Bismuth telluride topological insulator nanosheet saturable absorbers for q‐switched mode‐locked Tm:ZBLAN waveguide lasers

Nanosheets of bismuth telluride (Bi₂Te₃), a topological insulator material that exhibits broadband saturable absorption due to its non‐trivial Dirac‐cone like energy structure, are utilized to generate short pulses from Tm:ZBLAN waveguide lasers. By depositing multiple layers of a carefully prepared Bi₂Te₃ solution onto a glass substrate, the modulation depth and the saturation intensity of the fabricated devices can be controlled and optimized. This approach enables the realization of saturable absorbers that feature a modulation depth of 13% and a saturation intensity of 997 kW/cm². For the first time to our knowledge, Q‐switched mode‐locked operation of a linearly polarized mid‐IR ZBLAN waveguide chip laser was realized in an extended cavity configuration using the topological insulator Bi₂Te₃. The maximum average output power of the laser is 16.3 mW and the Q‐switched and mode‐locked repetition rates are 44 kHz and 436 MHz, respectively.     

Characterization of laser processing of single‐crystal natural diamonds using micro‐Raman spectroscopic investigations

The application of lasers for processing diamond has revolutionized the diamond industry and its applications in microelectronics, microelectromechanical system (MEMS) and microoptoelectromechanical system (MOEMS) technologies. The process quality can be evaluated using spectroscopic techniques. In the present investigation, four different types of Q‐switched solid‐state lasers (with different beam parameters), namely, a lamp‐pumped Nd:YAG laser operating at 1064 nm, a lamp‐pumped Nd:YAG laser operating at second harmonically generated 532 nm, a diode‐pumped Nd:YVO₄ laser operating at 1064 nm and a diode‐pumped Nd:YAG laser operating at 1064 nm, have been employed for the processing of a single‐crystal, gem‐quality, natural diamond. The main objective behind the selection of these lasers with different beam parameters was to study the effect of wavelength, pulse width, pulse energy, peak power and beam quality factor (M² factor) on various aspects of processing (such as microcracking, material loss and cut surface quality) and their relative merits and demerits. The overall weight loss of the diamond and formation of microcracks during processing have been studied for the above four cases. The characteristics of the graphite formed during processing, elemental analysis, surface morphology of the cut surface and process dynamics have been studied using micro‐Raman spectroscopy and scanning electron microscopy (SEM). We observed that laser cutting of single‐crystal diamonds used for industrial applications can be accomplished without microcracking or surface distortion using Q‐switched Nd:YAG lasers. This allows direct processing without extensive postgrinding and polishing stages. Very efficient diamond processing is possible using diode‐pumped lasers, which results in the lowest possible breakage rate, good accuracy, good surface finish and low weight loss. From the micro‐Raman and SEM studies, it is concluded that the surface quality obtained is superior when diode‐pumped Nd:YVO₄ laser is used, owing to its extremely high peak power. The maximum graphite content is observed while processing with lamp‐pumped Nd:YAG laser at 532 nm. An overall comparison of all the laser sources leads to the conclusion that diode‐pumped Nd:YAG laser is a superior option for the efficient processing of natural diamond crystals. Copyright © 2006 John Wiley & Sons, Ltd.     

Attosecond‐precision ultrafast photonics

We review our recent progress toward attosecond‐precision ultrafast photonics based on ultra‐low timing jitter optical pulse trains from mode‐locked lasers. In femtosecond mode‐locked lasers, the concentration of a large number of photons in an extremely short pulse duration enables the scaling of timing jitter into the attosecond regime. To characterize such jitter levels, we developed new attosecond‐resolution measurement techniques and show that standard fiber lasers can achieve sub‐fs high‐frequency jitter. By leveraging the ultra‐low jitter of free‐running mode‐locked lasers, we pursued high‐precision optical‐optical and optical‐microwave synchronization techniques. Optical signals spanning 1.5 octaves were synthesized by attosecond‐precision timing and phase synchronization of two independent mode‐locked lasers. High‐stability microwave signals were also synthesized from mode‐locked lasers with drift‐free sub‐10‐fs precision. We further demonstrated the attosecond‐precision distribution of optical pulse trains to remote locations via timing‐stabilized fiber links. Finally, the application of optical pulse trains for high‐resolution sampling and analog‐to‐digital conversion is discussed.     

Erbium‐doped integrated waveguide amplifiers and lasers

Erbium‐doped fiber devices have been extraordinarily successful due to their broad optical gain around 1.5–1.6 µm. Er‐doped fiber amplifiers enable efficient, stable amplification of high‐speed, wavelength‐division‐multiplexed signals, thus continue to dominate as part of the backbone of longhaul telecommunications networks. At the same time, Er‐doped fiber lasers see many applications in telecommunications as well as in biomedical and sensing environments. Over the last 20 years significant efforts have been made to bring these advantages to the chip level. Device integration decreases the overall size and cost and potentially allows for the combination of many functions on a single tiny chip. Besides technological issues connected to the shorter device lengths and correspondingly higher Er concentrations required for high gain, the choice of appropriate host material as well as many design issues come into play in such devices. In this contribution the important developments in the field of Er‐doped integrated waveguide amplifiers and lasers are reviewed and current and future potential applications are explored. The vision of integrating such Er‐doped gain devices with other, passive materials platforms, such as silicon photonics, is discussed.     

Stability of Optically Injected Two‐State Quantum‐Dot Lasers

Simultaneous two‐state lasing is a unique property of semiconductor quantum‐dot (QD) lasers. This not only changes steady‐state characteristics of the laser device but also its dynamic response to perturbations. In this paper we investigate the dynamic stability of QD lasers in an external optical injection setup. Compared to conventional single‐state laser devices, we find a strong suppression of dynamical instabilities in two‐state lasers. Furthermore, depending on the frequency and intensity of the injected light, pronounced areas of bistability between both lasing frequencies appear, which can be employed for fast optical switching in all‐optical photonic computing applications. These results emphasize the suitability of QD semiconductor lasers in future integrated optoelectronic systems where a high level of stability is required.     

Fabrication of three‐dimensional photonic crystals in quantum‐dot‐based materials

Controlling spontaneous emission (SE) is of fundamental importance to a diverse range of photonic applications including but not limited to quantum optics, low power displays, solar energy harvesting and optical communications. Characterized by photonic bandgap (PBG) property, three‐dimensional (3D) photonic crystals (PCs) have emerged as a promising synthetic material, which can manipulate photons in much the same way as a semiconductor does to electrons. Emission tunable nanocrystal quantum dots (QDs) are ideal point sources to be embedded into 3D PCs towards active devices. The challenge however lies in the combination of QDs with 3D PCs without degradation of their emission properties. Polymer materials stand out for this purpose due to their flexibility of incorporating active materials. Combining the versatile multi‐photon 3D micro‐fabrication techniques, active 3D PCs have been fabricated in polymer‐QD composites with demonstrated control of SE from QDs. With this milestone novel miniaturized photonic devices can thus be envisaged.     

A High‐Efficiency All‐Fiber Laser Operated in High‐Order Mode using Ring‐Core Yb‐Doped Fiber

An all‐fiber laser generating a cylindrical vector beam is proposed and demonstrated using a home‐made ring‐core Yb‐doped fiber (RC‐YDF). In the RC‐YDF, not only annular doping but also ring‐type beam pump is realized. This is believed to be the first report describing the realization of annular doping and ring‐type beam pump in active fiber simultaneously, which can enhance the efficiency for high‐order mode oscillation. This laser operates in the high‐order mode stably with a slope efficiency of as high as 55.7%. Cylindrical vector modes can be obtained easily through adjusting the polarization controller. This work may have great potential for providing high‐efficiency and high‐power cylindrical vector beam and vortex beam sources.     

Ultrafast fiber lasers for strong‐field physics experiments

The recent demonstration of rare‐earth‐doped fiber lasers with a continuous‐wave output power approaching the 10‐kW level with diffraction‐limited beam quality proves that fiber lasers constitute a scalable solid‐state laser concept in terms of average power. In order to generate high peak power pulses from a fiber several fundamental limitations have to be overcome. This can be achieved by novel experimental strategies and fiber designs that offer an enormous potential towards ultrafast laser systems combining high average powers (> kW) and high peak power (> GW). In this paper the challenges, achievements and perspectives of ultrashort pulse generation and amplification in fibers are reviewed. This kind of laser system will have a tremendous impact on strong‐field physics experiments, such as the generation of coherent light by high‐harmonic generation. So far, applications in the interesting EUV spectral range suffer from the very low photon count leading to nonrelevant integration times with highly sophisticated detection schemes. High repetition rate high average power fiber lasers can potentially solve this issue. First demonstrations of high repetition‐rate strong‐field physics experiments using novel fiber laser systems will be discussed.     

Short Terahertz Pulse Generation from a Dispersion Compensated Modelocked Semiconductor Laser

Dispersion compensation is vital for the generation of ultrashort and single cycle pulses from modelocked lasers across the electromagnetic spectrum. It is typically based on addition of an extra dispersive element to the laser cavity that introduces a chromatic dispersion opposite to that of the gain medium. To date, however, no dispersion compensation schemes have been successfully applied to terahertz (THz) quantum cascade lasers for short and stable pulse generation in the THz range. In this work, a monolithic on‐chip compensation scheme is realized for a modelocked QCL, permitting THz pulses to be considerably shortened from 16ps to 4ps. This is based on the realization of a small coupled cavity resonator that acts as an ‘off resonance’ Gires‐Tournois interferometer (GTI), permitting large THz spectral bandwidths to be compensated. This novel application of a GTI opens up a direct and simple route to sub‐picosecond and single cycle pulses in the THz range from a compact semiconductor source.     

Low‐wavelength emission of Nd‐doped lasers

This paper gives an overview of the results obtained with diode‐pumped Neodymium‐doped crystals operating below 900 nm. Operation at such low wavelengths requires considering the strong thermal population of the lower level of the laser transition. Based on a theoretical study and simulations, the paper presents the challenges related to the design of these three‐level lasers. Experimental results are given with Nd:YAG and Nd:vanadate crystals. It is explained how to deal with the line competition with emission at 946 nm or 912 nm. Finally, intracavity second‐harmonic generation is presented. The output powers reach a few hundred mW at wavelengths below 450 nm. Hence, the paper demonstrates the potential of Nd‐doped diode‐pumped solid‐state lasers for applications in the blue range, in replacement of gas lasers such as helium‐cadmium lasers.     

Near‐room‐temperature photon‐noise‐limited quantum well infrared photodetector

With the modern development of infrared laser sources such as broadly tunable quantum cascade lasers and frequency combs, applications of infrared laser spectroscopy are expected to become widespread. Consequently, convenient infrared detectors are needed, having properties such as fast response, high efficiency, and room‐temperature operation. This work investigated conditions to achieve near‐room‐temperature photon‐noise‐limited performance of quantum well infrared photodetectors (QWIPs), in particular the laser power requirement. Both model simulation and experimental verification were carried out. At 300 K, it is shown that the ideal performance can be reached for typical QWIP designs up to a detection wavelength of 10 µm. At 250 K, which is easily reachable with a thermoelectric Peltier cooler, the ideal performance can be reached up to 12 µm. QWIPs are therefore suitable for detection and sensing applications with devices operating up to or near room temperature.     

Ultra‐low loss waveguide platform and its integration with silicon photonics

Planar waveguides with ultra‐low optical propagation loss enable a plethora of passive photonic integrated circuits, such as splitters and combiners, filters, delay lines, and components for advanced modulation formats. An overview is presented of the status of the field of ultra‐low loss waveguides and circuits, including the design, the trade‐off between bend radius and loss, and fabrication rationale. The characterization methods to accurately measure such waveguides are discussed. Some typical examples of device and circuit applications are presented. An even wider range of applications becomes possible with the integration of active devices, such as lasers, amplifiers, modulators and photodetectors, on such an ultra‐low loss waveguide platform. A summary of efforts to integrate silicon nitride and silica‐based low‐loss waveguides with silicon and III/V based photonics, either hybridly or heterogeneously, will be presented. The approach to combine these integration technologies heterogeneously on a single silicon substrate is discussed and an application example of a high‐bandwidth receiver is shown.     

Functional organic single crystals for solid‐state laser applications

Because of long‐range order and high chemical purity, organic crystals have exhibit unique properties and attracted a lot of interest for application in solid‐state lasers. As optical gain materials, they exhibit high stimulated emission cross section and broad tunable wavelength emission as similar to their amorphous counterpart; moreover, high purity and high order give them superior properties such as low scattering trap densities, high thermal stability, as well as highly polarized emission. As electronic materials, they are potentially able to support high current densities, thus making it possible to realize current driven lasers. This paper mainly describes recent research progress in organic semiconductor laser crystals. The building molecules, crystal growth methods, as well as their stimulated emission characteristics related with crystal structures are introduced; in addition, the current state‐of‐the‐art in the field of crystal laser devices is reviewed. Furthermore, recent advances of crystal lasers at the nanoscale and single crystal light‐emitting transistors (LETs) are presented. Finally, an outlook and personal view is provided on the further developments of laser crystals and their applications.     

Two‐dimensional microcavity lasers

Advances in processing technology, such as quantum‐well structures and dry‐etching techniques, have made it possible to create new types of two‐dimensional (2D) microcavity lasers which have 2D emission patterns of output laser light although conventional one‐dimensional (1D) edge‐emitting‐type lasers have 1D emission. Two‐dimensional microcavity lasers have given nice experimental stages for fundamental researches on wave chaos closely related to quantum chaos. New types of 2D microcavity lasers also can offer the important lasing characteristics of directionality and high‐power output light, and they may well find applications in optical communications, integrated optical circuits, and optical sensors. Fundamental physics of 2D microcavity lasers has been reviewed from the viewpoint of classical and quantum chaos, and recently developed theoretical approaches have been introduced. In addition, nonlinear dynamics due to the interaction among wave‐chaotic modes through the active lasing medium is explained. Applications of 2D microcavity lasers for directional emission with strong light confinement are introduced, as well as high‐precision rotation sensors designed by using wave‐chaotic properties.     

多功能有源光纤器件组合实验仪

多功能有源光纤器件组合实验仪由若干功能单元构成，通过简单的跳线插接就可组合成系列实验装置：掺铒光纤放大的自发辐射(ASE)光源，掺铒光纤放大器(EDFA)，掺铒光纤激光器(EDFL)和全光纤调Q激光器．该实验仪为学生做有源光纤器件专题系列实验提供了平台．     

Microcavity‐Stabilized Quantum Cascade Laser

Narrow‐linewidth lasers are key elements in optical metrology and spectroscopy. Spectral purity of these lasers determines accuracy of the measurements and quality of collected data. Solid state and fiber lasers are stabilized to relatively large and complex external optical cavities or narrow atomic and molecular transitions to improve their spectral purity. While this stabilization technique is rather generic, its complexity increases tremendously moving to longer wavelenghts, to the infrared (IR) range. Inherent increase of losses of optical materials at longer wavelengths hinders realization of compact, room temperature, high finesse IR cavities suitable for laser stabilization. In this paper, we report on demonstration of quantum cascade lasers stabilized to high‐Q crystalline mid‐IR microcavities. The lasers operating at room temperature in the 4.3‐4.6 μm region have a linewidth approaching 10 kHz and are promising for on‐chip mid‐IR and IR spectrometers.

     

Single-frequency terahertz source pumped by Q-switched fiber lasers based on difference-frequency generation in GaSe crystal

We demonstrate a unique terahertz (THz) source that is compact, utilizes recently developed all-fiber Q-switched lasers, and is based on difference-frequency generation in a GaSe crystal. A single piezo simultaneously Q switched the two fiber lasers by using stress-induced birefringence, to achieve the temporal overlap of pulses from the two fiber lasers. These correlated pulses then combine in the GaSe crystal to produce coherent and highly monochromatic THz pulses. The peak power for this THz source can reach 0.53 mW, corresponding to an average power of 0.43 microW and a conversion efficiency of 4.75 x 10(-7). The estimated linewidth of this THz source can be as narrow as approximately 35 MHz or 1.17 x 10(-3) cm(-1).     

Real‐Time and Broadband Terahertz Wave Scattering Manipulation via Polarization‐Insensitive Conformal Graphene‐Based Coding Metasurfaces

Here, for the first time, the real‐time and broadband manipulation of terahertz (THz) waves are acquired by introducing a multifunctional graphene‐based coding metasurface (GBCM). The designed structure consists of subwavelength patterned graphene units whose operational statuses can be dynamically switched between two digital states of “0” and “1”. By engineering the spatial distribution of chemical potentials across the GBCM, various scattering patterns having single, two, four, and numerous reflection beams are elaborately achieved just within one planar structure. To compute the far‐field pattern of GBCM, an inverse discrete Fourier transform (IDFT) is established, providing a fast and efficient design method. The proposed GBCM provides a low reflection bellow ?10 dB over a broad frequency band ranging from 1 THz to 1.9 THz. In addition, the metasurface retains its low reflection behavior in a wide range of incident wave angles for both TE and TM polarizations. According to conformal invariance of graphene sheets, the stealth property of GBCM is well preserved while wrapping around a curved object. The proposed technique of real‐time scattering manipulation leads to multifunctional THz devices, opening new routes contributing to numerous applications such as imaging and stealth technology.