Positive secondary Ion emission from Si1−xGex bombarded by O2

The positive secondary ion yields of B⁺ (dopant), Si⁺ and Ge⁺ were measured for Si_1−xGe_x (0 ≤ x ≤ 1) sputtered by 5.5 keV ¹⁶O₂⁺ and ¹⁸O₂⁺. It is found that the useful yields of Ge⁺ and B⁺ suddenly drop by one order of magnitude by varying the elemental composition x from 0.9 to 1 (pure Ge). In order to clarify the role of oxygen located near surface regions, we determined the depth profiles of ¹⁸O by nuclear resonant reaction analysis (NRA: ¹⁸O(p,α)¹⁵N) and medium energy ion scattering (MEIS) spectrometry. Based on the useful yields of B⁺, Si⁺ and Ge⁺ dependent on x together with the elemental depth profiles determined by NRA and MEIS, we propose a probable surface structure formed by 5.5 keV O₂⁺ irradiation.     

Influence of multiple elastic scattering on the shape of the elastically scattered electron peak

The influence of multiple elastic scattering on the shape of the energy distribution of elastically scattered electrons is investigated. The energy of the maximum intensity of the detected electrons differs from the probe electron beam energy due to the elastic energy loss. The experimentally observed spectrum is adequately described by a Gaussian distribution with a maximum at the elastic energy loss value. In this paper the peak-broadening mechanisms due to energy-analyzer spread function, probe beam energy distribution and atomic vibration-induced broadening are considered to be independent and of random nature. Analysis of multiple elastic scattering shows some mechanisms leading to the broadening and a shift of the elastic scattering electron energy spectrum from the value defined by single elastic scattering at the certain angle. It is revealed that the magnitude of this shift and the width of energy distribution is determined by ratio (_lin/_ltr)$(l_{\text{in}}/l_{\text{tr}})$, where _lin$l_{\text{in}}$ is inelastic mean free pass, _ltr$l_{\text{tr}}$ is the transport length.     

Tetragonal Distortion of GaN Epilayer with Multiple Buffer Layers on Si （111） Studied by RBS/Channelling and HRXRD

Rutherford backscattering （RBS）/channelling and high resolution x-ray diffraction （HRXRD） have been used to characterize the tetragonal distortion of a GaN epilayer with four Alx Ga1-xN and single AIN buffer layers grown on a Si （111） substrate by metal-organic vapour phase epitaxy （MOVPE）. The results show that a 1000nm GaN epilayer with a perfect crystal quality （Xmin = 1.54%） can be grown on the Si （111） substrate in virtue of multiple buffer layers. Using the RBS/channelling angular scan around an off-normal （1213） axis in the （1010） plane and the conventional HRXRD θ - 20 scans normal to GaN （0002） and （1122） planes at the 0° and 180° azimuth angles, the tetragonal distortion eT, which is caused by the elastic strain in the epilayer and different buffer layers, can be obtained respectively. The two experiments are testified at one result, the tetragonal distortion of GaN epilayer is nearly to a fully relaxed （eT = 0）.     

Measurement and Analysis of Composition and Depth Profile of H in Amorphous Si1-xCx:H Films

Composition in amorphous Si1-xCx：H heteroepitaxial thin films on Si （100） by plasma enhanced chemical vapour deposition （PECVD） is analysed. The unknown x （0.45-3.57） and the depth profile of hydrogen in the thin films are characterized by Rutherford backscattering spectrum （RBS）, resonance-nuclear reaction analysis （R-NRA） and elastic recoil detection （ERD）, respectively. In addition, the depth profile of hydrogen in the unannealed thin films is compared to that of the annealed thin films with rapid thermal annealing （RTA） or laser spike annealing （LSA） in nitrogen atmosphere. The results indicate that the stoichiometric amorphous SiC can be produced by PECVD when the ratio of CH4/SiH4 is approximately equal to 25. The content of hydrogen decreases suddenly from 35% to 1% after 1150℃ annealing. RTA can reduce hydrogen in SiC films effectively than LSA.     

Depth Dependence of Tetragonal Distortion of a ZnO/Mg0.1Zn0.9O/ZnO Heterostructure Studied by Rutherford Backscattering/Channeling

Rutherford backscattering and channeling are used to characterize the structure of a ZnO/Mg_0.1Zn_0.9O/ZnO heterostructure grown on a sapphire (0001) substrate by rf plasma-assisted molecular beam epitaxy. The results show that the Mg_0.1Zn_0.9O layer has the same hexagonal wurtzite structure as the underlying ZnO layer, and the heterostructure has a good crystalline quality with χ_min =5%, which is the ratio of the backscattering yields of aligned and random spectra in the near-surface region. Using the channeling angular scan around an off-normal <12^-13> axis in the {101^-0} plane of both ZnO and MgZnO layer, the tetragonal distortion e_T, which is caused by the elastic strain in the epilayer, is determined. The depth dependence of e_T is obtained by using this technique. It can clearly be seen that the elastic strain rapidly decreases with the increase in thickness of the ZnO film in the early growth stage and becomes slightly larger in the region of the Mg_0.1Zn_0.9O layer.     

A Comparison of GaN Epilayers with Multiple Buffer Layers and with a Single Buffer Layer Grown on Si（111） Studied by HRXRD and RBS/Channeling

Two hexagonal GaN epilayers （samples A and B） with multiple buffer layers and single buffer layer are grown on Si （111） by metal-organic vapour phase epitaxy （MOVPE）. From the results of Rutherford backscattering （RBS）/channeling and high resolution x-ray diffraction （HRXRD）, we obtain the lattice constant （a and c） of two GaN epilayers （aA = 0.3190 nm, cA = 0.5184 nm and aB = 0.3192 nm, CB = 0.5179 nm）, the crystal quality of two GaN epilayers （ ХminA=4.87%, ХminB =7.35% along 〈1-↑213〉 axis） and the tetragonal distortion eT of the two samples along depth （sample A is nearly fully relaxed, sample B is not relaxed enough）. Comparing the results with the two samples, it is indicated that sample A with multiple buffer layers have better crystal quality than sample B with a single buffer layer, and it is a good way to grow GaN epilayer on Si （111） substrates using multiple buffer layers to improve crystal quality and to reduce lattice mismatch.     

Atomic Diffusion in Cu/Si （111） and Cu/SiO2/Si （111） Systems by Neutral Cluster Beam Deposition

The Cu films are deposited on two kinds of p-type Si （111） substrates by ionized duster beam （ICB） technique. The interface reaction and atomic diffusion of Cu/Si （111） and Cu/SiO2/Si （111） systems are studied at different annealing temperatures by x-ray diffraction （XRD） and Rutherford backscattering spectrometry （RBS）. Some significant results are obtained： For the Cu/Si （111） samples prepared by neutral dusters, the interdiffusion of Cu and Si atoms occurs when annealed at 230℃. The diffusion coefficients of the samples annealed at 230℃ and 500℃ are 8.5 ×10^-15 cm^2.s^-1 and 3.0 ×10^-14 cm^2.s^-1, respectively. The formation of the copper-silicide phase is observed by XRD, and its intensity becomes stronger with the increase of annealing temperature. For the Cu/SiO2//Si （111） samples prepared by neutral dusters, the interdiffusion of Cu and Si atoms occurs and copper silicides are formed when annealed at 450℃. The diffusion coefficients of Cu in Si are calculated to be 6.0 ×10^-16 cm^2.s^-1 at 450℃, due to the fact that the existence of the SiO2 layer suppresses the interdiffusion of Cu and Si.     

Microscopic study of the low-energy3He(3He, 2p)4He and3H(3H, 2n)4He fusion cross sections

We have calculated the³He(³He, 2p)⁴He and³H(³H, 2n)⁴He reaction cross sections at low energies within the microscopic multichannel resonating group method. For both reactions, we find good agreement with experiment. For the³H(³H, 2n)⁴He reaction, our calculated energy dependence reproduces that of each individual low-energy experimental data set, except for a normalization constant. Using this fact, we derive at a low-energy³H(³H, 2n)⁴He rate by taking the averaged mean of these fits.This work has been supported in part by the National Science Foundation, Grants PHY86-04197 and PHY88-17296.     

洞态氩离子的退激发及末电离态离子分布的理论研究

在描述洞原子(或离子)退激发过程只考虑单俄歇跃迁和辐射跃迁的辐射-单俄歇级联退激发模型的基础上,进一步考虑了双俄歇跃迁的贡献,发展了辐射-单俄歇-双俄歇级联退激发模型.据此模型研究了Ar⁺(1s^-1)(1s洞态氩离子)和Ar⁺(2s^-1)(2s洞态氩离子)的退激发过程及末电离态离子的分布,获得了与实验相符的结果. 关键词： 辐射-单俄歇级联退激发模型 双俄歇跃迁 辐射-单俄歇-双俄歇级联退激发模型 洞离子退激发     

The origination of ill-defined layer in organic spin valves

The origination of ill-defined layer in organic spin valves was investigated by using atomic force microscopy (AFM) and Rutherford backscattering (RBS) analysis. It was found that conductive bulges of LSMO film and self-grown pinholes in Alq₃ film other than Co inclusions could lead to the formation of ill-defined layer. The morphology of LSMO substrate had a strong influence on that of Alq₃ film, LSMO/Alq₃ and Alq₃/Co interfaces. Moreover, Alq₃ film with the thickness of 1-4 nm could be barriers which was explained by small active area and added insulated layer in organic magnetic tunnel junctions.     

2.0-MeV Er+ implanted in silicon: depth distribution, damage profile and annealing behaviour

Si crystals were implanted with 2.0- MeV Er⁺ at the doses of 5×10¹² ions/cm², 1×10¹⁴ ions/cm², 5×10¹⁴ions/cm², 1×10¹⁵ ions/cm² and 2.5×10¹⁵ ions/cm². Conventional furnace thermal annealing was carried out in the temperature range from 600 °C to 1150 °C. The depth distribution of Er, associated damage profiles and annealing behavioar were investigated using the Rutherford backscattering spectrometry and channelling (RBS/C) technique. A proper convolution program was used to extract the distribution of Er from the experimental RBS spectrum. The obtained distribution parameters, projected range R_p, projected range straggling ΔR_p and skewness SK were compared with those of TRIM96 calculation.The experimental R_p and SK values agree well with the simulated values, while the experimental ΔR_p is larger than TRIM 96 simulated value by a factor of 18%. The damage profile of silicon crystal induced by 2.0-MeV Er⁺ at a dose of 1×10¹⁴ ions/cm² was extracted using the multiple-scattering dechannelling model based on Feldman’s method, which is in a good agreement with the TRIM96 calculation. For the samples with dose of 5×10¹⁴ ions/cm² and more, an abnormal annealing behavioar was found and a qualitative explaination has been given. Received: 11 October 1999 / Accepted: 28 March 2000 / Published online: 5 July 2000     

Morphological and structural characterizations of CrSi2 nanometric films deposited by laser ablation

The structure and morphology of chromium disilicide (CrSi₂) nanometric films grown on 〈1 0 0〉 silicon substrates both at room temperature (RT) and at 740 K by pulsed laser ablation are reported. A pure CrSi₂ crystal target was ablated with a KrF excimer laser in vacuum (∼3 × 10⁻⁵ Pa). Morphological and structural properties of the deposited films were investigated using Rutherford backscattering spectrometry (RBS), grazing incidence X-ray diffraction (GID), X-ray reflectivity (XRR), scanning (SEM) and transmission electron microscopy (TEM). From RBS analysis, the films’ thickness resulted of ∼40 nm. This value is in agreement with the value obtained from XRR and TEM analysis (∼42 and ∼38 nm, respectively). The films’ composition, as inferred from Rutherford Universal Manipulation Program simulation of experimental spectra, is close to stoichiometric CrSi₂. GID analysis showed that the film deposited at 740 K is composed only by the CrSi₂ phase. The RT deposited sample is amorphous, while GID and TEM analyses evidenced that the film deposited at 740 K is poorly crystallised. The RT deposited film exhibited a metallic behaviour, while that one deposited at 740 K showed a semiconductor behaviour down to 227 K.     

2H( 3He, t)2p reaction at 2 GeV

The exclusive ²H( ³He, t)2p reaction has been studied at 2 GeV for energy transfers up to 500 MeV and triton angles up to 3.4^°. The protons were measured in the large acceptance magnetic detector DIOGENE, in coincidence with the forward tritons detected in a dedicated magnetic arm. The energy transfer spectra extend well above the pion threshold. However, in the region of Δ excitation, the yield is less than 10% of the inclusive ²H( ³He, t) cross-section, which indicates the small contribution of the ΔN ↦ NN process. The angular distributions of the two protons in their center of mass have been analysed as a function of energy transfer and triton angle and a Legendre polynomial decomposition has been achieved. These data have been compared to a model based on a coupled-channel approach for describing the NN and NΔ systems. Received: 21 October 2002 / Accepted: 15 November 2002 / Published online: 11 March 2003 RID="a" ID="a"e-mail: ramstein@ipno.in2p3.fr RID="†" ID="†"Deceased. RID="†" ID="†"Deceased. RID="d" ID="d"Present adress: School of Engineering, J?nk?ping University, P.O. Box 1026, S-551 11 J?nk?ping, Sweden. Communicated by M. Gar?on     

Temperature influence on the anodic growth of self-aligned Titanium dioxide nanotube arrays

We report about the ambient conditions and electrolytes influence on the synthesis of self-organized titania nanotube arrays prepared by anodic oxidation. Arrays of randomly disordered Titanium dioxide nanotubes with pores diameter ranging between 60 and 100 nm, wall thickness of 25 up to 40 nm and around 300 nm nanotubes length, can be prepared under HF electrolyte and its mixtures with sulphuric acid at RT anodization.     

Compositional characterisation of Zn-diffused lithium niobate waveguides

Rutherford backscattering (RBS) and secondary-ion mass spectrometry techniques have been used to investigate the two-step process involved during waveguide fabrication in LiNbO₃ using Zn-vapour diffusion. Compositional analysis (O, Nb, Li and Zn) in the two steps has been characterised. RBS analysis reveals that the first step, involving a heating of the substrate under a metallic Zn atmosphere, gives rise to a partial exchange between the Nb and Li ions from the crystals and the Zn from the vapour source. The second treatment at higher temperature in an open atmosphere diffuses the Zn deeper into the substrate, thus forming an optical waveguide, while the Nb and Li ions recover their bulk values. Received: 16 May 2001 / Revised version: 7 September 2001 / Published online: 30 October 2001     

Desorption of chemisorbed Carbon on Mo(1 0 0) by noble gas ion sputtering: Validation of ground test measurements of ion engine lifetimes

We report desorption cross section measurements for one monolayer of chemisorbed carbon on a Mo(1 0 0) surface induced by sputtering with noble gas ions (Ne⁺, Ar⁺, Xe⁺) at different incident angles, ion energies, and substrate temperatures. Desorption cross sections were determined by using low-energy ion scattering (LEIS) to monitor the increase of the signal from the Mo substrate. A monolayer of p(1 × 1) carbon adatoms on the Mo(1 0 0) surface was created by dosing ethylene (C₂H₄) to the substrate at 800 K, and characterized by Auger electron spectroscopy (AES) and low energy electron diffraction (LEED). We find that the carbon desorption cross section increases with increasing mass and energy of the impinging ions, and there is a maximum value for the desorption cross section at an incident angle for the ions of 30° from the surface plane. The desorption cross section also increases up to a substrate temperature of 300 °C. Values for the carbon desorption cross section for carbon adatoms on Mo(1 0 0) by 400-eV Xe⁺ ion sputtering are about 2 × 10⁻¹⁵ cm², which is one order of magnitude higher than those for bulk carbon samples. This information is particularly important for evaluation of ion-engine lifetimes from ground-test measurements in which contaminant carbon is deposited on Mo accelerator grids, potentially altering the sputtering rate of the Mo. Our measurements show that monolayer amounts of carbon on Mo have desorption cross sections that are two orders of magnitude higher than estimates of what would be required to reduce the Mo erosion rate, and thus ground-test measurements can be used with confidence to predict ion-engine wear in space, from this perspective.     

Low energy RBS and SIMS analysis of the SiGe quantum well

The Ge concentration in a MBE grown SiGe and the depth of the quantum well has been quantitatively analysed by means of low energy Rutherford backscattering (RBS) and secondary ion mass spectrometry (SIMS). The concentrations of Si and Ge were supposed to be constant, except for the quantum well, where the nominal germanium concentration was at 5%. Quantitative information was deduced out of raw data by comparison to SIMNRA simulated spectra. With the knowledge of the response function of the SIMS instrument (germanium delta (δ) layer) and using the model of forward convolution (point to point convolution) it is possible to determine the germanium concentration and the thickness of the analysed quantum well out of raw SIMS data.     

单、双洞态镁离子的退激发及末电离态离子分布的研究

在分析双洞相关退激发对双洞态退激发的贡献较小的基础上，依据辐射-俄歇-双俄歇级联退激发模型(RACDA)研究了Mg¹⁺(1s^-1)（K壳层单洞态镁离子）和Mg²⁺(1s^-2)（K壳层双洞态镁离子）的退激发过程，计算了它们的末电离态离子的分布，并与辐射-俄歇级联退激发模型的结果进行了比较.RACDA模型计算的Mg¹⁺(1s^-1)的4价末电离态离子的相对丰度较大，而辐射-俄歇级联退激发模型(RAC)的结果中就没有出现4价离子；两种模型计算Mg²⁺(1s^-2)的6价末电离态离子的丰度非常大，而RAC模型下的Mg²⁺(1s^-2)退激发后不产生6价离子. 关键词： 双洞态退激发 RACDA退激发模型     

Aggregation-based growth of silver nanowires at room temperature

We describe an aggregation-based growth mechanism for formation of silver nanowires at room temperature. It is found that the pH of solution and the concentration of l-cysteine capping molecules have an important effect on the formation and growth of nanowires. Characterization by atomic force microscopy (AFM) and UV-vis spectroscopy recorded as time clearly shows that the silver nanowires are grown at the expense of nanoparticles.