ANNIHILATION OF VERTICAL-BLOCH-LINE CHAINS IN THE WALLS OF THE SECOND KIND OF DUMBBELL DOMAINS SUBJECTED TO JOINT STATIC BIAS FIELD AND IN-PLANE FIELD

Experiments were statistically carried out on the behavior of vertical-Bloch-line(VBL) chains in the walls of the second kind of dumbbell domains (IIDs) is garnet bubble films subjected to joint action of static bias field H_b and in-plane field H_ip. The curves of the four critical in-plane fields, (H_ip)_IID-ID (H_ip)_IID-OHB (H_ip)_IID-SB and H'_ip vs H_b were measured and explained. In particular, in terms of two series of IID photos, a new experimental manifestation of the unknown "number effect" of VBL chains was found.     

STABILITY OF SECOND KIND OF DUMBBELL DOMAINS SUBJECTED TO AN IN-PLANE FIELD AT DIFFERENT BIAS FIELDS

The softening process of the second kind of dumbbell domalns(liDs) in garnet bubble films subjected to an in-plane field H_ip at different static bias field H_b was studied experimentally. It was found that when H_b is larger, the remaining percentage of IID, R_IID, drops sharply at a certain H_ip, and with the increase of H_b the drop occurs at lower H_ip and becomes more intensive. We have confirmed that this is related to the "spontaneous-shrink" 0f IIDs, which plays an important role for the breakdown oF vertical Bloeh line chains of lids subjected to joint fields H_ip and H_b .     

ANNIHILATION OF VERTICAL-BLOCH-LINE CHAINS IN THE WALLS OF ORDINARY HARD BUBBLES SUBJECTED TO JOINT STATIC BIAS FIELD AND IN-PLANE FIELD

For the ordinary hard bubbles(OHBs) of garnet bubble films, the annihilation of the vertical-Bloch line (VBL) chains in their walls subjected to joint static bias field H_b and in plane field H_ip was experimentally studied. The curves of two critical in-plane fields, H⁽¹⁾_ip and H′_ip, vs H_b were measured. By means of the so-called "head-cut" and "tail-cut" experiments designed in this work, it was verified that for the OHBs subjected to H_ip, their VBL chains with different lengths lose VBLs and become shorter simultaneously. It was also verified that the critical in-plane fields H⁽¹⁾_ipand H′_ip correspond to the break down of the shortest and longest VBL chains of OHBs, respectively.     

直流偏场和面内场联合作用下第二类哑铃畴的自发收缩

实验研究了第二类哑铃畴在直流偏场和面内场联合作用下的自发收缩现象，发现第二类哑铃畴的自发收缩不仅与面内场的大小有关，而且还与第二类哑铃畴在面内场中所处方向有关.采用照相法形象地揭示出：当第二类哑铃畴与面内场垂直时最容易发生自发收缩；当第二类哑铃畴与面内场平行时最难发生自发收缩.实验还证明了第二类哑铃畴在自发收缩过程中存在垂直布洛赫线的丢失现象.     

RADIAL CONTRACTION OF THE FIRST KIND OF DUMBBELL DOMAINS SUBJECTED TO A STATIC BIAS FIELD

On the basis of the "exercise" experiment and the phenomenon of "self-shrink", the behavior of "less-stable" IDs (first kind of dumbbell domains) in radial contraction under an "exercise" bias field, (H_b)_e, was statistically investigated in detail. It was found that the histograms of their stripe-to-bubble transition field, H_sb after exercise, become narrower and shift towards the side of lower H_sb with the increase of (H_b)_e. It illustrates how the less-stable IDs lose part of their vertical Bloch lines under different (H_b)_e. In addition, it was also found that the curve of the upper boundary of these histograms, (H_sb)_max vs. (H_b)_e, consists of two segments of straight lines. This discontinuity was proved to be due to self shrink, and the crosspoint of these two lines is just the lower limit of the self-shrink region. Furthermore, a series of photographs were taken to show the effect of radial contraction on less-stable IDs intuitively.     

INFLUENCE OF IN-PLANE FIELD ON THE STABILITY OF VERTICAL BLOCH LINE CHAINS IN HARD DOMAINS OF GARNET BUBBLE FILMS

The stability of vertical Bloch line (VBL) chains was statistically studied for all three types of bard domains in garnet bubble films subjected to an in-plane field H_ip. With a set of integrate data taken from seven bubble samples and with two typical figures of a sample, four main features of the behavior of VBL chains subjected to H_ip were summarized.     

面内磁场中垂直布洛赫线的消失

当面内磁场大于某一阈值H_in′时,硬磁泡和硬畴段将变为正常泡和段。我们测量了不同磁泡材料的H_in′。随垂直于膜面直流偏磁场的增大,H_in′减小。观察到这种转变是一种弛豫过程,在适当条件下可以持续数秒或数十秒。采用Slonczewski和Malozemoff提出的面内场布洛赫点形核的概念对得到的实验结果做了定性的解释。 关键词：     

立方磁晶各向异性对面内磁场中条畴和磁泡稳定性的影响

在八个(111)面磁泡膜上,观察了施加面内(in-plane)磁场后在不同晶轴方向上条状畴的消失过程,测量了条畴消失场H_s^*和磁畴消失场H_k^*与面内磁场的方向的关系。本文计及立方磁晶各向异性,完善了面内磁场中条畴的稳定性理论。用该理论定性地解释了实验结果的主要特点。导出了H_s^*与立方各向异性及面内场方向的两种近似的理论关系,它们分别适用于面内场方向靠近和不十分靠近〈110〉晶轴的情形。它们和实验结果是大致符合的。在〈110〉晶轴上,理论关系具有下列简单的形式:H_k^*<110>=H_s^*<110>=H_k{1+(k₁/2K_u)-[al/h(4πM_s/H_k)²]^2/3},此式与实验结果符合得相当好。 关键词：     

面内场和静态偏磁场作用下条畴和泡畴的稳定性

实验研究面内场H_in和静态偏磁场H_b作用下,(111)面磁泡膜内条畴的消失过程。保持H_b恒定,增加H_in,测量条畴消失场H_s^*和泡畴消失场H_k^*与面内场方向β的变化关系。计及立方磁晶各向异性的影响,建立H_in和H_b共同存在时的条畴稳定性理论。定性解释了实验的主要特点。导出黑、白条畴同时消失时的角度 β_n=1/3(2nπ±arc cos│3/(2^1/2)(M_sH_b)/K₁│)(n=0,±1,±2,…)与实验基本符合。 关键词：     

INFLUENCE OF IN-PLANE FIELD ON THE CRITICAL TEMPERATURE FOR THE BREAKDOWN OF VERTICAL BLOCH LINE CHAINS

The influence of in-plane field H_ip on the critical temperature T₀ for the breakdown of vertical Bloch line (VBL) chains of hard domains in garnet bubble films has been inves-tigated experimentally. It was found that T₀ can be significantly reduced by the increase of H_ip. Besides, the critical in-plane field H′_ip for the breakdown of VBL chains was measured as a function of temperature T for the same sample. As a result, the correlation between these two critical parameters, T₀ and H′_ip, was found. By introducing an effective in-plane field (H_ip)_e, the positive definiteness of the system of VBL pairs with two-dimemsional magnetization distribution was analyzed, giving rise to a theoretical expression of H′_ip(T): H′_ip(T) =|4πM_sQ(a₀+a₁Q +a₂Q²+a₃Q³+ a₄Q⁴)|^T_(T0(Hip=0)), where a_i are constants. It agrees well with the experiments.     

TUNNEL MAGNETORESISTANCE IN THE FERROMAGNETIC TUNNEL JUNCTION WITH FERROMAGNETIC LAYERS OF FINITE THICKNESS SUBJECTED TO AN ELECTRIC FIELD

Based on the two-band model, we investigate the tunnel magnetoresistance(TMR) in ferromagnet/insulator (semiconductor)/ferromagnet(FM/I(S)/FM) tunnel junction covered on both sides by nonmagnetic metal layers subjected to an electric field. Our results show that TMR oscillates with the thickness of ferromagnetic layers owing to the quantum-size effect and can reach very large value under suitable conditions, which may in general not be reached in FM/I(S)/FM with infinitely thick ferromagnetic layer. Although the electric field causes the change of the oscillation period, phase and amplitude of the TMR, a large TMR is still obtained in some situations with the electric field. Furthermore, the electric field does not change the feature that TMR varies monotonously with the change of magnetization angle of the middle ferromagnetic layer.     

天线理论中的第二类积分方程

本文提出一个决定柱状天线电流分布的新的积分方程,这是一个一维的Fredholm第二类积分方程。它不同于天线理论中惯用的Hallen积分方程。本文着重分析了在天线为无穷长时,由两个方程所解得的电流和磁场,说明第二类积分方程比Hallen方程更适于描述天线的实际情况。还初步进行了有限长度天线的数值计算,结果表明用第二类积分方程进行天线的数值计算是可行的。     

轴向磁场中辐射对电弧的螺旋不稳定性的影响

采用抛物型电导率、抛物型透明辐射和与时间有关的线性微扰理论，给出了中、小电流弧的热势分布（温度分布）、稳定性条件以及不稳定性增长率等定量结果．得出辐射对中、小电流弧的螺旋不稳定性的影响是降低稳定性 关键词：     

DYNAMIC STABILITY OF SKEW PLATES SUBJECTED TO AERODYNAMIC AND RANDOM IN-PLANE FORCES

This paper presents an investigation into the dynamic stability of skew plates acted upon simultaneously by an aerodynamic force in the chordwise direction and a random in-plane force in the spanwise direction. Due to this random in-plane force, the plate may become unstable before the aerodynamic force reaches its critical value. In this work, the finite element formulation is applied to obtain the discretized system equations. The system equations are then partially uncoupled and reduced in size by the modal truncation method. Finally, the unsmoothed and the smoothed versions of the stochastic averaging are used to calculate the system response, and the second-moment stability criterion is utilized to determine the stability boundary of the system. Numerical results show that the stability boundary obtained by the smoothed stochastic averaging is less conservative than that obtained by the unsmoothed version, and the former is the tangent of the latter at zero spectral density of the random in-plane force.     

垂直布洛赫线在畴段畴壁中的形成和消失

在不同的直流偏场下,对脉冲偏场作用后的磁泡膜中的磁畴观测结果表明:磁泡膨胀时的分枝生长往往伴随有大量垂直布洛赫线(以下称VBL)产生;它的正负与反向畴膨胀时所施加的直流偏场大小有确定关系;在幅度不太高的系列脉冲作用下畴端运动可使畴壁中形成大量VBL;足够强的脉冲偏场可使VBL消失。 关键词：     

冲击加载下材料破坏准则的规范场理论

 本文给出了规范场理论中的Bessel-Hagen散度不变性的广义E. Noether对称定理。应用此定理及缺陷的规范场理论，研究了材料在强动外载作用下的动力学性质，给出了破坏准则的一般公式，此公式定量地反映了缺陷和外载对材料破坏的影响。作为一个例子，研究了强冲击波作用下材料的破坏情况，使一般公式具体化了，而且定量地反映了冲击波的速度、压力和缺陷对材料破坏的影响。     

磁畴壁在复合外场中的运动方程及其在磁弹性内耗的应用

在以速率α匀速增加的磁化场中,测量铁磁性材料的内耗时,材料中畴壁所受的力除了外加磁化场所提供的主驱动力A₀⁰+A₁⁰αt,以及测量内耗所用交变应力所提供的微扰交变驱动力A₃⁰sinωt之外,经分析表明,还存在一项在数值上与主驱动力及交变驱动力的乘积成正比的交互作用驱动力,可写为A₂⁰sinωt。这里的A₀关键词：     

求解非均匀介质中电场反问题的一个新方法

以由R³中多层介质电场的部分数据出发,确定R³中某一区域的形状为例,抽象为最优控制问题,证明了该问题的解的存在性。给出了有限元方法和图论相结合的新算法,根据这个算法,进行多种数值实验,得到了L²下各种计算结果。     

温度对垂直布洛赫线链解体临界面内磁场区间的影响

实验研究了温度对液相外延石榴石磁泡薄膜中条状普通硬磁畴壁内的垂直布洛赫线（ＶＢＬ）链解体临界面内磁场区间的影响。发现存在一对特征温度T⁽¹⁾₀ 和 T⁽²⁾₀（前者比后者略低但均高于室温），在从室温到T⁽²⁾₀的每个温度Ｔ下，使ＶＢＬ逐渐消失的面内磁场Ｈ_ip都分布于一个与Ｔ有关的区间[H_ip⁽¹⁾(T), H_ip⁽²⁾(T)]内，称为临界面内磁场区间：H_ip^{＜H_ip(1)(T)时，ＶＢＬ链保持不变;H_ip(1)(T)< H_ip < H_ip(2)(T)时，随着Ｈ_ip的增加，越来越多的ＶＢＬ消失;H_ip > H_ip(2)(T)时，所有ＶＢＬ都消失。H_ip(1)(T),H_ip(2)(T)及H_ip(2)(T)-H_ip(1)(T)均随Ｔ的升高而下降，前二者分别于T(1)₀ 和 T(2)₀降为零。比值H_ip(2)(T)/H_ip(1)(T)随Ｔ的升高而升高，在低温段（包括室温）升高缓慢且约为21/2,在T(1)₀附近急剧升高且至T(1)₀时趋于∞。对以上结果做了理论分析。 关键词：}     

磁场下量子点的电子态

原子和核结构的少体理论方法改进后用以研究磁场下包含三个电子的二维量子点的电子性质。我们首先解析地证明了对应于三电子系统基态的幻数角动量的存在起源于量子力学对称性的要求。基于少体理论方法的计算确认了上述理论分析的正确性,计算同时显示出磁场强度和约束势对三电子系统基态的影响。 关键词：