Magnetism in nanometer-thick TiOx/Co/TiOx/TiN/Si multilayered structures

Most studies on Co-doped TiO₂ system were focused on thin films grown by MBE-based methods. In this work we report the ferromagnetism of nanometer-thick-layered TiO₂/Co/TiO₂/TiN film grown on Si substrate by conventional magnetron sputtering. For the growth of TiO₂ on silicon, a non-oxide thermally stable material, TiN, was introduced to prevent Ti penetration into the Si substrate. Structural, magnetic, and transport measurements respectively by Raman, SQUID and Hall effect show that our samples are n-type semiconductors and exchange bias effect due to exchange coupling between Co and interfacial CoO. For the rapid vacuum annealed specimen, we found an enhanced loss and a Perminvar-type constricted hysteresis loop, which attributed to pinning of domain walls due to an induced anisotropy by the pair ordering in the metallic alloy of Co-Ti-Si.     

Spin-glass-like behavior in ZnxCryAlzSe4

The magnetic and electrical properties of the Al-doped polycrystalline spinels Zn_xCr_yAl_zSe₄ (0.13≤z≤0.55) with the antiferromagnetic (AFM) order and semiconducting behavior were investigated. A complex antiferromagnetic structure below a Néel temperature T_N≈23 K for the samples with z up to 0.4 contrasting with the strong ferromagnetic (FM) interactions evidenced by a large positive Curie-Weiss temperature θ_CW decreasing from 62.2 K for z=0.13 to 37.5 K for z=0.55 was observed. Detailed investigations revealed a divergence between the zero-field-cooling (ZFC) and field-cooling (FC) susceptibilities at temperature less than T_N suggesting bond frustration due to competing ferromagnetic and antiferromagnetic exchange interactions in the compositional range 0.13≤z≤0.4. Meanwhile, for z=0.55 a spin-glass-like behavior of cluster type with randomly oriented magnetic moments is observed as the ZFC-FC splitting goes up to the freezing temperature T_f=11.5 K and the critical fields connected both with a transformation of the antiferromagnetic spin spiral via conical magnetic structure into ferromagnetic phase disappear.     

Context effects in recognizing syllable-final /z/ and /s/ in different phrasal positions

An examination of the effect of phrase-final lengthening on the temporal correlates of voicing in syllable-final /s/ and /z/ was conducted. Discriminant analyses revealed that a combination of vowel duration, frication duration, and the duration of simultaneous voicing and frication was quite successful in determining voicing independently of phrase-final lengthening. Two perceptual experiments revealed that human listeners' recognition of the segments does benefit from hearing the syllables in sentential context as opposed to when they are excised from context and presented in isolation. The benefit was greatest for /s/ in phrase-final position and /z/ in phrase-internal position. This suggests that the presence of sentential context allows listeners to factor out the influence of phrase-final lengthening on vowel duration and to more accurately interpret this cue to voicing of the final fricative. These findings extend previous results on rate-dependent processing of overall speaking rate to the processing of local speaking rate. By doing so, they provide further evidence of the importance of extended phonetic context in speech recognition.     

Tunneling magnetoresistance in exchange-biased CoFeB/AlOx/Co/IrMn junctions

A series of exchange-biased magnetic tunneling junctions (MTJs) were made in an in-plane deposition field (h) = 500 Oe. The deposition sequence was Si(1 0 0)/Ta(30 Å)/CoFeB(75 Å)/AlO_x(d Å)/Co(75 Å)/IrMn(90 Å)/Ta(100 Å), where d was varied from 12 Å to 30 Å. The MTJ was formed by the cross-strip method with a junction area of 0.0225 mm². The tunneling magnetoresistance (ΔR/R) of each MTJ was measured. The high-resolution cross-sectional transmission electron microscopic (HR X-TEM) image shows the very smooth interface and clear microstructure. X-ray diffraction (XRD) demonstrates that the IrMn layer of the MTJ exhibits a (1 1 1) texture. From the results (ΔR/R) increases from 17% to 50%, as d increases from 12 Å to 30 Å. The tunneling resistance (R_o) of these junctions ranges from 150 Ω to 250 Ω. The exchange-biasing field (H_ex) of the MTJ is 50-95 Oe. Finally, the saturation resistance (R_s) was measured as a function of the angle (α) of rotation, where α is the angle between h and the in-plane saturation field (H_s) = 1.1 kOe. The following figure presents the dependence of R_s on α, instead of originally expected independence, the curve actually varies with a period of π.     

Variability in production of the vowels /i/ and /a/

A hypothesis on the nature of articulatory targets for the vowels /i/ and /a/ is proposed, based on acoustic considerations and vowel articulations. The conjecture is that positioning of points on the tongue surface in a repetition experiment should be most accurate in the direction perpendicular to the vocal-tract midline, at the acoustically critical point of maximal constriction for each vowel. The hypothesis was tested by: examining x-ray microbeam data for three speakers, conducting a partial acoustical analysis, and performing a modeling study. Distributions were plotted of the midsagittal locations of three tongue points at the time of maximal excursion toward the vowel target for numbers of examples of the vowels, embedded in a variety of phonetic contexts. More variation was found along a direction parallel to the vocal tract midline than perpendicular to the midline, supporting the hypothesis. Statistics on formant values for one subject have been calculated, and pairwise regressions of displacement and formant data have been run. An articulatory synthesizer [Rubin et al., J. Acoust. Soc. Am. 70, 321-328 (1981)] has been manipulated through displacements similar to the subject's articulatory variation. Although articulatory synthesis showed systematic relationships between articulatory relationships and formant frequencies, there were no significant correlations between the subject's measured articulatory displacements and his formant data. These additional results raise questions about the methodology and point to the need for additional work for an adequate test of the hypothesis.     

Velopharyngeal aerodynamics of /m/ and /p/ in tracheoesophageal speech

The purpose of this study was to compare oral pressure (P_o), nasal airflow (V_n), and velopharyngeal (VP) orifice area estimates from 12 tracheoesophageal (TE) and 12 laryngeal speakers as they produced /p/ and /m/ in syllable series. The findings were as follows: (1) TE speakers produced greater P_o than the laryngeal speakers; (2) for /p/, TE speakers generated V_n, and VP orifice area estimates comparable with, or less than, the laryngeal speakers; and (3) for /m/, TE speakers had V_n and VP orifice area estimates greater than the laryngeal speakers. The elevated P_o could be the result of several factors such as high source driving pressures and vocal tract volume changes postlaryngectomy. Attempts at more precise articulation, and subsequently less coarticulation, by the TE speakers may explain the V_n and VP orifice area estimates for /p/ and /m/. TE speakers may be limiting the oral-nasal cavity coupling for /p/ (smaller VP gap, less V_n) in an attempt to produce a very precise oral /p/. For /m/, TE speakers may be attempting to overtly mark the consonant as a nasal (greater V_n, larger VP gap). Further studies are needed to confirm/refute the explanations postulated here regarding the VP aerodynamic differences that were identified.     

Photovoltaic Effect in Pb1−xMnxTe

Photovoltaic effect on p?n junctions made with ternary compounds Pb_1?xMn_xTe has been measured. From these measurements the energy gap of the alloys was determined as a function of temperature.     

Optical measurement of KB/KS divergence in nematics

A direct optical analysis of the divergence of the elastic constant ratio K_B/K_S in a nematic material near the T_AN transition temperature is presented. The results are in excellent agreement with what obtained from more complicated techniques. The method used exhibits a large number of advantage with respect to the conventional ones.     

Fine-grained variation in caregivers' /s/ predicts their infants' /s/ category

Within the debate on the mechanisms underlying infants' perceptual acquisition, one hypothesis proposes that infants' perception is directly affected by the acoustic implementation of sound categories in the speech they hear. In consonance with this view, the present study shows that individual variation in fine-grained, subphonemic aspects of the acoustic realization of /s/ in caregivers' speech predicts infants' discrimination of this sound from the highly similar /∫/, suggesting that learning based on acoustic cue distributions may indeed drive natural phonological acquisition.     

Electrical peculiarities in Al/Si/Ge/…/Ge/Si and Al/SiGe/Si structures

The current–voltage (I–V) and capacitance–voltage (C–V) behaviour of different Si/Ge multilayers and SiGe single layers prepared on p-type Si substrates by magnetron sputtering and annealing, has been studied in the temperature range of 80–320 K by using Al Schottky contacts as test structures. Although a significant influence of the microstructure of the Si/Ge multilayers and SiGe layers was obtained on the electrical behaviour of the structures, the structures exhibited similar specific features.     

Electronegativity and tetragonal distortions in AIIBIVCV2 semiconductors

Empirical correlations are established between the tetragonal distortions 2-c/a and dielectrically defined electronegativities based on polarizabilities of AⁿB^8-n compounds. Optical data, including the birefringence parameter δn = n_e - n_o, are summarized. No simple relation is found to exist between δn and the principal optical gaps and tetragonal distortions of seven chalcopyrite compounds.     

Coherence effects in S/I/N/I/FS tunnel junctions

The dc Josephson effect in superconductor / insulator / normal metal / insulator/ferromagnetic superconductor junctions has been studied. We calculate the de Josephson current based on the Bogoliubov de Gennes equation. The Josephson current is derived as a function of exchange field in ferromagnetic superconductor, normal metal thickness and insulating barrier strength. It is found that there exists an oscillation relation between the critical Josephson current and the normal metal thickness. The oscillation amplitude decreases as the thickness of the normal metal increases or the exchange field augments.[第一段]     

Cues for intervocalic /t/ and /d/ in children and adults

One naturally spoken token of each of the words petal and pedal was computer edited to produce stimuli varying in voice onset time (VOT), silent closure duration, and initial /e/ vowel duration. These stimuli were then played, in the sentence frame "Push the button for the----," to four adult and four 6-year-old listeners who responded by pressing a button associated with a flower (petal) or a bicycle (pedal). Among the findings of interest were the following: (a) VOT was statistically the strongest cue for both listener groups, followed by closure duration and initial vowel duration; (b) VOT was relatively stronger for children than for adults, whereas closure and initial vowel durations were relatively stronger for adults than for children; (c) except for a probable ceiling/floor effect, there were no statistically significant interactions among the three acoustic cues, although there were interactions between those cues and both listener group (adults versus children) and the token for which the stimulus had been derived (petal versus pedal).     

Josephson Effect in FS/I/N/I/FS Tunnel Junctions

The Bogoliubov de Gennes equation is applied to the study of coherence effects in the ferromagnetic superconductor/insulator/normal metal/insulator/ferromagnetic/superconductor （FS/I/N/I/FS） junction. We calculated the Josephson current in FS/I/N/I/FS as a function of exchange field in ferromagnetic superconductor, temperature, and normal metal thickness. It is found that the Josephson critical current in FS/I/N/I/FS exhibits oscillations as a function of the length of normal metal. The exchange field always suppresses the Josephson critical current Ip for a parallel configuration of the magnetic moments of two ferromagnetic superconductor （FS） electrodes. In the antiparallel configuration, the Josephson critical current IAv at the minimum values of oscillation increases with the exchange field for strong barrier strength and at low temperatures.     

Step voltage in metal/polyimide/organic molecule/polyimide/metal junction

A step structure, very similar to a Coulomb staircase, has been successfully observed in the current–voltage (I–V) characteristic of metal/polyimide (PI)/rhodamine-dendorimer (Rh-G2)/PI/metal junctions prepared by the Langmuir–Blodgett technique. Assuming Rh-G2 molecule functions like a metallic sphere and PI works as tunneling barriers, the I–V characteristic of the junctions was analyzed based on Coulomb blockade theory. Taking into account the presence of space charge at the PI-metal interface, which has been revealed by the surface potential measurement, the equation of threshold voltage of the step structure is derived. It was found that the derived equation is satisfactory to explain the I–V characteristic.     

Josephson Effect in FS/I/N/I/FS Tunnel Junctions

The Bogoliubov de Gennes equation is applied to the study ofcoherence effects in the ferromagnetic superconductor/insulator/normalmetal/insulator/ferromagnetic/superconductor (FS/I/N/I/FS) junction. We calculated the Josephson current in FS/I/N/I/FS as a function of exchange field in ferromagnetic superconductor, temperature, and normal metal thickness. It is found that the Josephson critical current in FS/I/N/I/FS exhibits oscillations as a function of the length of normal metal. The exchange field always suppresses the Josephson critical current I_p for a parallel configuration of the magnetic moments of two ferromagnetic superconductor (FS) electrodes. In the antiparallel configuration, the Josephson critical current I_Ap at the minimum values of oscillation increases with the exchange field for strong barrier strength and at low temperatures.     

Magnetic ordering in EuxSr1−xSySe1−y

Specific heat and ac-susceptibility measurements are reported for Eu_xSr_1?xS_ySe_1?y samples. The critical concentrat ion for long-range magnetic ordering x_c increases with decreasing y, for y = 0.1, x_c = 1.0 holds. For samples with x < x_c a broad peak in the specific heat and a peak in the susceptibility at lower temperatures indicates a spin glass type of magnetic ordering.     

Ga1-xInxNyAs1-y/GaAs量子阱中电子-LO声子的散射率

在有效质量近似下利用打靶法求出Ga_1-xIn_xN_yAs_1-y/GaAs量子阱中的本征能级E_n, 并通过费米黄金规则计算电子-LO声子由第一激发态到基态的散射率和平均散射率随温度、阱宽以及氮(N)和铟(In)组分变化的规律. 计算结果表明: 在In 组分恒定的情况下, 随着N组分的增加, 散射率和平均散射率增加; 在N组分恒定的情况下, 随着In组分的增加, 散射率和平均散射率减小; 随着温度的增加, 在温度较低时散射率和平均散射率随温度的增加变化不大, 在温度较高时随温度的增加而增加; 随着阱宽的增加, 散射率和平均散射率都是先增加到一个最大值, 然后再减小, 最大值出现在阱宽200 Å附近. 计算结果对Ga_1-xIn_xN_yAs_1-y/GaAs量子阱在光电子器件应用方面有一定的指导意义. 关键词： 费米黄金规则 1-xIn_xN_yAs_1-y/GaAs量子阱')" href="#">Ga_1-xIn_xN_yAs_1-y/GaAs量子阱 LO声子 散射率     

Pressure effects in AlAs/Inx Ga1-xAs/GaAs resonant tunnelling diodes for application in micromachined sensors

This paper reports the current-voltage characteristics of [001]-oriented AlAs/InxGa1-xAs/GaAs resonant tunnelling diodes （RTDs） as a function of uniaxial external stress applied parallel to the [110] and the [1^-10] orientations, and the output characteristics of the GaAs pressure sensor based on the pressure effect on the RTDs. Under [110] stress, the resonance peak voltages of the RTDs shift to more positive voltages. For [1^-10] stress, the peaks shift toward more negative voltages. The resonance peak voltage is linearly dependent on the [110] and [1^-0] stresses and the linear sensitivities are up to 0.69 mV/MPa, -0.69 mV/MPa respectively. For the pressure sensor, the linear sensitivity is up to 0.37 mV/kPa.     

High-p jets in diffractive electroproduction

The diffractive production of high-p jets in deep-inelastic scattering is studied in the semiclassical approach. The p-spectra of and diffractive final states are found to be qualitatively different. For fina states, which are produced by ‘hard’ colour-singlet exchange, the p-spectrum is much softer than for final states, where the colour neutralization is ‘soft’. Furthermore, the two different final states can be clearly distinguished by their diffractive mass distributions.