First-principles study of arsenic impurity clusters in molecular beam epitaxy (MBE) grown HgCdTe

The understanding of the microstructures of the arsenic tetramer , dimer , and singlet of HgCdTe is important to explain the high electrical compensation of molecular beam epitaxy (MBE) samples and the conversion to p-type behavior. The stable configurations were obtained from the first-principles calculations for the arsenic cluster defects [ (n=1, 2, and 4)] in as-grown HgCdTe. According to the defect formation energies calculated under Te-rich conditions, the most probable configurations of , , and have been established. For the optimized and the energy is favorable to combine in a nearest neighboring mercury vacancy , and the corresponding configurations can be used to explain the self-compensated n-type characteristics in as-grown materials. is likely to be more abundant than in as-grown materials, but arsenic atoms are more strongly bounded in than in , thus more substantial activation energy is needed for than that for . The atomic relaxations as well as the structural stability of the arsenic defects have also been investigated.     

Anomalous thermostat and intraband discrete breathers

We investigate the dynamics of a macroscopic system which consists of an anharmonic subsystem embedded in an arbitrary harmonic lattice, including quenched disorder. The coupling between both parts is bilinear. Elimination of the harmonic degrees of freedom leads to a nonlinear Langevin equation with memory kernels and noise term for the anharmonic coordinates . For zero temperature, i.e. for , we prove that the support of the Fourier transform of and of the time averaged velocity-velocity correlation functions of the anharmonic system cannot overlap. As a consequence, the asymptotic solutions can be constant, periodic, quasiperiodic or almost periodic, and possibly weakly chaotic. For a sinusoidal trajectory with frequency we find that the energy E_T transferred to the harmonic system up to time T is proportional to T^α. If equals one of the phonon frequencies ω_ν, it is α=2. We prove that there is a zero measure set L such that for in its full measure complement R?L, it is α=0, i.e. there is no energy dissipation. Under certain conditions L contains a subset L^′ such that for the dissipation rate is nonzero and may be subdissipative (0≤α<1) or superdissipative (1<α≤2), compared to ordinary dissipation (α=1). Consequently, the harmonic bath does act as an anomalous thermostat, in variance with the common belief that elimination of a macroscopically large number of degrees of freedom always generates dissipation, forcing convergence to equilibrium. Intraband discrete breathers are such solutions which do not relax. We prove for arbitrary anharmonicity and small but finite coupling that intraband discrete breathers with frequency exist for all in a Cantor set C(k) of finite Lebesgue measure. This is achieved by estimating the contribution of small denominators appearing for , related to . For the small denominators do not lead to divergencies such that is a smooth and bounded function in t.     

On short and semi-short representations for four-dimensional superconformal symmetry

Possible short and semi-short representations for and superconformal symmetry in four dimensions are discussed. For the well known short supermultiplets whose lowest dimension conformal primary operators correspond to -BPS or -BPS states and are scalar fields belonging to the SU(4) R-symmetry representations [0,p,0] and [q,p,q] and having scale dimension Δ=p and Δ=2q+p, respectively, are recovered. The representation content of semi-short multiplets, which arise at the unitarity threshold for long multiplets, is discussed. It is shown how, at the unitarity threshold, a long multiplet can be decomposed into four semi-short multiplets. If the conformal primary state is spinless one of these becomes a short multiplet. For a -BPS multiplet need not have a protected dimension unless the primary state belongs to a [1,p,1] representation.     

Time-resolved spectroscopy of Al, Ti, and Mo X pinch radiation using an X-ray streak camera

Time-resolved spectroscopic measurements of the radiation emitted from Al, Ti, and Mo X pinches have been made with time resolution. The radiation is emitted from micropinch plasmas with sizes of order in times in the 10- range. Spectra implied that dense, plasmas were produced, such as a lifetime, 1.5- electron temperature and near solid-density Ti plasma. The experimental systems and analysis methods are described in detail, including line ratio calculations for μm-scale Ti and Al plasmas with ion densities of 10¹⁹-10²⁴ cm⁻³ and electron temperatures.     

MRCI studies on the electronic structure of AlN and AlN, and the electron affinity of AlN

Using multireference configuration-interaction methods and double to triple-zeta basis sets with semidiffuse and polarization functions, potential energies and spectroscopic constants for low-lying doublet, and quartet states of AlN⁻ were calculated. has R_e=3.280 bohr and . lies 0.17 eV above the ground state. Using an estimated electron affinity of 2.1 eV for AlN, four states of AlN⁻ are found to be stable, namely , , , and . Comparisons with the isovalent anions BN⁻ (three stable states) and AlP⁻ (seven stable states) are made. Photo-detachment of an electron from the state of AlN⁻ can lead to an accurate determination of the energy difference between the two close-lying lowest states of AlN, and , predicted here to be 0.09 eV apart.     

Measurement of the 4d-photoionization cross section via two-photon and two-step excitation in sodium

We present a comparison of the photoionization cross sections of the 4d excited levels of sodium by using the two-step resonant laser excitation and by two-photon non-resonant excitation from the ground state. Dye lasers, pumped with a Nd: YAG laser, have been used in conjunction with a thermionic diode ion detector to measure cross sections and the atomic densities as a function of laser energy. By applying the saturation technique, the measured values of the cross sections and atomic densities for the 4d level by two-photon excitation are 12.2(2.4) Mb and , respectively. Where as in the case of two-step excitation, the cross section and number density for the 4d level via 3p level and for the 4d levels via 3p level are determined as 9.6(1.9) Mb, and 12.8(2.5) Mb, , respectively.     

The luminescence of Sm in alkaline earth borophosphates

The temperature-dependent luminescence of Sm²⁺ ions in MBPO₅ was studied. At low temperature, Sm²⁺ in this series shows 4f⁶→4f⁶ luminescence with only a single emission line observed for the transition, revealing that only one crystallographic cationic site is available for Sm²⁺ in all the hosts. With increasing temperature, the emission intensity of the transition increases whereas that of the transitions decreases. The transitions of Sm²⁺ were observed in BaBPO₅ and its intensity increases with increasing temperature. At , a broad band of the 4f⁵5d→4f⁶ luminescent transition of Sm²⁺ in SrBPO₅ and BaBPO₅ with maximum at appears due to the thermal population. The lifetime of the transition was recorded at different temperatures, showing a single exponential decay for Sm²⁺ in SrBPO₅ and BaBPO₅ but a non-single-exponential decay in CaBPO₅.     

Realization and field emission of CdSe nano-tetrapods with different arm lengths

The arms of CdSe nano-tetrapods can be greatly elongated with the core diameters and arm width unchanged by multiple injections. Room-temperature absorption and photoluminescence (PL) spectra of tetrapods with different arm lengths show that these tetrapods have almost the same core size, which is consistent with the high resolution TEM results. Field emission characteristics show that the onset field required drawing a current density of from CdSe nano-tetrapods with different arm lengths are , , and , respectively, and the field enhancement factors are determined to be about 218, 554, and 946, respectively. Results show that the longer is the arm of the tetrapods, the lower the turn-on field and the higher the field enhancement factor.