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为了获得p-型的长波长InAsSb材料并研究掺杂剂Ge对材料特性的影响,用熔体外延法生长了掺Ge的波长为12 μm的p型-InAsSb 外延层.用傅里叶红外光谱仪、Van der Pauw 法和电子探针微分析研究了材料的透射光谱、电学性质以及组分的分布.结果表明,两性杂质Ge在熔体外延生长的InAs0.04Sb0.96材料中起受主杂质作用.当外延层的组分相同时,材料的截止波长不随掺Ge浓度的变化而变化,但是随着外延层中掺Ge量的增加,外延层的透射率下降.掺杂原子Ge在外延层的表面及生长方向的分布都是相当均匀的.77 K下测得,载流子浓度为9.18×1016 cm-3的掺Ge的p型-InAs0.04Sb0.96样品,其空穴迁移率达到1 120 cm2·Vs-1. 相似文献
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为了获得P型的长波长InAsSb材料并研究掺杂剂Ge对材料特性的影响,用熔体外延法生长了掺Ge的波长为12μm的P型-InAsSb外延层.用傅里叶红外光谱仪、VanderPauw法和电子探针微分析研究了材料的透射光谱、电学性质以及组分的分布.结果表明,两性杂质Ge在熔体外延生长的InAs0.01Sb0.96材料中起受主杂质作用.当外延层的组分相同时,材料的截止波长不随掺Ge浓度的变化而变化,但是随着外延层中掺Ge量的增加,外延层的透射率下降.掺杂原子Ge在外延层的表面及生长方向的分布都是相当均匀的.77K下测得,载流子浓度为9.18×10^16cm^-3的掺Ge的P型-InAS0.01Sb0.96样品,其空穴迁移率达到1120cm^2·Vs^-1. 相似文献
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为了获得p-型的长波长InAsSb材料并研究掺杂剂Ge对材料特性的影响,用熔体外延法生长了掺Ge的波长为12 μm的p型-InAsSb 外延层.用傅里叶红外光谱仪、Van der Pauw 法和电子探针微分析研究了材料的透射光谱、电学性质以及组分的分布.结果表明,两性杂质Ge在熔体外延生长的InAs0.04Sb0.96材料中起受主杂质作用.当外延层的组分相同时,材料的截止波长不随掺Ge浓度的变化而变化,但是随着外延层中掺Ge量的增加,外延层的透射率下降.掺杂原子Ge在外延层的表面及生长方向的分布都是相当均匀的.77 K下测得,载流子浓度为9.18×1016 cm-3的掺Ge的p型-InAs0.04Sb0.96样品,其空穴迁移率达到1 120 cm2·Vs-1. 相似文献
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金属与Ge材料接触时界面处存在着强烈的费米钉扎效应, 尤其与n型Ge形成的欧姆接触的比接触电阻率高, 是制约Si基Ge器件性能的关键因素之一. 本文对比了分别采用金属Al和Ni 与Si衬底上外延生长的p型Ge和n型Ge材料的接触特性. 发现在相同的较高掺杂条件下, NiGe与n型Ge可形成良好的欧姆接触, 其比接触电阻率 较 Al接触降低了一个数量级, 掺P浓度为2×1019 cm-3时达到1.43×10-5 Ω·cm2. NiGe与p型Ge接触和Al接触的比接触电阻率相当, 掺B浓度为4.2×1018 cm-3时达到1.68×10-5 Ω·cm2. NiGe与n型Ge接触和Al电极相比较, 在形成NiGe过程中, P杂质在界面处的偏析是其接触电阻率降低的主要原因. 采用NiGe作为Ge的接触电极在目前是合适的选择.
关键词:
金属与Ge接触性质
NiGe
比接触电阻率 相似文献
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采用磁控溅射技术在Si衬底上以350?C沉积14 nm的非晶Ge薄膜,通过退火改变系统生长热能,实现了低维Ge/Si点的生长.利用原子力显微镜(AFM)和拉曼(Raman)光谱所获得的形貌和声子振动信息,对Ge点的形成机理和演变规律进行了研究.实验结果表明:在675?C退火30 min后,非晶Ge薄膜转变为密度高达8.5×109cm-2的Ge点.通过Ostwald熟化理论、表面扩散模型和对激活能的计算,很好地解释了退火过程中,Ge原子在Si表面迁移、最终形成纳米点的行为.研究结果表明用高速沉积磁控溅射配合热退火制备Ge/Si纳米点的方法,可为自组织量子点生长实验提供一定的理论支撑. 相似文献
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支撑光网络发展的硅基光电子技术研究 总被引:3,自引:0,他引:3
作为大规模集成电路和化合物半导体光电子器件的制造技术共同构成的一门高新技术 ,硅基光电子技术越来越受到重视 .文章着重介绍中国科学院半导体研究所外延生长SiGe/Si量子结构和Si基器件研究的结果 :采用自行设计的UHV/CVD系统 ,成功地生长出Ⅱ型SiGe/Si量子阱和量子点 ,直到 2 5 0K仍能观察到自组织生长Ge/Si(0 0 1 )量子点的发光峰 ;研制成功SiGe/Si谐振腔增强型光电二极管 (RCEPD)、Y分支MZI光调制器和多模干涉 -马赫 -曾德干涉型光开关等Si基光电子器件 ;1 .3μm处RCEPD的量子效率达到 4 .2 % ,- 5V偏压下暗电流密度 1 2 pA/ μm2 ;2× 2热光型光开关的响应时间小于 2 0 μs,两输出端关态串扰为 - 2 2dB ,通态串扰为 - 1 2dB . 相似文献
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本文采用对角化三角场中d5组态完全能量矩阵的方法,研究了KZnF3Fe3+体系的局域晶体结构和EPR参量之间的关系.在分析中我们引入了双层配位模型,即配位体包括Fe3+离子最近邻的6个F-离子和次近邻的8个K+离子.计算表明KZnF3Fe3+的局域结构畸变源于一个K+离子沿C3轴方向(即[111]方向)向Fe3+离子的移动,从而诱导F-离子的位移,使得Fe3+-F-键与C3轴夹角发生变化.通过计算EPR的低对称参量D和(a-F),我们分别得出室温(T=300K)时的畸变角为△θ1=2.58°,△θ2=-1.4°和低温(T7=77 K)时畸变角为△θ1=2.85°,△θ2=-1.40计算结果与实验观察值△θ1=2.8±0.3°,△θ2=-1.1±0.3°相符合. 相似文献
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E. S. Demidov Yu. A. Danilov V. V. Podol’skiĭ V. P. Lesnikov M. V. Sapozhnikov A. I. Suchkov 《JETP Letters》2006,83(12):568-571
The possibility of laser synthesis of diluted magnetic semiconductors based on germanium and silicon doped with manganese or iron up to 10–15 at % has been shown. According to data on the electronic levels of 3d atoms in semiconductors, Mn and Fe impurities are most preferable for realizing ferromagnetism in Ge and Si through the Ruderman-Kittel-Kasuya-Yosida mechanism. Epitaxial Ge and Si layers 50–110 nm in thickness were grown on gallium arsenide or sapphire single crystal substrates heated to 200–480°C. The content of a 3d impurity has been measured by x-ray spectroscopy. The ferromagnetism of layers and high magnetic and acceptor activities of Mn in Ge, as well as of Mn and Fe in Si, are manifested in the observation of the Kerr effect, anomalous Hall effect, high hole conductivity, and anisotropic ferromagnetic resonance at 77–500 K. According to the ferromagnetic resonance data, the Curie point of Ge:Mn and Si:Mn on a GaAs substrate and of Si:Fe on an Al2O3 substrate is no lower than 420, 500, and 77 K, respectively. 相似文献
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M.S. Skolnick L. Eaves R.A. Stradling J.C. Portal S. Askenazy 《Solid State Communications》1974,15(8):1403-1408
The effects of intrinsic illumination on the far infrared photoconductivity of high purity Si and Ge are studied. Such illumination permits the observation of both the majority and minority impurities. One of the donors in Ge is highly sensitive to heat treatment, a result suggesting that it arises from lattice defects rather than chemical impurities. 相似文献
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W. A. Brantley C. J. Hwang L. R. Dawson H. J. Queisser 《Solid State Communications》1972,10(12):1141-1144
Two pairs of photoluminescence (PL) emission bands between 1.494 and 1.480 eV have been observed at 4.2°K from high purity, undoped GaAs layers grown by liquid phase epitaxy. The PL emission from doped layers grown after incremental Si additions to a single parent melt suggests that Si acceptors are responsible for the lower energy pair of bands near 1.484 eV. The identity of the acceptor species responsible for the higher energy pair near 1.493 eV is presently unknown. 相似文献
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Low-temperature (<300 °C) molecular beam epitaxy of Fe3Si/Ge was investigated. By optimizing growth conditions, Fe3Si layers with a flat interface and good crystallinity were epitaxially grown on Ge(1 1 1) substrates. In addition, double heteroepitaxial growth of Fe3Si/Ge on high quality Fe3Si/Ge substrates was investigated. Reflective high-energy electron diffraction measurements suggested Fe3Si and Ge layers were epitaxially grown on Fe3Si/Ge substrates. However, transmission electron microscopy measurements indicated stacking faults formed in the intermediate Ge and top Fe3Si layers. Improved crystallinity of the intermediate Ge layer is essential to realize high quality [Fe3Si/Ge]2 multi-layered structures. 相似文献
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I.L. Beinikhes Sh.M. Kogan A.F. Polupanov R. Taskinboev 《Solid State Communications》1985,53(12):1083-1087
Numerical nonvariational methods are proposed for the calculation of energies and wave functions of bound states, ground state wave functions with the account of central cell corrections, and the orthonormalized wave functions of the continuous spectrum of nonhydrogenlike shallow impurities in semiconductors. A number of different spectral characteristics is calculated for donor impurities in Ge and Si and for acceptor impurities in Ge and GaAs. The theory of photofield ionization i.e. tunnel ionization of an optically excited impurity atom is presented for shallow donors with the account of the effective mass anisotropy. The possibility of the observation of the line spectrum (due to transitions to shallow Coulomb excited levels) of a deep impurity in the presence of a high magnetic field is shown. 相似文献
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Room temperature oxidation of Cu3Ge films grown on Si, Si(0.85)Ge(0.15) and Si(0.52)Ge(0.48) substrates, respectively, at a temperature of 200-300 degrees C was studied using transmission electron microscopy (TEM) in conjunction with energy dispersive spectrometry (EDS) and scanning electron microscopy (SEM). For Cu(3)Ge films grown at 200 degrees C and subsequently exposed in air for 1 week oxide protrusions and oxide networks appeared in the film surface and grain boundaries of Cu(3)Ge, respectively. At room temperature O from air and Si from the substrate, diffused along the grain boundaries of Cu(3)Ge to react with Cu(3)Ge grains, initiating the Cu(3)Si-catalyzed oxidation. Cu(3)Ge films are superior to Cu(3)(Si(1-x)Gex) films in retarding Cu(3)Si-catalyzed oxidation. Annealing at 300 degrees C allowed Si diffusion from the substrate into the Cu(3)Ge overlayer to form Cu(3)(Si(1-x)Gex), enhancing the Cu(3)Si-catalyzed oxidation rate. In the present study, Cu(3)Ge films grown on Si(0.52)Ge(0.48) at 200 degrees C show the best resistance to room temperature oxidation because higher Ge concentration in the substrate and lower temperature annealing can more effectively retard Si diffusion from the substrate into the Cu(3)Ge overlayer, and hence reduce the Cu(3)Si-catalyzed oxidation rate. 相似文献
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J. Pezoldt Ch. Zgheib V. Lebedev P. Masri O. Ambacher 《Superlattices and Microstructures》2006,40(4-6):612
Heteroepitaxially grown 3C-SiC and 2H-AlN layers on Ge modified Si(111) substrates were investigated by Fourier transform infrared spectroscopic ellipsometry. The obtained phonon frequencies increase with increasing Ge pre-deposition indicating a decrease of the residual stress in both wide band gap materials. Additionally, it is shown that infrared ellipsometry allows the analysis of the polytype content of the grown epitaxial layers. 相似文献
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E.S. Demidov B.A. Aronzon S.N. Gusev A.S. Lagutin S.A. Levchuk S.N. Nikolaev V.V. Podolskii M.V. Sapozhnikov 《Journal of magnetism and magnetic materials》2009,321(7):690-694
The paper reports on the results of a study of the synthesis conditions effects on magnetic and transport properties of nanosized layers of high-Tc diluted magnetic semiconductors (DMS), such as Ge:Mn, Si:Mn and Si:Fe, fabricated by laser-plasma deposition over a wide range of the growth temperature, Tg=(20-550) °C on single-crystal GaAs or Al2O3 substrates. Ferromagnetism of the layers was detected by measurement data of the magneto-optical Kerr effect, anomalous Hall effect, negative magnetoresistance and ferromagnetic resonance (FMR) at 5-500 K. The optimum growth temperature, Tg, for Si:Mn/GaAs layers with Tc≈400 K is shown to be about 400 °C. The Si:Mn/Al2O3 layers with 35% of Mn have the metal-type of conductivity with manifestation of magnetization up to room temperature. Different types of uniformly doped structures and digital alloys have been investigated. In contrast to GaSb:Mn films, Si-based ferromagnetic layers have strongly different magnetic and electric properties in case of uniformly doped structures and digital alloys. Positive results of the Fermi level variation effect on the improvement of Si- and Ge-based DMS layers have been gained on the use of additional doping with shallow acceptor Al impurity which contributes to the increase of the hole concentration and the RKKY exchange interaction of 3d-ions. The Ge:(Mn, Al)/GaAs or Ge (Mn, Al)/Si layers grown at 20 °C feature surprising extraordinary angular dependence of FMR. 相似文献
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M. Stoffel G. S. Kar U. Denker A. Rastelli H. Sigg O. G. Schmidt 《Physica E: Low-dimensional Systems and Nanostructures》2004,23(3-4):421
We investigate the embedding of Ge islands in a Si matrix by means of atomic force microscopy and photoluminescence (PL) spectroscopy. The Ge islands were grown between 360°C and 840°C and subsequently capped with Si at different temperatures. For the highest Ge growth temperature (840°C), we show that the surface flattens at high Si capping temperatures while new facets can be identified at the island base for intermediate capping temperatures (650–450°C). At low capping temperatures (300–350°C), the island morphology is preserved. In contrast to the observed island shape changes, the decreasing Si capping temperature causes only a small redshift of the island related PL signal for islands grown on high temperatures. This redshift increases for Ge islands grown at lower temperatures due to an increased Ge content in the islands. By applying low-temperature capping (300°C) on the different island types, we show that the emission wavelength can be extended up to 2.06 μm for hut clusters grown at 400°C. Further decreasing of the island growth temperature to 360°C leads to a PL blueshift, which is explained by charge carrier confinement in Ge quantum dots. 相似文献
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Malachias A Kycia S Medeiros-Ribeiro G Magalhães-Paniago R Kamins TI Williams RS 《Physical review letters》2003,91(17):176101
Three-dimensional composition maps of nominally pure Ge domes grown on Si(001) at 600 degrees C were obtained from grazing incidence anomalous x-ray scattering data at the Ge K edge. The data were analyzed in terms of a stack of layers with laterally varying concentration. The results demonstrated that the domes contained a Si-rich core covered by a Ge-rich shell and were independently supported by selective etch experiments. The composition profile resulted from substrate Si alloying into the Ge during growth to partially relax the stress in and under the domes. 相似文献