a Ge-Ge bond, while in VII, a corner-shared dimer of GeSe4 tetrahedra (Ge2Se76-) acts as the building unit. The single-crystal structure analysis indicates that there is a phase transition from P to C2/c, in changing from pure Na8Ge4Se10 to AgxNa(8-x)Ge4 Se10 (I-VI), while there is no phase transition between pure Na6Ge2Se7 and AgxNa(6-x)Ge2Se7 (x = 1.76). The structures of I-VI may be described in terms of layers of cubic close-packed Se2- anions. In between the Se layers, octahedral holes fully occupied by Na+ and mixed Ag+/Na+ cations alternate with layers formed of octahedral holes fully occupied by Na+ and Ge26+ cations. Two adjacent Ge26+ cations form a chairlike Ge4Se10(8-) anion in which Ge-Ge bonds are oriented almost parallel to the Se layers. In contrast, VII does not have close-packed anions. Corner-shared GeSe4 tetrahedra (Ge2Se7(6-) dimer) and AgSe4 tetrahedra form layers that are cross-linked by Na/AgSe4 tetrahedra to form a 3-dimensional (3-D) structure. An optical property investigation indicates a red shift in the band gap of AgxNa(8-x)Ge4Se10 (x = 0.67)(II) as compared to that of pure Na8Ge4Se10. Raman data also indicate a red shift of the Ge-Se stretching mode in the Ag+-substituted phase II (x = 0.67) compared to that of Na8Ge4Se10.     

Chemical routes to GeS2 and GeSe2 nanowires

Nanowires of GeS(2) and GeSe(2) have been obtained by novel chemical routes involving the decomposition of organo-ammonium precursors containing super-tetrahedral Ge(4)S(10) and the dimeric Ge(2)Se(6) units.     

Glass-forming ability in the GeSbTeSe quaternary system

The glass—forming regions in the quaternary system GeSbTeSe have been obtained for quenching in air and for a constant cooling rate of 5°C min^?1. The boundaries of the glass-forming regions and the thermal behaviour of the samples have been deduced from differential thermal analysis and X-ray diffraction. The results may be compared with some limited determinations of glass-forming ability in TeSe, GeTe, GeTeSe and GeSbSe systems, allowing for the fact that in the present work the experimental parameters for preparing and quenching the melts are identical for all the compositions studied. The formation and stability of glasses is discussed in terms of the obtained glass-forming regions and the observed thermal behaviour in differential thermal analysis measurements. Potential-device quality memory and switching compositions are suggested.     

The influence of nuclear volume and electronic structure on the rotational energy of platinum monoxide, PtO

The pure rotational spectra of seven isotopic species of platinum monoxide have been measured with a cavity pulsed jet Fourier-transform microwave spectrometer. The molecules were prepared by laser ablation of Pt foil in the presence of O2 and stabilized in a supersonic jet of argon. A multi-isotopomer Dunham-type analysis of the spectra produced values for Y01 and Y11, along with unusually large values for Born-Oppenheimer breakdown (BOB) parameters for both Pt and O atoms. The values of the BOB parameters have been rationalized in terms of the molecular electronic structure and finite nuclear size (field shift) effects. A large negative 195Pt effective nuclear spin-rotation constant has been rationalized in terms of the electron-nucleus dipole-dipole hyperfine constant. Precise internuclear separations have been evaluated.     

Internuclear distance and effects of Born-Oppenheimer breakdown for PtS, determined from its pure rotational spectrum

Platinum monosulfide PtS has been prepared in its X0(+) ground electronic state by laser ablation of Pt in the presence of H(2)S. The rotational spectra of eight isotopic species have been measured with a cavity pulsed jet Fourier-transform microwave spectrometer. Spectral analysis using a multi-isotopomer Dunham-type expression produced values for Y(01), Y(02), Y(11), and Y(21), along with large values for Born-Oppenheimer breakdown (BOB) parameters for both atoms of the molecule. The BOB parameters are rationalized in terms of the molecular electronic structure and nuclear field shift effects. A large negative (195)Pt nuclear spin-rotation constant has been rationalized in terms of the electron-nucleus dipole-dipole hyperfine constant. The equilibrium bond length in the Born-Oppenheimer approximation has been evaluated.     

Ternary Mn/Ge/Se anions from reactions of [Ba2(H2O)9][GeSe4]: synthesis and characterization of compounds containing discrete or polymeric [Mn6Ge4Se17]6- units

[Ba2(H2O)9][GeSe4] is suitable for the formation of novel M/14/16 anions [Mn6Ge4Se17]6- --discrete or linked in an as yet unprecedented porous network--with antiferromagnetically coupled Mn(II) centers and relatively small electronic excitation energies.     

High Thermoelectric Performance of New Rhombohedral Phase of GeSe stabilized through Alloying with AgSbSe2

GeSe is a IV–VI semiconductor, like the excellent thermoelectric materials PbTe and SnSe. Orthorhombic GeSe has been predicted theoretically to have good thermoelectric performance but is difficult to dope experimentally. Like PbTe, rhombohedral GeTe has a multivalley band structure, which is ideal for thermoelectrics and also promotes the formation of Ge vacancies to provide enough carriers for electrical transport. Herein, we investigate the thermoelectric properties of GeSe alloyed with AgSbSe₂, which stabilizes a new rhombohedral structure with higher symmetry that leads to a multivalley Fermi surface and a dramatic increase in carrier concentration. The zT of GeAg_0.2Sb_0.2Se_1.4 reaches 0.86 at 710 K, which is 18 times higher than that of pristine GeSe and over four times higher than doped orthorhombic GeSe. Our results open a new avenue towards developing novel thermoelectric materials through crystal phase engineering using a strategy of entropy stabilization of high‐symmetry alloys.     

Destruction of noncentrosymmetry through chalcogenide salt inclusion

A salt-inclusion samarium selenogermanate compound, NaSmGeSe4 x 0.25 Na2Se was isolated from a reaction of Na2Se, Sm, GeSe2, and Se. The new structure consists of isolated GeSe4 units and bicapped trigonal-prismatic SmSe8, which are linked together to form corrugated anionic layers. The topology of the layer is similar to the well-known layered compounds ALnQE4 (A = K, Rb, Cs; Ln = lanthanide ions; Q = Si, Ge; E = S, Se) with some subtle differences. A selenide anion and Na cations in the interlayer space form interesting structures where Se-centered trigonal-prismatic polyhedra of SeNa6 are edge-shared and pass through a twofold rotation axis. Hence, this compound crystallizes in a centrosymmetric space group in contrast to the noncentrosymmetric structures adopted by the ALnQE4 series of compounds. Raman and diffuse-reflectance spectra were also analyzed for the title compound.     

Unexpected Ge–Ge Contacts in the Two‐Dimensional Ge4Se3Te Phase and Analysis of Their Chemical Cause with the Density of Energy (DOE) Function

A hexagonal phase in the ternary Ge–Se–Te system with an approximate composition of GeSe_0.75Te_0.25 has been known since the 1960s but its structure has remained unknown. We have succeeded in growing single crystals by chemical transport as a prerequisite to solve and refine the Ge₄Se₃Te structure. It consists of layers that are held together by van der Waals type weak chalcogenide–chalcogenide interactions but also display unexpected Ge–Ge contacts, as confirmed by electron microscopy analysis. The nature of the electronic structure of Ge₄Se₃Te was characterized by chemical bonding analysis, in particular by the newly introduced density of energy (DOE) function. The Ge–Ge bonding interactions serve to hold electrons that would otherwise go into antibonding Ge–Te contacts.     

Controlled Synthesis of Se/Te Alloy and Te Nanowires

"Se/Te alloy and Te nanowires (NWs) with different morphologies were synthesized through a novel, control-lable solution-phase method. Sodium dodecylbenzene sulfonate was employed as a surfactant to control the reaction rate in the synthesis. Through reaction process dynamics control, both "bending" and "V-shaped" Se/Te alloy NWs were controllably produced. The phase structures and morphologies of the Se/Te and Te products were investigated with XRD, TEM, and HRTEM. The formation mechanisms of the NWs were investigated on the basis of the experimental results. The significance of these results lies in the important implications concerning the potential use of these NWs materials for nanoscale electronic devices."     

BaGa2MQ6 (M = Si, Ge; Q = S, Se): a new series of promising IR nonlinear optical materials

The four compounds BaGa(2)MQ(6) (M = Si, Ge; Q = S, Se) have been identified as a new series of IR nonlinear optical (NLO) materials and are promising for practical applications. They are isostructural and crystallize in the noncentrosymmetric polar space group R3 of the trigonal system. Their three-dimensional framework is composed of corner-sharing (Ga/M)Q(4) (M = Si, Ge; Q = S, Se) tetrahedra with Ba(2+) cations in the cavities. The polar alignment of one (Ga/M)-Q2 bond for each (Ga/M)Q(4) tetrahedra along the c direction is conducive to generating a large NLO response, which was confirmed by powder second-harmonic generation (SHG) using a 2090 nm laser as fundamental wavelength. The SHG signal intensities of the two sulfides were close to that of AgGaS(2) and those for the two selenides were similar as that of AgGaSe(2). The large band gaps of 3.75(2) eV, 3.23(2) eV, 2.88(2) eV, and 2.22 (2) eV for BaGa(2)SiS(6), BaGa(2)GeS(6), BaGa(2)SiSe(6), and BaGa(2)GeSe(6), respectively, will be very helpful to increase the laser damage threshold. Moreover, all the four BaGa(2)MQ(6) (M = Si, Ge; Q = S, Se) compounds exhibit congruent-melting behavior, which indicates that bulk crystals needed for practical applications can be obtained by the Bridgman-Stockbarger method. The calculated birefringence indicates that these materials may be phase-matchable in the IR region and the calculated SHG coefficients agree with the experimental observations. According to our preliminary study, the BaGa(2)MQ(6) compounds represent a new series of promising IR nonlinear optical (NLO) materials which do not belong to the traditional chalcopyrite-type materials such as AgGaQ2 (Q = S, Se) and ZnGeP(2).     

Single structure widely distributed in a GeTe-Sb2Te3 pseudobinary system: a rock salt structure is retained by intrinsically containing an enormous number of vacancies within its crystal

GeTe(1-x)-Sb2Te3(x) sputtered amorphous film was crystallized into a simple NaCl-type structure through instantaneous laser irradiation over a wide composition range from x = 0 to at least 2/3. When the ratio of Sb2Te3 increases, a vacancy is generated at every Na site for two Sb atoms. The fraction of vacancies, v(x), changes according to x/(1 + 2x), and the cubic root unit cell volume varies with a strong correlation to v(x). Through these created vacancies, valence electrons provided by adjacent Ge/Sb and Te atoms remain constant regardless of the composition, ensuring that these electrons occupy predominantly the bonding molecular orbitals. This results in crystal chemical stability, with the closed shell p-p bondings in the valence electrons arranging the crystal's atomic configuration into an NaCl-type structure.