分子晶体中的几种分子间相互作用

描述了ＨＥＫ－ＤＤＱ，［Ｃｏ（Ｃ_５Ｈ_５）_２］［Ｎｉ（ｄｍｉｔ）_２］，ＢＢＢＴ－ＤＴＴ三个晶体结构中的π…π；Ｓ…Ｓ；Ｂｒ…Ｂｒ分子间相互作用，讨论了分子晶体中的分子间相互作用的材料化学意义。     

DNA双链断裂的组成与自由基清除效能的关系

ＤＮＡ双链断裂（ＤＳＢ）是重要的辐射生物学效应之一 ,它是导致细胞死亡和变异的主要因素［１,２］．大量研究表明 ,ＤＳＢ由αＤＳＢ和 βＤＳＢ两部分组成 ,分别为电离辐射能量沉积的单击作用 (包括ＬＭＤＳ机制和单自由基传递机制 )和双击作用所致［３ -５］．但对不同的生物体系 ,由于靶体积大小等不一 ,α、β有不同的值．从根本上讲 ,α、β与电离辐射的径迹如粒子的种类、ＬＥＴ等有关 ,α在中等ＬＥＴ时最大 ,而 β则在低ＬＥＴ辐射时占优势［６］．研究α、β 与生物体系之间的关系 ,将有助于加深人们对电离辐射物理化学效应的…     

双（1,2—丙二胺）合铜的TCNQ盐的合成与光谱研究

合成了导电性ＴＣＮＱ盐Ｃｕ（ｐｎ）２（ＴＣＮＱ）ｎ（ｎ＝２和３，ｐｎ＝１，２－丙二胺，ＴＣＮＱ＝７，７，８，８－四氰基对苯二醌二甲烷）。红外光谱、电子光谱和Ｘ－光电子能谱研究表明ＴＣＮＱ盐中存在ＴＣＮＱ°和ＴＣＮＱ－，ＴＣＮＱ°与ＴＣＮＱ－之间发生了部分电子转移，致使铜呈混合价态。它们的粉末室温电导率为１．１×１０－５～２．４×１０－６ｏｈｍ－１ｃｍ－１。     

含间苯基聚醚酮醚酮酮的合成和性能研究

自英国ＩＣＩ公司开发聚醚醚酮（ＰＥＥＫ）并于八十年代初期商品化以来［１］,聚芳醚酮作为一类新型结构的高性能特种工程塑料得到了惊人的发展,不同结构的聚芳醚酮相继出现．Ｊａｎｓｏｎ［２］等以对苯二甲酰氯（ＴＰＣ）和４,４′ 二苯氧基二苯酮（ＤＰＢＰ）为单...     

四硫代富瓦烯/四氰基对二次甲基苯醌单分子膜气-液界面性质及LB膜组装体的紫外可见光谱

几种电子给体（四硫代富瓦烯，ＴＴＦ）、电子受体（长链四氰基对二次甲基苯醌；Ｃ１８ ＴＣＮＱ）及它们相应的 １：１摩尔比复合物的气－液界面分子行为表明：不带长链的 ＴＴＣ１－ ＴＴＦ、ＢＥＤＴ－ＴＴＦ的成膜性在其与Ｃ１８ＴＣＮＱ形成复合物之后均得到显著改善。Ｃ１６ＴＴＦ、Ｃ１８ ＴＣＮＱ及两者不同结构ＬＢ膜组装体的紫外可见光谱研究发现：Ｃ１８ＴＣＮＱ在其单独的Ｙ－型 膜中摩尔吸光系数是７．５×１０３，而在交替组装体中其摩尔吸光系数是１．３×１０３，给受体之间 的相互作用导致跃迁偶极矩减小，从而引起吸光系数减小４倍多。     

现场表面拉曼光谱研究Ni-P合金电沉积机理

由于Ｎｉ Ｐ合金具有许多优越的物理和化学性能 ,如高的耐蚀性［１］、好的电催化特性［２,３］以及好的非磁特性［４,５］,人们对这种合金的沉积方法进行了大量的研究．磷是一种不能从水溶液中单独进行电沉积的元素 ,但它很容易和铁组元素共沉积．为了解释这一现象 ,Ｂｒｅｎｎｅｒ曾提出直接机理［６］．认为镀液中磷的含氧酸 (根 )直接在电极上还原成合金中的磷．然而 ,磷不能用电化学方法以纯态沉积出来,所以直接机理没有被广泛接受．第二种是由Ｆｅｄｏｔ′ｅｖ等提出的间接机理［７］,认为磷的含氧酸（根）首先还原成磷化氢（ＰＨ…     

4-[2-(4-N,N-二甲基苯胺基)乙烯基]吡啶氧化物的电化学行为

半菁染料是人们制造ＬＢ膜的材料之一．近年来,为得到电导率较高的薄膜,电荷转移络合物的ＬＢ膜受到重视［１］．实验证明,有机材料的ＬＢ膜经化学修饰或改性以后,电导率大大增加．化学工作者常将有机染料分子用来修饰电极,在光电化学、电催化等方面有较好的效果,因而,受到人们极大的关注．化学工作者已成功地制备出许多染料化学修饰电极,研究膜修饰电极的电化学行为［２,３］,而用循环伏安法和光谱技术对有机染料的电化学行为研究得较少［４,５］．本文对４ ［２ (４ Ｎ,Ｎ 二甲基苯胺基 )乙烯基］吡啶氧化物这个新改性的半菁化…     

乙烯系自由基聚合阻聚效应（ⅩⅧ）：哌啶氮氧自由基氨基硫…

本文研究了３种１－（芳酰基）－４［４＇－（２，２，６，６－四甲基哌啶）－１－氧自由基］氨基硫脲化合物（ＡＴＳＣＰＯ）分别同通用阻聚剂（ＣＩＨ），如对苯二酚（ＨＱ），苯醌（ＢＱ），吩噻嗪（ＰＴ）及二乙羟胺（ＤＥＨＡ）组成的混合阻聚剂对ＡＩＢＮ引发的ＭＭＡ自由基聚合的影响，研究结果表明：当［ＡＴＳＣＰＰ］／ＣＩＨ＝５：１时，除ＡＴＳＣＰＯ－ＢＱ外，其余阻聚效果均较ＡＴＳＣＰＯ和ＣＩＨ单独用作阻聚剂时高     

酞菁铜与四氰代二甲基苯醌电荷转移反应的测定

用红外光谱、紫外可见光谱、循环伏安法等研究了三．（２，４－二特戊基苯氧基）－８－喹淋氧基酞菁铜（简称酞菁铜）和２－十八烷基－７，７，８，８－四氰二甲基苯醌（简称Ｃ１８－ＴＣＮＱ）在Ｌａｎｇ－ｍｕｉｒ－Ｂｌｏｄｇｅｔｔ（ＬＢ）膜中的电荷转移。实验结果表明，在交替和混合ＬＢ膜中，酞菁铜和Ｃ１８－ＴＣ－ＮＱ分子之间均发生了电荷转移，其中酞菁铜为给体分子，ＴＣＮＱ为受体分子。在混合ＬＢ膜中，电荷转移程度较大。电导率测量表明荷移反应使ＬＢ膜的电导率较纯酞菁铜ＬＢ膜提高了３个数量级。     

聚苯胺-TCNQ复合薄膜的微观结构与电学特性

聚苯胺 (ＰＡＮＩ)作为高聚物材料 ,具有稳定性好 ,易于合成等优点．它在化学传感器、显示器、光化学电池等光电器件上有着许多潜在的应用前景．目前导电聚苯胺材料的合成、薄膜的制备与表征正在受到人们的重视．由于聚苯胺很难溶于一般的有机溶剂 ,用化学方法通过聚合物溶液用旋涂或自组装的方法成膜具有很大的局限性 ,特别是不易得到实用化的薄膜产物．而用真空蒸发沉积方法制备聚苯胺薄膜却有成膜质量高、易于控制 ,能很好与电子及微电子加工工艺相接轨等优点［１ -３］．国外已有一些关于真空蒸发沉积聚苯胺薄膜的研究报导［２ -５］,但…     

两种表征金属有机双层膜络合和金属薄膜氧化反应动力学的方法

建立了两种新的薄膜反应动力学表征方法, 即透射光谱法和方块电阻法, 以克服传统动力学表征手段在薄膜体系氧化与络合反应过程中应用的局限性. 以透射光谱为表征手段, 得到了Ag/TCNQ(四氰基对醌二甲烷)金属有机双层薄膜的络合反应动力学曲线; 以方块电阻为表征手段, 得到了Cu薄膜的氧化反应动力学过程.     

Al-induced crystallization of amorphous ge and formation of fractal ge micro-/nanoclusters

Results on Al-induced crystallization of amorphous Ge (a-Ge) deposited by vacuum thermal evaporation techniques under thermal annealing in N(2) atmosphere are presented in detail. The a-Ge crystallization and fractal Ge pattern formation on the free surface of annealed Al/Ge bilayer films deposited on single-crystal Si (100) substrates were investigated by using scanning electron microscopy (SEM), X-ray diffraction (XRD), atomic force microscopy (AFM), energy dispersive X-ray spectrometry (EDS), and Raman spectra. It is found that the temperature field effects play an extremely crucial role in a-Ge crystallization and fractal Ge formation process. The open branched structure of fractal Ge clusters in Al/Ge bilayer films was effectively prepared by Al-induced crystallization when they were annealed at 400 °C for 60 min. These films with fractal Ge clusters exhibit charming noninteger dimensional nanostructures, which differ from those of conventional integer dimensional materials such as one-dimensional nanowires/nanorods, nanotubes, nanobelts/nanoribbons, two-dimensional heterojunctions, thin films, and zero-dimensional nanoparticles. The SEM image shows that a big Al grain was found located near the center of a fractal Ge cluster after the films were annealed at 400 and 500 °C for 60 min. This suggests that the grain boundaries of polycrystalline Al films are the initial nucleation sites of a-Ge. It also validates the preferred nucleation theory of a-Ge at triple-point grain boundaries of polycrystalline Al at the interface. This discovery may be explained by the metal-induced nucleation (MIN) mechanism.     

电荷转移配合物薄膜制备方法和结构表征的研究进展

回顾了与Langmuir-Blodgett(LB)技术有关的电荷转移配合物薄膜的各类制备方法、结构表征结果,并比较了制备方法对薄膜结构的影响.例如,将LB膜C18H37TCNQ(电子受体)插入到电子给体3,3’,5,5’-tetramethylbenzidine(四甲基联苯胺, TMB)的石油醚溶液中进行掺杂,制备了TMB•C18H37TCNQ电荷转移配合物薄膜.在这种薄膜中,给体和受体以面对面的方式堆积,两者的环平面与基片平面接近垂直.而采用硬脂酸和C18H37TCNQ的混合LB膜通过类似的掺杂路线制备的TMB•C18H37TCNQ薄膜的结构发生了一些变化,例如其长的烃链C18H37更加垂直于基片平面.通过比较以前的各种实验结果可以得出以下结论:电荷转移配合物的结构可以通过制备方法得到控制.     

Investigating aluminum thin films properties by stochastic analysis

In this article, we investigate about stochastic properties of a thin film such as aluminum thin film that is formed by thermal evaporation in high vacuum. So we prepare thin films with different thicknesses on glass surfaces in high vacuum chamber with 10^?6 torr. Then, we use Atomic Force Microscopy (AFM), for determining the height fluctuations of aluminum thin films in different growth stages and use an inverse method that utilizes data from AFM to construct a simple equation that governs the stochastic process and a relation between stochastic parameters such as roughness, correlation and Markov length, drift, and diffusion coefficients during the growth process. Also we show that aluminum thin films, during growth by evaporating in high vacuum chamber, have a mono fractal behavior in small distances(little than 100 nm) on the surfaces. Copyright © 2008 John Wiley & Sons, Ltd.     

Electrochemical and spectroelectrochemical behavior of the TCNQ(0/)(-) couple on a glassy carbon electrode. Layer-by-layer nucleation and growth

On the basis of the electrochemical results obtained for thin films of 7,7,8,8- tetracyanoquinodimethane (TCNQ) on a glassy carbon electrode, the reduction and oxidation of the [TCNQ](0/)(-) couple in KCl aqueous media occurs via a mechanism involving layer-by-layer nucleation and growth. In situ recorded UV-visible spectroelectrochemical data allow two different crystal structures for the oxidized form of TCNQ to be discriminated.     

Ag(TCNQ)准一维微米结构的制备及表征

利用溶液化学反应法制备了准一维结构的金属有机配合物Ag(TCNQ). X射线衍射(XRD)表明，所制备的Ag(TCNQ)为晶态结构;扫描电子显微镜(SEM)的观察证明，Ag(TCNQ)为准一维的微米管或线；Raman 测试结果表明，单根的Ag(TCNQ)形成时,Ag原子与TCNQ分子之间发生了电荷转移.对样品的制备工艺,即 Ag膜厚度和浸入溶液的反应时间对生成Ag(TCNQ)晶体形貌的影响进行了研究.结果表明，Ag膜越薄，生长出的晶体越稀疏;Ag膜与TCNQ乙腈溶液的反应时间影响其形貌的变化.反应历经三个阶段,晶体形成和长大阶段、反应完全阶段及溶解阶段.     

Tuning the electrocrystallization parameters of semiconducting Co[TCNQ]2-based materials to yield either single nanowires or crystalline thin films

Electrocrystallization of single nanowires and/or crystalline thin films of the semiconducting and magnetic Co[TCNQ]2(H2O)2 (TCNQ=tetracyanoquinodimethane) charge-transfer complex onto glassy carbon, indium tin oxide, or metallic electrodes occurs when TCNQ is reduced in acetonitrile (0.1 M [NBu4][ClO4]) in the presence of hydrated cobalt(II) salts. The morphology of the deposited solid is potential dependent. Other factors influencing the electrocrystallization process include deposition time, concentration, and identity of the Co2+(MeCN) counteranion. Mechanistic details have been elucidated by use of cyclic voltammetry, chronoamperometry, electrochemical quartz crystal microbalance, and galvanostatic methods together with spectroscopic and microscopic techniques. The results provide direct evidence that electrocrystallization takes place through two distinctly different, potential-dependent mechanisms, with progressive nucleation and 3-D growth being controlled by the generation of [TCNQ]*- at the electrode and the diffusion of Co2+(MeCN) from the bulk solution. Images obtained by scanning electron microscopy reveal that electrocrystallization of Co[TCNQ]2(H2O)2 at potentials in the range of 0.1-0 V vs Ag/AgCl, corresponding to the [TCNQ]0/*- diffusion-controlled regime, gives rise to arrays of well-separated, needle-shaped nanowires via the overall reaction 2[TCNQ]*-(MeCN)+Co2+(MeCN)+2H2O right harpoon over left harpoon {Co[TCNQ]2(H2O)2}(s). In this potential region, nucleation and growth occur at randomly separated defect sites on the electrode surface. In contrast, at more negative potentials, a compact film of densely packed, uniformly oriented, hexagonal-shaped nanorods is formed. This is achieved at a substantially increased number of nucleation sites created by direct reduction of a thin film of what is proposed to be cobalt-stabilized {(Co2+)([TCNQ2]*-)2} dimeric anion. Despite the potential-dependent morphology of the electrocrystallized Co[TCNQ]2(H2O)2 and the markedly different nucleation-growth mechanisms, IR, Raman, elemental, and thermogravimetric analyses, together with X-ray diffraction, all confirmed the formation of a highly pure and crystalline phase of Co[TCNQ]2(H2O)2 on the electrode surface. Thus, differences in the electrodeposited material are confined to morphology and not to phase or composition differences. This study highlights the importance of the electrocrystallization approach in constructing and precisely controlling the morphology and stoichiometry of Co[TCNQ]2-based materials.     

Probing into interesting effects of fractal Ge nanoclusters induced by Pd nanoparticles

Metal/semiconductor thin films are a class of unique materials that have widespread technological applications, particularly in the field of microelectronic devices. New strategies of fractal assessment for Pd/Ge bilayer films formed at various annealing temperatures are of fundamental importance in the development of micro/nanodevices. Herein, Pd/Ge bilayer films with interesting fractal nanoclusters were successfully prepared by evaporation techniques. Temperature-dependent properties of resistance and fractal dimensions in Pd/Ge bilayer films with self-similar Ge fractal nanoclusters were investigated in detail. Experimental results indicated that the fractal crystallization behavior and film resistance in Pd/Ge bilayer films are influenced significantly by annealing temperatures and fractal dimensions. The measurements of film resistance confirmed that there is an evident relationship between the film resistance and the fractal dimension. These phenomena were reasonably explained by the random tunneling junction network mechanism.     

On the formation of calcium carbonate thin films under Langmuir monolayers of stearic acid

In this publication, we describe the growth of thin films of calcium carbonate beneath Langmuir monolayers of stearic acid. The size and shape of the crystalline structures were systematically studied by means of different microscopic techniques including Brewster angle microscopy, atomic force microscopy and scanning electron microscopy. In a series of experiments, we explored the calcium carbonate crystallization process for different lipid monolayers and subphases. The observed phenomena support a crystallization process which is induced by a thin, film-like structure of a precursor phase. The basic processes of crystal and aggregate formation can be represented by a simple model which is based on electrostatic interactions between the surfactant film and the inorganic calcium carbonate structures.     

AFM研究PCL薄膜的结晶形态

利用原子力显微镜 (AFM)详细研究了聚己内酯 (PCL)超薄膜及其在特殊限制环境下的结晶形态 .AFM的观察表明 ,PCL在石英基板上的结晶形态呈现典型的球晶及比较少见的树枝状晶两种形态 .认为主要是超薄膜结晶过程中由于几何受限及基板吸附导致分子链扩散移动速度大大降低 ,由此形成的扩散控制结晶过程从而导致最终形成树枝状的分形结构 .将聚合物限制在间距为 10 μm的凹槽内 ,发现PCL的结晶有比较规整的排列 ,而且沿着凹槽的方向结晶排列取向优先 .当在凹槽两侧铝条上施加强电场后 ,发现在静电场作用下 ,PCL的结晶取向生长方向发生改变 ,沿着电场方向排列生长的结晶增多