共查询到17条相似文献,搜索用时 46 毫秒
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GaN薄膜的蓝光和红光发射机理研究 总被引:6,自引:3,他引:3
由于生长工艺的不完善,非掺杂GaN薄膜中通常存在未知的杂质和缺陷,产生与这些未知杂质和缺陷能级相关的发光。报道了非掺杂GaN薄膜的692nm红色发光.并研究了非掺杂GaN薄膜的蓝、红色发光的发射机理;利用作者提出的吸收归一化光致发光激发光谱,直接测量出了非掺杂GaN薄膜的蓝、红色发光的初始态能级,确定蓝色发光为施主-价带跃迁复合,而红色发光为施主-受主跃迁复合;给出了黄、蓝、红光的发射模型。所取得的结果对于确定未知杂质和缺陷的种类具有重要的参考价值。 相似文献
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采用MOCVD技术在图形化硅衬底上生长了InGaN/GaN多量子阱黄光LED外延材料,研究了不同的量子阱生长气压对黄光LED光电性能的影响。使用高分辨率X射线衍射仪(HRXRD)和荧光显微镜(FL)对晶体质量进行了表征,使用电致发光系统积分球测试对光电性能进行了表征。结果表明:随着气压升高,In的并入量略有降低且均匀性更好,量子阱中的点缺陷数目降低,但是阱垒间界面质量有所下降。在实验选取的4个气压4,6.65,10,13.3 kPa下,外量子效率最大值随着量子阱生长气压的上升而显著升高,分别为16.60%、23.07%、26.40%、27.66%,但是13.3 kPa下生长的样品在大电流下EQE随电流droop效应有所加剧,在20 A·cm-2的工作电流下,样品A、B、C、D的EQE分别为16.60%、19.77%、20.03%、19.45%,10 kPa下生长的量子阱的整体光电性能最好。 相似文献
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采用光致发光谱、光致发光激发谱以及拉曼光谱对GaN基量子阱材料进行了实验观察和分析 .实验结果表明样品中量子点结构不均匀及InGaN层中In成分分布不均匀 ,且其光致发光谱的波峰是由自由激子辐射复合发光引起的 .同时由室温下InGaN/GaN量子阱的拉曼谱可得知InGaN/GaN多量子阱的结构特征 相似文献
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This paper reports that the yellow luminescence intensity of N-polar GaN Epi-layers is much lower than that of Ga-polar ones due to the inverse polarity,and reduces drastically in the N-polar unintentionally-doped GaN after etching in KOH solution.The ratio of yellow luminescence intensity to band-edge emission intensity decreases sharply with the etching time.The full width at half maximum of x-ray diffraction of(10-12) plane falls sharply after etching,and the surface morphology characterized by scanning electron microscope shows a rough surface that changes with the etching time.The mechanism for the generation of the yellow luminescence are explained in details. 相似文献
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Zeng Zhang Rong Zhang ZiLi Xie Bin Liu XiangQian Xiu RuoLian Jiang Ping Han ShuLin Gu Yi Shi YouDou Zheng 《中国科学G辑(英文版)》2008,51(8):1046-1052
The surface morphology, electrical properties and optical properties of Si doped n-type GaN were investigated. The intentional
SiH4 doped GaN films were grown by metal organic chemical vapor deposition with the electron concentration varying from 3×1016 cm−3 to 5.4×1018 cm−3. The surface morphology shows that the roughness and dislocation pits increase as the mass flow rate of SiH4 increases, which indicates that the quality of GaN degrades gradually. The activation energy of Si in GaN with different
n concentrations varies from 12 to 22 meV, which may originate from the interactions of donor wave functions. The carrier transport
mechanism with increasing temperature from 100 to 420 K was concluded as the complex effect of both impurity scattering and
phonon scattering. The position of the near band edge emission peak was determined by both renormalization of the band gap
and B-M effect. The intensity variations of the yellow luminescence could be explained by the change of Ga vacancy concentration
caused by Si doping.
Supported by the National Basic Research Program of China (Grant No. 2006CB6049), the National Hi-Tech Research and Development
Program of China (Grant No. 2006AA03A142), the National Natural Science Foundation of China (Grant Nos. 60721063, 60731160628
and 60676057), the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20050284004) and the Natural
Science Foundation of Jiangsu Province of China (Grant No. BK2005210) 相似文献
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Luminescence of a GaN grain with a nonpolar and semipolar plane in relation to microstructural characterization 下载免费PDF全文
We report on the growth of the high-quality GaN grain on a r-plane sapphire substrate by using a self-organized SiN interlayer as a selective growth mask.Transmission electron microscopy,scanning electron microscopy,and Raman spectroscopy are used to reveal the effect of SiN on the overgrown a-plane GaN growth.The SiN layer effectively terminates the propagation of the threading dislocation and basal plane stacking faults during a-plane GaN regrowth through the interlayer,resulting in the window region shrinking from a rectangle to a "black hole".Furthermore,strong yellow luminescence(YL) in the nonpolar plane and very weak YL in the semipolar plane on the GaN grain is revealed by cathodoluminescence,suggesting that C-involved defects are responsible for the YL. 相似文献
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Limin Zhang Xiaodong Zhang Wei You Zhen Yang WenXiu Wang Qing Ge Zhengmin Liu 《Central European Journal of Physics》2008,6(2):283-288
The effects of Si, O, C and N ion implantation with different implantation doses on yellow luminescence (YL) of GaN have been
investigated. The as-grown GaN samples used in the work were of unintentional doped n-type, and the photoluminescence (PL)
spectra of samples had strong YL. The experimental results showed that YL of ion implanted samples exhibited marked reductions
compared to samples with no implantation, while the near band edge (NBE) emissions were reduced to a lesser extent. The deep-level
centers associated with YL may be produced in GaN films by O and C ion implantation, and identities of these deep-level centers
were analyzed. It was also found that the dose dependence of YL was analogous with the one of the intensity ratios of YL to
the near band edge (NBE) emission (I
YL
/I
NBE
) for ion implanted samples. The possible reason for this comparability has been proposed.
相似文献
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利用金属有机化合物气相外延沉积技术在2inch(5.08cm)Si(111)图形衬底上生长了GaN外延薄膜,在Al组分渐变AlGaN缓冲层与GaN成核层之间引入了AlN插入层,研究了AlN插入层对GaN薄膜生长的影响。结果表明,随着AlN插入层厚度的增加,GaN外延膜(002)面与(102)面X射线衍射摇摆曲线半峰全宽明显变小,晶体质量变好,同时外延膜在放置过程中所产生的裂纹密度逐渐减小直至不产生裂纹。原因在于AlN插入层的厚度对GaN成核层的生长模式有明显影响,较厚的AlN插入层使GaN成核层倾向于岛状生长,造成后续生长的nGaN外延膜具有更多的侧向外延成分,从而降低了GaN外延膜中的位错密度,减少了GaN外延膜中的残余张应力。同时还提出了一种利用荧光显微镜观察黄带发光形貌来表征GaN成核层形貌和生长模式的新方法。 相似文献
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利用扫描电子显微镜(SEM)观察了气相外延GaN:Zn晶片的表面形貌、Zn浓度分布和阴极射线发光微区光谱及其MIS结构的电致发光微区光谱。研究表明,Zn杂质掺入GaN可以形成四种能量位置的发光中心;它们的形成与Zn浓度和晶体的微区结构有关;二者的不均匀决定了发光的不均匀性。 相似文献
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采用磁控共溅射技术制备了铒铥共掺杂氧化锌发光薄膜. 通过优化退火温度, 实现了薄膜的近红外 平坦宽带发射, 总带宽可达到~ 500 nm, 覆盖了光通信S+C+L+U 区波段. 此发射带由Er3+ 的1535 nm (4I13/2 → 4I15/2) 发射峰及Tm3+ 的1460 nm (3H4 → 3F4), 1640 nm (1G4 → 3F2), 1740 nm (3F4 → 3H6) 发射峰组成. 研究表明: 退火温度低于800 ℃ 时, 没有观察到薄膜样品明显的光致发光现象; 随着退火温度 从800 ℃ 升高到1000 ℃, I1640/I1535 发射峰强度比从0.2 升高到0.3, I1740/I1535 发射峰强度比从0.5 降低 到0.4, 发射峰强度比均基本保持稳定; 当退火温度高于1000 ℃ 时, I1640/I1535 发射峰强度比从0.3 升高到 0.6, I1740/I1535 发射峰强度比从0.4 升高到0.8, 发射峰强度比均急剧增加. 变温行为表明: 随着温度从10 K 逐渐升高到300 K, 谱线的总带宽基本不变, 在340—360 nm 之间; Tm3+ 在1640 和1740 nm 处的发射峰强度 分别降低了2/3 和1/2, Er3+ 在1535 nm 的发射峰强度增大了1.2 倍. 这是因为随着温度的升高, 声子数目增 多, Er3+ 与Tm3+ 离子之间发生能量传递的概率不断变大, 并且在Tm3+ 离子之间没有发生交叉弛豫现象. 相似文献