共查询到19条相似文献,搜索用时 93 毫秒
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掺杂稀土锰氧化物的巨磁电阻效应 总被引:3,自引:0,他引:3
介绍了掺杂稀土锰氧化物的巨磁电阻效应研究概况和最新进展,在综合目前实验和理论研究结果的基础上,对在掺杂稀土锰氧化物材料中引起巨磁电阻效应的物理机制进行了探讨,对这一材料的应用前景和需要做的工作进行了讨论。 相似文献
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Based on the analysis and the discussion of the influence of thermal ionization energy and various scatterings on magnetoresistance(MR) of p-type diamond films,a revised model of valence band split-off over temperature is put forward,and a corresponding calculation formula is given for the MR of p-type diamond films (Corbino discs).It is shown that the theoretical calculation that the MR of diamond films changes with temperature is consistent with the experiment.The influence of Fermi energy level on MR of diamond films is discussed.Additionally,the thermal effect mechanism of MR in p-type diamond films is also explored. 相似文献
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Based on the analysis and the discussion of the influence of thermal ionization energy and various scatterings on magnetoresistance(MR) of p-type diamond films, a revised model of valence band split-off over temperature is put forward, and a corresponding calculation formula is given for the MR of p-type diamond films (Corbino discs). It is shown that the theoretical calculation that the MR of diamond films changes with temperature is consistent with the experiment. The influence of Fermi energy level on MR of diamond films is discussed. Additionally, the thermal effect mechanism of MR in p-type diamond films is also explored. 相似文献
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The effect of lattice dimerization on the magnetoresistance (MR) in organic spin valves is investigated based on the Su-Schrieffer-Heeger (SSH) model and the Green's function method. By comparing with the results for a uniform chain, we find that the dimerization of the molecular chain modifies the monotonic dependence of the MR on the bias to an oscillatory one. A sign inversion of the MR is observed when the amplitude of the dimerization is adjusted. The results also show that at a low bias, the MR through a dimerized chain decreases with the increasing bias as well as the increasing chain length, which is consistent with the experimental reports. A further understanding can be achieved by analyzing the electronic states and the spin-dependent transmission spectrum with the parallel and antiparallel magnetization orientations of the two ferromagnetic electrodes. 相似文献
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Darshan C Kundaliya Reeta Vij AA Tulapurkar U Vaidya R Pinto RG Kulkarni 《Pramana》2002,58(5-6):1041-1044
Electrical resistance (R) measurements of a bulk La0.33Nd0.33Ca0.33MnO3 perovskite in magnetic fields up to 40 kOe have revealed anomalous temperature hysteretic effects both in 0 Oe and 20 kOe
magnetic fields. The sharp peak observed in the R vs. T plot indicates the occurrence of metal-to-insulator (M-I) transition at a temperature of T
MI=110 K and 140 K, for cooling and warming paths, respectively. An applied magnetic field of 20 kOe reduces the resistance
and shifts T
MI to 160 K and 185 K for cooling and warming, respectively. We have observed a much higher resistance in the cooling path than
in the warming path leading to the hysteretic resistance ratio (R
cool/R
warm) of 200 at 110 K and 1.8 at 160 K for 0 Oe and 20 kOe, respectively. Record values of colossal magnetoresistance (CMR) have
been achieved. The CMR value reaches nearly 99% in the temperature ranges of 90 K to 140 K and 90 K to 170 K for 20 kOe and
40 kOe magnetic fields in the cooling mode, respectively. The observed unusual behavior is attributed to the co-existence
of La-rich and Nd-rich domains assumed to be distributed randomly in the compound. 相似文献
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Dirac semimetal is a class of materials that host Dirac fermions as emergent quasi-particles.Dirac cone-type band structure can bring interesting properties such as quantum linear magnetoresistance and large mobility in the materials.In this paper,we report the synthesis of high quality single crystals of BaMnBi_2 and investigate the transport properties of the samples.BaMnBi_2 is a metal with an antiferromagnetic transition at T_N = 288 K.The temperature dependence of magnetization displays different behavior from CaMnBi_2 and SrMnBi_2,which suggests the possible different magnetic structure of BaMnBi_2.The Hall data reveals electron-type carriers and a mobility μ(5K)= 1500 cm~2/V·s.Angle-dependent magnetoresistance reveals the quasi-two-dimensional(2D) Fermi surface in BaMnBi_2- A crossover from semiclassical MR~H~2dependence in low field to MR~H dependence in high field,which is attributed to the quantum limit of Dirac fermions,has been observed in magnetoresistance.Our results indicate the existence of Dirac fermions in BaMnBi_2. 相似文献
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ZHANG Xin ZHANG XiaoZhong & WAN CaiHua Key Laboratory of Advanced Materials 《中国科学:物理学 力学 天文学(英文版)》2011,(7)
Three types of a-C:Co/Si samples were fabricated using the pulsed laser deposition:Co2-C98/Si with Co dispersed in the a-C film,Co2-C98/Si with Co segregated at the interface,and a-C/Co/Si with Co continuously distributed at the a-C/Si interface.Both types of Co2-C98/Si samples had the positive bias-voltage-dependent magnetoresistance(MR) at 300 K,and all MRs had saturated behavior.The study on the electrotransport properties indicated that the MR appeared in the diffusion current region,and the mechanism o... 相似文献
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The effect of spin-orbit coupling on magnetoresistance in nonmagnetic organic semiconductors 下载免费PDF全文
We investigated the effect of spin-orbit coupling on magnetoresistance in nonmagnetic organic semiconductors.A Lorentz-type magnetoresistance is obtained from spin-orbit coupling-dependent spin precession under the condition of a space-charge-limited current.The magnetoresistance depends on the initial spin orientation of the electron with respect to the hole in electron-hole pairs,and the increasing spin-orbit coupling slows down the change in magnetoresistance with magnetic field.The field dependence,the sign and the saturation value of the magnetoresistance are composite effects of recombination and dissociation rate constants of singlet and triplet electron-hole pairs.The simulated magnetoresistance shows good consistency with the experimental results. 相似文献