两步式放电改善反向开关晶体管开通特性研究

针对大功率半导体开关反向开关晶体管(RSD)由于预充不足造成的非均匀开通缺陷, 在直接预充放电工作电路的基础上, 设计了一种两步式放电工作电路. 根据RSD结构特点理论分析了正常开通所需条件, 并对器件元胞结构进行建模分析, 模型仿真结果表明RSD在窄脉宽预充电流作用下具有更佳的开通性能, 降低了预充阶段基区载流子复合. 两步式放电实验发现第一步放电电流幅值、脉宽对于两步式放电电路的正常工作起决定作用, 而反向预充电流主要作用于RSD第一步放电的正常开通, 降低了预充电路设计难度. 仿真及实验结果均表明两步式放电电路较直接式预充放电电路提高了RSD的均匀开通性能, 这是由于两步式放电显著提高了基区等离子体积累.     

The dynamics of direction-dependent switching in nonlinear chirped gratings

Nonlinear chirped gratings are numerically demonstrated to have a direction-dependent switching behavior. For the two incident directions, bistability exists with different switching-on powers, and the instable high transmissivity states have different critical powers. The direction-dependent bistability is due to the difference of the energy contained in the gratings for the two incident directions; the direction-dependent critical powers for instability origin from the different modulation instability threshold. Furthermore, it is first reported that for instable output there are spectral side lobes whose frequency shifts relative to carrier frequency have jumps at some input powers.     

Coherent control of optical transient processes in a gas

The possibility of controlling the processes of the free-polarization decay and photon echo in a gas by means of resonant CW radiation has been shown. The photon echo and free-polarization decay are formed using the method of the Stark switching of levels in a low-intensity radiation field in the presence of an orthogonally polarized strong field. The experiments in the gas at the R(4, 3) transition in the vibrational band 0 ? 1 v₃ ¹³CH₃F in the presence of radiation from a CW CO₂ laser and the calculations by the evolution operator method show a strong effect of the high-intensity radiation field on the photon echo and free-polarization decay to its complete suppression.     

Resistive switching behaviour of highly epitaxial CeO2 thin film for memory application

We report on the remarkable potential of highly epitaxial and pure (001)‐oriented CeO₂ thin films grown on conducting Nb‐doped SrTiO₃ (NSTO) substrates by laser molecular beam epitaxy for nonvolatile memory application. Resistive switching (RS) devices with the structure of Au/epi‐CeO₂/NSTO exhibit reversible and steady bipolar RS behaviour with large high/low resistance ratio and a narrow dispersion of the resistance values. Detailed analysis of the conduction mechanisms reveals that the trapping/detrapping processes and oxygen vacancies migration play important roles in the switching behaviour. In the light of XPS measurement results, the CeO₂/NSTO interface with oxygen vacancies or defects is responsible for the RS effect. Furthermore, a model is proposed to explain this resistance switching behaviour. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Simulation of resistance switching of memory cells based on solid electrolyte

The electrochemical reaction induced resistance switching of memory cells based on solid electrolyte is simulated by an interface-tracking method using a two-dimensional model. For the switching-on process, the simulating results show that metal dendrites will be formed in the solid electrolyte, switching the device to a low-resistance state. For the switching-off process, the dendrite will be dissolved and the conductive channel eventually breaks down, switching the device to a high-resistance state.     

Individual bit island reversal and switching field distribution in perpendicular magnetic bit patterned media

The switching of single bit magnetic islands in bit patterned media (BPM) for two cases with 10 times difference in coercivity, as well as the switching field distribution (SFD) of the islands, has been studied using magnetic force microscopy (MFM) measurements. The intrinsic SFD is measured to be ∼9-11% of the remanence coercivity (H_cr), which contributes only ∼20-50% of the total SFD broadening (∼23-41% of H_cr). High resolution MFM observations clearly showed the influence of surrounding islands on the switching behaviour and switching fields of individual bit islands, resulting in significant contributions in SFD broadening due to non-intrinsic dipolar interactions. It was further observed that single magnetic islands could be switched within a very narrow switching field range as small as 4 Oe, which indicates very sharp and uniform switching for each individual island of BPM.     

Rare earth-transition metal compound-based MOSLM for the visible spectral range

We have demonstrated a magneto-optical spatial light modulator in which functionality is realized by (i) heating up to Curie temperature (T_c) magneto-optical elements (pixels) with a semiconductor laser and (ii) application of a switching magnetic field. The pixels were made of films of amorphous rare earth-transition metal compounds (TbFe films with T_c=403 K and DyFe films with T_c=343 K) having good magneto-optical responses for wavelengths from the visible spectral range. We have found that the magnetization direction of pixels can be modulated with a laser radiation density of 5 mJ/cm² and in a switching magnetic field of 15 Oe.     

Effects of array arrangements in nano-patterned thin film media

In this work, the effect of different arrays arrangements on the magnetic behaviour of patterned thin film media is simulated. The modeled films consist of 80×80 cobalt grains of uniform diameter (20 nm) distributed into two different array arrangement: hexagonal (triangular) or square arrays. In addition to that, for each array arrangement, two cases of anisotropy orientations, random and textured films are considered. For both array arrangements and media orientations, hysteresis loops at different array separation (d) were simulated. Predictions show that for closely packed films, the shearing effects on the magnetization loop are much larger for the square array arrangement than the hexagonal one. According to these predictions, the bit switching field distribution in interacting 2D systems is much narrower for the hexagonal array arrangement. This result could be very important for high-density magnetic recording where a narrow bit switching field distribution is required.     

The effects of hydrostatic pressure and intense laser field on the linear and nonlinear optical properties of a square quantum well

In this paper, the effects of hydrostatic pressure, temperature and intense laser field on the linear and nonlinear optical processes in the conduction band of a square quantum well are numerically investigated in the effective mass approximation. The analytical expressions of optical properties are obtained by using the compact density-matrix approach. The numerical results are presented for typical square GaAs/Al_xGa_1?xAs single quantum well system. The nonlinear optical absorption and refractive index changes depending on the hydrostatic pressure and intense laser field are investigated for two different temperature values. The results show that the intense laser field, the hydrostatic pressure and the temperature have a significant effect on the optical characteristics of these structures.     

Optical switching based on the manipulation of microparticles in a colloidal liquid using strong scattering force

This paper demonstrates the realization of an optical switch by optically manipulating a large number of polystyrene spheres contained in a capillary.The strong scattering force exerted on polystyrene spheres with a large diameter of 4.3 μm is employed to realize the switching operation.A transparent window is opened for the signal light when the polystyrene spheres originally located at the beam centre are driven out of the beam region by the strong scattering force induced by the control light.The switching dynamics under different incident powers is investigated and compared with that observed in the optical switch based on the formation of optical matter.It is found that a large extinction ratio of ～ 30 dB and fast switching-on and switching-off times can be achieved in this type of switch.     

Photothermal and electrooptic nonlinearities in ZnSe and ZnTe and their application in bistable devices

In this paper we present results on ZnSe and ZnTe optically bistable elements in connection with electrooptic effects. The behaviour of optical hysteresis under an applied electric field is studied and the electrical characteristics under illumination with monochromatic laser radiation are investigated. Influences of optical bistability on the photocurrent are measured and an attempt is made to explain the unusual behaviour of the current with respect to the absorbed amount of light, namely a switching down in photocurrent when the absorptive switching takes place. Towards this aim we report here for the first time on spatially resolved measurements of photoconductivity in ZnSe to investigate the influence of Schottky contacts on photothermal electrooptic bistability. Furthermore, we report also to our knowledge for the first time on the influence of the 3D-Stank effect on optical bistability.     

Study of anti-clockwise bipolar resistive switching in Ag/NiO/ITO heterojunction assembly

The anti-clockwise bipolar resistive switching in Ag/NiO/ITO (Indium–Tin–Oxide) heterojunctional thin film assembly is investigated. A sequential voltage sweep in 0 → V _max → 0 → ?V _min → 0 order shows intrinsic hysteresis behaviour and resistive switching in current density (J)–voltage (V) measurements at room temperature. Switching is induced by possible rupture and recovery of the conducting filaments in NiO layer mediated by oxygen ion migration and interfacial effects at NiO/ITO junction. In the high-resistance OFF-state space charge limited current passes through the filamentary path created by oxygen ion vacancies. In OFF-state, the resistive switching behaviour is attributed to trapping and detrapping processes in shallow trap states mostly consisting of oxygen vacancies. The slope of Log I vs Log V plots, in shallow trap region of space charge limited conduction is ~2 (I ∝ V ²) followed by trap-filled and trap-free conduction. In the low-resistance ON-state, the observed electrical features are governed by the ohmic conduction.     

Multimode-Eigenschaften verschiedener Halbleiterlasermodelle. II

The influence of electron intraband scattering processes on the semiconductor laser behaviour is investigated. These processes thermalize the electrons in each band in a very short time. For the example of optical band to band transitions withk-selection rule it is shown, that no holeburning is possible, if the scattering relaxation time is much shorter than the radiative lifetime. We show for this limit that in a linear approximation only one running laser mode is stable. In order to include both band and localisation effects the model of optical transitions between an impurity level and a band is treated. Diffusion processes between the impurities and scattering processes in the band are taken into account. The treatment shows that usually the local inhomogenity of the inversion produced by standing modes is more important than the energetic one for the stabilisation of different laser modes. The model of full energetic homogenisation in the presence of diffusion processes was introduced byStatz andTang. We discuss in a qualitative manner which deviations should be expected if this limit is not fully realized.     

Homogeneous interface-type resistance switching in Au/La_0.67Ca_0.33MnO₃/SrTiO₃/F:SnO₂ heterojunction memories

La0.67Ca0.33MnO3 thin films are fabricated on fluorine-doped tin oxide conducting glass substrates by a pulsed laser deposition technique with SrTiO3 used as a buffer layer. The current-voltage characteristics of the heterojunctions exhibit an asymmetric and resistance switching behaviour. A homogeneous interface-type conduction mechanism is also reported using impedance spectroscopy. The spatial homogeneity of the charge carrier distribution leads to field- induced potential-barrier change at the Au-La0.67Ca0.33MnO3 interface and a concomitant resistance switching effect. The ratio of the high resistance state to the low resistance state is found to be as high as 1.3 × 10 4 % by simulating the AC electric field. This colossal resistance switching effect will greatly improve the signal-to-noise ratio in nonvolatile memory applications.     

Fast intra-modal and inter-modal wavelength switching of a high-speed SG-DBR laser for dynamic wavelength routing

As the SG-DBR laser is among the most attractive sources for WDM and DWDM systems, it is important and necessary to investigate its wavelength switching characteristics. This behaviour will affect wavelength routing and the capability limits for channel re-allocation in future optical networks. This paper presents detailed experimental studies on a high-speed SG-DBR laser by using a Fabry–Perot Interferometer technique adapted for the non-continuous wave case. Measurements of fast intra-modal (i.e. cavity mode) and inter-modal (i.e. super-mode) wavelength switching and insights into the device's dynamic behaviour are obtained. Implications are given for transmitter design in dynamic wavelength routing and channel re-allocation.     

Dynamics of an Optically Switched Bistable Semiconductor Laser

The switching time of an optically switched laser diode between a locked mode and free oscillation mode is studied. By starting with linear stability analysis, analytical expressions are developed to predict the switching time. It is shown that the switching of optical output between the locked and unlocked modes is governed by two relaxation processes with different time constants, and the change in the first relaxation process, dependent on the carrier density in the initial state, gives a strong effect on the total switching time, in contrast to the dynamic behavior of the carrier density dominated by a single relaxation process. Our analytical results show that larger detuning and power of optical input are effective in shortening the switching time and are believed useful to estimate the switching time of an optically switched bistable laser diode.     

Investigation on the bistability of linearly chirped nonlinear Bragg gratings

Based on the nonlinear coupled mode theory, by using the reversely recursive transmission matrix method, the switching characteristics of linearly chirped nonlinear Bragg gratings (LC-NLBG) have been investigated numerically. The results show that, introducing spatial chirp in fiber gratings is helpful to widen the bistable wavelength range, and the influence of the chirp on the switching-on threshold and the on-off ratio of the bistable switching are obvious, the chirp-dependent bistability is due to the difference of the axial distribution of forward wave intensity in the gratings.     

A classification scheme for the light-current (L/I) characteristics of a two photon mode semiconductor laser

The behaviour of a semiconductor laser in which two photon modes exist above threshold is analysed using the rate equations. This paper classifies the different qualitative behaviour of mode competition by using a single parameterγ. The simplified analysis, neglecting electronic diffusion is sufficient to explain the experimentalL/I characteristics of weak and strong polarization in semiconductor lasers which were previously treated theoretically using a power distribution model.     

Detection of subfemtosecond transients by means of nonlinear Raman scattering

Ultrafast transient processes are shown to qualitatively modify the nonlinear-optical response of a Raman-active medium. Fast processes with phase relaxation times shorter than the laser field cycle T ₀ = 2π/ω, where ω is the carrier frequency of the laser field, can be detected via modulation of the dipole moment at the frequency 2ω. This modulation is observed in the nonlinear-optical response of the medium against a background of a conventional, Raman part of the signal. Nonlinear Raman scattering can thus help to record ultrafast transients with a subcycle time resolution.     

Phase switching and quantum interference in a 3-level Λ-shape bistable model

The steady state bistable behaviour of a three-level Λ-shape is examined in the presence of a control field $({\rm \Omega} +\chi \left( t\right) e^{i\varphi})$({\rm \Omega} +\chi \left( t\right) e^{i\varphi}) : Ω is the strong Rabi component, $\chi \left( t\right) $\chi \left( t\right) is the stochastic part with relative phase ϕ; with quantum interference between decay channels taken into account. One- and two-way phase switching effect for the transmitted field against the phase are predicted at fixed values for the incident input field. Also cooperative switching effect shows multistable/bistable behaviour. Quantum interference tends to diminish the dispersive effects responsible for multistable behaviour (in the input-output relation and the cooperative switching diagram) and asymmetry (in the phase switching diagram). Equivalence of the role of the stochastic part of the control field with that of the “classically” squeezed field is shown to occur only in the absence of quantum interference.