Preparation and photoluminescence properties of silica-coated CuO nanowires

We have fabricated cupric oxide (CuO)-core/silica (SiO _x )-shell nanowires by using a two-step process: thermal oxidation and sputtering. The structure and photoluminescence (PL) properties of the core/shell nanowires has been investigated by using scanning electron microscopy, transmission electron microscopy, X-ray diffraction and PL analysis techniques. The CuO cores and the SiO _x shells of the as-synthesized nanowires have crystalline monoclinic CuO and amorphous SiO _x structures, respectively. The PL emission intensity of the CuO-core/SiO _x -shell nanowires has been increased but the emission peak position has not been nearly shifted by annealing in a nitrogen atmosphere, whereas the emission peak position has been shifted a lot from 510 to around 650 nm as well as the emission intensity has been increased by annealing in an oxygen atmosphere. In addition, the origin of the PL enhancement in the CuO-core/SiO _x -shell nanowires by annealing and the growth mechanism of the CuO nanowires have been discussed.     

Mesoporous TiO2-B nanowires synthesized from tetrabutyl titanate

Ultralong mesoporous TiO₂-B nanowires were synthesized via a hybrid hydrothermal-ion exchanging-thermal treatment using tetrabutyl titanate (TBOT) as a raw material. The phase transformations and porous structures of TiO₂-B nanowires were characterized and studied by X-ray diffraction (XRD), transmission electron microscopy (TEM) and N₂ adsorption-desorption measurement. Mesoporous TiO₂-B nanowires showed a length of several micrometers and diameter of about 25 nm. The porous structures of obtained TiO₂-B nanowires were demonstrated by BJH pore distribution measurement. The wirelike morphologies and porous structures of monodisperse nanowires calcined at 600 °C showed little change, which indicated that such nanowires possessed high thermal stability. The formation mechanism of TiO₂-B nanowires with mesoporous structures were also discussed based on our experimental results.     

Effect of heat treatment on morphology, crystalline structure and photocatalysis properties of TiO2 nanotubes on Ti substrate and freestanding membrane

Highly ordered titanium oxide (TiO₂) nanotubes were prepared by electrolytic anodization of titanium electrodes. Morphological evolution and phase transformations of TiO₂ nanotubes on a Ti substrate and that of freestanding TiO₂ membranes during the calcinations process were studied by scanning electron microscopy, transmission electron microscopy, and X-ray diffraction microscopy. The detailed results and mechanisms on the morphology and crystalline structure were presented. Our results show that a compact layer exists between the tubular layer and Ti substrate at 600 °C, and the length of the nanotubes shortens dramatically at 750 °C. The freestanding membranes have many particles on their tubes during calcinations from 450 to 900 °C. The TiO₂ nanotubes on the Ti substrate transform to rutile crystals at 600 °C, while the freestanding TiO₂ membranes retain an anatase crystal with increasing temperature to 800 °C. The photocatalytic activity of TiO₂ nanotubes on a Ti substrate annealed at different temperatures was investigated by the degradation of methyl orange in aqueous solution under UV light irradiation. Due to the anatase crystals in the tubular layer and rutile crystals in the compact layer, TiO₂ nanotubes annealed at 450 °C with pure anatase crystals have a better photocatalytic activity than those annealed at 600 °C or 750 °C.     

Photoluminescence of ZnO nanowires dependent on O2 and Ar annealing

High-purity ZnO nanowires have been synthesized on Si substrates without the presence of a catalyst at 600 °C by a simple thermal vapor technique. Photoluminescence (PL) spectra of the annealed samples at 900 °C under oxygen and argon gases have been investigated. After O₂ or Ar annealing, the PL visible-emission intensity that is related to intrinsic defects (oxygen vacancies) is greatly reduced compared with as-grown ZnO nanowires because the oxygen-gas ions or oxygen interstitials diffuse into the oxygen vacancies during annealing process. The blue-band peak of the O₂- or Ar-annealed ZnO naonowires is also smaller than the green-band peak in the visible broadband because of the reduction of oxygen vacancies. Therefore, the main intrinsic defects (oxygen vacancies) of as-grown ZnO nanowires can be reduced by O₂ or Ar annealing, which is an important procedure for the development of advanced optoelectronic ZnO nanowire devices.     

A comparison between optical properties of TiO2 nanowires obtained by EMA method and experiment

Optical properties of TiO₂ nanowires, synthesized by two-step thermal evaporation process, have been studied experimentally and theoretically. Based on the theoretical method optical constants of nanowires have been calculated with the use of the effective medium approximation (EMA). As evidenced by X-ray diffraction patterns our synthesized nanowires, whose diameters and lengths were within the ranges of 50-90 nm and 500-1500 nm, respectively, were found to be crystalline rutile TiO₂ with the major refraction being along the (1 1 0) direction. The experimental data of the reflectance of TiO₂ nanowires has been obtained using spectrometer in wavelength 250-800 nm, and then, compared with the spectrum of reflectance predicted by the EMA theoretical model. Our measured experimental optical data has been found to be in good accord with our predicted results spectrum with the use of the EMA modeling; this agreement indicates that our estimation of the volume fraction from atomic force microscopy (AFM) data was accurate.     

Photocatalytic behavior of heavy La-doped TiO2 films deposited by pulsed laser deposition using non-sintered target

We have investigated the control of photocatalytic behavior under deposited conditions of non-sintered target of different molar ratios with TiO₂ and La₂O₃ from 1:0 to 1:2 for heavily La doping, and post-annealing temperature from 600 °C to 1000 °C for crystallizing by pulsed laser deposition. We have successfully crystallized heavily La-doped TiO₂ films with post-annealing temperature over 800 °C and with molar ratio of TiO₂:La₂O₃ over 1:1 on a quartz substrate. Heavily La-doped TiO₂ films are observed the decomposition of methylene blue and a water-splitting reaction in photocatalytic behavior under Xe light irradiation. When stoichiometric La-doped TiO₂ (TiO₂:La₂O₃ = 1: 1) is synthesized with heat-treatment at 900 °C, the best results are obtained under photocatalytic behavior and pure La₂Ti₂O₇ crystalline were obtained.     

Synthesis process of nanowired Al/CuO thermite

Al/CuO nanothermites were fabricated by thermal oxidation of copper layer at 450 °C for 5 h and by aluminum thermal evaporation: thermal evaporation allows producing thin layer less than 2 μm in size. The copper has been deposited by electroplating or thermal evaporation depending on the required thickness. The obtained diameter of Al/CuO nanowires is 150-250 nm. Al/CuO nanowires composite were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), differential scanning calorimetry (DSC) and differential thermal analysis (DTA). Two distinct exothermic reactions occurred at 515 and 667 °C and total energy release of this thermite is 10 kJ/cm³.     

Enhancement in the photoluminescence of ZnS nanowires by TiO2 coating and thermal annealing

Influences of the TiO₂ coating and thermal annealing on the photoluminescence (PL) properties of ZnS nanowires were investigated. ZnS nanowires were synthesized by thermal evaporation of ZnS powder and then coated with TiO₂ by using the sputtering technique. The PL emission of ZnS nanowires can be significantly enhanced without nearly changing the wavelength of the emission by coating them with a TiO₂ layer with an appropriate thickness and then annealing them in an Ar atmosphere. The optimum TiO₂ coating layer thickness for the highest PL emission enhancement was found to be about 6.5 nm. The PL emission of the ZnS-core/TiO₂-shell coaxial nanowires is degraded by annealing in an oxygen atmosphere whereas it is enhanced by annealing in an argon atmosphere.     

Synthesis of anatase TiO2 nanowires by modifying TiO2 nanoparticles using the microwave heating method

Anatase TiO₂ nanowires with a diameter of 5-10 nm and length of 500 nm to 2 μm have been successfully synthesized by modifying TiO₂ nanoparticles (P25) using the microwave heating method. The microwave power, reaction pressure, and reaction time for the synthesis of TiO₂ nanowires were 500 W, 0.5-3.0 MPa (corresponding to a temperature range of 175-260), and 40-70 min, respectively. X-ray diffraction (XRD), field-emission scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), and the BET techniques were used to investigate the phase structures, morphologies, and specific surface areas of the TiO₂ nanowires. The effects of reaction time, pressure, and different post-treatment processes on the microstructures of TiO₂ nanowires were discussed. It has been shown that the microwave heating method is efficient in transforming TiO₂ nanoparticles to anatase TiO₂ nanowires.     

Fabrication, morphology, and photoluminescence properties of GaN nanowires and nanorods by ammoniating Ga2O3/V films on Si(1 1 1)

GaN nanowires and nanorods have been successfully synthesized on Si(1 1 1) substrates by magnetron sputtering through ammoniating Ga₂O₃/V films at 900 °C in a quartz tube. X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), and photoluminescence (PL) spectrum were carried out to characterize the structure, morphology, and photoluminescence properties of GaN sample. The results show that the GaN nanowires and nanorods with pure hexagonal wurtzite structure have good emission properties. The growth direction of nanostructures is perpendicular to the fringes of (1 0 1) plane. The growth mechanism is also briefly discussed.     

Synthesis and photoluminescence of aligned straight silica nanowires on Si substrate

Aligned straight silica nanowires (NWs) have been synthesized on Si wafer by thermal evaporation of mixed powders of zinc carbonate hydroxide and graphite at 1100 °C and condensation on Si substrate without using any catalyst. The straight silica NWs have diameters ranging from 50 to 100 nm, and lengths of several micrometers, with cone-shaped tips at their ends. High deposition temperature and relatively high SiO_x vapor concentration near the growth substrate would be beneficial to the formation of the aligned straight silica NWs. Different morphologies of silica nanostructures have also been obtained by varying the deposition temperature and the vapor concentration of the SiO_x molecules. Room temperature photoluminescence measurements on the oriented silica NWs show that two green emission bands at 510 and 560 nm, respectively, revealing that the aligned straight silica NWs might have potential applications in the future optoelectronic devices.     

Preparation of transparent conductive TiO2:Nb thin films by pulsed laser deposition

This study investigated the optical and electrical properties of Nb-doped TiO₂ thin films prepared by pulsed laser deposition (PLD). The PLD conditions were optimized to fabricate Nb-doped TiO₂ thin films with an improved electrical conductivity and crystalline structure. XRD analyses revealed that the deposition at room temperature in 0.92 Pa O₂ was suitable to produce anatase-type TiO₂. A Nb-doped TiO₂ thin film attained a resistivity as low as 6.7 × 10⁻⁴ Ω cm after annealing at 350 °C in vacuum (<10⁻⁵ Pa), thereby maintaining the transmittance as high as 60% in the UV-vis region.     

Synthesis and characterization of GaN nanowires by ammoniating Ga2O3/Cr thin films deposited on Si(1 1 1) substrates

GaN nanowires have been successfully synthesized on Si(1 1 1) substrates by magnetron sputtering through ammoniating Ga₂O₃/Cr thin films at 950 °C. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), FT-IR spectrophotometer, scanning electron microscopy (SEM), high-resolution transmission electron microscopy (TEM), and photoluminescence (PL) spectrum were carried out to characterize the microstructure, morphology, and optical properties of GaN samples. The results demonstrate that the nanowires are single-crystal GaN with hexagonal wurtzite structure and high-quality crystalline, have the size of 30-80 nm in diameter and several tens of microns in length with good emission properties. The growth direction of GaN nanowires is perpendicular to the fringe of (1 0 1) plane. The growth mechanism of GaN nanowires is also discussed in detail.     

Effect of Li2O and CoO-doping of CuO/Fe2O3 system on its surface and catalytic properties

Physicochemical, surface and catalytic properties of pure and doped CuO/Fe₂O₃ system were investigated using X-ray diffraction (XRD), energy dispersive X-ray analysis (EDX), nitrogen adsorption at −196 °C and CO-oxidation by O₂ at 80-220 °C using a static method. The dopants were Li₂O (2.5 mol%) and CoO (2.5 and 5 mol%). The results revealed that the increase in precalcination temperature from 400 to 600 °C and Li₂O-doping of CuO/Fe₂O₃ system enhanced CuFe₂O₄ formation. However, heating both pure and doped solids at 600 °C did not lead to complete conversion of reacting oxides into CuFe₂O₄. The promotion effect of Li₂O dopant was attributed to dissolution of some of dopant ions in the lattices of CuO and Fe₂O₃ with subsequent increase in the mobility of reacting cations. CoO-doping led also to the formation of mixed ferrite Co_xCu_1−xFe₂O₄. The doping process of the system investigated decreased to a large extent the crystallite size of unreacted portion of Fe₂O₃ in mixed solids calcined at 600 °C. This process led to a significant increase in the S_BET of the treated solids. Doping CuO/Fe₂O₃ system with either Li₂O or CoO, followed by calcination at 400 and 600 °C decreased its catalytic activity in CO-oxidation by O₂. However, the activation energy of the catalyzed reaction was not much affected by doping.     

Preparation and characterization of iodine-doped mesoporous TiO2 by hydrothermal method

Iodine-doped mesoporous TiO₂ (I/TiO₂) was prepared by hydrothermal method, using tetrabutyl titanate as precursor, potassium iodate as iodine sources. The as-prepared I/TiO₂ catalysts were characterized by UV-vis, XRD, TEM, BET, TG/DTA, XPS and photoluminescence (PL) spectroscopy. Production of OH radicals on the I/TiO₂ surface was detected by the PL technique using terephthalic acid as a probe molecule. The effects of hydrothermal reaction temperature, calcination temperature and iodine doping content on the structure and properties of the catalysts were investigated. The results showed that iodine-doped TiO₂ calcinated at 300 °C have good anatase crystal. The optimal hydrothermal conditions have been determined to be that reaction temperature 120 °C, calcinated temperature 300 °C and added 1.16 mmol iodine dopants. The average particle size of I/TiO₂ synthesized under optimal condition (I-3 sample) is about 3.9 nm. The I-3 photocatalyst contains 100% anatase crystalline phase of TiO₂. BET specific surface area of I-3 sample is184.8 m² g⁻¹ and is 3.67 times that of pure TiO₂ (50.37 m² g⁻¹). Iodine in I/TiO₂ catalyst mainly exists in the form of I₂, and photoactivity of I/TiO₂ catalyst in visible light comes from photosensitize of I₂. I/TiO₂ catalysis shows very high efficiency for the degradation of phenol under visible light.     

Reaction products and oxide thickness formed by Ti out-diffusion and oxidization in poly-Pt/Ti/SiO2/Si with oxide films deposited

In the paper, we present experimental results to enhance the understanding of Ti out-diffusion and oxidization in commercial poly-Pt/Ti/SiO₂/Si wafers with perovskite oxide films deposited when heat-treated in flowing oxygen ambient. It indicates that when heat-treated at 550 and 600 °C, PtTi₃+PtTi and PtTi are the reaction products from interfacial interaction, respectively; while heat-treated at 650 °C and above, the products become three layers of titanium oxides instead of the alloys. Confirmed to be rutile TiO₂, the first two layers spaced by 65 nm encapsulate the Pt surface by the first layer with 60 nm thick forming at its surface and by the next layer with 35 nm thick inserting its original layer. In addition, the next layer is formed as a barrier to block up continuous diffusion paths of Ti, and thus results in the last layer of TiO_2−x formed by the residual Ti oxidizing.     

Synthesis of In-doped Ga2O3 zigzag-shaped nanowires and optical properties

In-doped Ga₂O₃ zigzag-shaped nanowires and undoped Ga₂O₃ nanowires have been synthesized on Si substrate by thermal evaporation of mixed powders of Ga, In₂O₃ and graphite at 1000 °C without using any catalyst via a vapor-solid growth mechanism. The morphologies and microstructures of the products were characterized by field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS) and photoluminescence spectroscopy (PL). The nanowires range from 100 nm to several hundreds of nanometers in diameter and several tens of micrometers in length. A broad emission band from 400 to 700 nm is obtained in the PL spectrum of these nanowires at room temperature. There are two blue-emission peaks centering at 450 and 500 nm, which originate from the oxygen vacancies, gallium vacancies and gallium-oxygen vacancy pairs.     

Characterization of SnO2 obtained from the thermal oxidation of vacuum evaporated Sn thin films

Tin oxide has been prepared by thermal oxidation of evaporated tin thin films onto pyrex glass substrates. Films oxidation was achieved in air at a temperature of 600 °C with varied duration from 20min to 3 h. Structural, optical and electrical properties of the films were characterized by means of X-ray diffraction, UV–vis spectroscopy and electrical resistivity measurements respectively. The X-ray analysis revealed the transformation of Sn into SnO₂ with preferential orientation along (101) plans. No intermediate phases such as SnO and Sn₃O₄ were evidenced. It was also found that the SnO₂ crystallites orientation changed with the annealing time due to the strain energy effect. Both band gap energy and electrical resistivity decrease with annealing time due to the crystalline quality improvement and films densification. We have noticed that oxidation at 600 °C for 3 h leads to transparent and conductive films with suitable properties for photovoltaic applications.     

A novel strategy to synthesize cobalt hydroxide and Co3O4 nanowires

Cobalt hydroxide ultra fine nanowires were prepared by a facile hydrothermal route using hydrogen peroxide. This method provides a simple, low cost, and large-scale route to produce β-cobalt hydroxide nanowires with an average diameter of 5 nm and a length of ca. 10 μm, which show a predominant well-crystalline hexagonal brucite-like phase. Their thermal decomposition produced highly uniform nanowires of cobalt oxide (Co₃O₄) under temperature 500 °C in the presence of oxygen gas. The produced cobalt oxide was characterized by X-ray diffraction, transmission electronic microscopy, and selected-area electron diffraction. The results indicated that cobalt oxide nanowires with an average diameter of 10 nm and a length of ca. 600 nm have been formed, which show a predominant well-crystalline cubic face-centered like phase.     

EPR study of nitrogen-doped mesoporous TiO2 powders

Mesoporous titanium dioxide powders were synthesized by the sol-gel route either directly or using the P123 templating agent and nitrogen doping from thiourea. X-ray diffraction studies show that doping and structuring give rise to rutile growth at a relatively low temperature of 400 °C compared to the transition point of pure TiO₂, which is close to 900 °C. Systematic EPR experiments were performed in order to monitor the involved paramagnetic centres with respect to calcination treatments and also to probe the nitrogen doping efficiency in the host media. Several paramagnetic species were found in these mesostructured samples mainly with oxygen radicals for calcinations at 400 °C, while nitrogen centres appear for calcination temperature as high as 500 °C. The effect of material microstructure on the effective incorporation of nitrogen in the TiO₂ lattice is also examined and compared in representative samples.