Aluminum-assisted crystallization and <Emphasis Type="Italic">p</Emphasis>-type doping of polycrystalline Si

Aluminum-doped p-type polycrystalline silicon thin films have been synthesized on glass substrates using an aluminum target in a reactive SiH₄+Ar+H₂ gas mixture at a low substrate temperature of 300 °C through inductively coupled plasma-assisted RF magnetron sputtering. In this process, it is possible to simultaneously co-deposit Si–Al in one layer for crystallization of amorphous silicon, in contrast to the conventional techniques where alternating metal and amorphous Si layers are deposited. The effect of aluminum target power on the structural and electrical properties of polycrystalline Si films is analyzed by X-ray diffraction, Raman spectroscopy, scanning electron microscopy and Hall-effect analysis. It is shown that at an aluminum target power of 100 W, the polycrystalline Si film features a high crystalline fraction of 91%, a vertically aligned columnar structure, a sheet resistance of 20.2 kΩ/□ and a hole concentration of 6.3×10¹⁸ cm⁻³. The underlying mechanism for achieving the semiconductor-quality polycrystalline silicon thin films at a low substrate temperature of 300 °C is proposed.     

Synthesis, Characterization, DNA-Binding and Antiproliferative Activity of Nd(III) Complexes With N-(Nitrogen Heterocyclic) Norcantharidin Acylamide Acid

Three novel complexes [Nd(L)(NO₃)(H₂O)₂]·NO₃·2H₂O (HL¹ = N-pyrimidine norcantharidin acylamide acid, C₁₂H₁₃N₃O₄; HL² = N-pyridine norcantharidin acylamide acid, C₁₃H₁₄N₂O₄; HL³ = N-phenyl norcantharidin acylamide acid, C₁₄H₁₅NO₄) were synthesized. HL¹, HL² and HL³ are the ligand of complex(1), complex(2) and complex(3), respectively. Their structures were characterized by elemental analysis, conductivity measurement, infrared spectra and thermogravimetric analysis. The DNA-binding properties of the complexes have been investigated by fluorescence spectroscopy and viscosity measurements. The results suggest that the complexes can bind to DNA by partial intercalation. The liner Stern-Volmer quenching constant K_sq values are 3.3(±0.21)(1), 1.7(±0.19)(2) and 0.9(±0.04)(3), respectively. Complex (1) and (2) have been found to cleave pBR322 plasmid DNA at physiological pH and temperature. The test of antiproliferation activity indicates that complex(1) has strong antiproliferative ability against the SMMC7721 (IC₅₀ = 131.7 ± 23.4 μmol·L⁻¹) and A549 (IC₅₀ = 128.4 ± 19.9 μmol·L⁻¹) cell lines. The inhibition rates of complex(2) (IC₅₀ = 86.3 ± 11.3 μmol·L⁻¹) are much higher than that of NCTD (IC₅₀ = 115.5 ± 9.5 μmol·L⁻¹) and HL² (111.0 ± 5.7 μmol·L⁻¹) against SMMC7721 cell lines.     

Electrical relaxation in proton conductor composites based on (NH4)H2PO4/TiO2

We report on electrical relaxation measurements of (1 − x)NH₄H₂PO₄-xTiO₂ (x = 0.1) composites by admittance spectroscopy, in the 40-Hz–5-MHz frequency range and at temperatures between 303 and 563 K. Simultaneous thermal and electrical measurements on the composites identify a stable crystalline phase between 373 and 463 K. The real part of the conductivity, σ’, shows a power-law frequency dependence below 523 K, which is well described by Jonscher’s expression , where σ ₀ is the dc conductivity, ω _p /2π = f _p is a characteristic relaxation frequency, and n is a fractional exponent between 0 and 1. Both σ ₀ and f _p are thermally activated with nearly the same activation energy in the II region, indicating that the dispersive conductivity originates from the migration of protons. However, activation energies decrease from 0.55 to 0.35 eV and n increases toward 1.0, as the concentration of TiO₂ nanoparticles increases, thus, enhancing cooperative correlation among moving ions. The highest dc conductivity is obtained for the composite x = 0.05 concentration, with values above room temperature about three orders of magnitude higher than that of crystalline NH₄H₂PO₄ (ADP), reaching values on the order of 0.1 (Ω cm)^− 1 above 543 K.     

Electrical properties,equivalent circuit,and dielectric relaxation studies on [(C<Subscript>3</Subscript>H<Subscript>7</Subscript>)<Subscript>4</Subscript>N]<Subscript>2</Subscript>Cd<Subscript>2</Subscript>Cl<Subscript>6</Subscript> polycrystalline

The Ac electrical conductivity and the dielectric relaxation properties of the [(C₃H₇)₄N]₂Cd₂Cl₆ polycrystalline sample have been investigated by means of impedance spectroscopy measurements over a wide range of frequencies and temperatures, 209 Hz–5 MHz and 361–418 K, respectively. The purpose is to make a difference between the electrical and dielectric properties of the polycrystalline sample and single crystal. Besides, a detailed analysis of the impedance spectrum suggests that the electrical properties of the material are strongly temperature-dependent. Plots of (Z" versus Z') are well fitted to an equivalent circuit model consisting of a series combination of grains and grains boundary elements. Moreover, the temperature dependence of the electrical conductivity in the different phases follows the Arrhenius law and the frequency dependence of σ (ω) follows the Jonscher’s universal dynamic law. Furthermore, the modulus plots can be characterized by full width at half height or in terms of a nonexperiential decay function φ(t) = exp(t/t)^β. Finally, the imaginary part of the permittivity constant is analyzed with the Cole–Cole formalism.     

Some remarks on the ionic conductivity in NaY dehydrated zeolite

On the basis of experimental measurements of the electrical conductivity of the Nafaujasite zeolites (NaY), treated under vacuum up to 673 K for 24 hours, we clearly demonstrate that the behavior of the measured conductivity σ_ac of the dehydrated zeolite NaY, over an interval of high frequency change, may be described by a power-law function: σ_ac=A▹^s. The exponent s, in this case, should be considered as temperature and frequency dependent when the parameter A is a temperature dependent function. On the other hand, when considering the measured conductivity as a sum of two terms (σ_ac=σ₀+σ′(▹)) resulting from the contributions of the dc and the ac components respectively, we find that one of them obeys the Arrhenius law while the other can be expressed as A▹^s. Parameter s is practically frequency independent when the frequency of the applied electrical field is higher than a characteristic value ▹_c A comparison with the measurements performed on NaY dehydrated at 435 K is also included. Paper presented at the 2nd Euroconference on Solid State Ionics, Funchal, Madeira, Portugal, Sept. 10–16, 1995     

Electrical conductivity and chemical stability of perovskite-type BaCe0.8-xTixY0.2O3-δ

Here we report the synthesis, chemical stability, and electrical conductivity of Ti-doped perovskite-type BaCe_0.8-x Ti _x Y_0.2O_3-δ (x = 0.05, 0.1, 0.2, and 0.3; BCTY). Samples were synthesized by conventional solid state (ceramic) reaction from corresponding metal salts and oxides at elevated temperature of 1,300–1,500 °C in air. The powder X-ray diffraction confirmed the formation of a simple cubic perovskite-type structure with a lattice constant of a = 4.374(1), 4.377(1), and 4.332(1) ? for x = 0.05, 0.1, and 0.2 members of BCTY, respectively. Like BaCe_0.8Y_0.2O_3-δ (BCY), Ti substituted BCTY was found to be chemically not stable in 100% CO₂ and form BaCO₃ at elevated temperature. The bulk electrical conductivity of BCTY decreased with increasing Ti content and the x = 0.05 member exhibited the highest conductivity of 2.3 × 10⁻³ S cm⁻¹ at 650 °C in air, while a slight increase in the conductivity, especially at low temperatures (below 600 °C), was observed in humidified atmospheres.     

Structure,thermal properties,conductivity and electrochemical stability of di-urethanesil hybrids doped with LiCF<Subscript>3</Subscript>SO<Subscript>3</Subscript>

Variable chain length di-urethane cross-linked poly(oxyethylene) (POE)/siloxane hybrid networks were prepared by application of a sol-gel strategy. These materials, designated as di-urethanesils (represented as d-Ut(Y′), where Y′ indicates the average molecular weight of the polymer segment), were doped with lithium triflate (LiCF₃SO₃). The two host hybrid matrices used, d-Ut(300) and d-Ut(600), incorporate POE chains with approximately 6 and 13 (OCH₂CH₂) repeat units, respectively. All the samples studied, with compositions ∞ > n ≥ 1 (where n is the molar ratio of (OCH₂CH₂) repeat units per Li⁺), are entirely amorphous. The di-urethanesils are thermally stable up to at least 200 °C. At room temperature the conductivity maxima of the d-Ut(300)- and d-Ut(600)-based di-urethanesil families are located at n = 1 (approximately 2.0 × 10⁻⁶ and 7.4 × 10⁻⁵ Scm⁻¹, respectively). At about 100 °C, both these samples also exhibit the highest conductivity of the two electrolyte systems (approximately 1.6 × 10⁻⁴ and 1.0 × 10⁻³ Scm⁻¹, respectively). The d-Ut(600)-based xerogel with n = 1 displays excellent redox stability.     

Electrical characterization of the [N(CH<Subscript>3</Subscript>)<Subscript>4</Subscript>][N(C<Subscript>2</Subscript>H<Subscript>5</Subscript>)<Subscript>4</Subscript>]ZnCl<Subscript>4</Subscript> compound

The [N(CH₃)₄][N(C₂H₅)₄]ZnCl₄ compound has been synthesized by a solution-based chemical method. The X-ray diffraction study at room temperature revealed an orthorhombic system with P2₁2₁2 space group. The complex impedance has been investigated in the temperature and frequency ranges 420–520 K and 200 Hz–5 MHz, respectively. The grain interior and grain boundary contribution to the electrical response in the material have been identified. Dielectric data were analyzed using the complex electrical modulus M ^* for the sample at various temperature. The modulus plots can be characterized by full width at half height or in terms of a non-exponential decay function ϕ(t) = exp[(−t/τ) ^β ]. The detailed conductivity study indicated that the electrical conduction in the material is a thermally activated process. The variation of the AC conductivity with frequency at different temperatures obeys the Almond and West universal law.     

<Superscript>29</Superscript>Si MAS-NMR study of oxide conductors derived from the apatite-type La<Subscript>9.33</Subscript>Si<Subscript>6</Subscript>O<Subscript>26</Subscript> compound

The preparation of (La_9.33−2x/3Sr _x □_0.67−x/3)Si₆O₂₄O₂ (0 ≤ x ≤ 2) samples with different amounts of cation vacancies is reported. Structure and unit-cell parameters were deduced by Rietveld analysis of XRD patterns. Structural features that enhance oxygen conductivity in Sr-doped apatites are discussed. Up to three components were detected in ²⁹Si MAS-NMR spectra which change with the amount and distribution of cation vacancies. In general, oxygen conductivity increases with the amount of vacancies at La1 (6h) sites, passing through a maximum for x = 0.4. In the case of activation energy, a minimum is detected near x = 1.2, indicating that entropic and enthalpic change in different ways. The presence of cation vacancies should enhance oxygen hopping along c-axis; however, the analysis of the frequency dependence of conductivity suggests that oxygen motions are produced along three axes.     

The NASICON solid solution Li1−x La x /3Zr2(PO4)3: optimization of the sintering process and ionic conductivity measurements

The Li_1−x La _{x /3}Zr₂(PO₄)₃ NASICON-type compounds (0 ≤ x ≤ 1) have been synthesized in powder form by a sol-gel method and sintered for ionic conductivity measurements. In order to improve the compactness of the ceramic without decomposition of the compound, several sintering processes have been tested for one member of the solid solution (x = 0.6): the use of sintering aids (ZnO, B₂O₃, TiO₂ and LiNO₃), a ball-milling of the synthesized powder, a flash heating, high isostatic pressure, and spark plasma sintering. Finally, a satisfactory compactness of 85% is obtained compared to the referenced value (63%) obtained by uniaxial and isostatic pressing. The ionic conductivity study was performed by impedance spectroscopy. It shows that, despite the formation of vacancies, the substitution Li⁺→ 1/3 La³⁺ + 2/3 □ has unfortunately no influence on the conduction for 0 ≤ x ≤ 0.7 since the ionic conductivity remains identical to the LiZr₂(PO₄)₃ one. For higher x values, the ionic conductivity strongly decreases.     

A-site deficient lanthanum-calcium chromite-titanates doped with 3d transition metals: synthesis,oxygen nonstoichiometry,electrical conductivity,and catalytic activity

Six (M = Cr, Mn, Fe, Co, Ni, Cu) and two (M = Ni, Cu) single-phase compositions were prepared by conventional solid-state reactions. Oxygen nonstoichiometry, electrical conductivity, phase transformations under reduction-reoxidation at high temperatures and catalytic activity for hydrocarbons oxidation of these compositions were investigated in a wide temperature and oxygen partial pressure range. The Cu-, Ni-, Co-, and Fe-containing compositions are decomposed in reducing Ar/H₂O/H₂ atmosphere with pH₂O / pH₂ = 0.3 at 1,000 °C, while the Cr- and Mn-containing ceramics remain stable at the same conditions. The metallic particles of the added 3d elements formed after decomposition were registered by X-ray diffraction method in case of Cu- and Ni-containing compositions. These formed composites can be completely reoxidized with formation of initial compositions by treatment in air at 1,000 °C. The electrical conductivity of the ceramics investigated in air and Ar/H₂O/H₂ gas flow increases with rising M content. The highest catalytic activity for oxidation of CH₄ and C₃H₆, which was comparable with the activity of the composite, shows the Cu-containing powders. Dedicated to Prof. Dr. Werner Weppner     

Selective response of DPPV/zeolite composites toward acetone,methanol, and n-heptane vapors

In this work, doped poly(p-phenylene vinylene)/zeolite composites was prepared to detect the three different chemical vapors (acetone, methanol, and n-heptane) and to investigate the effects of zeolite type, chemical vapor type, and vapor concentration based on the electrical conductivity response and selectivity properties of the sensing materials. Before blending with PPV, zeolite Y (Si/Al?=?5.1 and Na⁺), mordenite (Si/Al?=?18 and Na⁺), and 5A (LTA) (Si/Al?=?1.0 and Na⁺) were ion exchanged with Cu²⁺ at 80 % ion exchanged to prepare 80CuNaY, 80CuNaMOR, and 80CuNa5A. 80CuNaY exhibited the highest electrical conductivity response under acetone and methanol exposures while 80CuNaMOR showed the highest response in n-heptane exposure which depended on the adsorption and solubility properties of each porous material. When adding doped poly(p-phenylene vinylene) (dPPV) into the 80CuNaY matrix, the minimum detection vapor concentration decreased in acetone, methanol, and n-heptane vapors. For the selectivity, the composite between 80CuNaY and dPPV responded only in the polar vapors (acetone, methanol) whereas the composite between dPPV and 80CuNaMOR or dPPV_[90]80CuNaMOR responded only in the nonpolar vapor (n-heptane). The interactions between the sensing materials and the chemical vapors were investigated and identified by FTIR and AFM techniques.     

MeV Al+ and Al2+ ions implantation in Si(100): surface roughness and defects in the bulk

This paper deals with the implantation of high-energy (1.0–3.0 MeV) atomic and molecular Al⁺ ions in Si(100) to a fluence of 5×10¹⁴ Al atoms/cm² at room temperature. The molecular effect, i.e. the increase of the displacement yield compared with the sum of the atomic yields, and the damage formation as well as defect behaviour after annealing have been investigated. A detailed experimental study has been made of the evolution of extended secondary defects which form during thermal anneals of Al⁺ or Al₂ ⁺ irradiated silicon. The samples have been examined using combined Rutherford backscattering and channeling experiments together with transmission electron microscopy observations. The surface structure of the implanted wafers has been measured by atomic force microscopy. The results for the implantation-induced roughness at the Si surface, resulting from Al⁺ or Al₂ ⁺ irradiation at the same energy/atom, total atomic fluence, flux rate, and irradiation temperature, are presented and discussed. Received: 19 August 1999 / Accepted: 20 October 1999 / Published online: 23 February 2000     

Towards a thin films electrochromic device using NASICON electrolyte

The optimisation of the morphology of WO₃ thin films allowed a more efficient electrochromic colouring using Na⁺ ions than H⁺ ones. Therefore, sodium superionic conductor (Na₃Zr₂Si₂PO₁₂, NASICON) films may be used as electrolyte in inorganic electrochromic devices. In this paper, the structure, chemical composition, morphology and electrochromic properties of WO₃, ZnO:Al and Na₃Zr₂Si₂PO₁₂ thin films were studied to develop a novel type of electrochromic device. WO₃, ZnO:Al and Na₃Zr₂Si₂PO₁₂ thin films were deposited using reactive magnetron sputtering of tungsten, zinc and aluminium and Zr–Si and Na₃PO₄ targets, respectively. For transparent conductive oxide coatings, a correlation was established between the deposition parametres and the film’s structure, transmittance and electrical resistivity. Classical sputtering methods were not suitable for the deposition of NASICON films on large surface with homogenous composition. On the other hand, the use of high-frequency pulsed direct current generators allowed the deposition of amorphous films that crystallised after thermal annealing upon 700 °C in the Na₃Zr₂Si₂PO₁₂ structure. Amorphous films exhibited ionic conductivity close to 2 × 10⁻³ S cm⁻¹. Finally, preliminary results related to the electrochromic performance of NASICON, WO₃ and indium tin oxide devices were given. Paper presented at the 11th EuroConference on the Science and Technology of Ionics, Batz-sur-Mer, France, Sept. 9–15, 2007.     

Synthesis and Fluorescence Properties of Lanthanide (III) Perchlorate Complexes with Naphthyl-Naphthalinesulphonylpropyl Sulfoxide

A ligand with double sulfinyl groups, naphthyl-naphthalinesulphonylpropyl sulfoxide(dinaphthyl disulfoxide, L), was synthesized by a new method and its several lanthanide (III) complexes were synthesized and characterized by element analysis, molar conductivity, coordination titration analysis, IR, TG-DTA, ¹HNMR and UV spectra. The composition of these complexes, were RE₂(ClO₄)₆·(L)₅·nH₂O (RE = La, Nd, Eu, Tb, Yb, n = 2 ∼ 6, L = C₁₀H₇SOC₃H₆SOC₁₀H₇). The fluorescent spectra illustrated that the Eu (III) complex had an excellent luminescence. It was supposed that the ligand was benefited for transferring the energy from ligand to the excitation state energy level (⁵D₀) of Eu (III). The Tb (III) complex displayed weak luminescence, which attributed to low energy transferring efficiency between the average triplet state energy level of ligand and the excited state (⁵D₄) of Tb (III). So the Eu (III) complex displayed a good antenna effect for luminescence. The phosphorescence spectra and the relationship between fluorescence lifetime and fluorescence intensity were also discussed.     

Syntheses and Fluorescence Properties of Two Novel Lanthanide (III) Perchlorate Complexes with Bis(benzylsulfinyl)methane

A novel ligand with double sulfinyl groups, bis(benzylsulfinyl)methane, was synthesized by a new method and its two lanthanide (III) complexes were synthesized and characterized by element analysis, molar conductivity, coordination titration analysis, IR, TG-DSC, ¹HNMR and UV spectra. The results indicated that the composition of these complexes was REL_2.5(ClO₄)₃·3H₂O (RE = Tb (III), Dy (III), L = C₆H₅CH₂SOCH₂SOCH₂C₆H₅). The FT-IR results revealed that the perchlorate group was bonded with the lanthanide ion by the oxygen atoms, and the coordination was bidentate. The fluorescent spectra illustrated that both the Tb (III) and Dy (III) complexes displayed characteristic fluorescence in solid state, especially for the Tb (III) complex, the peak of ⁵D₄ → ⁷ F₅ of the Tb (III) ion in 544 nm was stronger than that of others. It indicated that the Tb (III) complex could emit purer green fluorescence. By analysis fluorescence and phosphorescence spectra, it was found that the ligand had the advantage to absorb energy and transfer it to the Tb (III) and Dy (III) ions. The phosphorescence spectra and fluorescence lifetimes of the complexes were also measured.     

Surface morphology of MgO (100) crystals implanted with MeV Al+ and Al2+ ions

MgO (100) single crystals are implanted with 1.50-MeV Al⁺ and 3.00-MeV Al₂ ⁺ ions at a fluence of 1×10¹⁵ Al  atoms  cm^-2 under high-vacuum conditions. The surface morphology of the substrate is measured in air using atomic force microscopy and X-ray reflectometry followed by computer-simulated spectrum analysis. The ion-irradiated areas are found to protrude to different heights on the nanometre scale. Small height differences are observed in the areas irradiated by Al⁺ and Al₂ ⁺ ions of comparable energy, dose rate and total fluence. The results indicate that protrusions are most likely caused by implantation-induced point defects (vacancies) generated in the crystal during implantation. Other possibilities for the cause of protrusions are discussed. Thermal treatment stimulates a partial recovery of the implantation damage and alters the topography of MgO surfaces. Received: 22 May 2001 / Accepted: 30 May 2001 / Published online: 25 July 2001     

Wetting behavior of Al–Si–Mg alloys on Si3N4/Si substrates: optimization of processing parameters

The wetting behavior of Al–Si–Mg alloys on Si₃N₄/Si substrates has been investigated using the sessile drop technique. Based on a Taguchi experiment design, the effect of the following processing parameters on the contact angle (θ) and surface tension (σ_LV) was studied: processing time and temperature, atmosphere (Ar and N₂), substrate surface condition (with and without a silicon wafer), as well as the Mg and Si contents in the aluminium alloy. In nitrogen, non-wetting conditions prevail during the isothermal events while in argon a remarkable non-wetting to wetting transition leads to contact angles θ as low as 11±3° and a liquid surface tension σ_LV of 33± 10×10^-5 kJ/m². According to the multiple analysis of variance (Manova), the optimum conditions for minimizing the values of θ and σ_LV are as follows: temperature of 1100 °C, processing time of 90 min, argon atmosphere, no use of a silicon wafer, and the use of the Al-18% Mg-1% Si alloy. A verification test conducted under the optimized conditions resulted in a contact angle of θ=9±3° and a surface tension of σ_LV=29± 9×10^-5 kJ/m², both indicative of excellent wetting. PACS 68.03.Cd; 81.05.Bx; 68.08.Bc; 05.70.-a; 61.10.Nz     

Variable-temperature FT-IR studies on the thermodynamics of carbon dioxide adsorption on a faujasite-type H-Y zeolite

Adsorption of carbon dioxide on a faujasite-type H-Y zeolite (Si:Al = 2.6:1) was studied by variable-temperature (200-290 K range) infrared spectroscopy. Adsorbed CO₂ molecules interact with the Brønsted acid Si(OH)Al groups located inside the zeolite supercage, bringing about a characteristic bathochromic shift of the O-H stretching mode from 3645 cm⁻¹ (free OH group) to 3540 cm⁻¹ (hydrogen-bonded CO₂ adsorption complex). Simultaneously, the asymmetric (ν₃) mode of adsorbed CO₂ is observed at 2353 cm⁻¹. From the observed variation of the integrated intensity of the 3645 and 2353 cm⁻¹ IR absorption bands upon changing temperature, corresponding values of standard adsorption enthalpy and entropy were found to be ΔH° = −28.5(±1) kJ mol⁻¹ and ΔS° = −129(±10) J mol⁻¹ K⁻¹. Comparison with the reported values of ΔH° for CO₂ adsorption on other zeolites is briefly discussed.     

Properties of superconducting Nb/Al/Nb/Al?AlOx?Al?AlOx?Al/Nb/Al/Nb tunnel junctions

Modified geometry (MG) devices, Nb/Al/Nb/Al−AlO_x−Al−AlO_x−Al/Nb/Al/Nb, have been fabricated and investigated in comparison with the basic geometry (BG) double-barrier Nb/Al−AlO_x−Al−AlO_x−Al/Nb devices. The enhancement of the critical temperature in the Al film is found to be weaker for the MG devices as compared with the BG devices at temperatures nearT=4.2 K but stronger at lowT. Indication of an enhancement of dc Josephson critical current density,j _c , at bias voltageV≠0 as compared withj _c (V=0) has been observed in the MG devices for the first time.